MICRO

FOO

T CS

P PA

CKAG

ES

THERMALLY ENHANCED POWERPAK ® FAMILY COM

PACT DUAL DEVICES REDUCE COMPONENT COUNT

P-CHANNEL MOSFETS-12 V TO -40 V TrenchFET® GEN III AND IV

MS7530-1712www.vishay.com

IN A NUTSHELL

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

Enable LONGER battery life

Up to 31 A continuous drain current rating in 2 mm x 2 mm package

Industry’s lowest RDS(ON) in an array of advanced packages• Minimize power loss and voltage drop

Minimizes Footprint RequirementPackage size down to 0.8 mm x 0.6 mm

Breakdown voltages: -12 V to -40 V

Battery application driven features• Guaranteed 1.5 V rated RDS(ON) • ESD protection up to 8 kV (HBM)

MICRO FOOT®

0.8 mm x 0.8 mm

PowerPAK® SC-702.05 mm x 2.05 mm x 0.75 mm

SiSA01DN-30 V, 4.9 mΩ

PowerPAK® 1212-810.89 mm²

PowerPAK® 08060.8 mm x 0.6 mm

SO-8 equivalent-30 V, 5 mΩ

SO-831 mm²

INCREASE efficiency of power delivery

PREVENT undesired fault signals

APPLICATIONS

65 % Smaller footprint

BATTERYPOWERED

EQUIPMENT

NOTEBOOKS / TABLETS

GAME CONSOLES WEARABLES

CONSUMER ELECTRONICS

COMPACT and space saving PCB layout OPTIMIZATION

Part # Si8851EDB SiSA01DN Si7155DP

VDS -20 V -30 V -40 V

RDS(ON) < 8 mΩ < 4.9 mΩ < 3.6 mΩ

Footprint (mm) 2.4 x 2 3.3 x 3.3 6 x 5

Part # SiA467EDJ SiA437DJ

VDS -12 V -20 V

RDS(ON) < 13 mΩ < 14.5 mΩ

Continuous ID 31 29.7

COMPACT DUAL DEVICES REDUCE COMPONENT COUNT

Typical load switching application

APPLICATIONS

Full Range Of Leaded and Surface-Mount Packages, Including:

TO-247 D2PAK / DPAKPowerPAK® 8x8 /

8x8LPowerPAK® SO8

to 0806SOT, TSOP, SC

FamiliesMICRO FOOT®

Power MOSFETsTrenchFET® AND E SERIES

IN A NUTSHELL

LOW CONDITION

LOS

S

LOW

SWITCHING LOSS

ROBUST PRODUCTS

VMN-MS7318-1712

mosfets@vishay.com

www.vishay.com © 2018 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

MARKETS AND APPLICATIONS

Broad range of power MOSFETS in a wide selection of advanced packages• N- and p-channel families

• Breakdown voltages: -200 V to 800 V

• Wide range of gate drive voltages starting at 1.2 V

• Commercial, automotive, and medical product grades

Breakdown Voltage and Package Selection PowerPAK® 0806

MICRO FOOT®SC-75 / SC-89

PowerPAK SC-75SC-70

PowerPAK SC-70SOT-23TSOP-6

PowerPAK ChipFET®PowerPAK 1212

TSSOP-8SOIC-8

PowerPAK SO-8LPowerPAK SO-8

PowerPAK 8x8DPAK / IPAK

TO-220 / TO-263TO-247

-200 -100

TrenchFET® E Series

0 100 200 300 400 500 600 700 800

P-Channel N-Channel

Application-Specific Technology Platforms• Optimized with lowest Rds(on) for load switch

applications

• Optimized for lowest gate charge and capaci-tances for fast switching

Inductor LoadCircuit

VIN

V-

PowerSource

LoadCircuit

Inductor LoadCircuit

VIN

V-

PowerSource

LoadCircuit

INTEGRATED MOSFET POWER STAGE COM

PACT

H

IGHE

ST O

UTPU

T CU

RREN

T

POWERPAIR® MOSFETSINTEGRATED DUAL-MOSFET POWER STAGE

MS7531-1805www.vishay.com

IN A NUTSHELL

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

TABL

ET

SMAR

T

PHON

E

Supports Single or Multi-Phase Designs, Reduces PCB Footprint Area for MOSFET Components

