OptiMOS™ and StrongIRFET™ combined portfolio20 V–300 V N-channel Power MOSFETs

www.infineon.com/powermosfet-20V-300V

Infineon’s semiconductors are designed to bring more efficiency, power density and cost effectiveness. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing.

Power MOSFETs 20 V-300 V - OptiMOS™ and StrongIRFET™ familiesInfineon’s highly innovative OptiMOS™ and StrongIRFET™ families consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. OptiMOS™ is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle).

A powerful combinationBenefits › Expanded product portfolio 20 V–300 V

› Able to address a broad range of needs

› Best-in-class technology → OptiMOS™

OptiMOS™ – optimized for high frequency and Low RDS(on) applications StrongIRFET™ – optimized for low frequency and high rugged applications

OptiMOS™ Power MOSFETs provide excellent best-in-class performance. Features include ultra low RDS(on) as well as low charge for high switching frequency applications. StrongIRFET™ Power MOSFETs are designed for rugged industrial applications and are ideal for designs with a low switching frequency as well as those that require a high current carrying capability.

OptiMOS™ family attributes StrongIRFET™ family attributes

Family attributes overview

Designed for high performance applications

Primarily aimed at replacing Trench Power MOSFETs

Provide best-in-class and price/performance products

Ideal for high switching frequency Industry best figure of merit

Ultra low RDS(on) 20 V–300 V portfolio High efficiency and power density

Designed for industrial applications

Primarily aimed at replacing planar Power MOSFETs

Provide value in traditional Trench MOSFET space

Ideal for low switching frequency High current carrying capability

Low RDS(on)

3.0 Threshold voltageLogic Level also available Rugged Silicon

Published byInfineon Technologies Austria AG9500 Villach, Austria

© 2015 Infineon Technologies AG.All Rights Reserved.

Order Number: B111-I0163-V1-7600-EU-EC-PDate: 08 / 2015

Please note!THIS DOCUMENT IS FOR INFORMATION PURPOSES ONLY AND ANY INFORMATION GIVEN HEREIN SHALL IN NO EVENT BE REGARDED AS A WARRANTY, GUARANTEE OR DESCRIPTION OF ANY FUNCTIONALITY, CONDITIONS AND/OR QUALITY OF OUR PRODUCTS OR ANY SUITABILITY FOR A PARTICULAR PURPOSE. WITH REGARD TO THE TECHNICAL SPECIFICATIONS OF OUR PRODUCTS, WE KINDLY ASK YOU TO REFER TO THE RELEVANT PRODUCT DATA SHEETS PROVIDED BY US. OUR CUSTOMERS AND THEIR TECHNICAL DEPARTMENTS ARE REQUIRED TO EVALUATE THE SUITABILITY OF OUR PRODUCTS FOR THE INTENDED APPLICATION.

WE RESERVE THE RIGHT TO CHANGE THIS DOCUMENT AND/OR THE INFORMATION GIVEN HEREIN AT ANY TIME.

Additional informationFor further information on technologies, our products, the application of our products, delivery terms and conditions and/or prices please contact your nearest Infineon Technologies office (www.infineon.com).

WarningsDue to technical requirements, our products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office.

Except as otherwise explicitly approved by us in a written document signed by authorized repre-sentatives of Infineon Technologies, our products may not be used in any life endangering applica-tions, including but not limited to medical, nuclear, military, life critical or any other applications where a failure of the product or any consequences of the use thereof can result in personal injury.

OptiMOS™ and StrongIRFET™

OptiMOS™ and StrongIRFET™

A powerful combination

Infineon’s semiconductors are designed to bring more efficiency,

power density and cost effectiveness. The full range of OptiMOS™

and StrongIRFET™ N-channel Power MOSFETs enable innovation

and performance in applications such as switch mode power

supplies (SMPS), motor control and drives, inverters and computing.

Power MOSFETs 20 V-300 V

OptiMOS™ and StrongIRFET™ families

Infineon’s highly innovative OptiMOS™ and StrongIRFET™ families

consistently meet the highest quality and performance demands

in key specifications for power system design such as on-state

resistance and figure of merit characteristics. OptiMOS™ is the

market leader in highly efficient solutions for power generation

(e.g. solar micro inverter), power supply (e.g. server and telecom)

and power consumption (e.g. electric vehicle).

www.silica.com/infineon

OptiMOS™ and StrongIRFET™ combined portfolio20 V – 300 V N-channel Power MOSFETs

Technology Power

Benefits

• Expanded product portfolio 20 V–300 V

• Able to address a broad range of needs

• Best-in-class technology -> OptiMOS™

OptiMOS™ – optimized for high frequency and Low RDS(on) applications

StrongIRFET™ – optimized for low frequency and high rugged applications

Family attributes overview

OptiMOS™ Power MOSFETs provide excellent best-in-class performance. Features include ultra low RDS(on) as well as low charge for

high switching frequency applications. StrongIRFET™ Power MOSFETs are designed for rugged industrial applications and are ideal

for designs with a low switching frequency as well as those that require a high current carrying capability.

Product family positioning

These graphs show the recommended technology for best fit standard components, price performance and differentiated products

according to switching frequency.

For low frequency applications, OptiMOS™ 5 is the best fit when best-in-class performance is required. However, StrongIRFET™ is

recommended for 20 V to 75 V applications when best-in-class performance is not essential and cost is a more significant consideration.

For best-in-class performance at voltages from 80 V to 150 V, OptiMOS™ 5 is recommended.

If best-in-class is not essential and price/performance is more important, then OptiMOS™ 3 is the recommendation.

Voltages above 150 V are available in OptiMOS™ 3. In addition, older Trench MOSFETs, shown here as HEXFET™, are an option for

highly commoditized markets where cost is the main consideration.

