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    ECE 315 Spring 2006 Farhan Rana Cornell University

    Lecture 6

    Biased PN Junction Diodes and Current Flow

    In this lecture you will learn:

    Biased PN junction diodes (forward biased and reverse biased PN diodes) Depletion capacitance of PN junction diodes Minority and majority carrier distributions in a biased PN junction diodes Carrier transport and current flow in biased PN junction diodes

    ECE 315 Spring 2006 Farhan Rana Cornell University

    Review: A PN Junction Diode in Thermal Equilibrium

    You have already seen a PN Junction diode in thermal equilibrium:

    P-doped N-doped

    x

    p

    n

    pox nox0 x

    aN dN

    In thermal equilibrium no net current flows in either left or right direction

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    xE

    pox nox0x

    da

    d

    a

    Bspo NN

    NqN

    x 2

    da

    a

    d

    Bsno NN

    NqN

    x 2

    B

    pnB

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    ECE 315 Spring 2006 Farhan Rana Cornell University

    Drift and Diffusion Currents in Thermal Equilibrium

    0 x

    P-doped N-dopedaN dN

    diffpJdiffnJ

    0 x

    P-doped N-dopedaN dN

    pox nox

    driftpJdriftnJ

    pox nox

    In thermal equilibrium:

    The electron diffusion current is balanced by the equal and opposite electron drift current The hole diffusion current is balanced by the equal and opposite hole drift current

    So the net currents of both the electrons as well as the holes are zero!

    In thermal equilibrium:

    0 xJxJxJ diffndriftnn 0 xJxJxJ diffpdriftpp

    ECE 315 Spring 2006 Farhan Rana Cornell University

    Some Thermal Equilibrium Relations

    Total electron current is zero in thermal equilibrium:

    0dx

    xndDqxExnqxJ nnn

    In thermal equilibrium, these two components balance each other exactly at every point in space so that there is no total electron current anywhere

    KTxq

    i

    n

    n

    nn

    nn

    enxndx

    xnddx

    xdKTq

    dxxnd

    dxxd

    D

    dxxndD

    dxxdxn

    dxxndDqxExnq

    log

    log

    0 x

    P-doped N-dopedaN dN

    driftnJ

    diffnJ

    pox nox

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    ECE 315 Spring 2006 Farhan Rana Cornell University

    0dx

    xpdDqxExpqxJ ppp

    In thermal equilibrium, these two components balance each other exactly at every point in space so that there is no total hole current anywhere

    KTxq

    i

    p

    p

    pp

    pp

    enxpdx

    xpddx

    xdKTq

    dxxpd

    dxxd

    D

    dxxpdD

    dxxdxp

    dxxpdDqxExpq

    log

    log

    Some Thermal Equilibrium Relations

    0 x

    P-doped N-dopedaN dN

    driftpJ

    diffpJ

    pox nox

    Total hole current is zero in thermal equilibrium:

    ECE 315 Spring 2006 Farhan Rana Cornell University

    Carrier Concentrations in Thermal Equilibrium

    KTxq

    i enxn

    KTxq

    i enxp

    Another way to write the same equations is:

    KTxxq

    exnxn12

    12

    KTxxq

    expxp12

    12

    In thermal equilibrium, electron and hole concentrations at different points are related exponentially to the potential difference at these points

    1

    2

    1

    2

    q xKTi

    q xKTi

    n x n e

    n x n e

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    ECE 315 Spring 2006 Farhan Rana Cornell University

    A PN Junction Diode in Thermal Equilibrium

    Minority carrier concentrations at the edges of the depletion region:

    P-doped N-doped

    x

    p

    n

    pox nox0 x

    aN dN- +- - -- - - -- - - -

    + + ++ + + ++ + + +

    KTq

    d

    KTq

    no

    KTq

    KTq

    iKTq

    ia

    ipo

    B

    np

    npnp

    eN

    exn

    eenenNnxn

    2

    KTq

    a

    KTq

    po

    KTq

    KTq

    iKTq

    id

    ino

    B

    pn

    pnpn

    eN

    exp

    eenenNnxp

    2

    B

    pox nox

    ECE 315 Spring 2006 Farhan Rana Cornell University

    Voltage Drops in Resistive Networks

    V

    1R 2R 3R

    1V 2V 3V

    VRRR

    RVV

    321

    22

    Most of the voltage drops across the largest resistor in series

    Suppose:12 RR

    32 RR

    Then:

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    ECE 315 Spring 2006 Farhan Rana Cornell University

    A Forward Biased PN Junction Diode Now apply a forward bias with an external voltage source VD:

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    VD > 0+ -

    x

    p

    n

    px

    nx0 x

    In forward bias, the depletion regions shrink, and the electric field in the junction also decreases in magnitude

    xE

    px nx0x

    da

    d

    a

    DBsp NN

    NqN

    Vx 2

    da

    a

    d

    DBsn NN

    NqN

    Vx 2

    B DBV

    All the applied bias is assumed to fall across the depletion region and reduces the built-in potential across it by VD

    pox nox

    ECE 315 Spring 2006 Farhan Rana Cornell University

    A Reversed Biased PN Junction Diode Now apply a bias with an external voltage source VD (where VD < 0):

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -

    x

    p

    n

    px

    nx0 x

    In reverse bias, the depletion regions become larger, and the electric field in the junction also increases in magnitude

    xE

    px nx0x

    da

    d

    a

    DBsp NN

    NqN

    Vx 2

    da

    a

    d

    DBsn NN

    NqN

    Vx 2

    BDB V

    All the applied bias is assumed to fall across the depletion region and increases the built-in potential across it by -VD

    +++

    ---

    VD < 0

    pox nox

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    ECE 315 Spring 2006 Farhan Rana Cornell University

    Junction Depletion Region Capacitance

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -

    A PN junction in equilibrium:

    A PN junction in reverse bias (depletion region widens):

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -

    +++

    ---

    px nx

    pox nox

    P-doped N-dopedaN dN

    +- - -- - -- - -

    + ++ + ++ + +

    + -

    A PN junction in forward bias (depletion region shrinks):

    px nx

    VD = 0

    VD > 0

    VD < 0

    ECE 315 Spring 2006 Farhan Rana Cornell University

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -

    px nx

    P-doped N-dopedaN dN

    +- - -- - -- - -

    + ++ + ++ + +

    + -

    pp xx nn xx

    Area = A

    VD

    VD + VD

    x

    Added charge density jQ

    paj xqNQ

    ndj xqNQ

    Junction Depletion Region Capacitance

  • 7

    ECE 315 Spring 2006 Farhan Rana Cornell University

    Junction Depletion Capacitance:

    np

    s

    D

    nd

    D

    pa

    D

    j

    D

    jj xx

    AdV

    AxqNddV

    AxqNddVdQ

    VQ

    C

    + -

    +++ -

    --

    VD + VD

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -

    px nx

    P-doped N-dopedaN dN

    +- - -- - -- - -

    + ++ + ++ + +

    + -

    pp xx nn xx

    Area = A

    VD

    VD + VD

    Junction Depletion Region Capacitance

    ECE 315 Spring 2006 Farhan Rana Cornell University

    da

    daDBsnp NN

    NNq

    Vxx 2

    Junction Depletion Region Capacitance

    Since:

    da

    da

    DB

    s

    np

    sj NN

    NNV

    qAxx

    AC

    2

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -

    px nx

    VD

    Area

    The depletion region capacitance becomes:

    B

    D

    joV

    C

    1

    Zero voltage junction capacitance

    The depletion capacitance is mostly contributed by the side with the lower doping that has the larger depletion region thickness

  • 8

    ECE 315 Spring 2006 Farhan Rana Cornell University

    Junction Breakdown in Reverse Bias

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -

    px nx

    VD < 0

    In the presence of very large electric fields, the generation rate G of electrons and holes can increase dramatically from the equilibrium value GoIn the presence of large electric fields, electrons and holes accelerate to large velocities and then give off their kinetic energies to create more electrons and holes (impact ionization) which in turn accelerate and create even more electrons and holes leading to an avalanche effect and resulting in very large currents

    The minimum electric field at which breakdown occurs is called the breakdown field

    In Silicon, the breakdown field is around 3x105 V/cm

    PN diodes exhibit breakdown under large reverse biases - when the maximum field in the junction becomes equal to the breakdown field value

    ECE 315 Spring 2006 Farhan Rana Cornell University

    Circuit Symbol for a PN Junction Diode

    VD

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -VD

    + -

  • 9

    ECE 315 Spring 2006 Farhan Rana Cornell University

    Current Flow in a Forward Biased PN Junction Diode

    xE

    px nx0x

    da

    daDBNN

    NNVqE

    2max

    pox nox

    P-doped N-dopedaN dN

    - +- - -- - - -- - - -

    + + ++ + + ++ + + +

    + -

    A PN junction in equilibrium:pox nox

    P-doped N-dopedaN dN

    +- - -- - -- - -

    + ++ + ++ + +

    + -

    A PN junction in forward bias (junction field decreases and depletion region shrinks):

    px