Is Now Part of - Fairchild · PDF fileIs Now Part of ON Semiconductor and ... This application...

To learn more about ON Semiconductor, please visit our website at www.onsemi.com

Is Now Part of

ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

www.fairchildsemi.com

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 • 4/13/11

AN-9737 Design Guideline for Single-Stage Flyback AC-DC

Converter Using FL6961 for LED Lighting

Summary

This application note presents single-stage Power Factor

Correction (PFC) and focuses on how to select and design

the flyback transformer for 16.8W (24V/0.7A) solution for

universal input for LED lighting applications using FL6961.

The flyback converter using FL6961 operates in Critical

Conduction Mode (CRM) and has functions such as CC/CV

feedback circuit, soft-starting, and the cycle-by-cycle current

limit for LED lighting applications.

Introduction

These days, engineers use various types of LEDs for general

lighting systems because of their long life, excellent

efficacy, price, environmental benefits, and requirements

from end users. At the same time, high power factor (PF),

isolation for safety, and constant current control (CC) for

constant LED color are becoming requirements.

Conventional regulation is the minimum power factor

correction for input power base above 25W, but many want

to reduce power ratings and the new Energy-Star directive

for solid-state lighting requires a power factor greater than

0.9 for commercial applications. Expect PF regulations to

become more stringent.

Basic Operation: High Power Factor

Flyback Converter

The basic idea of achieving high power factor (PF) flyback

converter is to use a Critical Conduction Mode (CRM) PFC

controller. The conventional PFC IC, such as FL6961, has

constant on-time and variable off-time control method,

which means the input average current always follows the

input voltage shape.

Figure 1 shows the typical application schematic of single-

stage PFC topology. The main difference of normal CRM

boost converter is that single-stage PFC doesn’t use a large

electrolytic capacitor after the full rectification diode.

Normally, the single-stage PFC method uses a small

capacitor (C1 in Figure 1) to act as a noise filter to attenuate

high-frequency components and doesn’t use the INV pin for

output voltage regulation.

Figure 1. Simplified Schematic of High-Power Factor Flyback Converter with FLS6961

Fuse

BR

D2

C4 R8

D1

D3

C5

FL

69

61

1

2

3

4

8

7

6

5

C1

C2

R8

R7

R6Q1

T1

INV

COMP

MOT

CS ZCD

GND

OUT

VCC

U101

EMI filter

R1

R2

R3

R4C3

R5

Feedback

AN-9737 APPLICATION NOTE

© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 • 4/13/11 2

Figure 2 shows typical waveforms of the simplified circuit

of a flyback converter with CRM. When the MOSFET (Q1)

turns on, the primary current in primary side linearly

increases and is clamped at a certain internal level because

the FL6961 doesn’t have cycle-by-cycle current limit like a

conventional current mode control IC (such as FAN7527B).

Its peak level is determined by the primary magnetizing

inductance value and the fixed on-time. Instead of the cycle-

by-cycle primary current limit, the FL6961 has an over-

current protection (OCP) function. If the current sensing

signal is larger than internal detection level, the FL6961

doesn’t get output signal for operating the MOSFET (Q1).

Figure 2. Key Waveforms of Flyback Converter on

CRM

The FL6961 has a constant on-time across the whole range.

The input average current always follows the peak input

current, as shown in the equation:

ONPKMOSFETAVG tII2

1)( = (1)

This is also proportional to the instantaneous input voltage.