For high frequency applications, OptiMOS™ 5 is recommended for best-in-class and price/performance up to 150 V. OptiMOS™ 3 can

be considered where high performance is less essential. As with low frequency applications, OptiMOS™ 3 is available for voltages

above 150 V.

Designed for high performance applications

Designed for industrial applications

Ideal for high switching frequency

Ideal for low switching frequency

Ultra low RDS(on) Low RDS(on)20 V–300 V portfolio3.0 Threshold voltage

Logic Level also available

Primarily aimed at replacing Trench Power

MOSFETs

Primarily aimed at replacing planar Power

MOSFETs

Provide best-in-class and price/performance

products

Provide value in traditional Trench

MOSFET space

Industry best figure of merit

High current carrying capability

High efficiency and power density

Rugged Silicon

OptiMOS™ family attributes StrongIRFET™ family attributes

StrongIRFET™20 V–75 V

OptiMOS™ 580 V–150 V

OptiMOS™ 380 V–150 V

OptiMOS™ 3200 V–300 V

HEXFET™ 80 V–300 V

Best-in-class OptiMOS™ 5 20 V–150 V

OptiMOS™ 3200 V–300 V

Best-in-class OptiMOS™ 5 20 V–150 V

OptiMOS™ 520 V–150 V

OptiMOS™ 320 V–150 V

Low frequency applications < 100 kHz High frequency applications > 100 kHz

Differentiated products

Differentiated products

Price performance

Price performance

„Best fit“ standard

components

„Best fit“ standard

components

20 V 20 V300 V 300 V80 VBreakdown voltage

80 VBreakdown voltage

Packages – Surface Mount Devices Technology

20 V–80 V

D²PAK 7pin D²PAK 7pinD²PAK 7pin TO-247 TO-247 TO-247

D²PAK D²PAKD²PAK TO-220 TO-220 TO-220

TO-Leadless TO-LeadlessTO-Leadless TO-220 FullPAK TO-220 FullPAK TO-220 FullPAK

DPAK DPAKDPAK I²PAK I²PAK I²PAK

DirectFET™ DirectFET™DirectFET™

SuperSO8 SuperSO8SuperSO8

SO-8 SO-8SO-8

PQFN 2x2

PQFN 3.3x3.3 PQFN 3.3x3.3PQFN 3.3x3.3

20 V–80 V100 V–150 V 100 V–150 V200 V–300 V 200 V–300 V

Packages – Through Hole Devices Technology

2 www.silica.com/infineon

Combined portfolio

Infineon’s OptiMOS™ portfolio, now complemented by StrongIRFET™ Power MOSFETs, creates a truly powerful combination. The joint

portfolio, covering 20 V up to 300 V MOSFETs, can address a broad range of needs from low to high switching frequencies. The tables

below provide a guidance overview for the recommended OptiMOS™ or StrongIRFET™ products for each major sub-application and

voltage class.

Packages available by voltage class

Drives

Inverters

Legend

SMPS

300 V

40 60 75–8020–30

40 60 75–8020–30

60 75–80 100 150 200

60 75–80 100

40 60 75–8020–30

40 60 75–8020–30

40 60 75–8020–30

40 60 75–8020–30

40 60 75–8020–30

40 60 75–8020–30

40 60 75–80

Breakdown voltage

100

40 60 75–80 100

40 60 75–80 100

40 60 75–80 100

40 60

40 60

60 75–80 100

60 75–80 100

40 60 75–80

40 60 75–80

75–80 100 150 200

75–80 100

40 60 75–80 100 15020–30

40 60 75–80 10020–30

Breakdown voltage

60 75–80 100 150

60 75–80 100

40 60 75–80 100 150 200 250 30020–30

40 60 75–80 10020–30

40 60

40 60

Breakdown voltage

OptiMOS™ BVDSS

StrongIRFET™ BVDSS

Family

Recommended

Breakdown voltage

Recommended

Available

Available

Packages – Surface Mount Devices Technology

20 V–80 V

D²PAK 7pin D²PAK 7pinD²PAK 7pin TO-247 TO-247 TO-247

D²PAK D²PAKD²PAK TO-220 TO-220 TO-220

TO-Leadless TO-LeadlessTO-Leadless TO-220 FullPAK TO-220 FullPAK TO-220 FullPAK

DPAK DPAKDPAK I²PAK I²PAK I²PAK

DirectFET™ DirectFET™DirectFET™

SuperSO8 SuperSO8SuperSO8

SO-8 SO-8SO-8

PQFN 2x2

PQFN 3.3x3.3 PQFN 3.3x3.3PQFN 3.3x3.3

20 V–80 V100 V–150 V 100 V–150 V200 V–300 V 200 V–300 V

Packages – Through Hole Devices Technology

3www.silica.com/infineon

The combined portfolio covers a broad range of packages. Shown

here are the packages available by voltage class range. Please

note, not all packages are available in each voltage class. For

new products, there will be a consolidation of package names.

CanPAK™, S308 and PQFN 5x6 will be named DirectFET™, PQFN

3.3x3.3 and SuperSO8 respectively in the future.

All trademarks and logos are the property of their respective owners. This document provides a brief overview only, no binding offers are intended. Avnet disclaims all representations, warranties and liabilities under any theory with respect to the product information, including any implied warranties of merchantability, fitness for a particular purpose, title and/or non-infringement, specifications, use, legal compliance or other requirements. Product information is obtained by Avnet from its suppliers or other sources deemed reliable and is provided by Avnet on an ”AS IS“ basis. No guarantee as to the accuracy or completeness of any information. All information is subject to change, modifications and amendments without notice.

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