Micron Technology Building Memory Chips Rob Miller Test Engineer.
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Transcript of Micron Technology Building Memory Chips Rob Miller Test Engineer.
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Micron TechnologyBuilding Memory Chips
Rob MillerRob Miller
Test EngineerTest Engineer
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Storage and Memory The most widely used form of electronic
memory is Random Access Memory (RAM). RAM memory allows computers to directly store and retrieve bits of information from unique addresses.
Micron is a major manufacturer of RAM , including DRAM and SRAM. DRAM makes-up 95% of our business.
DRAM needs to be refreshed
SRAM does not need to be refreshed
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What DRAM Really Looks Like
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Elements and Atoms
Elements are the simplest forms of matter encountered in a laboratory. No matter how hard we try, an element cannot be purified into a simpler (stable) substance through chemical means.
An Atom is the smallest piece of an element which still retains its original chemical identity. They are often referred to as the “building blocks” of an element.
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3
LiLithium
6.941
11
NaSodium
22.99
19
KPotassium
39.10
37
RbRubidium
85.47
55
CsCesium
132.9
87
FrxFrancium
(223)
4
BeBeryllium
9.012
12
MgMagnesium
24.31
20
CaCalcium
40.08
38
SrStrontium
1.008
56
BaBarium
137.3
88
Raxradium
226.0
21
ScScandium
44.96
39
YYttrium
88.91
57
LaLanthanum
138.9
89
AcxActinium
(227)
22
TiTitanium
47.90
40
ZrZirconium
91.22
72
HfHafnium
178.5
104
Unqx(261) 105
Unpx(262)
73
TaTantalium
180.9
41
NbNiobium
92.91
23
VVanadium
50.94 24
CrChromium
52.00
42
MoMolybdenum
95.94
74
WTungsten
183.9
106
Unhx(263) 107
Unsx(262)
75
ReRhenium
186.2
43
TcxTechnetium
98.91
25
MnManganese
54.94 26
FeIron
55.85
44
RuRuthenium
101.1
76
OsOsmium
190.2
108
Unox(265) 109
Unex(266)
77
IrIridium
192.2
45
RhRhodium
102.9
27
CoCobalt
58.93 28
NiNickel
58.71
46
PdPalladium
106.4
78
PtPlatinum
195.1 79
AuGold
197.0
47
AgSilver
107.9
29
CuCopper
63.55 30
ZnZinc
65.37
48
CdCadmium
112.4
80
HgMercury
200.6 81
TlThallium
204.4
49
InIndium
114.8
31
GaGallium
69.72
13
AlAluminum
26.98
5
BBoron
10.81 6
CCarbon
12.01
14
SiSilicon
28.09
32
GeGermanium
72.59
50
SnTin
118.7
82
PbLead
207.2 83
BiBismuth
209.0
51
SbAntimony
121.8
33
AsArsenic
74.92
15
PPhosphorous
30.97
7
NNitrogen
14.01 8
OOxygen
16.00
16
SSulfur
32.06
34
SeSelenium
78.96
52
TeTellurium
127.6
84
PoxPolonium
(210) 85
AtxAstatine
(210)
53
IIodine
126.0
35
BrBromine
79.90
17
ClChlorine
35.45
9
FFluorine
19.00 10
NeNeon
20.18
2
HeHelium
4.003
18
ArArgon
39.95
36
KrKrypton
83.80
54
XeXenon
131.1
86
RnxRadon
(222)
(1)*I A
(2)II A
(3)III B
(4)IV B
(5)V B
(12)II B
(11)I B
(7)VII B
(6)VI B
(13)III A
(14)IV A
(15)V A
(16)VI A
(17)VII A
(18)NobleGases
VIII B(10)(8) (9)
1
HHydrogen
1.008
58
CeCerium
140.1
90
ThxThorium
232.0
59
PrPraseodymium
140.9
91
PaxProtactinium
231.0
60
NdNeodymium
144.2
92
UxUranium
238.0
61
PmxPromethium
(147)
93
NpxNeptunium
237.0
62
SmSamarium
150.4
94
PuxPlutonium
(244)
63
EuEuropium
152.0
95
AmxAmericium
(243) 96
CmxCurium
(247)
64
GdGadolinium
157.3 65
TbTerbium
158.9
97
BkxBerkelium
(247) 98
CfxCalifornium
(251)
66
DyDysprosium
162.5
99
EsxEinsteinium
(254)
67
HoHolmium
164.9
100
FmxFermium
(257)
68
ErErbium
167.3
101
MdxMendelevium
(258)
69
TmThulium
168.9
102
NoxNobelium
(255) 103
LrxLawrencium
(256)
70
YbYtterbium
173.0 71
LuLutetium
175.0
Lanthanides
Actinides
1
HHydrogen
1.008
RepresentativeElements
TransitionElements
Inner-TransitionElements
NobleGases
Atomic Number
Name of Element
Aymbol of Element
Atomic Weight
x: All isotopes are radioactive.
( ) Indicates mass number of isotope with longest known half-life.
* Number in ( ) heading each column represents the group designation recommended by the ACS Committee on Nomenclature.
