ON Semiconductor

ON Semiconductor

Q304

BU Contact (AP) : Analog Product : KH Ho / Manson Chan

Marketing Manager, Analog BU, Asia Pacific

Integrated Power : WK Liew / Winnie Chen / Kenneth NG Marketing Manager, IPDD BU, Asia Pacific

Baseband(DSP, MCU & Memory)

ON Solutions for Cellular Phones

Duple

xer

RF/IF

RF Detector

FET

RFModulation

Synthesizer

Receiver

PA Driver

Display

Flash Light

LED Driver

Power Management

DC-DCBuckBoost

ChargePump

LDO

VoltageDetector

Driver /Load Switch

uP ResetSupervisory

PM ASIC

AudioAmplifier

USB & SIMInterface

Battery Management

Charger Control

Li-Ion Protection

NiMHd/NiCdProtection

PassElements

Power Conversion

Wall Charge Adapter

Car ChargeAdapter

Analog Switches

Standard Producs

Physical Interface

Microphone

Handset/Receiver

Vibrator

Smart /SIM Card

TVS

Filter

PA

MiniGateTM Logic

ON Portfolio Products

Package Roadmap

USBInterface

Baseband(DSP, MCU & Memory)

Baseband(DSP, MCU & Memory)Battery

Charger

Inner Battery Charger

ResetController

LDO(RF)SIM CardInterface

DC/DCConverter

Li-io

nB

atteryL

i-ion

Battery

SIM/ SMART Card

LDO(Baseband)

RFRF

PA controller

NCP4523,MC78PCNCP4561,

MC33761/2

NCP500, 511(150mA); NCP512 (80mA)

MC33765 (5 outputs)

NCP1501NCP1510/1MBRM120

NCP300~5MAX809/810

BatteryPack

NCP802NTQD6968

NCP1800NTHD4P02NTHD3101

(or NTGS3441T1+MBRM120LT3) NCN6000

NCN6010

Over-voltageProtection IC

NCP345/6

White LEDDriver

NCP5007NCP1403

MBR0520LT1

VibratorDrivers

NCP5426MDC3105NUD3105

Audio Ampfor Speaker

& PolyphonicRingerNCP2890NCP4894NCP4896

* (Black) Analog products * (Blue) Integrated Power (TVS, Filter, Driver, MOSFET)• (Green) Standard Components• (Italic) New products

ON Solutions for Cellular Phones

MC33170

RF Power DetectorNCS5000

MicroIntegrationTM

TVS array Driver

SMS05/15/24SM12

NZQA5V6MSQA6V1NSQA6V81PMT16A

SMS05/12/24CSMF05/12/24C

MUN seriesDTA seriesDTC seriesMDC3105

Filter

NZF220DFNZF220TTSTF202-22

NZMM7V0T4NUF6105

Mini-gate Logic Analog Switch

NLAS4599NLAS44599NLAS4501

NLAS323/4/5

MC74VHC1GxxMC74HC1Gxx

NL17SZxxNL27WZxx

Small signal

MBRM120MBR0520

MMBT35200NSR15WT1

Stereo AudioAmp for

MP3 HeadsetNCP2809

MOSFET

NTGS3441/3NTHS2101NTJD4105NTR4101

ESD Response Comparison between ON Semi, Varistors & Competitor安森美半导体、变阻器和竞争者的 ESD 响应比较

Conversion Factor:转换因子：V = “X “ / [(2/267)*(0.1)*(0.5)]V = 7.98KV

Condition 1: Applied 8kV ESD contact pulse using a high frequency test board (Low inductance, ideal case).状况 1 ：使用高频测试板施加 8kV ESD 接触脉冲 ( 低电感，理想状况 ) 。

Input: 8KV ESD Pulse, IEC 61000-4-2输入： 8KV ESD 脉冲， IEC 61000-4-2

Output: Varistor, VA-C1005-5R5E输出：变阻器， VA-C1005-5R5E

Output: ON Semiconductor, MSQA6V1输出：安森美半导体， MSQA6V1

Output: Competition, SMF05输出：竞争者， SMF05

5V/div

High clamping Voltage (35V)高钳位电压 (35V)

5V/div

Low clamping Voltage (7V)低钳位电压 (7V)

5V/div

Clamping Voltage (8V)钳位电压 (8V)

5V/div

Better response evenwith the effect ofparasitic (V=Ldi/dt)即使有寄生效应 (V=Ldi/dt)也有较好的响应

Condition 2: Applied 8kV ESD contact pulse using a normal test board (Inductance =10nH, real board case)状况 2 ：使用正常测试板施加 8kV ESD 接触脉冲 ( 电感 =10nH ，真实状况 ) 。

Conversion Factor:转换因子：V = “X “ / [(2/267)*(0.1)*(0.5)]V = 7.98KV



Output: ON Semiconductor, MSQA6V1输出：安森美， MSQA6V1 Output: Competition, SMF05 输出：竞争者，

5V/div

High clamping Voltage (40V)高钳位电压 (40V)

5V/div

Bad response dueto the parasitic effect (V=Ldi/dt)寄生效应 (V=Ldi/dt)造成响应变差

ESD Response Comparison between ON Semi, Varistors & Competitor安森美半导体、变阻器和竞争者的 ESD 响应比较

IEC 61000-4-2 ESD pulses are very fast rise time (between 0.7 and 1nsec) IEC 61000-4-2 ESD 脉冲的上升时间很快 ( 在 0.7 和 1nsec 之间 )

ESD Response time Comparison between ON Semi, and Varistors 安森美半导体和变阻器的 ESD 响应时间比较


Output: ON Semiconductor, MSQA6V1输出：安森美， MSQA6V1


Response timemeasured from 10% to 90% of the peak Voltage 15 nsec从峰值电压 10% 到 90% 测量的响应时间： 15 nsec

Response timemeasured from 10% to 90% of the peak Voltage 10 nsec从峰值电压 10% 到 90% 测量的响应时间： 10 nsec

Test condition: 测试条件：Applied 8kV ESD contact pulse using a high frequency test board (Low inductance, ideal case).使用高频测试板施加 8kV ESD 接触脉冲 ( 低电感，理想状况 ) 。

Package Size Comparison封装尺寸比较

On Semiconductor SC88(2 x 2 x 1)

安森美半导体 SC88

On Semiconductor SOT-563(1.6 x 1.6 x 0.60)

安森美半导体 SOT-563

Varistor(3.2 x 1.6 x 0.9)

变阻器

尺寸英寸毫米

尺寸英寸毫米

Conclusion结论

15nS10nSResponse Time响应时间

Lifetime寿命 / Price

360pF90pFCapacitance电容

0.900.55Height Profile高度

3.2 x 1.61.6 x 1.6Foot Print占用面积

4uA0.04uALeakage漏电

20V11VSurge浪涌

35V7VClamping voltage

Varistor变阻器

ON Semiconductor(MSQA6V1)

安森美半导体

ESD Conclusion

• IC’s must be protected because most of them cannot withstand ESD conditions higher than 2kV.

• ON Semiconductor devices showed the best performance to suppress ESD pulses generated by the IEC 61000-4-2 ESD standard.

• PCB lay-out is critical to improve ESD protection and reduce the parasitic effects (V=Ldi/dt).

• Varistors do not offer an effective ESD protection because their clamping voltage is too high. They cannot be used for protection in high speed data lines either because of their high capacitance.

• Semtech’s devices are more sensitive to board parasitic effects, which could be due to higher package’s inductance.

TVSTVS - Dual / Multi-Line Array ProtectionDevice: Package: Circuit:

SL05 Series

SOT23

SM05 Series

MMBZ5V6ALT1 Series

MMBZ15VDLT1

MMBZ27VCLT1

SMS05 Series SC74

MMQA5V6LT1 Series

DF6A6.8FU SC88

NUP6101 Micro8

Device: Package: Circuit:

MSQA6V1W5T1

SMF05T1

NSQA6V8AW5T2 (7pF)

SC88A

NZQA5V6,6V2,6V8XV5T1

NZQA5V6AXV5T1(20pF)

NZQA6V8AXV5T1 (15pF)

SOT553

NUP4104XV6T1

SOT563

NUP4102XV6T1 (15pF)

NUP5102XV6T1

SMF05C, 12C , 24C SC88

SMS05C, 12C, 24C SC74

Smallest package (1.6x1.6mm)

NZQA5V6XV5T1; NZQA6V2XV5T1; NZQA6V8XV5T1; NZQA8V2XV5T1;

NZQA5V6AXV5T1; NZQA6V8AXV5T1;

MSQA6V1W5T2; SMF05T1; NSQA6V8AW5T2 4 Uni-Directional ESD Protection Packages: SC-88A (for MSQA, SMF05, NSQA)

SOT-553 (for NZQA series)

Benefits: Integrated Solution Increase Reliability & Quality Saving Board Space Low Capacitance (as low as 12pF typical

for NZQA6V8A and NSQA6V8A)

