Irfb4310 Mosfet
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01/31/06 Benefits Improved Gate, Avalanch e and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free www.irf.com 1 D 2 Pak IRFS4310PbF TO-220AB IRFB4310PbF TO-262 IRFSL4310PbF IRFB4310PbF IRFS4310PbF IRFSL4310PbF HEXFET Power MOSFET Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits S D G S D G S D G S D G V DSS 100V R DS on typ. 5.6m max. 7.0m I D 130A Absolute Maximum Ratings Symbol Parameter Units I D @ T C = 25°C Continuous Drain Current, V GS @ 10V A I D @ T C = 100°C Continuous Drain Current, V GS @ 10V I DM Pulsed Drain Current P D @T C = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C V GS Gate-to-Source Voltage V dV/dt Peak Diode Recovery V/ns T J Operating Junction and ° C T STG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy mJ I AR Avalanche Current A E AR Repetitive Avalanche Energy mJ Thermal Resistance Symbol Parameter Typ. Max. Units R θJC Junction-to-Case ––– 0.50 R θCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 ––– ° C/W R θJA Junction-to-Ambient, TO-220 ––– 62 R θJA Junction-to-Ambient (PCB Mount) , D 2 Pak ––– 40 300 Max. 130 92 550 980 See Fig. 14, 15, 22a, 22b, 300 14 -55 to + 175 ± 20 2.0 10lb in (1.1N m)
description
mosfet
Transcript of Irfb4310 Mosfet
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01/31/06
Benefits Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt CapabilityLead-Free
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D2PakIRFS4310PbF
TO-220ABIRFB4310PbF
TO-262IRFSL4310PbF
IRFB4310PbFIRFS4310PbF
IRFSL4310PbFHEXFETPower MOSFETApplications
High Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Switched and High Frequency Circuits
S
D
G
SDGSDG
SDG
VDSS 100VRDS(on) typ. 5.6m max. 7.0mID 130A
Absolute Maximum RatingsSymbol Parameter Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V AID @ TC = 100C Continuous Drain Current, VGS @ 10VIDM Pulsed Drain Current PD @TC = 25C Maximum Power Dissipation W
Linear Derating Factor W/CVGS Gate-to-Source Voltage VdV/dt Peak Diode Recovery V/nsTJ Operating Junction and CTSTG Storage Temperature Range
Soldering Temperature, for 10 seconds(1.6mm from case)Mounting torque, 6-32 or M3 screw
Avalanche CharacteristicsEAS (Thermally limited) Single Pulse Avalanche Energy mJIAR Avalanche Current AEAR Repetitive Avalanche Energy mJ
Thermal ResistanceSymbol Parameter Typ. Max. Units
RJC Junction-to-Case 0.50RCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/WRJA Junction-to-Ambient, TO-220 62RJA Junction-to-Ambient (PCB Mount) , D2Pak 40
300
Max.13092550
980See Fig. 14, 15, 22a, 22b,
300
14-55 to + 175
202.0
10lbin (1.1Nm)
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Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75ARepetitive rating; pulse width limited by max. junction
temperature. Limited by TJmax, starting TJ = 25C, L = 0.35mH RG = 25, IAS = 75A, VGS =10V. Part not recommended for use above this value. ISD 75A, di/dt 550A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.
S
D
G
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.R is measured at TJ approximately 90C.
Static @ TJ = 25C (unless otherwise specified)Symbol Parameter Min. Typ. Max. Units
V(BR)DSS Drain-to-Source Breakdown Voltage 100 VV(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.064 V/CRDS(on) Static Drain-to-Source On-Resistance 5.6 7.0 mVGS(th) Gate Threshold Voltage 2.0 4.0 VIDSS Drain-to-Source Leakage Current 20 A
250IGSS Gate-to-Source Forward Leakage 200 nA
Gate-to-Source Reverse Leakage -200RG Gate Input Resistance 1.4 f = 1MHz, open drainDynamic @ TJ = 25C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unitsgfs Forward Transconductance 160 SQg Total Gate Charge 170 250 nCQgs Gate-to-Source Charge 46 Qgd Gate-to-Drain ("Miller") Charge 62 td(on) Turn-On Delay Time 26 nstr Rise Time 110 td(off) Turn-Off Delay Time 68 tf Fall Time 78 Ciss Input Capacitance 7670 pFCoss Output Capacitance 540 Crss Reverse Transfer Capacitance 280 Coss eff. (ER) Effective Output Capacitance (Energy Related) 650 Coss eff. (TR) Effective Output Capacitance (Time Related) 720.1 Diode Characteristics
Symbol Parameter Min. Typ. Max. UnitsIS Continuous Source Current 130 A
(Body Diode)ISM Pulsed Source Current 550
(Body Diode)VSD Diode Forward Voltage 1.3 Vtrr Reverse Recovery Time 45 68 ns TJ = 25C VR = 85V,
55 83 TJ = 125C IF = 75AQrr Reverse Recovery Charge 82 120 nC TJ = 25C di/dt = 100A/s
120 180 TJ = 125CIRRM Reverse Recovery Current 3.3 A TJ = 25Cton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ConditionsVDS = 50V, ID = 75AID = 75A
VGS = 20VVGS = -20V
MOSFET symbolshowing the
VDS = 80V
Conditions
VGS = 10V VGS = 0VVDS = 50V = 1.0MHzVGS = 0V, VDS = 0V to 80V , See Fig.11VGS = 0V, VDS = 0V to 80V , See Fig. 5
TJ = 25C, IS = 75A, VGS = 0V
integral reversep-n junction diode.