This means the input current shape is always the same as the

input voltage shape. The reverse diode voltage is linearly

increased and is equal to:

P

SINODIODEPK

N

NVVV +=)(

(2)

During the MOSFET off-time, which is also the diode on-

time; the input current instantly drops to zero, the diode in

the secondary side conducts, and the diode current linearly

decreases. The peak current of the secondary side is the

same as the multiplication of the primary peak current and

turns ratio between the primary side (NP) and secondary side

(NS) and naturally decreases to zero. The average current of

the secondary side is:

offPK

S

PDIODEAVG tI

N

NI

2

1)( = (3)

Since the diode forward-voltage drop decreases as current

decreases, the output voltage reflects the primary winding

and adds additional voltage due to overshoot made by

resonance between the leakage inductance on primary-side

winding and parasitic capacitance on the MOSFET (Q1). As

a result, a superimposed voltage occurs on the MOSFET

during off-time as:

OSRINoffMOSFET VVVV ++=)( (4)

where VR is the reflected voltage and VOS is the voltage

overshoot term.

The reflected voltage, VR, is affected by the turns ratio

between the primary and secondary side of the transformer

and the output voltage, calculated as:

O

S

P

R VN

NV = (5)

Figure 3 shows the ideal waveforms of the primary-side

current at MOSFET (Q1) and the secondary-side current at

the diode. The input peak and average current on the

primary side follows input voltage instantaneously.

Normally, secondary-side current on the diode is larger than

the primary side because of the turns ratio.

Figure 3. Ideal Waveforms

time

time

time

IPK ( MOSFET )

IDS (MOSFET Drain-to-Source Current) )

ID (Diode Current)

VDS ( MOSFET Voltage)

tON tOFF

tS

IAVG (MOSFET )

IPK ( DIODE )

IAVG (DIODE )

VIN

VR

VOS



As a result, designers should consider two conditions before

component selection: voltage and current capacity on

primary-side MOSFET(Q1) and secondary-side diode (D3)

to make a stable system with margin.

Figure 4 shows a guide to deciding two components on the

boundary condition of flyback converter topology.

Figure 4. Boundary Conditions of Flyback Converter

Topology (Refer to AN-8025)

Design Example

A. Transformer Design

A design guideline of 16.8W single-stage flyback AC-DC

converter using FL6961 is presented. The applied system

parameters are shown in Table 1.

Table 1. System Parameters

Parameter Value

Main Input Voltage Range, VAC(main) 90V~265V

Output Voltage, VOUT 24V

Output Current, IOUT 0.7A

Minimum Switching Frequency at VAC(min)_pk 50kHz

Diode Voltage Drop, Vd 1V

MOSFET On Resistance, RMOS 1Ω

Window Utilization 0.4

Target System Efficiency 0.82

Maximum Duty at Vac(min)_pk 0.35

Operating Maximum Flux Density 0.35

Regulation, α 0.5%

Note: 1. Regulation is strongly related with the copper loss and

0.5% regulation means 0.084W loss on transformer.

There are many ways to decide core and coil size and turns,

such as using AL value and following common practices. In

this note, use the Kg value related with the core geometry to

find optimum core and coil information.

Step 1. Calculate the total period, T:

201==

fT [µs]

Step 2. Calculate the maximum on-time at MOSFET in

primary side.

7)35.0)(1020( 6

max =×== −TDton [µs]

Step 3. Calculate the output power:

5.17)124(7.0)( =+=+= doo VVIP [W]

Step 4. Calculate the maximum input current, Imax:

168.0)82.0)(902(

5.17

min

(max) =×

==ηV

PI o

in [A]

Step 5. Calculate the MOSFET voltage drop, Vvd:

168.0(max) == MOSinvd RIV [V]

Step 6. Calculate the primary voltage on transformer, Vp:

127168.0127min ≈−=−= vdP VVV [V]

Vp=126.83 use 127

Step 7. Calculate the primary peak current, Ippk:

96.0)107)(127(82.0

)5.17)(1020(226

6

(max)

=×

×==

−

−

onp

ppktV

TPI

η [A]

Step 8. Calculate the primary rms current, Iprms:

32.0)1020(3

)107(96.0

3 6

6

=×

×==

−

−

T

tII on

ppkprms [A]

Step 9. Calculate the required minimum inductance, L:

926.096.0

)107(127 6(max) =

×==

−

ppk

onp

I

tVL [mH]