SMF05C; NUP5102VX6 5 Uni-Directional ESD Protection Packages: SC-88 ( SMF05C)

SOT-563 (NUP5102)

IC t

o be

Pro

tect

edIC

to

be

Pro

tect

ed

Bottom Connector

SIM Card Interface

NUP4101FCT1; NUP4102XV6T1 4 Bi–Directional ESD Protection Low Capacitance ( <10pF @ 3V) Package:

NUP4101FCT1: Flip-ChipNUP4102VX6T1: SOT-563

Benefits:ESD Immunity as per IEC61000-4-2 Level 4Low Capacitance for fast data rateLow PCB area (51 x 51 mil for NUP4101FCT1)

NZQA6V8AXV5T1; NSQA6V8AW5T2 4 Unidirectional Array for Protection Low Capacitance ( <7pF @ 3V) Package: NZQA6V8AXV5T1: SOT-553 NSQA6V8AW5T2: SC-88A

OR

VccSIMDATA

SIMCLK

SIMRST

NZQA6V8AXV5T1 MSQA6V1W5T2

VccSIMDATA

SIMCLK

SIMRST

NUP4101FCT1 NUP4102VX6T1

USB, SIM, SMART Card InterfaceUSB, SIM, SMART Card InterfaceType Device Function Features Package Status

NCN6010 Low Power Level Shifter w/DC-DC Converter GSM 11.11 compliant, supports 5/3V cards TSSOP 14 NOW

NCN6011 Low Power Level Shifter GSM 11.11 compliant, supports 5/3V cards Micro 10 NOW

NUP1301ML3 ESD Protection USB1.1 & 2.0, 1 Line SOT-23 NOW

SL05T1 ESD Protection USB1.1 & 2.0, 1 Line SOT-23 NOW

LC03-6R2 ESD Protection USB1.1, 2 Lines SO-8 NOW

NUP2201MR6T1 ESD Protection USB1.1 & 2.0, 2 Lines TSOP-6 NOW

NUP2301MW6T1 ESD Protection USB1.1 & 2.0, 2 Lines SC-88 NOW

SRDA05-4R2 ESD Protection USB1.1, 4 Lines SO-8 NOW

NUP4201DR2 ESD Protection USB1.1 & 2.0, 4 Lines SO-8 NOW

NUP4201MR6 ESD Protection USB1.1 & 2.0, 4 Lines TSOP-6 NOW

NUP4301MR6 ESD Protection USB1.1 & 2.0, 4 Lines TSOP-6 NOW

NUF2101W1T1 Downstream filter with TVS USB1.1, 2 Lines SC-88 NOW

STF202-22T1 Upstream filter with TVS USB1.1, 2 Lines TSOP-6 NOW

NUF2221W1T2 Upstream filter with TVS USB1.1, 2 Lines SC-88 NOW

MBRM120/130LT1 Schottky Rectifier Low VF Powermite NOW

MBRM110LT1 Schottky Rectifier Low 10Volts, Low VF Powermite NOW

SC-88,SC-75 NOW

SOT-553 1Q03

SOT-353/SC-88A NOW

SOT-553/SOT-656 1Q03

SOT-353/SC-88A NOW

SOT-553/SOT-656 1Q03

MICRO- INTEGRATION

ANALOG

MC74HC1Gxx

Bias Resistor Transistors

MC74VHC1Gxx Control Logic High Speed, Low PD

DISCRETE COMPONENTS

STANDARD LOGIC

Switching NPN or PNP, Dual or Single

Control Logic High Speed, Low PD

See complete MicroIntegration portfolio

Device Description MARKET StatusMC33560 Sync. & Async.Single SAM interface Point of Sales Terminals A

NCN6000 Async. Single SAM interface Point of Sales Terminals A

NCN6004A Async. & Sync. Dual SAM interface Point of Sales Terminals S

NCN6001 Async. & Sync.Single SAM interface with SPI Point of Sales Terminals S

NCN6010 Level Shifter for SIM interface & Charge-pump Mobile Phone ANCN6011 Level Shifter for SIM interface Mobile Phone A

Device Description MARKET StatusMC33560 Sync. & Async.Single SAM interface Point of Sales Terminals A

NCN6000 Async. Single SAM interface Point of Sales Terminals A

NCN6004A Async. & Sync. Dual SAM interface Point of Sales Terminals S

NCN6001 Async. & Sync.Single SAM interface with SPI Point of Sales Terminals S

NCN6010 Level Shifter for SIM interface & Charge-pump Mobile Phone ANCN6011 Level Shifter for SIM interface Mobile Phone A

USB & SIM Card InterfaceUSB & SIM Card Interface – USB Portfolio for ESD Protection

USB 1.1I/O Lines

+VBus

USB 2 Lines(1 Port)

4 Lines(2 Port)

1 Lines(1/2 Port)

SL05SL05 SRDA05-4

NUP2201MR6

NUP4301MR6NUP2301MW6NUP1301ML3

LC03-6

USB 2.0I/O Lines

+VBus

USB I/O Lines

IntroducedIntroduced

Under DevelopUnder

Develop

ProposalProposal

USB1.1USB1.1

NUP4201MR6

NUP4201DR2

USB2.0USB2.0


SL05 Series

SOT23

LC03-6

NUP4201

SO8


NUP4301D TSOP6

NUP2301D SC88

TVS Array for USB ApplicationTVS Array for USB ApplicationLow capacitance series <5pF ,for USB 2.0 and high speed I/O

TVSTVS – Protection for high Speed Data Line

USB2.0

USB2.0

USB1.1USB2.0

USB2.0

USB & SIM Card InterfaceUSB & SIM Card Interface – USB Portfolio for ESD/EMI Filter

USB 1.1ESD

(I/O Lines)+

VBus

+EMI

(Filter)

Upstream FilterDownstream Filter

NUF2101MW6

USB 2.0

NUF2101

NUF2101XV6

NUF2221W1T2

STF202

NUF2221XV6

Seeking market partnershipRequire Common Mode Choke

(Detail on next page)

IntroducedIntroduced

Under DevelopUnder

Develop

ProposalProposal

USB Interface

NUF2221 & STF202

Peripheral (Upstream)

NUF4107FCin1

in2

in3

out1

out2

out3

GND

Vbus

Vbus

D1

D2

D3

NUF2221W1T2; STF202-222 Line Termination, EMI Filtering and ESD Protection for Upstream USB PortIntegrated Pull-up Resistor

VCC Protected by Integrated Clamping DiodePackage: SC-88 (for NUF2221)

TSOP-6 (for STF202)NUF4107FCT1

4 Channel EMI Filtering with ESD Protection for Data LinesUSB 1.1 Filtering Provided with Speed DetectionFlip-Chip Package

Benefits: IEC61000-4-2 Level 4, ESD Protection Small PCB space Up to 27 discrete components replaced

Vcc

D4out4in4

USB D-

USB D+ In+

In-

out+

out-

ESD/EMI filter in Handset Applications

LCD Display Operating Voltage: 3.0 to 4.0 Volts Clock speed: 13 to 20 MHz # of data lines: 20 to 24 lines

SIM and MMC Interface Operating Voltage: 2.7- 5Volts Clock speed: 13 to 34 MHz # of data lines: 3 or 4 lines

Bottom Connector /USB1.1 Interface Operating Voltage: 2.7- 5Volts # of data lines: 10 to 20 lines

Key Pad Operating Voltage: 2.7- 3Volts # of data lines: 16 to 24 lines

Microphone /SpeakerOperating Voltage: 3.0 to 5.0 Volts # of lines: 3 to 4 lines ESD Protection/EMI Filtering

Mega Pixel Camera/Flash Modules Operating Voltage: 2.5 to 3.0 Volts Clock speed: 27 MHz # of data lines: 16 to 24 lines

How EMI filter functions

10 MHz Clock for DC signal line

Performance Comparison Between Discrete and Integrated Filters

Frequency

100KHz 1.0MHz 10MHz 100MHz 1.0GHz 10GHz20*LOG10(2*V(R-Receiver:1))

-80

-60

-40

-20

-0

Discrete Pi-Filter

Sharp Rise Smooth Rise

C1

0

R1

C2

L1, parasitic

1

2

Ground parasiticL1 > 2.8nH usually

Integrated Pi-Filter

0

R1

L2, parasitic

1

2

NZF22OTT1

Reduced parasiticL2 < 0.5nH

• Reduced package parasitic for better roll-off frequency response.

• Tighter tolerances for integrated components.

• Integrated ESD protection.

• Significant PCB space savings for optimized designs.

