NTE2331.pdfe 2331
description
Transcript of NTE2331.pdfe 2331
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NTE2331Silicon NPN Transistor
Color TV Horizontal Deflection Outputw/Damper Diode
Applications: Color TV Horizontal Deflection Output Color Display Horizontal Deflection OutputFeatures: High Speed (tf = 100nsec) High Breakdown Voltage (VCBO = 1500V) High Reliability OnChip Damper DiodeAbsolute Maximum Ratings: (TA = +25C unless otherwise specified)CollectorBase Voltage, VCBO 1500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . CollectorEmitter Voltage, VCEO 800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EmitterBase Voltage, VEBO 6V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC
Continous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Peak 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (TC = +25C), PC 60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg 55 to +150C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max UnitCollector Cutoff Current ICES VCE = 1500V 1.0 mA
ICBO VCB = 800V 10 ACollector Sustain Voltage VCEO(sus) IC = 100mA, IB = 0 800 VEmitter Cutoff Current IEBO VEB = 4V 40 130 mASaturation Voltage
Collector to EmitterVCE(sat) IC = 5A, IB = 1.0A 5 V
Saturation VoltageBase to Emitter
VBE(sat) IC = 5A, IB = 1.0A 1.5 V
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Electrical Characteristics (Contd): (TA = +25C unless otherwise specified)Parameter Symbol Test Conditions Min Typ Max Unit
DC Current Gain hFE1 VCE = 5V, IC = 1A 8 hFE2 VCE = 5V, IC = 5A 5 10
Diode Forward Voltage VF IEC = 6A 2 VFall Time tf IC = 4A, IB1 = 0.8A, IB2 = 1.6A 0.1 0.3 s
.630 (16.0)
.158 (4.0)
.315(8.0)
.866(22.0)
.804(20.4)
B C E
.134 (3.4) Dia.221 (5.6)
.123 (3.1)
.215 (5.45) .040 (1.0)