Market trends for small-signal discrete devices Stefan Schwantes · Market trends for small-signal...
Transcript of Market trends for small-signal discrete devices Stefan Schwantes · Market trends for small-signal...
Market trends for small-signal discrete devicesStefan Schwantes
November 20, 2017
Semicon
Market trends for small-signal discrete devices
Small-signal discretes are driven by miniaturization & efficiency
nexperia.com2
• A short overview about a new company with a long history: NEXPERIA
• What drives the discrete market?
• Key driver: mobile & wearable
• Key driver: automotive
• Key driver: power efficiency
• The role of discrete packages in support of market trends
Agenda
A new force in Discretes, Logic & MOSFETsWith a long history, broad experience and a global customer base.
nexperia.com3
• A dedicated company for Discretes, Logic and MOSFETs with leadership positions in all product areas
• Over 1.1 billion US$ revenues (2016)
• More than 12% market share
• High volume production of 85 billion units annually
• 11,000 Employees supporting customers globally
• 2 own frontend, 3 own backend manufacturing sites
• Over 60 years of expertise in semiconductors, the former Standard Products division of NXP
• Headquarters in Nijmegen, The Netherlands
• CEO: Frans Scheper, heading a successful and established leadership team
• Award winning corporate identity!
Key Facts
Our manufacturing footprintVertically integrated for maximum efficiency
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Manchester
Nijmegen Hamburg
Guangdong
Cabuyao
Serembam
Front End
Hamburg, Germany
Manchester, UK
Headquarters
Nijmegen
The Netherlands
Back End
Guangdong, China
Cabuyao, Philippines
Seremban Malaysia
5 owned front and back end factories
Very high degree of automation in backend factories
Own specialized equipment designer
Highly efficient supply chain and secure capacity
90 billion products every year
1-stop-shop for Discretes, Logic and MOSFETsBroad portfolio for standard functions and state-of-the art applications
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More than 10,000 active types
MOSFETs
• Automotive MOSFETs• Low RDSon Trench
MOSFETs from 12 V to 200 V
• N/P-channel MOSFETs• ESD protected types
ESD Protection
• ESD protection devices with standard and low capacitance for high-speed interfaces
• Surge protection (TVS) devices
• Common Mode & EMI filters
• Application-specific ESD solutions
Logic devices
• Automotive logic• Buffers, drivers,
transceivers• Counters / frequency
dividers• Flip-flops, latches, registers• Gates• Logic voltage translators• Specialty Logic• Switches, (de)multiplexers
Diodes & transistors
• General purpose diodes and transistors
• Resistor-equipped transistors (RETs)
• Low VCEsat, medium & high power transistors
• Zener, Schottky and switching diodes
• Low VF Schottky and PN rectifier
Innovation Strategy for discrete devices
• The main objectives of new discrete processes, packages, and products are:
• Further reduction of power losses in MOSFETs, Bipolar Transistors and Rectifiers
• Better protection of system ICs with minimized impact on the electronic signals
• Size reduction (especially also height reduction) of packages/products
• In addition we have launched a program to expand the Logic portfolio in the areas of switches and translators
• Reduction of overall power consumption
• Reduction of standby power consumption
• Reduced wiring effort
• Protection of multiple bus systems within the car
• Reduction of size of modules
• Mechanical space constraints