Frequency

100KHz 1.0MHz 10MHz 100MHz 1.0GHz 10GHz20*LOG10(2*V(R-Receiver:1))

-60

-40

-20

-0

Advantages of ON Semi’s integrated Filters versus discrete filters

Summary : Protection Devices With Filter

Device: Package Circuit:

NUF2113FC

NUF2114FC

Flip Chip

NUF2222FC Flip Chip

NUF4105FCNUF4115FC

Flip Chip

NUF4107FC Flip Chip


NUF3101FC Flip Chip

NUF6105FC

NUF6115FC

NUF6106FC (12pf@3V, low cap

[email protected])

Flip Chip

NUF8101FC Flip Chip

NUF9001FC Flip Chip

Summary :Protection Devices With FilterDevice: Package: Circuit:

LC03-6

SO8

SRDA05-4

NUF2101M SC59-6

NUF2441H ChipFET

NUF4401MN QFN 2x2


STF202 TSOP6

NUF2221W1 SC88

NZF220DF SC88A

NZF220T SC75

NZMM7V0T4 24 MLF

Audio/ Speaker Line

NUF2441FCT1(Available Jun’04)EMI Filter with ESD ProtectionInductors Integrated 3.5nH Low Resistance 0.32ohm IntegratedPackage: ChipFET & Flip-Chip

Benefits: Ui-Directional EMI Filtering Low Power

Loss by Integrated Inductors Replace 12 discrete components ESD Immunity as per IEC61000-4-2 Level

4

Speaker

Audio processing and conversion

AD

Speaker


A

D

OR

OR

NUF2113FCT1(Available Q2’04)EMI Filter with ESD ProtectionLow Resistance 10ohm IntegratedPackage: Flip-Chip

Benefits: Bi-Directional EMI Filtering Prevents Noise from

Entering/Leaving the System Low Power Loss by Integrated Low Resistance Replace 14 discrete components ESD Immunity as per IEC61000-4-2 Level 4

OR

Headset (Speaker + Microphone)

NUF2114FCT1EMI Filter with ESD ProtectionIntegrated SolutionPackage: Flip-Chip

Benefits: Bi-Directional EMI Filtering Prevents Noise from

Entering/Leaving the System Low Power Loss by Integrated Low Resistance Replace 14 discrete components ESD Immunity as per IEC61000-4-2 Level 4


A

D

NMF3501FC & NMF3502FC-75dB @ 80MHz -1GHz-60dB @ 1GHz – 2GHzTwo-stage Integrates Filter for Microphone Inputs with Resistors for Biasing, and ESD ProtectionPackage: Flip-Chip

Benefits: Low PCB area (1.2 x 1.7 mm2) Very thin package (0.65mm) Replace 30 discrete components ESD suppression on both input and output

pins (IEC61000-4-2 Level 4)

Microphone


A

DNMF3501FC NMF3501FC

Stage-1 Stage-2

Audio Line

NZMM7V0T4

9 EMI/RFI Bi-Directional “Pi” Low Pass Filter

4 x 4 mm Lead Less MLF Surface Mount Package

Replace 30 discrete components

Package: 24 PIN MLF

NZF220DFT1

Dual EMI/RFI Bi–directional “Pi” Low–Pass Filters

Package: SC-88A

NZF220TT1

Single EMI/RFI Bi–directional “Pi” Low–Pass Filters

Package: SC-75

ON’s FilterCPU

I1

I2

I3

I7

I8

I9

O1O2

O8O9

O3

O7

Benefits: Suppresses EMI/RFI Noise in Systems Subjected

to Electromagnetic Interference Small Package Size Minimizes Parasitic

Inductance, Thus a More “Ideal” Low Pass Filtering Response

Keypad

Bottom Connector

NUF4105FCT1; NUF6105FCT1; NUF6106FCT1([email protected])4 & 6 Channel EMI Pi-Filter with ESD ProtectionTwo Bump Sizes Available

– 300m(PB) for NUF4105FC and NUF6105FC– 350m(PB-free) for NUF4115FC and NUF6115FC

Package: Flip-Chip

Benefits: Low PCB area Reduced components count Wide freq. range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange

NUF9001FCT1G10 Channel EMI Pi-Filter with ESD ProtectionTwo Bump Sizes Available

– 300m & 350mPackage: Flip-Chip

Benefits: Low PCB area (2.6mm x 2.6mm) Reduced components countLow line capacitance for high data rate exchange

NUF9001FC

Con

trol

ler

NUF6105/6106NUF4105

Con

trol

ler

NUF4105FCT1; NUF6105FCT1; NUF4115FC; NUF6115FC4 & 6 Channel EMI Pi-Filter with ESD ProtectionTwo Bump Sizes Available

– 300m for NUF4105FC and NUF6105FC– 350m for NUF4115FC and NUF6115FC

Package: Flip-Chip


NUF9101FCT110 Channel EMI Pi-Filter with ESD ProtectionTwo Bump Sizes Available

– 300m & 350mPackage: Flip-Chip

Benefits: Low PCB area (2.6mm x 2.6mm) Reduced components countLow line capacitance for high data rate exchange

CP

U

NUF6105/15

NUF4105/15

CP

U

NUF9101FC

LCD Display

LCD Display

NUF4105FCT1; NUF6105FCT1; NUF6106FCT1 (20pF@ 2.5V)4 & 6 Channel EMI Pi-Filter with ESD ProtectionTwo Bump Sizes Available

– 300m for NUF4105FC and NUF6105FC– 350m for NUF4115FC and NUF6115FC

Package: Flip-Chip


NUF4401 or NUF4402

NUF4105/15

NUF4401MNT1,NUF4402,NUF8401 (Available Jul’04)4 and 8 Channel EMI Pi-Filter with ESD Protection100/200 Ohms line resistor design for LCD applicationPackage: NUF4401: 2X2mm QFN package NUF4402: 1.6X1.6mm QFN packageNUF8401: 1.6X4.0mm QFN package

Con

trol

ler

NUF8401

Con

trol

ler

Mega pixel Camera Interface

NUF6106FCT1 (21pF@ 2.5V)6 Channel EMI Pi-Filter with ESD ProtectionLow Capacitance ([email protected]) for Mega pixel/ high speed dataline Package: Flip-Chip


CP

U

NUF6106FC

CA

ME

RA

Vcc

SIMDATA

SIMCLK

SIMRST

in1

in2

in3

out1

out2

out3

NUF3101FCT1

SIM Card Interface

NUF3101FCT1(Available in Jun 04) Integrated Filter with ESD Protection 3 channels are dedicated to data lines and 1

channel is for the supply voltage Package: Flip Chip (1.6X1.6mm)

Multimedia Card Interface

NUF4105FCNUF4115FC

in1

in2

in3

out1

out2

out3GND

Vcc

Vcc

MMCDATA

MMCCLK

MMCCMD

NZMM7V0T49 EMI Bi-Directional “PI” Low Pass FilterPackage: 24 PIN MLF

NUF4105FCT1; NUF4115FC4 Channel EMI Pi-Filter Array for Data Lines with ESD Protection

Two Bump Sizes Available

– 300m for NUF4105FCT1– 350m for NUF4115FC

Package: Flip-Chip

Benefits: Low PCB area Reduced components count Wide frequency range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange

Benefits: Low PCB area Reduced components count Low parasitic inductance, providing a more ideal low pass filtering response

Multimedia Card Interface

NUF3101FC

in1

in2

in3

out1

out2

out3GND

Vcc

Vcc

MMCDATA

MMCCLK

MMCCMD

Benefits: Low PCB area Reduced components count Wide frequency range rejection

-30dB @ 800mHz - 1GH-25dB @1GHz – 2GHz

Low line capacitance, 20pF typical, for high data rate exchange

NUF3101FCT1 Integrated Filter with ESD

Protection 3 channels are dedicated to data

lines and 1 channel is for the supply voltage

Package: Flip Chip @ 300um

NUF3101FCT1 Integrated Filter with ESD Protection 3 channels are dedicated to data lines and 1

channel is for the supply voltage Package: Flip Chip

Vcc

SIMDATA

SIMCLK

SIMRST

in1

in2

in3

out1

out2

out3

NUF3101FCT1

SIM Card Interface

Benefits: Low PCB area Reduced components count Wide frequency range rejection -35dB from 800MHz to 2.2GHz Low line capacitance for high data rate exchange

NUF9001FCT1 –10 channel EMI filter

DescriptionThis device is a 10 line EMI filter array for wireless applications. Greater than -35 dB attenuation is obtained at frequencies from 800 MHz to 2.2 GHz. It also offers ESD protection – clamping transients from static discharges. ESD protection is provided across all capacitors.

