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ELECTROSTA TICDISCHARGESUSCEPTIBILITYDATA

7 ELrCTEN V 06 1989MVolume II O 1

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Diz.r.t...., . Jtd

The information and data contained herein have been compiled from

government and nong'-'vernment technical reports and from materialsupplied by various manufacturers and are intended to be used forreference purposes. Neither the United States Government nor lIT

Research Institute warrant the accuracy of this information and data. Theuser is further cautioned that the data contained herein may not be used inlieu of other contractually cited references and specifications.

Publication of this information is not an expression of the opinion of TheUnited States Government or of lIT Research Institute as to the quality ordurability of any product mentioned herein and any use for advertising orpromotional purposes of this information in conjunction with the name ofThe United States Government or lIT Research Institute without written

permission is expressly prohibited.

Ordering No. VZAP-2

ELECTROSTA TICDISCHARGE

SUSCEPTIBILITY DATAOF

DISCRETE/PA SSIVEDEVICES

Volume II1989 A c cesio- ° F__

NTIS C -A&-

Prepared by: Ut,,,.,-., " ,. [

William H. Crowell Bye.C, /2, t 7'TReliability Analysis Center

011F al 'y (Codes

Avai andlor

Under contract to: Dist bpcial

-1 ., 1Rome Air Development Center

Griffis AFB, NY 13441-5700

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Data is collected on a continuous basis from a broad range of sources, including testing laboratories,device and equipment manufacturers, government laboratories and equipment users (government and non-government). Automatic distribution lists, voluntary data submittals and field failure reporting systemssupplement an intensive data solicitation program.

Reliability data and analysis documents covering most of the device types mentioned above areavailable from the RAC. Also, RAC provides reliability consulting, training, technical and bibliographicinquiry services which are discussed at the end of this document.

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Alexandria, VA 22314-6145 65802S 1.0" 11. TITLE (Include Security Classfication)

Electrostatic Discharge Susceptibility Datai12. PERSONAL AUTHOR(S)

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FROM TO_ 1989, March 13 I16. SUPPLEMENTARY NOTATION Hard copies available from Reliability Analysis Lenter, FU BOX 4/UU,

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FIELD GROUP SUB-GROUP "Electrostatic Discharge, (E&DUYElectrostatic Discharge Sensitive (ESDs.Y

" Integrated Circuits., Discrete Semiconductor,19. ABSTRACT (Continue on reverse if necesfsay and identify by block number)

This publictaion contains Electrostatic Discharge (ESD) susceptibility data of

electronic devices and is an update to the VZAP-1, the 1983 RAC ESD data compendium.Detailed susceptibility data is presented along with the ESD classification inaccordance with MIL-HDBK-263 and MIL-STD-1686A for approximately 4,300 devices.This data is useful in the establishment of an ESD control program. The datacontained in this publication is a product of the Reliability Analysis Center'sVZAP data base, which is intended to be a central repository of ESD SusceptibilityData. 0

20. DISTRIBUTION IAVAILABILITY OF ABSTRACT 21 ABSTRACT SECURITY CLASSIFICATION

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Steven J. Flint, RAC Technical Director (315) 337-0900DO Form 1473, JUN 56 Previous editions are obsolete. SECURITY CLASSIFICATION OF THIS PAGE

TABLE OF CONTENTS

Volume II

SECTION 3.0 DETAILED DEVICE SUSCEPTIBILITY TEST DATA3.2 DISCRETE SEMICONDUCTOR SUSCEPTIBILITY 373

TEST DATA

3.3 PASSIVE COMPONENT SUSCEPTIBILITY TEST DATA 519

SECTION 4.0 PART NUMBER INDEX 533

SECTION 5.0 DATA SOURCES 559

SECTION 6.0 REFERENCES 581

APPENDICES

APPENDIX A DERIVATION OF DATA CONVERSION FORMULA 589

APPENDIX B REPORTING SENSITIVITY DATA 595- DEF.NITION OF VZAP TEST PARAMETERS 599

APPENDIX C ADDITIONAL RAC SERVICES 603

LIST OF TABLES

TABLE 3 MANUFACTURER LISTING vii

TABLE 4 FAILURE CRITERIA LISTING viii

TABLE 5 TEST REMARKS LISTING xi

TABLE 6 GENERAL REMARKS LISTING xvii

TABLE 7 DATA ITEM DESCRIPTION DI-RELI-80670 597

TABLE 8 VZAP TEST PARAMETERS 601

v

RAC ESD DATABASE

Table 3 - MANUFACTURER LISTING

CODE MANUFACTURER NAME CODE MANUFACTURER NAME

ALP Alpha Industries MOT Motorola Semi

AM American Microcircuits MPI Micropac Industries

AMD Advanced Micro Devices MSC Microwave Semi Corp

AMP Amperex Electronics MSI Microsystems International

ANA Analog Devices N/R Not Reported

ANZ Anzac Electronics NCR National Cash Register

ATM ATMEL NEC Nippon Electric Company (NEC)

BEC Beckman Instruments NIT Nitron

BEN Bendix NSC National Semi

CCL Croven Crystal Ltd. NUC Nucleonic ProdCEN Centralab PLE Plessey

CMP Component Device Inc. PPC PPC Products

COD Codi Semiconductor PPI Precision Products Inc.

CS! Continental Semi. Inc. PRE Precision Monolithics

CYP Cypress Semiconductor RAY Raytheon

DAL Date Electronics RCA RCA

DCC Dynamic Control Corp RI Rockwell Intl (Includes Collins)DEL Delco Electronics SCN Semicon

DIC Dickson Elec. Corp. SEM Semtech Corp.

ETC Elec. Transistor Corp. SEN Sensitron Semi.

FSC Fairchild SEQ SEED

GE General Electric SGS SGS ATES

GEN General Semiconductor SIE Siemans

GI General Instruments SIG Signetics

GTL Gilway Technical Lamp SIL Silicon General

HAR Harris SIX Siticonix

HAU Haufman SOL Solitron Devices

HEW Hewlett Packard SPR Sprague Electric

HIT Hitachi SSD Solid State Devices

HON Honeywell SSS Solid State Scientific

HYB Hybrid Systems SUP Supertex

HYC Hycomp Inc. SYN Syntron

IDT International Device Technologies TEC Teledyne Crystatonics

lIT ITT Semiconductor TEK Tektronix

INM INMOS TEL Teledyne

INS Inselek TEX Texas InstrumentsINT Intel THC Thermometrics

IRC IntL. Rectifier Corp. TRC Transition Elec. Corp.

ISL Intersil TRW TRWITE Intech UDT United Detector Technology

KSC KSC Semiconductor Corp. ULT Ultronix Inc.

LEA Lear Siegler UNI Unitrode

LTC Linear Technology Corp. VAR Various

MAC MACOM VIS Vishay

MAS Microwave Associates WES Westinghouse

MCC McCoy Electronics XIC Xicor

MIT Micro Power Systems ZIL ZiLog

MON Monolithic Memories

MOS Mostek

vii

RAC ESD DATABASE

Table 4 - FAILURE CRITERIA LISTING

CODE FAILURE CRITERIA

1 I UA LEAKAGE AT 1OV.

2 1 UA LEAKAGE AT 20V.

3 10 UA INPUT LEAKAGE PREVIOUSLY MEASURED TO BE 1 UA.

4 10% CHANGE IN ELECTRICAL PARAMETERS.

5 10% CHANGE IN LEAKAGE CURRENT.

6 10% PARAMETER CHANGE.

7 110= 4 UA.

8 2 MA LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

9 2 UA LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

10 2% CHANGE OF VOUT AT IL= 50UA.

11 20 UA LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

12 200 NA LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

13 25% LEAKAGE, luA LEAKAGE, FUNCTION FAILS.

14 50% DROP IN REVERSE VOLTAGE AT IR= 5UA.

15 50% DROP IN V(BR) CBO AT IB= 5UA.

16 50% DROP IN V(BR) GSS AT IG= 5UA.

17 50% INCREASE IN GATE LEAKAGE CURRENT.

18 A 10% CHANGE IN INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT.

19 A 10% OR > CHANGE IN ANY MEASURED ELECTRICAL PARAMETER WAS CONSIDERED A FAILURE.

20 A 10% OR > INC. IN MEAS. LEAKAGE CURRENT @OR < A VOLT 10% < THE INITIAL BRKDWN VOLT.

21 A CHANGE OF 0.5% OR GREATER TOLERANCE.

22 A SHIFT OF 10% OF INPUT OFFSET VOLTAGE AND INPUT BIAS CURRENT.

23 ANY MEASURABLE CHANGE IN AN ELECTRICAL PARAMETER.

24 BVBE AT IR= lOONA.

25 CATASTROPHIC FAILURE 'INPUT CURRENT).

26 CATASTROPHIC.

27 CHANGE IN IGSS.

28 CHANGE IN IIH OF 10%.

29 CHANGE IN IIH OF 20NA AT VCC= 5.5V AND VIN= 2.4V.

30 CHANGE IN IIH OF 500% AT VIN= 2.7V.

31 CHANGE IN IlL OF +500% AT VIN= .45V.

32 CHANGE IN IlL OF 500% AT VIN= 5V.

33 CHANGE IN 110 OF 500%.

34 CHANGE IN IL OF +500% AT VIN= 1V.

35 CHANGE IN IR OF +500% AT VBR= 30V.

36 CHANGE IN IR OF +500% AT VR= 50V.

37 CHANGE IN IR OF 500% AT VBR= OV.

38 CHANGE IN IR OF 500% AT VR= 35V.

39 CHANGE IN IS OF 500% AT VS= -IOv.

40 CHANGE IN RESISTANCF OF .1%.

41 CHANGE IN RESISTANCE OF 2%.

42 CHANGE IN VOL OF .050V AT VCC= 4.5V,IOL= 2MA AND VIN= 2.OV.

43 CHANGE OF 0.5% OR GREATER TOLERANCE.

44 CHANGED IN IV CHARACTERISTICS WITH INPUTS HIGH.

45 CHECK FOR ANY CHANGE IN FORWARD VOLTAGE AND REVERSE LEAKAGE CURRENT.

46 CUMULATIVE LEAKAGE CURRENT.

47 D.C. PARAMETER OUT OF SPEC.

48 DAMAGE TO INPUT DIODE.

49 DEGRADATION OF V-I CURVE OR FUNCTIONAL FAILURE.

50 DEVICE CONSIDERED ESD SENSITIVE WHEN A 10%CHANGE IN ELECT. CHAR. WAS OBSERVED.

51 ELECTRICAL PARAMETERS OUT OF SPEC.

52 EXCESSIVE LEAKAGE CURRENT OR OPEN CONDUCTOR LINES.

53 FAILED THE DC ELECTRICAL PARAMETERS TEST LIMITS.

viii

RAC ESD DATABASE

Table 4 - FAILURE CRITERIA LISTING (Cont'd)

COOE FAILURE CRITERIA

54 FAILED VOLTAGE IS THE AVERAGE OF PARTS SAMPLED.55 FAILS TO MEET ELECTRICAL SPECIFICATION.

56 FUNCTION FAILURE OR D.C. PARAMETER OUT OF SPEC.

57 FUNCTIONAL FAILURE.

58 GATE CURRENT GREATER THAN 5UA AT A GATE/SOURCE VOLTAGE OF 22 VOLTS.

59 GREATER THAN .5UA INPUT AT 1OV.

60 GREATER THAN 1uA LEAKAGE CURRENT AT 1.5 VOLTS.61 GREATER THAN 5uA LEAKAGE CURRENT AT 0.5 VOLTS.

62 ID= SHORT.

63 IDSS OUT OF SPEC.

64 IEB AT VEB= +6V +1000% CHANGE.

65 IEBO AT VEB= -6V +1000% CHANGE.

66 IEBO AT VEB= 2.5V +1000% CHANGE.

67 IEBO AT VEB= 3.5V 1000% CHANGE.

68 IF AC,DC,OR FUNCTIONAL PARAMETERS FAILS THE MIN. OR MAX. LIMITS.

69 IGSS AND V(BR)GSS OUT OF SPEC.

70 IGSS AT VGS= -20V +1000% CHANGE.

71 IGSS OUT OF SPEC.

72 IGSSR >25PA AT VGS= 8V AND VDS= OV.

73 IGSSR AND IDSS OUT OF SPEC.

74 IGSSR AND VGS(TH) OUT OF SPEC.

75 IGSSR OUT OF SPEC.

76 IGSSR,VGS(TH) OR IDSS OUT OF SPEC.

77 IIH AND VR OUT OF SPEC.

78 IIH AND/OR VOL OUT OF SPEC.

79 IIH AND/OR VR OUT OF SPEC.

80 IIH OUT OF SPEC.

81 IIH, IlL, OR ISS OUT OF SPEC AT VDD=15V.

82 IIH,IIL,ISS OUT OF SPEC.

83 IIH,IIL,OR ISS OUT OF SPEC.

84 IIH,VF,OR VR OUT OF SPEC.

85 IIH= lOMA.

86 IIH= 16MA.

87 IIH= 97UA.

88 IIL OUT OF SPEC.

89 IL AT VR= .5V +300%.

90 IL AT VR= 50V -1000% CHANGE.91 INPUT BREAKDOWN OF 5MV.

92 INPUT QHORTED TO VCC.

93 INPUTS SHORTED TO GROUND.

94 IR AND VB OUT OF SPEC.

95 IR GREATER THAN 100% CHANGE.

96 IR OUT OF SPEC.

97 IR= 300UA AT 50 VOLTS.

98 IZ AT VR= 5V +1000% CHANGE.

99 IZ AT VR= 6.5V +1000% CHANGE.

100 LEAKAGE CURRENT.

101 LIGHT OUTPUT DEGRADATION AT CONSTANT CURRENT.

102 N/R.

103 PARAMETER CHANGE OF GREATER THAN 10%.

104 PARAMETER SHIFT OF GREATER THAN 10%.

105 PASSED FUNCTIONALLY OR DC ELECTRICAL PARAMETERS.

106 RESISTANCE CHANGE OF 1%.

ix

RAC ESD DATABASE

Table 4 - FAILURE CRITERIA LISTING (Cont'd)

CODE FAILURE CRITERIA

107 RESISTANCE OUT OF SPEC.

108 SIGNIFICANT AMOUNT OF DEGRADATION TO V-I CURVE.

109 SIGNIFICANT CHANGE IN THE +INPUT -GROUND V-I CURVE.

110 STUDY OF BREAKDOWN CHARACTERISTIC OF INPUT AND OUTPUT PINS.

111 TEST LEAKAGE CURRENT.

112 TESTED TO 2000 VOLTS PER METHOD 3015.2 OF MIL-STD-883.

113 V(BR)GSS OUT OF SPEC.

114 VB OUT OF SPEC.

115 VEBO= IV. TYPICALLY 5 VOLTS.

116 VGS(OFF) OUT OF SPEC AND IGSSR >25PA AT VGS= 8V AND VDS= OV.

117 VGS(OFF) OUT OF SPEC AND/OR IGSSR >25PA AT VGS= 8V AND VDS= OV.

118 VGS(OFF) OUT OF SPEC AT VDS= 15V AND ID= 50UA.

119 VGS(TH) AND IDSS OUT OF SPEC.

120 VGS(TH) OUT OF SPEC.

121 VR OUT OF SPEC.

122 WHEN ONE PULSE RESULTED IN DECREASE REV. LFAKAGE OR DECREASE IN JUNC. BRKDWN. VOLT.

123 WHEN ONE PULSE RESULTED IN INCREASE REV. LEAKAGE OR DECREASE IN JUNC. BRKDWN. VOLT.

x

RAC ESD DATABASE

Table 5 - TEST REMARKS LISTING

CODE TEST REMARKS

1 1-DEV. IR SHORT, -100% CHANGE, 1-25% CHANGE, 5- NO CHANGE. 5 PULSES FWD & REV.

2 1.13M OHM MODEL.

3 1.1M OHM MODEL.

4 1.21M OHM MODEL.

5 1.58M OHM MODEL.

6 1.69M OHM MODEL.

7 1.78M OHM MODEL.

8 10 MHZ CRYSTAL OSCILLATOR.

9 10 OHM MODEL.

10 10000 VOLTS IS AN AVERAGE OF AN UNKNOWN NUMBER OF DEVICES.

11 107 OHM MODEL.

12 11.8 OHM MODEL.


14 133K OHM MODEL.

15 1400 VOLTS IS AN AVERAGE OF 3 DEVICES.

16 140K OHM MODEL.

17 IS MHZ CRYSTAL OSCILLATOR.

18 150K OHM MODEL.





23 IM OHM MODEL.

24 2 DEVICES INCREASED IR FROM .09, .095 TO .85, .65uA. 5 PULSES FWD & kEVERSE.

25 2 OUT OF 9 DEVICES TESTED FAILED.

26 2.1M OHM MODEL.

27 2.49M OHM MODEL.

28 2.6% OF TOTAL NUMBER OF PINS FAILED.

29 2.94M OHM MODEL.

30 20.5 OHM MODEL.

31 220 OHM MODEL.

32 232K OHM MODEL.

33 24.9 OHM MODEL.

34 240K OHM MODEL.

35 250 OHM MODEL.

36 250K OHM MODEL.

37 27.2% OF TOTAL NUMBER OF PiNS FAILED.

38 270K OHM MODEL.

39 294K OHM MODEL.

40 297K OHM MODEL.

41 3.01M OHM MODEL.

42 301 OHM MODEL.


44 330 OHM MODEL.

45 360.1K OHM MODEL.

46 38/PIN DEVICE CMOS, GATE ARRAY, SEMICUSTOM, MONOLITHIC.

47 383 OHM MODEL.

45 392K OHM MODEL.

49 4.37 OHM MODEL.

50 4.7/ OF TOTAL NUMBER OF PINS FAILED.

51 400K OHM MODEL.


53 47.5 OHM MODEL.

xi

RAC ESD DATABASE

Table 5 - TEST REMARKS LISTING (Cont'4)

CODE TEST REMARKS


55 475K OHM MODEL.

56 49.9 OHM MODEL.

57 499 OHM MODEL.

58 5 PULSES APPLIED AT BOTH FORWARD AND REVERSE POLARITIES.

59 5 PULSES FORWARD, 5 PULSES REVERSE.

60 5 PULSES PER POLARITY. DEVICES HAD METAL LID.

61 50 OHM MODEL.

62 50% FAILURE RATE WITH ARCING BETWEEN LEADS.


64 511K OHM RESISTOR.


66 57.6 OHM MODEL.

67 590 OHM MODEL.


69 604K OHM MODEL.

70 665K OHM MODEL.

71 7 OUT OF 10 DEVICES FAILED COLLECTOR TO BASE.

72 768K OHM MODEL.