• Cost reduction by smaller control units
• Reduction of overall power consumption
• Reduction of module size
• Reduction of power dissipation / cooling requirements
• Reliability ofinterconnections
• Protection againstinduced spikes
• Increased functional density
• Cost reduction by smaller units
• Faster Charging• Longer battery life• Reduced power
dissipation / heat• Smaller charging
units• Wireless charging
• Protection of interconnects and internal modules
• Smaller form factors (especially thinner)
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NFC antenna, Bluetooth, WiFi• ESD protection, 18V,
24V • MOSFET as Load
Switch
MIPI M-PHY Display, camera• ESD protection• ESD protection & CMF• Analog buffers for
control lines• Logic Gates
Mobile & wearable electronics as a strong driver for Discrete, Logic and MOSFET devices
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Charging & Battery• Schottky Rectifiers as
reverse current protection
• TVS or MOSFET for protection of Vbat
• MOSFETs for charging path
• ESD protection for standard and high speed interfaces
• Surge protection• Battery protection• Load switching• PMEG for DCDC
boost conversion• Logic Gates• Voltage translators• I/O expansion
USB3.x / Type C protection & filtering• ESD protection• ESD protection & CMF• TVS protection for
Vbus and Vbat
SIM & SD Card• ESD protection• ESD protection & EMI
Filtering• Voltage Translation• Analog Switches
Audio interfaces• Headset, Speaker,
Microphone • ESD protection• ESD protection &
EMI filtering
Covering all basic functions in portable applications
HDMI, DisplayPort• ESD protection• ESD protection &
Signal conditioning
Keypad• ESD protection• ESD protection &
EMI filtering
Haptic Driver• Logic Gates
LED Backlight• Schottky Rectifiers in
Boost Converter Circuits
• MOSFET as Load Switch
Application Processor• Logic Gates and
Translators• I/O expansion
through logic mulitplexers andshift registers
Strong growth of wearable devices expectedGartner Says Worldwide Wearable Device Sales to Grow 17 Percent in 2017
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Discrete Protection & Filtering devices–historic market development
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Challenges for discrete ESD protectionKey parameters for ESD protection
High robustness against ESD pulses
Low clamping/dynamic resistance – to protect the system chip
Low capacity to maintain signal integrity for high-speedinterfaces
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Evolution of discrete ESD devices
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General purpose ESDprotection devices
Low capacitance ESD protection for high-speed interfaces
Both, package and silicon technologies have to advance to meet increasing applicationdemands
Year 2000s
Year 2010s
2x
Efficiency in sizeNext generation packages for ultimate space saving solutions for portable devices
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World’s smallest logic package
Large pad pitch, >0.4 mm
Easier PCB placement
High performance
Ultimate space saving solution
Highly reliable & robust
High-power capability due to clip-bond technology and heat sink
Broad range of leadless packages 0402 to 2020 form factor
Including options with solderable side pads
CFP3(SOD123W)2.6 x 1.7 x 1.1
LFPAK33(SOT1210)3.3 x 3.3 x 0.85
CFP5(SOD128)3.8 x 2.6 x 1.0
X2SON5(SOT1226)0.8 x 0.8 x 0.35
X2SON6(SOT1255)1.0 x 0.8 x 0.35
X2SON8(SOT1233)1.35 x 0.8 x 0.35
WLCSP40.8 x 0.8 x 0.35
WLCSP61.48 x 0.98 x 0.35
WLCSP51.51 x 1.14 x 0.65
WLCSP101.57 x 1.17 x 0.57
