Intelligent Epitaxy Technology, Inc.

Intelligent Epitaxy Technology, Inc.2006

Intelligent Epitaxy Technology, Inc.

Company Information

IntelliEPI1250 E. Collins Blvd.

Richardson, TX 75081USA

E-mail: [email protected] Site: www.IntelliEPI.com

Japanese Agent: ATN JapanE-mail: [email protected] Site: www.ATNJapan.com


Company Information Update• Facility and Products• Capabilities and in-situ monitoring technology

Selected Product Highlights• HBT Activities (InP-based HBT, HBT w/ GaAaSb base)• PIN & QWIP

RecognitionsSummary

IntelliEPI: Outline


IntelliEPI: The Company

• A Texas semiconductor manufacturing company located in Richardson, TX, since January 1999

• Founded by Dr. Yung-Chung Kao (from TI), Dr. Paul Pinsukanjana (from JPL/UCSB), and 2 co-founders (TI), combining experiences in electronics and optoelectronics

MissionTo serve the III-V semiconductor industries with proprietary MBE

growth monitoring and manufacturing know-how to fabricate best-valued epitaxial wafers for wireless telecommunication and

optoelectronics applications


IntelliEPI: Facility at Richardson, Texas

Current facility since January 2002: 1250 E. Collins, Richardson, TX • 23,000 ft2 (production: 13,000 ft2; Office: 10,000 ft2)• Currently hosts 7 MBE systems (Set up for 8 production systems)• Class 100 clean room for post growth testing and Large Area

Device processing


MBE Facility at IntelliEPI’s Facility in Richardson, Texas

• 7 MBE reactors:– One Riber 7000 (7x6”, 14x4”)– Three Riber 6000 (4x6”, 9x4”, 15x3”)– Three Riber 49 (4x4”, 5x3”)

• Dedicated operation and cleaning facilities designed to handle phosphorous for all 7 MBE systems

Riber 7000


Post-growth Characterization Capability• Class 100 clean room:

(2000 ft2)

• Characterization tools: – X-ray diffraction– PL mapping– Surface particle scan– Hall measurement– Contactless resistivity mapping– Electro-chemical CV profiling– White light reflection

spectrometer– Electrical CV profiling– Mercury probe CV


IntelliEPI: Current Available Products

RF and microwave

High Speed Digital

Optoelectronics

Applications

• RF components in handsets

• Automotive radar

• Defense related

• OC768- 40Gbps network

• OC192-10Gbps network

• Fiber optic network light sources and Photo-detectors

Device Structure

(Red in Production mode)

• GaAs pHEMT • GaAs mHEMT • InP HEMT • InP HBT

• InP HBT • InP HEMT • GaAs mHEMT • GaAsSb DHBT • GaAs mHBT

• GaAs PIN • InP PIN/APD • QWIP • VCSEL • 980 pump laser


IntelliEPI: Thickness Uniformity Across Platen for 7x6” MBE

• Thickness variation across platen < 1% across 7X6” platen configuration• Si doping GaAs layer uniformity by contactless resistivity mapping:

– 6” wafer doping variation < 1%– Difference from center wafer to outside wafer < 0.5%

2,500Å GaAs

2,000Å AlAs

GaAs substrate

7X6” platen

Riber 7000 thickness uniformitymeasured by white light reflection

97.0

98.0

99.0

100.0

101.0

102.0

103.0

0 50 100 150 200 250Platen radial position (mm)

Nor

mal

ized

thic

knes

s (%

)

GaAl

Center wafer Outside wafer


CBr4 Carbon Doping of P-type InGaAs

Sheet resistance measurement using Lehighton showsthe resistivity across 4” wafer grown from a 4x4 MBE system. The epi layer is a 350 nm thick InGaAs doped at 4e19 cm-3.

2 10193 10194 1019

5 10196 10197 10198 1019

9 10191 1020

0 2 10-8 4 10-8 6 10-8 8 10-8

CBr4

CBr4 BEP (Torr)

0.0 2 1019 4 1019 6 1019 8 1019 1 102030

40

50

60

70

Condition 1Condition 2Condition 3

Hole concentration (cm-3)


Production MBE Operation Improvement by In Situ Sensors

• Run-to-run reproducibility:– Maintaining critical specification ranges– Verification of growth process details (condition and layers)

• Limitations of ex-situ characterization:– Slow post-growth feedback– Additional wafer handling and cost– Limited information about growth condition profile vs. epi-depth

• New product development:– Faster development cycle time– Improved performance for more demanding specifications

• Bad run detection/correction/termination:– Loss of wafers: very expensive for larger systems and for InP– Wasted machine time, materials, & operating expenses


Overview of IntelliEPI in-situ Sensor Technologies• Substrate temperature

– Pyrometry– Absorption Band-Edge Spectroscopy

(ABES): band-gap dependence on temp

• Materials composition– Optical-based Flux Monitor (OFM):

atomic absorption of group III fluxes

• Growth rate– Optical Reflectometry– Pyrometric Interferometry

ABES light source:Light pipe, orHeater filament

Optical Pyrometer

Optical Reflectometry

OFM

OFM setup

Absorption Band-Edge Spectroscopy,Pyrometer, and

Laser Reflection.


