NPN wideband silicon RF transistor

BFU550NPN wideband silicon RF transistorRev. 2.1 — 17 April 2019 Product data sheet

SOT143B

1 Product profile

1.1 General description

NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.

The BFU550 is part of the BFU5 family of transistors, suitable for small signal to mediumpower applications up to 2 GHz.

1.2 Features and benefits

• Low noise, high breakdown RF transistor• AEC-Q101 qualified• Minimum noise figure (NFmin) = 0.7 dB at 900 MHz• Maximum stable gain 21 dB at 900 MHz• 11 GHz fT silicon technology

1.3 Applications

• Applications requiring high supply voltages and high breakdown voltages• Broadband amplifiers up to 2 GHz• Low noise amplifiers for ISM applications• ISM band oscillators

1.4 Quick reference data

Table 1. Quick reference dataTamb = 25 °C unless otherwise specified

Symbol Parameter Conditions Min Typ Max Unit

VCB collector-base voltage open emitter - - 24 V

open base - - 12 VVCE collector-emitter voltage

shorted base - - 24 V

VEB emitter-base voltage open collector - - 2 V

IC collector current - 15 50 mA

Ptot total power dissipation Tsp ≤ 87 °C [1] - - 450 mW

hFE DC current gain IC = 15 mA; VCE = 8 V 60 95 200

Cc collector capacitance VCB = 8 V; f = 1 MHz - 0.72 - pF

fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz - 11 - GHz

NXP Semiconductors BFU550NPN wideband silicon RF transistor

BFU550 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved.

Product data sheet Rev. 2.1 — 17 April 20192 / 21


Gp(max) maximum power gain IC = 15 mA; VCE = 8 V; f = 900 MHz [2] - 21 - dB

NFmin minimum noise figure IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt - 0.7 - dB

PL(1dB) output power at 1 dB gaincompression

IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900MHz

- 13.5 - dBm

[1] Tsp is the temperature at the solder point of the collector lead.[2] If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.

2 Pinning informationTable 2. Discrete pinningPin Description Simplified outline Graphic symbol

1 collector

2 base

3 emitter

4 emitter

21

34

aaa-010459

1

3, 4

2

3 Ordering informationTable 3. Ordering information

PackageType number

Name Description Version

BFU550 - plastic surface-mounted package; 4 leads SOT143B

OM7962 - Customer evaluation kit for BFU520, BFU530 and BFU550 [1] -

[1] The customer evaluation kit contains the following:

• Unpopulated RF amplifier Printed-Circuit Board (PCB)– Unpopulated RF amplifier Printed-Circuit Board (PCB) with emitter degeneration

– Four SMA connectors for fitting unpopulated Printed-Circuit Board (PCB)– BFU520, BFU530 and BFU550 samples

– USB stick with data sheets, application notes, models, S-parameter andnoise files

4 MarkingTable 4. MarkingType number Marking Description

* = t : made in MalaysiaBFU550 *TC

* = w : made in China




5 Design supportTable 5. Available design supportDownload from the BFU550 product information page on http://www.nxp.com.

Support item Available Remarks

Device models for Agilent EEsof EDA ADS yes Based on Mextram device model.

SPICE model yes Based on Gummel-Poon devicemodel.

S-parameters yes

Noise parameters yes

Customer evaluation kit yes See Section 3 and Section 10.

Solder pattern yes

Application notes yes See Section 10.1 and Section 10.2.

6 Limiting valuesTable 6. Limiting valuesIn accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCB collector-base voltage open emitter - 30 V

open base - 16 VVCE collector-emitter voltage

shorted base - 30 V

VEB emitter-base voltage open collector - 3 V

IC collector current - 80 mA

Tstg storage temperature -65 +150 °C

Human Body Model (HBM) According to JEDECstandard 22-A114E

- ±150 VVESD electrostatic discharge voltage

Charged Device Model (CDM) According toJEDEC standard 22-C101B

- ±2 kV

7 Recommended operating conditionsTable 7. CharacteristicsSymbol Parameter Conditions Min Typ Max Unit

VCB collector-base voltage open emitter - - 24 V

open base - - 12 VVCE collector-emitter voltage

shorted base - - 24 V

VEB emitter-base voltage open collector - - 2 V

IC collector current - - 50 mA

Pi input power ZS = 50 Ω - - 10 dBm

Tj junction temperature -40 - +150 °C

http





Ptot total power dissipation Tsp ≤ 87 °C [1] - - 450 mW

[1] Tsp is the temperature at the solder point of the collector lead.