Features EMI Filtering and ESD Protection 10 line in Flipchip Moisture Sensitivity Level 1

Schedule Phase 0 approved Approved Engineering Sample Now Production Now

Applications•Wireless Phones•Handheld Products•LCD Displays

NUF9001FCT1

NUF6106FCt1 –Low capacitance 6 channel EMI filter for high speed

NUF6106FCT1

Importance of the parasitic inductance

RS

C

LS

C = 33 pFRs = 0.4 -40

-35

-30

-25

-20

-15

-10

-5

0

10 100 1000 10000

F (MHz)

S2

1 (

dB

)

Ls = 900 pH

Ls = 500 pH

Ls = 100 pH

Lower parasitic inductance enable broadband filtering Equivalent circuit of discrete capacitor

QFN/DFN MicroLeadless

800 pH 500 pH 100 pH 50 pH

Discrete capacitor

Leaded package

Flip chip bumped die

NUF4402 4 Channel filter Smallest 4 line filter Sample available : NOW Production schedule: Aug 04

NUF8401• 8- line EMI filter • 1st 8 line filter in DFN package• Sample available : Aug 04• Production schedule: Sep 04 CMD 8 line Flip chip (1.5X4.0mm)

NUF4401• 4 Channel filter • Standard 8 leaded QFN pacakage• Sample available: NOW• Production schedule: Aug 04

NUF4402• 4 Channel filter • Smallest 4 line filter in QFN

package• Sample available : Aug 04• Production schedule: Sep 04

NEW Products

NUF8401 NUF4401 NUF4402

1.6 X4.0mm

2.0 X2.0mm1.6 X1.6mm

PROS and CONS (QFN versus Flipchips)

QFN package Better Reliability and robust package

Better ESD rating and handling capability

All pins accessible after board mounted for debugging or trouble shooting for design engineers

Better Filter characteristics than Flip-chip or CSP

50% Less parasitic Inductance than Flip-chip or CSP

Increase chip mount density (400um chip to chip separation)

Competitive Pricing

Importance of the parasitic inductance

RS

C

LS

C = 33 pFRs = 0.4 -40

-35

-30

-25

-20

-15

-10

-5

0

10 100 1000 10000

F (MHz)

S2

1 (

dB

)

Ls = 900 pH

Ls = 500 pH

Ls = 100 pH

Lower parasitic inductance enable broadband filtering

Equivalent circuit of discrete capacitor

Pin to Pin Compatibility

Flip chip or BGA (1.33X 3.0mm)

DFN package (1.35X3.0mm)

The DFN package• Pin to Pin replacement• Compatible Foot print • Same Case size Related Part# areNUF6401 and NUF6402

Benchmarking

EMIF10-LCD01F1 EMIF10- COM1 NUF9001FCT1 Unit Remarks

VBR 8 8 7 V IR=10mA

IR500 500 100 nA

Leakage Current @ VR = 3 V

R I/O 100 200 200 Ω

Capacitance 35 45 45 pF Line Capacitance

100 MHz -6dB -12dB -12dB

200 MHz -10dB -17dB -17dB

300 MHz -14dB -22dB -22dB

900 MHz -25dB -35dB -35dB

1800 MHz -27dB -37dB -37dB

Channel 10 10 10

ESD Standard IEC61000-4-2 Air Discharge +-15KVIEC61000-4-2 Contact Discharge +-8KV

Package FilpChip FilpChip FilpChip

PCB area 2.6*2.6mm hight=0.6mm 2.6*2.6mm hight=0.6mm 2.6*2.6mm hight=0.6mm

Ball side

• The driver is activated with + logic voltage/current.

• The driver controls the coil of the relay.

• The integrated Zener diodes protect the FET from the inductor’s kick back when it is deactivated.

• The relay controls the power lines through its contacts.

ON Semi’s device

VCC

uP

VDD

Relay/Motor

Ch1 – VGS

Ch2 – ID

Ch3 - VDS

Vibrator : Vibrator : Integrated Inductance Load Driver

SOT-23

NUD3105/MDC3105Inductive Load Driver

Description NUD3105 is a MicroIntegration™ device designed to provide a robust driver interface between sensitive control circuits and inductive DC loads. It is optimized to drive relays and other loads from a 3V to 5V rail, and can drive relay coils up to 2.5 watts at 5V.

Benefits Efficient and easy interface to control logic Reliable, robust performance Replaces 3 to 6 discrete devices; saves board space Eliminates the need for a separate diode across the load No need to prevent this possibility with extra components

Applications Telecom line cards, modems, fax, answer machines Vibrator driver for cell phones and pagers Desktop computers, peripherals, copiers Consumer electronics, set top boxes Small appliances, white goods Security systems, ATE Solenoid driver Automotive relays, motor controls, lamp drivers

Features Low input drive current Back-to-front transient isolation is inherent Single package integration Integrated free-wheeling diode Guaranteed OFF state if input connection is lost

More Information Online See http://www.onsemi.com/

– Datasheet: NUD3105/D– Case outline– Samples

Ordering Information NUD3105LT1 SOT23 3kU/reel

SOT-23 NUD3105 – MOSFET Drive MDC3105 – Bipolar Drive

Replace 5 discrete!

Power Devices Focus Area

30 1400200-250 600 80060 100 500 900

5

20

15

10

25

30

35

>40

Cellular phone

Handheld productsDC-DC converter,Notebook PC

PC Motherboard

VRM

Automotive powerSteering

DC 48V input DC-DC converter,Color monitor image correction switch

OA equiments,Automotive parts (motor solenoid

driver,DC12-24V

input DC-DC)

Back-up Power Supply

Inverter for Lighting

AC adapter(Notebook, Portable

VCD,DVD)

AC200V power supply

Color monitor(high voltage circuit)

AC100V SMPS

Drain Current (A)

VDS (V)

Focus area

• HD3E & HD3E-RP (1-60V): • Low voltage planar technology: Figure of Merit equals Low RDS(ON) verses low

gate charge. Best for quick switching applications.低压平面技术：特性为低 RDS(ON) 和低栅极电荷。最适合快速开关应用

• TRENCH (1-30V): 沟道 (1-30V)

• Low voltage trench technology: Figure of Merit equal Low RDS(ON) verses die size. Best for lowest RDS(ON) applications.低电压沟道技术：特性为低 RDS(ON) 和小芯片尺寸。最适合低 RDS(ON) 的应用

• HD-Plus (1-250V): • Low and Medium voltage planar technology: Combines the use of MOSFET cells

with poly resistors, capacitors, diodes and logic MOSFETs. Create simple analog circuits. For smart discretes.低压中压平面技术：把 MOSFET 单元和聚酯电阻，电容，二极管和逻辑MOSFET 相结合。建立简单的模拟电路。高性能分立元件。

Power Products Processes功率产品工艺

MOS Power Process Roadmap

1Q02 2Q031Q032Q02 3Q02 4Q02 3Q03 4Q03

Pro

du

ct P

ort

folio

s

Market Segments

Trench 30 V N/P Ch • Computing

Trench 20V N-Ch • Portable & Battery

Trench

HD3E - 20 to 30 V, N & P Ch •Portables/Wireless•Computing

HD Plus

Trench

•Automotive•Computing

TMOS 7 - 40 to 250V, N & P Ch •Automotive•Computing

•Portable & Wireless

•Portable & Wireless

8V P-Channel

20V P-Channel

ProductionQ1 RTM

Development

0

0.5

1

1.5

2

2.5

3

10 100 1000

Cell Density (MCells / in2)

Eff

ec

tiv

e C

ha

nn

el D

en

sit

y (

um

/ u

m2

)

Square Stripe

Figure 1

ON Semi

Competitors Today

World Class Performance using Square Cell

Competitorsrecent

announcements

We offer the industry’s leading RDS(ON) because we have highesteffective channel density