PowerPAIR 6x5F for Layout Optimization Simplifies Placement of Input Capacitor

Separation of “Power” and “Signal” Partition

Input Voltage Range: 4.5 V to 24 VInternally Connected Half-Bridge

APPLICATIONS

COMPUTERS GAME CONSOLES

USER INTERFACES

DRONES

COMPACT DUAL DEVICES REDUCE COMPONENT COUNT

PowerPAIR 6x5F

WIDE RANGE of Solutions That Support Popular Output Power and Duty Cycle Requirements

Optimized Gen IV MOSFET Pair Enables High Efficiency

PowerPAIR 6x5

PowerPAIR 3x3

99.0 %

98.5 %

98.0 %

97.5 %

97.0 %

96.5 %

96.0 %

95.5 %

95.0 %1 2

Output Load (A)

E

cien

cy

13.3 VIN / 700 kHz / IHLP5050EZ 2.2 µH / Open Loop Thermal BalanceE ciency vs. Load

3 4 5 6 7 8 9

98.7 % Peak EciencyIn a typical battery charger application

SiZ340DT @ 5.6 VOUT

SiZ340DT @ 8.4 VOUT

SiZ322DTSiZ342DT

SiZ320DTSiZ340DT

SiZ320DTSiZ340DT

SiZ320DTSiZ340DT

SiZ980DTSiZF918DT

SiZ328DTSiZ342DT

SiZ926DTSiZ988DTSiZ998DT

SiZF914DTSiZF916DTSiZF906DT

SiZ926DTSiZ988DTSiZ998DT

0

50 %

30 %

16 %

5 10 15 20 25 30

Dut

y C

ycle

Output Current (A) per Phase

GRAPHIC CARDS

TELECOM EQUIPMENT

CONSUMER ELECTRONICS

(dimension in mm)

INCREASE POWER DENSITY

MS7339-1711© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.www.vishay.com For Technical Questions: pmostechsupport@vishay.com

Higher efficiency

Space-saving packages

APPLICATIONS

TYPICAL EFFICIENCY IMPROVEMENT EXPECTATIONBenchmarking condition 12.9 VIN, 1.8 VOUT, 800 kHz

Industry’s lowest RDS(on) n-channel MOSFETs in an array of advanced packages

• Less than 0.58 mΩ

• Breakdown voltages: 25 V to 30 V

• Excellent RDS - Qg FOM improves efficiency for switch-mode power supplies

IN A NUTSHELL

POWER MOSFETsLow Voltage TrenchFET®

Com

pact

and

Hig

h C

urre

nt H

andl

ing

Therm

ally Enhanced and Low Prof le

Dual-S

ided Cooling Feature

RDS(on)

Increased power density

Dual-sided cooling feature

91

90

89

88

872 4 6 8 10 12

Load Current (A)

Effic

ienc

y (%

)

14 16

SiSA18ADN + SiSA12ADN Competitor

2.05 mm 2.05 mm

SiA468DJ SiSS02DN

Up to 37.8 A continuous ID

< 1.2 mΩ, 10.89 mm2 footprint

TELECOM EQUIPMENT

COMPUTERS

SERVERS

CONSUMER ELECTRONICS

DRONES

3.3 mm3.3 mm

IG12828438-1911

pmostechsupport@vishay.com

www.vishay.com © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

SiR626DP 60 V 1.7 mΩ N-CHANNEL MOSFETIN PowerPAK® S0-8

Prior Gen2.264

3270

SiR626DP1.468

992

0

20

40

60

80

100

120

140

0 0.5 2.0 2.5 3.0

Typi

cal Q

g (n

C) a

t VG

S =

10 V

Typical RDS(on) (mΩ) at VGS = 10 V

OPTIMIZED FOR SYNCHRONOUS RECTIFICATION AND SWITCHING

Optimized balance of RDS(on), Qg, and Coss reduces power losses from MOSFET conduction, gate driving, and diode conduction

SiR626DP offers lower Qg and Coss than competitors at similar RDS(on).

Bubble Size Represents Coss (pF)

1.0 1.5

Drop-in Upgrade & Industry-Leading F

OM

SiR626DP

TARGET CIRCUIT APPLICATIONS

• Synchronous rectification

• Battery management

• DC/DC topologies

• Motor drive control

• Primary side

• OR-ing

• Battery protection

DESIGN RESOURCES

TARGET APPLICATION MARKETS

VIN = 48 V, VOUT = 4.3 V, frequency = 250 kHz, ¼ brick with half-bridge technology

