NEW SEMI_topicEC

download NEW SEMI_topicEC

of 12

Transcript of NEW SEMI_topicEC

  • 8/9/2019 NEW SEMI_topicEC

    1/12

    CIPHER

    2010

    NEW SEMINAR

    TOPICS FOR

    ELECTRONICSINDIA

    RAJMAL MENARIYA

    I N D I A

  • 8/9/2019 NEW SEMI_topicEC

    2/12

    CONTENT

    I. 3-D ICs

    II. light pen

    III. Active pixel sensor

    IV. Light emitting polymer

    V. Trigate transistor

    VI. FinFet transistor

  • 8/9/2019 NEW SEMI_topicEC

    3/12

    INTRODUCTION

    3-D ICs

    The unprecedented growth of the computer and the

    Information technology industry is demanding Very Large

    Scale Integrated (VLSI) circuits with increasing

    functionality and performance at minimum cost and

    power dissipation. VLSI circuits are being aggressively

    scaled to meet this Demand, which in turn has some

    serious problems for the semiconductor industry.

    Additionally heterogeneous integration of different

    technologies in one single chip (SoC) is becomingincreasingly desirable, for which planar (2-D) ICs may not

    be suitable.

    3-D ICs are an attractive chip architecture that can

    alleviate the interconnect related problems such as delay

    and power dissipation and can also facilitate integrationof heterogeneous technologies in one chip (SoC). The

    multi-layer chip industry opens up a whole new world of

    design. With the Introduction of 3-D ICs, the world of

    chips may never look the same again

  • 8/9/2019 NEW SEMI_topicEC

    4/12

    Introduction

    light pen

    A light pen is a computer input device in the form of a light-

    sensitive wand used in conjunction with the computer's CRTmonitor. It allows the user to point to displayed objects, or draw

    on the screen, in a similar way to a touch screen but with greater

    positional accuracy. A light pen can work with any CRT-based

    monitor, but not with LCD screens, projectors or other display

    devices.

    A light pen is fairly simple to implement. The light pen works bysensing the sudden small change in brightness of a point on the

    screen when the electron gun refreshes that spot. By noting

    exactly where the scanning has reached at that moment, the X,Y

    position of the pen can be resolved. This is usually achieved by

    the light pen causing an interrupt, at which point the scan

    position can be read from a special register, or computed from a

    counter or timer. The pen position is updated on every refresh of

    the screen.

    The light pen became moderately popular during the early 1980s.

    It was notable for its use in the Fairlight CMI, and the BBC Micro.

    However, due to the fact that the user was required to hold his or

  • 8/9/2019 NEW SEMI_topicEC

    5/12

    her arm in front of the screen for long periods of time, the light

    pen fell out of use as a general purpose input device.

    Introduction

    Active pixel sensor

    An active pixel sensor (APS) is an image sensor consisting of an integrated circuit

    containing an array of pixels, each containing a photodetector as well as three or

    more transistors. Since it can be produced by an ordinary CMOS process, APS is

    emerging as an inexpensive alternative to CCDs.

    The standard CMOS APS pixel consists of three transistors as well as a

    photodetector.

    The photodetector is usually a photodiode, though photogate detectors are used in

    some devices and can offer lower noise through the use of correlated double

    sampling. Light causes an accumulation, or integration of charge on the 'parasitic'

    capacitance of the photodiode, creating a voltage change related to the incident

    light.

    One transistor, Mrst, acts as a switch to reset the device. When this transistor is

    turned on, the photodiode is effectively connected to the power supply, VRST,

    clearing all integrated charge. Since the reset transistor is n-type, the pixel operates

    in soft reset.

    The second transistor, Msf, acts as a buffer (specifically, a source follower), an

    amplifier which allows the pixel voltage to be observed without removing the

  • 8/9/2019 NEW SEMI_topicEC

    6/12

    accumulated charge. Its power supply, VDD, is typically tied to the power supply

    of the reset transistor.

    The third transistor, Msel, is the row-select transistor. It is a switch that allows a

    single row of the pixel array to be read by the read-out electronics.

    Array

    A typical two-dimensional array of pixels is organized into rows and columns.