8 Thermal characteristicsTable 8. Thermal characteristicsSymbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to solder point [1] 140 K/W

[1] Tsp is the temperature at the solder point of the collector lead.

Tsp has the following relation to the ambient temperature Tamb:

Tsp = Tamb + P × Rth(sp-a)

With P being the power dissipation and Rth(sp-a) being the thermal resistance betweenthe solder point and ambient. Rth(sp-a) is determined by the heat transfer properties in theapplication.

The heat transfer properties are set by the application board materials, the board layoutand the environment e.g. housing.

aaa-010493

0 20 40 60 80 100 120 140 1600

100

200

300

400

500

600

Tsp (°C)

PtotPtot(mW)(mW)

Figure 1. Power derating curve

9 CharacteristicsTable 9. CharacteristicsTamb = 25 °C unless otherwise specified


V(BR)CBO collector-base breakdown voltage IC = 100 nA; IE = 0 mA 24 - - V

V(BR)CEO collector-emitter breakdown voltage IC = 150 nA; IB = 0 mA 12 - - V

IC collector current - 15 50 mA

ICBO collector-base cut-off current IE = 0 mA; VCB = 8 V - <1 - nA





hFE DC current gain IC = 15 mA; VCE = 8 V 60 95 200

Ce emitter capacitance VEB = 0.5 V; f = 1 MHz - 1.11 - pF

Cre feedback capacitance VCE = 8 V; f = 1 MHz - 0.41 - pF

Cc collector capacitance VCB = 8 V; f = 1 MHz - 0.72 - pF

fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz - 11 - GHz

f = 433 MHz; VCE = 8 V [1]

IC = 1 mA - 15 - dB

IC = 15 mA - 25.5 - dB

IC = 25 mA - 26.5 - dB

f = 900 MHz; VCE = 8 V [1]

IC = 1 mA - 12.5 - dB

IC = 15 mA - 21 - dB

IC = 25 mA - 21.5 - dB

f = 1800 MHz; VCE = 8 V [1]

