Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A...

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PowerFLAT 5x6 AM15540v2 5 6 7 8 1 2 3 4 Top View D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code V DS R DS(on) max. I D P TOT STL120N8F7 80 V 4.8 mΩ 120 A 140 W Among the lowest R DS(on) on the market Excellent FoM (figure of merit) Low C rss /C iss ratio for EMI immunity High avalanche ruggedness Applications Switching applications Description This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Product status link STL120N8F7 Product summary Order code STL120N8F7 Marking 120N8F7 Package PowerFLAT 5x6 Packing Tape and reel N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 - Rev 6 - February 2020 For further information contact your local STMicroelectronics sales office. www.st.com

Transcript of Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A...

Page 1: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

PowerFLAT 5x6

AM15540v2

5678

1 2 3 4

Top View

D(5, 6, 7, 8)

G(4)

S(1, 2, 3)

FeaturesOrder code VDS RDS(on) max. ID PTOT

STL120N8F7 80 V 4.8 mΩ 120 A 140 W

• Among the lowest RDS(on) on the market• Excellent FoM (figure of merit)• Low Crss/Ciss ratio for EMI immunity• High avalanche ruggedness

Applications• Switching applications

DescriptionThis N-channel Power MOSFET utilizes STripFET F7 technology with an enhancedtrench gate structure that results in very low on-state resistance, while also reducinginternal capacitance and gate charge for faster and more efficient switching.

Product status link

STL120N8F7

Product summary

Order code STL120N8F7

Marking 120N8F7

Package PowerFLAT 5x6

Packing Tape and reel

N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

STL120N8F7

Datasheet

DS10754 - Rev 6 - February 2020For further information contact your local STMicroelectronics sales office.

www.st.com

Page 2: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

1 Electrical ratings

Table 1. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 80 V

VGS Gate-source voltage ±20 V

ID(1)Drain current (continuous) at TC = 25 °C 120

ADrain current (continuous) at TC = 100 °C 90

IDM(1) (2) Drain current (pulsed) 480 A

ID(3)Drain current (continuous) at Tpcb = 25 °C 23

ADrain current (continuous) at Tpcb = 100 °C 17

IDM(2)(3) Drain current (pulsed) 92 A

PTOT(1) Total dissipation at TC = 25 °C 140 W

PTOT(3) Total dissipation at Tpcb = 25 °C 4.8 W

Tstg Storage temperature range-55 to 175 °C

TJ Operating junction temperature range

1. This value is rated according to Rthj-c.

2. Pulse width is limited by safe operating area.3. This value is rated according to Rthj-pcb.

Table 2. Thermal data

Symbol Parameter Value Unit

Rthj-pcb(1) Thermal resistance junction-pcb 31.3°C/W

Rthj-case Thermal resistance junction-case 1.05

1. When mounted on a 1-inch² FR-4 board, 2oz Cu, t < 10 s.

STL120N8F7Electrical ratings

DS10754 - Rev 6 page 2/16

Page 3: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 3. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 80 V

IDSS Zero gate voltage drain current VGS = 0 V, VDS = 80 V 1 µA

IGSS Gate-body leakage current VDS = 0 V, VGS = 20 V 100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2.5 4.5 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 11.5 A 4.0 4.8 mΩ

Table 4. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance

VDS = 40 V, f = 1 MHz, VGS = 0 V

- 4600 -

pFCoss Output capacitance - 800 -

Crss Reverse transfer capacitance - 64 -

Qg Total gate charge VDD = 40 V, ID = 23 A, VGS = 10 V

(see Figure 13. Test circuit for gatecharge behavior)

- 60 -

nCQgs Gate-source charge - 24.7 -

Qgd Gate-drain charge - 14.8 -

RG Gate input resistanceID = 0 A, gate DC bias = 0 V, f = 1 MHz,

magnitude of alternative signal = 20 mV- 2.0 Ω

Table 5. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 40 V, ID = 11.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 12. Test circuit for resistiveload switching times andFigure 17. Switching time waveform)

- 34.5 -

nstr Rise time - 16.8 -

td(off) Turn-off delay time - 60 -

tf Fall time - 15.4 -

Table 6. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

VSD (1) Forward on voltage VGS = 0 V, ISD = 23 A - 1.2 V

trr Reverse recovery time ISD = 23 A, di/dt = 100 A/µs, VDD = 64 V

(see Figure 14. Test circuit for inductiveload switching and diode recovery times)

- 48.6 ns

Qrr Reverse recovery charge - 65.6 nC

IRRM Reverse recovery current - 2.7 A

1. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

STL120N8F7Electrical characteristics

DS10754 - Rev 6 page 3/16

Page 4: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

2.1 Electrical characteristics curves

Figure 1. Safe operating area

GIPG270715OD8FLSOA

10 2

10 1

10 010 -1 10 0 10 1

I D (A)