L=0.926[mH] use 1[mH]

Step 10. Calculate the energy-handing capability in watt-

seconds, w-s:

0004608.02

)96.0)(101(

2

232

=×

==−

ppkLIENG [w-s]

Step11. Calculate the electrical conditions, Ke:

00003108.010)35.0)(5.17(145.010145.0 4242 =×=×= −−me PBK

Step 12. Calculate the core geometry, Kg:



0136.0)5.0(00003108.0

)0004608.0()( 22

===αe

gK

ENGK [cm

5]

Step 13. See Table 2 for core size.

To prevent core saturation, select a little big core after

comparing two Kg values: calculate value at Step 12 vs. the

existing value in Table 2.

The PQ-42016 has a little bit big Kg value (0.01327) in

Table 2 with 2500 permeability (µi).

Step 14. Calculate the current density, J.:

265)4.0)(2484.0(35.0

10)0004608.0(210)(2 44

=×

=×

=uPm KAB

ENGJ

[A/cm2]

Step 15. Calculate the required wire area. AW(B):

001207.0265

32.0)( ===

J

IA rms

BW[cm

2]

Step 16. Calculate the number of turns, N:

93.141001207.0

4.04283.0

)(

=×

==Bw

ua

A

KWN

[T]

N=141.93; use 142 turns.

Step 17. Calculate the required gap, lg:

0489.035.0

10)96.0)(142(4.010))((4.0 44

=×

=∆

×∆=

−− ππ

m

gB

INl [cm]

Step 18. Calculate the new turns using a gap from Step 15.

153.83)58.0(4.0

)10)(2500

74.30489.0(101

)(4.0

)( 83

=+×

=

+

=

−

ππµ

c

i

g

A

MPLlL

N [T]

N=83.153; use 83[T].

where µi is permeability of selected core material and

MPL is Magnetic Path Length of selected core.

Step 19. Calculate the fringing flux, F:

238.1)0489.0

)001.1(2ln

58.0

0489.01()

2ln1( =+=+=

gc

g

l

G

A

lF

where G is window height of selected core.

Step 20. Calculate the new turns, Nnew:

6.73)238.1)(58.0)(4.0(

1010489.0

)10())(4.0(

5

8=

××==

− ππ FA

LlN

c

g [T]

Nnew=73.6; use 74.

Step 21. Calculate the AC flux density in Tesla, BAC:

113.00489.0

)10)(238.1)(2

96.0)(74)(4.0()10()

2()4.0(

44

===

−− ππ

g

PK

acl

FI

N

B[T]

Step 22. Calculate the new wire size, AW(B) :

002315.074

4.04283.0)( =

×==

new

ua

BWN

KWA [A/cm

2]

Step 23. Calculate the skin depth at expected operating

frequency at low input voltage. The skin depth is the radius

of the wire.

02960.01050

62.662.6

3=

×==

fγ [cm]

Step 24.Calculate the required wire area under considering

skin depth :

0027535.0)( 2 == rWireA π [cm2]

Step 25. Select a wire size with the required area from Table

4. If the area is not within 10% of the required area, then go

to the next smallest size.

AWG=#23

AW(B)=0.00259[cm2]

µΩ/cm=666

Step 26. Calculate the required number of primary strands,

Snp:

8938.000259.0

002315.0)( ===A

Bw

npWire

AS

This means that the selected wire from the Step 25, AWG23,

is enough or has enough margins for supplying the primary-

side current on the flyback converter.

Step 27. Calculate the secondary and auxiliary turns, Ns

Naux:

05.27)35.0)(902(

)35.01)(124(74

)(

)1)((

max

max =×

−+=

−+=

DV

DVVNN

p

dop

s

Ns=27.05; use 27.

31.17)35.0)(902(

)35.01)(115(74

)(

)1)((

max

max =×

−+=

−+=

DV

DVVNN

p

dop

aux

Naux=17.31; use 17.

