Ill j~ ( ( ~ Sl b (or the hOI lor k ( 1) or lie 2B

1111 e r j c lt111 Imiddot) h Y s j c o ciCly ~--shy

( ()l[ a rcl1 24-2~

P11 sic sa 1 1 s t r 0 ) rn y -I- CSlCmiddotc Li 2 (I IS~lC

11 HiciJtion ~C (~ 1e i I C lli c 11 p 1i c r s 11 CL ~db ) 1 iJ C 2 ( ~

Number 72 40 72 i5 OL- h111ic CO--dlctors bull

J lin c t io 11 1) d ]) i cl c c ~~~_i l Lll~~ I r~_~~~~ 0 I (i~ _ w D GILL P ~[ CZIN T J ~ARL T middotmiddotC T C CJ ~ middot

andmiddotG B STlEET Iil - KcsS-c h LDh Snn lcsc0~_J_Jl2l-middotshyIe report t11C rlCsu l ts o( our studies on L It errlucncy clcpcuet1cc of the Schottky hllcill pClII) L i l~ 1ill Ii i shy ~)

c2ec ~l-i c Clspon s c ~unctiol1 _~ I1clopld -[t Ji l ~llhmiddot -(II gt middot middott

shytrans- ltJl1dcis-(Cii) in the rJ1fc J 0011 ll)~ ( CllJ

i iHJdition m c)SUr~rle nts C1 the stiJlic c~i( l(c ~t-j c l)[cakGol-n1 strength in each isoill2r Tie tcp C- lll-~ dc shyr cndencc [rom -lO Oe to J(ne lJ1cJ ilf (L n l~ jc ) i nr cn e-shy

i) ( sur e to a i 1- a [ t h ) b ( v~ c i I ltl r J c l e r i t i v il r e (l J 0 r c shypo rted St rong dispcrsion 0- the diclcctric cnS~(lnt i t 11 b 0 l l1 [ r c C1 L e n c y a 11 d t cr~ per ) t u r c j soh c r 1 n cI j n cral1s(CII) hu t no t in cis-CII)x I()( f rcCI(rlc d (shypcncience i s (llso found in the reverse biiJS iilj) ( dltll1ce I

Schottky bdrriers bctmiddotecn II lnd li fht ly-d op c tlltlHshy

(el l ) Thce dat~ iJlbc (iscusseJ in lcrrlS o f vilri ow

rlociels hich have been proi)(c cl for Ll l e tril1l s porl proj crties of scmiconuucting po lyncrs

t

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111 Jn C ~I 0 I I)

bull~-cle y

Volume 25 Number 3 March 1980

PROGRAM OF THE 1980 MARCH MEETING IN NEW YORK NY 24-28 MAR H 1980

Published for the American Physical Society by the American Institute of Physics

notonically with decr~as~ng te~pcratur~ bu t its t erature dependence 1S 1nCO~S~tent ~lth a simple

r aw or act iva td conduc t 1 V y r is n powe 1t field dependence for Hlt200 De and even in

~ ~ est fields attainable ther~ ~s no evidence for a superconducting phase trans1t10n

uppor ted by NSF Grant DMR79-00830

AD 10 ~ AlICe Raman Spectroscopy of (Ji B ann t 1ans Po lyshy

ac tr lCll bull LS LICnJ1ANN amp OB FITCHEN Cornell U Illuca V __ Resonant Raman s~ectra of cis and ~ (Of) at 71( for laser excltatLon wave lengths throughout t il i ible spectrum are pres ented These have been conshyye rted t xcitation profiles for the r esonantly-enhanced ca rbon carbon vibrations o f both isomers The re is I r l e aDhanc~nt of cis (CH) Raman lines with waveshyCntths ne2 T 600nmcorrC5ponalng to the ~Iectronic abshyegt rptloo t t his pOint In trans (CH l l lne s hapes and

o~c l aJon profiles are used to deducex

the form of the ~ strlbution of conjugati on lengths using simple models

scatte ring from a l inear conjugated molecule of Ie lengths Variations in lineshapes and excitashy~files and hence of thi s distribution with syoshy

lC proc ure film morphology isomeri za t ion proceshyeta 0 or dopi ng of (Hl are pre ent ed an

