DATA SHEET

The information in this document is subject to change without notice. Before using this document, pleaseconfirm that this is the latest version.

Document No. P10940EJ2V0DS00 (2nd edition)Date Published August 2001 NS CP(K)

NPN SILICON RF TRANSISTOR

NE462M02 / 2SC5338NPN SILICON RF TRANSISTOR FOR

HIGH-FREQUENCY LOW DISTORTION AMPLIFIER4-PIN POWER MINIMOLD

The mark shows major revised points.

FEATURES• High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz

• Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω• 4-pin power minimold package with improved gain from the NE46234 / 2SC4703

ORDERING INFORMATION

Part Number Quantity Supplying Form

NE462M02-AZ2SC5338-AZ

25 pcs (Non reel) • Magazine case

NE462M02-T1-AZ2SC5338-T1-AZ

1 kpcs/reel • 12 mm wide embossed taping

• Collector face the perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (T A = +25°°°°C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 25 V

Collector to Emitter Voltage VCEO 12 V

Emitter to Base Voltage VEBO 2.5 V

Collector Current IC 150 mA

Total Power Dissipation Ptot Note 1.8 W

Junction Temperature Tj 150 °C

Storage Temperature Tstg −65 to +150 °C

Note Mounted on 16 cm2 × 0.7 mm (t) ceramic substrate (Copper plating)

Because this product uses high-frequency technology, avoid excessive static electricity, etc.

JEITA Part No.

DISCONTIN

UED

Data Sheet P10940EJ2V0DS2

NE462M02 / 2SC5338

ELECTRICAL CHARACTERISTICS (TA = +25°°°°C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

DC Characteristics

Collector Cut-off Current ICBO VCB = 20 V, IE = 0 mA – – 1.5 μA

Emitter Cut-off Current IEBO VBE = 2 V, IC 5.1––Am 0 = μA

DC Current Gain hFE Note 1 VCE = 5 V, IC = 50 mA 50 – 250 –

RF Characteristics

Gain Bandwidth Product fT VCE = 5 V, IC = 50 mA – 6.0 – GHz

Insertion Power Gain S21e2 VCE = 5 V, IC = 50 mA, f = 1 GHz 8.5 10 – dB

VFNerugiF esioN CE = 5 V, IC = 50 mA, f = 1 GHz – – 3.5 dB

Reverse Transfer Capacitance Cre Note 2 VCB = 5 V, IE = 0 mA, f = 1 MHz – 1.0 2.0 pF

2nd Order Intermoduration Distortion IM2 VCE = 5 V – −55 – dBIC = 50 mA,Vin = 105 dBμV/75 Ω,f = 190 − 90 MHz VCE = 10 V −63 –

3rd Order Intermoduration Distortion IM3 VCE = 5 V – −76 – dBIC = 50 mA,Vin = 105 dBμV/75 Ω,f = 2 × 190 − 200 MHz VCE = 10 V – −83 –

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%2. Collector to base capacitance when the emitter grounded

hFE CLASSIFICATION

Rank SH SF SE

Marking SH SF SE

hFE Value 50 to 100 80 to 160 125 to 250

DISCONTIN

UED

Data Sheet P10940EJ2V0DS 3

TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C)

Mounted on Ceramic Substrate(16 cm2 × 0.7 mm (t) )

2.0

1.0

0 50 100 150

Tota

l Pow

er D

issi

patio

n P

tot (

W)

Ambient Temperature TA (˚C)

TOTAL POWER DISSIPATIONvs. AMBIENT TEMPERATURE

f = 1 MHz

Rev

erse

Tra

nsfe

r Cap

acita

nce

Cre (p

F)

Collector to Base Voltage VCB (V)

REVERSE TRANSFER CAPACITANCEvs. COLLECTOR TO BASE VOLTAGE

5.0

2.0

3.0

0.3

1.0

0.5

1 3 5 10 20 30

Col

lect

or C

urre

nt I

C (m

A)

Base to Emitter Voltage VBE (V)

COLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGE

1 000

100

1

10

0.11.0 1.20.2 0.4 0.6 0.8

VCE = 10 V

5 V

Col

lect

or C

urre

nt I

C (m

A)

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGE

80

100

120

20

40

60

0 2 4 6 8 10 12 14

IB = 0.7 mA 0.6 mA

0.1 mA

0.2 mA

0.3 mA

0.4 mA

0.5 mA

DC

Cur

rent

Gai

n h

FE

Collector Current IC (mA)

DC CURRENT GAIN vs.COLLECTOR CURRENT

500

100

50

101000.1 1 10 1 000

VCE = 10 V

5 V

f = 1 GHz

Collector Current IC (mA)

vs. COLLECTOR CURRENTINSERTION POWER GAIN

Inse

rtion

Pow

er G

ain

|S21

e |2 (dB)