IC = 1 mA - 10 - dB

IC = 15 mA - 15 - dB

Gp(max) maximum power gain

IC = 25 mA - 15 - dB

f = 433 MHz; VCE = 8 V

IC = 1 mA - 10 - dB

IC = 15 mA - 23 - dB

IC = 25 mA - 23.5 - dB

f = 900 MHz; VCE = 8 V

IC = 1 mA - 8 - dB

IC = 15 mA - 17.5 - dB

IC = 25 mA - 18 - dB

f = 1800 MHz; VCE = 8 V

IC = 1 mA - 4.5 - dB

IC = 15 mA - 11.5 - dB

|s21|2 insertion power gain

IC = 25 mA - 12 - dB

f = 433 MHz; VCE = 8 V; ΓS = Γopt

IC = 1 mA - 0.55 - dB

IC = 15 mA - 0.9 - dB

IC = 25 mA - 1.1 - dB


IC = 1 mA - 0.7 - dB

IC = 15 mA - 0.95 - dB

NFmin minimum noise figure

IC = 25 mA - 1.2 - dB






IC = 1 mA - 1 - dB

IC = 15 mA - 1.1 - dB

IC = 25 mA - 1.3 - dB


IC = 1 mA - 22.5 - dB

IC = 15 mA - 24.5 - dB

IC = 25 mA - 25 - dB


IC = 1 mA - 15 - dB

IC = 15 mA - 19 - dB

IC = 25 mA - 19 - dB


IC = 1 mA - 9.5 - dB

IC = 15 mA - 13 - dB

Gass associated gain

IC = 25 mA - 13.5 - dB

f = 433 MHz; VCE = 8 V; ZS = ZL = 50 Ω

IC = 15 mA - 9.5 - dBm

IC = 25 mA - 13.5 - dBm

f = 900 MHz; VCE = 8 V; ZS = ZL = 50 Ω

IC = 15 mA - 10 - dBm

IC = 25 mA - 13.5 - dBm

f = 1800 MHz; VCE = 8 V; ZS = ZL = 50 Ω

IC = 15 mA - 10 - dBm

PL(1dB) output power at 1 dB gain compression

IC = 25 mA - 13 - dBm

f1 = 433 MHz; f2 = 434 MHz; VCE = 8 V;ZS = ZL = 50 Ω

IC = 15 mA - 19 - dBm

IC = 25 mA - 23 - dBm

f1 = 900 MHz; f2 = 901 MHz; VCE = 8 V;ZS = ZL = 50 Ω

IC = 15 mA - 20 - dBm

IC = 25 mA - 23 - dBm

f1 = 1800 MHz; f2 = 1801 MHz; VCE = 8V; ZS = ZL = 50 Ω

IC = 15 mA - 19.5 - dBm

IP3o output third-order intercept point

IC = 25 mA - 23 - dBm

[1] If K > 1 then Gp(max) is the maximum power gain. If K < 1 then Gp(max) = MSG.




9.1 Graphs

aaa-011532

0 1 2 3 4 5 6 7 80

8

16

24

32

VCE (V)

ICIC(mA)(mA)

(1)(1)

(2)(2)

(3)(3)

(4)(4)

(5)(5)

(6)(6)

(7)(7)

Tamb = 25 °C.1. IB = 25 μA2. IB = 75 μA3. IB = 125 μA4. IB = 175 μA5. IB = 225 μA6. IB = 275 μA7. IB = 325 μAFigure 2. Collector current as a function of collector-emitter voltage; typical values

aaa-011541

0 5 10 15 20 25 300

25

50

75

100

125

150

IC (mA)

hFEhFE

(1)(1)

(2)(2)

Tamb = 25 °C.1. VCE = 3.0 V2. VCE = 8.0 VFigure 3. DC current gain as function of collectorcurrent; typical values

aaa-011542

0 5 10 15 20 25 300

25

50

75

100

125

150

IC (mA)

hFEhFE

(1)(1)

(2)(2)

(3)(3)

VCE = 8 V.1. Tamb = -40 °C2. Tamb = +25 °C3. Tamb = +125 °CFigure 4. DC current gain as function of collectorcurrent; typical values




aaa-011543

0.5 0.6 0.7 0.8 0.9 1.010-5

10-3

10-1

10

VBE (V)

ICIC(mA)(mA)

(2)(2)(1)(1)

Tamb = 25 °C.1. VCE = 3.0 V2. VCE = 8.0 VFigure 5. Collector current as a function of base-emittervoltage; typical values

aaa-011544

0.5 0.6 0.7 0.8 0.9 1.010-7

10-5

10-3

10-1

10

VBE (V)

IBIB(mA)(mA)

(1)(1)(2)(2)

Tamb = 25 °C.1. VCE = 3.0 V2. VCE = 8.0 VFigure 6. Base current as a function of base-emittervoltage; typical values

aaa-011545

1 1.4 1.8 2.2 2.6 310-8

10-7

10-6

10-5

10-4

VEB (V)

IBRIBR(A)(A)

(1)(1)(2)(2)(3)(3)

VCE = 3 V.1. Tamb = -40 °C2. Tamb = +25 °C3. Tamb = +125 °CFigure 7. Reverse base current as a function of emitter-base voltage; typical values

aaa-011546

0 2 4 6 8 10 12695

725

755

785

815

845

VCB (V)

CCCC(fF)(fF)

IC = 0 mA; f = 1 MHz; Tamb = 25 °C.Figure 8. Collector capacitance as a function ofcollector-base voltage; typical values




aaa-011547

0 5 10 15 20 25 30 35 400

2

4

6

8

10

12

IC (mA)

fTfT(GHz)(GHz)

(1)(1)

(2)(2)

(3)(3)(4)(4)

Tamb = 25 °C.1. VCE = 3.3 V2. VCE = 5.0 V3. VCE = 8.0 V4. VCE = 12.0 VFigure 9. Transition frequency as a function of collector current; typical values

aaa-011548

0 500 1000 1500 2000 2500 30000

10

20

30

40

f (MHz)

GG(dB)(dB)

|s21|2|s21|2

MSGMSG

Gp(max)Gp(max)

MSGMSG

IC = 15 mA; VCE = 8 V; Tamb = 25 °C.Figure 10. Gain as a function of frequency; typicalvalues

aaa-011549

0 500 1000 1500 2000 2500 30000

10

20

30

40

f (MHz)

