NNfC Thin Films Update

July 2014

• DRIE– Chuck changed from 6 inch to 4 inch.

• Standard etch recipes tuned except for 15.0 um/min recipe needs to be tuned for profile.

– LF generator showing high forward power fault. Working on replacing the unit with a spare.

• RIE and PECVD– Pump Maintenance done on all three systems on July 18, 2014.

• Sputter and eBeam deposition– Sputter2 system down due WindowsXP activation (WindowsXP not

supported) – working with Smart Systems to find a solution.– Gold consumption on eBeam.

Tool status for the month of July-2014

pecvd- of-fice hrs

pecvd-

non of-fice hrs

Drie- of-fice hrs

Drie- non of-fice hrs

rie fl- of-fice hrs

rie fl-

non of-fice hrs

rie cl- of-fice hrs

rie cl-

non of-fice hrs

sput-ter

1- of-fice hrs

sput-ter 1-

non of-fice hrs

sput-ter

2- of-fice hrs

sput-ter 2

- non of-fice hrs

E-beam

evptr-of-fice hrs

E-beam

evptr-

non-of-fice hrs

RF-Anelva

Sputter-ing- of-fice hrs

Equip 1- non of-fice hrs

Thermal Evapora-tor- of-fice hrs

Thermal Evapora-tor- non of-fice hrs

Used 90 11 NaN 30 3 NaN 58 1 NaN 50 7 NaN 180 114 NaN 21 20 NaN 156 16 NaN 172 24 NaN 148 8

Not Used

86 349 NaN 123 258 NaN 122 359 NaN 126 353 NaN 0 246 NaN 11 20 NaN 12 308 NaN 8 336 NaN 32 352

Down-time

4 0 NaN 27 99 NaN 0 0 NaN 4 0 NaN 0 0 NaN 148 320 NaN 12 36 NaN 0 0 NaN 0 0

Un-avail-able

0 180 NaN 0 180 NaN 0 180 NaN 0 180 NaN 0 180 NaN 0 180 NaN 0 180 NaN 0 180 NaN 0 180

Total 180 540 NaN 180 540 NaN 180 540 NaN 180 540 NaN 180 540 NaN 180 540 NaN 180 540 NaN 180 540 NaN 180 540

50

150

250

350

450

550

Equipment Utilization Chart- JULY 2014

Tota

l hrs

Apr

May

Jun

July

Apr

May

Jun

July

Apr

May

Jun

July

Apr

May

Jun

July

Apr

May

Jun

July

Apr

May

Jun

July

Apr

May

Jun

July

Apr

May

Jun

July

Apr

May

Jun

July

Used

90 95 80 90 NaN

75 62 47 30 NaN

38 69 37 58 NaN

53 62 58 50 NaN

168

180

143

180

NaN

32 0 31 21 NaN

140

96 152

156

NaN

172

168

164

172

NaN

96 136

132

148

Not Used

89 73 99 86 NaN

102

115

50 123

NaN

142

104

137

122

NaN

124

110

122

126

NaN

12 0 37 0 NaN

124

0 109

11 NaN

40 52 28 12 NaN

8 12 16 8 NaN

84 36 48 32

Downtime

1 12 1 4 NaN

3 3 83 27 NaN

0 7 6 0 NaN

3 8 0 4 NaN

0 0 0 0 NaN

24 180

40 148

NaN

0 32 0 12 NaN

0 0 0 0 NaN

0 8 0 0

Unavailable

0 0 0 0 NaN

0 0 0 0 NaN

0 0 0 0 NaN

0 0 0 0 NaN

0 0 0 0 NaN

0 0 0 0 NaN

0 0 0 0 NaN

0 0 0 0 NaN

0 0 0 0

Total

180

180

180

180

NaN

180

180

180

180

NaN

180

180

180

180

NaN

180

180

180

180

NaN

180

180

180

180

NaN

180

180

180

180

NaN

180

180

180

180

NaN

180

180

180

180

NaN

180

180

180

180

10

30

50

70

90

110

130

150

170

190

Equipment Utilization Chart- ComparisonT

ota

l h

rs

RIE-Fl RIE-Cl E-beam

EvaporatorSputter Coater1

Sputter Coater2

Thermal Evap.

PECVD DRIEAnelva Sputter

Feb: 2013

Mar: 2013

Apr: 2013

May: 2013

Jun: 2013

Jul: 2013

Aug: 2013

Sep: 2013

Oct: 2013

Nov: 2013

Dec: 2013

Jan: 2014

Feb: 2014

Mar: 2014

Apr: 2014

May: 2014

Jun: 2014

July: 2014

Used for de-po-sitions (g)

1.05 1.797 1.6 2.24 1.2 0.181 0 6.885 1.483 1.901 8.244 7.959 6.134 7.614 7.605 3.195 17.823 19.792

Given to RD (g)

NaN NaN NaN NaN 5.183 NaN NaN 5.001 NaN NaN NaN NaN NaN NaN NaN NaN NaN NaN

Borrowed from RD (g)

NaN NaN NaN NaN NaN NaN NaN NaN NaN NaN NaN NaN NaN NaN NaN 15.124 19.994 NaN

2.5

7.5

12.5

17.5

22.5E-BEAM EVAPORATION Au USAGE CHART

We

igh

t in

gra

ms.

Pooling of users for the month of July -2014

Sl No. Date Au thickness deposited in nm.

Pooling of users in

numbers.

1 2/7/2014 70 52 3/7/2014 45 23 4/7/2014 100 64 8/7/2014 100 25 11/7/2014 70 56 17/07/2014 70 27 21/07/2014 70 28 24/07/2014 70 29 25/07/2014 70 2

10 25/07/2014 70 211 30/07/2014 100 2

Total number of gold deposition done in July: 21Total number of slots had multiple users: 11Total number of slots had single users: 10

We were not been able to club multiple users on 10 slots because of the thickness and combinationof different materials.