_III l of informar~ n proVlc d on t he rat ure on-limI t i ng bonding defect The ariee t

4 ~tl In producing i somerization of cis (CH) films I~ can5 i dered In addition the first teporfed

o f poly(deuteratecl acetyl ene) (CD)x are

rk pported in pa~ by the NSF

AB U Fbotoconductivity and Optical Absorption in tranlmiddot reN X S ETEMAD M OZAKI D L PEEBLES A J lpoundpoundGER and A G MAC DLARMID U of Pennmiddot eyl a PlUla PA - - Detailed measurements of ph otDconducti vi ty and optical absorption in trans-(CH)x bay beeD ca r ried out The photo c urrent (Iph ) as a 1JJ)c OD of elle rgy shows an edge near 1 3 eV with an loC f 0 ot nearly two orders of magnitude The higher UlrrJY ~lion is characte rized by a slower variation JPh lncre~e by only about a factor of ten on varying 1 photon energy from 15 eV to 3 a eV Similar strucshytun bull ob orYod in detailed measurements of the absorpshy

oa codQctent The photocurrent has a weak tail at low cnr bullbull conaitent with smearing of the band edge andlo th pral1lce o~ localized states in the gap The results

U IN oh=u d in tenns of the band structure of ~-pol~cetylene

Ull Low raguancy AC Impedance Studies of

Dop4 Diy oaty1e ne C K CHIANG and D maLIR National Burea 1 of Standards ~1Qw CreqlllJlcy ac impedance measurements

re ua~ to Btudy the inhomogeneous elecshytr1ct popor tiea of lure and doped polyaceshycyl bullbull rtIo depression of the impedance

~r of doped polymer suggested that the ric 1 resiatvity can be separated into

F rt the ~istance due to polymer bull bull and the r esistance due to various

~anit1ea These resistances were bull uSt In tAr1Ia of dopant concentration U1d

ra~ ~e doping uniformity waS also reClacte4 in the frequency distribution of the laoipedance spectrWll

An 13 Ucrowave Dielectric Constant and Conductivity or LowDenl ry Polyacetylene A FELDBLUM A J HpoundECER A G MAC DLARMID U of Pennsylvania

162

Phila PA and G E WNEK J C W CHIEN and F KARASZ U of Massachusetts Amherst MA -shy

S ample s of polyacetyhpe in th e onn 0 a 10 -clen5i t y foam-like mate rial were synthesized by using a gel as an intermediate step Sample densities were in the range

3of 1 - bull 03 g I cm bull The mic rowave dielectric cons tant and conductivity were measured as a function of Iodine doping in the range of low dopant ~oncentration (CHI ) y = 005- 03) using both standing-wave techniques y x (single point impedance two point impedance and semishyfinite sample approximation) and cavity perturbation techniques Both the dielectric constant and conductivity were found to b e reduced fr om the corresponding va lues found for as-grown (CH)x film The results wi ll be disshycussed in the context of effective medium theory

AB 14 Sp e cific Heats of Pure and Doped Polyacetylene D MOSES A DENENSTEIN A PRON A J HEEGER and A G MAC DLARMID U of Pennsylvania P hila FA -- The t e mperature dependences (08 K lt T lt 7 K) of the specific heats of pure polyacetylene (both cis and trans isomers) and heavily doped metallic [CH(AsF b ~Jx

l will be reported The principal motivation of this work w a tu C t e -r~i n t l h ~ c~ct f chJ -ir- ~1 (1 tL t ro m a nd latti ce p rope rti eb o (CH) Th rcs lt i n h e d oped polymer indicate an electronic contribution to C(T) as well as a dramatic change i n the lattice contribution The electronic density of sta t e s inier r e r om th e l inear term is in agreement with that obtained from suscepti shybility Comparison of results from c is and tra ns starting material indicates isomerization during doPi~

