Product Selector Guide - SemiconductorStore.com€¦ · · 2012-10-05between 0 and 100% by...
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Transcript of Product Selector Guide - SemiconductorStore.com€¦ · · 2012-10-05between 0 and 100% by...
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Product Selector Guide
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Table of Contents
About Us & Our Mission......................................................................................................................................3Lighting – LED Driver IC......................................................................................................................................4Lighting – LED Modules.......................................................................................................................................5Dimmer................................................................................................................................................................6Optical Sensors...................................................................................................................................................7Magnetic Sensors................................................................................................................................................8Power Management.............................................................................................................................................9Corporate Headquaters .....................................................................................................................................11Sales Office – Europe........................................................................................................................................12Sales Office – North America.............................................................................................................................13Distributors – North & South America.................................................................................................................14Distributors – Asia..............................................................................................................................................15
Version 1.02 – 16.08.2012
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About Usalpha microelectronics was founded in 1994 and since inception has offered ASIC design, test, and production services. In addition, as of 2008, we began to offer a line of standard products. The foundation of the company stems from an established history in the mixed-signal semiconductor industry. Our designers possess the specific skills, experience, and knowledge that are crucial in High Voltage, Radio Frequency, and Mixed Signal development. We are located in Frankfurt (Oder), Germany, a city with a long standing history in the semiconductor industry with the focus on research, production and trade in the Berlin-Brandenburg area.
We are a fabless semiconductor manufacture for custom specific and standard ICs. At alpha microelectronics, we offer turnkey solutions from design to production.
Our MissionOur vision is to provide high quality mixed-signal products and services to a wide scope of clients throughout the world. We strive to be innovative, ahead of change, offer both superb quality products and services at competitive prices. An integral part of our company philosophy is to cultivate a partnership with our clients, so that we can identify and meet their requirements, to bring them to the next level of success with their products. We are committed to our clients, offering exemplary service as our top priority. Our pledge to excellence is our pledge to our clients!
alpha microelectronics gmbh is proud to be ISO 9001:2008 certified and RoHS compliant.
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Lighting LED Driver IC
Part No. Supply Short Description FeaturesAMG-LL9910 450VDC -
AMG-LL992x 420VDC
ILED Universal high voltage single channel LED driver. Both buck and boost topologies are attainable. External MOSFET. Programmable PWM frequency up to 300kHz. Constant current LED drive, dimmable between 0 and 100% by applying an external control voltage or low frequency PWM.
- >90% efficiency- 10-450V- Peak current mode converter- Linear and PWM dimming capability- Buck and boost topology- Pin compatible with other HV LED drivers- Available as bundle with MOSFET
20,30,50, 100mA
Very cost effective & economical family of single channel high voltage LED drivers. Compatible to similar products from other suppliers. This IC is very highly recommended for decorative lighting applications.
- Constant output current- 8-420V- Fixed OFF-Time Buck Converter- Internal MOSFET- Small 3 lead SMD package
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LightingLED Modules
Part No. Supply Short Description FeaturesAMG-LL75x 7-30VDC
AMG-LL76x 7-50VDC 350mA
AMG-LL79x 20-280VAC
AMG-LL7Ax
ILED 200,
350mAHigh efficiency, long lifetime, constant current LED driver modules. Extremely small form factor.
- Buck topology- Constant current output 200mA or 350mA- Low current ripple version of OLED (<1% Ipp)- Maximum output power 10W- Capable of driving 1...5 white LEDs- Upto 96% efficiency- PWM control input for dimming- Standby current max.3.5mA- Connection options: Crimp, plu, solder- Surface mounting possible – MTTF >100.000h
High efficiency, long lifetime, constant current LED driver modules. Extremely small form factor.
- Buck topology- Max. Output power 10W- LED Current 350mA- PWM input for dimming and disable- Efficiency upto 94%- 1-12 white LEDs (max.~45V forward voltage)- Standby current 3.5mA- Over current protection- Reverse polarity protection- Crimp, plug, and solder connectors- 42x16.5x7mm- MTTF>100.000h
20,30,50, 100mA
High efficiency, long lifetime, constant current LED driver modules. Extremely small form factor.
- Buck topology - Efficiency > 92% - Wide supply range - Over current protection - Reverse polarity protection - 21x18x10mm - MTTF>100.000h
120, 230, 277VAC
350, 700mA
Family of non isolated High Voltage LED driver modules. No external AC/DC power supply is required.