DSN0402-2(SOD992)0.4 x 0.2 x 0.12
DSN0603-2(SOD962)0.6 x 0.3 x 0.3
DSN1006-2(SOD993)1.0 x 0.6 x 0.3
DFN1006D-2(SOD882D)1.0 x 0.6 x 0.37
DFN1608D-2(SOD1608)1.6 x 0.8 x 0.37
DFN1006B-3(SOT883B)1.0 x 0.6 x 0.37
DFN1010D-3(SOT1215)1.1 x 1.0 x 0.37
DFN2020)(SOT1220 /SOT1118)2.0 x 2.0 x 0.62
DFN1412-6(SOT1268)1.4 x 1.2 x 0.47
Miniaturization
Typical devices for mobile applications
Interface conditioning and protection
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PESD3V3Z1BSF
TrEOS ESD protection in a very small and leadless DSN0603 (SOD962) package.Ideal combination of low capacitance(0.28pF), low clamping and high ESD robustness
PCMFxUSB3SCommon mode EMI filters with integrated TrEOS ESD protection.Superior common-mode suppressionFootprint compatible ESD-only version availableIndustry-standard WLCSP5, 10 and 15 packages for smallest footprint
PTVSxZ1USKTransient voltage suppressor in a very small leadless DSN1608-2 (SOD964) package for mobile applications
PBSS2540MB40V, 0.5A NPN Low VCESAT
Transistor in a leadless ultra small DFN1006-3 package
PHPT60603NY60V, 3A NPN high power bipolar transistor in a SOT669 (LFPAK56) SMD power plastic package
PBSS4130PAN30 V, 1 A double NPN Low VCESAT
Transistor leadlessmedium power DFN2020-6 package
PDTB113EQA50 V, 500 mA PNP resistor-equipped transistors in a leadless ultra small DFN1010D-3 package with solderableside pads
PMZ600UNE / PMDXB600UNEin DFN1006 and DFN1010
• Standard high RDSon20V N-ch for Portables
PMXB43UNE in DFN1010
• 3A drain current on 1 mm² foot print
PMPB27EP in DFN2020
• USB type-C power delivery
Transistors for Typical applications as Load switches, Reverse battery protection & Charging path
PMEG4010EPK40 V, 1 A low VF
Schottky barrier rectifier in a leadless ultra small DFN1608D-2 (SOD1608) packageIdeal for LED backlighting of large displays
PMEG2002AESF20 V, 0.2 A low VF
Schottky barrier rectifier in a leadless ultra small DSN0603 (SOD962) packageIdeal for LED backlighting of small displays
Diodes for LED backlighting
IC insights: discrete market driven by power applicationsApart from mobile applications, applications requiring energy efficiency are driving the market
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source IC insights
Industrial growth driversApart from mobile applications, applications requiring energy efficiency are driving the market
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Sub-circuits enabled by Discretes,
MOSFETs and LOGIC
• Logic: Gates, Transceivers,
Schmitt-Trigger• Zener diodes, Switching diodes• BISS and GP
Transistors• MOSFETs
Bright light with low power
consumption
• BISS & GP transistors
• NCR / NPIC LED Drivers•Analog
Multiplexer/Demultiplexer
• Schottky diodes• Switching diodes
Compact designs through Discretes in advanced packages
• Advanced performance in small packages
• Voltage translators• High ESD protection of
data interfaces• TVS protection on VBUS
lines • MOSFETs for motor
control• Logic level translators
5V down to 1.1V
Robotics
LED Lighting
Industry 4.0 -Digitalization &
ConnectivityCameras & Control &
Sensors
Save Energy / gaining convenience
• Low power translators for I/O expansion• Diodes and transistors in small-size packages• MOSFETs in small-size packages e.g. for load switch applications• White goods – motor control, connectivity
More and faster data busses for
optimized production planning
• ESD protection devices to safeguard transceiver interfaces
of communication buses e.g. I2C,
SPI/SSI, Ethernet, LVDS, RS232, RS485,
USB2.0, USB3.x
IoT, Building & Home Control