R1=5min

S1=5min

R2=5min

S2=5min

0% of 7KV.

5% of 7KV.

9% of 7KV

R1=5min

S1=1min

R2=5min

S2=1min

4% of 7KV.

8% of 7KV

0% of 7KV.

Power ramp up hold time and power modified in order to reduce the gold usage

At power percentage 9% the rate of deposition will be almost 1 A/s.

During Soak2 (300 seconds) almost 30 nm of gold will be evaporated and it gets deposited on the shutter.

By reducing the Soak2 duration from 300 seconds to 60 seconds we are saving gold that goes on the shutter.( Roughly 24 nm gold savings per deposition ~ 8g of gold for 20 deposition runs).

BEFORE PRESENT

• PECVD silicon carbide development

Silicon Carbide film optimization• Comparison Study of Oxford SiC recipe and SiC w/ H2 dilution.• FTIR and XPS was done to characterize the films.

4000 3500 3000 2500 2000 1500 1000 500

-0.14

-0.12

-0.10

-0.08

-0.06

-0.04

-0.02

0.00

0.02

0.04

0.06

Abs

orba

nce

(a.u

)

Wavenumber (cm)-1

SiC:H

SiC oxford

SiH

-208

0 cm

-1

Si-C

- 78

0cm

-1

Si-C

Hn-1

243

cm-1

CH

n-249

3 cm

-1

Element Atomic %

SiC (Oxford)

Si 51.63

C 25.44

SiC with H2

Si 44.33

C 45.51

Deposited Material

Deposition Rate (nm/min)

SiC (Oxford) 28.7

SiC with H2 6.1

• Further exploration of process space with 2-level 3-variable DOE

• Dep. Rate and FTIR peak area for SiC/SiH/Si-CHn compared for film quality.

FR/Pow/Press

Trial no. ConditionsH2 Flow Rate

(sccm) Power (W)Pressure (mTorr)

1 LLL 130 20 5002 HLL 70 20 5003 LHL 130 30 5004 LLH 130 20 10005 LHH 130 30 10006 HHL 70 30 5007 HLH 70 20 10008 HHH 70 30 1000

Normalized FTIR Peak area

Si-H Si-CHn Si-C0.00221763 0.000138 0.02019280.00207506 0.000155 0.01722960.00140143 7.13E-05 0.01504350.00241968 0.000191 0.01376510.0020509 0.000157 0.0171856

0.00178333 9.17E-05 0.02746670.00209386 0.000235 0.02477440.00210811 0.000176 0.0254122

• FTIR spectra recorded for each of the 8 samples and normalized area under Si-C, Si-H and Si-CHn was calculated. SiC “quality” based on maximizing Si-C peak area.

Dep. Rate (nm/min)

66.048.426.648.98

7.399.86

• Power and H2 Flow rate are the main parameters for SiC deposition (in SiH4-starvation regime with H2 dilution).• Three runs done varying the power, H2 flow rate and pressure as shown in the table below:

Run no. Power (W) H2 (sccm) Pressure (mTorr)

1 40 150 1000

2 20 70 1000

3 30 150 500

• Deposition rate, Refractive Index and Residual stress were measured.

Run no.Deposition

Rate (nm/min)

Residual stress (GPa) Si/C ratio n k

1 10.8 0.66 (Compressive) 0.86 2.27 0.013

2 7.8 0.305 (Compressive) 1.04 2.26 0.011

3 8.5 0.876 (Compressive) 0.77 2.08 0.025

• Run 1 with increased SiH4 flow rate from 5sccm- 10sccmRun no.

Deposition Rate (nm/min)

Si/C ratio n k

4 14.5 1.18 2.612 0.011

Apr: 2013

May: 2013

Jun: 2013

July: 2013

Aug: 2013

Sep: 2013

Oct: 2013

Nov: 2013

Dec: 2013

Jan: 2014

Feb: 2014

Mar: 2014

Apr: 2014

May: 2014

Jun: 2014

July: 2014

THICKNESS (nm)

100 140 60 7 0 405 160 270 360 345 320 470 490 190 945 1335

100

300

500

700

900

1100

1300

1500

E-BEAM EVAPORATION Au USAGE CHARTTh

ickn

ess

in n

m

TOTAL THICKNESS DEPOSITED TILL DATE: 5597 nm

Gold usage as per individual users:Sl no. NAME THICKNESS (nm)

1 Rohith Soman 17202 Marsha Parmar 10803 Aditya Roy Choudhury 6704 Tanushree H Choudhury 6605 Nagarjun KP 5106 Suman Sarkar 4857 Manohar Lal 4758 Adil Meersha 3509 Yasasvi GPR 250

10 Chandan 25011 Parameshwar 24012 Ganapathi 21013 Shishir Kumar 20014 Ankur Goswami 18015 Kazi Rafsanjani Amin 17016 Dhanya Varghese 12017 Shradha Takur 11518 Sowmya M S 10019 Saloni Chaurasia 8020 Abheek 7021 Manavendra 7022 Vijaya Lakshmi 6523 Kranthi 6024 Abhishek 6025 Chandrashekar S Kambar 5026 Vamsi 5027 Venkatesh Bharadwaja AD 5028 Shiva 4729 Sangeeth 1530 Deepak Ranjan Nayak 5

TOTAL 8407

Total thickness deposited as per slots booked : 5597 nm

Total thickness deposited for individual users : 8407 nm The difference is : 2810 nm

Average gold required to deposit 100 nm is : 1.6 g.

Saved around 45 g of gold, by pooling the users.

Remaining gold : 28.243 g