Pixel detector development: sensor

Epitaxial wafer with sensor: first design

5 readout chip sensor

4 readout chip sensor

pixel Pad for bump bonding

Pixel detector development: readout electronicsToPix specifications: Custom made pixel readout chip developed using 130 nm CMOS technology

Pixel readout size 100mm x 100mm

Chip active area 11.4 mm x 11.6 mm

dE/dx measurement ToT, 12 bits dynamic range

Noise <0.032 fC (200 e-)

Clock frequency 155.52 MHz

Time resolution 6.4 ns (1.85 ns rms)

Power consumption <<500 mW/cm2

Max. event rate @2·107pbar-p ann/s:

~ 12·106 hits/(cm2·s)

Pixel detector development: Front-end electronics

Prototype with 320 readout cells

ToPix_v2: Custom made pixel readout chip

ANALOG

DIG

ITA

L

latchenable

mask5

Ifb

Cint

preamp comp

baselinerestorer

DAC

12 127

12

mask

le_r

egte

_reg

cfg_

reg

controllogic

ToT busCLK:

INPUT

Pixel readout cell,100 mm x 100 mm size

Electrical scheme of the readout cell

Characterization of front-end and sensor prototypes

ToPix: Custom made pixel readout chip

Channel to channel ToT dispersion:

10 %

Epi-SensorsTests with a 90Sr source

Measurements with epitaxial pixel prototypes connected to ToPix front-end chip with wire bonding

Epitaxial silicon pixel size: 125mm x 325mm, 50 mm thick