10

5

05 7 10 20 50 70 100

VCE = 10 V

5 V

NE462M02 / 2SC5338

DISCONTIN

UED

Data Sheet P10940EJ2V0DS4

7

6

5

4

3

2

1

01 3 5 10 20 50 100

Collector Current IC (mA)

NOISE FIGURE vs.COLLECTOR CURRENT

Noi

se F

igur

e N

F (d

B)

VCE = 5 Vf = 1 GHz

–70

–40

–50

–60

10 20 50 100 200

Collector Current IC (mA)

IM2 vs. COLLECTOR CURRENT

2nd

Ord

er In

term

odul

atio

n D

isto

rtion

IM

2 (dB

)

Vin = 105 dB V/75 Ωf = 190 – 90 MHz

μ

VCE = 10 V

5 V

–80

–90

–70

–60

–5010 20 50 100 200

Collector Current IC (mA)

IM3 vs. COLLECTOR CURRENT3r

d O

rder

Inte

rmod

ulat

ion

Dis

torti

on I

M3 (

dB)

Vin = 105 dB V/75 Ωf = 2 × 190 – 200 MHz

μ

VCE = 10 V

5 V

Remark The graphs indicate nominal characteristics.

NE462M02 / 2SC5338

DISCONTIN

UED

Data Sheet P10940EJ2V0DS 5

S-PARAMETERS

VCE = 5 V, IC = 50 mA

Frequency S11 S21 S12 S22

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.).ged().ged().ged().ged(

0.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.0

0.6420.5210.4640.4280.4080.3900.3740.3600.3480.3510.3290.3280.3190.2970.3070.3080.3030.3090.3120.315

−61.5−103.0−123.8−137.2−147.7−154.3−161.1−163.9−168.0−175.1−179.9179.8171.9168.9165.2159.6156.6154.1150.3148.4

19.68913.3939.7087.4806.0785.1044.3943.8803.5273.2243.1113.0782.9142.5012.2852.1151.9931.8801.7861.704

138.5116.8106.399.594.591.388.686.284.583.381.878.969.666.265.363.962.962.060.859.9

0.0260.0450.0530.0590.0720.0800.0880.0970.1100.1190.1250.1440.1570.1660.1820.1920.2010.2190.2220.242

64.953.157.862.163.765.966.268.972.172.076.473.777.875.777.777.777.475.574.975.9

0.6030.4610.3590.3040.2890.2750.2770.2610.2710.2680.2760.3210.3200.2910.3250.3050.3130.3270.3210.341

−39.7−62.1−72.8−75.7−79.4−83.2−82.8−85.0−81.6−79.9−75.5−75.3−82.4−83.6−83.4−82.7−81.7−83.5−86.3−91.2

VCE = 5 V, IC = 100 mA

Frequency S11 S21 S12 S22

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.).ged().ged().ged().ged(

0.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.0

0.6470.5290.4800.4590.4430.4240.4060.4010.3960.3910.3610.3660.3630.3370.3520.3490.3520.3530.3540.354

−73.2−112.8−133.5−146.3−155.4−160.9−166.8−169.8−173.9−178.9176.3175.3167.7165.3160.9157.0154.7152.0147.9146.6

21.09113.2809.3907.2135.8264.8904.2063.7113.3723.0932.9502.9842.7882.4132.1942.0171.9001.8101.7301.633

134.7113.6103.396.792.089.286.984.382.781.880.477.267.564.663.461.760.960.358.857.8

0.0390.0600.0720.0790.0900.1020.1110.1200.1350.1430.1570.1660.1780.1920.2100.2200.2360.2480.2520.261

58.353.954.255.658.657.661.464.266.967.067.467.968.571.370.868.869.469.168.866.2

0.7930.5610.4090.3600.3330.3150.2970.2920.2880.2940.2980.3380.3590.3200.3220.3140.3290.3390.3360.342

−45.3−71.0−82.3−86.1−90.2−95.6−96.0−95.6−93.9−91.3−86.5−86.4−94.6−95.5−96.3−92.3−91.1−93.7−98.1−98.2

NE462M02 / 2SC5338

DISCONTIN

UED

Data Sheet P10940EJ2V0DS6

VCE = 10 V, IC = 50 mA

Frequency S11 S21 S12 S22

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.).ged().ged().ged().ged(

0.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.0

0.6990.5400.4610.4230.4030.3830.3550.3380.3330.3220.3030.3060.2950.2760.2830.2820.2830.2870.2900.300

−59.3−97.0

−119.1−133.2−144.4−150.8−158.1−161.3−165.1−172.7−177.8−178.3171.3171.0164.5159.5157.3154.8150.4148.7

21.06114.08810.2167.8986.4315.4074.6404.0933.7233.4063.2453.2783.0742.6442.3972.2082.0881.9861.8861.787

140.1118.4107.199.995.091.889.386.784.984.082.679.569.967.066.264.764.162.661.760.7

0.0370.0570.0660.0760.0870.0990.1100.1180.1290.1370.1500.1590.1680.1800.1980.2080.2200.2320.2470.254

