Mgit Multi Level

download Mgit Multi Level

of 60

Transcript of Mgit Multi Level

  • 7/29/2019 Mgit Multi Level

    1/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 1

    Over View ofMulti level inverters

    By

    Dr.K.KrishnaveniProfessor and Head

    Dept. of EEE ,CBIT

  • 7/29/2019 Mgit Multi Level

    2/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    OUTLINE

    IntroductionVarious types of multi level Inverters

    --Diode clamped

    --Capacitor clamped--Cascaded

    Switching logic in multilevel invertersComparison

    Single phase H-bridge(special case)ApplicationsConclusion

    3/5/2013 2

  • 7/29/2019 Mgit Multi Level

    3/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 3

    Introduction

    Wave forms of practical inverters are non-sinusoidal & contain

    certain number of harmonics.

    For low and medium power applications square wave or quasisquare wave voltage may be acceptable.

    But for high power applications, sinusoidal wave forms withlow distortion are required.

    Harmonic contents present in the output of a dc-ac inverter can

    be eliminated by employing a filtering circuit or by employingPWM technique.

  • 7/29/2019 Mgit Multi Level

    4/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Use of filters has the disadvantage of large size and cost,

    PWM technique reduces the filter requirement to minimum orzero depending on the type of application.

    Traditional two-level PWM Inverter have some drawbacks,namely

    1.More switching losses.2.Intro.. of large amount of higher order harmonics.

    3.large dv/dt rating.

    4.Common mode voltages.

    5.Problem of voltage sharing series connected devices.

    6.Requirement of switches with very low turn-on and

    turn-off times.

    3/5/201302/11/2009 4

  • 7/29/2019 Mgit Multi Level

    5/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 5

    To overcome the mentioned problems Multi-level Inverterscan be employed.

    In addition to the above they offer the advantage of less

    switching stress on the device for high voltage, high power

    applications with reduced harmonic content at low switching

    frequencies.

    This seminar presents the basic description of 2-level,3-level

    and 5-level inverters (and also presents the methodology for

    switching loss calculations).

    Modulation technique for 2,3,5 level Inverters & finally

    comparison will be shown for the topologies on the basis of

    switching losses &THD at different switching frequencies.

  • 7/29/2019 Mgit Multi Level

    6/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 6

    Switching circuits of Multi level Inverters

    One phase leg of an inverter with (a) two levels, (b) three levels,

    and (c) n levels

    .

  • 7/29/2019 Mgit Multi Level

    7/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 7

    Switching circuits of Multi level Inverters

    Output voltage profile of (a) 2-level, (b) 3-level, and (c) 5-level

    inverter.

  • 7/29/2019 Mgit Multi Level

    8/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 8

    Basics of two-level Inverters It is the most widely used topology in various low and medium

    power applications. The full-bridge configuration of three-phase VSI is shown in the

    below figure.

    Figure 1: Three-phase two-level inverter.

  • 7/29/2019 Mgit Multi Level

    9/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 9

    The switching logic to obtain the output voltage for a 120

    degrees mode of operation is shown in below table

  • 7/29/2019 Mgit Multi Level

    10/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 10

    This topology can be used at very high switching frequencies to

    obtain low THD by using PWM technique.

    Disadvantages in two-Level:

    Power devices are to be connected in series-parallel to achieve a

    large power capability, but they suffer from static and dynamicvoltage sharing problems in series & parallel connection of power

    devices.

    High rate of change of voltage due to synchronous commutation

    of series devices.

    In addition to above, high switching frequencies and harmonic

    contents in inverter output voltage.

  • 7/29/2019 Mgit Multi Level

    11/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 11

    Types of Multilevel Inverters

    Commonly employed multilevel inverter topologies are:

    1.Diode clamped2.Capacitor clamped

    3.Cascaded Multi-Level

    In all these topologies, the output voltage is synthesized for

    several levels of input voltages obtained from several capacitorsconnected across the dc bus.

    In capacitor clamped both real and reactive power can be

    controlled, but it suffers from high switching losses due to real

    power transfer & also it requires high no. of storage capacitors athigher levels.

    Even a cascaded inverter uses a large no. of separate dc sources

    for each of the bridges.

  • 7/29/2019 Mgit Multi Level

    12/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Advantages/merits of diode clamped

    3/5/2013 12

    Hence the diode clamped topology is considered for the study, In

    this all the devices are switched at fundamental frequency

    resulting in low switching losses and high efficiency.

    Another advantage of this topology are controlled reactive power

    flow between source and load ,much better dynamic voltage

    sharing among switching devices.

    The control logic is simple ,especially for back- to- back inter tie

    connections of two systems.