The Periodic Table of Elements
1
2
3
4
5
6
7
Period
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Protons, Neutrons, and Electrons Although the Bohr Model does not completely
explain all aspects of chemistry, we can use it to discuss basic chemical rules which govern the reactions of the atoms and elements.
Protons (+)
Neutrons (0)
Electrons (-)
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Atomic Rule 1
Rule 1 states that in each atom of an element there is an equal number of protons and electrons.
If we know that Boron (B) has five protons, then an atom of Boron also
has five electrons which makes it neutral. It is possible for an atom to lose or gain an
electron, but the protons are confined to the nucleus. If an atom gives up or
accepts an electron, then the atom loses its neutrality and becomes an ion.
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Atomic Rule 2
Rule 2 states that each atom of an element contains a specific number of protons in the nucleus and different elements have a different number of protons.
All Oxygen (O) atoms contain eight protons.
O8 16.00
O xygen
Atom ic Num ber(# of protons)
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Atomic Rule 3
Rule 3 states that elements with the same number of outer orbital electrons (“valance” electrons) have similar properties.
Electrons are placed in orbits around the nucleus of the atom. The first orbital will take a maximum of two electrons before it repels additional electrons to the next shell. The second orbital will take a maximum of eight electrons
before forcing the remaining electrons to the next shell.
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Atomic Rule 4
Rule 4 states that elements are stable when their atoms have a filled outer orbital.
The atoms of elements which appear in the far right column of the Periodic Table (He, Ne, ...) have filled outer orbitals.
These stable elements are called “Noble” or “Inert” gases. All other atoms found on the Periodic Table are considered unstable because they do not have filled outer orbitals.
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Atomic Rule 5
Rule 5 states that atoms seek to combine with other atoms to create the stable condition of filled orbits through the sharing of electrons (“covalent bond”).
Rules 4 and 5 help scientists predict the reaction of a particular atom when it is introduced to another atom. Atoms with incomplete outer orbitals can combine with similar atoms or with atoms of different elements.
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Atomic Rule 5 Continued
H1 p
H1 p
O8p
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Conductors Electrical conduction takes place in elements
and materials where the attractive hold of the electrons by the protons is relatively weak.
Extent to which materials conduct electricity is
measured by a factor known as conductivity.
This condition exists in most metals because the valence electrons are so far from the nucleus.
Examples of conductive materials used at Micron include Tungsten (W), Titanium (Ti) and Aluminum/Copper (Al/Cu).
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Dielectrics
Resistive materials are known as dielectrics (or insulators).
Dielectric materials are used in electric circuits to prevent conduction from passing between two conductive components.
Two examples of insulators used in the fabrication process include Oxide and Nitride layers.
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Semiconductors
Semiconductors are materials that exhibit only partial electrical conduction. Their ability to conduct lies somewhere between a metal and an insulator.
Silicon is the mainstream material used in the fabrication of memory devices like transistors and capacitors. This is primarily due to the beneficial characteristics of Silicon. Silicon has a very high melting point compared to other semiconductors (like Germanium).
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Silicon Chemistry
Germanium versus
Silicon– less expensive– abundant – a higher melting point (1420c vs 990c)– grows a more stable and uniform oxide layer
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Silicon Purification
First stage of wafer fabrication is the chemical purification of Silicon found in common beach sand.
Although Silicon is the second most abundant element in the earth’s crust, it never occurs in nature alone as an element.
Instead it occurs in the form of Silica, which is a combination of Silicon and different elements.
This Silica compound must be processed to yield Silicon that is 99.999999999% pure.
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Silicon Wafers
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Intrinsic Silicon
Silicon has four valence electrons. When a group of Silicon atoms bond together to produce a pure lattice structure, the material is referred to as Intrinsic Silicon.
Si
Si
Si
Si
Si
Si
Si
Si
Si
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Silicon Doping
This pure silicon configuration (intrinsic silicon) is a poor conductor because none of its electrons are available to serve as carriers of electric charge.
The fabrication of integrated circuits requires that the substrate (the wafer surface) be somewhat conductive.
This process is known as doping. Boron (B), Phosphorus (P), and Arsenic (As) are the most common dopant atoms used in the industry.
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Dopant Chemistry
By looking at the Periodic Table, we can determine the number of electrons that Boron and Phosphorus have in their outer orbit.
B P
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Si Si Si
Si Si Si
Si P Si
N-Type
P
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P-Type
Si Si Si
Si Si Si
Si B Si
B
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One Die or Chip
Anatomy of a Anatomy of a Memory ChipMemory Chip
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Building Blocks of Building Blocks of
the DRAM memory the DRAM memory
cellcell
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Basic DRAM memory cell - 1TBasic DRAM memory cell - 1T
C olum n or B itline
Ro
w o
r W
ord
line
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Transistor A small electronic device constructed on a
semiconductor (WAFER) and having a least three electrical contacts (SOURCE, GATE, AND DRAIN), used in a circuit as an
amplifier, a detector, or a SWITCH.
