AM01475v4

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

FeaturesOrder code VDS RDS(on) max. ID PTOT

STL6P3LLH6 30 V 30 mΩ 6 A 2.9 W

• Very low on-resistance• Very low gate charge• High avalanche ruggedness• Low gate drive power loss

Applications• Switching applications

DescriptionThis device is a P-channel Power MOSFET developed using the STripFET H6technology with a new trench gate structure. The resulting Power MOSFET exhibitsvery low RDS(on) in all packages.

Product status link

STL6P3LLH6

Product summary

Order code STL6P3LLH6

Marking 6P3L

Package PowerFLAT3.3 x 3.3

Packing Tape and reel

Note: For the P-channel PowerMOSFETs the actual polarity of thevoltages and the current must be

reversed.

P-channel 30 V, 24 mΩ typ., 6 A STripFET H6 Power MOSFET in a PowerFLAT 3.3 x 3.3 package

STL6P3LLH6

Datasheet

DS9257 - Rev 4 - March 2020For further information contact your local STMicroelectronics sales office.

www.st.com

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 30 V

VGS Gate-source voltage ±20 V

ID(1)Drain current (continuous) at TC = 25 °C 6 A

Drain current (continuous) at TC = 100 °C 3.8 A

IDM(1)(2) Drain current (pulsed) 24 A

PTOT Total power dissipation at TC = 25 °C 2.9 W

Tstg Storage temperature - 55 to 150 °C

TJ Max. operating junction temperature 150 °C

1. The value is rated according Rthj-pcb.

2. Pulse width limited by safe operating area.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 2.50 °C/W

Rthj-pcb(1) Thermal resistance junction-pcb, single operation 42.8 °C/W

1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec.

Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

STL6P3LLH6Electrical ratings

DS9257 - Rev 4 page 2/12

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 250 µA 30 V

IDSS Zero gate voltage drain currentVGS = 0 V, VDS = 30 V 1 µA

VGS = 0 V, VDS = 30 V, TC = 125 °C 10 µA

IGSS Gate-body leakage current VDS = 0 V, VGS = ±20 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 V

RDS(on) Static drain-source on-resistanceVGS = 10 V, ID = 3 A 24 30 mΩ

VGS = 4.5 V, ID = 3 A 38 50 mΩ

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 25 V, f = 1 MHz, VGS = 0 V

- 1450 - pF

Coss Output capacitance - 178 - pF

Crss Reverse transfer capacitance - 120 - pF

Qg Total gate charge VDD = 24 V, ID = 6 A, VGS = 4.5 V

(see Figure 12. Switching times testcircuit for resistive load)

- 12 - nC

Qgs Gate-source charge - 4.4 - nC

Qgd Gate-drain charge - 5 - nC

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time

VDD = 24 V, ID = 3 A,

RG = 4.7 Ω, VGS = 10 V

- 15 - ns

tr Rise time - 15 - ns

td(off) Turn-off delay time - 24 - ns

tf Fall time - 21 - ns

Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

STL6P3LLH6Electrical characteristics

DS9257 - Rev 4 page 3/12

Table 6. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD Forward on voltage ISD = 6 A, VGS = 0 V - 1.1 V

trr Reverse recovery timeISD = 6 A, di/dt = 100 A/µs

VDD = 16 V, TJ = 150 °C

- 15 ns

Qrr Reverse recovery charge - 6.5 nC

IRRM Reverse recovery current - 0.9 A

Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

STL6P3LLH6Electrical characteristics

DS9257 - Rev 4 page 4/12

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area

ID

10

1

0.1

0.1 1 VDS(V)10

(A)

Operation in

this a

rea is

Limite

d by max R

DS(on)

10ms

1s100ms

0.01

Tj=150°CTc=25°CSingle pulse

GIPG171120141448MT

Figure 2. Thermal impedance

Single pulse

d=0.5

0.05

0.02

0.01

0.1

0.2

K

10 tp(s)-4 10 -3

10 -2

10 -1

10 -510 -3

10 -2 10 -1 10 0

case

10 1

GIPG171120141449MT

Figure 3. Output characteristics

ID

25

15

5

00 1 VDS(V)2

(A)

32V

3V

VGS=6, 7, 8, 9, 10V

10

20

30 4V

5V35

40

GIPG171120141450MT

Figure 4. Transfer characteristics

ID

30

20

10

00 4 VGS(V)7

(A)

2 6

5

15

25

35

VDS=2V

1 3 5

GIPG171120141451MT

Figure 5. Gate charge vs gate-source voltage

VGS

6

4

2

00 8 Qg(nC)

(V)

24

8

12 16

10

28

12

4 20

ID=6A

GIPG171120141452MT

Figure 6. Static drain-source on-resistance

RDS(on)

24.0

23.5

23.00 2 ID(A)