4 % LOWER Qg

SERVERS MOTORIZED ELECTRONICS

POWERSUPPLIES

AI INFRASTRUCTURE

TELECOMALTERNATIVEENERGY

IMPROVED CRITICAL DYNAMIC PARAMETERS

SIR626DP ENABLES 0.7 % HIGHER EFFICIENCY FOR SYNCHRONOUS RECTIFICTION

OPTIMIZED FOR SYNCHRONOUS RECTIFICATION AND SWITCHING

Prior Gen2.264

3270

SiR626DP1.468

992

0

20

40

60

80

100

120

140

0 0.5 2.0 2.5 3.0

Typi

cal Q

g (n

C) a

t VG

S =

10 V

Typical RDS(on) (mΩ) at VGS = 10 V

OPTIMIZED FOR SYNCHRONOUS RECTIFICATION AND SWITCHING

Optimized balance of RDS(on), Qg, and Coss reduces power losses from MOSFET conduction, gate driving, and diode conduction

SiR626DP offers lower Qg and Coss than competitors at similar RDS(on).

Bubble Size Represents Coss (pF)

1.0 1.5

R-C ThermalModels

Models

+ 0.7 % HIGHER

Comparisons are with similar 60 V devices

16 % BETTER Qoss

1.65 mΩ Competitor

1.6 mΩ Competitor

1.3 mΩ Competitor

SiR626DP

1.65 mΩ Competitor

1.6 mΩ Competitor

1.3 mΩ Competitor

SiR626DP

IG14273664-1912www.vishay.com © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

pmostechsupport@vishay.com

SiSS22LDN TrenchFET® GEN IV POWER MOSFET VDS = 60 V in PowerPAK® 1212-8S

RDS(on) AT VGS = 4.5 V (TYPICAL)

ENABLES HIGHER EFFICIENCY • Achieves higher efficiency

• Drop-in upgrade and conventional package type

• Efficiency comparison (right) shows SiSS22LDN and competitor test results on 1/8 brick with VIN = 48 V, VOUT = 3.3 V, Fsw = 140 kHz, and using four devices for secondary side synchronous rectification

SiSS22LDN and HIGH PERFORMANCE COMPETITORS: EFFICIENCY vs. LOAD

SiSS22LDN and Other High Perfornance 60 V DevicesEfficiency vs Load

Output Load (A)

1/8 Brick / 48 VIN / 3.3 Vo / 140 KHZ / 4 pcs Primary + 4 pcs Secondary

Effi

cien

cy (%

)

96

95

94

93

923 6 9 12 15 18 21 24 27

Competitor 1 (4.3 mΩ) Competitor 2 (4.2 mΩ) SiSS22LDN

RDS(on)-Qg FOM (mΩ) AT 4.5 V

• The lowest RDS(on) in its class

• Typical RDS(on) at 4.5 V = 4.1 mΩ

• Typical RDS(on) at 10 V = 2.91 mΩ

• Reduces conduction loss and increases power density

• Excellent RDS-Qoss FOM is optimized for synchronous rectification

• RDS-Qg FOM for VGS of 4.5 V is 10 % lower than the next best product

• Very low Qoss cut unplanned power loss during diode conduction

TARGET APPLICATIONS

SERVERS MOTORIZED ELECTRONICS

POWERSUPPLIES

AI INFRASTRUCTURE

TELECOMALTERNATIVEENERGY

Competitor 1 6.2 mΩ

Competitor 2 6.2 mΩ

Competitor 3 4.7 mΩ

Competitor 4 4.4 mΩ

SiSS22LDN 4.1 mΩ0.0 1.0 2.0 3.0 4.0 5.0 6.0

Competitor 1 93

Competitor 2 87

Competitor 3 136

Competitor 4 79

SiSS22LDN 710 35 70 105 140

3.65

m

Ω, 60 V Power MOSFET

Industry-low RDS(on) and R DS(on)-Q

g F

OMSiSS22LDN

THERMALLY ENHA

NCED

AND

DUA

L-SI

DED

COOL

ING

FEATURE

HIGH CURRENT, RUGGED PACKAGE COMPACT AND LOW PROFILE

POWER MOSFETMEDIUM VOLTAGE TrenchFET®

VMN-MS7340-1711www.vishay.com

IN A NUTSHELL

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

Enable the HIGHEST efficiency

Industry’s lowest RDS-Qoss Figure-of-merit (FOM) in an advanced package array

Double-cooled PowerPAK SO-8

Breakdown voltages: 40 V to 250 V

Excellent dynamic parameters optimize switching characteristics

INCREASE power density

REDUCE component count

APPLICATIONS

RENEWABLE ENERGY

80 % footprint reduction from D2PAK

SiR680DP 2.9 mΩ max. 6 x 5 mm2

SUM60030E 3.2 mΩ max.15 x 10 mm2

95

94

93

92

91

90

89

88

873 6 9 12 15 18 21

Eci

ency

(%)

