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![Page 1: Microsemi RFIS GaN Product Introduction - …apps.richardsonrfpd.com/Mktg/pdfs/MicrosemiMTTS2012Rev2.pdf• Faster Rise time • More rugged • Simpler Assembly • Smaller Size .](https://reader034.fdocuments.in/reader034/viewer/2022051602/5b07a6f07f8b9a520e8b701f/html5/thumbnails/1.jpg)
Power Matters.
Microsemi RFIS GaN Product Introduction
© 2012 Microsemi Corporation. CONFIDENTIAL
MTT-S Montreal 2012 Jerry W. Chang Director of Engineering
![Page 2: Microsemi RFIS GaN Product Introduction - …apps.richardsonrfpd.com/Mktg/pdfs/MicrosemiMTTS2012Rev2.pdf• Faster Rise time • More rugged • Simpler Assembly • Smaller Size .](https://reader034.fdocuments.in/reader034/viewer/2022051602/5b07a6f07f8b9a520e8b701f/html5/thumbnails/2.jpg)
RFIS
2
• GaN Technology Advantages
• Microsemi GaN Power Transistor Offering
• Five Featured Products
Microsemi - Agenda
• Summary
©2012 Microsemi • Proprietary & Confidential
• Microsemi GaN Amplifier Offering
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Material Property Si SiC GaN
Band Gap (eV) 3 Times Silicon
1.1 3.2 3.5
Critical Field (106 V/cm) Ten Times Silicon
0.3 3 3.3
Thermal Conductivity (Watt/cm2-K) 3 Times Silicon
1.5 4.9 >1.5
High operating temperature. High voltage operation, higher power output and wider bandwidth. Higher Power Per part
GaN and SiC - higher power, higher frequency, longer pulses and duty cycle capabilities than Silicon:
Capability System Benefit
Increase reliability Reduce maintenance costs Extend system range with High power wide band amplifiers Reduce part size / eliminate cooling requirements
3X
10X
3X
GaN and SiC Material Property Advantages for Pulsed Applications
©2012 Microsemi • Proprietary & Confidential
![Page 4: Microsemi RFIS GaN Product Introduction - …apps.richardsonrfpd.com/Mktg/pdfs/MicrosemiMTTS2012Rev2.pdf• Faster Rise time • More rugged • Simpler Assembly • Smaller Size .](https://reader034.fdocuments.in/reader034/viewer/2022051602/5b07a6f07f8b9a520e8b701f/html5/thumbnails/4.jpg)
RFIS
4
Investing in Future Technology Leadership
10
100
1000
10000
Power (W)
1 10 100
Frequency (GHz)
GaAs
Vacuum Tubes
Silicon
InP SiGe
SiC
GaN
©2012 Microsemi • Proprietary & Confidential
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RFIS
5
S-Band 2.7 – 2.9GHz,14 dB Gain, 300W Module
Output TR x2
Driver x1
Before
GaN Power
Now
One GaN replaces three Si BJT transistors
©2012 Microsemi • Proprietary & Confidential
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RFIS
6
Now Future
+
S-Band 2.7 – 2.9GHz,14 dB Gain, 300W Module
©2012 Microsemi • Proprietary & Confidential
GaN Power Advantages –
• Higher Power • Higher Gain • Higher Efficiency • Faster Rise time • More rugged • Simpler Assembly • Smaller Size
![Page 7: Microsemi RFIS GaN Product Introduction - …apps.richardsonrfpd.com/Mktg/pdfs/MicrosemiMTTS2012Rev2.pdf• Faster Rise time • More rugged • Simpler Assembly • Smaller Size .](https://reader034.fdocuments.in/reader034/viewer/2022051602/5b07a6f07f8b9a520e8b701f/html5/thumbnails/7.jpg)
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III Avionics Broad Band Data Link
IV Communication
II Avionics Mode-S ELM
I Avionics Mode-S, IFF, Transponder
V Radar Air Traffic Control
Featured Product
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For Avionics - Mode-S, IFF, Transponder
MDS1400
Featured Product I
Freq – 1030 MHz Pout – 1400 W Efficiency – 50% Si BJT
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Avionics Bipolar Products
TCAS (1030MHz,32us,2%)
TCS1200
TCS800
TCS450
TACAN (960-1215, 10us, 10%)
TAN500
TAN350
MS2267/TAN250A
TAN150
TRANSPONDER (1090MHz, 10us, 1%)
TPR1000
TPR700
MS2206
DME
(1025-1150, 10us, 1%)
DME800
DME500
MS2554
SD1536-08
MODE-S (1030, .5/.5, x128,1%)
MDS1100
MDS800
MDS400
Mode-S ELM (1030, 32/18 x42, 6%)
MDS500L
MDS280L
MDS140L
MDS60L
©2012 Microsemi • Proprietary & Confidential
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RFIS
10 Proprietary & Confidential 10
MDS1400 Power Curve
Pout vs Pin (Vcc=52V)
600
700
800
900
1000
1100
1200
1300
1400
1500
40 50 60 70 80 90 100 110 120 130 140 150 160 170
Pin(W)
Pout
(W)
New,Burst,N=1New; 32us(2%)New,Burst,N=37old, Burst,N=1old, Burst,N=37
• New vs. Old - Transfer Curve
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RFIS
11 Proprietary & Confidential 11
Avionics 1400W, 32us, 2%
• Capable of Delivering >1400W Pout