AB 15 Junction and Dielectric Characteristics of (CHl W D GILL P M GRANT J MAREK T TANI T e eLARK~ and G B STREET IBM Research Lab San Jose CA 95193-shyWe report the results of our studies on the frequency dependence of the Schottky barrier properties and di shyelectric response function of undoped and lightly-doped trana- and c is- ( CH) in the range 100Hz to 10MHz and in addition measur~ments of the static dielectric breakdown strength in each i s omer The temperature deshypendence from -lOOC to 100e aod ageing behavior on exshyposure to air of the sbove characteristics are also reshyported Strong dispersion of the dielectric constan~ with both frequency and temperature is observed in trans (CH)x but not in cis-(CH)x A large frequency deshypendence is also found in the reverse bias impedance of S~hottky barriers b~tween In and lightly-doped transshy(CH)x These data will be discussed in terms of various models which have been proposed for the transport propshyerties of semiconducting polymers

AB 16 Photovoltaic Studies of Polyacetylene Heteroshyjunctions D L PEEBLES M OZAKI B R WEINshyBERGER A J HEEGER and A G MAC DLARMlD U of Pennsylvania Phila PA -- Experiments with (CH)xCdS heterojunctions extend the previous wo rk with (CHlxZnS devices The shape of the photo response specshytrum and the absolute quantum efficiency below 24 eV are similar The heterojunction diodes have Rs ~ 200 III cm and exhibit a photoresponse time of less than O I second Devices can be made either by synthesizing (CH)x directly onto the CdS Or by pressing a free standing film onto the cleaved surface C-V measurements imply an acceptor concentration of about 10 s cm3 in the as grown (CHl The quantum efficiency is greater for more heavilyx doped CdS in agreement with estimates of the expected increase of the depletion layer in the (CH)~ This implies that the fibrous (CHlx material can be treated as an effe c tive homogeneous medium

I se Mo

ISE UF Me

AE Ra r E tlltlJlshyUni 010 p~ BE-ee praquoQi nc( ana

l ~l

C

bull~-cle y

Volume 25 Number 3 March 1980

PROGRAM OF THE 1980 MARCH MEETING IN NEW YORK NY 24-28 MAR H 1980

Published for the American Physical Society by the American Institute of Physics

notonically with decr~as~ng te~pcratur~ bu t its t erature dependence 1S 1nCO~S~tent ~lth a simple

r aw or act iva td conduc t 1 V y r is n powe 1t field dependence for Hlt200 De and even in

~ ~ est fields attainable ther~ ~s no evidence for a superconducting phase trans1t10n

uppor ted by NSF Grant DMR79-00830

AD 10 ~ AlICe Raman Spectroscopy of (Ji B ann t 1ans Po lyshy

ac tr lCll bull LS LICnJ1ANN amp OB FITCHEN Cornell U Illuca V __ Resonant Raman s~ectra of cis and ~ (Of) at 71( for laser excltatLon wave lengths throughout t il i ible spectrum are pres ented These have been conshyye rted t xcitation profiles for the r esonantly-enhanced ca rbon carbon vibrations o f both isomers The re is I r l e aDhanc~nt of cis (CH) Raman lines with waveshyCntths ne2 T 600nmcorrC5ponalng to the ~Iectronic abshyegt rptloo t t his pOint In trans (CH l l lne s hapes and

o~c l aJon profiles are used to deducex

the form of the ~ strlbution of conjugati on lengths using simple models

scatte ring from a l inear conjugated molecule of Ie lengths Variations in lineshapes and excitashy~files and hence of thi s distribution with syoshy

lC proc ure film morphology isomeri za t ion proceshyeta 0 or dopi ng of (Hl are pre ent ed an

_III l of informar~ n proVlc d on t he rat ure on-limI t i ng bonding defect The ariee t

4 ~tl In producing i somerization of cis (CH) films I~ can5 i dered In addition the first teporfed

o f poly(deuteratecl acetyl ene) (CD)x are

rk pported in pa~ by the NSF

AB U Fbotoconductivity and Optical Absorption in tranlmiddot reN X S ETEMAD M OZAKI D L PEEBLES A J lpoundpoundGER and A G MAC DLARMID U of Pennmiddot eyl a PlUla PA - - Detailed measurements of ph otDconducti vi ty and optical absorption in trans-(CH)x bay beeD ca r ried out The photo c urrent (Iph ) as a 1JJ)c OD of elle rgy shows an edge near 1 3 eV with an loC f 0 ot nearly two orders of magnitude The higher UlrrJY ~lion is characte rized by a slower variation JPh lncre~e by only about a factor of ten on varying 1 photon energy from 15 eV to 3 a eV Similar strucshytun bull ob orYod in detailed measurements of the absorpshy

oa codQctent The photocurrent has a weak tail at low cnr bullbull conaitent with smearing of the band edge andlo th pral1lce o~ localized states in the gap The results