GG(dB)(dB)

|s21|2|s21|2

MSGMSG

Gp(max)Gp(max)

MSGMSG

IC = 25 mA; VCE = 8 V; Tamb = 25 °C.Figure 11. Gain as a function of frequency; typicalvalues




aaa-011550

0 5 10 15 20 25 30 35 400

5

10

15

20

25

30

IC (mA)

|s21|2|s21|2(dB)(dB) (1)(1)

(2)(2)

(3)(3)

(4)(4)

(5)(5)

VCE = 8 V; Tamb = 25 °C.1. f = 300 MHz2. f = 433 MHz3. f = 800 MHz4. f = 900 MHz5. f = 1800 MHzFigure 12. Insertion power gain as a function ofcollector current; typical values

aaa-011551

0 5 10 15 20 25 30 35 400

5

10

15

20

25

30

IC (mA)

Gp(max)Gp(max)(dB)(dB)

(1)(1)

(2)(2)

(3)(3)

(4)(4)

(5)(5)

VCE = 8 V; Tamb = 25 °C.If K >1 then Gp(max) = maximum power gain. If K < 1 thenGp(max) = MSG.1. f = 300 MHz2. f = 433 MHz3. f = 800 MHz4. f = 900 MHz5. f = 1800 MHzFigure 13. Maximum power gain as a function ofcollector current; typical values

aaa-011552

0 2 4 6 8 10 12 140

5

10

15

20

25

30

VCE (V)

|s21|2|s21|2(dB)(dB) (1)(1)

(2)(2)

(3)(3)

(4)(4)

(5)(5)

IC = 25 mA; Tamb = 25 °C.1. f = 300 MHz2. f = 433 MHz3. f = 800 MHz4. f = 900 MHz5. f = 1800 MHzFigure 14. Insertion power gain as a function ofcollector-emitter voltage; typical values

aaa-011553

0 2 4 6 8 10 12 140

5

10

15

20

25

30

VCE (V)

Gp(max)Gp(max)(dB)(dB)

(1)(1)

(2)(2)

(3)(3)

(4)(4)

(5)(5)

IC = 25 mA; Tamb = 25 °C.If K >1 then Gp(max) = maximum power gain. If K < 1 thenGp(max) = MSG.1. f = 300 MHz2. f = 433 MHz3. f = 800 MHz4. f = 900 MHz5. f = 1800 MHzFigure 15. Maximum power gain as a function ofcollector-emitter voltage; typical values




0.2 0.5 1 2 5 10

0.2

0.5

1

2

5

10

-0.2

-0.5

-1

-2

-5

-10

0.0 ∞

aaa-011554

(1)(1)

(2)(2)

VCE = 8 V; 40 MHz ≤ f ≤ 3 GHz.1. IC = 15 mA2. IC = 25 mAFigure 16. Input reflection coefficient (s11); typical values

0.2 0.5 1 2 5 10

0.2

0.5

1

2

5

10

-0.2

-0.5

-1

-2

-5

-10

0.0 ∞

aaa-011555

(1)(1)

(2)(2)

VCE = 8 V; 40 MHz ≤ f ≤ 3 GHz.1. IC = 15 mA2. IC = 25 mAFigure 17. Output reflection coefficient (s22); typical values




aaa-011556

0 5 10 15 20 25 30 35 405

9

13

17

21

25

IC (mA)

IP3oIP3o(dBm)(dBm)

(1)(1)

(2)(2)

(3)(3)

VCE = 8 V; Tamb = 25 °C.1. f1 = 433 MHz; f2 = 434 MHz2. f1 = 900 MHz; f2 = 901 MHz3. f1 = 1800 MHz; f2 = 1801 MHzFigure 18. Output third-order intercept point as afunction of collector current; typical values

aaa-011557

0 5 10 15 20 25 30 35 40-4

0

4

8

12

16

IC (mA)

PL(1dB)PL(1dB)(dBm)(dBm)

(1)(1)

(2)(2)

(3)(3)

VCE = 8 V; Tamb = 25 °C.1. f = 433 MHz2. f = 900 MHz3. f = 1800 MHzFigure 19. Output power at 1 dB gain compression as afunction of collector current; typical values

aaa-011558

0 2 4 6 8 10 12 1416

18

20

22

24

26

VCE (V)