New MOSFET in TSOP6/SOT23 Package

Maximum Ratings

Part VDS VGS ID Type

Number (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)SOT23

* NTR4502PT1 -30 ±20 0.350 0.175 - 1.95

* NTR4101P -20 ±8 0.050 0.060 0.800 2.40

* NTR2101P -8 ±8 0.050 0.065 0.100 3.50

* NTR4503N 30 ±20 0.140 - - 2.50

* NTR4103N 20 ±8 0.040 0.050 0.120 2.40

NTR4501N 20 ±8 0.080 0.100 0.140 2.40TSOP6 SINGLE

* NTGS4111P -20 ±8 0.040 0.050 0.120 3.20

* NTGS2101P -8 ±8 0.026 0.035 0.046 5.60p-

p-

n-

* Trench

TSOP-63.0 X 3.0 mm

SOT-233.0 X 3.0 mm

MOSFET in SC75/SC89/SOT563 Package

Maximum Ratings


Number Package (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)SINGLE

* NTA4151P SC75 -20 ±8 0.800 1.200 1.800 0.30

* NTE4151P SC89 -20 ±8 0.800 1.200 1.800 0.30

* NTZS3151P SOT563 -20 ±8 0.175 0.240 0.300 0.77

* NTA4153N SC75 20 ±8 0.600 0.700 1.000 0.50

* NTE4153N SC89 20 ±8 0.600 0.700 1.000 0.50

* NTZS3154P SOT563 20 ±8 0.400 0.700 1.000 0.67

NTA4001N SC75 20 ±8 3.000 3.500 - 0.50DUAL

* NTZD3152P SOT563 -20 ±8 0.750 1.000 1.500 0.60COMPLEMENTARY

-20 ±8 0.600 1.000 1.500 0.40 p-

20 ±8 0.400 0.700 1.000 0.40 n-

p-

SOT563* NTZD3155C

p-

n-

* Trench

SC-751.6 X 1.6

mm

SC-891.6 X 1.6

mm

SOT-5631.6 X 1.6

mm

MOSFET in SC88 PackageMaximum Ratings


Number Package (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)SINGLE

* NTJ S4151P SC88 -20 ±12 0.110 0.145 0.200 0.80

* NTS4101P SC70 -20 ±12 0.400 0.450 0.650 0.80

* NTJ S3151P SC88 -12 ±8 0.060 0.090 0.160 0.92

* NTS2101P SC70 -8 ±8 0.230 0.315 0.400 0.92

NTS4001N SC70 30 ±20 1.200 2.200 4.000 0.50 n-DUAL

* NTJ D4152P SC88 -20 ±8 0.260 0.500 1.000 1.00

* NTJ D2152P SC88 -8 ±8 0.300 0.460 0.900 0.78

NTJ D4001N SC88 30 ±20 1.400 2.600 - 0.25

NTJ D4401N SC88 20 ±12 0.375 0.440 - 0.63COMPLEMENTARY

-8 ±8 0.300 0.400 0.600 0.40 p-

20 ±12 0.385 0.630 - 0.40 n-LOAD SWITCH

-8 ±8 0.300 0.400 0.600 0.40 p-

20 n-

p-

SC88

* NTJ D1155L SC88

* NTJ D4105C

p-

n-

* Trench

SC-882.0 X 2.0 mm

SC-702.0 X 2.0 mm

MOS POWER New Products in ChipFET PackageMaximum Ratings

Part VDS VGS RDS(on) () ID Type

Number (V) (V) VGS= 10V VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)

SINGLE

* NTHS2101P -8 ±8 - 0.025 0.036 0.048 5.4

* NTHS4101P -20 ±8 - 0.034 0.040 0.052 6.7

NTHS5441 -20 ±12 - 0.055 0.083 - 5.3

NTHS5443 -20 ±12 - 0.065 0.110 - 4.7

* NTHS4111P -30 ±20 - 0.042 0.070 - TBD

NTHS4501N 30 ±20 0.035 0.055 - - 6.7

NTHS5404 20 ±12 - 0.030 0.045 - 7.2DUAL

* NTHD2102P -8 ±8 - 0.058 0.085 0.160 3.4

* NTHD4102P -20 ±8 - 0.095 0.135 0.210 2.8

* NTHD4401P -20 ±12 - 0.155 0.240 - 3.0

NTHD4502N 30 ±20 0.085 0.143 - - 3.9

NTHD4508N 20 ±12 - 0.075 0.143 - 4.2COMPLEMENTARY

20 - 0.095 0.135 0.210 2.8 p--20 - 0.080 0.115 - 3.1 n-20 - 0.155 0.260 - 2.1 p--20 - 0.080 0.115 - 3.1 n-

FETKY

* NTHD3101F -20 ±12 - 0.095 0.135 0.210 2.8 p-

NTHD4P02F -20 ±12 - 0.155 0.260 - 2.1 p-

NTHD4N02F 20 ±12 - 0.080 0.115 - 3.1 n-

p-

NTHC5513 ±12

n-

n-

p-

* NTHD3100C ±12

* Trench

New MOSFET in Flip-chip Package

Maximum Ratings


Number (V) (V) VGS= 4.5V VGS= 2.5V VGS= 1.8V (A)FLIP-CHIP BGA

* NTVS4101P -20 ±12 0.065 0.095 - 4.50

* NTVS4111P -20 ±8 0.021 0.024 - 5.50p-

* Trench

Flip Chip1.6 X 1.6 mm2.0 X 2.4 mm

RTM on Q1 05

SSM3J13T SI3441DV NTGS3441 NTHS5441 Unit Remarks

VDS

-12V -20 -20 -20 VDrain-Source voltage

VGSS

±8 ±8 ±12 ±12 VGate-Source voltage

ID

-3.0 -3.3 -2.2 -3.9 A Drain current (DC)

RDS(ON)

VGS= -4V70 100 90 46 mΩ Max

VGS= -2.5V 95 135 120 83 mΩ max

Package SOT23 TSOP-6 TSOP-6 ChipFET

Size 3mmx3mm hight 1mm

3mmx3mm hight 1mm

3mmx3mm hight 1mm

3mmx1.8mm hight 1mm

Pin out

1.Size reduction 1/3

2.More Drain Pin easy layout

SI5443 NTHS5443T1 SI8405 NTVS4101P Unit Remarks

VDS

-20 -20 -12 -20 VDrain-Source voltage

VGSS

±12 ±12 ±8 ±12 VGate-Source voltage

ID

-4.9 -4.9 -3.6 -3.9 A Drain current (DC)

RDS(ON)

VGS= -4.5V65 65 55 52 mΩ Max

VGS= -2.5V110 110 70 72 mΩ Max

PackageChipFET TSOP-6 Micro Foot FilpChip

The same package

Size 3.0mmx1.8mm hight 1.0mm

3mmx3mm hight 1mm

1.6mmx1.6mm hight 0.6mm

1.6mmx1.6mm hight 0.6mm

Pin out

Pin to Pin

Small Outline Packages – SOT23, SC70Package Channel VDSS Vishay AOS Farichild IR ONSOT23 N 30V Si2316DS AO3410 FDN372S IRLML2803 NTR4503N

0.085 0.033 0.050 0.400 0.140

20V Si2314EDS AO3416 FDN339AN IRLML2502 NTR4103N0.033 0.022 0.035 0.045 0.040

P 30V Si2343DS AO3401 FDN360P IRLML5203 NTR4502P0.086 0.065 0.125 0.165 0.350

20V Si2323DS AO3415 FDN304PZ IRLML6402 NTR4101P0.039 0.043 0.052 0.065 0.085

SI2305DS NTR2101P

12V Si2333DS FDN306P IRLML64010.032 0.040 0.050

8V Si2311DS NTR2101P0.045 0.045

SC70 N 30V Si1302DL AO7400 NTS4001N0.700 0.100 1.500

25V Si1304DL0.350

20V SI1300DL AO7408 MMBF2201N2.000 0.070 1.400

P 30V AO74010.200

20V Si1303EDL AO7411 NTS4101P0.430 0.120 0.360

12V Si1307DL0.290

RDS(ON) @ 4.5V

Small Outline Package – TSOP6Package Channel VDSS Vishay AOS Farichild IR ONTSOP6 N-Single 30V Si3434DV AO6400 FDC645N IRLMS1503

0.034 0.033 0.030 0.200

20V Si3460DV AO6408 FDC637AN IRLMS1902 NTGS34460.027 0.016 0.024 0.100 0.045

P-Single 30V Si3483DV AO6403 FDC658P IRF5800 NTGS34550.053 0.058 0.075 0.150 0.170

20V Si3493DV AO6409 FDC604P IRLMS6802 NTGS34430.027 0.045 0.033 0.050 0.065

12V Si3473DV FDC606P IRLMS4502 NTGS34330.023 0.026 0.042 0.075

8V Si3445ADV0.042

N-Dual 30V Si3948DV AO6800 FDC6561AN0.175 0.075 0.145

20V Si3900DV FDC6401N IRF58520.125 0.070 0.090

P-Dual 30V Si3993DV AO6801 FD6506P0.245 0.185 0.280

20V Si3983DV FDC6312P IRF58500.110 0.115 0.135

12V Si3973DV FDC6318P0.087 0.090

8V Si3905DV0.125

P+N 30V Si3552DV AO6601 FDC6333C0.360+0.175 0.185+0.075 0.220+0.150

20V Si3586DV AO6604 FDC6420C IRF58510.110+0.060 0.110+0.060 0.125+0.070 0.135+0.090

Loadswitch 20V Si3861DV FDC6330L NTGS1100L0.175 0.125 0.080

12V Si3863DV0.105

8V Si3865DV FDC6331L0.060 0.055

RDS(ON) @ 4.5V

Small Outline Packages – SC88Package Channel VDSS Vishay AOS Farichild IR ONSC88 N-Single 30V Si1426DH FDG315N

0.115 0.160

25V Si1404DH FDG313N NTJS4405N0.350 0.450 0.350

20V Si1406DH FDG327NZ0.065 0.090

P-Single 30V Si1433DH AO7405 FDG316P0.260 0.200W 0.300

20V Si1413DH FDG326P NTJS4151P0.115 0.140 0.095

12V Si1417DH FDN306P NTJS3151P0.085 0.040 0.060

8V Si1405DL0.125

N-Dual 30V Si1900DL ^FDG6303N NTJD4001N0.700 0.450 1.500

20V Si1912EDH AO7800 FDG6335N NTJD4401N0.280 0.235 0.300 0.375

P-Dual 30V ^FDG6304P1.100

20V Si1913EDH AO7801 FDG6308P NTJD4152P0.490 0.520 0.400 0.260

12V Si1917EDH FDG6316P0.370 0.270

8V Si1905DL NTJD2152P0.600 0.300

P+N 30V Si1539DL ^FDG6321C1.700+0.700 1.100+0.450

20V Si1563EDH AO7600 FDG6332C0.490+0.280 0.520+0.235 0.420+0.300

12V Si1557DH0.535+0.235

8V Si1555DL NTJD4105L0.600+0.385 0.375+0.300

Loadswitch 20V FDG6324L NTJD1155L0.750 0.300

12V

8V Si1865DL FDG6331L0.215 0.260

RDS(ON) @ 4.5V

Benefits Previously only available in SO-8 package (5 X 6 mm) Higher efficiency, reduced battery drain. Less voltage drop across the diode.