68.257.855.056.456.658.759.661.463.966.065.666.267.669.770.569.170.070.069.468.4

0.8600.6290.4640.4090.3750.3630.3270.3230.3100.3240.3330.3710.3770.3470.3630.3420.3440.3660.3710.361

−37.6−62.0−72.1−77.1−80.6−86.2−87.7−87.8−86.0−83.2−79.9−80.5−86.5−86.7−88.4−85.6−86.0−87.8−89.3−92.9

VCE = 10 V, IC = 100 mA

Frequency S11 S21 S12 S22

(GHz) MAG. ANG. MAG. ANG. MAG. ANG. MAG. ANG.).ged().ged().ged().ged(

0.10.20.30.40.50.60.70.80.91.01.11.21.31.41.51.61.71.81.92.0

0.6510.5200.4600.4200.3950.3840.3670.3500.3430.3390.3160.3150.3090.2870.3030.2930.3010.3030.3060.311

−64.8−106.4−126.5−140.1−150.0−156.3−162.9−165.5−169.3−177.1177.9179.4170.1165.6161.9157.9153.7150.7148.8147.2

21.69414.28810.2147.8226.3555.3144.5694.0373.6493.3533.1933.2173.0262.5922.3742.1792.0541.9451.8401.753

136.2114.6104.598.193.290.387.885.683.882.881.078.469.165.965.263.562.461.460.559.7

0.0290.0420.0510.0610.0700.0770.0890.0950.1060.1170.1250.1420.1520.1640.1730.1870.2000.2140.2250.240

62.453.056.658.465.667.070.971.672.573.975.075.578.175.680.578.178.275.975.475.0

0.5880.4350.3300.2840.2700.2570.2580.2410.2570.2580.2610.3110.3240.2800.3080.2950.3070.3130.3210.332

−43.4−62.7−73.0−77.1−78.8−82.2−82.1−82.9−79.5−79.3−73.6−72.3−80.4−81.0−82.6−81.4−78.7−82.1−82.8−86.9

NE462M02 / 2SC5338

DISCONTIN

UED

Data Sheet P10940EJ2V0DS 7

PACKAGE DIMENSIONS

4-PIN POWER MINIMOLD (UNIT: mm)

1.5±0.1

0.25±0.02

4.5±0.1

2.1

1.6

0.8

0.42±0.060.42±0.060.

32.

45±0

.10.

1

0.8

MIN

.3.95

±0.2

5

0.46±0.06

3.0

1.5

0.851.

55

E B

C

E

E : EmitterC: CollectorB : Base

PIN CONNECTIONS

NE462M02 / 2SC5338

DISCONTIN

UED

NOTICE

1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. California Eastern Laboratories and Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information.

2. California Eastern Laboratories has used reasonable care in preparing the information included in this document, but California Eastern Laboratories does not warrant that such information is error free. California Eastern Laboratories and Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein.

3. California Eastern Laboratories and Renesas Electronics do not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of California Eastern Laboratories or Renesas Electronics or others.

4. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of Renesas Electronics product.

5. Renesas Electronics products are classified according to the following two quality grades: “Standard” and “High Quality”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. “Standard”: Computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots etc. “High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; and safety equipment etc. Renesas Electronics products are neither intended nor authorized for use in products or systems that may pose a direct threat to human life or bodily injury (artificial life support devices or systems, surgical implantations etc.), or may cause serious property damages (nuclear reactor control systems, military equipment etc.). You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application for which it is not intended. California Eastern Laboratories and Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for which the product is not intended by California Eastern Laboratories or Renesas Electronics.

6. You should use the Renesas Electronics products described in this document within the range specified by California Eastern Laboratories, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. California Eastern Laboratories shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges.

7. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or systems manufactured by you.

8. Please contact a California Eastern Laboratories sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. California Eastern Laboratories and Renesas Electronics assume no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations.

9. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. You should not use Renesas Electronics products or technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. When exporting the Renesas Electronics products or technology described in this document, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations.

10. It is the responsibility of the buyer or distributor of California Eastern Laboratories, who distributes, disposes of, or otherwise places the Renesas Electronics product with a third party, to notify such third party in advance of the contents and conditions set forth in this document, California Eastern Laboratories and Renesas Electronics assume no responsibility for any losses incurred by you or third parties as a result of unauthorized use of Renesas Electronics products.

11. This document may not be reproduced or duplicated in any form, in whole or in part, without prior written consent of California Eastern Laboratories.12. Please contact a California Eastern Laboratories sales office if you have any questions regarding the information contained in this document or Renesas

Electronics products, or if you have any other inquiries.

NOTE 1: “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries.NOTE 2: “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.NOTE 3: Products and product information are subject to change without notice.

CEL Headquarters • 4590 Patrick Henry Drive, Santa Clara, CA 95054 • Phone (408) 919-2500 • www.cel.com

For a complete list of sales offices, representatives and distributors,Please visit our website: www.cel.com/contactusDISCONTIN

UED