IP3oIP3o(dBm)(dBm)

(1)(1)(2)(2)

(3)(3)

IC = 25 mA; Tamb = 25 °C.1. f1 = 433 MHz; f2 = 434 MHz2. f1 = 900 MHz; f2 = 901 MHz3. f1 = 1800 MHz; f2 = 1801 MHzFigure 20. Output third-order intercept point as afunction of collector-emitter voltage; typical values

aaa-011559

0 2 4 6 8 10 12 146

8

10

12

14

VCE (V)

PL(1dB)PL(1dB)(dBm)(dBm)

(1)(1)(2)(2)

(3)(3)

IC = 25 mA; Tamb = 25 °C.1. f = 433 MHz2. f = 900 MHz3. f = 1800 MHzFigure 21. Output power at 1 dB gain compression as afunction of collector-emitter voltage; typical values




aaa-011560

10-1 1 10 1020

0.4

0.8

1.2

1.6

IC (mA)

NFminNFmin(dB)(dB)

(1)(1)

(2)(2)

(3)(3)

VCE = 8 V; Tamb = 25 °C; ΓS = Γopt.1. f = 433 MHz2. f = 900 MHz3. f = 1800 MHzFigure 22. Minimum noise figure as a function ofcollector current; typical values

aaa-011561

0 500 1000 1500 2000 25000

0.4

0.8

1.2

1.6

f (MHz)

NFminNFmin(dB)(dB)

(1)(1)

(2)(2)

(3)(3)

(4)(4)(5)(5)

(6)(6)

(7)(7)

(8)(8)

VCE = 8 V; Tamb = 25 °C; ΓS = Γopt.1. IC = 1 mA2. IC = 2 mA3. IC = 3 mA4. IC = 5 mA5. IC = 10 mA6. IC = 15 mA7. IC = 25 mA8. IC = 35 mAFigure 23. Minimum noise figure as a function offrequency; typical values




0.2 0.5 1 2 5 10

0.2

0.5

1

2

5

10

-0.2

-0.5

-1

-2

-5

-10

0.0 ∞

aaa-011562

(1)(1)

(2)(2)(3)(3)(4)(4)

(5)(5)(6)(6)

(7)(7)(8)(8)

VCE = 8 V; 400 MHz ≤ f ≤ 2 GHz.1. IC = 1 mA2. IC = 2 mA3. IC = 3 mA4. IC = 5 mA5. IC = 10 mA6. IC = 15 mA7. IC = 25 mA8. IC = 35 mAFigure 24. Optimum reflection coefficient (Γopt); typical values




10 Application information

More information about the following application example can be found in the applicationnotes. See Section 5 "Design support".

The following application example can be implemented using the evaluation kit. SeeSection 3 "Ordering information" for the order type number.

The following application example can be simulated using the simulation package. SeeSection 5 "Design support".

10.1 Application example: 433 ISM band LNA

433 ISM band LNA, optimized for low noise.

More detailed information of the application example can be found in the application note:AN11431.

aaa-010449

5.6 Ω

22 Ω

15 pF

56 pF

220 pF

1 µF

VCC 3.6 V

10 nF

220 pF

4.7 pF

RF input(SMA)

RF output(SMA)

10 kΩ

12 nHMurataLQW series


DUT

Figure 25. Schematic 433 MHz ISM band LNA

Remark: fine tuning of components maybe required depending on PCB parasitics.

Table 10. Application performance data at 433 MHzICC = 20 mA; VCC = 3.6 V


|s21|2 insertion power gain - 21 - dB

NF noise figure - 1.3 - dB

IP3o output third-orderintercept point

f1 = 433.1 MHz; f2 = 433.2 MHz;Pi = -30 dBm per carrier

- 19 - dBm




10.2 Application example: 866 ISM band LNA

866 ISM band LNA, optimized for low noise.

More detailed information of the application example can be found in the application note:AN11432.

aaa-010454

10 Ω

22 Ω

47 pF 82 pF

8.2 pF

220 pF

5.6 nF

VCC 3.6 V

3.9 nF

220 pF

1.5 pF

RF input(SMA)

RF output(SMA)

10 kΩ

8.2 nHMurataLQW series


DUT

Figure 26. Schematic 866 MHz ISM band LNA

Remark: fine tuning of components maybe required depending on PCB parasitics.

