Novel materials for high-performance solar cells
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Transcript of Novel materials for high-performance solar cells
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Novel materials forhigh-performance solar cells
Paul Kent
University of Cincinnati & ORNL
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Applications
GaAs/Ge 19% eff.
GaInP2/GaAs/Ge ?
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Research directions
Higher efficiency: Nitride semiconductors
Lower cost: Nanostructured materials
This is the theorists viewpoint - packaging and manufacturingissues are very real and significantly contribute to total cost
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Outline
1. IntroductionPhotovoltaicsEfficiency & economy?
2. How can we model these systems?Computational techniques
3. Nitride photovoltaic materialsGaAsN (and GaPN)Band gap reduction. Localized states
4. Nanostructured materialsCheap.Efficient?
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Acknowledgements
National Renewable Energy LaboratoryGolden, Colorado
Alex Zunger
Lin-Wang Wang, Laurent Bellaiche, Tommi Mattila
Ongoing work (in II-VIs) with Clas Persson
U.S. Department of EnergyOffice of ScienceBasic Energy SciencesDivision of Materials Sciences
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Sources of Improved Efficiency
1. Multiple materials(+junctions)2. Junction optimisation
In this talk, I concentrate on (1)
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Absorption in single material cells
Conduction band
Valance band(occupied states)
Ene
rgy
Photon h
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Multi-junction solar cells
Conduction band 1
Valance bands(occupied states)
Ene
rgy
Conduction band 2
Use of multiple materials to harvest photons of different energies
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High Efficiency Multijunction Solar Cells
GaAs1.4 eV
GaAs1.4 eV
GaAs1.4 eV
GaInP1.8 eV
GaInP1.8 eV
GaInP1.8 eV
Ge0.7 eV
New1.0 eV
future generationin
production
New1.0 eV
4 5 6 7 8 9
1
2 3 4
Energy (eV)
• Want 1 eV material lattice-matched to GaAs
Try GaInNAs
Calculated efficiencies (ideal)500X
AM1.5D: 36% 47% 52%one sun
AM0: 31% 38% 41%
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AimFind a 1eV band gap material that is
near lattice matched to GaAs
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Isostructural semiconductor alloying
Properties approx. a linear combination of the components
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Anomaly #1: Band gap reduction in GaAsN
Band gap reduced by ~120meV per % nitrogen!
Shan et al. Phys. Rev. Lett. 82 1221 (1999)
No nitr
ogen
0.9 %
2 % Band gapsGaAs ~1.5 eVGaN ~3.5 eV
1.2 %
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Anomaly #2: Dilute Nitrogen in GaAs
Many sharp lines seen in emission!
Liu, Pistol and Samuelson. Appl. Phys. Lett. 56 1451 (1990) T. Makimoto et al. Appl. Phys. Lett. 70 2984 (1997)
GaAs:N
Wavelength (nm)
NN1
0 kbar
1 kbar
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Outline
1. IntroductionPhotovoltaicsEfficiency & economy?
2. How can we model these systems?Computational techniques
3. Nitride photovoltaic materialsGaAsN (and GaPN)Band gap reduction. Localized states
4. Nanostructured materialsCheap.Efficient?
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Computational modeling
Conventional “off the shelf” first-principles LDA-DFT cannot be applied
- The band gaps are wrong (1eV+ errors)- System size is limited (10^2 vs 10^4-10^6 atoms).
Choose:
1. Empirical pseudopotential method for potential (accuracy)2. Folded spectrum method for eigenstates (size)
These same methods will also be used for quantum dots
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Large supercell modeling of alloys
Use large supercells (10^3-10^6 atoms) containing many nitrogensStatistically average properties of many random configurationsUse Valence Force Field for structural relaxationUse Empirical Pseudopotential Method for wavefunctions