Step 28. Calculate the secondary peak current, Ispk:

153.235.01

)7.0(2

)1(

2

max

=−

=−

=D

II o

spk[A]

Step 29. Calculate the secondary rms current, Isrms:

0021.13

)35.01(153.2

3

)1( max =−

=−

=D

II spksrms[A]

Step 30. Calculate the secondary wire area, Asw(B):

003781.0265

0021.1)( ===

J

IA rms

BSW [cm

2]

Step 31. Select a wire size with the required area from Table

4. If the area is not within 10% of the required area, go to

the next smallest size.



AWG=#22

AW(B) =0.003243[cm2]

µΩ/cm=531.4

Step 32. Calculate the required number of primary strands,

Snp:

2521.100259.0

003243.0)( ===A

Bsw

npWire

AS

This requires the AWG21 wire with two strands for

secondary-side winding on the flyback converter.

Adapted Core Size PQ-42614 AWG

Turns

Primary 74 23

Secondary 27 22/ 2 Strands

Auxiliary 17

Estimated gap[mm] 0.489

B. MOSFET and Diode Selection

Step 33. Calculate the maximum voltage of MOSFET drain

voltage at primary side:

54.490)( =++=++= OSO

S

PINOSRINoffMOSFET VV

N

NVVVVV [V]

where VOS is assumed ~50V and its peak can degrade

external snubber circuit performance. This means a 600V

MOSFET can be used with some margin. Minimum

requirements of the MOSFET are summarized below.

Current Rating [A] Voltage Rating [V]

Calculation +20% Margin Calculation +20% Margin

0.96 1.152 490.54 588.65

Step 34. Calculate the maximum voltage of diode at

secondary side:

74.16074

27226524)( =+=+=

P

SINODIODEPK

N

NVVV [V]

This means a 200V diode can be used with some margin.

The minimum requirement of the secondary diode as

summarized below.

Current rating [A] Voltage rating [V]

Calculation +20% Margin Calculation +20% Margin

2.153 2.584 160.74 192.88

C. Sensing Resistor

The CS pin of FL6961 has over-current protection (OCP)

over the whole operating period and its internal clamping

level, VLIMIT, is 0.8V.

Figure 5. Switching Current Limit

Normally, it is reasonable to set the OCP level to 1.5 times

higher than the peak current at primary side.

44.13

5.1(max)

===onp

PPKLIMITtV

TPII

η

Calculate the sensing resistor as:

55.08.0

sin =≤LIMIT

gsenI

R [Ω ]

D. Voltage and Current Feedback for CC/CV

Function

The constant voltage and current output is adapted by

measuring the actual output voltage and current with

external passive components and an op amp in the

evaluation board. Because the output loads, the High

Bright LED (HB LED) and passive components are

effected by ambient temperature. Use the feedback path

for stable operation.

Figure 6. Feedback Circuit for CC/CV Operation



Normally, the CC block is dominate over the CV block in

steady state and the CV block acts as the Over-Voltage

Protection (OVP) at transient or abnormal mode, such as no-

load condition.

The output signal of CC block is determined as:

∫ −+−= dtR

V

R

V

CR

V

R

VRV

refCCgsenrefCCgsen

ccO )(1

)(32

_sin

132

_sin

4_

where the Vsensing_CC means the sensing voltage from the

sensing resistor (R1) and its values is as:

1_sin RIV oCCgsen ×=

The output signal of CV block is determined as:

dtVVRR

R

RCVV

RR

R

R

RV

RR

RV

refCVgsenrefCVgsen

CVgsenCVO

)(11

]

)[()(

_sin

65

6

72

_sin

65

6

7

8_sin

65

6_

−+

+−

++

+=

∫where the Vsensing_CV means the output voltage on this

circuit and this voltage is divided by two resistors, R5 and

R6, and connected to non-inverted pin at the op amp.