75 ALL 10 INPUTS FAILED TO VSS AT 800 VOLTS.

76 ALL UNUSED INPUTS AT 5.5 VOLTS.

77 ALL UNUSED INPUTS AT GROUND.

78 ALSO DEGRADATION FROM COMMON TO OUTPUT OF 4000 VOLTS.

79 ALSO FAILED 4,5,7-13 TO VDD AT 500 VOLTS.

80 ALSO FAILED FROM 5,6 & 7 TO VSS AT 800 VOLTS.

81 ALSO FAILED FROM ALL OTHER INPUTS TO VSS AT 800 VOLTS.

82 ALSO FAILED FROM INPUT PINS 5,6,8-13 TO VSS AT 800 VOLTS.

83 ALSO FAILED FROM PIN 7 TO OUTPUT AT 1000 VOLTS.

84 ALSO FAILED FROM PINS 4-8 AND 11-13 TO VSS AT 800 VOLTS.

85 ALSO FAILED FROM PINS 5,6,7,11 TO VDD AT 1000 VOLTS.

86 ALSO FAILED FROM PINS 5-13 TO VSS AT 800 VOLTS.

87 ALSO FAILED FROM PINS 8-13 TO VSS AT 800 VOLTS.

88 ALSO FAILED PIN 12 TO VDD AT 500 VOLTS.

89 ALSO FAILED PIN 4 TO VDD, 5-7,9-13 TO OUTPUT AT 500 VOLTS

90 ALSO FAILED PIN 9 TO OUTPUT AT 800 VOLTS.

91 ALSO FAILED PIN 9 TO VDD AND 8 TO OUTPUT AT 1000 VOLTS.

92 ALSO FAILED PIN 9 TO VSS AT 800 VOLTS.

93 ALSO FAILED PINS 4,5 & 9 TO VSS AT 800 VOLTS.

94 ALSO FAILED PINS 5 AND 10 TO VDD AT 800 VOLTS.

95 ALSO FAILED PINS 5-13 TO OUTPUT AT 500 VOLTS

96 ALSO FAILED PINS 5-13 TO VSS AT 800 VOLTS

97 ALSO INPUT TO GND DEGRADED AT 1800 VOLTS.

98 ALSO SHOWED DEGRADATION ON INPUT TO INPUT AT 2000 VOLTS.

99 AVERAGE FAILURE VOLTAGE FOR ALL PINS IS 1000V.



102 AVERAGE FAILURE VOLTAGE FOR ALL PINS IS 1C0V.

103 AVERAGE FAILURE VOLTAGE FOR ALL PINS IS 107UV.




xii

RAC ESD DATABASE

Table 5 - TEST REMARKS LISTING (Cont'd)

CODE TEST REMARKS




































142 AVG OF ALL INPUTS 940V, PINS 1,2,15 MOST SUSCEPTIBLE.

143 AVG OF ALL INPUTS 960V, PIN 15 MOST SUSCEPTIBLE.

144 AVG OF ALL INPUTS 960V, PINS 11,14 MOST SUSCEPTIBLE.

145 BOTH POLARITIES WERE TESTED.

146 BREAKDOWN VOLTAGE CHARACTERISTICS WERE DEGRADED.

147 CARRY LOOK AHEAD GENERATOR.

148 CATASTROPHIC FAILURES OBSERVED ARE DUE TO EMIT. CONTACT PENETRATING THE SILICON.

149 CHARGED DEVICE MOOEL.

150 COLLECTOR TO BASE FOUND TO BE MOST SENSITIVE (BOTH POLARITIES).

151 COMMON TO OUTPUT SHOWED DEGRADATION AT 4000 VOLTS.

152 CRYSTAL (4 Mhz).

153 DAMAGE OBSERVED AT -700 VOLTS, FAILED AT 1100 VOLTS.

154 DAMAGE OBSERVED AT 1000 VOLTS, ALL PINS FAILED AT OR BEFORE 3500 VOLTS.

155 DAMAGE OBSERVED AT 1050 VOLTS, ALL INPUT PINS FAILED AT OR BEFORE 2000 VOLTS.

156 DAMAGE OBSERVED AT 150 VOLTS, ALL DEVICES FAILED AT OR BEFORE 400 VOLTS.

157 DATE CODE TESTED WERE BETWEEN 8134 TO 8715.

158 DEGRADATION OCCURRED AT 1000V.


xiii

RAC ESD DATABASE


COOE TEST REMARKS

160 DEGRADATION OCCURRED AT 200OV.




164 DEGRADATION OCCURRED AT THE APPLIED VOLTAGE.

165 DELAY LINE, PULSE, ELECTROMAGNETIC, LUMPED CONSTANT, 16 PIN DIP.

166 DEVICE PASSED THE REVERSE V-I CURVE AFTER TESTING.

167 DIFFERENT PIN COMB. TESTED AT EACH VOLTAGE STEP.

168 DRIVER / RECEIVER.

169 DUAL PNP TRANSISTOR.

170 EACH PIN STRESSED WITH ALL OTHER PINS CONNECTED TO GROUND.

171 EACH PIN TESTED TO ALL OTHERS TIED TOGETHER.

172 EMITTER TO BASE FAILED AT 3500 VOLTS.

173 FAILED FROM PINS 4,8,13 TO VDD AND 10 TO OUTPUT AT 500 V.

174 FAILED INPUTS TO GND. VOLT IS AVG. OF 4 DEV. MEAN ENGY=16UJ.

175 FAILED PIN 13 TO VDD AT 500 V, 8 TO VSS, 6 TO VDD AT 800 V.

176 FAILED PIN 16 TO VDD AT 500 V & PIN 5 TO VSS AT 800 V.

177 FAILED PINS 13 TO VDD AND PIN 4 TO OUTPUT AT 800 VOLTS.

178 FAILED PINS 5-6,11-13 TO VSS 7 TO VDD & 8-10 TO OUTPUT 500V.

179 FAILED PINS 5-7,9,11 TO VSS 8,10,12 TO VDD AT 500 VOLTS.

180 FAILED PINS 5-8 & 10-13 TO VSS & PIN 9 TO VDD AT 500 VOLTS.

181 FAILED PINS 5-8 & 10-13 TO VSS AT 500V & 9 TO VSS AT 800 V.

182 FAILED PINS 8,13 TO VSS, 15 TO VSS AND 6 TO VDD, ALL AT 800V.

183 FAILED PINS 8-13 TO .SS AT 300V & PINS 4,6 TO OUTPUT AT 500V

184 FAILURE VOLTAGE FROM EMP DATA & WUNSCH MODEL. (SUPERSAP 2).

185 FAILURE VOLTAGE GIVEN IS APPROXIMATE VALUE ONLY.

186 FAILURE VOLTAGE IS AN AVERAGE OF 15 DEVICES.

187 FAILURE VOLTAGE IS AN AVERAGE.

188 FAILURE VOLTAGE OBTAINED FROM EMP DATA AND EXPONENTIAL MODEL.189 FAILURE VOLTAGE OBTAINED FROM EMP DATA AND WUNSCH MODEL.

190 FAILURL VOLTAGE OBTAINED FROM EMP DATA.

191 FAILURES WERE DUE TO INCREASED CONTACT RESISTANCE.

192 FIVE PULSES BOTH POLARITY ACROSS EACH PIN COMBINATION.

193 FREQUENCY SYNTHESIZER.

194 HEX SCHMIDTT TRIGGER.

195 HYBRID, OSCILLATOR.

196 IMCS TO >17.5KV, PAL TESTER TO >43KV. PAL IS A MOTOROLA IN HOUSE BUILT TESTER.

197 IN MOST FAILURES, Vos STARTS FAILING FIRST. THEN, los,IB,AND Icc.

198 INITIAL IGSS IS 0.1uA AND FINAL IGSS IS lOuA.

199 INITIAL IGSS IS 3.8uA AND FINAL IGSS IS lOuA.

200 INITIAL 1OSS WAS O.1uA AND FINAL IGSS WAS 1.0uA.

201 INITIAL lOSS WAS O.luA AND THE FINAL IGSS WAS 0.7uA.

202 INITIAL 1OSS WAS 1.OuA AND FINAL IGSS WAS 3.4uA.

203 INITIAL lOSS WAS luA AND FINAL IGSS WAS lOuA.

204 INPUT AND CLAMPING DIODES WERE TYPICAL FAILURES.

205 INPUT FAILED AT 2500 AND 3000 VOLTS, OUTPUT DID NOT FAIL.

206 INPUT PIN 1 FAILED AT 200V AND INPUT PIN 8 FAILED AT 300V.


208 INPUT PIN 1 FAILED AT 20OV.

209 INPUT PIN 1 FAILED AT 300V.


211 INPUT PIN 1 FAILED AT 50OV.


xiv

RAC ESD DATABASE


CODE TEST REMARKS








220 INPUT PINS 1 AND 8 FAILED AT 300V.





225 INPUT PINS 2 AND 10 FAILED AT 20OV.




229 INPUT TO COM. 3000 V, OUTPUT TO COMMON FAIL AT 1600 VOLTS.

230 INPUT TO OUTPUT DEGRADATED AT 600 VOLTS.

231 INPUTS STRESSED NO PINS GND CAP. OF PACKAGE TO GND IS 290PF.

232 INPUTS STRESSED NO PINS GND CAP. OF PACKAGE TO GND IS 3.5PF.



235 INPUTS STRESSED NO PINS GND CAP. OF PACKAGE TO GND IS 6.5PF.

236 INTEL METHOD.

237 INTEL MODEL.

238 IR CHANGED FROM .045uA TO 22.JuA ON ONE DEVICE. 5 PULSES FORWARD AND REVERSE.

239 IR CHANGED FROM .l03uA, 200V TO .4uA, 80 VOLTS. 5 PULSES FORWARD & REVERSE.

240 IR DOUBLED AFTER 400 VOLTS, SHORTED AFTER 500 VOLTS.

241 IR INCREASED FROM .05uA TO 148uA. 5 PULSES FORWARD, 5 PULSES REVERSE.

242 IR INCREASED FROM .19MA TO .23MA. 5 PULSES FORWARD, 5 PULSES REVERSE.

243 IR INCREASED ON 3 DEVICES; 5.4 TO 6.2uA, 3.7 TO 4.1uA, AND 4.6 TO 5.6uA.

244 JUNCTION IS DAMAGED BEFORE DEVICE FAILS ELECTRICALLY.

245 LED DEVICES WHICH HAVE REV BRKDWN DAMAGE CAUSED BY ESD MAY FUNC NORM IN FWD DIR.

246 MICROCONTROLLER.

247 MIL-STD-883B METHOD 3015 (CAT B), DEVICE PASSED 2000V TEST.

248 MIMIMUM OBSERVED DAMAGE WAS 200 VOLTS ALL DEVICES FAILED AT OR BELOW 300 VOLTS.

249 MIMIMUM OBSERVED DAMAGE WAS 500 VOLTS ALL INPUT PINS FAILED AT OR BEFORE 700 V.

250 MINIMUM OBSERVED WAS 2600 VOLTS, ALL DEVICES FAILED AT OR BEFORE 3000 VOLTS.

251 MODULATOR.

252 N/R.

253 NO DEGRADATION TO OUTPUT AT 4000 VOLTS.

254 NO DEGRADATION TO OUTPUT PINS.

255 NO FAILURES OBSERVED GATE TO CATHODE.

256 OF 4 DEVICES FAILURE VOLTAGE WAS FROM 1400V TO 6000 VOLTS.

257 OF THE FOUR DEVICES TESTED TWO DEVICE DATE CODES WERE GIVEN AS 8615 AND 8501.

258 ONE DEVICE IR SHORTED. 5 PULSES FORWARD, 5 PULSES REVERSE.

259 OTHER PINS OPEN.

260 OTHER PINS TIED TO GND.

261 PAL TESTER IS A MOTOROLA IN HOUSE BUILT IMCS TO >17.5KV, PAL TO >43KV.

262 PIN UNDER TEST STRESSED WITH ALL OTHERS TIED TOGETHER FLOATING.

263 PINS 1 AND 2 FAILED AT 1100 VOLTS.

264 PINS 11-14 TO VSS,15 TO VDD AT 800V,8,13 TO OUTPUT AT 1000V.

265 PINS 13 TO VSS, 9 TO VSS AT 1000V, 8 TO VDD AT 1000 VOLTS.

xv

RAC ESD DATABASE


CODE TEST REMARKS

266 PINS 3,4,5, AND 22 FAILED AT 1200 VOLTS.

267 PINS 8-15 TO VSS AT 500V, 11 TO OUTPUT AT 500 VOLTS.

268 PINS THAT FAILED 3,6-8,11,14,15,17-21, AND 23.

269 PRECISION MOTION CONTROLLER.

270 PROGRAMMABLE BAND PASS FILTER.

271 PROGRAMMABLE INTERVAL TIMER.

272 QUAD DEVICE, ONE DIODE PER DEVICE TESTED.

273 SEMI-CUSTOM GATE ARRAY.

274 SERIAL INPUT PLL FREQUENCY SYNTHESIZER.

275 TEST PREPARED AT 25 DEGREES C.

276 THE MOST SENSITIVE PIN TESTED IS B.

277 THE MOST SENSITIVE PIN TESTED IS G.

278 THE MOST SENSITIVE PINS TESTED ARE C TO B.

279 THE MOST SENSITIVE PINS TESTED ARE C TO E.

280 THE MOST SENSITIVE PINS TESTED ARE E TO B.

281 THE MOST SENSITIVE PINS TESTED ARE G AND D TO S.

282 THE MOST SENSITIVE PINS TESTED ARE S AND D TO G.

283 THE MOST SENSITIVE PINS TESTED ARE S AND G TO D.

284 VOLTAGE IS AN AVERAGE OF 12 RESISTORS. MEAN ENERGY OF 48UJ.

285 VOLTAGE IS AN AVERAGE OF 4 DEVICES.

286 VOLTAGE IS AN AVERAGE OF ALL INPUTS.

287 WORST CASE PINS (+) 1-4,9,10,20,23-27(-)1,10.LOT # (413,410-1).

288 WORST CASE PINS (+) 4-6,22.23,25-27 (-) 20,21. LOT # (284/006,285/008,416-3).

289 ZERO OHMS MODEL.

xvi

RAC ESD DATABASE

Table 6 - GENERAL REMARKS LISTING

CODE GENERAL REMARKS

1 5 PULSES +/-.2 ALL PINS BUT PIN UNDER TEST CONNECTED TO GND VIA RESISTOR. VDD AND VSS GROUNDED.

3 BEGIN WITH 200V, INCR. 100V TO 1000V, INCR. 200V TO 2000V, INCR 500V TO 4000V.

4 CHARGED DEVICE MODEL.

5 DATA OBTAINED FROM WEIBULL PLOTS. STEPS WERE 20% OF AN UNKNOWN STARTING VOLTAGE.

6 DEVICE PASSED REVERSE V-I CURVE. FORWARD AND REVERSE POLARITY TESTED.

7 FAILED VOLTAGE IS THE AVERAGE OF PARTS SAMPLED.

8 FAILURE VOLTAGE OBTAINED FROM EMP DATA AND EXPONENTIAL MODEL.

9 FAILURE VOLTAGES GIVEN ARE VOLTAGE TO CAUSE 30% FAILURE. DETAILS UNKNOWN.

10 IMCS TESTER TO >17.5KV, PAL TESTER TO >43KV. ONE PULSE PER VOLTAGE INCREMENT.

11 IN ACCORDANCE WITH MIL-STD-883B METHOD 3015 (CAT B), DEVICE PASSED 2000V TESTING.

12 MODEL 900.

13 N/R.

14 PIN COMBINATIONS AND POLARITY DIFFER FOR EACH OF THE FOUR PULSES.

15 PIN UNDER TEST STRESSED WITH ALL OTHER PINS TIED TOGETHER GROUNDED.

16 PIN UNDER TEST STRESSED WITH ALL OTHER PINS.

17 START 100V WITH INCREMENTS OF 100V TO 1000V. THEN INCREMENTS OF 250V TO FAILURE.

18 STEP STRESS TEST WAS PERFORMED HOWEVER ACTUAL VOLTAGE STEPS WERE UNKNOWN.

19 STEPPED FROM 1800 VOLTS TO FAILURE IN 25 VOLT INCREMENTS.

20 STEPPED IN 100 VOLT INCREMENTS STARTING AT 400 VOLTS.

21 STEPPED IN 2.5 VOLT INCREMENTS.

22 STEPPED IN 25 VOLT INCREMENTS.

23 STRESSED IN INCREMENTS OF 20% STARTING AT 16V FOR MOS DEVICES AND 70V FOR OTHEKS.

24 TEST VOLTAGE WAS INCREMENTED FROM 100V TO 5500V IN 100V STEPS.

25 TESTED TO 2000 VOLTS PER METHOD 3015.2 OF MIL-STD-883.

26 TESTER IS A MARTIN MARIETTA IN HOUSE BUILT.

27 THERE WERE ALSO 100V INCREMENTS STEPPED FROM 100V TO 800V.

28 VOLT INCREMENTS AS FOLLOWS:100V TO 1KV,250V TO 3KV,500V TO 6KV,AND 1KV TO 16KV.

29 VOLTAGE STEP LEVELS 100 VOLT INCREMENTS UP TO 4000 VOLTS.

xvi i

SECTION 3.2

DISCRETE SEMICONDUCTOR SUSCEPTIBILITY TEST DATA

373

RAC ESD Database

4) '

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377

RAC ESD Database

(A (fl' (U 0 4) 0l w 0- 4) 0- 0) V% ~ 4) 0- w) o!2 !2 -. !2-

(U m( (U (U (U (U(Uo

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c L L- - s

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0 tc In 378

RAC ESD Database

4 0' 4) 0, 4) 0, 4) 0, 4) Nj 4) MI w) Nj 4

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(A~Je N N, N, 379

RAC ESD Database

4)1 0) C) 0 0> 0' 4) .0' 4 0 ) 0'

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380

RAC ESD Database

4) in01 o. 01 4 0, w4 0' 448)4 0' 44 OC))-' 82 1; !2 :a !28 2 m~ !2 m

o) 0 n 0 0 ~ U 0 0 0 0

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381

RAC ESD Database

.0 0 CD 0 01 .0 C. 4) CDC .0 Nm 0 CD 0 C

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RAC ESD Database

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4 0 4 0 43 0 3 040 C3 43 CD3 0'

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383

RAC ESD Database

C E

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t - f .-4 t: 0. f- (4- 00 0 0

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CD4 CD , )0CfnF. P rI -10

(V 4) 4) 4 (1.

0.00 384

RAC ESD Database

41 15

CD cmC DC D

0 L\ .0 . 0. .0 0 . . .0 - . (

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(U.C .385

RAC ESD Database

Lo L

L. N .0 m O N .C CDC CD CD 2OCOC

C0 0 3- 2 0 00 0 0 0

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RAC ESD Database

-(0 0 14, 0 ) 0> 0l 0D d

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(A0 z 0) CA (n * 0

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0D 0 0 0 0 )

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387

RAC ESD Database

-0 ~ 0 0 0v ((""(ci

U c (D (v -C (%j C) -C(U(

o ~E0 0 0 0 0 0

00 .9-0- u - L) -

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CO0 0 0 - 4 0 0- 4-C0 C) D o CD CU C(A~0 ( CDl C0 0 0 (C) C

ch 0 * Ix *n Nn f0-LO 4 (A (A 0(00n0~ 0 n( ( A(0. 0(m0 0 0

4,1 2e In ) n /

4'0 CD ~ CD CD -- m

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0 ((v 0 N' N. '

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388

RAC ESD Database

- 0

L0 L

U) nO 4) I\j 4 )C 0o c) CD un Ci. 4)-2 In Vi - ) -- ' a ) n -

S -w (0 a l m~ m a (u 0I u

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RAC ESD Database

'o F) p C. CD 0D CD

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390

RAC ESD Database

(0 CD3 0D (, CD 0C0D

(U (U (U (U wU(U(0 8 8

43 4 00 0 0

L) u uL u Lu L

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2 2 2391

RAC ESD Database

00)

fl CO fl a- fli CL fli fl

0 0 o 0 0 0 0 0 0

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C) C3 f. a00. C> a cll ;2 'J -

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0 oO0 U3092

L ' - .

RAC ESD Database

.0 0 0 0 0 .0 - 0

(V( V( V(

U j w(V

0- 8~ 8 ~a a a u

4) r-4 0 : 0 0 0 0 0 n 0 C0 0

0

4' w -ju(V 4 4C (.1 (A

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

0Ur 01 00 r 0 0-

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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405

RAC ESD Database

-W C lLnur, LnWto r4e m CM .0 -

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to ol. 4) 4))U)0 C) 0 C 0 C) 0 C

406.

RAC ESD Database

-v LALI Mj Oj U -0

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RAC ESD Database

-t4 0 0 0 0

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408

RAC ESD Database

L3L

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LiMj eE r' E i E E r'i Ej El r' rV E L

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PAC ESD Database

(LI 02 c) 4) 4) C \J a)4) 0C ) 04) 0 4D 0)D C

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4)410

RAC ESD Database

L L.

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u u u u u C) u u

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4-' (II0 -' ~ 0 -' 0 4 04110

RAC ESD Database

ch 4-4 (0 (0 00 o0 (0 CD (U

a)0 -4- 0 0 0 0 0 0

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412

RAC ESD Database

cm rvs cm-

cor 0,0)L

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RAC ESD Database

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RAC ESD Database

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4-415

RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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(421

RAC ESD Database

L rf A 00 Ln - i5 A Lfn - Xl

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. C'J r.0 C. -0 (.j (.4 -0 r-0 .4j .0 .4 ('4mC (0C co CD CC (o CC 1

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RAC ESD Database

01 C)i (~J r)(1j C) r' r.i C) Cru)t'J 0_x L.C' U0 rn .0% Nn U.0 U 0 N . N LMCO C0 -0 CCV CV i CCV (Ii M)

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RAC ESD Database

fl L' fl f\J m C~j fl c'J(i fl -- fl 15f .