- Buck topology- Low current ripple <10%- Short circuit/over current protection- Wide outout voltage range- Output power upto 30W- Dimmable (0-10V)- Fast wire to board connections- Small form factor (60x28mm)- Very slim module (<15mm)
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DimmerPart No. Supply Short Description FeaturesLi080 1mA
ILED 13.5 Timer & dimmer IC for timing, PWM, & dimmer applications. It's most
suitable for incandescent & halogen lamp dimmers. The LED can display if the IC detected a fault condition.
- Dimming range between 10% and 95%- Flexible soft start function (hot and cold – soft start)- Zero-crossing detection- Protection for over current, over voltage and over temperature- Status indication for protection functions- Ambient temperature range: 0°C to 70°C
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Optical SensorsPart No. Supply Short Description FeaturesSO101 7-35VDC -
SO204 4.5-6.5VDC -
Icc
Single chip optical sensor. It incorporates an IR emitting diode driver/oscillator, a photo detector receiver with differential signal evaluation for positioning detecting and a decision stage. This product also provides a linear output, data output, & switching outputs with high driving capabiliities.
- Photo receiver with phototransistor and PSD inputs- IR emitting diode driver with upto 400mA peak current- IR emitting diode pulse width and repetition frequency set by ext.C- Linear, comparator & data output- Adjustable receiver gain and hysteresis- Two independent outputs, each capable to sink 150mA- Output overload/overcurrent protection- Thermal shutdown- Operating temperature range -25 to 90°C
Fully integrated optical receiver for switch or data trasmission applications. It's an integrated light barrier receiver/transmitter front end IC to be used with external receiving and emitting diodes. The IC consists of a current-to-voltage converter, variable-gain amplifier, 10-bit ADC, logic block, two bandgap reference voltage cells, one 1.8, two 2.5V, and one 3.3V regulators.The Tx diode is driven by the digital block of the IC. The Rx diode signal, is converted into a voltage by the current to the voltage converter and then amplified, there are six possible gain settings. ADC is synchronized with the Tx diode. The signal values are processed by the logic block which allows for variable object detection thresholds, adjustable light signal timing and digital signal filtering.
- Specialized photo diode receiver front-end CMOS technology- On-chip 3.3V linear voltage regulator supporting off-chip electronics- Separate on-chip analog and digital core on-chip 2.5V linear voltage regulators- On-chip 1.8V ADC reference voltage regulator- Internal current-to-voltage converter with modifiable transresistance- Support of an external current-to-voltage converter by disabling the internal one- 6 step variable gain amplifier with matched compensation for increased dynamic range- Adjustable Tx-LED strength and timing- Adjustable digital signal filtering- Integrated 8 digital 7-segment LED driver- UART interface- Low power consumption
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Magnetic SensorPart No. Supply Short Description FeaturesSM101 5.5 – 38VDC - Single chip inductive proximity switch
Icc- Fully integrated low cost proximity detector- User adjustable sensing range- User adjustable hysteresis (0...15%)- Can function with a broad selection of inductive transducers- Voltage regulator to improve immunity against fluctuations of supply voltage- Inactive output during start-up- NPN open collector output with guanranteed sink current of 150mA- Output overload/overcurrent protection- Broad range of operating frequency: 100kHz...1MHz- Broad operating temperature range: -25°C...90°C- Package QFN-24
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Power Management Part No. Supply Short Description FeaturesAPQ03SN80AB 800V 3A
APQ02SN60AH 600V 2A
APQ08SN50BF 500V 8A
APQ5ESN40AH 400V 5.5A
APQ57SN10BH 100V 57A
APQ50SN06AH 60V 50A
APQ16SN06AB 60V 16A
Icc These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on-state resistance, provide superior switching performance, withstand high energy pulse in the avalanche & commutatation mode. Well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
- 800 V / 3A- R
DS(on) = 3.6Ω(typ), V
GS=10V, I
D=1.5A
- Fast switching - 100% avalanche tested- Improved dv / dt capability
These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on-state resistance, provide superior switching performance, withstand high energy pulse in the avalanche & commutatation mode. Well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
- 600V / 2A- R
DS(on)=3.8Ω(typ), V
GS=10V, I
D=1.2A
- Fast switching- 100% avalanche tested- Improved dv / dt capability