U IN oh=u d in tenns of the band structure of ~-pol~cetylene

Ull Low raguancy AC Impedance Studies of

Dop4 Diy oaty1e ne C K CHIANG and D maLIR National Burea 1 of Standards ~1Qw CreqlllJlcy ac impedance measurements

re ua~ to Btudy the inhomogeneous elecshytr1ct popor tiea of lure and doped polyaceshycyl bullbull rtIo depression of the impedance

~r of doped polymer suggested that the ric 1 resiatvity can be separated into

F rt the ~istance due to polymer bull bull and the r esistance due to various

~anit1ea These resistances were bull uSt In tAr1Ia of dopant concentration U1d

ra~ ~e doping uniformity waS also reClacte4 in the frequency distribution of the laoipedance spectrWll

An 13 Ucrowave Dielectric Constant and Conductivity or LowDenl ry Polyacetylene A FELDBLUM A J HpoundECER A G MAC DLARMID U of Pennsylvania

162

Phila PA and G E WNEK J C W CHIEN and F KARASZ U of Massachusetts Amherst MA -shy

S ample s of polyacetyhpe in th e onn 0 a 10 -clen5i t y foam-like mate rial were synthesized by using a gel as an intermediate step Sample densities were in the range

3of 1 - bull 03 g I cm bull The mic rowave dielectric cons tant and conductivity were measured as a function of Iodine doping in the range of low dopant ~oncentration (CHI ) y = 005- 03) using both standing-wave techniques y x (single point impedance two point impedance and semishyfinite sample approximation) and cavity perturbation techniques Both the dielectric constant and conductivity were found to b e reduced fr om the corresponding va lues found for as-grown (CH)x film The results wi ll be disshycussed in the context of effective medium theory

AB 14 Sp e cific Heats of Pure and Doped Polyacetylene D MOSES A DENENSTEIN A PRON A J HEEGER and A G MAC DLARMID U of Pennsylvania P hila FA -- The t e mperature dependences (08 K lt T lt 7 K) of the specific heats of pure polyacetylene (both cis and trans isomers) and heavily doped metallic [CH(AsF b ~Jx

l will be reported The principal motivation of this work w a tu C t e -r~i n t l h ~ c~ct f chJ -ir- ~1 (1 tL t ro m a nd latti ce p rope rti eb o (CH) Th rcs lt i n h e d oped polymer indicate an electronic contribution to C(T) as well as a dramatic change i n the lattice contribution The electronic density of sta t e s inier r e r om th e l inear term is in agreement with that obtained from suscepti shybility Comparison of results from c is and tra ns starting material indicates isomerization during doPi~

AB 15 Junction and Dielectric Characteristics of (CHl W D GILL P M GRANT J MAREK T TANI T e eLARK~ and G B STREET IBM Research Lab San Jose CA 95193-shyWe report the results of our studies on the frequency dependence of the Schottky barrier properties and di shyelectric response function of undoped and lightly-doped trana- and c is- ( CH) in the range 100Hz to 10MHz and in addition measur~ments of the static dielectric breakdown strength in each i s omer The temperature deshypendence from -lOOC to 100e aod ageing behavior on exshyposure to air of the sbove characteristics are also reshyported Strong dispersion of the dielectric constan~ with both frequency and temperature is observed in trans (CH)x but not in cis-(CH)x A large frequency deshypendence is also found in the reverse bias impedance of S~hottky barriers b~tween In and lightly-doped transshy(CH)x These data will be discussed in terms of various models which have been proposed for the transport propshyerties of semiconducting polymers