Small SupercellApproach
Large SupercellApproach
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Outline
1. IntroductionPhotovoltaicsEfficiency & economy?
2. How can we model these systems?Computational techniques
3. Nitride photovoltaic materialsGaAsN (and GaPN)Band gap reduction. Localized states
4. Nanostructured materialsCheap.Efficient?
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N in GaAs, GaP
1. Isolated Nitrogen
2. Pairs and clusters
3. Well-developed alloys
I will discuss three cases:
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GaP:N
Nitrogen localized a1(N)
In GaP:N (0.01%):
Level ~30 meV below CBMIntroduces character - “direct gap”
Delocalized wavefunction
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A1 Levels of Isolated Impurity GaAs:N
44 Angstrom 44 A
ngst
rom
4096 atoms
/ L / X (%)
Nitrogen localized level ~ 150 meV inside conduction band
Localized Level in GaAs:N
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N in GaAs, GaP
1. Isolated Nitrogen
2. Pairs and clusters
3. Well-developed alloys
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N Clusters in GaAs, GaP
1. Ga(PmN4-m) Clusters
2. [1,1,0]-Oriented Nitrogen Chains
1 N 2 N 3 N 4 N
[1,1,0]
N N N N N
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4096 Atom Supercells
Energy levels of Ga-centred Nitrogen Clusters and (110) Chains in GaP
mNo. of Nitrogen Atoms in Cluster/Chain
1 2 3 4 5 6
Conduction Band Energy (meV)
-600
-500
-400
-300
-200
-100
0
100
CBMCBM
Ga-Centered Clusters
(110)-Oriented Chains
Energy levels of Clusters and Chains in GaP
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N in GaAs, GaP
1. Isolated Nitrogen
2. Pairs and clusters
3. Well-developed alloys
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ECBE = Delocalized Conduction Band Edge
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GaPN
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GaAsN
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Two types of state observed
Dilute Limit: PHS in conduction band and pair/cluster CS in gap
Intermediate Range: CS do not movePHS plunge down in energy
Amalgamation Point: Lowest energy PHS just below CS
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Anticrossing/repulsion between band edge and
localized statesdrives band gap down
Band gap reduction
The origin of the strong repulsion is still not fully understood
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GaPN Pressure dependence
–14 meV/GPa
PressureE
nerg
y
Bulk GaP
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Red Shift of PL vs PLE
Majority stateabsorbs
Minority stateemits
I. A. Buyanova et al. MRS IJNSR 6 2 (2001)
- Emission from localized minority states
- Absorption to majority states
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Summary
2. Applies to other III-Vs: InAsN, GaAsSbN… also O in II-VIs - a general mechanism
3. But carrier lifetimes are limited (intrinsic? extrinsic?)
1. Nitrogen clusters create localized electronic states Large band gap bowing results: a way of accessing new optical regions
Kent & Zunger Phys. Rev. Lett. 86 2613 (2001)
Kent & Zunger Phys. Rev. B 64 5208 (2001)Kent & Zunger Appl. Phys. Lett. 79 2339( 2001)
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Outline
1. IntroductionPhotovoltaicsEfficiency & economy?
2. How can we model these systems?Computational techniques
3. Nitride photovoltaic materialsGaAsN (and GaPN)Band gap reduction. Localized states
4. Nanostructured materialsCheap.Efficient?
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A new kind of photovoltaic cell
Separates absorption and transport
What to use for absorption?Suggestion: Colloidal quantum dots (+others)
Current efficiencies are e.g. 2% (Alivisatos)High efficiencies promised by simple theories
Many claims, press releases, companies
“Old Tech”N
asa
Gle
n R
esea
rch
Cen
ter
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Colloidal quantum dots
Few 1000 atoms of e.g. CdSeBawendi, Alivisatos, Klimov etc. late 1990s+
(Many developments in 1980s)
Exploit quantum confinement.Continuously tunable band gap
Reasonable control over size,shape (spheres, rods,…)
www.qdots.com
Nas
a G
len
Res
earc
h C
ente
rw
ww
.qdo
ts.c
om
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A new kind of photovoltaic cell
Separates absorption and transport
What to use for absorption?Suggestion: Colloidal quantum dots (+others)
Current efficiencies are e.g. 2% (Alivisatos)High efficiencies promised by simple theories
Many claims, press releases, companies
“Old Tech”N
asa
Gle
n R
esea
rch
Cen
ter
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“There is plenty of room at the bottom”
Richard Feynman(APS meeting 1959)
Plenty of room quote
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“For a successful technology, reality must take precedence over public relations, for nature cannot
be fooled.”Richard Feynman
(Rogers Commission 1986)
Technology quote
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Many questions
What is “optimal”? Realistically?
Influence of size, shape, composition on dot levels?
What is the role of the “host matrix”? Interface?
How are carriers transferred?
How are carriers “killed”?
…
Here, focus on the third question.
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Quantum confinement in InP dots, wires
Li & Wang Nature Materials 2 517 (2003)
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Shape effects
CBM
VBM
Quantum dot Quantum teardrop Quantum rod~300 meV variation in gap (and offsets) with shape
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Summary
Shape strongly influences absorption energies of colloidal “dots”
Reasonable agreement with experiment for few nm sized dots
Next step -
Evaluating different hosts, interfaces. Basic transport modeling.
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Conclusions
Efficiency improvements in photovoltaics are ongoing
Computational modeling is a useful tool forunderstanding optical properties
www.solar-impulse.com