Product efficiencyPower efficient, robust, fast, integrated, flexible
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MOSFETs with high ruggedness • Low RDSon
• Low Qg • High SOA• High avalance robustness• Copper clip for low package
inductance and resistance
Schottkys with thermal stability athigh ambient temperatures @ 175°C• Low VF
• Ultra-low leakage
Bipolar transistors for 175°C• Low VCEsat
Logic devices• Low Power consumption (AXP/ AXPnT)• Reduce µC pin count through shift
registers and multiplexers• Multiple usabiliity through combinational
and configurable• Buffers with Schmitt Trigger
Superior thermal performance
Highest design flexibility
High ruggedness in small size
ESD and surge protection• Highest protection of data buses (CAN,
LIN, FlexRay, Ethernet)• High-speed USB protection, e.g. Type-C • High surge robustness up to 600 W
Clip-bonded package families (LFPAK & CFP)Thermally enhanced, reliable and rugged packages
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AOI capable and AEC-Q101 qualified
Boost a track record of 15 years
Solid copper clip – wire bond free
LFPAK family
CFP family
Lower resistance, lower inductance
Best thermal and electrical performance,unprecedented power density
Rugged in toughest conditions
Proven and future proof concept
Flexible leads (LFPAK) for improved reliablity175°C operating temperature
Exposed leads and tin-plated lead ends (CFP15)
Compatible with industry-standard footprints
Nexperia developed LFPAK in 2002Largest portfolio in Automotive MOSFETs and CFP3/5 rectifier
Clip-bonded package families (LFPAK and CFP)Save space without compromising performance
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Schottkyrectifiers
PNrectifiers CFP3
(SOD123W)2.6 x 1.7 x 1.1
CFP5(SOD128)3.8 x 2.6 x 1.0
CFP15(SOT1289)5.8 x 4.3 x 0.78
LFPAK33(SOT1210)3.3 x 3.3 x 0.85
LFPAK56(SOT669)5.0 x 6.0 x 1.0
LFPAK56D(SOT1205)5.0 x 6.0 x 1.0
MOSFETs
Bipolar transistors(LFPAK56/56D)
LFPAK56E(SOT1023)4.58 x 5.13 x 1.03
SMA11.4 mm2
footprint area
CFP36 mm2
footprint area
DPAK70 mm2
footprint area
LFPAK5630 mm2
footprint area
53 %spacesaving
47 %spacesaving
High power capabilities
DPAK/D2PAK &SMA/B/C level
Replace larger package
Continuous innovation in silicon & package technology to support Automotive trends
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Efficiency
Miniaturization
Electrification
Third driver for discrete devices: Electrification of the carSupported by product portfolio and roadmap
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Better safety through MOSFETs
• High drain current capability (ID), • Avalanche ruggedness, • Low RDSon
Higher reliabilitythrough MOSFETs
• Power MOSFETs and Bipolar transistors
• Space saving, power efficient, low
noise
Protection for In-Vehicle Networking
ESD protection devices to safeguard interfaces
of communication buses, IVN,
infotainment systems (incl. solutions for Type-C connector)
Compact designs through Discretes in advanced packages
• Medium-power low VCEsat bipolar transistors
in LFPAK (175 °C) to support voltage
regulation / core supply• ESD Protection
Increased electronic functions
(Braking, steering, fuel injection, automatic
transmission)
Replacement of electric/
mechanical relays
Increased information sensing & processing
(Networks, infotainment)
ADAS(Vision & Safety)
Electrification of the powertrain
(e.g. mild hybrid)
48 V for Mild Hybrid
DCDC converter 48V:12VBoost starter-generator
SuperchargerWater pump
• PowerMOSFET40V, 80V and 100V
• Schottky rectifier up to 100 V
• FRD up to 200V
Discrete devices for...