Normally, set this divided voltage,CVgsenV

RR

R_sin

65

6 )(+

, to

refV or a little bit smaller value in steady state condition

because the main role of this block is over-voltage

protection. There are more high-voltage transfers to the

output stage at transient or an abnormal case such as over-

voltage output condition than in the steady state.

E. Soft-Start / Overshoot Prevention Function

Normally, the High Bright (HB) LED has a forward-current

limitation to prevent the LED burn-out due to over-power

dissipation. Thererfore, the output overshoot function is

needed through the whole operating period. Though there

are CC/CV blocks for output regulation, those blocks do not

operate in transient modes, because they block have a long

response time and cannot act instantly. Figure 7 shows the

output voltage overshoot compression method using diode

and resistor. The current flows through resistor, R9, and

diode, D204, at startup, which is the period before activating

the CC/CV block, and then decrease at steady state. The

quantity of by-passing current goes into the feedback block

on the control IC, FL6961, and controls the output power

gradually.

Figure 7. Soft-Start / Overshoot Prevention Method



Table 2. Various Core Types and Size

Part # MLT

[cm]

MPL

[cm] G[cm] AC [cm]

Wa

[cm2]

Ap

[cm4]

Kg

[cm5]

Perm AL Manufacturer

RM-42316 4.17 3.80 1.074 0.640 0.454 0.2900 0.017820 2500 2200 Magnetics

PQ-42610 5.54 2.94 0.239 1.05 0.1177 0.1235 0.00937 2500 6310 Magnetics

PQ-42614 5.54 3.33 0.671 0.709 0.3304 0.2343 0.01200 2500 4585 Magnetics

PQ-42016 4.34 3.74 1.001 0.580 0.4283 0.2484 0.01327 2500 2930 Magnetics

EPC-25 4.930 5.92 1.800 0.4640 0.8235 0.3810 0.01438 2300 1560 Magnetics

EI-44008 7.77 5.19 0.356 0.9950 0.3613 0.3595 0.018416 2500 4103 Magnetics

EFD-25 4.78 5.69 1.86 0.5810 0.6789 0.3944 0.01917 1800 1800 Philips

Table 3. PQ-42016 Core Dimensions

(Magnetics: http://www.mag-inc.com/home/Advanced-Search-Results?pn=42016

Table 4. Wire Table

AWG Bare Wire Area

µΩ/cm Heavy Insulation

Cm2 CIR-MIL Cm2 Turns/cm Turns/cm2

20 0.005188 1024.0 332.3 0.006065 11.37 98.93

21 0.004116 812.30 418.9 0.004837 12.75 124.0

22 0.003243 640.10 531.4 0.003857 14.25 155.5

23 0.002588 510.80 666.0 0.003135 15.82 191.3

24 0.002047 404.0 842.1 0.002514 17.63 238.6

25 0.001623 320.40 1062.0 0.002002 19.8 299.7

26 0.001280 252.80 1345.0 0.001603 22.12 374.2

27 0.001021 201.60 1687.6 0.001313 24.44 456.9

28 0.008048 158.80 2142.7 0.0010515 27.32 570.6

29 0.0006470 127.70 2664.3 0.0008548 30.27 701.9



Schematic

FL6961

Figure 8. Schematic



Bill Of Materials

Item

Number

Part

Reference Value Quantity Description (Manufacturer)

1 U101 FL6961 1 CRM PFC Controller (Fairchild Semiconductor)

2 U102 FOD817 1 Opto-Coupler (Fairchild Semiconductor)

3 U201 KA431 1 Shunt Regulator (Fairchild Semiconductor)

4 U202 KA358A(LM2904) 1 Dual Op Amp (Fairchild Semiconductor)

5 Q101 FQPF3N80C 1 800V/3A MOSFET (Fairchild Semiconductor)

6 D101 DF04 1 1.5A SMD Bridge-Diode (Fairchild Semiconductor)

7 D102 RS1M 1 1000V/1A Ultra-Fast Recovery Diode (Fairchild Semiconductor)

8 D103 RS1G 1 400V/1A Fast Recovery Diode (Fairchild Semiconductor)

9 D201,D204 EGP30D 2 200V/3A Ultra-Fast Recovery Diode (Fairchild Semiconductor)

10 D202,D203, D205,D206

LL4148 3 General-Purpose Diode (Fairchild Semiconductor)