ConditionsVGS = 0V, ID = 250AReference to 25C, ID = 1mAVGS = 10V, ID = 75A VDS = VGS, ID = 250AVDS = 100V, VGS = 0VVDS = 100V, VGS = 0V, TJ = 125C
ID = 75ARG = 2.6
VGS = 10V VDD = 65V
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Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
Fig 2. Typical Output Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source VoltageFig 5. Typical Capacitance vs. Drain-to-Source Voltage
3.0 4.0 5.0 6.0 7.0 8.0
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
I D,
Dra
in-to
-So
urc
e
Curr
en
t ()
VDS = 50V 60s PULSE WIDTH
TJ = 25C
TJ = 175C
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
0.5
1.0
1.5
2.0
2.5
3.0
RD
S(o
n) ,
Dra
in-to
-So
urc
e
On
Re
sist
an
ce
(No
rma
lize
d)
ID = 75AVGS = 10V
1 10 100
VDS, Drain-to-Source Voltage (V)
0
2000
4000
6000
8000
10000
12000
C,
Capa
cita
nce
(pF)
CossCrss
Ciss
VGS = 0V, f = 1 MHZCiss = Cgs + Cgd, Cds SHORTEDCrss = Cgd Coss = Cds + Cgd
0 40 80 120 160 200 240 280 QG Total Gate Charge (nC)
0
4
8
12
16
20
V GS,
Ga
te-to
-So
urc
e
Volta
ge
(V) VDS= 80V
VDS= 50VVDS= 20V
ID= 75A
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
1
10
100
1000I D
,
Dra
in-to
-So
urc
e
Curr
en
t (A)
60s PULSE WIDTHTj = 25C4.5V
VGSTOP 15V
10V8.0V6.0V5.5V5.0V4.8V
BOTTOM 4.5V
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
10
100
1000
I D,
Dra
in-to
-So
urc
e
Curr
en
t (A)
60s PULSE WIDTHTj = 175C
4.5V
VGSTOP 15V
10V8.0V6.0V5.5V5.0V4.8V
BOTTOM 4.5V
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Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain DiodeForward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs.Case Temperature
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-to-Drain Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I SD
,
Re
vers
e
Dra
in
Curr
en
t (A)
TJ = 25C
TJ = 175C
VGS = 0V
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (C)
100
105
110
115
120
V (BR
)DSS
,
Dra
in-to
-So
urc
e
Bre
akd
ow
n
Volta
ge
0 20 40 60 80 100 120
VDS, Drain-to-Source Voltage (V)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Ene
rgy
(J)
25 50 75 100 125 150 175
Starting TJ, Junction Temperature (C)
0
400
800
1200
1600
2000
2400
E AS,
Sin
gle
Puls
e
Ava
lan
che
Ene
rgy
(mJ)
I DTOP
12A 17ABOTTOM
75A
1 10 100 1000VDS , Drain-toSource Voltage (V)
0.1
1
10
100
1000
10000
I D,
Dra
in-to
-So
urc
e
Curr
en
t (A)
Tc = 25CTj = 175CSingle Pulse
1msec
10msec
OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
DC
25 50 75 100 125 150 175 TC , Case Temperature (C)
0
20
40
60
80
100
120
140
I D,
Dra
in
Curr
en
t (A)
Limited By Package
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1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
The
rma
l Re
spo
nse
( Z th
JC
)
0.200.10
D = 0.50
0.020.01
0.05
SINGLE PULSE( THERMAL RESPONSE )
Notes:1. Duty Factor D = t1/t22. Peak Tj = P dm x Zthjc + Tc
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 14. Typical Avalanche Current vs.Pulsewidth
Fig 15. Maximum Avalanche Energy vs. Temperature
Ri (C/W) i (sec)0.1962 0.001170.2542 0.016569
JJ
11 2
2
R1R1 R2
R2
C
Ci= i/RiCi= i/Ri
Notes on Repetitive Avalanche Curves , Figures 14, 15:(For further info, see AN-1005 at www.irf.com)1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far inexcess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long as neither Tjmax nor Iav (max) is exceeded.3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.4. PD (ave) = Average power dissipation per single avalanche pulse.5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).6. Iav = Allowable avalanche current.7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25C in Figure 14, 15).tav = Average time in avalanche.D = Duty cycle in avalanche = tav fZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3BVIav) =T/ ZthJCIav = 2T/ [1.3BVZth]EAS (AR) = PD (ave)tav
