Piezoelectric 2
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Transcript of Piezoelectric 2
Piezoelectric Materials!Dr. Tanmoy Mai- MSE 689
Module-‐Piezo-‐II
Certain crystalline ionic materials when under mechanical stress
leads to the forma-on of dipoles in the bulk giving rise to
polariza-on charges on the external surface of this crystal (posi-ve on one surface and nega-ve on opposite surface) . This charge leads to
development of voltage difference across the two surfaces.
The reverse is also true for these crystals, i.e. if external bias is
applied across it’s two surfaces, there develops strain in the crystal,
though very small.
These two effects collec-vely define Piezoelectricity.
Piezoelectricity
• Reason for Piezoelectric effect: The origin of this effect lies in the movement of ions in the
crystal due to the mechanical stress or external electric-‐filed.
o So should we expect all ionic solids to show this effect ? -‐-‐-‐-‐-‐ No.
Only those ionic solids where the unit-‐cell does Not have center of inversion or also called center of symmetry, show this effect.
No inversion center
SiO2 (Crystalline form)
NaCl
Trigonal crystal system
With inversion center
• Piezoelectric effect in ionic solid that have No inversion center :
Quartz (Crystalline SiO2)
• A field of 1000V/cm across the opposite surface of a cube with 1 cm3 volume causes change of 10 Angstrom in the edge length. Of course it is negligible and may not look very interes-ng.
• However, think of the reverse effect, i.e. a mechanical stress causing the cube edge to change by 10Å can generate voltage difference of 1000 V !!!
Principle of Electromechanical Coupling Enhancement
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P s
P s
E
E 2
E 1
E 1
Principle of Electromechanical Coupling Enhancement
d 33
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Ps
E 2
d 15
d15 >> d33 > d31 in Perovskites
Ps
E2
d31
Piezoelectric materials belong to the non-centrosymmetric point groups (with the exemption of 432) or non-centrosymmetric Curie groups.
Consider non-linear electric field strains:
Hooke’s Law Piezoelectric
Effect Electrostrictive Effect
Mijkl – electrostrictive coefficient
Electrostrictive coefficients are present in all non-metallic materials regardless of symmetry
Electrostriction can also be defined through the polarization:
x = QP2
In a ferroelectric: P = Pspontaneous + Pind; Pind ≈ ε0 εrE
x = Q (PS + Pind)2.
= Q (Ps + ε0εrE)2
= Q Ps2 + 2Qε0εrPsE + Q(ε0εr)2E2
Intrinsic Piezo term d= 2Qε0εrPs
M=Q(ε0εr)2
isotropic
Piezoelectric Materials
Application Examples • Piezoelectric Crystals– Quartz Frequency Control Devics e.g. Watches SAW Devices - Filters
• Ferroelectric
– PZT
* Actuators
* Fuel Injectors (Automotive)
* Inkjet Printerheads
(Consumer Electronics)
* Ultrasound Probes
(Biomedical)
* Dynamic Pressure
Sensors
Development of PZT
12
Lead zirconate titanate, Pb(ZrxTi1-x)O3 (PZT), belong to the family of A +2B+4O3 type perovskite structures. PZT is a solid solution of PbZrO3 and PbTiO3.
The spontaneous polarization of PbTiO3 (≈81µC/ cm2) is also three times larger than that of BaTiO3 (≈25 µC/cm2)
PbTiO3 has high tetragonality (c/a = 1.06) as compared to that of BaTiO3 (c/a = 1.008) which leads to the cracking of PbTiO3 on cooling through the Curie point (4900C) after sintering due to high transformation strains.
In order to reduce the tetragonality of PbTiO3, several compositional modifications were performed and in this way PZT was discovered when Zr was substituted for Ti.
AXII BVI OVI
A O B
FE-Tetragonal FE-Rhombohedral
After Jaffe et. al., 1964.
15
Doping of PZT
Typical Properties
“Hard” “Soft”
d33 150 pC/N 593 pC/N
d31 - 60 pC/N - 273 pC/N
Tc 300˚C 195˚C
r 7.7 g/cm3 7.8 g/cm3
e33 1,000 3,400
Loss 0.004 0.02
Ec 15 kV/cm 6 kV/cm
Q > 1,000 60–80
Hard PZT •Relatively low dielectric constant
~1000
•Low dielectric loss
tand0.005
•Moderately lowered electronic resistivity
•High mechanical Q
•More difficult to pole and depole
•Dark color
Soft PZT •Increased dielectric contant
~1800
•High dielectric loss
tan d 0.02
•Increased elastic compliance
•Low Qm
•High piezoelectric coupling
•Low coercive field
•Increased resistivity
•Small aging effects
19
Softeners
Widely used soft additives are La3+, Sb3+, Sb5+, Nb5+, Nd3+, Bi3+, V5+ cations. These softeners soften the properties of PZT. They usually cause a decrease in the coercive field, electrical and mechanical quality factors and increase in the dielectric constant, electromechanical coupling coefficient, elastic compliance coefficient and resistivity. The mechanism under which PZT ceramics exhibit enhanced piezoelectric response is mainly associated with the creation of Pb vacancies. The existence of Pb vacancies makes the domain wall motion easier during poling, which in turn enhances the dielectric and piezoelectric response of PZT.
Hardeners Hardeners increase the coercive field and quality factors while they tend to decrease the dielectric constant, electromechanical coupling coefficient and resistivity. Hard additives include K+, Na+, Fe 2+, Fe 3+, Co 2+, C03+, Ni 2+, Mg 2+, Al 3+, Cr 3+,Ga 3+, In 3+ Sc 3+ cations.