AB 16 Photovoltaic Studies of Polyacetylene Heteroshyjunctions D L PEEBLES M OZAKI B R WEINshyBERGER A J HEEGER and A G MAC DLARMlD U of Pennsylvania Phila PA -- Experiments with (CH)xCdS heterojunctions extend the previous wo rk with (CHlxZnS devices The shape of the photo response specshytrum and the absolute quantum efficiency below 24 eV are similar The heterojunction diodes have Rs ~ 200 III cm and exhibit a photoresponse time of less than O I second Devices can be made either by synthesizing (CH)x directly onto the CdS Or by pressing a free standing film onto the cleaved surface C-V measurements imply an acceptor concentration of about 10 s cm3 in the as grown (CHl The quantum efficiency is greater for more heavilyx doped CdS in agreement with estimates of the expected increase of the depletion layer in the (CH)~ This implies that the fibrous (CHlx material can be treated as an effe c tive homogeneous medium

I se Mo

ISE UF Me

AE Ra r E tlltlJlshyUni 010 p~ BE-ee praquoQi nc( ana

l ~l

C

notonically with decr~as~ng te~pcratur~ bu t its t erature dependence 1S 1nCO~S~tent ~lth a simple

r aw or act iva td conduc t 1 V y r is n powe 1t field dependence for Hlt200 De and even in

~ ~ est fields attainable ther~ ~s no evidence for a superconducting phase trans1t10n

uppor ted by NSF Grant DMR79-00830

AD 10 ~ AlICe Raman Spectroscopy of (Ji B ann t 1ans Po lyshy

ac tr lCll bull LS LICnJ1ANN amp OB FITCHEN Cornell U Illuca V __ Resonant Raman s~ectra of cis and ~ (Of) at 71( for laser excltatLon wave lengths throughout t il i ible spectrum are pres ented These have been conshyye rted t xcitation profiles for the r esonantly-enhanced ca rbon carbon vibrations o f both isomers The re is I r l e aDhanc~nt of cis (CH) Raman lines with waveshyCntths ne2 T 600nmcorrC5ponalng to the ~Iectronic abshyegt rptloo t t his pOint In trans (CH l l lne s hapes and

o~c l aJon profiles are used to deducex

the form of the ~ strlbution of conjugati on lengths using simple models

scatte ring from a l inear conjugated molecule of Ie lengths Variations in lineshapes and excitashy~files and hence of thi s distribution with syoshy

lC proc ure film morphology isomeri za t ion proceshyeta 0 or dopi ng of (Hl are pre ent ed an

_III l of informar~ n proVlc d on t he rat ure on-limI t i ng bonding defect The ariee t

4 ~tl In producing i somerization of cis (CH) films I~ can5 i dered In addition the first teporfed

o f poly(deuteratecl acetyl ene) (CD)x are

rk pported in pa~ by the NSF

AB U Fbotoconductivity and Optical Absorption in tranlmiddot reN X S ETEMAD M OZAKI D L PEEBLES A J lpoundpoundGER and A G MAC DLARMID U of Pennmiddot eyl a PlUla PA - - Detailed measurements of ph otDconducti vi ty and optical absorption in trans-(CH)x bay beeD ca r ried out The photo c urrent (Iph ) as a 1JJ)c OD of elle rgy shows an edge near 1 3 eV with an loC f 0 ot nearly two orders of magnitude The higher UlrrJY ~lion is characte rized by a slower variation JPh lncre~e by only about a factor of ten on varying 1 photon energy from 15 eV to 3 a eV Similar strucshytun bull ob orYod in detailed measurements of the absorpshy

oa codQctent The photocurrent has a weak tail at low cnr bullbull conaitent with smearing of the band edge andlo th pral1lce o~ localized states in the gap The results

U IN oh=u d in tenns of the band structure of ~-pol~cetylene

Ull Low raguancy AC Impedance Studies of

Dop4 Diy oaty1e ne C K CHIANG and D maLIR National Burea 1 of Standards ~1Qw CreqlllJlcy ac impedance measurements

re ua~ to Btudy the inhomogeneous elecshytr1ct popor tiea of lure and doped polyaceshycyl bullbull rtIo depression of the impedance

