MATCHED ION IMPLANTATION - ISPSD 2020 2020. 9. 9. · Energy-Filter For Ion Implantation (EFII)...

MATCHED ION IMPLANTATIONEnergy-Filter For Ion Implantation – EFII ©

© mi2-factory GmbH09.09.2020 2

Typical Wafer Manufacturing Procedure

SiC DeviceThis is our business!

High Energy Ion Implantation withEnergy Filter (EFII)

[Source: UC Berkeley Microlab]


Starting Point Of Concept

Energy Filter

Ion Beam (monoenergetic)

Filtered Beam

(various energies)

Energy Filter Ion Implantation (EFII) Process: modification of ion distribution on the wafer by filter

Wafer

Depth Profile

Example:Nitrogen in SiC EFII Implanted Depth Profile (SIMS Analysis)


Use Cases Of Our Technology

USE CASES of

EFII-TRONin SiC

Power Semiconductors

Silicon Power

IGBTLIFETIME ENG.

Fieldstopp ENG.

SiC Power DevicesSilicon Semiconductors

SiliconCOMMODITY HE-Implant:

Low Voltage PowerSensors

Power ICs / ICsDetector

etc..

Ions:Al, N, He, C, B, P


Implanter Concepts for EFII Integration

Tandetrone.g. up to several 10 MeV available on semiconductor equipment market

LINACe.g. up to several MeV available on semiconductor equipment market

Cyclotronmi2-factory´s uniqueEFIITRON concept

+ proven implanter concept- limited throughput- huge dimensions

+ industry proven implanter concept+ high throughput- limited energy

+ high throughput+ high energy+ compact, low investment- novel concept

EFII tested


Novel Semiconductor Equipment System

SmallCyclotron

Accelerator

Our BusinessDevelopment & Supply

of ConsumableEnergy-Filter Tools

Endstation

Our innovative concept:

© mi2-factory GmbH 7

Potential Setup Of The EFIITRON Consortium

Consortium-Leadmi2-factory

Energy-Filter Factory Technical IntegratorCyclotron

Manufacturer

Provides CyclotronsTechnicallyBuildsMachine

Delivers Energy-Filters

Organizes Machine Production

Partners strongly interestedSeveral companies capable

Options in Europe:- SiC R&D Line, PPP- Implant Foundry

Pilot - FacilityEarly Adopter

Chipmaker

SiC LeadingChipmakersJoint Development?

Sells MachineOrganizes MaintenanceGuarantees Uptime

09.09.2020

Customer

© mi2-factory GmbH 09.09.2020 8

Corporate Development

Energy-filter development + Realizing customer

projects with R&D setup

7 patents granted + 11 patent applications

Quality ISO 9001 certification ✓

✓

✓

2016 -2017 2018 - 2019 2020 - 2022 2022 - 2024…

Start to apply ready-to-use EFIITRON production

machines

Machine innovation with partnersPrototype - Demonstrator

© mi2-factory GmbH 09.09.2020 9

The EFIITRON-Concept

Some Technical Details Following…


The EFIITRON-Concept (1)

The EFIITRON concept features a novel approach to industrial high energy ion implantation for semiconductors

mi2-factory´s EFIITRON concept

combines in a unique way two technologies:

- Cyclotron ion accelerators- mi2-factory´s Energy-Filter For Ion Implantation (EFII)

High throughput, small ion implanters, with low cost of ownership –equipped with

high flexibility due to EFII technology

Bringing the cyclotrons and EFII together really means to create something fundamentally new:




A brief view on Cyclotrons…

So called cyclotrons are well known for medical applicationsin hospitals for radiopharmaceutical production or cancer treatment.

It has been demonstrated that particularly small (footprint 2x2m) cyclotron systems can be built,which are highly accepted in the market due to their proven reliability and low cost of ownership.The number of installed machines of market leaders exceeds several hundred systems worldwide.

Why do Chipmakers not use Cyclotrons?Cyclotrons are not available for ion implantation of semiconductor wafers, because cyclotrons as such do not offer the required flexibility interms of implantation depth adjustment. For medical applications just one setting is enough.


The EFIITRON-Concept (3)The EFIITRON concept features a novel approach to industrial high energy ion implantation for semiconductors.

The key to flexibility:Energy-Filter For Ion Implantation (EFII)mi2-factory adresses ion implantation applications in the power semiconductor field,with a strong focus on SiC (high voltage diodes, MOSFETs, Superjunction MOSFETs)but also on Si- power devices (IGBTs).Our customers would like to improve their processing results by using high-energy ion implantation.However to date, high-energy ion implantation equipment (above 10MeV ion energy) is extraordinarilyhuge, expensive and difficult to operate. Additionally the resulting dopant profiles are restricted tosimple Gaussion shape.

The Energy-Filter For Ion Implantation technologyis a passive ion-energy modulating technology which allows

• machine independent implantation depth range adjustment AND• deep custom tailored dopant profiles which are of particular interest in power semiconductor applications

Today cyclotrons are not available for ion implantation of semiconductor wafers, because cyclotrons as such do not offer the required flexibility in terms ofimplantation depth adjustment.

The EFIITRON approach targets at overcoming these restrictions by combining- mi2-factory´s Energy-Filter For Ion Implantation (EFII) technologyAND- cyclotron technology




High throughput, small ion implanters, with low costof ownership –equipped with

high flexibility due to EFII technology

Bringing the cyclotrons and EFII together really meansto create something fundamentally new:




The question is, how to bring this to life?

Foundation of a consortium is the key tocombine technical and market knowledge from various fields

Cyclotron

EFII-TechnologySemiconductor wafer-endstation+ Integration of components

ApplicationRequirementsfromCustomer

Thank You very much forYour attention and interest!

Moritz-von-Rohr-Straße 1a07745 JenaGermany

+49 3641 2719321

+49 3641 2719323

[email protected]

www.mi2-factory.com

MATCHED ION IMPLANTATION - ISPSD 2020 2020. 9. 9. · Energy-Filter For Ion Implantation (EFII)...

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