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For Avionics - Mode-S ELM
1011GN-700ELM
Featured Product II
![Page 13: Microsemi RFIS GaN Product Introduction - …apps.richardsonrfpd.com/Mktg/pdfs/MicrosemiMTTS2012Rev2.pdf• Faster Rise time • More rugged • Simpler Assembly • Smaller Size .](https://reader034.fdocuments.in/reader034/viewer/2022051602/5b07a6f07f8b9a520e8b701f/html5/thumbnails/13.jpg)
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Avionics – 1030MHz, Mode-S ELM
Company Confidential
32us (on) / 18 us (off), x 48, Period=24 ms
MDS500L – Si BJT
1011GN-700 ELM – GaN
©2012 Microsemi • Proprietary & Confidential
Freq (MHz) Pin (W) Pout (W) Gp (dB) Efficiency (%)
1030 60 525 9.4 57
Freq (MHz) Pin (W) Pout (W) Gp (dB) Efficiency (%)
1030 5 720 21 72
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Avionics – 1030MHz, Mode-S ELM
Company Confidential ©2012 Microsemi • Proprietary & Confidential
Typical RF Performance Data Frequency Pin (W) Pout (W) Id (A) RL (dB) Nd (%) G (dB) Trise(ns) Tfall(ns) 1030 MHz 5 730 0.95 -15 75 21.6 25 20
• High Power >700W • High Efficiency >70% • High Gain >20 dB • Mode-S ELM pulse • Small Size – Single Ended • GaN Technology
1030MHz, 65V, Mode-S ELM pulse #1
0
100
200
300
400
500
600
700
800
900
0 1 2 3 4 5 6 7
Pin (W)
Po
ut (
W)
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
Dra
in E
ff (
%)
Pout
Drain Eff
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RFIS
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For Broad Band Avionics – Data Link
0912GN-250 0912GN-500
Featured Product III
• 960-1215MHz, 128us, 10% • 17 dB Power Gain, 250W / 500W Power • TACAN, JTIDS, DME, TCAS, Mode-S
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RFIS
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For Broad Band Communication
1020GN-60CW
Featured Product IV
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RFIS
17
Sneak Preview – L-Band Transistor
Broad Band, 1-2GHz, 60W CW
Freq(GHz) Pin(W) Pout(W) Gp(db) Id(A) Efficiency
1 3.5 73 13.1 3.69 41%
1.2 3.5 61 12.4 2.82 45%1.5 3.5 58 12.2 2.27 53%1.8 3.5 67 12.8 2.96 47%2 3.5 56 12.0 2.56 46%
Company Confidential ©2012 Microsemi • Proprietary & Confidential
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For Radar – Air Traffic Control
2729GN-400 2729GN-500
Featured Product V
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19
2729GN-400
Single S-Band Transistor => 400W Freq (GHz)
Pin (W) Pout (W) Gp (dB) Effi(%)
2.7 28.2 415 11.7 50
2.8 28.2 418 11.7 55
2.9 28.2 422 11.8 57 Model 2729GN-400:
Vdd= 65V, Idq=750mA_pk, 100uS @ 10%
0
100
200
300
400
500
14 16 18 20 22 24 26 28 30 32 34
Pin (W)
Pout
(W)
10
12
14
16
18
Gai
n (d
B)
2.7 GHz
2.8 GHz
2.9 GHz
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20
Model 2729GN-500Vdd = 65V, Idq = 800mA_pk, 100uS @ 10%
0
100
200
300
400
500
600
10 12 14 16 18 20 22 24 26 28 30 32 34
Pin (W)
Pout
(W)
10
12
14
16
18
20
22
Gai
n (d
B)
2.7 GHz
2.8 GHz
2.9 GHz
Freq (GHz)
Pin (W) Pout (W) Gp (dB) Effi (%)
2.7 31.6 531 12.3 50
2.8 31.6 520 12.2 52
2.9 31.6 528 12.2 56
2729GN-500
20 © 2012 Microsemi Corporation. COMPANY PROPRIETARY
Single S-Band Transistor => 500W
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For Radar – Air Traffic Control
2729GN-1000P
Featured Product VI
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1.2 – 1.4 GHz, 330us, 10%, +50V, 800W
©2012 Microsemi • Proprietary & Confidential
1214-800P L-Band Pallet
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RFIS
23
1KW Amplifier with 6” x 6” x 1”
©2012 Microsemi • Proprietary & Confidential
S-Band GaN Amplifier
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RFIS
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2.7 – 2.9 GHz, 100us, 5%, 1000W, 3” x 3” x.25”
©2012 Microsemi • Proprietary & Confidential
S-Band GaN 1000W Pallet
Model 2729GN-1000Vdd = 65V, Idq = 2A_pk, 100us 5%
0
200
400
600
800
1000
1200
10 20 30 40 50 60 70
Pin (W)
Po
ut (
W)
10
12
14
16
18
20
22
Ga
in (
dB
)
2.7 GHz
2.8 GHz
2.9 GHz
![Page 25: Microsemi RFIS GaN Product Introduction - …apps.richardsonrfpd.com/Mktg/pdfs/MicrosemiMTTS2012Rev2.pdf• Faster Rise time • More rugged • Simpler Assembly • Smaller Size .](https://reader034.fdocuments.in/reader034/viewer/2022051602/5b07a6f07f8b9a520e8b701f/html5/thumbnails/25.jpg)
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25
S-Band Power of Excellence!