Table 11. Application performance data at 866 MHzICC = 20 mA; VCC = 3.6 V


|s21|2 insertion power gain - 15 - dB

NF noise figure - 1.4 - dB

IP3o output third-orderintercept point

f1 = 866.1 MHz; f2 = 866.2 MHz;Pi = -30 dBm per carrier

- 19 - dBm




11 Package outline

UNIT A

REFERENCESOUTLINEVERSION

EUROPEANPROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 1.10.9

A1max

0.1

b1

0.880.78

c

0.150.09

D

3.02.8

E

1.41.2

HE ywvQ

2.52.1

0.450.15

0.550.45

e

1.9

e1

1.7

Lp

0.1 0.10.2

bp

0.480.38

DIMENSIONS (mm are the original dimensions)

SOT143B 04-11-1606-03-16

0 1 2 mm

scale

Plastic surface-mounted package; 4 leads SOT143B

D

HE

E AB

v M A

X

A

A1

Lp

Q

detail X

c

y

w M

e1

e

B

21

34

b1

bp

Figure 27. Package outline SOT143B




12 Handling information

CAUTION

This device is sensitive to ElectroStatic Discharge (ESD). Observeprecautions for handling electrostatic sensitive devices.Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5,JESD625-A or equivalent standards.

13 AbbreviationsTable 12. AbbreviationsAcronym Description

AEC automotive electronics council

ISM industrial, scientific, and medical

LNA low-noise amplifier

MSG maximum stable gain

NPN negative-positive-negative

SMA SubMiniature version A

14 Revision historyTable 13. Revision historyDocument ID Release date Data sheet status Change notice Supersedes

BFU550 v.2.1 20190417 Product data sheet - BFU550 v.2

modification • Extended the description on the changes in Schematic 866 MHz ISM band LNA: Biasing onthe schematic is adapted according to the EVB to do the RF/DC. Connection of 10 K resistormoved to the other side of the 82 pF capacitor

BFU550 v.2 20190408 Product data sheet - BFU550 v.1

modification • Adapted Schematic 866 MHz ISM band LNA.

BFU550 v.1 20140305 Product data sheet - -




15 Legal information

15.1 Data sheet status

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for productdevelopment.

Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.[2] The term 'short data sheet' is explained in section "Definitions".[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple

devices. The latest product status information is available on the Internet at URL http://www.nxp.com.

15.2 DefinitionsDraft — The document is a draft version only. The content is still underinternal review and subject to formal approval, which may result inmodifications or additions. NXP Semiconductors does not give anyrepresentations or warranties as to the accuracy or completeness ofinformation included herein and shall have no liability for the consequencesof use of such information.

Short data sheet — A short data sheet is an extract from a full data sheetwith the same product type number(s) and title. A short data sheet isintended for quick reference only and should not be relied upon to containdetailed and full information. For detailed and full information see therelevant full data sheet, which is available on request via the local NXPSemiconductors sales office. In case of any inconsistency or conflict with theshort data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Productdata sheet shall define the specification of the product as agreed betweenNXP Semiconductors and its customer, unless NXP Semiconductors andcustomer have explicitly agreed otherwise in writing. In no event however,shall an agreement be valid in which the NXP Semiconductors productis deemed to offer functions and qualities beyond those described in theProduct data sheet.

15.3 DisclaimersLimited warranty and liability — Information in this document is believedto be accurate and reliable. However, NXP Semiconductors does notgive any representations or warranties, expressed or implied, as to theaccuracy or completeness of such information and shall have no liabilityfor the consequences of use of such information. NXP Semiconductorstakes no responsibility for the content in this document if provided by aninformation source outside of NXP Semiconductors. In no event shall NXPSemiconductors be liable for any indirect, incidental, punitive, special orconsequential damages (including - without limitation - lost profits, lostsavings, business interruption, costs related to the removal or replacementof any products or rework charges) whether or not such damages are basedon tort (including negligence), warranty, breach of contract or any otherlegal theory. Notwithstanding any damages that customer might incur forany reason whatsoever, NXP Semiconductors’ aggregate and cumulativeliability towards customer for the products described herein shall be limitedin accordance with the Terms and conditions of commercial sale of NXPSemiconductors.