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (C)
0
200
400
600
800
1000
E AR
,
Ava
lan
che
Ene
rgy
(mJ)
TOP Single Pulse BOTTOM 1% Duty CycleID = 75A
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.1
1
10
100
Ava
lan
che
Curr
en
t (A)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C.
0.01
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
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Fig 16. Threshold Voltage Vs. Temperature
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( C )
1.0
2.0
3.0
4.0
5.0V G
S(th
) Ga
te
thre
sho
ld
Volta
ge
(V) ID = 1.0A
ID = 1.0mAID = 250A
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
0
4
8
12
16
20
I RR
M
-
(A)
IF = 30AVR = 85VTJ = 125C TJ = 25C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
0
100
200
300
400
500
Q RR
-
(nC)
IF = 30AVR = 85VTJ = 125C TJ = 25C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
0
100
200
300
400
500
Q RR
-
(nC)
IF = 45AVR = 85VTJ = 125C TJ = 25C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / s)
0
4
8
12
16
20
I RR
M
-
(A)
IF = 45AVR = 85VTJ = 125C TJ = 25C
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Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
VGS
VDS90%
10%
td(on) td(off)tr tf
VGSPulse Width < 1sDuty Factor < 0.1%
VDD
VDSLD
D.U.T
+
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Fig 22b. Unclamped Inductive WaveformsFig 22a. Unclamped Inductive Test Circuit
tp
V(BR)DSS
IAS
RG
IAS
0.01tp
D.U.T
LVDS
+-
VDD
DRIVER
A
15V
20VVGS
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
Vds
Vgs
Id
Vgs(th)
Qgs1 Qgs2 Qgd Qgodr
Fig 21. !for N-ChannelHEXFETPower MOSFETs
1K
VCCDUT
0
L
P.W. Period
di/dt
Diode Recoverydv/dt
Ripple 5%
Body Diode Forward DropRe-AppliedVoltage
ReverseRecoveryCurrent
Body Diode ForwardCurrent
VGS=10V
VDD
ISD
Driver Gate Drive
D.U.T. ISD Waveform
D.U.T. VDS Waveform
Inductor Curent
D = P.W.Period
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"
+
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+
+
+-
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!"!!
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8 www.irf.comTO-220AB packages are not recommended for Surface Mount Application.
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TO-262 Part Marking Information
TO-262 Package OutlineDimensions are shown in millimeters (inches)
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"
##
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Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/06
!
3
4
4
TRR
FEED DIRECTION
1.85 (.073)1.65 (.065)
1.60 (.063)1.50 (.059)
4.10 (.161)3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)10.70 (.421)
16.10 (.634)15.90 (.626)
1.75 (.069)1.25 (.049)
11.60 (.457)11.40 (.449)
15.42 (.609)15.22 (.601)
4.72 (.136)4.52 (.178)
24.30 (.957)23.90 (.941)
0.368 (.0145)0.342 (.0135)
1.60 (.063)1.50 (.059)
13.50 (.532)12.80 (.504)
330.00(14.173) MAX.
27.40 (1.079)23.90 (.941)
60.00 (2.362) MIN.
30.40 (1.197) MAX.
26.40 (1.039)24.40 (.961)
NOTES :1. COMFORMS TO EIA-418.2. CONTROLLING DIMENSION: MILLIMETER.3. DIMENSION MEASURED @ HUB.4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/