Features New smaller ChipFET™ in 8 lead package (1.9 X 3.0 mm) P-Channel MOSFET, VDDS= 20V, RDS(on)=130mΩ @ VGS = 4.5V SCHOTTKY VR=20V, with Low VF =0.32V @ 1 Amp

More Information Online See www.onsemi.com for:

– Datasheet –Case outline

Anode

Anode

Source

Gate

Cathode

Cathode

Drain

Drain

Description

Ultra-small eight lead package allows the integration of a MOSFET and Schottky Rectifier into one package. This is the smallest FETKY™ on the market with a maximum footprint of 3.10 X 2.00 mm to optimize board space. Independent pin out to each device to increase design flexibility, i.e. use Schottky as blocking diode or in parallel with body diode.

Applications

Any handheld application, including Cellular phones, Digital Cameras, MP3s, and PDAs that requires DC-DC converters (buck, buck-boost, and synchronous rectification).Charge control in portables

Product Availability: Samples Now Production Jan/03

NTHD4P02FT(135mohm / NTHD3101(95mohm)-FETKY™ MOSFET Plus Schottky Rectifier

NCP1800

Rcomp

Ccomp Cout

NTHD4P02F

ISNSVSNS

ISEL

Vcc

CFLGCOMP/DIS

OUT

Gnd

Vin

Host or LedHost Processor

CinRisel60K

Rsns

FETKy

Power Management (Charging) 电源管理

Schottky Rectifiers (Reverse current protection)Powermite MBRM120LT3 20V 0.45V@1A

MBRM120ET3 20V 0.53V@1A (Low leakage)MBRM130LT3 30V 0.45V@1A

SOD123 MBR0520LT3 20V [email protected]

Signal MOSFETsTSOP-6 NTGS3441 3.3A [email protected]

NTGS3443 3.1A [email protected]

ChipFET NTHS5441 3.9A [email protected] NTHS4101P 4.8A [email protected]

FETky (MOSFET/Schottky/ 肖特基 )

ChipFET NTHD4P02F 20V, 1.0A [email protected]

NTHD3101F 20V, 1.0A [email protected]

MBR0520 (20V,0.5A) SOD123 Schottky

MBRM120 (20V,1A) SOD123 Schottky

FETky Applications

Boost using N-Channel FETKy NTHD4N02FT1

NTHD4N02F

Buck using N-Channel FETKy NTHD4N02FT1

Vo

PWMControl

Vin

NTHD4N02F

Charging Circuit using P-Channel

NCP1800

Rcomp

Ccomp Cout

NTHD4P02F

ISNSVSNS

ISEL

Vcc

CFLGCOMP/DIS

OUT

Gnd

Vin

Host or LedHost Processor

CinRisel60K

Rsns

FETKy

Buck using P-Channel

NTHD4P02F

High Side Power Management - Load Switch

Application:Combines level shift with power switch Uses small N-Ch to drive large P-Ch Reduces board space Targeting trench and smaller packages

Trench products will combine small N-Ch with Large P-Ch

Products:NTHC5513, ChipFET, Complementary, 20V N&PNTJD4101C, SC-88, Complementary, 20V N & 8V PNTJD4105C, SC-88, Load Switch, 20V N & 8V PFor discrete see next page

High Side Load Switch高端负载开关

Switch is used in Positive side of Power Supply开关用在电源的正极

The lower the RDS(on) the higher the system efficiencyRDS(on) 越低，系统效率越高

Package vary depending on current applied封装随着应用的电流改变

Solution:解决方案 ON Semiconductors P-Channel trench provides lowest RDS(ON) in Industry

安森美半导体的 P- 沟道器件提供业内最低的 RDS(ON) Offering a variety of packages options depending on the current required

根据要求的电流提供各种封装选择

Device 器件 Package 封装 Key Parameter 主要参数Samples 样品Release 发布NTHS2101PT1 ChipFET 8V, 25 [email protected] Now 现在 Now 现在NTHS4101PT1 ChipFET 20V, 34 [email protected] Now 现在 Now 现在NTGS4111PT1 TSOP-6 20V, 40 [email protected] Oct 十月 Q1 04 2004 年 1 季度NTR2101PT1 SOT-23 8V, 50 [email protected] Sept 九月 Q1 -04 2004 年 1 季度NTR4101PT1 SOT-23 20V, 55 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTVS4101PT1 FlipChip 20V, 65 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTJS3151PT1 SC-88 12V, 75 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTJS4151PT1 SC-88 20V, 110 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTS2101PT1 SC-70 8V, 230 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTS4101PT1 SC-70 20V, 400 [email protected] Dec 十二月 Q1-04 2004 年 1 季度NTZS3153PT1 SOT-563 20V, 600 [email protected] Jan 一月 Q1-04 2004 年 1 季度

Inputs from:

•Battery

•Switching Regulator

•LDO

•Etc.

(-)

(+)Display

Logic(+)

ASIC(+)

P.A.(+)

PMU

N-Channel Level Shifter N- 沟道电平移动器

Application:应用： Need small N-Ch as level shifter to drive

large P-Ch需要小型 N- 沟道作为电平移动器来驱动大型P- 沟道

N-Ch has low current requirementN- 沟道要求小电流

Targeting Smaller packages目标在于更小型封装

Source源极

Drain漏极

P-ChP- 沟道

N-ChN- 沟道Gate

栅极Gate Drive

fromController

or uProcessor

来自控制器或微处理器的栅极驱

动

(+)

(+) Input Volts

(+) 输入电压 L

oad

负载

(+)

Device器件

Package封装

Key Parameter主要参数

Samples样品 RTM

NTA4001N SC-7520V, 2.5Ω@2.5V, ESD Gate20V, 2.5Ω@2.5V, ESD 栅极

Now现在

Now现在

NTS4001N SC-7030V, 1.5Ω@2.5V, ESD Gate30V, 1.5Ω@2.5V, ESD 栅极

Now现在

Now现在

NTJD4001N SC-8830V, 1.5Ω@2.5V, ESD Gate30V, 1.5Ω@2.5V, ESD 栅极

Now现在

Now现在

Power Management (Load Switch)电源管理（负载切换）

Application:应用：Combines level shift with power switch 结合了电平移位和功率切换 Uses small N-Ch to drive large P-Ch 使用小 N- 沟道来驱动大的 P- 沟道 Reduces board space 减小了板空间 Targeting trench and smaller packages 目标在于沟道和更小的封装

Device器件

Package封装

Key Parameter关键参数

Samples样品 RTM

NTHC5513 ChipFET 20V, 155 [email protected]现在

Now现在

NTJD4105C SC-88 8V, 340 [email protected]现在

Now现在

NTJD1155L SC-88 8V, 150 [email protected]三月

Apr四月

输入输出

负载电源管理

电池

负载开关

负载开关

负载开关

负载开关

功率放大器

显示器

逻辑器件

NTHC5513T1- ChipFET™ Complementary MOSFET

Benefits优点 40% footprint reduction over TSOP-6 相比 TSOP-6 减小了 40% 的占用面积 Higher efficiency 效率更高 Reduced battery drain 电池消耗更低

Features特性 ChipFET™ is smallest Complementary package to date

ChipFET™ 是目前最小的互补封装 N-Channel MOSFET, VDDS=20V,RDS(on)= 60mΩ @ VGS=4.5V

N- 沟道 MOSFET, VDDS=20V,RDS(on)= 60mΩ @ VGS=4.5V P-Channel MOSFET, VDSS=20V, RDS(on)=130 mΩ @ VGS=4.5V

P- 沟道 MOSFET, VDSS=20V, RDS(on)=130 mΩ @ VGS=4.5V

Description描述This complementary package provides both N-Channel and P-Channel FETs in one IC, it targets customers who want to reduce component count on their designs. 该互补封装在一个 IC 中提供了 N- 沟道和 P- 沟道 FET ，适用于要减少他们设计中元件数量的客户。Independent pin out to each device to increase design flexibility. 独立的引脚输出到每个设备，增加了设计灵活性。The ChipFET™ package offers a maximum footprint of 3.10 X 2.00 mm to optimize board space. ChipFET™ 封装提供了最大 3.10 X 2.00 mm 的占用面积，以优化板空间