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Capacitor An electric circuit element used to temporarily
STORE a charge, consisting of TWO
CONDUCTIVE plates separated and insulated
from each other by a DIELECTRIC.
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The Transistor
The first component of the memory cell is a
transistor. While the capacitor stores
electronic bits of information, the transistor
controls the access to that information.
Micron uses mostly Enhancement Mode-N-
Channel- Metal-Oxide-Semiconductor-Field-
Effect-Transistors (MOSFET).
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The Transistor(continued)
Doing the dishes requires that we access a Source
(or reservoir) of water.
Channel (or pipe) connects the reservoir to the sink.
Don’t want a continuous flow of water to our drain
(or sink). . .
Need a gate (or valve) to block the water flow.
ReservoirWater
Channel
Gate
Source
Drain
Sink
ClosedGate Reservoir
Water
Gate
Source
Drain
Sink
OpenGate External
Energy(voltage)
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MOSFET-Gate, Source, Drain Metal-Oxide-Semiconductor-Field-Effect-Transistors
A MOSFET is composed of three main components; a gate, a source, and a drain. The gate is a physical structure built on the wafer surface to control the opening and closing of a source-to-drain channel. To create this structure, a metal and oxide layer are formed on a semiconductor surface (MOS). The source and drain regions are just highly doped, shallow pockets in the wafer surface next to the gate.
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P-type substrate
OxideMetal/Poly
P-type substrate
P-type substrate
n-region
Source/DrainCreated
VoltageAppliedn-regionn-region
++++++++++++++
++++++++++-+++-++
-++-+
+5 or 3 volts
N-channelAppearsn-regionn-region
+++++++
++++++++++++++++
+5 or 3 volts
- - - - - - - - - - -
N-Channel MOSFETN-Channel MOSFETMetal-Oxide-Semiconductor-Field-Effect-Transistors
n-region
+++++++
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N-type substrate
OxideMetal/Poly
N-type substrate
N-type substrate
p-region
Source/DrainCreated
VoltageAppliedp-regionp-region
- - - - - - - - - - - - - -
- - - - - - - - -+ - - - + - -+ - - + -
- 5 or 3 volts
P-channelAppearsn-regionn-region
- - - - - - -
- - - - - - - - - - - - - - -
- 5 or 3 volts
+ + + + + + + + + +
P-Channel MOSFETP-Channel MOSFETMetal-Oxide-Semiconductor-Field-Effect-Transistors
p-region
- - - - - - -
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C = k A d
CapacitanceC =
d =
k =
A=
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C = k A d
CapacitanceC = Capacitance
The measurement of a capacitor’s ability to store acharge
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C = k A d
CapacitanceC = Capacitance
d = Distance between the cell plates
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C = k A d
CapacitanceC = Capacitance
d = Distance between the cell plates
k = Dielectric constant
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C = k A d
CapacitanceC = Capacitance
d = Distance between the cell plates
k = Dielectric constant
A= Surface area of cell plates
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Capacitor
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conductive plate
conductive plate
Capacitor
dielectric
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Wet Gate Oxide
Native Oxide
Insitu poly
Cell Nitride
Combo Poly
conductive plate
conductive plate
Capacitor
dielectric
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C = k A d
CapacitanceC = Capacitance
d = Distance between the cell plates
k = Dielectric constant
A= Surface area of cell plates
As the surface area (A) increases, capacitance (C) also increases. IfMicron had continued to fabricate planar capacitors, increasing thecapacitance in this manner would have greatly increased the size andcost of our microchips. To save valuable wafer real estate, whileincreasing capacitance, and shrinking our die size, we have moved to“Ministack” and “Container Cell” processing. These structuresincrease capacitance by stacking the cell plates rather than buildingthem out across the wafer surface.
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W et G ate O x
D ie lectric C ell N itride
N ative O xide
C onta iner C e ll - C om bo P o ly17 M asking Leve l
Top C e ll P la te - Ins itu P o ly3(52 M asking Leve l)
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C = k A d
CapacitanceC = Capacitance
d = Distance between the cell plates
k = Dielectric constant
A= Surface area of cell plates
Other efforts to improve memory cell capacitance haveincluded reductions in the dielectric thickness andthe selective use of Silicon Nitride rather than SiliconDioxide as the main dielectric material (k).
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What It Really Looks Like
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DRAM memory ArrayDRAM memory Array
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Reading and Writing Think of a memory chip as a grid or array of capacitors located at
specific rows and columns. If we choose to read the memory cell located at row 3, column 5, we will retrieve information from a specific capacitor. Every time we go to row 3, column 5, we will access or address the same capacitor and obtain the same result (1) until the capacitive charge is changed by a write process.
1
0
110100
0 1 1 1 0 1
0 1 1 0
1 0 0 0
011
1
1
1
1 0 1
1
0
0
0 0
1 1 1 0 1 0
0 1 0 1 1 0 1
Ro
ws
1
2
3
4
5
6
7
1 2 3
4
4 75 6
Colum ns
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DRAM Memory Cell
1 Bit1 Bit
Capacitor
Gate or Row Line
Column Line
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READ
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WRITE
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