Nov. 10, 2005UCSC US ATLAS Upgrade meeting -- Ely, Garcia-Sciveres1 DC to DC Power Converion R. Ely...

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Nov. 10, 2005 UCSC US ATLAS Upgrade meeting -- Ely, Garcia-Scive res 1 DC to DC Power Converion R. Ely and M. Garcia-Sciveres Atlas Upgrade Workshop Santa Cruz, November 2005 Series Scheme Charge Pumps • Plans

Transcript of Nov. 10, 2005UCSC US ATLAS Upgrade meeting -- Ely, Garcia-Sciveres1 DC to DC Power Converion R. Ely...

Page 1: Nov. 10, 2005UCSC US ATLAS Upgrade meeting -- Ely, Garcia-Sciveres1 DC to DC Power Converion R. Ely and M. Garcia-Sciveres Atlas Upgrade Workshop Santa.

Nov. 10, 2005 UCSC US ATLAS Upgrade meeting -- Ely, Garcia-Sciveres 1

DC to DC Power ConverionR. Ely and M. Garcia-Sciveres

Atlas Upgrade WorkshopSanta Cruz, November 2005

• Series Scheme• Charge Pumps• Plans

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Nov. 10, 2005 UCSC US ATLAS Upgrade meeting -- Ely, Garcia-Sciveres 2

Higher voltage power distribution is a MUST

Efficiency ratio: serial over parallel powering

01234567

0.5

1.5

2.5

3.5

4.5

5.5

6.5

7.5

8.5

9.5

10.5

11.5

12.5

13.5

14.5

15.5

x = IR/V

[1+

x]/[

1 +

x/n

]

n = 2

n = 5

n = 8

n= 10

SCT SLHC

(from Marc Weber’s Genova workshop talk)

Read: voltage delivery at n times operating voltage

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Two Options

•Serial Power

•Work started with Pixels. Demonstrated with present modules by Bonn group

•Picked up for SCT modules by Marc Weber at RAL

•Will be incorporated into stave prototypes

•DC-DC converters

•Proposed by LBNL

•Initial simulations shown at Genova (details later)

•No prototype yet due to lack of IC designer availability

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First of all:

Serial powering applies to modules, that is groups of chips on one hybrid connected to one sensor. Within hybrid, chips are

powered in parallel !

one current source for a chain of modules; voltage defined by set of regulators

“ground levels” of any pair of modules vary

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RAL work (Mark Weber) 4 SCT modules, serial powering PCBs, DAQ support cards

SCT module 1

DAQ support card

Serial powering PCB

M4

M3

M2

DAQ support card

Serial powering PCB

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Schematics of serial powering PCB

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Photograph of serial powering PCB

Shunt regulator

AC LVDS data

Analog regulator

AC LVDS Clock and command

SC

T m

odul

e

DA

Q s

uppo

rt

card

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Noise performance: indep. vs. serial poweringLet’s look at noise occupancy (NO) first

Module 662 powered independently

Noise performance remains excellent !

Module 662 powered in series with 3 others

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trimDAC range 0PP PP PP SP4 SP4 SP4

2.04E-06 2.15E-06 2.23E-06 1.78E-06 1.86E-06 2.33E-064.18E-06 3.88E-06 3.86E-06 3.60E-06 3.45E-06 4.11E-061.85E-05 1.82E-05 1.74E-05 1.03E-05 8.94E-06 9.62E-063.90E-05 3.96E-05 3.73E-05 1.50E-05 1.32E-05 1.55E-051.91E-05 1.82E-05 1.77E-05 1.07E-05 9.19E-06 9.94E-065.00E-05 4.78E-05 4.58E-05 3.19E-05 2.74E-05 2.96E-052.99E-05 2.90E-05 2.83E-05 3.87E-05 3.23E-05 3.42E-052.33E-05 2.25E-05 2.23E-05 3.27E-05 2.82E-05 2.94E-05

628

662

681

755

Noise performance: independent powering vs. serial powering

Noise performance remains excellent

Independently powered Powered in series

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Noise performance: independent powering vs. serial powering

Noise performance remains excellent

Independently powered | Powered in series

Noise for IP (1-3) and SP (4-6)

1.00E-006

1.00E-005

1.00E-004

1 2 3 4 5 6

run nr.

no

ise

occ

up

ancy

662 top 662 btm 681 top 681 btm 755 top 755 btm 628 top 628 btm

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Serial SCT plans from Genova

More studies on SCT module set-up (1-3 months)

o more noise tests e.g. introducing noise sources/ oscillationso closer look into AC-LVDS coupling

Built and study a more realistic system(½ -2 years)

o Dense packaging; o Grounding and shielding issueso Miniaturized regulator circuitry;o Modified readout chipo Redundancy features

If promising, develop SLHC prototype (> 2 years)

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DC-DC Converter options

• Switched Capacitor array– not common in industry except for divide by 2– Seems natural choice for us- fewer worries (see below).

• Inductor Buck converter – typical in industry– We would have to worry about magnetic field, EMI from

fringe fields, and would have to make our own air-core toroidal inductors.