Applications应用

Handheld devices, including Cellular phones, Digital Camera, MP3, and PDAs 手持设备，包括手机、数码相机、 MP3 和 PDA DC-DC converter (buck, buck-boost, and synchronous rectification) 直流－直流转换器（降压、降压－升压和同步整流Load Switch for portable applications 便携式应用的负载切换

Vo

PWM ControlPWM 控制Vin

NTHC5513

底视图顶视图

MOSFET: Battery Pack Roadmap

MC33349NCP802Vcell

GND

Ct

Discharge

Pack +

Charge

Pack -Q1Q2

NTQD6866NTQD6968NNTQD4154Z

20mm2

MMDF7N02

31mm2

Foo

tpri

nt

Time

NTLTD7900Z

11mm2

2.6mm2 x2

NTVS4101Z

2mm width package

8~10 mm2

Battery FET Portfolio

VDSS (V) VGS (V) Typ Max

TSSOP8

NTQD6866 20 ±12 0.025 0.030 N A

NTQD6968N 20 ±12 - 0.022 N B

* NTQD4154N 20 ±12 0.017 0.022 Y B

MICRO8-LL

NTLTD7900Z 20 ±12 0.021 0.026 Y A

2mm package

* NTLXxxxxN 20 ±12 0.017 0.022 Y -

RDS(ON) (m )@VGS =4.5V ESD Protection

Pin Configuration

TSSOP8

Pin Configuration “A” Pin Configuration “B”

Micro8LL

* Trench

Audio Amplifiers

ON Advantage Device can be driven directly off the battery where the competition requires an

additional part. Cancellation circuitry for pop and click noise No output capacitors on the stereo headset amplifier is an advanced feature to reduce

part count.

A = active, S = samplingRTM = release to market

Device Description StatusDemoBoard

NCP2890DMR2 1W mono audio amplifier in a micro 8 A YNCP2890AFCT2 1W mono audio amplifier in a 9-pin Bump A YNCP2809ADMR2 NCP2809BDMR2

135 mW stereo headset audio amplifier (no output capacitors required)

AY

NCP48941W mono audio amplifier with Fully

Differential Inputs, 9-bin uBump/Micro10S

(RTM May 04)

NCP48961W mono audio amplifier with Earpiece Driving Capability, 9-bin uBump/Micro10

S(RTM May 04)

NCP2820 Class D, 2W mono audio amplifier Developmemt

Applications• Wireless phones• PDAs• Portable Electronic Devices• Electronic Toys

Description The NCP2890 is an audio power amplifier capable of delivering 1W of continuous average power to an 8 load from a 5V-power supply, and 320 mW to a 4 load from a 2.6V power supply. The NCP2890 provides high quality audio while requiring few external components and minimal power consumption. It features a low-power consumption shutdown mode, which is achieved by driving the shutdown pin with logic low. The NCP2890 contains circuitry to prevent from “pop and click” noise that would otherwise occur during turn-on and turn-off transitions. For maximum flexibility, the NCP2890 provides an externally controlled gain (with resistors), as well as an externally controlled turn-on and turn-off times (with the bypass capacitor).

More Information Online: www.onsemi.com/ncp2890

Ordering Information • NCP2890DMR2 in Micro8, 4000 per reel• NCP2890FCT1 in Microbump9, 3000 per reel

Features• 1.2 W to an 8 load from a 5V power supply• 520 mW to an 8 load from a 3.3V power supply• 700 mW to a 4 load from a 3.3V power supply• 2.5V – 5.5V operation• Ultra low current shutdown mode• External gain configuration capability• External turn-on and turn-off time configuration capability• Thermal overload protection circuitry• Extremely high performances : PSRR and THD+N• « Pop and click » noise protection circuit• Ultra small Microbump9, Micro8 packages

Benefits• Handfree operations

• Earpiece operations• Operates directly from 1 cell Li+ or 3 cell NiMH batteries.• Extends battery life• Flexibility

• No LDO needed, High quality of sound• User friendly• Saves PCB surface

NCP28901 watt Audio Amplifier

NCP2890 Typical ApplicatonNCP2890 典型应用原理图

音频输入

旁路

关断

关断控制

ON Semiconductor

should be deleted

NCP2890 Output Power vs Supply Voltage

400

600

800

1000

1200

1400

1600

3.0 3.5 4.0 4.5 5.0

Power Supply (V)

Ou

tpu

t P

ow

er (

mW

)

THD+N=1%

THD+N=10%

NCP2890 / Output Power vs Supply Voltage. F=1kHz, RL=8

NCP2890 : Parametric Analysis

NCP2890

LM4890

0,01

0,10

1,00

10,00

0 100 200 300 400 500

Pout (mW)

THD

+N (%

)

THD+N vs. Pout Cbypass=1µF

Vp=2.6V, RL=4, Av=2, F=1KHz

-80

-75

-70

-65

-60

-55

-50

-45

-40

-35

-30

10 100 1 000 10 000

Frequency (Hz)

PS

RR

(d

B)

PSRR vs. VpVp=2.6V, RL=8, Av=2, Rin=10, VRipple=200mVpk-pk

Cbypass=1µF

LM4890

NCP2890


Vp=5V, RL=8, Av=2, F=1KHz

0,01

0,10

1,00

10,00

0 200 400 600 800 1000 1200 1400

Pout (mW)

THD+

N (%

)

NCP2890

LM4890

PSRR vs. Vp Cbypass=1µF

Vp=5V, RL=8, Av=2, Rin=10, VRipple=200mVpk-pk

-70

-65

-60

-55

-50

-45

-40

-35

-30

10 100 1 000 10 000Frequency (Hz)

PS

RR

(d

B) LM4890

NCP2890


Parameter Conditions NCP2890 LM4890 TS4890 TPA6203A1 Unit

Vp=5V, No Load 1.7 4 6 1.7 mA (typ)Vp=5V, 8 Ohms 2.1 5 no data no dataVp=2.6V, No Load 1.5 2.6 5 1.7

Shutdown current 1.0 2 1 0.9 µA (max)Output Offset

Voltage (Low er is better for battery life)

Vp=5V 20 50 20 9 mV (max)

THD+N (distortion)

Vp=2.6V, Av=2, RL=4ohms,F=1khz, Pout=300mW

0.04% 4% 0.2% 0.08%

PSRR (power supply ripple

rejection)

Vp=2.6V, Av=2, RL=8ohms, F=1kHz, Vripple=200mVp-p

-75dB -42dB -77dB -90dB (Av=1), -75dB (Av=5)

Micro8/Msop8 package size

3.0 x 4.9 mm (DMR2

suffix)

3.0 x 4.9 mm (MMX

suffix)

3.0 x 4.9 mm (IST

suffix)

not available

Microbump/BGA package size

1.45 x 1.45 mm (FCT1

suffix)

1.51 x 1.51 mm (IBLX

suffix)

not available

2.0 x 2.0 mm (GQV

suffix)

Quiescent Power Supply current

Applications

Portable stereo MP3 Player Cellular Phone Electronic Toys Personal Computer

Description

The NCP2809 is a cost-effective stereo audio power amplifier capable of delivering 135mWper channel of continuous average power per channel into 16 loads.

The NCP2809 audio power amplifier is specifically designed to provide high quality outputpower from low supply voltage, requiring very few external components. Since NCP2809does not require bootstrap capacitors or snubber networks, it is optimally suited for lowpower portable systems. NCP2809A has an internal gain of 0dB while specific external gaincan externally be set with NCP2809B .

If the application allows it, the virtual ground provided by the device can be connected tothe middle point of the headset. In such case, the two external heavy coupling capacitors areuseless. Otherwise, you can also use both outputs in single ended mode with externalcoupling capacitors.

Due to its excellent PSRR, it can be directly connected to the battery, saving the use of aLDO.