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425

RAC ESD Database

CE

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0-~~l C ' 0 cli 'L C

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A D cm) 0, 0, (-1 0 0 CD0) 0P' fl) (N j (Ni ('n (Ni PI)(

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X z

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RAC ESD Database

~J 0

C

0). ) 0 ) ~ 4 ' ) m 4 ' 0 ' 4

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a. 4) 4)4274

RAC ESD Database

0 0

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C-' CO CD 10 C3 CO COCoC

0-A C3 C. Cl -. n -> CDCOCA, co C

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AO4,- 4,*.- LA . LA *.- A *' LALf~ A4L0.0 0 ~ 0 0 0 - 0 - 0

RAC ESD Database

C

40 4-' 440(0 0 (0 w0 CD0o0 CM v i z) U N0C)0

0- i-u u U -

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RAC ESD Database

w** 0~ 2' Ia* ) 0A LA

o C- S 000

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w)0 . 0 0 0 0 0 0

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w) 0 a) 00ce of2 C) co wJ M

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r') r-n-C

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RAC ESD Database

cx

4) C ,O 4) a, 4) (1 ) co 4) 0: w) 0' 4) CD 4

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431

RAC ESD Database

L CjC' c

V)(f E u 0 u 0

u L. 2

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0

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c-0 co co co0)0 0)

(U~~~~* 0)A* 0) 0)j tL L AL A . A .0.00 -~ 0 .- 0 - 0,

432C) '

RAC ESD Database

L- rq -4 !

Fn. Lnp .1

4) C) C))~ J 4 ~ 4) O ) O ) O

C. 4~0) . 0 0 0 00

04

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Co CD 0co'Co C0 0 CDGof

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0) Iu 0 - 0) 0 - 00

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ixi

C/ z

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RAC ESD Database

t'Cr:0 '

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c 0: 0 'x eJ cc 0: '

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4) X X z U

w u ~0' '0 ' 000

m-A 0 0 0t 0 ot o

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434

RAC ESD Database

N 0 ~ 0 Mco .m D mu (omc

0 Em 0 C0 ('j 0 5 0 0D 0 C~ '0- = r -* - r - C

o3 0 S 0 0 \ 0 0 J 0 0 \

0

00

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RAC ESD Database

rn tn pn VI-1 n nF ~

0 1 'aE c ~ ClC4 el ' lC VE nLn L L1 0040v4m C CjC1 ~

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'a. CD a, a, z~ 00- 0 2 22

3E x a436

RAC ESD Database

c E

C ) C,0,)nC

-0 (-- 0 rsi .0. - 0 c -i 0 -0 r~I .

o iE u u U U UUu

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4-37

RAC ESD Database

C) 0

CO a

_0 C' 0 . )-0 -o -0 0.

a, a) aa

C- l C. 4~ -j - ~-< C) C) C) C) <) c:) <

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RAC ESD Database

C E

W) C) CD 00 ~ C ' ) (J C C) C) (' C 0

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C) -) -L:0 00C

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RAC ESD Database

C) a)0 C o ) 0 C

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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RAC ESD Database

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C E

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RAC ESD Database

10 m

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0)460

RAC ESD Database

C E

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470

RAC ESD Database

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RAC ESD Database

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RAC ESD Database

(. !2! 2e

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474

RAC ESD Database

.X LM WN LA Ln LA LA LA LA uLA Ln LA ULA Ln LA LA LA LA LA LA(V cl Al i Al (U l l A (U) Al ('IA SJ Acll Al

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- 475

RAC ESD Database

CE4)4)

4) (ni N~ C'.) N~ cm N~ N~ N J N NCSJ mN C'J N

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476

RAC ESD Database

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0)'0

CA tv & & & &

0)01". C' ~ . '~ '. '477C

RAC ESD Database

C:

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478

RAC ESD Database

-he LnL

414 .- w- 4 a aLC L 41-N .- w 01 c- (U.M0

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479

RAC ESD Database

0 MIC 0, 0 v NC 0. NC N t~- 0 r ij0 C tJCCV Cd) C. vi) Cd, C) LiA -n Ud6

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480

RAC ESD Database

43 (

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481

RAC ESD Database

~ 0 0 0

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RAC ESD Database

L L

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rnbN fn pApA pA p pn mA

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RAC ESD Database

01 e( 0 J (

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UN OCCC C)C C)A U C-M z-). z. Z C) zS . (10

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C8

RAC ESD Database

pn CDCD..P-

0) 0) 1 ) O 0 ' 0

wU 1XI CU 3 C, CU CUCU,At 10 c UUU

C- L .(u CC 3C>r

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486

RAC ESD Database

L % LnL %V

M) zA .0 0m 4)i N ) ) j

m co m U U

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mm

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487

RAC ESD Database

0 (AL~J' C " ) \ ) C) a, Csj ) \ 0 C3 C).0 -~ ~ rq -0 e. 0 C" 20 r' -0 .0

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Ch (A (n-u C o-C c C) 0 ) C) C C) C CD C ) C CD0 m (( 0( C) m(D U C) 0U C) ( C) m C) (U C) (Uma ) f- W ..v L

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LA Ln (ArS (

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488

RAC ESD Database

le LnL nV

4) ~ ~ ~ ~ ~ ~ .U)~ ) 0 4 ~ 4 ' ) C' r~j 4) e' 4

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0. U) 0 ~ U) 0I U) U 0 U 0 U

'S ' E .. 'S E 489'

RAC ESD Database

CA~ CD 0 0lC C(UU UM-. ~

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0 L 0 .0 .0 N 0 .0 ' .

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0 D N m L 0 ' 0' CDe

vs -.' ' 0 '0 '0 N NJ l N Nm Nl Nl N N

490

RAC ESD Database

Gd0

cq .0

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0+000 + 0

TW LU ujLSLU uLui

() 9- r

o 0o 0 0 mC 0 m

ui~~ w0L jLJLJL

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fy ccadc woei

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m0 Gd 4. G df - LA 4 A 4 A Ln 4-% IA Ln 4. L0.0 n cc-

in 'A 2n z z 2 2A U Gd (A m (A ( (A (A (A (

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491

RAC ESD Database

U3 C- ,C )C,0 ,0

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7 o ) o rn U n r) 0 ~ 'n a

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0' 0 0

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4- CDC-

) CD C) o 0' 0'CD CD C) 0 0~ 0~ ~

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492

RAC ESD Database

L i-

(U

0) ( 0 0 ) 0 0 ) \ ) tJ 0 J 0 '

a~M rraa , ac.0 c.4 0' 0 00

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a.J I i (ir r ~ ( i c-i

493

RAC ESD Database

.W Ln Ln A U 11 Ln L A LA - Ln VNU -N W%

U) 0 4 0 0 0 0

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430 I4. 0 gm 0 0:

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to.. AW .'., .' (~- LA C C.- LA

CL 43 1. 0

CAC(U (U

p4. 105 a- 5-0

z z z zZel 4.' 4. 4.'c

U U U494

RAC ESD Database

LA LnL AL n0

CE3

.0 L 0 0 0 .0

4) 2c X.

'-L.

U~LL 4- Li)4 4 -4 4 -4

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0 04 U o

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u C.' L)CO

CL z VL Lxwdw

4-0 C 0 C 0 C 0 C C 0 4. 0 L

(0 U) N. Nz U) z

eye v me:~ ~495

RAC ESD Database

0' (UV 0D r')-5 i -!2-

CA U) -u a, -- --

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ca m

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mLU U

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L- o ( 0 CD . La CD L L L CD.m C mU' Q t- 0D do 0c L. 0. CO 0 ' 0. A 0

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4#C 0) 11CU(i DM) -l ~V) CD 2 It C CD

LU~I 4-DV C-

00 E- N- r r- ;z - 12

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496

RAC ESD Database

0 .) l o- w coCL LI

C El

0 0 00 - 0 C 0 0 .0

+. - cc+

4)0 M4- 03 0 00 000D

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m ( - 4) (D4 % n g-Co. 22 2 2 -' 2 2

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Ci) CCC u0c-)LL

4-0 0 o -l 0l 0 0 0 -L. 1 4 £N £4i £4 cm .. cm

4-' C 4'-- C C 0 C 0 LC 0 C40 C7

RAC ESD Database

0' 0 l w C 1 l 4 yI

- -0 !2 1; VJ' 5 :6 VC\

W 0 LI 0 .0 - 0 .0 - 0 - 0 I .0 Ime 2c ~ mi wid idid i

cc (AEUUU

didi c-

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U- U U- - U-U- U0. - L

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di 01 I C- J 31 CJ La C. 3U Cu >ai di 3 3 C3 0 3D 0. CD 00. C > m

0 . L. CR 0.0 . - 0

0 0 0 0 0 0 0 0 0 di

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ad CC C-l pn e C- M C6

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m 06 K 0L 00 0 0

L(A (D (A (A (AM A i4-UCcl C-.- C- 0 0 C 0 C

U) '. a. ) Ci5

mA C -

498 U U

RAC ESD Database

(Uc4i ,0 0 ( ( UO.i c llrici ~ I

(0 0ca

U ) u S U LU u u U) U U u

(U -"uj u

C Q Q C o C3 C3 CD CC Cu

Co 0 > 0D C Lm eS AS U, U.% Ln Lm Ln Ln VACo LA L^ '0 r' 0. o 0' 0, 0' 0' 0

00

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(1) 0. cn 0n V). 0. L a U L. L a

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0 1. 0

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(U 4.- 4) (D LA A A LA LA IA LA L LA A

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00

499

RAC ESD Database

C

.)LL Ln vi VN viA LA L n U-%L Ln Ln nA LA L nL LA LA LA LA LA

P0 0 2

LA w w

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MC CA) CA

CAI ..t r-.. - -. r ..t - ~ N ~ No' 0 10 - p'LO

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ULA) C> C CA))D C C) LCD C) C) c) CD C)

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0 0 0 0 0 0 U0C4 C E4- 0 0 0 0 0 0 0 0 0 0E.40 0 0 0 0- _rC C .C - C .C _r_ _rE

A.L)P A A0 0 0 0 0 0 0 0 0) 0 0 0C 0 0 0) 0

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m A) 41 4IL t2 LX L L Ln Lc In LX2 t2 LX LX L

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4) L 0 A vi) U')l Ln LA ' A A L LA LA " UL LA LA) U)

50

RAC ESD Database

41 N~e Ln UN N- N- _6 N- N -NN n N u N - -L N N N- N NN

(V -C '(

4, N 20 I- ~ ' 0 C C O C O I '

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CA~ cc -(. U) 0 C. C) CD C) C) C UnD . C CD (Mn CD C 0 CD

mn.I a) 9- a1 a1 U2 a a a a a

(n LIe Q!~ 2z Of a, Of 0:2 : 0: er ad 2: Of w: Of

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50

RAC ESD Database

ol C4 A CA CAj cAi cAi rli 0.1 C) U~j MI ru

4- CUi ri CUe j Q C

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m) - - - -O Nr- N-l ?C2 1 ') 4 0 fl - '.0 N-

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502

RAC ESD Database

.L A (( Ln Ln in LA V% Ln Ln V% Vl% Ln V% VA Ln in W%

v,0 v% g -0 D0 c

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0-

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L 10(0 0100 0 0 0 0 03 0 0 0 0 0

RAC ESD Database

C E

C) C)V n n L

M) CD )C )C: D C) C

acL A LIc LI LI' 0-4) A L Lc I) L J)A L AA L

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RAC ESD Database

C Ea) w)

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of C) C. Of Cie(A ( ( A ( (Y (A cc 00. (A00(

4-' CCI

43)L 4.' C4) N-(j C~ \ , ~

CCO

N--

505

RAC ESD Database

0. C- i ( l 0 (jC

vi 4i, -. n P' - ;z 0 LnU Un

o 2 C) 0 0 0u0 i- U -W-W-

40 -0 0 0 c c c

0 0C'.- I-UJ I

U) -JNZ 00 0

+ U

m W I (n (n

V) o U, m e)0 0: CD 0) 0D 0 C0 0

~LU wL uij Lu J U UJLJJ J UJ~~( U') i -.. e

- 4.4.0. o- .L- 4 C

C >C

(A 0 - co m: - D -n 1.0a 00 0 n 00

40 u u* C-L >.000

W) .M 4-44- Z . 4.C 0 0 0

(U Q) 0-.C

m V

C 3 Ni m0 N\ N > Nv > N~ > Nm NI

0 c C ) 4) 4

Ly LU > LUJ L LU LU LU

0: Lf 0 00 0004 0

4-' C 0 0 0 0 0 0 0404 1: ( 4) 4)pi - e t - i. 0 n 0 n 0 n ec.1 C) CD0 0 -D 0 CD 0 CD C

Cn en en% 0n en enU

4- ce0t im 0 0 N n eP-00n C-) 0 rn )

en W V) X L (U(0 L

- '0 Nn ev '0 '0C)00 N V) 31 0 0 X C C

0 < c0

U- "I N1 -5 00'

506

RAC ESD Database

-W UL m L ^ L i L NI

CC

0 4, M Ln n A LU,% Ln Ln LAL-,~LALL-N Nl NN N N f N 0 N .

000

CO 0. 0 00 u

cJ 0 C C 0 C 0 0

LU- +

C Lu~ LU

CL g - U1, CD C)C)C C

w~ 0 Lm- mU1 LU CI-

1-L

C-C 0 CC,- CAin~5LU LU wL w LU wL 2 "090 0n 00 0 0000J

(U90 LA 0 LA Ln r2'% F(N.0

0 L

4 10 1 0000000uI U LU L L U UL LoL L UL

0-

0 L C

4- E

C 34D (2-N> > N0 Ni 0 N~44. -j -2 j .- -j ajC

4- LU LU LU L > LU LU 3 LUJ 3 LU0I D 03 ( ) m 0 0> 000'- 0 L- 0-0n un 0 Ic- E E U E 4- E E-

2- I 0 0 n 04-0 4- 0 0 0 CD 0 0D 0 C 0 C, 0m n4 W n CACAO 0 0D 0D 0) 0 4- 0 CU 0 ((U 00. 0)4 OLA LA LA LA LAn . LA 0. LA 2 LA 2- Laoo 0 0 0- -

Q)D 4(A wA () (A (n VA CAcn

I.- (UL LA L

LU u W

0- z w

20 0 1 0 10 N ~ 0

(U0 0l Nnf) mo

50

RAC ESD Database

LIx.

-. 0' 0 ' - 0 - 0 0 O

0

LCJ LiLU Li

CU J LU LU LU LU L L L

Of . m.N . .'

a OF z) a i C.

0 0) 0e 0 0e 0 E 0

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0 u 0 L (A 0 Ch . L

"0 0 0. 00

u A A CU CD 0D CU CD0C0 ( OCD L C) CD Ct) L CD L) m'L U

C-I

I L-C)(A C) (A C) Ci) Cin

I-0I.~~~ U', PI-'~ C) ' 0

0 C 0, 0, 0 0 0 c0

wU' 0 C0 C

508

RAC ESD Database

. ~ 0, -, rn m~ W) -n -. ' - .1

0 fl 0 0 0

L L

0 4-' w 4)J 4-' 4- 4-' 4-

4) 4-00 0 0

(L)

o 0W L4n U L4U w U) ) V) V) (n (

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CD CD C) C3W W> U C) CJ C) C)

1,8o oD 0)C 0 0 C 0 CD 0C

0 00 00 0 0 0 0n

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0 ~~ 0Z 0w ;0 :E

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0ni in 0i ini I0. 0. U. A).A 0..0 0 .

in-0 0 An CDAf m( CD CD C> CD CD CD C3-4 CDC-C ) D C D C

0 -t- I(

cm 0fL - 0n 0 0 0 0 An 0

tc I- 61Nt ~ - s

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0. CD C, 43~~ 0.(U

o r' ~ ~ e' 3 (.1 \J i.1

in en

1- 4),

inI in w1-N

(iI 4)51 n i i in in in n n509i

RAC ESD Database

(AI 01V !2 :2 .1 t ! : :

a DC Dr MV

.0 LC% (M ci -C CD DCD0- CD 0 t^ CIn

0 - 0 c 0

U U

af w cc co

f43 I--~4--

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402 ZU. L

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L- 0 0~ Q C I

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C-w CAi 00c m -c~ to

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10 43 43 1PI.- of

43

U) -

40 '0 04

CO C

C3 C? C A

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L- > I It LU

0"10 -

510

RAC ESD Database

c 3 C 3 C

ii~ 0 0 n 0 I 0 0 0C)) L CA L

4, Ln

0

cCC

Lu Lu LU Lu u LUL LUJ WL

4-4- LALA L LLA Ln AL

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LU LJ LULU u LLJLLJLU

a uL (nL -Z (A me 0 A U) (A (A LA z LL A n L f L: N L: I. L. CD n L ^

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>> N > N > N- > Nl > N > Nm > N!f v) .- 42 -4) )j (D 4)4 4)0 0 0 0 0 0 7 041 LU LU LU LU LU U LUO 4) U 0 U p 0D C 0 U 0 0

4) 0- 0 0 0 0. 0 0 0 0

CO000 0 0) 0L. 4- (D 4- (D

u- 0 0 Q 0 C, 0 C - 0 C) 0 0 CD 0CL 4) 61 ( 4) 4) 4D ) D 4) CD CD 4) C4)CD(

C@JP 4 wLn 0. LA 0. LA 0. LA% 0. LA 0.L A 0N a-0. L0. 0 0 -0 0 0 -

m ) (A (A LA CA CA LA LA

LU LUL U UL

L- L- Me: n1 3 13 :13l : , 1 2 14- 4-LILJwLJLL i

3- 0 0 0

0 0DCDC3' 0CD ' LA '4 03') 3' 3') ') 0L

511

RAC ESD Database

L- m~ -2 - vi-P.

.0 LC.J .0 t' . Ci -- 0 C' 0 - 0 ( 0

0 + 4 .)UU

Cl C)- f.- 00 0 0 44

(U CI - C

U0 0 2

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c >. '.-.

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4- c - - U 0( -

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(U 02 0 w0 (U W 4)

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2i 0) 2 ) 2 4c CDC 0 CD 0DC

CA A (AC. c C) co- Cf . Dm CC)C

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1- 10 l CD CD ('.0

(UjLr 0 04WI1.. 00Lfl

52

RAC ESD Database

4, m

LU~L 4-A LULUMUo~m (00 mi

0)00

00

ixL- - Co r-4 cO, C>' Cl C-' C, Cl

0)0 C)- r- 00 C : 0 - C 0fl

LU L.u w L L

CC

00f' - - -

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0j oo= w o W-

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CD 0 0 CD CD 0 0Dc C 0 0l 00U 0 0 0D- C lC m C .m Cm C V) do. w 0.. Cr f nLnLIL

o. Li) 0- (

cc Pn L) Pn c 2~ en Of' ELU.(n 0)(A~0) r( c ) C(* '-' 0 * 0 0 0 - 0)

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uir CD C3?) fn) W)

0)'CDCD !2

C~~~~r '-1 NJ -I - -lIz - 0i0-u u

0i 0

513

RAC ESD Database

0

SL C 0- - li~.0 CD. <0 -C .0 NV .0i .j -C .

U 2~C W UCUCDU Uo In 0 0 0 04C. 0 0

Ln C.. -A -o~~L r44 Ln 4)4 4 4444 4

4)0 4 0 0 00 0cm aaa

> +

Cl c

Cocc L.Cf

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mJ Lu Lu J LI Lu Lu L L

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C C, C3 0

ZO CU CU CD m ,C CUa C4)D C L. 00 L. Ci

L I 0 I L, LAL

cco 0 C) CL 0 0 CA 0

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K~~~C 0 10 0 - C - . 0 U- 0 U

0. LA 10 0 . LLLC.

-0~~3 x) xnE2E0 n 0

CCI U. ~ .C CI . In C I .C514.

RAC ESD Database

00

4-IL Al A0 .0 0 ~ 0i tv

0~

m C L. L.-

(D -4- 0 0 0 0 00

EL

0 +

0

cc0 0w 0 cc 0:0I tlL000000

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r44 -jm j(A0i >

cc cc 0: cc 0:(Li 8 - N -1 N 'INN

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w 3E CI 3E 3E X: :

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0 0 0 L I.