    However, it requires a large number of clamping diodes for a

    large number of output voltage levels. To produce an m-level output phase voltage, (m-1) switches are

    required for each half phase leg, a total of (m-1) dc link

    capacitors for energy storage and(m-1)*(m-2) clamping diodes for

    each phase leg

  • 7/29/2019 Mgit Multi Level

    13/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 13

    Three-Level Diode Clamped Multilevel Inverter (DCMLI)

    Three-phase diode clamped three-level inverter (neutral pointclamped) topology is shown in below figure

  • 7/29/2019 Mgit Multi Level

    14/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 14

    Capacitor clamped Multilevel Inverters

    1. For voltage level Vdc/2 , switches S1and S2 need to be

    turned on

    2. For Vdc/2, switches S1and S2 need to be turned on3. For the 0 level, either pair(S1,S2 ) or(S2,S1 ) needs to

    be turned on.4. D1and D1 diodes clamp the switch voltage to half the

    level of dc voltage.

  • 7/29/2019 Mgit Multi Level

    15/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 15

    Three-Level Diode Clamped Multilevel Inverter (DCMLI)

    Three-phase diode clamped three-level inverter (neutral pointclamped) topology is shown in below figure

  • 7/29/2019 Mgit Multi Level

    16/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 16

    The circuit consists of two dc link capacitors, 12 power

    switches and six clamping diodes.

    The middle point of the dc bus capacitor is known as neutral

    point n.

    The main feature of this topology is clamping diodes that clamp

    the switch voltage to half of the dc bus voltage, reducing the

    voltage stress of the switching device.

    The output voltage has three different states: +, 0 and and thecorresponding output phase voltages are +Vdc/2, 0 and -Vdc/2.

  • 7/29/2019 Mgit Multi Level

    17/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 17

    Switching states to synthesize the output voltages for phase Aare defined in below table

  • 7/29/2019 Mgit Multi Level

    18/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 18

    Five-Level DCMLI

  • 7/29/2019 Mgit Multi Level

    19/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 19

    Five-Level DCMLI

  • 7/29/2019 Mgit Multi Level

    20/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 20

    Five-Level DCMLI

  • 7/29/2019 Mgit Multi Level

    21/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 21

    It consists of 24 power switches and 36 clamping diodes. The DC

    bus has four capacitors for a DC bus voltage Vdc.

    The voltage across each capacitor is Vdc/4. Thus, the voltage stress across each device will be limited to

    Vdc/4 through the clamping diode.

    The below table shows the switching combinations andcorresponding output phase voltage levels where switching state

    1 represents the switch is in on condition and state 0

    indicates the switch is in off condition.

    S i hi i f C i Cl d

  • 7/29/2019 Mgit Multi Level

    22/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 22

    Switching Logic for Capacitor Clamped

    C i Cl d M l il l I

  • 7/29/2019 Mgit Multi Level

    23/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 23

    Capacitor Clamped Multilevel Inverters

  • 7/29/2019 Mgit Multi Level

    24/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 24

    Switching Logic for Capacitor Clamped

  • 7/29/2019 Mgit Multi Level

    25/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 25

    Switching Logic for Capacitor Clamped

  • 7/29/2019 Mgit Multi Level

    26/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 26

    Cascaded multilevel inverter topology

  • 7/29/2019 Mgit Multi Level

    27/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 27

    Switching Loss Calculations

    Consider a single MOSFET switch connected across a dc

    voltage of value Vdc.

    Current through switch during on time is considered as Idc.

  • 7/29/2019 Mgit Multi Level

    28/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 28

    Switching losses can be calculated from the turn-on and turn-off

    characteristics of the devices. Instantaneous voltage and currentduring turn on time tc(on) are

    V(t)=Vdc-(Vdc-Von)*(t/tc(on)); 0

  • 7/29/2019 Mgit Multi Level

    29/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 29

    and energy dissipated during this interval is tc(on),

    Ec,on=[{Vdc*Idc*(t/tc(on))}-(Vdc-Von)*(t2/tc(on)2)]dt 0 to tc(on)Ec,on=(Vdc*Idc*tc(on))/2-(Vdc-Von)*Idc*tc(on)/3

    =(Vdc*Idcton)/6-(Von*Idc*tc(on))/3 (4)

    and during turn-off transition, of t c(off), the current falls from

    Idc to zero and the Von rises linearly to Vdc. The

    instantaneous voltage and current during this period are

    V(t)=Von+(Vdc-Von)/tc(off) (5)

    i(t)=Idc-Idc/tc(off) (6)

  • 7/29/2019 Mgit Multi Level

    30/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 30

    The instantaneous power dissipated during the interval tc(off) is

    P(t)=V(t)*i(t)

    ={Von+(Vdc-Von)*(t/tc(off))}*{Idc-Idc*(t/tc(off))}

    =Von*Idc+(Vdc-Von)*Idc*(t/tc(off))-Von*Idc*(t/tc(off))-(Vdc-Von)*Idc*(t2/tc(off)

