President UniversityErwin SitompulSDP 6/1 Lecture 6 Semiconductor Device Physics Dr.-Ing. Erwin...

President University Erwin Sitompul SDP 6/1

Lecture 6

Semiconductor Device Physics

Dr.-Ing. Erwin SitompulPresident University

http://zitompul.wordpress.com

2 0 1 3


Chapter 6pn Junction Diodes: I-V Characteristics

Semiconductor Device Physics


Majoritycarriers

Majoritycarriers

Qualitative DerivationChapter 6 pn Junction Diodes: I-V Characteristics


Current Flow in a pn Junction DiodeChapter 6 pn Junction Diodes: I-V Characteristics

When a forward bias (VA > 0) is applied, the potential barrier to diffusion across the junction is reduced.

Minority carriers are “injected” into the quasi-neutral regions Δnp > 0, Δpn > 0.

Minority carriers diffuse in the quasi-neutral regions, recombining with majority carriers.


Ideal Diode: AssumptionsChapter 6 pn Junction Diodes: I-V Characteristics

Steady-state conditions.Non-degenerately doped step junction.One-dimensional diode.Low-level injection conditions prevail in the quasi-neutral

regions.No processes other than drift, diffusion, and thermal R–G take

place inside the diode.


N n N n N

( )( )

dn d nx q n qD q n qD

dx dx

J E E

P p P p P

( )( )

dp d px q p qD q p qD

dx dx

J E E

Current Flow in a pn Junction DiodeChapter 6 pn Junction Diodes: I-V Characteristics

Current density J = JN(x) + JP(x)

JN(x) and JP(x) may vary with position, but J is constant throughout the diode.

Yet an additional assumption is now made, that thermal recombination-generation is negligible throughout the depletion region JN and JP are therefore determined to be constants independent of position inside the depletion region.


n-sidep-side

p0 p A

2i

p0 pA

( )

( )

p x N

nn x

N

n0 n D

2i

n0 nD

( )

( )

n x N

np x

N

p p A( )p x N n n D( )n x N

Carrier Concentrations at –xp, +xn

Chapter 6 pn Junction Diodes: I-V Characteristics

Consider the equilibrium carrier concentrations at VA = 0:

If low-level injection conditions prevail in the quasi-neutral regions when VA 0, then:


i P

N i

( )i

( )i

E F kT

F E kT

p n en n e

A2i qV kTnp n e

N ii P

N P

( )( )2i

( )2i

F E kTE F kT

F F kT

np n e e

n e

p nfor x x x

“Law of the Junction”Chapter 6 pn Junction Diodes: I-V Characteristics

The voltage VA applied to a pn junction falls mostly across the depletion region (assuming that low-level injection conditions prevail in the quasi-neutral regions).

Two quasi-Fermi levels is drawn in the depletion region:


p p A( )p x N

n-sidep-side

n n D( )n x N

A

2i

p pA

( ) ( 1)qV kTnn x e

N A

2i

n nD

( ) ( 1)qV kTnp x e

N

Excess Carrier Concentrations at –xp, xn


A

A

2i

p pA

p0

( )

qV kT

qV kT

n en x

N

n e

A

A

2i

n nD

n0

( )

qV kT

qV kT

n ep x

N

p e


A 0.6 0.02586 12 3p p p0( ) 100 1.192 10 cmqV kTn x n e e

12 12 3p p p p p0( ) ( ) 1.192 10 100 1.192 10 cmn x n x n

Example: Carrier InjectionChapter 6 pn Junction Diodes: I-V Characteristics

A pn junction has NA=1018 cm–3 and ND=1016 cm–3. The applied voltage is 0.6 V.

a) What are the minority carrier concentrations at the depletion-region edges?

b) What are the excess minority carrier concentrations?

A 4 0.6 0.02586 14 3n n n0( ) 10 1.192 10 cmqV kTp x p e e

14 4 14 3n n n n n0( ) ( ) 1.192 10 10 1.192 10 cmp x p x p


An n n0( ) ( 1)qV kTp x p e

2n n

P 2p

0 , 0d p p

D xdx

P Pn 1 2( ) x L x Lp x A e A e

0x 0 x

P P pL D for 0x

Excess Carrier DistributionChapter 6 pn Junction Diodes: I-V Characteristics

From the minority carrier diffusion equation,

We have the following boundary conditions:

n ( ) 0p

For simplicity, we develop a new coordinate system:

Then, the solution is given by:

• LP : hole minority carrier diffusion length


An n0( 0) ( 1)qV kTp x p e

A Pn n0( ) ( 1) , 0qV kT x Lp x p e e x

P P'/ '/n 1 2( ) x L x Lp x A e A e

NAp p0( ) ( 1) , 0x LqV kTn x n e e x

A /1 n0 ( 1)qV kTA p e 2 0A

Excess Carrier DistributionChapter 6 pn Junction Diodes: I-V Characteristics

New boundary conditions

n ( ) 0p x

From the x’ → ∞,

From the x’ → 0,

Therefore

Similarly,


A Pn PP P n0

P

( )( ) ( 1)qV kT x Ld p x Dx qD q p e e

dx L

J

NAp NN N p0

N

( )( ) ( 1) x LqV kTd n x Dx qD q n e e

dx L

J

n-side

p-side

p nN P N P0 0x x x x x x

J J J J J

A2 N Pi

N A P D

( 1)qV kTD Dqn e

L N L N

J

pn Diode I–V CharacteristicChapter 6 pn Junction Diodes: I-V Characteristics


A0

2 N P0 i

N A P D

( 1)qV kTI I e

D DI Aqn

L N L N

I A J

pn Diode I–V CharacteristicChapter 6 pn Junction Diodes: I-V Characteristics

A2 N Pi

N A P D

( 1)qV kTD DAqn e

L N L N

• Shockley Equation,for ideal diode

• I0 can be viewed as the drift current due to minority carriers generated within the diffusion lengths of the depletion region


I0 can vary by orders of magnitude, depending on the semiconductor material, due to ni

2 factor. In an asymmetrically doped pn junction, the term associated

with the more heavily doped side is negligible. If the p side is much more heavily doped,

If the n side is much more heavily doped,

2 NP0 i

P D N A

DDI Aqn

L N L N

2 P0 i

P D

DI Aqn

L N

2 N0 i

N A

DI Aqn

L N

Diode Saturation Current I0



N P J J J

N p n N p

P p n P n

( ) ( )

( ) ( )

x x x x

x x x x

J J

J J

Diode Carrier CurrentsChapter 6 pn Junction Diodes: I-V Characteristics

• Total current density is constant inside the diode

• Negligible thermal R-G throughout depletion region dJN/dx = dJP/dx = 0


n0p

p0p

p0n

n0n

A2i qV kTnp n e

p A

n D

p Nn N

Excess minoritycarriers

Excess minoritycarriersA P

n n0( ) ( 1)qV kT x Lp x p e e NAp p0( ) ( 1) x LqV kTn x n e e

Carrier Concentration: Forward BiasChapter 6 pn Junction Diodes: I-V Characteristics

Law of the Junction

Low level injection conditions


Carrier Concentration: Reverse BiasChapter 6 pn Junction Diodes: I-V Characteristics

Deficit of minority carriers near the depletion region.Depletion region acts like a “sink”, draining carriers from the

adjacent quasineutral regions


Forward-bias current Reverse-bias current

“Breakdown”

“Slope over” No saturation

Smaller slope

Deviations from the Ideal I-V BehaviorChapter 6 pn Junction Diodes: I-V Characteristics

Si pn-junction Diode, 300 K.


This time no homework.Prepare well for midterm examination.

HomeworkChapter 6 pn Junction Diodes: I-V Characteristics

• Midterm examination covers material of Lecture 1 until Lecture 6.

• Two A4- formula sheets may be used during exam. Formula sheets may not contain problems and solutions.

• The use of calculator is allowed.• No notebooks, tablets, smart phones, nor any

other electronics may be used during exam.


Exercise ProblemsChapter 6 pn Junction Diodes: I-V Characteristics

1. A certain Silicon sample is doped differently in two regions. Region A is doped with Boron (7×1016 cm–3) and Arsenic (3×1016 cm–3) while Region B only with Arsenic (1018 cm–3). At 300 K, calculate the resistance of the block.

1 mm

3 mm3 mm

2 cm

A

B

V

2. An Si sample is given with ND = 1018 cm–3. The minority carrier lifetimes are given by 10–7 s. Holes are injected at x = 0 to generate a certain hole diffusion current density of 10 μA/cm2. Low level injection condition is assumed to be prevailed. If the hole concentration decays exponentially as x increases with a certain diffusion length constant, determine the excess concentration required to be supplied at x = 0.


Exercise ProblemsChapter 6 pn Junction Diodes: I-V Characteristics

3. A certain Si pn-junction diode is doped with NA = 2×1018 cm–3 and ND = 4×1018 cm–3. The constants are given by DN = 18 cm2/s, DP = 12 cm2/s, and τp = τn = 10–7 s. (a) Calculate the built-in voltage Vbi and the depletion width W at T = 300 K.

Which side of the depletion layer will be wider, on the p-side or on the n-side?

(b) Determine Jdiff if VA = 0.5 V? What is the change if VA = –0.2 V?

President UniversityErwin SitompulSDP 6/1 Lecture 6 Semiconductor Device Physics Dr.-Ing. Erwin...

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