W
1000
900
800
700
600
500
400
300
200
100
Si-170
Si-300P GaN-300 GaN-400
GaN-500
GaN-1000P
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Summary
The GaN Revolution Has Officially Begun!
©2012 Microsemi • Proprietary & Confidential
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27
High Power GaN Amplifier
![Page 28: Microsemi RFIS GaN Product Introduction - …apps.richardsonrfpd.com/Mktg/pdfs/MicrosemiMTTS2012Rev2.pdf• Faster Rise time • More rugged • Simpler Assembly • Smaller Size .](https://reader034.fdocuments.in/reader034/viewer/2022051602/5b07a6f07f8b9a520e8b701f/html5/thumbnails/28.jpg)
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28
GaN Product Offering
Transistor
Paired TR Pallet - Ease of Use, 50 ohm Plug-N-Play
- Platform Transistor
Multi TR Module
High Power Amp
- High Gain Driver, isolator included
- Connectorized High Gain High Power
Company Confidential ©2012 Microsemi • Proprietary & Confidential
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RFIS
29
High Power GaN Amplifiers
29
Gallium Nitride (GaN) Employs latest semiconductor technologies Multi-octave amplifiers and application specific narrow band amplifiers
currently cover frequencies to 18 GHz. High Efficiency and High Power Density achieved Catalog designs offer power levels up to 100 Watts; custom designs for
non-catalog frequency bands are available.
© 2011 Microsemi Corporation. CONFIDENTIAL
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GaN Amplifier Offering
© 2011 Microsemi Corporation. CONFIDENTIAL 30
Model Number
Frequency (GHz)
Gain (dB
min)
Psat (dBm min)
Psat (Watts
typ) DC Power PAE ECCN
AML056P4511 0.5 - 6.0 45 39 10 28V/1.3A 25% EAR99
AML056P4512 0.5 - 6.0 45 43 25 40V/2.7A 23% EAR99
AML26P4012 2.0 - 6.0 45 43 25 28V/3.0A 30% EAR99
AML26P4013 2.0 - 6.0 50 46 50 28V/6.0A 30% EAR99
AML59P4512 5.5 - 9.0 45 45 40 28V/4.0A 35% 3A001.b.4.b
AML59P4513 5.5 - 9.0 45 48 80 28V/8.0A 35% 3A001.b.4.b
AML811P5011 7.8 - 11.0 45 43 25 28V/2.8A 30% 3A001.b.4.b
AML811P5012 7.8 - 11.0 50 46 50 28V/5.5A 30% 3A001.b.4.b
AML811P5013 7.8 - 11.0 50 48 80 28V/11.5A 25% 3A001.b.4.b
AML1416P4511 14.0 - 16.0 45 42 20 30V/3.2A 20% ITAR
AML1416P4512 14.0 - 16.0 45 45 40 30V/6.2A 20% ITAR
AML618P4014 6.0 - 18.0 40 39 10 32V/2.8A 12% ITAR
AML618P4015 6.0 - 18.0 40 42 20 32V/4.9A 12% ITAR
AML218P4012 2.0 - 18.0 35 37 6 32V/1.5A 13% ITAR
AML218P4011 2.0 - 18.0 40 39 10 32V/2.5A 12% ITAR
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RFIS
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GaN Amplifier Product Offering
© 2011 Microsemi Corporation. CONFIDENTIAL 31
Catalog GaN amplifiers feature internal TTL Control for DC On/Off Duty Cycle up to 100% Switching Speed: 50% TTL – 90% / 10% Turn-On: 250 ns nom Turn-Off: 500 ns nom DC Consumption typically reduced by 90% Faster Switching Available Measured data on 2-18 GHz 10 Watt PA
Parameter Measured
Turn-On Time 163.5 ns
Rise Time 30.5 ns
Turn-Off Time 389 ns
Fall Time 90 ns
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RFIS
32
GaN 2-18 GHz 8-10 Watts PA
© 2011 Microsemi Corporation. CONFIDENTIAL 32
36
37
38
39
40
41
42
43
2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18
P5d
B (d
Bm
)
Freq(Ghz)
Pout vs .Frequency
P5dB_32V
P5dB_35V
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RFIS
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POWERING A SMART SECURE CONNECTED WORLD
Thank You – Questions?