    Pixels in a given row share reset lines, so that a whole row is reset at a time. The

    row select lines of each pixel in a row are tied together as well. The outputs of each

    pixel in any given column are tied together. Since only one row is selected at a

    given time, no competition for the output line occurs. Further amplifier circuitry is

    typically on a column basis.

  • 8/9/2019 NEW SEMI_topicEC

    7/12

  • 8/9/2019 NEW SEMI_topicEC

    8/12

    Introduction

    FinFET transistor

    A FinFET transistor is a MOSFET double-gate transi

    where the gate is placed on two, three, or four sides o

    around the channel, forming a double gate structure.given the generic name 'finfets' because the source/dr

    silicon surface.

    The FinFET devices have significantly faster switchidensity than the mainstream CMOS technology. The

    gate thickness of 5 nanometres and gate width under

    application in 65 nanometer chips and are candidates

    technology.

  • 8/9/2019 NEW SEMI_topicEC

    9/12

    Introductio

    IEEE 1394 INTERFACE

    The IEEE 1394 interface is a serial bus interface stan

    communications and isochronous real-time data transpersonal computers, as well as in digital audio, digita

    aeronautics applications. The interface is also knownFireWire (Apple), i.LINK (Sony), and Lynx (Texas I

    replaced parallel SCSI in many applications, becausecosts and a simplified, more adaptable cabling syste

    defines a backplane interface, though this is not as wi

    IEEE 1394 was adopted as the High-Definition Audi

    (HANA) standard connection interface for A/V (audi

    communication and control. FireWire is also availabl

    coaxial versions using the isochronous protocols.

  • 8/9/2019 NEW SEMI_topicEC

    10/12

    Introduction

    Light Emitting Polymers

    Organic light emitting diode (OLED) display technol

    headlines in recent years. Now one form of OLED di

    POLYMER (LEP) technology is rapidly emerging as

    generation flat panel displays. LEP technology promi

    emissive displays with low drive voltage, low power

    wide viewing angle, and fast switching times.

    One of the main attractions of this technology is the ctechnology with plastic-substrates and with a number

    techniques, which offer the possibility of roll-to-roll

    manufacturing.

    LEPs are inexpensive and consume much less power

    display. Their thin form and flexibility allows devices

  • 8/9/2019 NEW SEMI_topicEC

    11/12

    Introduction

    Liquid Crystal on Silicon(LCOS)

    Liquid Crystal on Silicon(LCOS) is a new micro

    scalable architecture and picture quality has man

    CRT,DLP,LCD. LCOS is digital technology so iprecisethan that of other analog based architectu

    beautiful video with high resolution ,speed ,qual

    other display.

    Liquid crystal on silicon (LCOS or LCoS) is a '

    technology typically applied in projection televi

    similar to DLP projectors; however, it uses liqui

    mirrors. This is contrary to LCD projectors whic

    LCoS, liquid crystals are applied directly to the

    with an aluminized layer, with some type of pas

    reflective.

  • 8/9/2019 NEW SEMI_topicEC

    12/12

    Introduction

    tri-gate transistor

    Transistors are the microscopic, silicon-based switches that pr

    digital worlds and are the fundamental building block of all se

    traditional planar transistors, electronic signals travel as if on

    has served the semiconductor industry well since the 1960s. B

    30 nanometers (billionths of a meter), the increase in current l

    require increasingly more power to function correctly, which gheat.

    Intel's tri-gate transistor employs a novel 3-D structure, like a

    sides, which allows electronic signals to be sent along the top

    vertical sidewalls as well. This effectively triples the area avai

    like turning a one-lane road into a three-lane highway, but wit

    operating more efficiently at nanometer-sized geometries, the

    delivering 20 percent more drive current than a planar design

    The tri-gate structure is a promising approach for extending th

    Intel announced in December 2001. The tri-gate is built on an

    silicon for reduced current leakage. This allows the transistor t

    dramatically reducing power consumption. It also incorporatesstructure for low resistance, which allows the transistor to be d

    is also compatible with the future introduction of a high K gat

    Intel researchers have developed "tri-gate" transistor design. T