0A (A C (A .C (A0 A . A . A . A .0 0 0 0) 0 0 0

--U . Di C 0D C 0D C 0D C 0D C 0D C 0 CL-. (n4 UACA U 0 go 0D 0 0 D 0 0D 0 D 0 AD0 0 0l 0L 1.- LA L LA -. L - L- L LA L

a)41o oo 00 o c(A- L.'- LA- LA CA LA LA u

LU LU LU LU LU LUi wi

0p 0 .4 C)

NLA2 L2 -O 0-Co I. 0, 0D 0 0 0:

0 2 LU LU LLU LU LU L0. z z z 2 z 2

515

RAC ESD Database

w n~ C'

\0 CCUj cInCEL n jP

00

c.0 C-S 0 CN 0 CS 0 0 0 .0zU 4' C UC UC UC

+

o L

CUj-K LU (AL- uL

CUf C) C-) C) C-) C n ) C)

010 00 0) 10 0c Lo

LU W "I LU LU LU LU LU LU LU

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2e 0

w ~~~ ix cc2 cI zc

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0 00L- 0 7C 07

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(a C0 C- 03 C- C- L ) C-

o in 0 in 0 o in 0 in o in inc CU rE EU .- E E- U U C E -

0 - 00 0 0 0 0

C-i cU in i O CU 0 U 0 c) CU c CU 0 0 C emo0C L - ej0Ln L C-

CS)A o. cc-

in v) (A on in inon in in iAV cn in on (n

4-' ac of) (it. a:- '. S

3 v 0 'T 2 n 20 LA 2 20

0~~1 10-C 2C

in 10S CS10? L ' A'

13L LA LP( nv A (A

516

RAC ESD Database

C EI ) 4)

C)j C) 0. 'l

w)0 -'. 0 0 0 0 0 0

C

m) C.<

co M) 0 1- LDC)

10 "\4 "4"4r

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LO3) CCo

Cn() v) c-:20 0CC)

3: 0 Ci Cau

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A U 0z u C) XU LU C) xU C) LU C)0 0 '-j C) aA z) ) )

a -x: xC-'xDu)c

(n 0 0) C0 t - C 0

C-C C CCC C C) CC C4-U '--C CenC C) VV C C C C C

C) "4 C

CA - A(

LU~l -C) ~ - P) '0"517

RAC ESD Database

518

SECTION 3.3

PASSIVE COMPONENT SUSCEPTIBILITY TEST DATA

519

RAC ESD Database

L)1

0

4) m SeJ\ ~ C.(J (JJ\ ) (JSJ (j~ \(J'J 4 'IJ'

(0 4 0 0(

o 14 m 0 0 c k fc cm CY Q ew i y 0

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4) 0)~ C)C L- & 4 U 4 . &U 01 O 0.- 01uU a U.U a a aL.L.

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0L)I0

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0 0!00. -x - CD C-D)WU)4' U

14 14 0 ~ 51 0001 0

RAC ESD Database

u, u

ELL 'o tot o ot

4)) 0.0-

0- -0 a------------aL au- Li

m 0

CL (

to 0

cl2 0m t iI

w4)1000 0 000 00 00 Ln 0 0

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4- j'n fl (A A V)J (nC CAC -(A -J V0 A CA(~l V)AC CAC ) nA (nC V) V)

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in m~ (.3 LOL (A UA

wU LU LA o

m - LJ -00 0 0 L0i4 - .

C4)1

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1'3 CD- 0

4)2 X'-LA

522

RAC ESD Database

- co CO CO CO c OC 00 000 0o

41 (A(' LA C- (4 41 0 & 4 N40 'A 0l

>. 0 u4 u .t

.0 0 .0 .0 0 .0

o o (A U.U

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LU L.J -j -L -L Uu LI

0 0 0 0 0 0 0 0 00 0I- Ix cc. I- (X oe w--

0: f CD CD 0 0D0 0D00 0

0D 0 D C 0 0D0 C 0 C>0DCLJJD CC LA C LU LU% UL L LL LU

CL L LU LJ LU LU LU LU L J LU

I- 75 w- V- V-- I- (n( C/

0 0 =! (A V 0 0 (n

LI, LI, LIU, U L LI LIL L ,LLI LI,

4( 0 0lzZ

00 0 0 0 0 0 0LU LU LU LU UJL LU UL LU

4- m CDJ 0, CD 0 0CJ

(A 0) 4p 0 000 f 4) cc e

> .>. 0 0.0 > > 0

L- 0 0 C 0 0 CD 0 (A 0 00 C0(A C

4) 41(AV1(A(

4- m I-

m -- -Ce < <

41N - r 0 A 0n - N *-

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I I - -

LI" U U. U. U. U. . . .523 U

RAC ESD Database

(U~N Ncm Ni N N N N

0

.~0 N ?n .- N - 0- -10 C4 .0.000.

(U~~ m-( mU( U(

04 0 N N 4 N N 0 0 0 0 0

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of w w W cw ee w f wO

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0 0 0 00 0 0 0 0 0 00

c- 4c <- -C

CDu LU LU CW LU LU LU LU LU LUD

in 0 0 0 in 0 0 0(3 0U 0i 00 0u 0 0 0U 0i 0 0

0~~~~V 0(n00 0-(-3 (4 -3 ((4 4 (4 0 (3 (- (- (-a4 4 44 4 4 4 4 4 0.

LU LU, LU LUW ' LU LU LU LU LU LU U

4-' exJ w4 0r cc.. a: W4 oc0 .

mA (A = .m m ~ 0 z

(A 000 0 0 0 0

Z

E; E E E

0 0 0 0 0 0 0

(A (A)j 0 W(A Z D c 0 0 CD 0 0 0m > 0 0 0> CD 0C0, 0. 0 L4 06 0In- 0 *

(n(A C A (A -(A (A (A (A (A (AW

A..- P,..m-0 4 . 0 0 ( 0 CD 0 0 0 (A 0, 0D 0 ( 0D

L()5A ( LAO 0 ( 0 0(A 0 0 (A 0 0 (A3

(U0(Un t00 0' (M 0 U ( 0 (ao ~ .- a -a - .- a -N Ln ar LZ;l.C

(A I ~ J 0 0 0 0 0 0 0

O(Uj 1-1-0 U 0 00 0 0 0 0

(A4.A LA ~m- ICU z z NK ccuNN N

. 4 1-0 0 i L" 0 0 5 0 0 . 0 0 .

(U'4-44 4 524

RAC ESD Database

) 0, 'n .0 0,m.'oc( x 4 10 0(

0- -

m '4 CSj( < (U i It al -~ -C C

w)0 24-' 0 0 0 0

0 00 0 0 0 0 0

0 ) (n ) (A (nU CA E U) (n cnU U)uJ ju LU U LU LU LU LU LU W u

(0 0C i LU LU LU ULU Lu w LU LLU LU w-

U)n U)nc U) U) c n ( U) ( w)U +~u) in U6 U)U WUn() (n () (nU Un 4-0 0 0 0 0 0 0 0 0 0

*-LC) L)> LD U L C . C.) CD CD ~ LiC C

4310 0D 0 00 0 0) 0) 00 al 0).1 0l 0l 0 0A 0 00 a 0 040tU 0 1.)0 'T U) 00 00

LU LU LU Uiw LU LU LU LU LU LU LU

U) , U) r, -r U 'n. .-. Um L" -n 'r U)

U)U 01 U) co U N) U) U) U)U) U)0*

L 43

4)41

(p4 0 0 0 0 0 0 0 0 0; ~ ~ U) .- Ci C,4 4h (U CUC) 4-4

4- 4- a-

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0 AU) U) 0D 0 U) 0D 0, U) 0 0 C> 0A 0 CD 0 C43L0 0 0- 0 00.040

C4m 4) w) (A 4)G ) (6 V n

4-' 0 0t)4() 4 -0 0, U) 0A 0n U) % 0 0 ) -N UL ) U U) ) 0 U) 0 0U 0 0 0 )0 0 U)

L. L) U)P~p-U) ae .- 4U U) U) )U ) U ) U0(0w 4-4lU U)U ) ) U U )

U)525

RAC ESD Database

rn.i f---- -. i C4 r4 N NI Nl

- V .LA LA LA L L i ULn L InA.0 LA It.0.0

0-l N- -, t- I" r-P . ' : %C -C (U -. I- . '. < N D < C, CD < C lC

40 0 4 0 0 0 0

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cm a:crc0 a: 0 00 0 0 0 0 0: 0 a -sI

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F)0OZ O.OEE w u ww u.,0 - u

C- 00 + I-- UJ W LJ 1.-1.

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CD) C>CDCDC C.) CDCD CD C D C;CD100 0000 00 0 00 0 Cgu oo 0000 00 0, 0, 00 0:

0 0 00 0 0 00 U(0

cr -100.0. 0000 0C0 0

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>I 0a >U>)m 0 ) ( ) U) CD U) V) ( U )D

CLZI 43 0- Ix

In. LA (A CA LA LA

0

.00

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526

RAC ESD Database

45W~ M ~ JA N"J rAJ (14 (m NU cm Nl t

_u -0r Ln . ' ' '- r

.0 0 -0 0 .0

C 10 a 0 00 0 0 0 0 0 0 0 0

01 Ch. (A0 nw(6 E h C 0 0 A

0 0 0 00a 0 0 0 0 0 0 0

C -< -C -x. <

LJJ Ln C, CJ LU U CD LU CD L

C75 wUL LuiW LU LU LU LU LU LU L

cl0 00000. 0. 0 0

Lm CJU 0" LI" Lm WLILn U

im im wC z wC ix Ix418 00 0- 0 0 0f 0 00 00D 0 0 0 0 0 0 0o u

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w1 L )I

1 0 CD - 0 () 0i 0D 0 0 0 0 C) C

m~ z 00 0i 0 0 0

4A11

0. 0 X 0 0. 00. 0 0 0

(527

RAC ESD Database

..

0

-8a m"'a8 LA - Ln C, C)L CD AL C5 0 ) lA

) L l (~ 0 r' 0 0 \ .0 t. 'JJ (J J J A

( - U U((UU

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0.2 0 pn 2l . P o

C C,I 0, - UNi 00

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528

RAC ESD Database

0)

.0~~ .CS .0 .S .S .S 10 s S 0 S 0 C) C) CD

0 '0 0 0 0 0

0)0

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04D C)) CD 4) C) 4)a' ) D C0)0 -4C'Cl 0 0 D C0 0 D

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c W ) 4 (A (Al .~ 4 (Ai .4 4 (A cm (n M

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OF --. --

0 0(A ( (A A 0 0A( n (CA w0 0 0 0 0 0n 0A In 0A (A 0(n

L A ce) I.- Cs Cr CS C CS) :r -y XC CS z

COe

U h kn 4- 0 0 0l 0o 0l 0) pn CA 0 0

ao a -)- ~ 0 co P- r- toa

(n C) C3( CA CD ( (D CA (A CA C> (A (

0 I

0) r

'00'

(A LA u u

529

RAC ESD Database

U. N ULNLA% ul Ln LA % LA LAl

0 £SCJ .0 N . .0 N 0 0 N 0

)

w~ ex0 a oc LA: LALA

U ~ ~ ' w-~ )4J4 . 44 -

W0

Cu

0el00 0 0. 0 0. 0. 0-

Lm LU LUL Un LU LU LU

4) (

22 !0 2!

LI.j LI. LI. LI

do - C, LD C, CD C) C)Y-

0/ L/C 0j C/ / 0 C) 0 C/ /

Z0> 0 > 0 > 0 0 0 > 0

u 3j 0 0.0 C 0 1 0 C0 c AU) CD th/C 0 C 3 0 0 CD 0 C D

4)4) Cu 0D Cu LA Cu LA Cu LA m LA Cu L

(A VCi)(ni(ALOn4i cn ) Li)U Ci)w

4)~ Ci, Ci i i

0-L.c 0 0 0f 0

'o. '0 LA

Gu CAI 0 0)I tI tI

L w

00 03 0 0D 0D

LA 0-0.3.0 0pn CQ LiLiLiL

530

RAC ESD Database

.. In -, V LnU

0 0 0

o- -u-

a .0

mLcI L

a)0

ul i

0 0 0000, (aLL - i - -i

(A~~ 0 0 C00 C A C) 0 C

0 m

L C)

0

,

W ) (nW C ) n4-m ccI mXIXI

CA 0o 0

Lfl 0I 0- CII 0 LI

C) OC)

100

, - cnI CI0. 41 0 a,

OIX u L)m~ ~ 2cz zm- Z01 r ei

C)~jC/iC/i 5 C1

RAC ESD Database

532

SEC'FION 4.0)

P~ART NUMBER INI)EX

533

RAC ESD Database

Part Number to Page Index

Part Number Page Part Number Page

ERL-05 525 CMF-60 523OP-07 363 PTF-60 527ERL-07 525 PTF-60 528DAC-08 321 EMF-60-100 524MF-1 526 CMF-65 523MF-1/10 526 EMF-65-1 524MF-1/2 526 hPWR-6503 512MF-1/4 526 IMS-AI00 331MF-1/4 527 IMS-C004 331

MF-1/8 527 IMS-COll 332MV-I0B 515 IMS-C012 332MD-1151 513 HLMP-D400 511IMS-1203 329 HLMP-D600 511IMS-1223 329 IMS-G171 332IMS-1400 329 HLMP-KI00 511

IMS-1400 330 IMS-T800 332IMS-1403 330 LH0033 335IMS-1420 330 0042 57IMS-1423 330 LHOO70-2H 335IMS-1600 330 VP0109N2 517IMS-1601 330 0181A00361 521IMS-1620 330 0181A0036S 521IMS-1624 331 0181A00371 521IMS-1625 331 0181A00371 522IMS-1630 331 0181A00373 522HLMP-1700 510 REZ01CH 367HLMP-1719 511 REF02CH 368IMS-1800 331 04-92 375ERL-2C 525 045B0 57TIL-24 369 06-92 375MMF-2402 514 072 57IMS-2600 331 OP07A 364HLMP-3001 511 OP07AH8 364HSI-3273-8 328 RLRO7C1003FS 523HLMP-3301 511 OP07H 364HLMP-3401 511 ADC0800 309HLMP-3507 511 ADC0808CJ 309DLZ-5 323 ADC0811 309CMF-50 522 ADC0819 30)

CMF-50 523 ADC0819 310ERC-50 524 ADC0820 310MF-50 527 DAC0830 321EMF-50-100 523 ADC0838 310DN-50003-00 509 084 57CMF-55 523 TL084 36ERC-55 524 DAC10 321

ERC-55 525 MF10 358PTF-55 527 100 57EMF-55-100 523 LMF100 352

EMF-55-100 524 MF100 359QXTR-5916 516 LT1001MJ8 353

5

RAC ESD Database



LT1002MJ 353 SP10962 517LT1004MH-1.2 353 ENI1OA 509LT1005MK 353 LM1OH 338DAC1006 321 PALIOH8 36510070019-106 375 LM11 33810078119 57 11011 60LT1007AMJ8 353 LM11OH 33810082603 57 LM11OH 339

10082603 58 AM111 31010082603-101 58 LM111 339LT1009CZ 354 LT111AJ8 355LT1009MH 354 11201 60101 58 LF11202 33310102 58 LF11202D 333LT101OMH 354 11331 61LT1011MH 354 117 61LT1012MH 354 LM117 33910130 58 LT117AH 356LT1013MH 354 LM117H 34010146 58 LM117K 340LT1014ACJ 354 118 61101A 58 LM118 340LMl01A 336 LT118H8 356LM101AH 336 LT118J8 356LT1024ACN 354 119 61LM103 336 LT119AH 356

LM103 337 LM119H 341LT1032CJ 355 120 61LT1033MK 355 LM120H 341LT1037MJ8 355 LM120H-12 341FLV104 510 LM120H-15 341LTC1044CH 357 LM120K-05 341105 59 LM120K-12 34110501 59 LM1211 34110502 59 MTM1224 51410503 59 DAC1230 32210505 59 LM123K 34110507 59 124 6110518 59 LM124 34210524 60 LM129AH 34210525 60 PAL12LIC 366LT1055AMH 355 13-92 375LT!055H8 355 MCA1300PSJ 358LM105H 337 SPF1303 517LT107J8 355 13201 62108 60 LMC13421 352LM108 337 LM134H 342LM108A 337 LT137AH 356LM108A 338 LM137H 342

LT108H8 355 LM137K 342109 60 LT138AK 356

536

RAC ESD Database



139 62 1489 70LM139 342 1494 70

LM139 343 1496 70RC139 367 ENI14B 509LM139A 343 1506 70DG140 322 1508 70SE140 368 LT150AK 35614000 62 150K 7014001A 62 FLV152 51014001B 62 SG1524J 36814006B 62 SG1525AJ 36814013A 63 LT1526J 35614013B 63 SG1526J 36914018 63 1530 7014021 63 1530 71MC14029B 357 1533 7114046 63 155 71

14046 64 LF155 33314049 64 15530-8 71

14049 65 1558 7114049A 65 LF155A 33314049B 65 156 7114049B 66 156 72

14050 66 LF156 33314053B 66 1563 7214069B 66 156A 7214069B 67 LF156A 333

1408 67 LF157 334LM140H 343 1590 /2LM140H-05 343 1594 72LM14OK-05 343 15946 72LM140K-12 344 1596 72LM140K-15 344 MTM15NO5 514LM140K-24 344 MTP15NO6 514141 67 1678 7214511 67 OP16CH 364

14511 68 PAL16H2MJ 366145155 68 PAL16L2 36614519 68 PAL16L8 366MC14520BCP 357 PAL16L8A 36614524 68 DMPAL16L8ANC 325MC14557B 357 PAL16L8B 36614568 68 DMPAL16L8B2 3251458 68 PAL16R4 366

1458 69 PAL16R6A 3671463 69 180 73148 69 1802 73LM148 344 1822 73RC148 367 LM1822 3441488 69 LM1823 3451489 69 DG184 322

37

RAC ESD Database



DG184A 322 1N2837 3801852 73 1N2846 380LM185H-2.5 345 1N2892 380LM1875 345 1N2929A 380DG187A 322 IN2970B 380LM1889 345 1N2984B 380LM1893 345 1N2985B 380LM1894 345 IN2985RB 381190 73 1N2988B 381LM193 345 1N2989B 381198 73 1N2991B 381LF198 334 IN3015B 381LF198A 334 IN30173 381LF198AH 334 IN3019B 381LM199 345 IN3020 381LM199AH 346 IN3022 382LM199H 346 IN3022B 3821N1095 375 IN3023 3821N1124A 375 IN3024 3821N1126A 375 IN3025 3821N1202A 375 IN3025B 382

1N1202A 376 IN3026 3821N1204A 376 IN3027 3821N1206 376 IN3028 383IN1614 376 IN3030 383IN1615 376 IN3031B 3831N1733A 376 IN3032 383IN2158 376 IN3034 383IN21B 377 IN3035B 383

IN21C 377 IN3037 383IN21E 377 IN3037P 383IN21F 377 IN3040B 384IN21WE 377 IN3044 3841N23B 377 IN3047B 384iN23D 377 IN3048 3841N23E 378 IN3049 3841N23F 378 IN3064 384IN23G 378 IN3154 384IN23RF 378 IN3155 385IN23WE 378 IN3157 385IN25 378 IN3189 385IN251 378 IN3191 3851N253 379 1N3323B 3851N25A 379 1N34A 3851N2701 379 1N3504 3851N277 379 IN3595 3861N2804B 379 IN3600 3861N2813B 379 1N3677 3861N2816B 379 1N3684 3871N2818 379 IN3821 3871N2831 380 IN3821A 387

538

RAC ESD Database



IN3822 387 1N4152 396IN3823 387 1N4153-1 396IN3824 387 1N4154 396IN3826 387 IN416G 396IN38' . 387 1N4244 396IN3827 388 1N429 396IN3828 388 IN4370 397IN3828A 388 IN4385 397IN3891 388 IN4450 397IN3893 388 IN4454 397IN3910 388 1N4465 3971N4003 389 IN4467 397IN4004 389 IN4469 397IN4005 389 IN4471 398IN4006 389 IN4474 398IN4007 389 IN4476 3981N4099 389 IN4554 3981N4100 389 1N4561 398IN4101 390 IN4565 398IN4103 390 1N4565A 3981N4104 390 IN4566 398IN4105 390 IN457 399IN4108 390 IN4570 399IN4109 390 IN4573 399IN4111 391 IN4574A 3991N4112 391 IN459 399IN4113 391 IN459A 400IN4114 391 1N4614 4001N4116 391 IN4615 400IN4118 391 1N4616 400IN4J20 391 IN4619 400