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Safety and control• ADAS• Airbag• TPMS• Collision warning• Parking assistent• Back monitor
• Switching MOSFETs• ESD / surge protection• Battery protection• Free-wheeling diode• Flyback diode• DCDC conversion• Voltage regulation• Shift register• I/O expansion• LED drive
Powertrain48V Mild Hybrid• DCDC converter 48V:12V• Boost starter-generator• Supercharger• Water pump
Powertrain 12V ICE• Engine control• Fuel pump• Transmission• Alternator, battery, and
starter
Lighting• Front LED lighting• LED Daytime running
light• Rear LED lighting• Interior LED lighting
Comfort and control• Power door• Power window• Climate control• Seat control• Mirrow and wiper control
Chassis• Steering / EPS• Braking / ABS• Electronic Parking Brake• Traction control• Suspension• Roll stabiliation
Networking & Diagnostic• CAN• LIN• FlexRay• Ethernet• BroadR-Reach• Bluetooth, WiFi• USB
Infotainment• Dashboard• Car audio• Connectivity audio• Entertainment• GPS• Car navigation display
Covering all basic functions enabling automotive electronic applications
Typical devices for automotive applications
Bipolar transistors Diodes & Rectifiers
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NCR402T20 mA LED driver in a SOT23 plastic package
PHPT60603NYNPN high power bipolar transistor in a SOT669 (LFPAK56) SMD power plastic package
BCP56T80 V, 1 A NPN medium power transistors in SOT223 package
PDTB113EQA50 V, 500 mA PNP resistor-equipped transistors in a leadless ultra small DFN1010D-3 package with solderableside pads
PMEG100V100ELPD100 V, 10 A low leakage current Schottky barrier rectifierencapsulated in a CFP15 (SOT1289) package
PNS40010ER400 V, 1 A high power density, standard switching time PN-rectifierin a small and flat lead CFP3 (SOD123W) package
PMEG4010EPK40 V, 1 A low VF
MEGA Schottky barrier rectifier encapsulated in a leadless ultra small SOD1608 (DFN1608D-2) package
PMEG10030ELP100 V, 3 A low VF
MEGA Schottky barrier rectifierin a small and flat
lead CFP5
(SOD128) package
LFPAK33 Shrinking the power footprint
• LFPAK family extension into medium/low power systems
• Advanced copper clip package technology
• Easy optical inspection
• Enhanced board-level reliability
• Compact footprint 10.9mm2
• Ultra-low package resistance
DFN2020MD-6 Ultra-small single MOSFETs
• N- and P-channel MOSFETs
• 175°C degree
• 13 types with VDS: 20-60 V
• Solderable side-pads for easy optical inspection
• Compact footprint: 2x2 mm, height: 0.65 mm
MOSFETs for EPS, transmission control, HVAC, Chassis & safety
Product / package range
DFN1006-3 DFN1010D-3 SOT666 D2PAK TO-220
1.0 x 0.6 x 0.5 1.1 x 1.0 x 0.37 1.6 x 1.2 x 0.55 11 x 10 x 4.3 15.6 x 10 x 4.4
20V - 60V 12V - 80V 20V - 60V 30V - 100V 30V - 100V
SOT363 SOT323 DFN2020MD-6 SOT457 SOT23
2.0 x 1.25 x 0.95 2.0 x 1.25 x 0.95 2.0 x 2.0 x 0.65 2.9 x 1.5 x 1.0 2.9 x 1.5 x 1.0
20V - 60V 20V - 60V 12V - 80V 20V - 60V 20V - 100V
LFPAK33 LFPAK56 LFPAK56D SOT223
3.3 x 3.3 x 0.85 5.0 x 6.0 x 1.0 5.0 x 6.0 x 1.0 6.5 x 3.5 x 1.65
30V - 100V 30V - 100V 30V - 100V 70V - 100V
Package growth areasContinuously investing in new technologies
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GROWTH STABLE DECLINE
Leadless and
Clip-bond packages
Leaded SMD
packages
Glass /
through-hole
packages
SA
LE
S V
OL
UM
E
Conventional power
packages
SMA (B/C), TO-22
Continuous innovation
Space, power & thermal efficiency
Different applications result in a broad range of packages…
Market trends for small-signal discrete devices
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• Growing market segments for discrete devices are :- Mobile & wearable- Automotive- Energy efficient industrial applications
• High-speed interfaces and increasing ESD sensitivity are a strong growth driver
• Clip-bonded packages are replacing wire-bonded for power efficient applications
• Different applications result in a broad range of packages
• The main objectives of new processes, packages, and products are
• Further reduction of power losses in MOSFETs, Bipolar Transistors and Rectifiers
• Better protection of system ICs with minimized impact on the electronic signals
• Size reduction (especially also height reduction) of packages/products
Summary