Semiconductors

V

iJunction Diodes

10 mA

0.7 V- 100 V

approximateactual

V

iThe Zener Diode

well-defined“Zener”voltage

Voltage Regulator ICs

fixed-output LM78XX (positive)LM79XX (negative)

Voltage Regulator ICs

adjustable-output (1.2-25V)LM317 (positive)LM337 (negative)

semiconductor switches

Bipolar Junction Transistor (BJT)rules of thumb : current gain = ~10x, Vbe = ~0.7V

Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)requires higher gate-source voltage, but “no” gate current

Darlington (cascaded BJTs)rules of thumb : current gain = ~100x, Vbe= ~1.4V

Driver ICsintegrated darlingtons, etc. with logic-level inputs

!"#$% !"#$&'()&*(+!, -)!./- &*01,*2

SLRS008C ! SEPTEMBER 1986 ! REVISED NOVEMBER 2004

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description/ordering information (continued)

On the L293, external high-speed output clamp diodes should be used for inductive transient suppression.

A VCC1 terminal, separate from VCC2, is provided for the logic inputs to minimize device power dissipation.

The L293and L293D are characterized for operation from 0°C to 70°C.

block diagram

1

0

3

4

5

6

7

89

10

11

12

13

14

15

161

21

0

1

10

2

4

3

M

M

M

1

0

1

0

10

VCC2

VCC1

NOTE: Output diodes are internal in L293D.

FUNCTION TABLE

(each driver)

INPUTS† OUTPUT

A EN

OUTPUT

Y

H H H

L H L

X L Z

H = high level, L = low level, X = irrelevant,

Z = high impedance (off)† In the thermal shutdown mode, the output is

in the high-impedance state, regardless of

the input levels.

collector-emitter breakdown = 100Vcurrent gain = 10-50x

TIP 31C (NPN Epitaxial Silicon Transistor):

current gain ~ 10x | Vbe > 0.6V | Vce,sat > 0.2V

(current controlled gate valve)

NPN Bipolar Junction Transistor (BJT)

collector

emitter

base

ULN2003A Darlington Array

The ULN2001A is obsoleteand is no longer supplied.

!"#$%%&'( !"#$%%$'( !"#$%%)'( !"#$%%*'( !"+$%%)'( !"+$%%*',-.,/01"2'.3 ,-.,/4!553#2

6'5"-#.21# 25'#7-7215 '55'8

SLRS027G ! DECEMBER 1976 ! REVISED JUNE 2004

11POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

APPLICATION INFORMATION

1

2

3

4

5

6

7

9

10

11

12

13

14

15

16

8

ULN2002A

P-MOS

Output

VSS V

Figure 16. P-MOS to Load

ULN2003A

ULQ2003A

Lamp

TestTTL

Output

VCC V

1

2

3

4

5

6

9

10

11

12

13

14

15

16

8

7

Figure 17. TTL to Load

VDD VULN2004A

ULQ2004A

1

2

3

4

5

6

9

10

11

12

13

14

15

16

8CMOS

Output

7

Figure 18. Buffer for Higher Current Loads

VCC V

RP

ULN2003A

ULQ2003A

1

2

3

4

5

6

9

10

11

12

13

14

15

16

8

TTL

Output

7

Figure 19. Use of Pullup Resistorsto Increase Drive Current

IN

common-emitter configuration500mA single output maximum

internal snubber diodes

The ULN2001A is obsoleteand is no longer supplied.

!"#$%%&'( !"#$%%$'( !"#$%%)'( !"#$%%*'( !"+$%%)'( !"+$%%*',-.,/01"2'.3 ,-.,/4!553#2

6'5"-#.21# 25'#7-7215 '55'8

SLRS027G ! DECEMBER 1976 ! REVISED JUNE 2004

3POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

schematics (each Darlington pair)

Input

B

Output

C

COM

E

ULN2001A

7.2 kΩ 3 kΩ

Output

C

COM

E

ULN2002A

7.2 kΩ

3 kΩ

10.5 kΩ

7 V

Input

B

Output

C

COM

E

ULN2003A, ULN2004A, ULQ2003A, ULQ2004A

7.2 kΩ 3 kΩ

RBInput

B

ULN/ULQ2003A: RB = 2.7 kΩULN/ULQ2004A: RB = 10.5 kΩ

All resistor values shown are nominal.

current gain ~ 100x | Vbe > 1.2V | Vce,sat > 0.8V

(cascaded current controlled gate valves)

Darlington

IRLZ34N (N-channel Power MOSFET)

gate threshold voltage = 1-2Von resistance = 0.035Ωmax drain current = 30A

drain-source breakdown = 55V

Vgs,on > 1V | Rds > 0

(voltage controlled gate valve)

N-channel MOSFETs

source

drain

gate

V +

MOTOR

V +

MOTOR

V +

MOTOR

The H-bridge

L293d (Quad Half-H Driver)

!"#$% !"#$&'()&*(+!, -)!./- &*01,*2

SLRS008C ! SEPTEMBER 1986 ! REVISED NOVEMBER 2004

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description/ordering information (continued)

On the L293, external high-speed output clamp diodes should be used for inductive transient suppression.

A VCC1 terminal, separate from VCC2, is provided for the logic inputs to minimize device power dissipation.

The L293and L293D are characterized for operation from 0°C to 70°C.

block diagram

1

0

3

4

5

6

7

89

10

11

12

13

14

15

161

21

0

1

10

2

4

3

M

M

M

1

0

1

0

10

VCC2

VCC1

NOTE: Output diodes are internal in L293D.

FUNCTION TABLE

(each driver)

INPUTS† OUTPUT

A EN

OUTPUT

Y

H H H

L H L

X L Z

H = high level, L = low level, X = irrelevant,

Z = high impedance (off)† In the thermal shutdown mode, the output is

in the high-impedance state, regardless of

the input levels.

VCC1 (logic supply) = 4.5V - 7.0VVCC2 (motor supply) = VCC1 - 36V

input high = 2.3V - VCC1input low < 1.5V

600mA (1.2A peak) per channelinternal protection diodes

Driver ICs

!"#$% !"#$&'()&*(+!, -)!./- &*01,*2

SLRS008C ! SEPTEMBER 1986 ! REVISED NOVEMBER 2004

2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

description/ordering information (continued)

On the L293, external high-speed output clamp diodes should be used for inductive transient suppression.

A VCC1 terminal, separate from VCC2, is provided for the logic inputs to minimize device power dissipation.

The L293and L293D are characterized for operation from 0°C to 70°C.

block diagram

1

0

3

4

5

6

7

89

10

11

12

13

14

15

161

21

0

1

10

2

4

3

M

M

M

1

0

1

0

10

VCC2

VCC1

NOTE: Output diodes are internal in L293D.

FUNCTION TABLE

(each driver)

INPUTS† OUTPUT

A EN

OUTPUT

Y

H H H

L H L

X L Z

H = high level, L = low level, X = irrelevant,

Z = high impedance (off)† In the thermal shutdown mode, the output is

in the high-impedance state, regardless of

the input levels.