V DS (V)

10 µs

1 ms

10 ms

100 µs

Operat

ion in

this

area i

s

limite

d by m

ax. R

DS(on)

T j = 175 °CT c = 25 °C

single pulse

Figure 2. Thermal impedance

GIPG270715OD8FLZTH

10 -1

10 -210 -5 10 -4 10 -3 10 -2

K

t p (s)

Figure 3. Output characteristics

GIPG270715OD8FLOCH

250

200

150

100

50

00 2 4 6 8

I D (A)

V DS (V)

V GS = 10 VV GS = 9 V

V GS = 8 V

V GS = 7 V

V GS = 6 V

V GS = 5 V

Figure 4. Transfer characteristics

GIPG270715OD8FLTCH

250

200

150

100

50

00 2 4 6 8

I D (A)

V GS (V)

V DS = 2 V

Figure 5. Gate charge vs gate-source voltage

GIPG270715OD8FLQVG

12

10

8

6

4

2

00 10 20 30 40 50 60 70

VGS (V)

Qg (nC)

VDD DD = 40 V, ID D = 23 A

Figure 6. Static drain-source on-resistance

GIPD241020181347RID

5.00

4.60

4.20

3.80

3.40

3.000 20 40 60 80 100 120

RDS(on)

ID (A)

VGS = 10V

(mΩ)

STL120N8F7Electrical characteristics curves

DS10754 - Rev 6 page 4/16

Page 5: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

Figure 7. Capacitance variations

GIPG270715OD8FLCVR

10 3

10 2

10 110 -1 10 0 10 1

C (pF)

V DS (V)

C ISS

C OSS

C RSSf = 1 MHz

Figure 8. Normalized gate threshold voltage vstemperature

GIPG270715OD8FLVTH

1.1

1.0

0.9

0.8

0.7

0.6

0.5

0.4-75 -25 25 75 125 175

V GS(th) (norm.)

T j (°C)

I D = 250 µA

Figure 9. Normalized on-resistance vs temperature

GIPG270715OD8FLRON

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6-75 -25 25 75 125 175

R DS(on) (norm.)

T j (°C)

V GS = 10 V

Figure 10. Normalized V(BR)DSS vs temperature

GIPG270715OD8FLBDV

1.04

1.02

1.00

0.98

0.96

0.94-75 -25 25 75 125 175

V (BR)DSS (norm.)

T j (°C)

I D = 1 mA

Figure 11. Source-drain diode forward characteristics

GIPG270715OD8FLSDF

1.0

0.9

0.8

0.7

0.60 20 40 60 80 100

V SD (V)

I SD (A)

T j = -55 °C

T j = 25 °C

T j = 175 °C

STL120N8F7Electrical characteristics curves

DS10754 - Rev 6 page 5/16

Page 6: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

3 Test circuits

Figure 12. Test circuit for resistive load switching times

AM01468v1

VD

RG

RL

D.U.T.

2200μF VDD

3.3μF+

pulse width

VGS

Figure 13. Test circuit for gate charge behavior

AM01469v1

47 kΩ1 kΩ

47 kΩ

2.7 kΩ

1 kΩ

12 V

IG= CONST100 Ω

100 nF

D.U.T.

+pulse width

VGS

2200μF

VG

VDD

Figure 14. Test circuit for inductive load switching anddiode recovery times

AM01470v1

AD

D.U.T.S

B

G

25 Ω

A A

B B

RG

GD

S

100 µH

µF3.3 1000

µF VDD

D.U.T.

+

_

+

fastdiode

Figure 15. Unclamped inductive load test circuit

AM01471v1

VD

ID

D.U.T.

L

VDD+

pulse width

Vi

3.3µF

2200µF

Figure 16. Unclamped inductive waveform

AM01472v1

V(BR)DSS

VDDVDD

VD

IDM

ID

Figure 17. Switching time waveform

AM01473v1

0

VGS 90%

VDS

90%

10%

90%

10%

10%

ton

td(on) tr

0

toff

td(off) tf

STL120N8F7Test circuits

DS10754 - Rev 6 page 6/16

Page 7: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,depending on their level of environmental compliance. ECOPACK specifications, grade definitions and productstatus are available at: www.st.com. ECOPACK is an ST trademark.

4.1 PowerFLAT 5x6 type C package information

Figure 18. PowerFLAT 5x6 type C package outline

Bottom view

Side view

Top view

8231817_typeC_Rev20

STL120N8F7Package information

DS10754 - Rev 6 page 7/16

Page 8: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

Table 7. PowerFLAT 5x6 type C package mechanical data

Dim.mm

Min. Typ. Max.