~r of doped polymer suggested that the ric 1 resiatvity can be separated into

F rt the ~istance due to polymer bull bull and the r esistance due to various

~anit1ea These resistances were bull uSt In tAr1Ia of dopant concentration U1d

ra~ ~e doping uniformity waS also reClacte4 in the frequency distribution of the laoipedance spectrWll

An 13 Ucrowave Dielectric Constant and Conductivity or LowDenl ry Polyacetylene A FELDBLUM A J HpoundECER A G MAC DLARMID U of Pennsylvania

162

Phila PA and G E WNEK J C W CHIEN and F KARASZ U of Massachusetts Amherst MA -shy

S ample s of polyacetyhpe in th e onn 0 a 10 -clen5i t y foam-like mate rial were synthesized by using a gel as an intermediate step Sample densities were in the range

3of 1 - bull 03 g I cm bull The mic rowave dielectric cons tant and conductivity were measured as a function of Iodine doping in the range of low dopant ~oncentration (CHI ) y = 005- 03) using both standing-wave techniques y x (single point impedance two point impedance and semishyfinite sample approximation) and cavity perturbation techniques Both the dielectric constant and conductivity were found to b e reduced fr om the corresponding va lues found for as-grown (CH)x film The results wi ll be disshycussed in the context of effective medium theory

AB 14 Sp e cific Heats of Pure and Doped Polyacetylene D MOSES A DENENSTEIN A PRON A J HEEGER and A G MAC DLARMID U of Pennsylvania P hila FA -- The t e mperature dependences (08 K lt T lt 7 K) of the specific heats of pure polyacetylene (both cis and trans isomers) and heavily doped metallic [CH(AsF b ~Jx

l will be reported The principal motivation of this work w a tu C t e -r~i n t l h ~ c~ct f chJ -ir- ~1 (1 tL t ro m a nd latti ce p rope rti eb o (CH) Th rcs lt i n h e d oped polymer indicate an electronic contribution to C(T) as well as a dramatic change i n the lattice contribution The electronic density of sta t e s inier r e r om th e l inear term is in agreement with that obtained from suscepti shybility Comparison of results from c is and tra ns starting material indicates isomerization during doPi~

AB 15 Junction and Dielectric Characteristics of (CHl W D GILL P M GRANT J MAREK T TANI T e eLARK~ and G B STREET IBM Research Lab San Jose CA 95193-shyWe report the results of our studies on the frequency dependence of the Schottky barrier properties and di shyelectric response function of undoped and lightly-doped trana- and c is- ( CH) in the range 100Hz to 10MHz and in addition measur~ments of the static dielectric breakdown strength in each i s omer The temperature deshypendence from -lOOC to 100e aod ageing behavior on exshyposure to air of the sbove characteristics are also reshyported Strong dispersion of the dielectric constan~ with both frequency and temperature is observed in trans (CH)x but not in cis-(CH)x A large frequency deshypendence is also found in the reverse bias impedance of S~hottky barriers b~tween In and lightly-doped transshy(CH)x These data will be discussed in terms of various models which have been proposed for the transport propshyerties of semiconducting polymers

AB 16 Photovoltaic Studies of Polyacetylene Heteroshyjunctions D L PEEBLES M OZAKI B R WEINshyBERGER A J HEEGER and A G MAC DLARMlD U of Pennsylvania Phila PA -- Experiments with (CH)xCdS heterojunctions extend the previous wo rk with (CHlxZnS devices The shape of the photo response specshytrum and the absolute quantum efficiency below 24 eV are similar The heterojunction diodes have Rs ~ 200 III cm and exhibit a photoresponse time of less than O I second Devices can be made either by synthesizing (CH)x directly onto the CdS Or by pressing a free standing film onto the cleaved surface C-V measurements imply an acceptor concentration of about 10 s cm3 in the as grown (CHl The quantum efficiency is greater for more heavilyx doped CdS in agreement with estimates of the expected increase of the depletion layer in the (CH)~ This implies that the fibrous (CHlx material can be treated as an effe c tive homogeneous medium

I se Mo

ISE UF Me

AE Ra r E tlltlJlshyUni 010 p~ BE-ee praquoQi nc( ana

l ~l

C

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