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Divide by 4 Stack

• Phase 1

1

+-

1

2

2

+-

1

2

2

+-

1

2

2

+- Load

Vd

Vd

+ -+ - + -+-

Load

+-

+-

+-

+-

Load

• Phase 2

4 capacitors – 13 switches

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DC Converter - DC4x5

C2

1

C1

2

VS C0

C3

2

1

11

1

2

2

2

Z

DC converter with 4 caps and an ideal conversion ratio of 5

10 switches

Phase 1 Phase 2

VS

C3 C1

C2 C0C1C3

C2

V

V

2V

3V

5V

C0

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DC Converter – Div by 4 Ladder

C4

Z

C2

C1

2

2

1

1

2

1

1

2

C0

C3

C5

VS

C5

C3

C1

C4

C2

C0

VS

C5

C3

C1

C4

C2

C0

Phase 1

Phase 2

6 Capacitors

8 Switches

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Comparison of CircuitsNormalize to Divide by 5

• Stack5 caps 16 switches– Uniform charge on caps– Large voltage swings on switches

• DC4x5 4 caps 10 switches– 2 caps have potential of 3Vo– Lower voltage swings on switches

• Ladder 10 caps 12 switches– Larger potential differences on caps– Voltage swings on switches ~ Vo

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CMOS Transistor Switches

• Austria Microsystems H35 Process– Feature size 0.35μ– 3 gate oxides– Vds up to 50 vts– Bulk isolation – Gate oxide breakdown vt > 8vts

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AMS H35 Transistors

Device Name

Min. L

(μ)

Max.

Vgs(vt)

Max

Vds(vt)

On Res.

L = min

W= 50m

Cg (pf)

NMOSI 0.5 3.6 3.6 0.06 125

NMOS50T

0.5 3.6 50 0.54 364

PMOS50T

1.0 3.6 50 0.73 369

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Figures of Merit(for divide by n)

• Voltage efficiency - εv = n*Vout / Vin

– Vout is a function of the load = Vin / n for no load

• Current efficiency - εI = Iout / n*Iin

– Charge is lost charging the gate capacitance of the switches

• Power efficiency - εp = εv * εI

• Ripple - less than Iout*period/C

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Figures of Merit for Divide by n Stack Supplying Io

(all switches have ‘on’ resistance R, all switched capacitors have value C and Co >>C)

• Low frequency limit – RC << 1/f

• Hi frequency limit - RC >> 1/f

- clearly we want IoR << Vs/4 (for Vs = 10v, R < 2.5Ώ

nfCoI

nsVV

0

nelfornRoI

nsV

n

nnnRoI

nsVV

arg4

)2

)12)(1(1(2

0

nfConI

nsVV

0(For ladder)

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Divide by 5 Stack

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Drain-Gate-Source Waveforms of Switches

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V eff and I eff vs period

0

0.2

0.4

0.6

0.8

1

1.2

0 0.2 0.4 0.6 0.8 1

period (us)

effi

cien

cy

V effI eff

Efficiency versus Frequency

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Efficiency vs Transistor WidthEfficiency vs transistor width

0

0.2

0.4

0.6

0.8

1

1.2

0 10 20 30 40

width (mm)

eff

icie

ncy V eff 8mhz

V eff 5mhz

Veff 2.5mhz

Ieff 8mhz

Ieff 5mhz

Ieff 2.5mhz

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Power Efficiency

Power Efficiency vs transistor width

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0 5 10 15 20 25 30 35

width (mm)

eff

icie

ncy

Peff 8mz

Peff 5mhz

Peff 2.5 mhz

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Buck Converter

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DC Conversion Conclusions

• At an operating freqency of 5mhz(Co = 4.7uf, C1 = 0.2uf– Voltage efficiency ~.84– Current efficiency ~.92– Ripple = 1.2%– Output impedance = 0.25 ohms (25mv / 100ma)

• Clock generator will reduce efficiency by 10%

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Other topics not related to power

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Test of Indium Bumped “2E” Assembly

Mask used for scans

2E = 2 columns per pixel. Only a small region of the sensor is properly bonded to the readout chip. The rest of the pixels are disconnected. The bonded region is shown here. X-axis is column number and Y-axis is row. Only the bonded channels were probed in what follows. Disconnected channels were masked off.

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Noise vs. Voltage

This is the most probable single channel noise for select connected pixels. Determined from s-curve fits in charge injection scans after tuning thresholds to 4000e.

Looks like

Depletion voltage at ~23 V

Low voltage values not reliable due to bad S-curve

fits

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Representive S-curves at varying voltages

Above depletioon voltage (~25 V)

12 V

3.5 V

0.5 V

6.5 V

2.0 V

Corrected bias voltage

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Short strip module geometry

For a given hybrid technology, only way to reduce ratio (hybrid_mass)/(silicon mass) is to increase IC input density

hybrid

sensor

IC

Sensor is twice the strip length,

With bond pads in the middle.

stave

Hybrid can neck down here to save mass

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Nanowire carpet hybrid pixel proposal

• Submitted to LBNL molecular foundry

• Too recent to know where this will go

• Eliminates bump bonding AND sensor wafer patterning.

• Intent is to produce very cheap hybrid pixel modules.