A 0.80 1.00

A1 0.02 0.05

A2 0.25

b 0.30 0.50

C 5.80 6.00 6.20

D 5.00 5.20 5.40

D2 4.15 4.45

D3 4.05 4.20 4.35

D4 4.80 5.00 5.20

D5 0.25 0.40 0.55

D6 0.15 0.30 0.45

e 1.27

E 5.95 6.15 6.35

E2 3.50 3.70

E3 2.35 2.55

E4 0.40 0.60

E5 0.08 0.28

E6 0.20 0.325 0.45

E7 0.75 0.90 1.05

K 1.05 1.35

L 0.725 1.025

L1 0.05 0.15 0.25

θ 0° 12°

STL120N8F7PowerFLAT 5x6 type C package information

DS10754 - Rev 6 page 8/16

Page 9: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

4.2 PowerFLAT 5x6 type C SUBCON package information

Figure 19. PowerFLAT 5x6 type C SUBCON package outline

8472137_SUBCON_998G_REV48472137_SUBCON_998G_REV4

STL120N8F7PowerFLAT 5x6 type C SUBCON package information

DS10754 - Rev 6 page 9/16

Page 10: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

Table 8. PowerFLAT 5x6 type C SUBCON package mechanical data

Dim.mm

Min. Typ. Max.

A 0.90 0.95 1.00

A1 0.02

b 0.35 0.40 0.45

b1 0.30

c 0.21 0.25 0.34

D 5.10

D1 4.80 4.90 5.00

D2 4.01 4.21 4.31

e 1.17 1.27 1.37

E 5.90 6.00 6.10

E1 5.70 5.75 5.80

E2 3.54 3.64 3.74

E4 0.15 0.25 0.35

E5 0.26 0.36 0.46

H 0.51 0.61 0.71

K 0.95

L 0.51 0.61 0.71

L1 0.06 0.13 0.20

L2 0.10

P 1.00 1.10 1.20

θ 8° 10° 12°

STL120N8F7PowerFLAT 5x6 type C SUBCON package information

DS10754 - Rev 6 page 10/16

Page 11: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

Figure 20. PowerFLAT 5x6 recommended footprint (dimensions are in mm)

8231817_FOOTPRINT_simp_Rev_20

STL120N8F7PowerFLAT 5x6 type C SUBCON package information

DS10754 - Rev 6 page 11/16

Page 12: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

4.3 PowerFLAT 5x6 packing information

Figure 21. PowerFLAT 5x6 tape (dimensions are in mm)

(I) Measured from centreline of sprocket hole to centreline of pocket.

(II) Cumulative tolerance of 10 sprocket holes is ±0.20.

(III) Measured from centreline of sprocket hole to centreline of pocket

Base and bulk quantity 3000 pcsAll dimensions are in millimeters

8234350_Tape_rev_C

Figure 22. PowerFLAT 5x6 package orientation in carrier tape

Pin 1 identification

STL120N8F7PowerFLAT 5x6 packing information

DS10754 - Rev 6 page 12/16

Page 13: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

Figure 23. PowerFLAT 5x6 reel

STL120N8F7PowerFLAT 5x6 packing information

DS10754 - Rev 6 page 13/16

Page 14: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

Revision history

Table 9. Document revision history

Date Revision Changes

09-Dec-2014 1 First release.

27-Jul-2015 2

Text and formatting changes throughout document.

Datasheet status promoted from preliminary data to production data.

In section Electrical characteristics:

- updated tables Dynamic, Switching times and Source-drain diode

- added section Electrical characteristics (curves)

25-Jan-2016 3 Inserted RG parameter in Dynamic.

09-Feb-2016 4Updated Table 4: "Static" and Section 4.1: "PowerFLAT™ 5x6 type C

package information".

02-Nov-2018 5

Removed maturity status indication from cover page.

Updated title and features in cover page.

Updated Table 3. Static and Figure 6. Static drain-source on-resistance.

Minor text changes.

25-Feb-2020 6Updated Section 4 Package information.

Minor text changes.

STL120N8F7

DS10754 - Rev 6 page 14/16

Page 15: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2

2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3

2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

4.1 PowerFLAT 5x6 type C package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

4.2 PowerFLAT 5x6 type C SUBCON package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.3 PowerFLAT 5x6 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

STL120N8F7Contents

DS10754 - Rev 6 page 15/16

Page 16: Datasheet - STL120N8F7 - N-channel 80 V, 4.0 mΩ typ., 120 ...N-channel 80 V, 4.0 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package STL120N8F7 Datasheet DS10754 -

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STL120N8F7

DS10754 - Rev 6 page 16/16