Lecture 6 Biased PN Junction Diodes and Current Flow · PDF fileBiased PN Junction Diodes and...
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Transcript of Lecture 6 Biased PN Junction Diodes and Current Flow · PDF fileBiased PN Junction Diodes and...
1
ECE 315 Spring 2006 Farhan Rana Cornell University
Lecture 6
Biased PN Junction Diodes and Current Flow
In this lecture you will learn:
Biased PN junction diodes (forward biased and reverse biased PN diodes) Depletion capacitance of PN junction diodes Minority and majority carrier distributions in a biased PN junction diodes Carrier transport and current flow in biased PN junction diodes
ECE 315 Spring 2006 Farhan Rana Cornell University
Review: A PN Junction Diode in Thermal Equilibrium
You have already seen a PN Junction diode in thermal equilibrium:
P-doped N-doped
x
p
n
pox nox0 x
aN dN
In thermal equilibrium no net current flows in either left or right direction
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
xE
pox nox0x
da
d
a
Bspo NN
NqN
x 2
da
a
d
Bsno NN
NqN
x 2
B
pnB
2
ECE 315 Spring 2006 Farhan Rana Cornell University
Drift and Diffusion Currents in Thermal Equilibrium
0 x
P-doped N-dopedaN dN
diffpJdiffnJ
0 x
P-doped N-dopedaN dN
pox nox
driftpJdriftnJ
pox nox
In thermal equilibrium:
The electron diffusion current is balanced by the equal and opposite electron drift current The hole diffusion current is balanced by the equal and opposite hole drift current
So the net currents of both the electrons as well as the holes are zero!
In thermal equilibrium:
0 xJxJxJ diffndriftnn 0 xJxJxJ diffpdriftpp
ECE 315 Spring 2006 Farhan Rana Cornell University
Some Thermal Equilibrium Relations
Total electron current is zero in thermal equilibrium:
0dx
xndDqxExnqxJ nnn
In thermal equilibrium, these two components balance each other exactly at every point in space so that there is no total electron current anywhere
KTxq
i
n
n
nn
nn
enxndx
xnddx
xdKTq
dxxnd
dxxd
D
dxxndD
dxxdxn
dxxndDqxExnq
log
log
0 x
P-doped N-dopedaN dN
driftnJ
diffnJ
pox nox
3
ECE 315 Spring 2006 Farhan Rana Cornell University
0dx
xpdDqxExpqxJ ppp
In thermal equilibrium, these two components balance each other exactly at every point in space so that there is no total hole current anywhere
KTxq
i
p
p
pp
pp
enxpdx
xpddx
xdKTq
dxxpd
dxxd
D
dxxpdD
dxxdxp
dxxpdDqxExpq
log
log
Some Thermal Equilibrium Relations
0 x
P-doped N-dopedaN dN
driftpJ
diffpJ
pox nox
Total hole current is zero in thermal equilibrium:
ECE 315 Spring 2006 Farhan Rana Cornell University
Carrier Concentrations in Thermal Equilibrium
KTxq
i enxn
KTxq
i enxp
Another way to write the same equations is:
KTxxq
exnxn12
12
KTxxq
expxp12
12
In thermal equilibrium, electron and hole concentrations at different points are related exponentially to the potential difference at these points
1
2
1
2
q xKTi
q xKTi
n x n e
n x n e
4
ECE 315 Spring 2006 Farhan Rana Cornell University
A PN Junction Diode in Thermal Equilibrium
Minority carrier concentrations at the edges of the depletion region:
P-doped N-doped
x
p
n
pox nox0 x
aN dN- +- - -- - - -- - - -
+ + ++ + + ++ + + +
KTq
d
KTq
no
KTq
KTq
iKTq
ia
ipo
B
np
npnp
eN
exn
eenenNnxn
2
KTq
a
KTq
po
KTq
KTq
iKTq
id
ino
B
pn
pnpn
eN
exp
eenenNnxp
2
B
pox nox
ECE 315 Spring 2006 Farhan Rana Cornell University
Voltage Drops in Resistive Networks
V
1R 2R 3R
1V 2V 3V
VRRR
RVV
321
22
Most of the voltage drops across the largest resistor in series
Suppose:12 RR
32 RR
Then:
5
ECE 315 Spring 2006 Farhan Rana Cornell University
A Forward Biased PN Junction Diode Now apply a forward bias with an external voltage source VD:
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
VD > 0+ -
x
p
n
px
nx0 x
In forward bias, the depletion regions shrink, and the electric field in the junction also decreases in magnitude