    2)

    (7)Hence, the energy dissipated can be found as tc(off),

    Ec,off=[Von*Idc+(Vdc-Von)*Idc*(t/tc(off))-Von*Idc*(t/tc(on))-(Vdc-

    Von)*Idc*(t2/tc(off)2)]dt 0 tc(on)=(Vdc*Idc*tc(off))/6-(Von*Idc*tc(off))/3 (8)

  • 7/29/2019 Mgit Multi Level

    31/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 31

    With a switching frequency of Fs, the average switching loss in

    the switch during each transition of turn on and turn off can be

    found as

    Pc,on=(Vdc*Idc*tc(on)/Ts)/6+(Von*Idc*tc(on)/Ts)/3 (9)

    Pc,off

    =(Vdc

    *Idc

    *tc(off)

    /Ts

    )/6-(Von

    *Idc

    *tc(off)

    /Ts

    )/3 (10)

    Hence, the average switching loss Psw in the switch is

    Psw=(1/6)*Vdc*Idc*{tc(on)+tc(off)}/Ts+(1/3)*Von*Idc*{tc(on)+tc(off)}/Ts

    (11)

  • 7/29/2019 Mgit Multi Level

    32/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/2013 32

    Eqn. (11) shows that the switching power loss in a semiconductor

    switch varies linearly with the switching frequency and switchingtimes.

    Therefore, with the devices having short switching times, it ispossible to operate them at a higher switching frequency thus

    avoiding excessive switching power losses in the device .

    M d l ti t h i

  • 7/29/2019 Mgit Multi Level

    33/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Modulation technique

    The modulation or controlled techniques are classifiedbelow

    3/5/201302/11/2009 33

  • 7/29/2019 Mgit Multi Level

    34/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    SPWM technique is considered for the study in thisproject.

    In SPWM technique a triangular carrier wave is comparedwith the sinusoidal reference wave at fundamental output

    frequency.

    The below figure shows the generation of switching pulsesfor power device S

    1

    of the two level inverter

    3/5/2013 34

  • 7/29/2019 Mgit Multi Level

    35/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Figure 6: Pulse generation for two-level inverter (forswitch S1).

    3/5/201302/11/2009 35

  • 7/29/2019 Mgit Multi Level

    36/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    The below figure shows the switching pulses for power

    devices Sa1 and Sa2 of three level inverter

    3/5/201302/11/2009 36

  • 7/29/2019 Mgit Multi Level

    37/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/201302/11/2009 37

  • 7/29/2019 Mgit Multi Level

    38/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    The below figure shows the switching pulses for powerdevices Sa1,Sa2,Sa3 and Sa4 of five level inverter

    3/5/201302/11/2009 38

  • 7/29/2019 Mgit Multi Level

    39/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/201302/11/2009 39

    Simulation study of DCMLI with SPWM

  • 7/29/2019 Mgit Multi Level

    40/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Simulation study of DCMLI with SPWM

    Simulation studies have been performed on two, three and

    five diode clamped three phase inverters

    powergui

    Discrete,= 5e-005

    Total Harmonic

    Distorsion2

    signal THD

    Total Harmonic

    Distorsion1

    signal THD

    Total Harmonic

    Distorsion

    signal THD

    Three-PhaseV-I Measurement 3

    Vabc

    IabcA

    B

    C

    a

    b

    c

    Subsystem

    Series RLC Load 2

    Series RLC Load 1

    Series RLC Load

    Scope3

    Scope1

    Scope

    Product 2

    Product 1

    Product

    Mean Value

    InMean

    Goto

    voltages ]

    Gain 1

    -K-

    Gain

    -K-

    From8

    Von

    From7

    [s211]

    From4

    Iin

    From3

    Vin

    From2

    Iin

    From

    oltages ]

    Display1

    Display

    Add

    1Three -phase two-level inverter .

    A

    B

    c

    3/5/201302/11/2009 40

  • 7/29/2019 Mgit Multi Level

    41/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    powergui

    Discrete,= 5e-005

    Total Harmonic

    Distorsion2

    signal THD

    Total Harmonic

    Distorsion1

    signal THD

    Total Harmonic

    Distorsion

    signal THD

    Three -phase three -level diode clamped inverter .

