NTE2331.pdfe 2331

2
NTE2331 Silicon NPN Transistor Color TV Horizontal Deflection Output w /Damper Diode Applications: D Color TV Horizontal Deflection Output D Color Display Horizontal Deflection Output Features: D High Speed (t f = 100nsec) D High Breakdown Voltage (V CBO = 1500V) D High Reliability D On–Chip Damper Diode Absolute Maximum Ratings: (T A = +25°C unless otherwise specified) Collector–Base Voltage, V CBO 1500V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage, V CEO 800V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, V EBO 6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, I C Continous 6A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak 20A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Dissipation (T C = +25°C), P C 60W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, T J +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, T stg –55° to +150°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics : (T A = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I CES V CE = 1500V 1.0 mA I CBO V CB = 800V 10 µA Collector Sustain Voltage V CEO(sus) I C = 100mA, I B = 0 800 V Emitter Cutoff Current I EBO V EB = 4V 40 130 mA Saturation Voltage Collector to Emitter V CE(sat) I C = 5A, I B = 1.0A 5 V Saturation Voltage Base to Emitter V BE(sat) I C = 5A, I B = 1.0A 1.5 V

description

electronic

Transcript of NTE2331.pdfe 2331

  • NTE2331Silicon NPN Transistor

    Color TV Horizontal Deflection Outputw/Damper Diode

    Applications: Color TV Horizontal Deflection Output Color Display Horizontal Deflection OutputFeatures: High Speed (tf = 100nsec) High Breakdown Voltage (VCBO = 1500V) High Reliability OnChip Damper DiodeAbsolute Maximum Ratings: (TA = +25C unless otherwise specified)CollectorBase Voltage, VCBO 1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CollectorEmitter Voltage, VCEO 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EmitterBase Voltage, VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC

    Continous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

    Collector Dissipation (TC = +25C), PC 60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg 55 to +150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25C unless otherwise specified)

    Parameter Symbol Test Conditions Min Typ Max UnitCollector Cutoff Current ICES VCE = 1500V 1.0 mA

    ICBO VCB = 800V 10 ACollector Sustain Voltage VCEO(sus) IC = 100mA, IB = 0 800 VEmitter Cutoff Current IEBO VEB = 4V 40 130 mASaturation Voltage

    Collector to EmitterVCE(sat) IC = 5A, IB = 1.0A 5 V

    Saturation VoltageBase to Emitter

    VBE(sat) IC = 5A, IB = 1.0A 1.5 V

  • Electrical Characteristics (Contd): (TA = +25C unless otherwise specified)Parameter Symbol Test Conditions Min Typ Max Unit

    DC Current Gain hFE1 VCE = 5V, IC = 1A 8 hFE2 VCE = 5V, IC = 5A 5 10

    Diode Forward Voltage VF IEC = 6A 2 VFall Time tf IC = 4A, IB1 = 0.8A, IB2 = 1.6A 0.1 0.3 s

    .630 (16.0)

    .158 (4.0)

    .315(8.0)

    .866(22.0)

    .804(20.4)

    B C E

    .134 (3.4) Dia.221 (5.6)

    .123 (3.1)

    .215 (5.45) .040 (1.0)