(mΩ)

1 3

24.5

VGS=10V

4 5 6

GIPG171120141453MT

STL6P3LLH6Electrical characteristics (curves)

DS9257 - Rev 4 page 5/12

Figure 7. Capacitance variations

C

600

400

200

00 10 VDS(V)

(pF)

5 15

Ciss

CossCrss

20 25

800

1000

1200

1400

1600

GIPG171120141452MT

Figure 8. Normalized gate threshold voltage vstemperature

VGS(th)

1.0

0.8

0.6

0.4-50 0 TJ(°C)

(norm)

-25

1.2

7525 50 100

ID=250µA

-75 125 150

GIPG171120141455MT

Figure 9. Normalized on-resistance vs temperature

1.2

RDS(on)

TJ(°C)

(norm)

-50 0-25 7525 50 100-75 125 150

1.0

0.8

0.6

0.4

1.6

1.4

GIPG171120141456MT

ID=3A

Figure 10. Normalized VDS vs temperature

VDS

TJ(°C)

(norm)

0.94

0.96

0.98

1.00

1.02

1.04

1.06

ID=1mA1.08

-50 0-25 7525 50 100-75 125 150

GIPG171120141457MT

Figure 11. Source-drain diode forward characteristics

VSD

0 4 ISD(A)

(V)

2 60.4

0.5

0.6

0.7

TJ=-55°C

TJ=175°C

TJ=25°C

0.8

0.9

1.0

GIPG171120141458MT

STL6P3LLH6Electrical characteristics (curves)

DS9257 - Rev 4 page 6/12

3 Test circuits

Figure 12. Switching times test circuit for resistive load Figure 13. Gate charge test circuit

Figure 14. Test circuit for inductive load switching and diode recovery times

STL6P3LLH6Test circuits

DS9257 - Rev 4 page 7/12

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 PowerFLAT 3.3 x 3.3 type F mechanical data

Figure 15. PowerFLAT 3.3 x 3.3 type F drawing

BOTTOM VIEW

SIDE VIEW

TOP VIEW

8465286_Rev2

STL6P3LLH6Package information

DS9257 - Rev 4 page 8/12

Table 7. PowerFLAT 3.3 x 3.3 type F mechanical data

Dim.mm

Min. Typ. Max.

A 0.70 0.80 0.90

b 0.25 0.30 0.39

c 0.14 0.15 0.20

D 3.10 3.30 3.50

D1 3.05 3.15 3.25

D2 2.15 2.25 2.35

e 0.55 0.65 0.75

E 3.10 3.30 3.50

E1 2.90 3.00 3.10

E2 1.60 1.70 1.80

H 0.25 0.40 0.55

K 0.65 0.75 0.85

L 0.30 0.45 0.60

L1 0.05 0.15 0.25

L2 0.15

J 8° 10° 12°

Figure 16. PowerFLAT 3.3 x 3.3 type F recommended footprint

8465286_Rev2_footprint

STL6P3LLH6PowerFLAT 3.3 x 3.3 type F mechanical data

DS9257 - Rev 4 page 9/12

Revision history

Table 8. Document revision history

Date Revision Changes

04-Mar-2013 1 First release.

28-Nov-2013 2

• Modified: PTOT value, silhouette and not found in cover page• Modified: VGS and PTOT values in not found

• Modified: Rthj-pcb value and note (1) in Table 3: "Thermal data"

• Modified: IGSS test conditions value• Modified: Qg in Table 5: "Dynamic"

• Added: Table 9: "PowerFLAT™ 3.3 x 3.3 type F mechanical data", Figure 18:"PowerFLAT™ 3.3 x 3.3 type F drawing" and Figure 19: "PowerFLAT™ 3.3 x 3.3 type Frecommended footprint".

• Minor text changes

26-Nov-2014 3

Updated Figure 1: "Internal schematic diagram".

Added Section 4.1: "PowerFLAT™ 3.3 x 3.3 type C package information" and Section 4.2:"PowerFLAT™ 3.3 x 3.3 type F package information".

Minor text changes.

09-Mar-2020 4Updated Section 4 Package information.

Minor text changes.

STL6P3LLH6

DS9257 - Rev 4 page 10/12

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8

4.1 PowerFLAT 3.3 x 3.3 type F mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

STL6P3LLH6Contents

DS9257 - Rev 4 page 11/12

IMPORTANT NOTICE – PLEASE READ CAREFULLY

STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to STproducts and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. STproducts are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.

Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design ofPurchasers’ products.

No license, express or implied, to any intellectual property right is granted by ST herein.

Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.

ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or servicenames are the property of their respective owners.

Information in this document supersedes and replaces information previously supplied in any prior versions of this document.

© 2020 STMicroelectronics – All rights reserved

STL6P3LLH6

DS9257 - Rev 4 page 12/12