IN4120 392 IN4622 400IN4121 392 IN4624 400IN4122 392 1N4625 4011N4123 392 IN4626 401IN4124 392 1N4627 401IN4125 392 1N4679 401IN4126 392 1N4683 401IN4127 393 IN4686 401IN4128 393 IN4689 401IN4129 393 IN4691 402IN4130 393 IN4693 4021N4131 393 IN4696 402IN4132 393 IN4697 402IN4134 394 IN4727 402IN4148 394 IN4732 402IN4148-1 394 IN4821 402IN4150 394 IN482A 402

IN4150 395 IN483B 403N4150-1 395 IN484A 403IN4151 395 1N486 403

539

RAC ESD Database



1N486B 403 1N5292 410IN4905A 403 1N5297 410IN4937 403 1N5299 410IN4938 403 1N5301 4111N4942 404 IN5306 411IN4944 404 1N5308 411IN4946 404 1N5310 411IN4947 404 IN5311 411IN4948 404 1N5312 411IN4954 404 1N5313 411IN4955 404 1N5330 411IN4956 405 1N5356 412IN4957 405 IN537 412IN4958 405 IN5378 412IN4960 405 1N538B 4121N4961 405 1N5391 412IN4962 405 1N540 412IN4964 405 IN5406 412IN4967 405 IN5416 412IN496T 406 IN5417 413IN4971 406 IN5417A 413IN4972 406 IN5418 413IN4974 406 IN5420 413IN4976 406 IN5463B 413IN4979 406 IN5467B 414IN5139 406 IN547 414IN5139A 407 IN5476B 414IN !'J 407 IN5523B 414IN5140A 407 IN5525 414IN5144A 407 IN5525B 414IN5146 407 IN553 414IN5148 407 IN5530 414IN5148A 407 1N5538 415IN5187 408 1N5546 415IN518 408 1N5550 415IN5190 408 iN5552 415IN5221 408 IN5554 416IN5230 408 IN5555 416IN5233 408 1N5556 416IN5250 408 IN5558 416

IN5250 409 1N5614 416IN5255 409 1N5615 416IN5260 409 IN5615 417IN5264 409 IN5616 417IN5267 409 IN5617 417IN5270 409 IN5618 417IN5285 409 IN5619 418IN5287 410 IN5622 4181NF28 410 IN5623 418IN5290 410 1N5635A 418IN5291 410 IN5647A 418

540

RAC ESD Database



1N5656A 418 1N752A 4291N5711 418 1N753 429

1N5711 419 1N753A 4291N5711 420 1N753A 4301N5711 421 IN753A-1 43n1N5711 422 1N754 430

IN5712 422 1N754A 4301N5802 422 IN754A-1 4301N5804 422 1N755 411N5806 422 1N755A 4311N5807 423 IN755A-1 4211N5809 423 1N756 4311N5811 423 1N756A 4311N5814 423 IN756A-1 42]1N5818 423 1N757 4211N5819 424 1N757A 4321N5822 424 IN757A-1 4321N6096 424 1N758 4321N6101 424 1N758A 421N6103A 424 IN758A-1 4321N6173 424 1N7591N6305 424 1N759A 4321N6324 424 IN759A-1 433

1N6324 425 iN763-2 433IN6391 425 1N781 4331N6392 425 1N78B 4331N64 425 1N78CR 4331N643A 425 IN78D 4341N645 425 1N816 434

1N645 426 1N8161 4341N645-1 426 1N821 4341N646 426 1N823 4341N647 426 1N823 4351N647-1 426 1N825 4351N649 427 1N827 435IN658 427 1N829 4351N6601 427 1N829 43EIN661 427 1N829-1 4361N6621 427 1N82A 4361N702A 427 1N914 436IN711A 427 1N9141 4371N746 427 1N916 437IN746A 428 IN933J 437IN747A-1 428 1N938B 437IN749 428 1N941 437IN750 428 1N941B 437IN750A 428 1N943 437\750A-1 428 1N943B 438

iN751A 428 IN943B-1 438IN751A 429 IN944B 438

IN751A-1 429 1N945B 438

541

RAC ESD Database



1N956B 438 2114 751N963 438 2141 751N963B 438 2147 751N964 438 EN12240 5101N964B 439 2255 761N965 439 OP227EJ 3641N965B 439 NEL230120 515IN965B-1 439 NEL230153 5151N966 439 NEL230154 515IN966B-1 439 NEL230163 5151N967 439 NEL230197 515

IN967 440 OP237AJ 364IN967B-I 440 2401 761N968 440 SD241 5161N968B 440 2516 761N969 440 2520HA 761N970B 440 2622 761N971 440 2650 77IN971B-1 440 AM26LS29 310IN972B 441 26LS31 771N973 441 AM26LS31 3101N973B 441 AM26LS31 3111N974 441 26LS32 771N974B 441 AM26LS32 3111N976 441 26LS33 771N981 441 26LS33 781N981B 441 AM26LS33 3111N985 442 2702 781N987 442 2708 781N988 442 27128 781N992B 442 2716 78MCT2 513 27256 782001 73 27256 79201 73 2732 79

201 74 27512 79DG201 322 2764 79

DG201 323 OP27A 364H1201 327 OP27A 3652023-10 442 OP27AH8 3652051 74 AT27C256 31120LID 74 AT27C256 312PAL20RA10 367 AT27C256 313LH2101A 335 NMC27C32 3622102 74 AT27C512 313

2102 75 AT27C512 314LH2108A 335 27S13 79LH2108AD 336 27S19C 79HC21OS-2R 525 27S20 80

HC21OS-2R 526 27S291 80211 75 D2817A 3212111 75 X28256 370

542

RAC ESD Database



LM285 346 2N2323A 449LM2889 346 2N2326 44928C256 80 2N2346 450DM28C256 323 2N2369 450LM2900 346 2N2369A 4502901 80 2N2405 4502909 80 2N2432 4502910 80 2N2432A 4502930 81 2N2453 450LM2930 346 2N2453 451LM2931 346 2N2481 451LM2935 347 2N2483 451LS129681 352 2N2484 451

LS129681 353 2N2540 451LF298 334 2N2608 4522NI-016B 442 2N2609 4522N1039 442 2N2708 4522N1099 442 2N2801 4522N1115 443 2N2857 4522N1116A 443 2N2857 4532N1118 443 2N2894 4532N1132 443 2N2896 4532N1132A 443 2N2904A 4532N1204 444 2N2905 4532N1308 444 2N2905 4542N1469 444 2N2905A 4542N1485 444 2N2906 442N1486 444 2N2907 4542N1596 444 2N2907 4552N1602 445 2N2907A 4552N1613 445 2N2919 4562N1642 445 2N2920 4562N1711 445 2N2945 4562N176 445 2N2946A 4562N1774A 446 2N297A 4562N1777A 446 2N3013 4562N1893 446 2N3019 4572N190 446 2N3030 4572N2060 446 2N3055 4572N2102 446 2N3057 4572N2105 447 2N3112 4582N2151 447 2N3114 4582N2198 447 2N3117 4582N2219 447 2N3227 4582N2219A 447 2N3250A 4582N2222 447 2N3251 458

2N2222 448 2N3251A 4592N2222A 448 2N3253 4592N2222A 449 2N329 459

2N2297 449 2N335 4592N2323 449 2N336 459

543

RAC ESD Database


Part Number . .q. Part Number Page

2N336A 459 2N3811 4692N3375 459 2N3821 469

2N3375 460 2N3822 4692N338 460 2N3q23 4692N3421 460 zN3823 4702N343 460 2N3866 4702N3439 460 2N3866A 470

2N3439 461 2N3868 4702N3440 461 2N389 4712N3444 461 2N3902 4712N3467 461 2N3906 4712N3468 461 2N3959 4712N3486A 461 2N3960 4712N3498 462 2N3964 4712N3499 462 2N3971 4712N3500 462 2N3997 4722N3501 462 2N4029 4722N3503 462 2N4033 4722N3507 462 2N4036 472

2N3507 463 2N4091 4722N3553 463 2N4118A 4722N3570 463 2N4134 4722N3584 463 2N4150 4732N3585 463 2N4209 4732N3631 463 2N4236 4732N3635 463 2N4251 473

2N3635 464 2N4261 4732N3636 464 2N4303 4732N3637 464 2N4351 4732N3677 464 2N4392 4742N3700 465 2N4393 4742N3715 465 2N4399 4742N3716 465 2N4405 4742N3724 465 2N4407 47421N3735 465 2N4416 475

2N3735 466 2N4416 4762N3737 466 2N4416 4772N3739 466 2N4416 4782143741 466 2N4416 479

2N3741 467 2N4416A 4792N3743 467 2N463 4792N375 467 2N4856 4792NJ763 467 2N4856 4802N3765 467 2N4857 4802N3767 468 2N4858 4802N3772 468 2N4858 4812N3791 468 2N4872 4812N3792 468 2N491 4812N3799 468 2N4931 4822N3810 408 2N4948 482

2N3810 469 2N4949 482

544

RAC ESD Database


Part Number Page_ Part Number Page

2N4957 482 2N6287 4912N4959 482 2N6298 4912N495A 482 2N6299 4912N498 483 2N6301 4912N5019 483 2N6379 4922N5036 483 2N6385 4922N5038 483 2N6437 492

2N5038 484 2N6438 4922N5109 484 2N6547 4922N5114 484 2N656 4922N5116 484 2N657 492

2N5116 485 2N657A 4922N5154 485 2N6603 4932N5157 485 2N6604 4932N5196 485 2N649 4932N5241 485 2N6650 4932N5245 485 2N6660 493

2N5245 486 2N6661 4932N526 486 2N6756 4932N5302 486 2N6758 4932N5303 486 2N6762 4942N5344 486 2N6764 4942N5415 486 2N6764-2 4952N5416 487 2N6766 4952N5524 487 2N6768 4952N5582 487 2N6782 4952N5663 487 2N6796 4952N5664 487 2N685 4952N5665 488 2N687 4952N5666 488 2N697 4962N5672 488 2N699 4962N5682 488 2N706 4962N5685 488 2N708 4962N5686 488 2N718 4962N5745 489 2N718A 4962N576A 489 2N736 4962N5794 489 2N760 4972N5796 489 2N834 4972N5874 489 2N859 4972N5877 490 2N869A 4972N598 490 2N886A 4972N6040 490 2N916 4972N6052 490 2N918 4972N6055 490 2N918 4982N6059 490 2N927 4982N6129 490 2N930 4982N618 490 2N930A 4982N6191 491 2N956 4982N6212 491 3001 812N6277 491 3002 812N6284 491 3003 81

545

RAC ESD Database



301 81 34050941-001 853015 81 34064597 86302 81 34054597-001 86TP3020 369 34056230-001 86304 82 34058472-001 499TP3040 369 34069508-100 86LM305 347 34371 86TP3054 369 344 86308 82 348 86309 82 IRF350 512LM309 347 351 8730FQ045 498 LNA351 5123101 82 LM3524 348311 82 LT3525AJ 357

311 83 LT3527AJ 357LM311 347 LF353 334TP3120 369 355 87CLA3130-99 509 356 873133-02-237-001 498 LF356 3343133-02-237-001 499 LVA356 512

TP3155 370 357 873158 83 LF357 334317 83 LM358 348LM317 347 MK359-1 359LT317AK 357 MK359-2 359318 83 MK359-3 359LM318 347 MK359-4 359319 83 MK359-5 359LM319 347 MK359-6 360320 83 3600 87

320 84 LM365 348LM320 347 COP370 319NS32082 362 373 87IRF322 512 373 88LM323 348 A377DJJ-00 522324 84 OP37AH8 365LM324 348 HS3860B 328NEC327 515 3870 88LM32800 348 3873 88331 84 DS3896 326TP3320 370 DS3897 326339 84 LM393 349LM339 348 398 88340 84 LF398 335LM340 348 LM398 349MJEC340 513 3N128 4993400 84 3N128 500

3400 85 3N128 50134001 85 3N128 5023403 85 3N169 50234049B 85 3N170 502

546

RAC ESD Database



3N170 503 4013B 1003N170 504 4013B 1013N170 505 HEF4013BT 327

3N187 505 4014B 1013N201 505 4015 1013N204 506 4015B 1024000 88 CD4015B 317

4000 69 40160B 102CD40OOA 315 40161B 102VN4000A 517 40161BC 1024001 89 40162B 102CD4001 315 40163B 10240014 89 40163B 1034001A 89 4016A 103

4001A 90 40174B 1034001A 91 4017A 1034001A 92 4017B 1034001A 93 CD4017BEX 3174001A 94 4018 103

4001B 94 4018 1044001B 95 4019 104

HEF4001BTB 327 4019 1054002B 95 40194B 105CD4002BE 315 40195B 105HEF4002BP 327 4019A 10540J6 95 4019B 1054006A 95 XC402 3704006B 95 4020 105CD4006B 315 4020B 1064007 96 4021 1064007B 96 4021A 1064008B 96 4021A 107XC401 370 4021B 10840101B 96 4023A 108HEF40106BTB 327 4023B 1084011 96 4023B 109

4011 97 4023D 1094011 98 4024 109

CD4011 315 CD4024 317CD4011 316 4024B 109

4011A 99 CD4024BCN 3174011B 99 CD4024BEX 317MCC4011BF 358 4025B 110CD4011UB 316 4027B 1104012 99 4028A 1104012B 99 4028B 110CD4C12UBF 316 4029 110CD4012UBF 317 4029B 110

4013 99 4029B iii4013 100 DG403 323

4013A 100 4030B 111

547

RAC ESD Database



CD4030B 317 4071B 1224031B 111 CD4072BEX 3184033B I1 4073B 1224034B 111 4076B 122

4034B 112 4076B 1234035 112 4077B 1234035A 112 4081B 1234035B 112 CD4081BEX 318XC404 371 CD4081BEX 3194040 112 HEF4081BT 3274040A 112 4081UB 1234040B 113 4082B 124HEF404OBTB 327 4085B 1244042B 113 4086B 1244043 113 COP409 3194043B 113 4093 1244044 113 4093B 1244044A 113 4094 124

4044A 114 4099B 1254046B 114 COP411 3194047 114 4116 1254049 114 4116 1264049 115 GC4117-85 510

4049A 116 LF412 3354049UB 116 4131 1264050 116 4136 1264050 117 RM4153 368

4050A 118 416 1264050B 118 416 127CD4050B 318 4164 1274051 118 420 1274051B 119 COP420 319CD4051BCN 318 COP420L 3194052B 119 COP42OW 3194053 119 COP42OW 3204053B 119 LM4250 349

4053B 120 LF441 3354066 120 LF442 335CD4066 318 COP444C 3204066B 120 4502B 1274067B 120 4503B 1274068B 120 SKA4504 5164068B 121 4508B 127

4069 121 4511 1274069B 121 4511 1284069UB 121 4511B 128

4069UB 122 4512B 128CD4069UB 318 4514B 128MCC4069UBF 358 4515B 1284070 122 4516B 1284070B 122 4518B 128

548

RAC ESD Database



4518B 129 IH5216 3294519B 129 5216B 1334520B 129 52832 133HEF4520BP 327 5309-1 1334528B 129 532 1334539B 129 MM5387 360NS455 363 5400 1334555B 129 5400 1344558 129 5401 134

4558 130 5402 1344581B 130 5404 1344585B 130 5404 135

4585B 131 5404 13647-92 506 5404 137COP470 320 5404 1384716 131 5405 1384724 131 5406 1384741 131 5407 138479-1464-100 506 5408 1384801 131 5409 138COP484 320 5410 139COP498 320 54107 1394E413-2 506 UTR541OR 5174N22A 506 5412 1394N24 506 54120 1394N49 506 54121 139

4N49 507 54121 140MR501 514 54122 140MM5020 360 54123 140MM5034 360 54128 140MM5051 360 54150 140506 132 54151 140MM5066 360 54153 140507A 132 54153 141508 132 54154 141508/6108 132 5416 141MM5081 360 54161 1415082-2785 507 54174 1415082-4885 507 54175 141TP5088 370 54175 142H1508A-B 328 54182 142RN50H1692 528 5420 142RN50HI692 529 5421 142

RN50H4532 529 5423 142TP5116 370 5425 142LVA51A 512 5427 143P51C56 365 54273 14351C86 132 5430 143IVN5201TNF 512 5437 1435214 132 MM5437 361AD5216 308 5438 144

549

RAC ESD Database



5440 144 54F21 1525442 144 54F240 1525445 144 54F244 1525446 144 54F253 1525450 144 54F280 153MM5450 361 54F32 1535451 144 54F373 1535453 145 54F373 154MM5453 361 54F374 1545454 145 54F521 1545470 145 54F64 1555472 145 54F74 1555473 145 54F74 1565474 146 54H00 1565476 146 54H01 1565483 146 54H04 1565486 146 54H10 156

5486 147 54H10 15754C00 147 54H183 15754C02 147 54H20 15754C04 147 54H30 15754C08 147 54H40 15754C14 147 54H76 15754C157 147 54HC00 15754C163 147 54HC00 15854C164 148 54HC04 15854C174 148 54HC14 15954C193 148 54HC161 15954C30 148 54HC390 15954C42 148 54HC42 15954C52 148 54L03 15954C74 148 54L04 15954C76 148 54L04 16054C83 149 54L04 16154C85 149 54L04 16254C901 149 54L74 16254C902 149 54LS00 16354C906 149 54LS02 16354C922 149 54LS03 16354F00 149 54LS04 164

54F00 150 54LS05 16454F02 150 54LS08 16454F04 150 54LS09 16554F08 150 54LS10 16554F11 150 54LS107 16554F138 151 54LS109 16551F2 "; 151 54LS11 16554F163 151 54LS112 16554F182 152 54LS12 16554F194 152 54LS123 16654F20 152 54LS125 166

550

RAC ESD Database



54LS126 166 54LS299 17654LS138 167 54LS299 17754LS139 167 54LS30 17754LS14 167 54LS32 17754LS148 167 54LS353 17754LS15 167 54LS365 17754LS151 167 54LS365A 177

54LS151 168 54LS367 17854LS153 168 54LS368 17854LS154 169 54LS37 17854LS155 169 54LS373 17854LS157 169 54LS374 17854LS160 169 54LS374 17954LS161 169 54LS38 17954LS161A 170 54LS390 17954LS162 170 54LS393 17954LS163 170 54LS40 17954LS164 170 54LS40 18054LS165 170 54LS42 18054LS166 170 54LS51 180

54LS166 171 54LS54 18054LS173 171 54LS670 18054LS174 171 54LS688 18054LS175 171 54LS697 18054LS175 172 54LS73 181

54LS181 172 54LS74 18154LS192 172 54LS74A 18154LS193 172 54LS75 18154LS194 172 54LS76 18254LS196 173 54LS85 18254LS197 173 54LS86 18254LS20 173 54LS90 18254LS21 173 54LS92 18354LS221 173 54LS93 18354LS240 173 54S00 18354LS244 173 54S02 183

54LS244 174 54S03 18454LS245 174 54S04 18454LS251 174 54S04 18554LS253 174 54S04 186

54LS253 175 54S04 18754LS257 175 54S05 18754LS259 175 54S08 18754LS26 175 54S10 18754LS266 176 54S11 18754LS27 176 54S112 18754LS279 176 54S133 18854LS280 176 54S135 18854LS283 176 54S138 18854LS295 176 54S140 18854LS298 176 54S151 188

551

RAC ESD Database


Part Number Page Part Number Pa

54S153 188 RNC55H68 53054S157 189 LM567 34954S160 189 RBR56L27400 52854S161 189 RBR56L32401 52854S169 189 MRF571 51454S174 189 5710 195

54S174 190 573 19654S175 190 AD574 30854S181 190 MM57408D 36154S182 190 AD581 30854S189 190 5845 19654S20 190 AD584SH 30854S200 190 AD584TH 30954S22 191 MM58538 36154S251 191 MM58539 36154S257 191 MM58540 36154S258 191 MM58548 36254S280 191 AD590 30954S287 191 LM592 34954S288 191 MTP5NO5 514