Ordering Information NCP2809ADMR2, Micro10, 4000 per reel NCP2809BDMR2, Micro10, 4000 per reel

NCP2809: NOCAP™ 135mW Stereo Headphone Power Amplifier

Already RTM

NCP2809 Parametric Analysis

0.001

0.01

0.1

1

10

0 20 40 60 80 100 120 140 160

Output Power (mW)

TH

D+

N (

%)

Vp=5V

Vp=3.3VVp=2.4V

THD+N vs.. Pout @ RL=16, f=1kHz

0.001

0.01

0.1

1

10

10 100 1 000 10 000 100 000

Frequency (Hz)

TH

D+

N (

%)

Vp=2.4V, Pout=20mW

Vp=5V, Pout=75mW

Vp=3V, Pout=30mW

THD+N vs.. Frequency @ RL=16

-70

-60

10 100 1 000 10 000 100 000

Frequency (Hz)

Cro

ssta

lk (

dB

)

Vp=2.4V, Pout=20mW

Vp=5V, Pout=75mW

Vp=3V, Pout=30mW

Crosstalk vs. Frequency @ RL=16

-110

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

10 100 1 000 10 000 100 000Frequency (Hz)

PS

RR

(d

B)

Vp=2.4V

Vp=5V

Vp=3V

PSRR @ Inputs grounded, Vripple=200mV pk-pk, RL=16

NCP2809 Application

:

Turn On sequence : Math2=V(load)=Ch3 -Ch1 Turn On sequence Zoom : Math2=V(load)=Ch3-Ch1

Turn Off sequence : Math2=V(load)=Ch3-Ch1 Turn Off sequence Zoom : Math2=V(load)=Ch3-Ch1

Ch1 = OUT_RCh2 = VMCCh3 = OUT_LMath1 = Vload_R = Ch1 - Ch2Math2 = Vload_L = Ch3 - Ch2

NCP2809A (Int Gain) / B (Ext Gain)

2.2V~5.5V Supply

135mW @ 16Ω 5V

Ultra Low Iq: 0.6µA max

Virtual Ground: Brilliant accuracy

excellent Crosstalk, Iq and offset

“Pop & Click” noise immunity

Excellent PSRR (90dB)

Directly supplied from Vbat

THD+N of 0.007% (typ)

Only 4 External Components for NCP2809A

8 External Components only for NCP2809B

µ10 Package (15mm²)

NCP2809 Benchmark

ON National MaximNCP2809 LM4911 MAX4410

Vcc 2.5V ~ 5.5V 2.0V ~ 5.5V 1.8V ~ 3.6VOutput Power16 Ohms/3V

45mWTHDN=1%

40mWTHDN=1%

80mWTHDN=1%

Iq (Shutdown) 0.6µA 1µA 6µAExternal SD Yes Yes YesPop & Click Yes (brilliant) Yes (partially) YesPSRR 90dB 55dB 90dBVbat -> Vcc Yes No NoTHD+N 0.007% (typ) 0.3% (max) 0.005% (typ)External Components

4 (A version)8 (B version) 7

5 (MAX4411)9 (MAX4410)

Package Type µ10 µ8 µBump/TSSOPPackage Size 15mm² 15mm² 4mm²/30mm²

Applications Cell Phone Portable stereo MP3 Player Electronic Toys Personal Computers

Description

The NCP4894 is a fully differential audio power amplifierdesigned for portable communication device applications. Thisfeature and the excellent audio characteristics of the NCP4894 are aguarantee of a high quality sound, for example, in mobile phonesapplications. With less than 0.01% distortion (THD + N), theNCP4894 is capable of delivering 1.0 W of continuous averagepower to an 8.0 load from a 5.0 V power and still 250 mW from2.6 V.

Ordering Information NCP4894 in µBump-9 and in µ-10

Features Fully Differential 1.2 W to an 8 load from a 5V power supply 2.5V – 5.5V operation Ultra low current shutdown mode External gain configuration capability External turn-on and turn-off time configuration capability Thermal overload protection circuitry Extremely high performances : PSRR and THD+N « Pop and click » noise protection circuit Ultra small Bumped die

Benefits

Drive capability for Polyphonic ringer or Speakerphone Operates directly from 1 cell Li+ or 3 cell NiMH batteries. Extends battery life Flexibility

No LDO needed, High quality of sound User friendly Saves PCB surface

NCP48941 Watt Fully Differential Audio Amplifier

Sample now, MP May 04

NCP4894 Typical Application Schematic NCP4894 典型应用原理图

VMC 桥

SD 选择

SD 模式

旁路

关断控制

旁路

旁路

差动

音

频输

入

NCP4894 Stereo Application Schematic NCP4894 立体声应用原理图

VMC 桥

SD 选择

SD 模式

旁路

关断控制

旁路

旁路

差动

音频

输入

Packaging 9 pin Flip-Chip CSP (1.5x1.5mm)

Product Ordering Information NCP4896FCT1G (9 pin Flip-Chip CSP)

3000 Units Tape and Reel, G suffix stands for Pb-free

Market & ApplicationsCellular Phone, PDA, DSC

DVD Player, Audio/Video Players

Personal Computer, Sound Card

Electronic Toys

Portable mono loudspeaker & earpiece

Features 2.2V to 5.5V operation 1.1W to an 8Ω load from a 5V supply, THD+N<0.008% Ultra Low Shutdown Current (20nA typical) “Pop & Click” noise protection circuit Superior THD+N: 0.007% at 1W Superior PSRR (70dB) Very Few External Components

NCP4896 1W Audio Power Amplifier with Earpiece Driving Capability

Through a dedicated SE/BTL pin, the user can drive either a single-ended 32Ω load (earpiece) up to 90mW, or a bridge-tied 8Ω load (loudspeaker) up to 1W. It saves the need of a second audio amplifier or an analog switch for the earpiece . The NCP4896 provides high quality audio while requiring few external components and minimal power consumption.

Benefits Supports wide range of battery power applications High Output Power Extends Battery Life Excellent Sound Quality Excellent Sound Quality Direct Connection to Battery, Saving an LDO Saves Manufacturing Cost

The NCP4896 is an audio power amplifier designed for portable device applications.


2.2V~5.5V SupplyThrough a dedicated SE/BTL pin, the user can drive either a single-ended 32Ω load (earpiece) up to 90mW, or a bridge-tied 8Ω load (loudspeaker) up to 1W.

→ Saves the need of a second audio amplifier or an analog switch for the earpiece .

High Output Power:→ 1.1W with 0.008% THD+N @ 8Ω, 5V

Ultra Low shutdown current: → 20nA typical

Very Low quiescent current:→ 2mA typical at BTL (bridge-tied load)→ 1mA typical at SE (single-ended)

“Pop & Click” noise protectionSuperior THD+N of 0.007% @ 1W, 8Ω, 5VVery Low Noise floor: 15µVrms (SE) & 35µVrms (BTL)Excellent PSRR (-70dB):

→ Directly supplied from Vbat. Save a LDO

9 pins Flip-Chip CSP ( 1.5x1.5mm)

Applications• Wireless phones• PDAs• Portable Electronic Devices• Electronic Toys

Description The NCP2890 is an audio power amplifier capable of delivering 1W of continuous average power to an 8 load from a 5V-power supply, and 320 mW to a 4 load from a 2.6V power supply. The NCP2890 provides high quality audio while requiring few external components and minimal power consumption. It features a low-power consumption shutdown mode, which is achieved by driving the shutdown pin with logic low. The NCP2890 contains circuitry to prevent from “pop and click” noise that would otherwise occur during turn-on and turn-off transitions. For maximum flexibility, the NCP2890 provides an externally controlled gain (with resistors), as well as an externally controlled turn-on and turn-off times (with the bypass capacitor).


Ordering Information • NCP2890DMR2 in Micro8, 4000 per reel• NCP2890FCT1 in Microbump9, 3000 per reel

Features• 1.2 W to an 8 load from a 5V power supply• 520 mW to an 8 load from a 3.3V power supply• 700 mW to a 4 load from a 3.3V power supply• 2.5V – 5.5V operation• Ultra low current shutdown mode• External gain configuration capability• External turn-on and turn-off time configuration capability• Thermal overload protection circuitry• Extremely high performances : PSRR and THD+N• « Pop and click » noise protection circuit• Ultra small Microbump9, Micro8 packages

Benefits• Handfree operations

• Earpiece operations• Operates directly from 1 cell Li+ or 3 cell NiMH batteries.• Extends battery life• Flexibility

• No LDO needed, High quality of sound• User friendly• Saves PCB surface

NCP28901 watt Audio Amplifier

NCP2890 Typical ApplicatonNCP2890 典型应用原理图

音频输入

旁路

关断

关断控制

ON Semiconductor

should be deleted

NCP2890 Output Power vs Supply Voltage

400

600

800

1000

1200

1400

1600

3.0 3.5 4.0 4.5 5.0

Power Supply (V)

Ou

tpu

t P

ow

er (

mW

)

THD+N=1%

THD+N=10%

NCP2890 / Output Power vs Supply Voltage. F=1kHz, RL=8


NCP2890

LM4890

0,01

0,10

1,00

10,00

0 100 200 300 400 500

Pout (mW)

THD

+N (%

)


Vp=2.6V, RL=4, Av=2, F=1KHz

-80

-75

-70

-65

-60

-55

-50

-45

-40

-35

-30

10 100 1 000 10 000

Frequency (Hz)

PS

RR

(d

B)

PSRR vs. VpVp=2.6V, RL=8, Av=2, Rin=10, VRipple=200mVpk-pk

Cbypass=1µF

LM4890

NCP2890


Vp=5V, RL=8, Av=2, F=1KHz

0,01

0,10

1,00

10,00

0 200 400 600 800 1000 1200 1400

Pout (mW)

THD+

N (%

)

NCP2890

LM4890

PSRR vs. Vp Cbypass=1µF

Vp=5V, RL=8, Av=2, Rin=10, VRipple=200mVpk-pk

-70

-65

-60

-55

-50

-45

-40

-35

-30

10 100 1 000 10 000Frequency (Hz)

PS

RR

(d

B) LM4890

NCP2890