Neuron-computer interface in Dynamic-Clamp experiments
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Transcript of Neuron-computer interface in Dynamic-Clamp experiments
Neuron-computer interfacein Dynamic-Clamp experiments
Anton V. Chizhov
A.F.Ioffe Physico-Technical Institute of Russian Academy Sciences,St.-Petersburg, Russia
Leaky integrate-and-fire model
Hodgkin-Huxley neuron model
Control parameters of neuron
Dynamic-clamp• Artificial synaptic current
• Artificial voltage-dependent current
• Synaptic conductance estimation
SLL iVtVgdtdVC ))((
resetVV TVV If then
Leaky Integrate-and-Fire neuron
V is the membrane potential; I is the input (synaptic) current, C is the membrane capacity; gL is the membrane conductance; Vrest is the rest potential; VT is the threshold potential; Vreset is the reset potential.
Lm g
C
resetLSLTLSL
L
VgiVVgiVC
g
//ln
Firing rate dependence on current (F-I-curve)
h
[Покровский, 1978]
φ≈0
rV(x) V(x+Δx)
im
jm
C
Внутри
Снаружи
V
gK
gNa
VNa
VrestVK
SLS iVVg )(
Set of experimental data for Hodgkin-Huxley approximations
Approximations forare taken from [L.Graham, 1999]; IAHP is from [N.Kopell et al., 2000]
Model of a pyramidal neuron
SAHPLHMADRNa iIIIIIIIdtdVC
HMADRNa IIIII ,,,,
)()(
,)(
)(
UyUy
dtdy
UxUx
dtdx
y
x
))(()()( ......... VtVtytxgI qp
Color noise model for synaptic current IS is the Ornstein-Uhlenbeck process:
)(2)(0 titidtdi
SSS
Model with noise
E X P Е R I М Е N Т
Control parameters of a neuron
electrodeIIEE IVVGVVGu )()( 00
IE GGs
Property: Neuron is controlled by two parameters[Покровский, 1978]
)()(V
hVhdtdh
h
)()(VmVm
dtdm
m
)()(V
nVndtdn
n
2
2
xVk
[Hodgkin, Huxley, 1952]
Voltage-gated channels kinetics:
SLLKK
NaNa
iVtVgVtVtVng
VtVtVhtVmgdttdVC
))(())()(,(
))()(,(),()(
4
3
E X P E R I M E N T
M O D E L
uVVsIVVGVVGi electrodeIIEES )()()( 0
)())(()(),( tIVtVtgtVIdtdVC el
SSSchannelsionic
),())(()(),( 0 tuVtVtstVIdtdVC channelsionic
S
S tgts )()(
,
)()()()( 0 tIVVtgtu elS
SS
The case of many voltage-independent synapses
Warning!The input in current clamp corresponds to negative synaptic conductance!
Current-clamp is here!
“Current clamp”,V(t) is registered
“Voltage clamp”,I(t) is registered
Whole-cell patch-clamp:Current- and Voltage-Clamp modes
const
• For artificial passive leaky channel gDC=const
• For artificial synaptic channel gDC(t) reflects the synaptic kinetics
• For voltage-gated channel gDC(V(t),t) is described by ODEs
Conductance clamp (Dynamic clamp):V(t) is registered,I(V,t) = gDC (V,t) (V(t)-VDC) is injected
Whole-cell patch-clamp:Dynamic-Clamp mode
“Current clamp”Conductance clamp (Dynamic clamp):I(V(t))=gDC (V(t)-VDC) is injected
Dynamic clamp for synaptic current
[Sharp AA, O'Neil MB, Abbott LF, Marder E. Dynamic clamp: computer-generatedconductances in real neurons. // J.Neurophysiol. 1993, 69(3):992-5]
)()( GABAGABA VVtgI nSgsseegtg GABA
ttGABAGABA 8,15,5,)( max
21//max 21
Dynamic clampfor spontaneous
potassium channels
Control
artificial K-channels
iittg
gdtdg
dtgd
)(
)(
12max
212
2
21
msms 200,5 21
mVVK 70
))(( KVVtgI
nSg 1max
u,A/cm2
s,m
S/cm
2
0 1 2 3
0.01
0.02
0.03
0.04
0.05
0.061101009080706050403020100
HzHz
(2.7;0.06)
(1.7;0.024)
Experiment: pyramidal cell of visual cortex
Model [Graham, 1999] for CA1 pyramidal neuron
u,mkA/cm2
s,m
S/c
m2
0 2 4 6 8 10
0.1
0.2
0.3
0.4
0.5
0.6 80
60
40
20
0
Hz
Dynamic clamp to study firing properties of
neuron
0 500 1000-80-60-40-20
020
V, m
V
t, m s0 500 1000
-80
-60
-40
-20
0
20
V, m
V
t, m s
Experiment
Model u=7.7 mkA/cm2
S=0.4 mS/cm2
u=1.7 mkA/cm2
S=0.024 mS/cm2u=2.7 mkA/cm2
S=0.06 mS/cm2
u=4 mkA/cm2
S=0.15 mS/cm2
Bottom point Top point
Divisive effect of shunting inhibition is due to spike thresholdsensitivity to slow inactivation of sodium channels
i
spikei
TTTT
ttVVVdtdV )(0
inhex GGRate
2
Total Response (all spikes during 500ms-step)
Only 1st spikes Only 1st interspike intervals
Hippocampal Pyramidal Neuron In Vitro
Dynamic clamp for voltage-gated current: compensation of INaP
[Vervaeke K, Hu H., Graham L.J., Storm J.F. Contrasting effects of the persistent Na+ current on neuronal excitability and spike timing, Neuron, v49, 2006]
Dynamic clampfor electric couplings
between real and modeled neurons
Medium electric conductance
High electric conductance
constgVVgI
)( modexp
Dynamic clamp for synaptic conductance estimations in-vivo
1s
20 mV
10 nS
5 nS
V
V
IA GGABA :
EGAMPA :
Эксперимент [Lyle Graham et al.]: Внутриклеточные измерения patch-clamp в зрительной коре кошки in vivo. Стимул – движущаяся полоска.
Preferred direction Null direction
«Firing-Clamp»- method of synaptic
conductance estimation
Idea: a patched neuron is forced to spike with a constant rate; gE, gI, are estimated from values of subthreshold voltage and spike amplitude.
Threshold voltage, VT Peak voltage, V P
1 ms
τ(V)
Dynamic Clamp
• is needed for measuring firing characteristics of neuron
• is needed for estimation input synaptic conductances in-vivo
• helps to create artificial ionic intrinsic or synaptic channels
Conclusions