Right to make changes — NXP Semiconductors reserves the right tomake changes to information published in this document, including withoutlimitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied priorto the publication hereof.

Applications — Applications that are described herein for any of theseproducts are for illustrative purposes only. NXP Semiconductors makesno representation or warranty that such applications will be suitablefor the specified use without further testing or modification. Customersare responsible for the design and operation of their applications andproducts using NXP Semiconductors products, and NXP Semiconductorsaccepts no liability for any assistance with applications or customer productdesign. It is customer’s sole responsibility to determine whether the NXPSemiconductors product is suitable and fit for the customer’s applicationsand products planned, as well as for the planned application and use ofcustomer’s third party customer(s). Customers should provide appropriatedesign and operating safeguards to minimize the risks associated withtheir applications and products. NXP Semiconductors does not accept anyliability related to any default, damage, costs or problem which is basedon any weakness or default in the customer’s applications or products, orthe application or use by customer’s third party customer(s). Customer isresponsible for doing all necessary testing for the customer’s applicationsand products using NXP Semiconductors products in order to avoid adefault of the applications and the products or of the application or use bycustomer’s third party customer(s). NXP does not accept any liability in thisrespect.

Limiting values — Stress above one or more limiting values (as defined inthe Absolute Maximum Ratings System of IEC 60134) will cause permanentdamage to the device. Limiting values are stress ratings only and (proper)operation of the device at these or any other conditions above thosegiven in the Recommended operating conditions section (if present) or theCharacteristics sections of this document is not warranted. Constant orrepeated exposure to limiting values will permanently and irreversibly affectthe quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductorsproducts are sold subject to the general terms and conditions of commercialsale, as published at http://www.nxp.com/profile/terms, unless otherwiseagreed in a valid written individual agreement. In case an individualagreement is concluded only the terms and conditions of the respectiveagreement shall apply. NXP Semiconductors hereby expressly objects toapplying the customer’s general terms and conditions with regard to thepurchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpretedor construed as an offer to sell products that is open for acceptance orthe grant, conveyance or implication of any license under any copyrights,patents or other industrial or intellectual property rights.

Suitability for use in automotive applications — This NXPSemiconductors product has been qualified for use in automotiveapplications. Unless otherwise agreed in writing, the product is not designed,authorized or warranted to be suitable for use in life support, life-critical orsafety-critical systems or equipment, nor in applications where failure ormalfunction of an NXP Semiconductors product can reasonably be expected




to result in personal injury, death or severe property or environmentaldamage. NXP Semiconductors and its suppliers accept no liability forinclusion and/or use of NXP Semiconductors products in such equipment orapplications and therefore such inclusion and/or use is at the customer's ownrisk.

Quick reference data — The Quick reference data is an extract of theproduct data given in the Limiting values and Characteristics sections of thisdocument, and as such is not complete, exhaustive or legally binding.

Export control — This document as well as the item(s) described hereinmay be subject to export control regulations. Export might require a priorauthorization from competent authorities.

Translations — A non-English (translated) version of a document is forreference only. The English version shall prevail in case of any discrepancybetween the translated and English versions.

15.4 TrademarksNotice: All referenced brands, product names, service names andtrademarks are the property of their respective owners.


Please be aware that important notices concerning this document and the product(s)described herein, have been included in section 'Legal information'.

© NXP B.V. 2019. All rights reserved.For more information, please visit: http://www.nxp.comFor sales office addresses, please send an email to: [email protected]

Date of release: 17 April 2019Document identifier: BFU550

Contents1 Product profile .................................................... 11.1 General description ............................................11.2 Features and benefits ........................................11.3 Applications ........................................................11.4 Quick reference data ......................................... 12 Pinning information ............................................ 23 Ordering information .......................................... 24 Marking .................................................................25 Design support ....................................................36 Limiting values ....................................................37 Recommended operating conditions ................ 38 Thermal characteristics ......................................49 Characteristics .................................................... 49.1 Graphs ............................................................... 710 Application information ....................................1510.1 Application example: 433 ISM band LNA ........ 1510.2 Application example: 866 ISM band LNA ........ 1611 Package outline .................................................1712 Handling information ........................................ 1813 Abbreviations .................................................... 1814 Revision history ................................................ 1815 Legal information ..............................................19

NPN wideband silicon RF transistor

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