These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on-state resistance, provide superior switching performance, withstand high energy pulse in the avalanche & commutatation mode. Well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
- 500V / 8A- R
DS(on)=0.72Ω(typ), V
GS=10V, I
D=4.8A
- Fast switching- 100% avalanche tested- Improved dv / dt capability
These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on-state resistance, provide superior switching performance, withstand high energy pulse in the avalanche & commutatation mode. Well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
- 400V / 5.5A- R
DS(on)=0.85Ω(typ), V
GS=10V, I
D=3.3A
- Fast switching- 100% avalanche tested- Improved dv / dt capability
These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on-state resistance, provide superior switching performance, withstand high energy pulse in the avalanche & commutatation mode. Well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
- 100V / 57A- R
DS(on)=18mΩ(max), V
GS+10V, I
D+28.5A
- Fast switching- 100% avalanche tested- Imprvoved dv / dt capability
These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on-state resistance, provide superior switching performance, withstand high energy pulse in the avalanche & commutatation mode. Well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
- 60V / 50A- R
DS(on)=19mΩ(typ), V
GS=10V, I
D=30A
- Fast swtiching- 100% avalanche tested- Improved dv / dt capability
These N-Channel enhancement mode power field effect transistors are produced using planar stripe DMOS technology. Designed to minimize on-state resistance, provide superior switching performance, withstand high energy pulse in the avalanche & commutatation mode. Well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
- 60V / 16A- R
DS(on)=52mΩ(typ), V
GS=10V, I
D=15A
- Fast switching- 100% avalanche tested- Improved dv/dt capability
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Power ManagementPart No. Supply Short Description FeaturesAMG-Q05DM06AV 60V 4.2A
Icc Built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance RDS(on) for the power MOSFETs. The complementary H-Bridge consists of 2 PMOS/NMOS transistor pairs. Based on this trench-technology the input gate capacity is very low, so that high switching frequencies are possible thus making it ideal for use in different applications. With technical performance being above & of high density power integration, this makes the SOT8 pad compatible with the DFN8 package, making this product an ideal choice for wide spread high efficiency apllications for motor driving, lighting, & power management.
- Complementary N/P-MOS H-Bridge- Wide power supply range 5V-60V- 60V / 5.1A/ RDS(on) = 34mΩ(typ) -60V / -4.2A/ RDS(on) = 54mΩ(typ)- Low QG pf 9.86/12.6nC for PMOS/NMOS Low CISS of 1447pF/1378pF for PMOS/NMOS- Low voltage gate drive VGS = ±20V- RoHS compliant & green product- Temperature Range -55C…+150C- DFN8L 5x6x0.75mm
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Corporate Headquarters
alpha microelectronics gmbhIm Technologiepark 115236 Frankfurt (Oder)GERMANYTel. +49 (0) 335-557-1750Fax +49 (0) 335-557-1759Email: [email protected]
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Sales Office - Europe
TECAMS - Technology Consulting & Marketing ServicesContact: Franz SvacinaJosefsweg 243A-2392 SulzAUSTRIATel. ++43 720 974343Mob. ++43 664-1206900Email: [email protected]
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Sales Office – North America
alpha microelectronics gmbhContact: Michael HeadPinckney, MI 48169 USATel. ++ 1-734-474-2652Fax ++ 1-734-873-5915Email: [email protected]
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Distributors – North & South AmericaNorth America
Symmetry Electronics CorporationSymmetry World Headquarters5400 West Rosecrans AvenueHawthorne, CA 90250USAToll Free (USA) 1-866-506-8829Tel. 1-310-536-6190Fax 1-536-6188
South America
Symmetry Electronics CorporationSymmetry Mexico Office, Headquarters MexicoGuadalajara, MexicoTel. 011-52-33-3647-3256Fax 011-52-33-3647-3285
Symmetry Electronics CorporationSymmetry Brazil OfficeToll Free (Brazil) 0-800-891-4448Tel. 310-643-3469Fax 310-297-0881
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Distributors - Asia
Alpha Pacific Technologies Co.,Ltd.3F-6, No.18, Lane 609, Sec 5, Chung Sin RoadShan Chung Dist.,New Tapei CityTAIWANTel. + 886-2-29995456Fax + 886-2-29995270 Email: [email protected]: www.apttw.com/index.html
Symmetry Electronics CorporationSymmetry China OfficeA-902, Skyworth Bldg.Gaoxin Ave.,I.S., Nashan DistrictShezhen 518057CHINATel. +86-755-8602-4227Fax +86-755-8636-7338
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