11 R101,R102,

R103 82KΩ 3 SMD Resistor1206

12 R104 120kΩ 1 SMD Resistor1206

13 R105 10KΩ 1 SMD Resistor1206

14 R106 20KΩ 1 SMD Resistor1206

15 R107 9.1kΩ 1 SMD Resistor1206

16 R108 47Ω 1 SMD Resistor 1206

17 R109 10Ω 1 SMD Resistor 1206

18 R110 220KΩ 1 2W

19 R111 30KΩ 1 SMD Resistor 1206

20 R112,R113 1Ω 2 SMD Resistor 1206

21 R201,R202,

R203 1Ω 3 SMD Resistor 1206

22 R204 2.2Ω 1 SMD Resistor 0806

23 R205 4.3KΩ 1 SMD Resistor 0806












Bill Of Materials (Continued)

Item Number Part Reference Value Quantity Description (Manufacturer)

33 C101 100nF/250V 1 X – Capacitor

34 C102 47nF/250V 1 X – Capacitor

35 C103 100nF/630V 1 Film Capacitor

36 C104 33µF/35V 1 Electrolytic Capacitor

37 C105 2.2nF/1kV 1 Y-Capacitor

38 C106 2.2µF 1 SMD Capacitor 0805

39 C107 30pF 1 SMD Capacitor 0805

40 C108 100nF 1 SMD Capacitor 0805

41 C201,C202 470µF/35V 2 Electrolytic capacitor

42 C203 1µF 1 SMD Capacitor 0805

43 C204 470nF 1 SMD Capacitor 0805

44 C205 10µF/35V 1 Electrolytic Capacitor

45 LF101,LF102 80mH 2 Line Filter

46 L101 27µH 1 Line Filter

47 L102 6.8µH 1 Line Filter

48 L201 5µH 1 Output Inductor

49 F101 1A/250V 1 Fuse

50 T1 PQ-42016 1 1mH



Related Datasheets

FL6961 — Single-Stage Flyback and Boundary Mode PFC Controller for Lighting

AN-8025 — Design Guideline of Single-Stage Flyback AC-DC Converter Using FAN7530 for LED Lighting

DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which,

(a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.

2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

http://www.fairchildsemi.com/ds/FL/FL6961.pdf.

http://www.fairchildsemi.com/an/AN/AN-8025.pdf#page=1

www.onsemi.com1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patentcoverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liabilityarising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customerapplication by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are notdesigned, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classificationin a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorizedapplication, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, andexpenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if suchclaim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. Thisliterature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATIONN. American Technical Support: 800−282−9855 Toll FreeUSA/Canada

Europe, Middle East and Africa Technical Support:Phone: 421 33 790 2910

Japan Customer Focus CenterPhone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:Literature Distribution Center for ON Semiconductor19521 E. 32nd Pkwy, Aurora, Colorado 80011 USAPhone: 303−675−2175 or 800−344−3860 Toll Free USA/CanadaFax: 303−675−2176 or 800−344−3867 Toll Free USA/CanadaEmail: [email protected]

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your localSales Representative

© Semiconductor Components Industries, LLC

http://www.onsemi.com/

www.onsemi.com/site/pdf/Patent-Marking.pdf

Is Now Part of - Fairchild · PDF fileIs Now Part of ON Semiconductor and ... This application...

Documents

Transcript of Is Now Part of - Fairchild · PDF fileIs Now Part of ON Semiconductor and ... This application...