54S288 192 MF6-50 35954S30 192 IRL60 51254S32 192 ME60 51354S471 192 6116 19654S472 192 IDT6116 32854S51 192 IDT6116 32954S573 192 6116590 19654S64 193 NMC61642 36254S734 193 62-92 50754S74 193 SCX6212QFU/N5 36854S85 193 LM628 34954S86 193 LMC628 352T1551 517 63-92 50755107 193 63983 19655109 193 NE64587 51555113 194 6504 19755114 194 6514 19755326 194 SKA6516 51655327 194 6518 19855454 194 6561 19855461 194 LMC660 35255462 195 6654 19855463 195 LMC668 35255464 195 LMC669 352555 195 6800 198556 195 68000 198AD558T 308 68000 199RNC55H 529 6802 199RNC55HI183FS 529 6821 199RNC55H3322 529 6828 199

RNC55H3322 530 6844 200

552

RAC ESD Database



6845 200 LM741CN 3506850 200 7420 209MC6850 358 7425 209AM687 311 7432 2096875 200 7437 209SM692-1 517 7438 209MTM6N60 514 7440 2107040 200 7445 21)709 200 7446 21070C97 200 747 210710 201 7474 210715 201 747A 210IDL72015ODB 328 LM747A 3517220 201 LM747CN 351723 201 7486 210LM723 349 7490 211

LM723 350 74AC00 21172515 508 74AC109 21172709 201 74AC153 211733 201 74AC153 212

733 202 74AC163 212LM733 350 74AC169 212740 202 74AC191 2127400 202 74AC191 2137402 203 74AC245 2137404 203 74AC251 2137406 203 74AC253 2137407 203 74AC253 214741 203 74AC258 214

741 204 74AC299 214741 205 74AC323 214

7410 205 74AC323 2157411 205 74AC521 21574120 205 74AC540 21574128 205 74AC541 2157413 206 74AC541 21674132 206 74AC646 2167414 206 74AC708 21674151 206 74AC74 21674153 206 74AC74 21774154 206 74ACTOO 21774157 206 74ACT08 21774163 206 74ACT109 217

74163 207 74ACT109 21874164 207 74ACT151 21874173 207 74ACT153 218

74173 208 74ACT157 21874175 208 74ACT157 21974182 208 74ACT158 21974191 209 74ACT175 219LM741A 350 74ACT245 219

553

RAC ESD Database



74ACT245 220 74F164 23274ACT253 220 74F168 23274ACT257 220 74F169 23274ACT258 220 74F174 23274ACT510 220 74F175 232

74ACT510 221 74F175 23374ACT534 221 74F175 23474ACT540 221 74F175 23574ACT563 221 74F175 236

74ACT563 222 74F175 23774ACT564 222 74F175 23874ACT573 222 74F175 23974ACT574 222 74F175 240

74ACT574 223 74F190 24074ACT708 223 74F191 24074ACT74 223 74F192 240DM74ALSOO 323 74F193 240DM74ALS138 324 74F20 241DM74ALS14 324 74F240 241DM74ALS157 324 74F241 241DM74ALS245 324 74F243 241DM74ALS258 324 74F244 241DM74ALS373 324 74F245 241DM74ALS541 324 74F251 241DM74AS174 324 74F253 242DM74AS282 325 74F257 242DM74AS640 325 74F258 24274F00 223 74F283 24274F02 223 74F299 24274F04 224 74F32 242

74F04 225 74F322 24274F04 226 74F323 24274F04 227 74F350 24374F04 228 74F352 24374FO4 229 74F353 24374F04 230 74F373 243

74F08 230 74F374 24374F10 230 74F378 24374F109 230 74F379 24374F11 230 74F398 24374F112 230 74F399 24474F113 231 74F533 24474F138 231 74F534 24474F139 231 74F543 24474F151 231 74F547 24474F153 231 74F548 24474F157 231 74F569 24474F158 231 74F64 24474F160 231 74F74 24574F161 232 74F86 24574F163 232 74H00 245

554

RAC ESD Database



74H05 245 74LS165 25774H106 245 74LS166 258

74H106 246 74LS169 25874HC00 246 74LS173 25874HC04 247 74LS174 258

74HC04 248 74LS175 25874HC161 248 74LS175 259

74HC161 249 74LS181 25974HC195 249 74LS191 259MM74HC4020 362 74LS192 260MM74HC4538 362 74LS193 26074L00 249 74LS194 26074L71 249 74LS195 26074L73 249 74LS196 26074L95 250 74LS197 26174LS00 250 74LS20 261DM74LS00 325 74LS21 26174LS02 250 74LS221 26174LS03 251 74LS240 26174LS04 251 74LS240 26274LS05 251 74LS241 26274LS08 251 74LS244 26274LS09 251 74LS245 263

74LS09 252 74LS251 26374LS10 252 74LS253 26374LS107 252 74LS257 26374LS109 252 74LS259 26474LS11 253 74LS266 26474LS112 253 74LS27 26474LS12 253 74LS279 26474LS123 253 74LS280 26474LS125 253 74LS283 26474LS126 254 74LS295 26474LS132 254 74LS298 26474LS138 254 74LS298 26574LS139 254 74LS299 26574LS14 254 74LS30 26574LS148 254 74LS32 26574LS15 255 74LS323 26574LS151 255 74LS352 26574LS153 255 74LS353 26674LS154 255 74LS365 26674LS155 255 74LS366 26674LS157 255 74LS367 26674LS158 256 74LS368 26674LS160 256 74LS37 26674LS161 256 74LS373 26674LS162 256 74LS373 26774LS163 256 74LS374 267

74LS163 257 74LS379 26774LS164 257 74LS38 267

555

MR-_I

RAC ESD Database



74LS390 267 74S32 276

74LS393 267 74S40 276

74LS395 267 74S472 276

74LS40 268 74S51 276

74LS42 268 74S74 276

74LS51 268 74S85 276

74LS54 268 74S86 276

74LS574 268 74S86 277

74LS670 268 75107 277

74LS74 268 7520 277

74LS74 269 7520 278

74LS75 269 7521 278

74LS86 269 7522 279

74LS92 269 7533 279

74S00 269 75461 279

74S00 270 75462 279

74S02 270 75463 279

74S03 270 75464 279

74S04 270 7552 279

74S04 271 75LS85 280

74S05 271 76161 280

74S08 271 7620 280

74S10 271 76321 280

74S109 271 LMC7660 352

74SI1 271 776 280

74S112 272 FD777F 510

74S133 272 7805 280

74S135 272 7812 281

74S138 272 7815 281

74S139 272 78H05 281

74S140 272 LM78L05 351

74S151 272 78M05 281

74S151 273 78M12 281

74S153 273 78M12 282

74S157 273 78M15 282

74S158 273 7905 282

74S160 273 7912 282

74S161 273 7915 282

74S174 274 7924 282

74S175 274 79M12 282

74S181 274 7SM12 283

74S182 274 79M15 283

74S189 274 CY7C401 321

DM74S195 325 CY7C403 321

74S20 274 7M853S65 283

74S200 275 MF8 359

74S22 275 80186 283

74S251 275 80188 283

74S257 275 80286 284

74S258 275 80287 284

74S30 275 8031 284

556

RAC ESD Database


Part Number Pa_ Pge Part Number Page

8032 284 8257 29480354 508 82586 2948039 284 82588 294

8039 285 82588 295NS8040 363 8259 2958048 285 8259A 295NS8049 363 8272 295INS8050 332 8274 295NS8050 363 8276 2958051 285 8279 2968080 285 8282 2968085 285 8283 296

8085 286 8284 2968086 286 8286 296

8086 287 8287 2968087 287 8288 296MC8087 358 8288 2978088 287 8289 2978089 287 8291 29780C86 287 8293 297810 287 INS82C50 332

810 288 82C52 2978155 288 MD82C55A 358

8155 289 82C59A 2988156 289 82C82 2988185 289 82C84A 2988202 289 82C88 298

8202 290 82S114 2988203 290 82S123 2998206 290 82S129 2998207 290 82S131 2998208 290 82S137 2998212 291 82S141 2998214 291 82S181 2998224 291 82S185 3008228 291 82S191 30082284 291 82S2708 30082288 291 82S34 300

82288 292 82S67 30082289 292 LM833 3518237 292 DP8340 3268238 292 DP8341 3268243 292 LM835 351

8243 293 DP8464BN 32682501 DP8466 3268251 zi3 8481 3018253 293 Z8581-10CMB 3718254 293 85HQ045 508

8254 294 8656 3018255 294 8685 3018256 294 8741 301

557

RAC ESD Database



8742 301 RF9601 3688744 301 9602 305

8744 302 9614 3058748 302 9614 306P8751H 365 9615 3068755 302 9616 306NS87P50 363 PT9701B 51688000 508 9900 30688001 508 9908 306DM8820AJ 325 9909 30788XXX 508 9910 307DS8908 326 9911 307DS8921 326 9912 307899-1-R 522 9930 3078T26 302 9932 3078T26C 302 9944 3078X01 302 9945 307MLED900 513 9945 3089093 303 9946 308RNC90Y178ROO 530 9948 308RNC90Y187ROO 530RNC90Y196ROO 530RNC90Y205ROO 530RNC90Y20ROOOBR 530RNC90Y215ROO 531RNC90Y22600 531RNC90Y226ROOO 531RNC90Y3KO100 5319102 303NS913 363914 303MMCM918 513LVA91A 513COP920 320930 3039309 303DM933N 32593415 30393449 303NMC9346N 362935 3039383 304940 3049428-037 304COP944 32094459 304946 304948 304AM9519A 509RM951DC 3689601 305

558

SECTION 5.0

DATA SOURCES

559

5.0 DATA SOURCES

The following section contains brief descriptions of the various data sources used in this

publication. They are presented in numerical order by source code which is found in field No. 6 inthe detailed data of Section 3.0. Note that there may be a range of source codes associated with

one data source if different test methods were used by that source.

001 Three Fairchild 2102LI ICs were tested using the standard human body model. Thevoltage was applied to each input with the positive voltage on the input and the negativeon VSS or VDD. Pulsing started at 200 volts and incremented in 100-volt steps until

failure occurred. Three pulses were given at each voltage. Out of a total of 39 inputs

tested, 7 were damaged at 300 volts, 22 at 400 volts, 9 at 500 volts and 1 at 600 volts.

002 Type 6514 Static RAMs from RCA and Monolithic Memories were the devices tested.The inputs were step-stressed until failure in both polarities. A positive potential at the

input was found to be the more destructive condition.

003 Devices of various technologies were stressed using a 100 pF and 0 ohm model. Theinputs were step-stressed with one supply lead grounded. The voltage was increased in

100-volt steps until failure.

004 MOS, STTL, and TTL devices were stressed using 125 pF capacitance and 0

resistance. The inputs were stressed with no other pins grounded (i.e., floating device

model). In this situation, it is the capacitance of the device itself which allows energy

to be dissipated causing device damage.

005 A sampling of digital to analog converters from 6 different manufacturers were tested.Step-stress comparative testing was done using the standard human body model. A

change in any electrical parameter of 10% or more was considered a failure. The

following devices were tested:

561

005 (Cont'd)

Analog Devices AD 7533

Micro Power Systems AD 7520Analog Devices AD 7520

Intersil AD 7520

Hybrid Systems DAC 331

Raytheon AD 7521

National AD 7521

006 Various CMOS devices were tested using the standard human body model. A sample

of four devices were step-stressed on a different pin combination for every voltage.

The pin combinations used were:

VDD Input

Input VSS

Input Associated Output

Associated Output Input

The voltage stepping increments were 200 volts starting at 400 volts. An out-of-spec

current leakage was used as the failure criterion.

007-013 Various CMOS devices from two different manufacturers were tested in accordancewith the applicable MIL-M-38510 slash sheet. This requires the device to withstand a

stressing voltage of 40d volts. To obtain comparative data on the devices, a sample of

5 devices were also tested at 200, 400, and 600 volts with each device subjected to only

one voltage.

014-025 (Published paper, Ref. 10)

Various technologies (CMOS, "TTL, STTL, LSTTL, ECL, transistors, diodes) were

tested to determine the relative failure voltages. Each technology was tested using the

human body model with various resistances and capacitances (100 to 10K ohm and 100

to 500 pF, respectively). Specific part numbers are not known.

562

026 These tests were performed with an "in-house"-built VZAP tester utilizing a 200 pFcapacitor and a 100 ohm resistor. Average failure voltages for a sampling of 4 devices

was given using step-stressing.

027 Tests were conducted on various bipolar devices, both digital and linear, using anElectro-tech Systems (ETS)-900 ESD tester (100 pF, 1500 ohm). A sample of 15 of

each device type was tested at 1000 volts. The failure criterion was an out-of-spec DC

parameter.

028 (Publisher paper, Ref. 8)

Various semiconductor devices wcre step-stressed with a circuit similar to the MIL-M-

385 10 slash sheet spec (117 pF, 1500 ohm). Step voltages of 250, 500, 1000, 1500

and 2500 volts were used with 30 pulses applied at each voltage. A DC parameter

change of 10% or more was used as the failure criterion. Devices were also stressed at

75% of the threshold and then burned in to detect possible ESD-induced latent failures.(The 75% pulsing data is not included ;n the detailed data section of this book).

029 (Published report, Ref. 11)

The data in the detailed data section under the 029 source code was theoretically derivedfrom data contained in the SUPERSAP2 database, which contains parametric data on

many electronic devices including diodes, transistors, and microcircuits. Theparameters are derived theoretically and empirically from EMP test data.

030 This document contains worst-case failure voltages for many different microcircuits,

diodes and transistors referenced to the 100 pF, 1500 ohm human body model. Detailsof the test procedure was not known.

563

031-047 This document contains a study to evaluate various NMOS and CMOS devices from

various manufacturers for their ESD susceptibility. Various resistances and

capacitances were used in the discharge circuit. Devices which were step-stressed

(source codes 042-045) were stepped from 400 volts in 100-volt increments. Multiple

pulsing was also carried out. For devices that were step-stressed (source code 045)

four pulses were applied at each voltage. Multiple pulsing was also carried out at

discrete voltages of 1000 volts (source code 046) or 500 volts (source code 047) untilfailure occurred. One input of the devices was stressed to VSS, Vpp or VDD in both

polarities.

048 (Published paper, Ref. 15)

In this paper, several bipolar transistors, diodes, and JFETs were stressed with a 218

pF, 100 ohm discharge model. All devices were step-stressed with the stressing

voltage increasing by 20% with every pulse. The starting voltages for MOS devices

was 16 volts and for all others 70 volts. The maximum stressing voltage was 3000

volts.

049-060 ESD susceptibility testing was conducted on various transistors and ICs. Comparative

data is given on the 741 op amp from three different manufacturers. Two advanced

Schottky parts were also tested (the 74F00 and 74F04). For devices which were step-

stressed the source code and associated step levels are as follows:

051 4000, 10000

052 50, 100, 200, 300, 400, 500, 600

053 500, 1000, 1500

054 1000, 2000

061-066 Tests were carried out on the following NMOS 16K dynamic RAMs:

TI 4116

NEC 416

Mostek 4116Intel (Part number not reported)

564

061-066 (Cont'd)

The source codes and associated voltage step levels for devices which were step-

stressed are as follows:

061 500, 1000

063 200, 400, 600, 800, 1000

Two different resistances were used and multiple pulse testing was conducted.

067-070 This document presents data on an STTL device (74S00) and a TTL device (7437).

The voltages given are those required to cause 30% of the devices to fail. The inputs of

the devices were tested using four different capacitances and no resistance. Findings

indicate, on the average, the energy required to cause failure in the Schottky device is

25% that of the standard TTL device.

071-073 Resistance networks were tested for resistance change after stressing a sample of

devices at either 170, 2000 or 15,000 volts using the standard human body model. A

change in resistance of 2% was used as the failure criterion. Various resistance values

were stressed with up to 10 pulses or until failure.

074-086 RNC 50 type 0.1% resistors in various resistance values were tested for their ESD

susceptibility. Devices were stressed with a 200 pF, 1000 ohm human body model

(except for devices with source code 074 and 083 which used no resistance in the test

circuit). For devices which were step-stressed, the source code and associated

stressing voltages are as follows:

074 50, 100, 200

075 300, 400, 500, 600, 700, 800, 900, 1000

076 1000, 1500, 2000

077 500, 800, 1000, 1200,1500, 2000, 2500

078 500, 1000

079 500, 1000, 1500, 2000

080 500, 1000, 1500

565

074-086 (Cont'd)

081 2000, 3000, 4000, 5000

083 500, 1000, 1500, 2000, 2500, 3000, 3500, 4000

085 100, 200, 325, 400, 500, 1100

086 1000, 1500, 2000, 2500, 3000, 4000, 4500,5000, 6000, 8000, 10000, 15000

A change in resistance of 0.1% was used as the failure criterion.


This report documents an extensive study by Hewlett Packard on the effects of ESD onvarious CMOS devices and investigates the possibility of ESD-induced latent failures.

The data associated with these source codes were obtained primarily from Weibullplots, i.e., the voltages which would cause 10%, 50% and 90% of the devices to fail

are given as cumulative failures. Since the sample size was known (25 for eachdevice), the approximate number failing at each specified voltage can be calculated via

the following formula:

i-.3N + 4 -%failed ( 100)

where

i = number failed

N = sample size

Therefore, at the 10% voltage approximately 3 devices failed, at 50% 10 more devices

failed and at 90% 10 more, with approximately 2 devices passing the test at the 90%

voltage.

Multiple pulsing was also carried out at a single test voltage (indicated by a GN under

test type) on the Motorola 14049. The voltages chosen were 700, 900, 1100, 4500,

6000 and 7000, and the number of pulses were incremented until device failure (source

codes 098-103).

566

127 Three LSTTL devices (74LS09, 74LS175 and 74LS240) from various manufacturers

were tested for their ESD susceptibility. The inputs were step-stressed in 200-volt

increments starting at 400 volts with one pulse at each voltage. The procedure was

repeated with 10 pulses at each voltage on another sampling of devices. It was noted

that 90% of the failures exhibited input diode short circuits.

128 Two low-power Schottky devices (the 54LS 151 from two different manufacturers and

the 54LS153) and one Schottky TTL device (54S157) were tested. All inputs on all

devices were step-stressed to failure with five pulses at each voltage. The voltageincrements were 100 volts starting at 400 volts. The failure voltage specified is an

average of all inputs of that device (with the most susceptible given in the Remarks

section).

129-139 Various MOS microprocessors were tested, the Mostek 3870 and 4116, the NEC

D416C, and the Hitachi 4716AP. For the Mostek 3870, a sample of 5 devices were

tested at 1000 and 2000 volts and 4 devices were tested at 3500V. For the other partstested, a sample of 5 were tested at 500, 700, 800, 1000, and 1500 volts until all 5

parts failed.

140 A sample of 40 MK3873s was tested at 300 volts with up to 3 pulses, and the survivor

(only 1) was tested at 1000 volts.


This extensive study evaluates the input protection on CMOS devices using various

resistances and capacitances on the 4001A (source codes 143-154).

Also, the 4011 from four different manufacturers was step-stressed on twelve different

pin combinations. The failure voltage is given for each manufacturer and each pin

combination.

567


Testing was performed on various CMOS devices, the 4021A, 4021B, 4081B, 4011A

and 4013A. To more closely approximate typical resistances seen by the device under

test in actual circuit operation, the tests were carried out with a resistance (20K to 5M

ohms) to ground. The schematic for the discharge circuit is as follows:

560 fl topin

0 under test

100 pF T |I[

500

The pin under test was connected directly to the 560 ohm resistor. The supply pins

were connected directly to the 50 ohm resistor to ground.

For each pin and polarity of the 402 IA, two devices were stressed at 500, 1000, and

1500 volts (source codes 156-159).

After pulsing, the 4021A devices were put on life test at 150'C for 308 hours.

Subsequent step-stress testing was performed up to 5500 volts (4021A data with

source code 160).

The 4021 B was step-stressed to 4(XX) volts to compare with the 4021 A data.

The 4081B was step-stressed to 45(X volts and the 401 IA and 4013A were stepped to

40(X) volts.