Competitor (1.6 mΩ)

Output Load (A)

SiR626DP

Typical Eciency Improvement48 Vin, 8.3 Vo, 250 kHz, 1/4 brick with half-bridge topology

TELECOM EQUIPMENT

POWER SUPPLIES

75 % lower package profile

COMPACT and HIGHLY EFFICIENT devices enable layout optimization

THIN PROFILE with 0.56 mm typical height Footprint COMPATIBLE to PowerPAK SO-8

RDS(ON) as low as 0.73 mΩ

250 V

200 V

150 V

0 10 20 30 40 50 60 70 80 90 100 110 120

0 1 2 3 4 5 6 7

100 V

80 V

60 V

40 V

New GenPrior Gen

PowerPAK® SO-8 Max. RDS(ON) (mΩ) BenchmarkingNew Generation versus Prior Generation

MOTOR DRIVE CONTROL

PowerPAK SO-8 D2PAK

@

N- and P-Channel MOSFETs

AUTOMOTIVE TrenchFET®

SQ SERIES POWER MOSFETs

MS7533-17xxwww.vishay.com

IN A NUTSHELL

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

• Wide range of N- and P-channel MOSFETs - N-ch VDS = 12 V to 300 V - P-ch VDS = -12 V to -200 V

• Available in single, dual, and dual asymmetric configurations

• Highly efficient packages with power density up to 11 W/mm2

- RDS(ON) down to 1 mΩ

• AEC Q-101 Qualified to + 175 °C

• Latest trench technologies optimized for low conduction and low switching losses

• Product testing includes extended temp screening with dynamic PAT, SYL, and SBL to reduce defects

APPLICATIONS

AUTOMOTIVE

COMPACT DUAL DEVICES REDUCE COMPONENT COUNT

SQ Package Portfolio

Compact PowerPAK® packages ~ Optimized for high board-level reliability

PowerPAK® 8x8L 8 mm x 8 mm

PowerPAK® SO-8L 5 mm x 6 mm

PowerPAK® 1212 3.3 mm x 3.3 mm

PowerPAK® SC-70 2 mm x 2mm

KGD Known Good Die 1 m x 1 mm to8 mm x 12 mm

N-C

HANNEL

P-C

HANNEL

300 V

SC-70

100 V

40 V

0 V

-100 V

-200 V

TO-220TO-263

TO-247

D-PAK

SO-8

PACKAGE SIZE

VOLT

AG

E R

AN

GE

TSOP-6SOT-23

PowerPAK®

SC-70 PowerPAK®

8x8LPowerPAK®

SO-8L PowerPAK®

1212

CAR BATTERIES

INFOTAINMENTLIGHTING

BRAKING ELECTRICVEHICLES

POWER TRAIN

AEC-Q101 Qualif ed

MOSFETs FOR INDUSTRIAL APPLICATIONS

IG12319679-1907

pmostechsupport@vishay.comwww.vishay.com

APPLICATIONS• Telecom Equipment

• Power Tools

• Power Supplies

• Motor Drive Control

• Renewable Energy

• Battery Management

Breakdown Voltages: -200 V to 250 V Selected Products Industry Low RDS(ON) and the Best RDS-Qoss FOM

30 % Lower RDS(ON) than products from prior generation Improved Qg reduces power loss from switching

LOW VOLTAGE MOSFETs IN TRANSISTOR OUTLINE (TO-) PACKAGES

© 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED.

SUM70101EL -100 V,

< 10.1 mΩ D2PAK

SUG80050E 150 V

< 5.4 mΩ TO-247

SUG90090E 200 V,

< 9.5 mΩ TO-247

SUP90142E 200 V,

Best RDS-Qoss TO-220

MORE EFFICIENT Power Delivery COOLER Temperature During Operation

PREVENTS Overheating Incre

ase Eff ciency and Power Density

EXTENSIVE ARRAY OF PACKAGE OPTIONS AND FEATURES

Selected products are optimized for 5 V gate drive operations with low RDS(ON)

TO-247 TO-220F TO-220 D2PAK D2PAK-7L DPAK

Up to 100 A Up to 56 A Up to 120 A Up to 120 A Up to 200 A Up to 50 A

High Current and 175 °C Rated Packages Low RDS(ON) in Wide Array

of Packages