Optical Modulator Development at Partow …...Results For MZI Modulators • V π.L as low as 4 V-cm...
Transcript of Optical Modulator Development at Partow …...Results For MZI Modulators • V π.L as low as 4 V-cm...
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Optical Modulator Development at Partow Technologies LLC
CEO: Payam RabieiPartow Technologies LLC, Vista, CA
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Company introduction
• Currently Partow is developing various optical modulators based on its bonded lithium niobate thin film technology.
• We have a phase II SBIR award from DOE and a phase I SBIR award from NASA.
• Our goal is to commercialize thin film based lithium niobatemodulators for data communication, analog photonics, and photonic sensing applications
• Relocated to California in 2016• Have access to state of art nanofabrication facility at UCSD
and UC Irvine
Propitiatory, for government review onlyPartow Technologies LLC
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History
• The company started in Oct 2012 by Dr. Payam Rabiei and Prof. Sasan Fathpour at CREOL at University of Central Florida
• Received a first SBIR funding in 2014• Currently employs two full time staff as well as
contractors and part time staff
Partow Technologies LLC Propitiatory, for government review only
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Technical Summary
• Room Temperature wafer bonding• Lithium niobate thin film substrates• Optical modulator projects
Propitiatory, for government review onlyPartow Technologies LLC
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Room Temperature wafer bonding
• Home designed and made high vacuum room temperature wafer bonding system
• Uses plasma surface activation and wafer press in high vacuum to bond dissimilar materials at room temperature
Propitiatory, for government review onlyPartow Technologies LLC
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Very strong bond strength
-1
-0.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 2 4 6 8 10 12 14 16 18
Bond
stre
ngth
(J/m
2)
Activation Time (s)
Wafer Type A
Wafer Type B
Wafer Type C
Linear (Wafer Type A)
Linear (Wafer Type B)
Linear (Wafer Type B)Silicon surface energy
Propitiatory, for government review onlyPartow Technologies LLC
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Room Temperature wafer bonding
• Applications – Advanced photonic substrates– Advanced MEMS substrates– Wafer level vacuum packaging– Transparent bonding for various optical applications
• Features– Universal wafer to wafer bonding– No thermal stress (can bond dissimilar substrates)– No high force required ( i.e. can be used for bonding
fragile substrates such as III-V semiconductors)
Propitiatory, for government review onlyPartow Technologies LLC
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Advanced substrates
i) Ion implantation
LiNbO3 Silicon
SiO2
ii) SiO2 deposition on Si substrate
iii) Wafer bondingiv) Heating
~2000 nm
~600 nm
LiNbO3
Silicon
SiO2
Silicon
SiO2
LiNbO3
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Thin film LN on Si substrates
X-cut LiNbO3 SiPartow Technologies LLC Propitiatory, for government review only
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Advanced substrates
• Low loss optical quality thin films using in house bonding capability
• Possibility of bonding on a variety of different substrates.
• Almost universal and can be applied to create waveguide quality thin films on any flat substrate
Propitiatory, for government review onlyPartow Technologies LLC
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Thick film substrates
• Used to achieve 5 microns and thicker LN layers by mechanical thinning methods
i) Wafer bonding ii) Thinning
~2000 nm
>6um
LiNbO3
Silicon
SiO2
Silicon
SiO2
Propitiatory, for government review onlyPartow Technologies LLC
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Customers for wafer bonding
• Ultrasonic transducer manufacturers• X-ray detector manufacturers• Several federal research institutes in US• Several universities performing research in
MEMS, Optics, and a variety of other fields
Propitiatory, for government review onlyPartow Technologies LLC
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Chalcogenide loaded LN device
Si
LiNbO3
SiO2
ChG
Si
LiNbO3
SiO2
Mask (SiO2)
ChG
i) ChG deposition ii) SiO2 mask e-beam lithography
Si
LiNbO3
SiO2
iii) ChG etching Passivation
ChGBCB
• Chalcogenide glass can achieve lower losses• Index is matched to lithium niobate
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Ring resonators based on CHG on LN
• Q is as high as 1.3× 105
• Loss as low as 1.2 dB/cm
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Modulator electrode design LN
• Using high contrast waveguide electrodes can be placed closer
• -> Lower Vp
electrodes
Slab: LiNbO3
Ridge: Ta2O5
Cladding: SiO2
Si
SiO2
SiO2
y-cut LiNbO3E
z
y
VTa2O5
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Results For MZI Modulators
• Vπ.L as low as 4 V-cm is obtained
• Calculation shows Vπ.Las low as 2 V-cm is possible
-0.5 0 0.50
10
20
Pow
er (µ
W)
-0.5 0 0.5-10
0
10
Time (msec)
Vol
tage
(Vol
t)
Ta2O5
SiO2
LiNbO3Si
Au
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High speed testing setup
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High Speed MZI Characterization
• Modulator functioning up to several GHz
• The 8GHz drop in measurement due to detector
• Optical bandwidth >8GHz
• Some issues remain with non flat response to be addressed in phase II
2 4 6 8 10-16
-12
-8
-4
0
4
S 21 (d
B)
Modulation frequency (GHz)
Electrode transmission Optical response
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Grating coupling
• Low Loss couplers are needed to make a complete device
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Coupler measurement
• -6dB /coupler loss measured on LN samples with BCB cladding
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Low loss GC development
• Optimized grating coupler design achieved 3dB loss from the LN high index waveguide to single mode fiber
• An integrated micro-mirror for fiber couplingg
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DC drift problem
• Modulators with above design drift quickly over time• DC drift is eliminated by etching into the LN thin
films.
Propitiatory, for government review onlyPartow Technologies LLC