568

165 Several CMOS ICs were subjected to ESD pulses and latch-up tests. The devices were

stressed at 400 volts (in accordance with the MIL-M-38510 slash sheet specification) in

the following sequence:

Input (-) VDD ()

Input (+) VSS (-)

Input (+) Output (-)

Input (-) Output (+)

166-169 A 40-pin LSI PMOS device was subjected to discharges of 4000, 7000 and 10,000

volts using the standard human body model. The device was stressed in the following

four pulse sequence:

Inputs (-) VDD (+)

Inputs (+) VSS (-)

Inputs (+) Outputs (-)

Inputs (-) Outputs (+)

The device had previously passed testing to 3000 volts.


This report documents extensive testing on the 74F04 and the 74F175 advanced

Schottky TTL devices. The testing was done in three basic parts:

(1) Classification testing in accordance with MIL-STD-1686A, Appendix B

(2) Step-stress testing

(3) Multiple pulse testing

All parts of these tests were performed with the standard human body model (100 pF,

1500 ohm) and carried out by three independent test labs.

569

170-230 (Cont'd)

The step-stress testing was carried out in 100-volt increments from 100 to 1000 volts

and 400-volt increments from 1000 to 5000 volts. One device was step-stressed on

one pin (by each test lab) with all other pins tied together (APTT). This test was done

in two conditions: (1) with all pins tied together grounded and (2) with all pins tied

together floating (this condition is noted as such in Remarks).

Multiple pulse testing was also done in the two conditions mentioned above where a

device was stressed at only one voltage by applying numerous pulses until failure. The

devices were checked after 10, 30, 100, and 300 pulses.

231 A custom LSI phone converter IC was tested for its ESD susceptibility. The inputs of

the device were tested by bringing a probe 1.5 feet long up to the pin for discharge. No

resistance was used in the circuit.


This document contains the damage constant (K1) and breakdown voltage VD for many

diodes and transistors. The Wunsch model was used (P = Kt -.5) and the failurevoltage calculated as in source code 029. A bulk resistance of 30 ohm was assumed for

the calculations.

233 (See source codes 156-164)


TTL devices 74H106, 74163, 74LS163, and 74173 were tested for their ESD

susceptibility. The inputs of the devices were step-stressed with various capacitances(and no series resistance). The stepping increments were 100 volts starting at 100volts. The charged capacitor was touched to the input of the device so that an arc

discharge occurred. A curve tracer was used to detect failure.

570

244-245 (Published report, Ref. 20)

This document contains two types of test data: (1) ESD susceptibility using a 100 pF,

1500 ohm model (source code 244), and (2) system transient data using a 0.1 pF, 100

ohm model (source code 245). For the ESD susceptibility data, the devices were step-

stressed to a maximum of 1000 volts. For the system transient data, the devices were

step-stressed to a maximum of 300 volts and the failure voltage given is the average

from 15 devices.


This report documents an extensive program undertaken by Westinghouse to study

ESD-induced latent failures of various types of semiconductor devices. The study was

conducted in two parts: (1) Latent Failure Study I, which studied the 2N4416, 3N170,

1N5711, CD4001A, 5404 and the 54S04, and (2) Latent Failure Study II, which

studied in more detail the 3N 128 and the 54L04. Both studies provided very detailed

ESD susceptibility data on the parts, giving both single pulse and multiple pulse data.

All testing was done with the standard human body model (100 pF, 1500 ohm).


This paper documents a study in which 16K NMOS EPROMs manufactured in both the

United States and Japan were tested for their ESD susceptibility to various discharge

models. Two human body models were used, the 100 pF, 1500 ohm model and a 200

pF, 0 ohm model. For each of the human body models used, a separate device from

each vendor was step-stressed from 200 to 3(X)O volts in twelve steps. 1, 5, and 10

pulses were applied to each pin in both polarities.

Testing was also done on some parts using the charged device model. The devices

tested using this model are noted in the Remarks section. The generic part number of

these devices were not reported.

571


Various ICs of several technologies were tested using a square wave step-stress test(ENMP test) at pulse widths of 100 ns, 1 Its, and 10 pts. From these tests, the damageconstants KI and K2 and the breakdown voltage VD and bulk resistance RB were

calculated. Knowing these parameters, a theoretical ESD failure voltage wascalculated.


Various ICs of several technologies (LSTTL, TTL, STTL, CMOS (B series), CMOSLSI, NMOS) were step-stressed using a 200 pF, 1000 ohm human body model. Steps

were in increments of 100 volts from 100 to 5500 volts until failure. One pulse per pinwas applied at each voltage.


Various LEDs were tested with various pulse widths ranging from a few hundred

nanoseconds to 100 ts. The damage constants were calculated and converted to an

ESD level. A degraded light output was observed to be the most sensitive parameter

and was used as the failure criterion along with a change in the I-V characteristics. This

study was based on work outlined in Ref. 24.

387-388 A resistor network device was tested using 1000 and 10000 volt levels. Three devices

were subjected to each voltage level using a 1000 ohm resistance and 200 pF

capacitance. Five pulses were given per each polarity. An in-house built tester wasused during this go/no go test. The failure criterion was a resistor network out-of-

specification.

572


This version of the QPL added an Electrostatic Discharge Sensitivity Classification in

accordance with MIL-STD-883C, Method 3015.2. Devices that pass the 2000V testing

are given a (B) classification. Devices that did not pass are given an (A) classification.

150() ohms and 100 pF are used for testing.

391 During August, 1986, ESD Susceptibility Testing using an ETS-910 tester, accordance

with the DoD-STD-1686 Human Body test method (15(X) ohm and 100 pF). Of the

commercial high speed CMOS tested using the average failed voltage of 30 devices was

27(X) volts. The testing started at 1800 volt and increasing in 25 volt increments.

392 An in-house test was performed with an IMCS-3000 tester in accordance with MIL-

STD-883 method 3015.2, and using a 1500 ohm 100 pF human body model. The

voltage levels were step stressed at 50, 200, 750, 1000 and 2750 volts. Samples of

integrated circuits and discrete semiconductors from various manufacturers were

stressed. The failure criterion was a 10% or greater change measured on any electrical

parameter.

393 An IMCS-2400B model tester using 1500 ohm resistance and 100 pF capacitance was

used to step stress devices starting at 500 volts, with 500 volt increments to 5000 volts

or failure. A variety of technologies were tested including CMOS, NMOS, ASITTL,

and bipolar transistors from a variety of manufacturers.

394 An IMCS-300() model tester using 15(X) ohm resistance and 100 pF capacitance was

used to step stress devices starting at 1(X) volts, with 100 volt increments to 400() volts

or failure. A group of diodes rrom various manufacturers was tested.

573


A Government Industrial Data Exchange Program (GIDEP) report No. F9-A-86-04

was released August 1986, in which a power rectifier from Unitrode Corporation was

tested using an ETS-910 susceptibility tester. The Human Body (1500 ohm and 100

pF) model was used to step stress in increments of 100, 200, 500, 750, 1000, 2000

and 5000 volt levels.


This data was published in a Rome Air Development Center (RADC), Technical

Report, No. RADC-TR-84-129. Various manufacturers' VMOS Power Field Effect

Transistors were subjected to an ESD susceptibility test using an in-house 1500 ohm

150 pF tester. 6 lots of 5 components each were tested in 100 volt increments starting

at 500 volts until 3 out of 5 devices failed.

397 Military high speed CMOS devices from 4 manufacturers were tested using the MIL-

STD-883 Method 3015, 1500 ohm and 100 pF model. The voltage levels used in the

step stress started at 500 volts, with 500 volt increments to 9000 volts or failure.

Reported failure voltages were based on an average sample size of 10 per pin

combinations.

398 An in-house test was performed using the MIL-STD-883 Method 3015.2, 1500 ohms

resistance and 100 pF capacitance test method. The voltage test was a go/no go 2000

volt test with 5 pulses per polarity. Neither the manufacturer nor model no. of the

tester were reported. Optoelectronic coupler JANTXV 4N24 was tested using 3

samples to determine that it was not susceptible to static discharge.

399 Commercial high speed CMOS devices from various manufacturers were tested,

sample of sizes up to 15 devices were tested using a human body model (1500 ohm

100 pF model), go/no go, 2000 volt 5 pulses per polarity. The failure criteria was an

increase in leakage current.

574

400 An IMCS-2500 model tester using MIL-STD-883C Method 3015.4, 1500 ohm, 100

pF step stress testing started from 100V, in 100 volt increments to failure or 17,500volts. If the device passed, it was then stressed in an in-house-built tester to 43,000

volts or failure. One pulse was applied per voltage increment. The failure criteria was

determined by a change in leakage current.

401 The model number of the IMCS tester was not reported. Testing of the EPROM's wasper MIL-STD-883, Method 3015.4. The resistance was 1500 ohms and capacitance

was 100 pF, voltage step stress levels were of 200 volt increments until failure withfive pulses applied per voltage increments. The components tested were from different

wafers and assembly lots.

402 An IMCS-3000 model tester using MIL-STD-883C Method 3015.4, 1500 ohm, 100

pF model was used for step stressing at 500, 1000, 2000, 4000, 8000 and 16000 volt

increments with five pulses per polarity. All untested pins were tied together.

A variety of diodes, transistors and integrated circuits from various manufacturers were

tested.


An IMCS-2500 model tester using MIL-STD-883 Method 3015.1 with 1500 ohms and

100 pF, step stressed test samples starting at 1000 volts to failure. Five pulses were

applied per polarity per increment. The failure criteria was 10% change in electrical

characteristics. Twenty (20) LED samples of nine (9) die types were tested. Theresults of the test showed that failure mechanisms of the LED's were similar to those of

semiconductor devices: dielectric breakdown, junction punch-thru, and metallizationmelt. The degree of sensitivity depended on the construction of the LED's. Some of

the LED's which showed significant early reverse breakdown voltage, will function

properly in the forward direction.

575

404-411 During a DoD-STD-1686 in-house test, several discrete semiconductors from various

manufacturers were tested using a 1500 ohm resistance and a 100 pF capacitance.

Starting with a go/no go 1000 volt stress, if the component showed degradation after

10 pulses, additional components were then step stressed in 100 volt increments until

failure. Information pertaining to the test apparatus manufacturer or model number was

not supplied.

412 A MIL-STD-883 Method 3015.4 test was performed on transient surge suppressors

using an IMCS-3000 1500 ohm, 100 pF model. The components were step stressed in

1000 volt increments to 15000 volts or failure. One pulse per polarity was applied

during each increment of the step stress. Each pin was tested with respect to pin 1 with

the failure criterion of a 10% change in leakage current.


An IMCS-2400 tester using a MIL-STD-883 Method 3015, 1500 ohm, 100 pF

capacitance model, step stressed at 50, 500, 2000, 6000, and 16000 voltage

increments, five pulses per polarity per increment was applied to three types of

microwave/RF transistors from one manufacturer.

414 CMOS components from four manufacturers were tested using the DoD-STD-1686 test

method. A sample size of ten components each were subjected to a 1500 ohm 100 pF,

100 volt step stress starting at 500V until failure, five pulses per increment. The test

results compared testing with all other pins open vs. all other pins grounded. All pins

grounded showed a slightly lower failure voltage.

415 Several metal film resistors from one manufacturer were tested to DoD-STD-1686

using an in-house built 1500 ohm 100 pF model tester. A step stress was performed

beginning at 500 volts with 100 volt increments up to 1000 volts, then 250 volts

increments to 3000 volts, 500 volt increments up to 6000 volts, and finally 1000 volt

increments to 16000 volts or until failure. The failure criterion was a change in resistor

tolerance of 0.5%.

576

416 An in-house tester was used to test CMOS technology from various manufacturers in

accordance with MIL-STD-883C Method 3015.2. A 1500 ohm, 100 pF model was

used. Step stress voltages starting at 100 volts were increased in increments of 100

volts until failure occurred.

417 The same source as 416 above except the resistance was 0 and the capacitance was 200

pF. A catastrophic failure was the failure criterion.


An in-house tester was used to test op amps. This was done per MIL-STD-883

Method 3015 using a 1500 ohm, 125 pF step stress. 500, 750, 1000, 1250 and 5000

volt one pulse increments, were applied per polarity.


Same source as 418 above except the voltage steps were changed to 1250, 1500, 2000

and 3000 volts. Five pulses were applied per increment per polarity.


Same source as 418 above but resistance was changed to zero ohms, while the

capacitance stayed at 125 pF. The voltage step stress started at 100 volts and increased

in increments of 100 volts until failure.

421-422 Several types of technologies were tested using both the human body model and the

zero ohm model. The HBM testing was in accordance with MIL-STD-883 Method

3015.2 using a 1500 ohm resistance and a 100 pF capacitance, and applying 200 volt

increments to 5000 volts or failure. This test was performed on an ETS-910 tester.

For the zero ohm model; the capacitance was set at 200 pF. The same step stress

voltage increment were applied. Both tests applied one pulse per voltage increment per

polarity.

577


Several VLSI devices were tested using a in-house built tester. This test compared the

human body model (HBM) with charge device model (CDM). The HBM used 1500

ohm resistance and 100 pF capacitance per MIL-STD-883 Method 3015.1. The step

stress voltages were in 250 volt increments until failure with one pulse applied per

polarity per stress increment. The failure criterion was a 10% change in leakage

current.

425 A Hartley Autozap 200 RD model tester using 1500 ohm resistance and 100 pF

capacitance per MIL-STD-883 Method 3015.3 was used. Step stressing started at 100

volts increasing in increments of 100 volts to 1000 volts, then increasing in increments

of 250 volts until failure. Five pulses were applied per increment per polarity. The

testing involved CMOS and NMOS components with the reported failure voltages listed

for each pin tested.

426-427 An IMCS-2400B model tester using 1500 ohm resistance, 100 pF capacitance MIL-

STD-883 Method 3015.3 test method was used to evaluate fast TTL, LSTTL, STTL

and TTL technologies. The step stress voltage increments were 500, 1000, 2000,

4000, 8000 and 16000 volts with five pulses applied per increment per polarity. Thefailure criterion was a change of greater than 5 g. amp in leakage current at 0.5 volts.

The failure mechanisms were listed as input and clamping diode failures.

428 HMOS components were tested with an IMCS-2400 model tester using MIL-STD-883

Method 3015.3 (1500 ohm 100 pF capacitance). A go/no go 1200 volt pulse, 5 pulses

per polarity was applied with all unused pins open.

429 The same as 428 above, but using a in-house standard of zero ohms, 50 pF

capacitance, go/no go 600 volt pulse, 3 pulses per polarity, with all unused pins

grounded.

578

430 The same source as 428. This time using a charge device model 10m ohms resistance,

go/no go 1500 volt pulse, 3 pulses per polarity test with all unused pins open. Thefailure criterion for all tnree tests (428, 429, 430) were listed as a 25% change inleakage current or failed functionally.

431-435, An IMCS-2400 model tester using the MIL-STD-883 Method 3015.1 human body

and 437 model 1500 ohm resistance, 100 pF capacitance with 5 pulses applied per polarity pervoltage increment, was used to test several types of technologies. For PROM devices

the step stress was started at 800 volts increasing in 100 volt increments until failure.For linear comparators and op amps there were two types of tests: (1) was a go/no go

2000 volt and (2) a step from 500 volts increasing in 250 volts increments to failure.For bipolar devices the step stress started at 750 volts and increased in 250 volt

increments until failure. For linear and digital components a go/no go 2000 volt test

was performed.

436 An IMCS 2400 model tester using the DoD-STD-1686 human body model 1500 ohmresistance, 100 pF capacitance was used to step stress devices starting at 200 volts,

increasing in 100 volt increments to 1000 volts, then increasing in 200 volt increments

to 2000 volts, followed by 500 volt increments to 4000 volts or failure. Three pulseswere applied per voltage increment per polarity. Both discrete semiconductors and

integrated circuits from various manufacturers were tested.

438 Bipolar and CMOS device were tested by an IMCS-2400 model tester using MIL-STD-

883 Method 3015.3 human body model with 1500 ohm resistance and 100 pFcapacitance. Go/no go 2000 volts pulses were applied, 5 pulses per polarity. The

failure criterion was out-of-electrical specification.

579

SECTION 6.0

REFERENCES

581

1. MIL-STD-1686A, Electrostatic Discharge Control Program for Protection of Electrical and

Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive

Devices), August 8, 1988.

2. MIL-HDBK-263, Electrostatic Discharge Control Handbook for Protection of Electrical and

Electronic Parts. Assemblies, and Equipment (Excluding Electrically Initiated Explosive

Devices)," May 2, 1980.

3. Analick, R.S., and G.R. Nelson (IBM), "Low Field Time Dependent Dielectric Integrity,"

IEEE - 17th Annual Reliability Physics Proceedings, April 24-26, 1979, pp. 8-12.

4. Branberg, G. (Hewlett-Packard), "L.I.D. Electrostatic Discharge Study," Reports I, II, III

and IV, February 1978, April 1978, May 1978, June 1978, respectively.

5. Crook, D.L. (Intel), "Method of Determining Reliability Screens for Time-Dependent

Dielectric Breakdown," IEEE - 17th Annual Reliability Physics Proceedings, April 25-26,

1979, pp. 1-7.

6. Gallace, L.J., and H.L. Pujol, (RCA/Solid State Division), "The Evaluation of CMOS

Static-Charge Protection Networks and Failure Mechanisms Associated with Overstress

Conditions as Related to Device Life," IEEE - 15th Reliability Physics Symposium, April

1977, pp. 149-157.

7. McCullough, D.T., C.H. Lane, and R.A. Blore, (RADC, Griffiss AFB, NY), "Reliability of

EOS Screened Gold Doped 4002 CMOS Devices," EOS/ESD Symposium Proceedings,

EOS-1, Sept. 1979, pp. 36-40.

8. Schreier, L.A., "Electrostatic Damage Susceptibility of Semiconductor Devices," IEEE - 16th

Annual Reliability Physics Proceedings, April 18-20, 1978, pp. 151-153.

9. Hart, A.R., J. Smyth, and S. Gorski (Hewlett-Packard), "Predicting ESD Related Reliability

Effects," IEEE - 20th Annual Reliability Physics Proceedings, March 30 - April 1, 1982, pp.

233-237.

583

10. Zajac, H. (Tektronix, Inc.), "Study of Effects of Electrostatic Discharge on Solid State

Devices," EOS/ESD Symposium Procedures, EOS-2, Sept. 1980, pp. 58.

11. Cooke, J.L., D.E. Duncan, J.J. Schwarz, and L.H. Skinner (Boeing Aerospace Company

and BDM), "Users Manual for Supersap 2," Rept. No. AFWL-TR-75-70, Contract No.

F29601-74-C-0008, March 1976, 208 pp.

12. Kahn, S.R. (lIT Research Institute), "Effects of EMP Testing on Semiconductor Long Term

Reliability," Rept. No. DNA 4468F, Contract No. DNA 001-76-C-0243, November 1977,

80 pp.

13. McAteer, O.J. (Westinghouse), "Latent ESD Failures," EOS/ESD Symposium Proceedings,

EOS-4, Sept. 1982, pp. 41-48.

14. Dunn, R., and H.Y. Ho (Xerox), "Input Protection Networks on MOS Devices," Rept. No.

CPT-77-681 1, Components and Packaging Tech.,December 15, 1977, 33 pp.

15. Kirk, W.J., L.S. Carter, and M.L. Waddell (Bendix Corp.), "Eliminate Static Damage to

Circuits," Electronic Design, Vol. 27, No. 7, March 29, 1976, pp. 80-85.

16. "Microcircuit Manufacturing and Control Handbook," Integrated Circuit Engineering (ICE).

17. Whelan, C.D. (RCA), "Reliability Evaluation of C/MOS Technology in Complex Integrated

Circuits," Rept. No. RADC-TR-C-0282, March 1976, 210 pp.

18. Schwank, J.R., G.D. Jarell, and M.G. Armendariz (Sandia National Laboratories), "Study

of Electrostatic Discharge Effects on Commercial CMOS Devices," Rept. No. SAND79-

1784, February 1980, 47 pp.

19. Rutherford, D.H. (Raytheon), and J.F. Perkins (Hi-Rel Laboratories, Inc.), "Effects of

Electrical Overstress on Digital Bipolar Microcircuits and Analysis Techniques for Failure

Site Location," EOS/ESD Symposium Proceedings, EOS-1, Sept. 1979, pp. 64-77.