    A

    B

    c

    Three-Phase

    V-I Measurement 3

    Vabc

    IabcA

    B

    C

    a

    bc

    Subsystem

    Series RLC Load 2

    Series RLC Load 1

    Series RLC Load

    Scope3

    Scope1

    Scope

    Product 2

    Product 1

    Product

    Mean Value

    InMean

    Goto

    [voltages ]

    Gain 1

    -K-

    Gain

    -K-

    From8

    Von

    From7

    s211

    From4

    Iin

    From3

    Vin

    From2

    Iin

    From

    oltages ]

    Display1

    Display

    Add

    3/5/201302/11/2009 41

  • 7/29/2019 Mgit Multi Level

    42/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    powergui

    Discrete,= 5e-005

    Total Harmonic

    Distorsion2

    signal THD

    Total Harmonic

    Distorsion1

    signal THD

    Total Harmonic

    Distorsion

    signal THD

    Three -phase five -level diode clamped inverter .

    C

    b

    A

    Three-PhaseV-I Measurement 3

    VabcIabc

    A

    B

    C

    a

    b

    c

    Subsystem

    Series RLC Load 2

    Series RLC Load 1

    Series RLC Load

    Scope3Scope1

    Scope

    Product 2

    Product 1

    Product

    Mean Value

    InMean

    Goto1

    [currents]

    Goto

    [voltages ]

    Gain 1

    -K-

    Gain

    -K-

    From8

    Von

    From7

    s11

    From4

    Iin

    From3

    Vin

    From2

    Iin

    From

    oltages ]

    Display1

    Display

    Add

    3/5/201302/11/2009 42

    Out put voltage of two level inverter

  • 7/29/2019 Mgit Multi Level

    43/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    p g

    3/5/201302/11/2009 43

    Frequency spectrum

  • 7/29/2019 Mgit Multi Level

    44/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Frequency spectrum

    3/5/201302/11/2009 44

    Pulse generation of two level inverter

  • 7/29/2019 Mgit Multi Level

    45/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Pulse generation of two level inverter

    3/5/201302/11/2009 45

    O/P voltage of three level inverter

  • 7/29/2019 Mgit Multi Level

    46/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    O/P voltage of three level inverter

    3/5/201302/11/2009 46

    Frequency spectrum

  • 7/29/2019 Mgit Multi Level

    47/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Frequency spectrum

    3/5/201302/11/2009 47

    Pulse generation for three level

  • 7/29/2019 Mgit Multi Level

    48/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Pulse generation for three level

    3/5/201302/11/2009 48

    Output voltage of five level inverter

  • 7/29/2019 Mgit Multi Level

    49/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Output voltage of five level inverter

    3/5/201302/11/2009 49

    Harmonic order

  • 7/29/2019 Mgit Multi Level

    50/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Harmonic order

    3/5/201302/11/2009 50

    Pulse generation for five level

  • 7/29/2019 Mgit Multi Level

    51/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Pulse generation for five level

    3/5/201302/11/2009 51

    THD and Switching losses

  • 7/29/2019 Mgit Multi Level

    52/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    THD and Switching losses

    3/5/201302/11/2009 52

  • 7/29/2019 Mgit Multi Level

    53/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/201302/11/2009 53

  • 7/29/2019 Mgit Multi Level

    54/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad3/5/201302/11/2009 54

  • 7/29/2019 Mgit Multi Level

    55/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Variation of switching losses and THD with carrier frequency for the three-level

    inverter.

    3/5/201302/11/2009 55

  • 7/29/2019 Mgit Multi Level

    56/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Variation of switching losses and THD with carrier frequency for a

    five-level inverter.

    3/5/201302/11/2009 56

  • 7/29/2019 Mgit Multi Level

    57/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Variation of switching losses for two-level, threelevel and five-level

    inverters with carrier frequency.

    3/5/201302/11/2009 57

  • 7/29/2019 Mgit Multi Level

    58/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    Variation of percentage THD for two-level, threelevel and five-level

    inverter with carrier frequency.

    3/5/201302/11/2009 58

    References

  • 7/29/2019 Mgit Multi Level

    59/60

    EEE Dept. CBIT, HyderabadEEE Dept. CBIT, Hyderabad

    References

    1.F. Z. Peng & J. S. 1. Lai, Multilevel Converters - A new breedof power converters,IEEE Transaction on Industry

    Applications, Vol. 32, No. 3, May/June, 1996, pp. 509-517.

    2. Jose Rodriguez, J. S. Lai & F. Z. Peng, Multilevel Inverters: ASurvey of Topologies, Controls, and Applications,IEEETransaction on Industrial Electronics, Vol. 49, No. 4, Aug

    2002, pp. 724-738.

    3. Mohan Ned, Undeland T.M. & Robbins W.P., PowerElectronics: Converters, Applications and Design, John Wileyand Sons, Second Edition, 2001.

    4. G. Bhuvaneswari & Nagaraju, Multilevel Inverters AComparative Study,IETE Journal of Research, Vol. 51, No.2,Mar-Apr 2005, pp.

    3/5/201302/11/2009 59

  • 7/29/2019 Mgit Multi Level

    60/60