Hard PZT High power or hard PZT can withstand high levels of electrical
excitation and mechanical stress. Suited for high voltage, high power generators and transducers.
PZT-4 (DoD Type I)
PZT used for ultrasonic cleaning, sonar, high power acoustic radiation sources. Can be used under constant and repetitive conditions.
PZT-4D
Higher piezoelectric activity at the expense of slight increase in mechanical and dielectric loss. Used in motor-type applications.
PZT-8 (DoD Type III)
Slightly lower piezoelectric activity than PZT-4. Has extremely high mechanical quality and low tanfE losses. Modified MPB – Sr and Fe additions.
High Sensitivity “Soft” Materials -sensors, as under drive the higher loss can cause heating
PZT-5A (DoD Type II) High sensitivity and permittivity and time stability Pb (Zr0.52Ti0.48) O3+Nb2O5
PZT-5B Used in Bimorph-higher sensitivity and higher piezoelectric activities than PZT-5A. (lower TC than in PZT-5A.)
PZT-5J Used in fuses, hydrophones and other applications requiring a combination of high energy and high voltage output.
PZT-5H (DoD Type VI) The lowest Curie temperature of PZT-5 family. This limits the temperature stability. Wide range of uses from hydrophones to ink jet printers. High K, d33 and K33.
PZT-5R Applications as towed arrays – high accoustic sensitivity and high coupling with high permittivity
PZT-7A This material is used in ultrasonic delay lines and other high frequency shear resonance applications. High K15, low K and high temperature stability to provide low distortion in electric resonance circuits.
PZT-7D With lower dissipation than PZT-7A and used in applications requiring higher power handling. Higher K, higher d33 with a little reduction in K33. Low aging rates.
PMN-1 Used in accelometers, floor detection and thickness gauges. modified lead metaniobate – high Curie temperature.
PMN-2 Higher operating conditions than PZT but lower than PMN-1. Higher piezoelectric activity, low K.
Crystal Orientation Dependence of Piezoelectricity in PZT
Convential Orientation along Ps
Enhancement by 5 times
e 31 ef
f C/m 2
3.2
3.6
4
4.4
4.8
5.2
5.6
6
6.4
Zr/Ti content 40/60 50/50 60/40 70/30 80/20
PZT(100)
PZT(111)
Random Orientation
*Soft materials are sometimes developed from basic PZT by lower transition temperatures through isovalent substitutions such as Sr+2 and Ba+2
This raises both K and d33.
Other Piezoelectrics:
PNN (Relaxor)
PZ PT
xPbTiO3-(1-x) Pb (Mg1/3Nb2/3) O3
Electrostrictive→induced piezoelectric-piezoelectric
Modified Lead Titanate (PbSm) (Ti,Mn),(Pb,Ca) (Ti,Mn) O3
High Q – 1000
d33≃40 to 65 pC/N
Piezo multilayer actuators for Diesel Common Rail injection systems
Piezo actuator module Piezo Injector
Injector head
Injector body
Nozzle
K. Lubitz et. al [Siemens]
Search for New Piezoelectrics
€
P = dX
€
x = dE
Designing MPB from Tolerance Factor
Ref. Isupov et al. (1983)
AXII BVI OVI
Tolerance Factor – TC Rela-onship
Look to lower tolerance factor for increased TC
Ref.: V.A. Isupov et al, Ferroelectrics 207 (3-4): 507–517 (1998):
‘t’ > 1 Tetragonal
‘t’<1 Rhombohedral
Electromechanical Proper-es: MPB Behavior
Properties Summary: • BiScO3-xPbTiO3 Analogous to PZT • Peak properties for 64mol% PT
• K33 = 2000 • kp = 0.56 • d33 = 460 pC/N (520pC/N-Berlincourt)
R. Eitel et al., Jap. J. Appl. Phys. 40, 5999 (2001).
Bi-‐Perovskites—A Wide Composi-onal Space to Explore New High Tc, Piezoelectric Materials
Binary Systems BiMe+3O3–PbTiO3
BiFe+3O3–PbTiO3
BiMn+3O3–PbTiO3
BiCuO3–PbTiO3
BiScO3–PbTiO3
BiInO3–PbTiO3
BiGaO3–PbTiO3
BiYbO3–PbTiO3
Bi(Me+21/2Me+4
1/2)O3–PbTiO3
Bi(Mg1/2Ti1/2)O3–PbTiO3
Bi(Ni1/2Ti1/2)O3–PbTiO3
Bi(Co1/2Ti1/2)O3–PbTiO3
Bi(Mg1/2Zr1/2)O3–PbTiO3
Bi(Zn1/2Zr1/2)O3–PbTiO3
Bi(Me+22/3Me+5
1/3)O3–PbTiO3 Bi(Mg2/3Nb1/3)O3–PbTiO3
Bi(Zn2/3Nb1/3)O3–PbTiO3
Bi(Mg2/3Ta1/3)O3–PbTiO3
Bi(Zn2/3Ta1/3)O3–PbTiO3
Bi(Co2/3Ta1/3)O3–PbTiO3
Bi(Co2/3Nb1/3)O3–PbTiO3
Bi(Me+23/4Me+6
1/4)O3–PbTiO3
Bi(Mg3/4W1/4)O3–PbTiO3
Bi(Co3/4W1/4)O3–PbTiO3
Bi(Me+zxMey
1-x)O3
For all zx+y(1-x)=3 and ionic radii compatible with perovskite stability