20. Antinone, R.J. (BDM), "Specifications for Microcircuit Electrical Overstress Tolerance, Vol.

I," Rept. No. RADC-TR-78-28, Contract No. F30602-76-C-0308, March 1978, 139 pp.

584

21. Chase, E.W. (Bell Laboratories), "Evaluation of Electrostatic Discharge (ESD) Damage to

16K EPROMS," EOS/ESD Symposium Proceedings, EOS-3, Sept. 22-24, 1981, pp. 236-

241.

22. Young, P.A., R.J. Karaskiewicz (BDM Corp.) and D.R. Alexander (Sandia National

Laboratories), "Electrical Overstress Investigations in Modern Integrated Circuit

Technologies," EOS/ESD Symposium Proceedings, EOS-3, Sept. 22-24, 1981, pp. 114-

119.

23. Formanek, V.C., and I.N. Mindel (lIT Research Institute), "EMP to ESD VZAP Data

Conversion and Considerations," 1979, 30 pp.

24. Kalma, A.H., and C.J. Fischer (SRT Corp.), "Electrical Pulse Burnout Testing of Light

Emitting Diodes," IEEE - Transactions on Nuclear Science, Vol. NS-22, No. 6, December

1975, pp. 2510- 2515.

25. Speakman, T.S. (Western Electric Company), "A Model for the Failure of Bipolar Silicon

Integrated Circuits Subjected to Electrostatic Discharge," IEEE - 12th Reliability Physics

Symposium, 1974, pp. 60-69.

26. Denson, W.K., and K.A. Dey (Reliability Analysis Center), "ESD Susceptibility Testing of

Advanced Schottky TTL," EOS/ESD Symposium Proceedings, September 1982, EOS-4,

pp. 1-12.

27. Branberg, G. (Hewlett-Packard), "Electrostatic Discharge and CMOS Logic," EOS/ESD

Symposium Proceedings, EOS-1, Sept. 1979, pp. 55-63.

28. Wunsch, D.C., and R.R. Bell (BDM), "Determining of Threshold Failure Levels of

Semiconductor Diodes and Transistors Due to Pulse Voltages," IEEE - Transactions on

Nuclear Sciences, NS-15, No. 6, December 1968, pp. 244-258.

29. Unger, B.A., "Electrostatic Discharge (ESD) Failure Mechanisms and Models," presented at

Nepcon West, 1982.

585

30. Bossard, P.R., R.G. Chemelli, and B.A. Unger (Bell Laboratories), "ESD Damage from

Triboelectrically Charged IC Pins," EOS/ESD Symposium Proceedings, EOS-2, Sept. 9-11,

1980, pp. 17-22.

31. Unger, B.A., R. Chemelli, P. Bossard, and M. Hudock, "Evaluation of Integrated Circuit

Shipping Tubes," EOS/ESD Symposium Proceedings, EOS-3, Sept. 22-24, pp. 57-64.

32. Fisch, D.E. (Mostek Corp.) "A New Technique for Input Protection Testing," IEEE - 19th

Annual Reliability Physics Proceedings, April 7-9, 1981, pp. 212-217.

33. Turner, T., and S. Morris (Mostek Corp.), "Electrostatic Sensitivity of Various Input

Protection Networks," EOS/ESD Symposium Proceedings, EOS-2, Sept. 1980, pp. 95-103.

34. Shamp, R.R., and G. DeLoach (Boeing), "Guidelines for Microcircjit Selection and

Qualifications, A Supplement to E-3A EMP Guidelines for Parts Selection and

Qualification."

35. Enders, J. "Susceptibility of ICs in Electrostatic Damage Step-Stress Tests," EOS/ESD

Symposium Proceedings, EQS-3, Sept. 22-24, 1981, pp. 106-113.

36. Morris, W.L. "Microelectronics Failure Analysis Techhiques, A Procedural Guide,"

Reliability Analysis Center Publication MFAT-1, July 1981, Section ilI-Q, pp. 1-61.

37. McAteer, O.J., R.E. Twist, "ESD Failure Analysis Procedures," October 1981, 61 pp.

38. Defense Electronics Supply Center (DESC-EQ) Qualified Products List of Products Qualified

under Military Specification, QPL-38510-56, 28 June 1983.

39. Government Industrial Data Exchange Program (GIDEP) Alert, F9-A-86-04, 28 August

1986.

40. Lutze, D.L. (Martin Marietta Corporation), "Advanced Semiconductor Power Switching

Devices," U.S. Air Force, Rome Air Development Center (RADC), Technical Report,

RADC-TR-84-129, 1984.

586

41. Talbot, J.W. (General Instrument Corporation), "The Effect of ESD on Led III-V Materials,"

EOS/ESD Symposium Proceedings, EOS-8, Sept. 1986, pp. 238-245.

42. Neelakantaswamy, P.S. (RIT Research Corporation), Turkman, R.I. (Rochester Institute of

Technology), "ESD/EOS Susceptibility of Stripline-opposed Emitter Transistor," Evaluation

Engineering, Vol. 26, No. 7, July 1987, pp. 60-68.

43. Head, G.O. (Lear Siegler, Inc.), "Time-Related Improvements of Electrical Characteristics inElectrostatically Damaged Operational Amplifies," EOS/ESD Symposium Proceedings, EOS-

3, Sept. 1981, pp. 225-228.

44. Wilson, D.D., W.E. Echols and M.G. Rossi, (Martin Marietta Denver Aerospace), "EOSProtection for VLSI Devices," U.S. Air Force, Rome Air Development Center (RADC),

Technical Report, RADC-TR-84-183, 1984.

45. King, W.M., "Dynamic Wave Form Characteristics of Personnal Electrostatic Discharge,"EOS/ESD Symposium Proceedings, EOS-1, Sept. 1979, pp. 78-87.

46. DOD-STD-1686 "Electrostatic Discharge Control Program for Protection of Electrical and

Electronic Parts, Assemblies and Equipment (Excluding Electrically Initiated Explosive

Devices), May 2, 1980.

47. MIL-STD-883 "Test Methods and Procedures for Microelectronics."

587

APPENDIX A

DERIVATION OF DATA CONVERSION FORMULAE

589

DERIVATION OF DATA CONVERSION FORMULAE

The derivation of two data conversion methodologies are presented here:

Part I Conversion of failure voltages using a nonstandard human body model to a theoretical

failure voltage consistent with the standard model (100 pF, 1500 ohm).

This is only used for calculating a failure voltage consistent with the 100 pF, 1500 ohm

model so that a classification can be derived in accordance with MIL-STD-1686A and MIL-

HDBK-263.

Part II Conversion of empirical EMP overstress data to a theoretical ESD failure voltage.

Part I: Derivation of Nonstandard Human Body Model Test Data Conversion Formula

Since there is much data on parts using a discharge model other than the standard 100 pF,

1500 ohm, a method to convert the failure voltage to a level consistent with the 100 pF, 1500 ohm

model for classification purposes is necessary. One way this can be accomplished is via a method

similar to the EMP-to-ESD conversion method described in Part II of this appendix. However, for

this method to work, one must know certain parameters of the device, namely the bulk resistance

and breakdown voltage. Unfortunately, these parameters are seldom available, especially given the

fact that for ICs the failure site is often not known.

A more direct conversion technique was therefore needed which could convert data without

knowing these device parameters. Since the failure voltage of a device (the voltage on the

capacitor) is proportional to the series resistance in the stressing circuits and inversely proportional

to the capacitance in the circuit, the failure voltage, resistance, and capacitance can be

approximately related as follows:

V = A

591

Here A is a constant dependent on the device parameters. Therefore, the ratio of failure

voltages for two different RC models is in the general form:

A 1-

C2R

where:

V2 = observed failure voltage using C2 and R2

C2 = capacitance used in nonstandard model (in pF)

R2 = resistance used in nonstandard model (ohms)

V1 = converted failure voltage

C1 = capacitance of model failure voltage is to be converted to (in pF)

R, = resistance of model failure voltage is to be converted to (ohms)

Therefore, when using 100 pF and 1500 ohm for C1 and R1 respectively, the following

conversion equation is obtained:

V 1 = V2 (3.87) R2

The relationship of V, C, and R was obtained through empirical methods (regression

analysis) by reviewing data in which a device was tested with different C, R models and threshold

voltages obtained for each model (Ref. 10, 14, 16, 17, 19, 25).

It must also be stressed that this relationship of V, C and R indicates an energy-dependent

failure mechanism. This may not be an adequate assumption, if the failure mechanisms does not

follow the Wunsch Bell Model (Ref. 28). Since the failure mechanism for a particular device is

rarely known, this data conversion methodology is necessarily very approximate. Adding to this

uncertainty is the fact that the failure mechanism characteristics can change with various RC values.

For this reason this conversion was used to classify devices only in those cases where failure data

from the lOOpF, 1500 ohm model was not available.

592

This method is necessarily approximate and was used in the classification of devices only if

data using the standard human body model was not available.

Part II: Derivation of EMP-to-ESD Conversion Formula

By knowing certain parameters of a device, a theoretical ESD failure voltage can be

calculated. The parameters needed for conversion of EMP overstress failure to a theoretical ESD

failure voltage are (Reference 25):

RB = Bulk resistance of the device

VD = Breakdown voltage of device

K 1 = Failure constant 1

K2 = Failure constant 2

The basic equation used for this conversion is:

PAV = K1 t -K2

where:

PAV = average power required for failure

t = pulse width

p = VD i + RBi 2 (time dependent power)

where i = time dependent current

p = VDIpe t + R B I P 2 e t

where t = RC time constant of discharge

593

Integrating and averaging the power over 5 time constants yields:

5t -t 1 52 -2tAV - f VDIp e , dt+ 1 f e dt

5to 5t o

5 RIp2

(e-5 and e- 10 << 1)

therefore:

VDIp RBIp 2

PAV = 10

-K2 VDIp RBIp 2

K l t 5 + 10

Using the quadratic equation solution to solve for Ip:

-2 VD + 4 VD" - 40 RB (Kt-K2 )

p= 2 RB

V - VD (general equation for Ip)

(V = voltage on capacitor)V =Ip (R + RB) + VD (R = source resistance of model)

Assuming t = St - 5RC - 7.675 x 10-7 for conversion to voltage level consistent with a 100 pF,1500 ohm model and a nominal value of 30 ohms for RB yields:

V=[-2VD2 + 44VD2 + 1200 K1 (7.675 x 10 -7) - K2 ]1530 +VD60

594

APPENDIX B

REPORTING SENSITIVITY DATA

595

TABLE 7: DATA ITEM DESRPTION - 80670Form Approved

DATA ITEM DESCRIPTION OMB No. 0704-01882. TITLE 1. IDENTIFICATION NUMBER

REPORTING RESULTS OF ELECTROSTATIC DISCHARGE DI-RELI-80670SENSITIVITY TESTS OF ELECTRICAL AND ELECTRONIC PARTS

3. DESCRIPTION/PURPOSE

3.1 This report documents the sensitivity of electrical and electronic parts to electronic parts toelectrostatic discharge (ESD) specified by the test of MIL-STD-1686A Appendix A, or MIL-STD-883Test Method 3015.

4. APPROVAL DATA 5. OFFICE OF PRIMARY RESPONSIBILITY (OPR) 6a. DTIC APPL. 6b. GIDEP APPL.

(YYMMDD)

880808 S H

7. APPLICATION/INTERRELATIONSHIP

7.1 This DID contains the format and content preparation instructions for that data generated under the worktask described by 5.2.1.1.(d) of MIL-STD-1686A which requires the identification and classification of electrostaticdischarge (ESD) sensitive parts.7.2 This DID will be used to input ESD sensitivity data into the Reliability Analysis Center (RAC) ESDSensitive Items List (ESDSIL).7.3 This DID applies to all contracts which require ESD testing and classification of electrical and electronic parts.7.4 This DID supersedes DI-T-7132.

8. APPROVAL LIMITATION 9a. APPLICABLE FORMS 9b. AMSC NUMBER

N451710. PREPARATION INSTRUCTIONS

10.1 Content requirements. The report shall include the following data:

a. Complete part numberb. National stock numberc. Manufacturerd. Part description and functione. Date code (as it appears on the part)f. Number testedg. Test date (month and year)h. Test agencyi. Description of test setupj. Number of parts failedk. ESD voltage level at which damage occurred1. Highest ESD voltage passed by all pin combinationsm. Failure criteria

1. Description of criteria used to detect post stress failure

10.2 Rc=nfom . Contractor's format is acceptable fo the above data.

11. DISTRIBUTION STATEMENT

DISTRIBUTION STATEMENT A Approved for public release; distribution unlimited

DD Form 1665, Jun 86 Previous Editions are Obsolete Page 1 of I Pages

597

DEFINITION OF VZAP TEST PARAMETERS

Field Descritiorn

SOURCEName Information pertaining to the company and person responsible for

performing/compiling the results of ESD simulation

Address, Phone Number

TESTERManufacturer Manufacturer of the ESD simulator being used

Model Number Model number and any revision information about the ESD simulatorbeing used

TEST SPEC. METHOD The test method by which ESD simulation was performed

Resistance Resistance used in ESD simulation (in Ohms)

Capacitance Capacitance used in ESD simulation (In Farads)

Voltage Step Levels For step stress testing, the voltage step levels used, for go/no-gotesting, the voltage applied

# of Pulses Per Level For step stress enter the total number of pulses applied at themaximum failed voltage applied

Test Date Date testing was performed

DEVICEPart Number Full device part number, prefix and suffix. In situtations of drawing or

in-house part numbers, the generic number when available

Description Full device description of component

Manufacturer Manufacturer of device being tested

Date Code Date code as found on device

TEST RESULTSPass or Fail Results of the ESD simulation for each device tested

# of Devices Tested Number of devices tested

Failure Voltage The voltage at which the device met failure criterion

Voltage Polarity The polarity of the failed voltage reported

Fail Pin Combination The pin combination for which each test was performed and notewhich combination yielded a failure

Failure Criterion Explanation of what criterion was used to determine a failure

599

P.O. Box 4700, Rome, NY 13440-8200 @ 315/330-4151

TABLE 8: VZAP TEST PARAMETERS

VZAP TEST PARAMETERS

SOURCEName

Address,Phone Number

TESTERManufacturer

Model Number

TEST SPEC. METHODResistance

Capacitance

Voltage Step Levels

# of Pulses Per Level

Test Date

DEVICEPart Number

Description

Manufacturer

Date Code

TEST RESULTSPass or Fail

# of Devices Tested

Failure Voltage

Voltage Polarity

Fail Pin Combination

Failure Criteria

601

The Reliability Analysis Center is a DoD Information Analysis Center operated by lIT Research Institute. Rome, New York

APPENDIX C

ADDITIONAL RAC SERVICES

603

PRODUCT FEE SCHEDULEPrice Per CopyU.S. Non-U.S.

COMPONENT RELIABILITY DATABOOKS

DSR-4 Discrete Semiconductor Device Reliability - 1988 100.00 120.00NPRD-3 Nonelectronic Parts Reliability Data 1985 - (Printed Copy) 80.00 90.00FNPRD-3 Diskette of NPRD-3 Data (IBM PC Compatible) 125.00 135.00VZAP-2 Electrostatic Discharge Susceptibility Data - 1989 125.00 135.00MDR-21 Trend Analysis Databook - 1985 95.00 105.00MDR-21A Field Experience Databook - 1985 125.00 135.00FMDR-21A Diskette of MDR-21A Data (IBM PC Compatible) 175.00 185.00MDR-22 Microcircuit Screening Analysis - 1987 125.00 135.00MDR-22A Microcircuit Screening Data - 1987 75.00 90.00NONOP-1 Nonoperating Reliability Data - 1987 150.00 160.00

EQUIPMENT DATABOOKS

EERD-2 Electronic Equipment Reliability Data - 1986 80.00 95.00EEMD-1 Electronic Equipment Maintainability Data - 1980 60.00 70.00

HANDBOOKS

RDH-376 Reliability Design Handbook 36.00 46.00MFAT-1 Microelectronics Failure Analysis Techniques Procedural Guide 125.00 135.00NPS-1 Analysis Techniques for Mechanical Reliability 56.00 66.00PRIM-1 A Primer for DoD Reliability, Maintainability and Safety Standards 95.00 115.00

PRODUCTS FOR PERSONAL COMPUTERS

RAC-NRPS Nonoperating Reliability Prediction Software 1400.00 1450.00(Price includes NONOP-1 listed above)

STATE- OF- THE-ART REPORTS

SOAR-2 Practical Statistical Analysis for the Reliability Engineer 36.00 46.00SOAR-3 IC Quality Grades: Impact on System Reliability and Life Cycle Cost 46.00 56.00SOAR-4 Confidence Bounds for System Reliability 46.00 56.00SOAR-5 Surface Mount Technology: A Reliability Review 56.00 66.00SOAR-6 ESD Control in the Manufacturing Environment 56.00 66.00

TECHNICAL RELIABILITY STUDIES

TRS-2 Search and Retrieval Index to IRPS Proceedings - 1968 to 1978 24.00 34.00TRS-2A Search and Retrieval Index to IRPS Proceedings - 1979 to 1984 24.00 34.00TRS-3A EOS/ESD Tcchnology Abstracts - 1982 36.00 46.00TRS-A Search and Retrieval Index to EOS/ESD Proceedings - 1979 to 1984 36.00 46.00TRS-5 Search and Retrieval Index to ISTFA Proceedings - 1978 to 1985 36.00 46.00

ADDITIONAL RAC SERVICES

Literature SearchesLiterature Searches are conducted at a flat fee of $50. For best results, please call or write for assistance informulating your search question. An extra charge, based on engineering time and costs, will be made for evaluating,extracting or summarizing information from the cited references.

Consulting Services - Call for Quote!Use order form and send payment, (check or money order), payable to IITRI/RAC.

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ORDER FORM

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Name: U.S. NON-US

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City: MAKE CHECKS PAYABLE TO IITRI/RAC

State: Zp: Return to:Reliability Analysis CenterCountry:

Coutry .. Box 4700'- Rome, NY 13440-8200

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Place orders or obtain additional information directly from the Reliability Analysis Center. Specify the publications and services desired. Except for blanketpurchase orders, prepayment Is required. All Non-U.S. orders must be accompanied by a check drawn on a US bank. Please make checks payable toIITRI/RAC.

Priority Handling - Add $15.00 per book (Non-U.S.) for Air Mail, add $3.00 per book (U.S.) for First Class.

Quantity Discounts - are available, when ordering 10 or more copies. For details call or write Gina Nash at the Reliability Analysis Center, P.O. Box 4700,Rome, NY 13440-8200 (315) 337-0900.

Military Agencies - Blanket Purchase Agreement, DD Form 1155, may be used for ordering RAC reports and/or services. Please indicate maximum dollaramount authorized and cutoff date on your order. Also specify services (i.e, publications, search services, etc.) to be provided. Identify vendor as lITResearch Institute/Reliability Analysis Center.

ORDER FORM

ORDERED BY: (Please Print)0TY. DESCRIPTION UNIT PRICE TOTAL

Name: U.S. NON-US

Compaay_.Division: PRIORITY HANDLING- INSTRUCTIONS BELOW

QUANTITY DISCOUNT - INSTRUCTIONS BELOW

Addess: TOTAL OF ORDER .........

City_. MAKE CHECKS PAYABLE TO IITRI/RAC

State: Zp: Return to:CountryI Reliability Analysis Center

Co~nt.O. Box 4700 - Rome, NY 13440-8200

Phone: Ext:

Place orders or obtain additional information directly from the Reliability Analysis Center. Specify the publications and services desired. Except for blanketpurchase orders, prepayment Is required. All Non-U.S. orders must be accompanied by a check drawn on a US bank. Please make checks payable toIITRI/RAC.

Priority Handling - Add $15.00 per book (Non-U.S.) for Air Mail, add $3.00 per book (U.S.) for First Class.

QuantIty Discounts - are available, when ordering 10 or more copies. For details call or write Gina Nash at the Reliability Analysis Center, P.O. Box 4700,Rome, NY 13440-8200 (315) 337-0900.

Military Agencies - Blanket Purchase Agreement, DO Form 1155, may be used for ordering RAC reports and/or services. Please indicate maximum dollaramount authorized and cutoff date on your order. Also specify services (i.e., publications, search services, etc.) to be provided. Identify vendor as lITResearch Institute/Reiability Analysis Center.

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