xE
px nx0x
da
d
a
DBsp NN
NqN
Vx 2
da
a
d
DBsn NN
NqN
Vx 2
B DBV
All the applied bias is assumed to fall across the depletion region and reduces the built-in potential across it by VD
pox nox
ECE 315 Spring 2006 Farhan Rana Cornell University
A Reversed Biased PN Junction Diode Now apply a bias with an external voltage source VD (where VD < 0):
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -
x
p
n
px
nx0 x
In reverse bias, the depletion regions become larger, and the electric field in the junction also increases in magnitude
xE
px nx0x
da
d
a
DBsp NN
NqN
Vx 2
da
a
d
DBsn NN
NqN
Vx 2
BDB V
All the applied bias is assumed to fall across the depletion region and increases the built-in potential across it by -VD
+++
---
VD < 0
pox nox
6
ECE 315 Spring 2006 Farhan Rana Cornell University
Junction Depletion Region Capacitance
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -
A PN junction in equilibrium:
A PN junction in reverse bias (depletion region widens):
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -
+++
---
px nx
pox nox
P-doped N-dopedaN dN
+- - -- - -- - -
+ ++ + ++ + +
+ -
A PN junction in forward bias (depletion region shrinks):
px nx
VD = 0
VD > 0
VD < 0
ECE 315 Spring 2006 Farhan Rana Cornell University
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -
px nx
P-doped N-dopedaN dN
+- - -- - -- - -
+ ++ + ++ + +
+ -
pp xx nn xx
Area = A
VD
VD + VD
x
Added charge density jQ
paj xqNQ
ndj xqNQ
Junction Depletion Region Capacitance
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ECE 315 Spring 2006 Farhan Rana Cornell University
Junction Depletion Capacitance:
np
s
D
nd
D
pa
D
j
D
jj xx
AdV
AxqNddV
AxqNddVdQ
VQ
C
+ -
+++ -
--
VD + VD
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -
px nx
P-doped N-dopedaN dN
+- - -- - -- - -
+ ++ + ++ + +
+ -
pp xx nn xx
Area = A
VD
VD + VD
Junction Depletion Region Capacitance
ECE 315 Spring 2006 Farhan Rana Cornell University
da
daDBsnp NN
NNq
Vxx 2
Junction Depletion Region Capacitance
Since:
da
da
DB
s
np
sj NN
NNV
qAxx
AC
2
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -
px nx
VD
Area
The depletion region capacitance becomes:
B
D
joV
C
1
Zero voltage junction capacitance
The depletion capacitance is mostly contributed by the side with the lower doping that has the larger depletion region thickness
8
ECE 315 Spring 2006 Farhan Rana Cornell University
Junction Breakdown in Reverse Bias
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -
px nx
VD < 0
In the presence of very large electric fields, the generation rate G of electrons and holes can increase dramatically from the equilibrium value GoIn the presence of large electric fields, electrons and holes accelerate to large velocities and then give off their kinetic energies to create more electrons and holes (impact ionization) which in turn accelerate and create even more electrons and holes leading to an avalanche effect and resulting in very large currents
The minimum electric field at which breakdown occurs is called the breakdown field
In Silicon, the breakdown field is around 3x105 V/cm
PN diodes exhibit breakdown under large reverse biases - when the maximum field in the junction becomes equal to the breakdown field value
ECE 315 Spring 2006 Farhan Rana Cornell University
Circuit Symbol for a PN Junction Diode
VD
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -VD
+ -
9
ECE 315 Spring 2006 Farhan Rana Cornell University
Current Flow in a Forward Biased PN Junction Diode
xE
px nx0x
da
daDBNN
NNVqE
2max
pox nox
P-doped N-dopedaN dN
- +- - -- - - -- - - -
+ + ++ + + ++ + + +
+ -
A PN junction in equilibrium:pox nox
P-doped N-dopedaN dN
+- - -- - -- - -
+ ++ + ++ + +
+ -
A PN junction in forward bias (junction field decreases and depletion region shrinks):
px