PHEMT In-situ Composition Monitoring with OFM

• Direct composition monitoring for each critical layer• In-situ composition monitoring for key layers:

– InGaAs Channel: Accurate x-ray measurement– AlGaAs Gate: X-ray represents average of SL and Gate– InGaP Etch Stop: Very thin layer limits x-ray accuracy

0

10

20

30

2000 2500 3000 3500

AlGaIn

atom

ic a

bosr

ptio

n (%

)

time (sec)

30348D

n+ GaAs Cap

n InGaP Etch Stop

n AlGaAs Gate

AlGaAs Spacer

InGaAs Channel

AlGaAs Spacer

AlGaAs

GaAs

AlGaAs

GaAs Buffer

GaAs Substrate

SL

Si - delta

PHEMT Structure

OFM Profile During PHEMT Growth

AlGaAsGate

InGaPEtchStop

InGaAsChannel

GaAs/AlGaAsSL


IntelliEPI: InP SHBT/DHBT StatusStrong Customer Base Facilitates Fast Structure Optimization• US and Japan foundries and companies• Both C and Be doped SHBTs and DHBTs• HBT-PIN and HBT-Opto structure integration

In-House Large Area Device (LAD) Fabrication Capability• Fast turn around (~8 hours)• Correlation with customers device characteristics• CV measurements for device fine tune• Correlation with in-house in situ growth database

Developed GaAsSb-base HBT under DARPA TFAST Program• GaAsSb-base up to 1e20 cm-3 carbon doping


IntelliEPI: InP-HBT Experience HighlightsPohang University of Science and Technology (POSTECH): InP-HBT results• Fmax = 689 GHz (Postech/IntelliEPI, IEDM, San Francisco, December 2004)

University of Illinois, Urbana Champaign: InP-HBT results• Most recent data: Ft = 710 GHz (Hafez et al. Appl. Phys. Lett., 87, 2005)

Vitesse: IntelliEPI is the epi materials supplier for all the InP efforts• High level of integration VIP-1 SHBT: ~5000 transistors inside 3 mm square die• 100% transistor yield for VIP-2 DHBT: over 450 GHz Ft and Fmax (DARPA – TFAST)

IntelliEPI works with several companies in US, Japan, and Taiwan to explore the PA applications using InP DHBTs

Emitter

Base

Collector

0.25 µm

Emitter

Base

Collector

0.25 µm


InP/InGaAs SHBT with High Base doping DC Characteristics

Layer comment Material Thickness (Å)

Dopant Level (/cm3)

7 InGaAs:Si In(x)Ga(1-x)As 500 Si 2.00E+196 InP :Si InP 500 Si 1.0E+195 InP :Si InP 500 Si 5.0E+174 InGaAs :C In(x)Ga(1-x)As 400 C 8.0E+193 InGaAs :Si In(x)Ga(1-x)As 2,000 Si 2.0E+162 InP :Si InP 100 Si 2.00E+191 InGaAs :Si In(x)Ga(1-x)As 4,000 Si 2.00E+19

Substrate InP

Gain vs Current Density

0

5

10

15

20

25

30

1.E+00 1.E+01 1.E+02 1.E+03 1.E+04

Current Density(A/cm2)

Cur

rent

Gai

n

1E-11

1E-09

1E-07

1E-05

1E-03

1E-01

1E+01

0.0 0.5 1.0Vbe (V)

Cur

rent

(A)

ICIB

Gummel Plots

• Current Gain24 @ 10A/cm2, 25 @ 100A/cm2,26 @ 1kA/cm2

• Base Rbs (TLM)406 Ohm/sq

• Current cross-over< 1.0E-9 A

• Von @ 5A/cm2542 mV


X-ray data of GaAsSb uniformity across 4x4” platen

-1500 -1000 -500 0 500 1000 1500

Diffaction Angle (arc-sec)

Inte

nsity

(arb

uni

ts)

r = 118.5 mmr = 113.5 mmr = 98.5 mmr = 78.5 mmr = 58.5 mmr = 43.5 mmr = 38.5 mm

Center of Platen

Outside of platen

0.490

0.495

0.500

0.505

0.510

0.515

0.520

0 50 100Position on Platen (mm)

Sb C

ompo

sito

n (x

)

4 X 4" platen

5 X 3" platen

• GaAsSb composition uniformity is within ±0.1 atomic percent across 4x4” platen

4”

11


• Current Gain34.3 @ 10A/cm2, 36.6 @ 100A/cm2,38.1 @ 1kA/cm2

• Base Rbs (TLM)885.9 Ohm/sq

• Current cross-over< 1.0E-9 A

• nc = 1.10; nb = 1.29

InAlAs emitter GaAsSb DHBT (Improved E-B junction )

InAlAs/GaAsSb/InP DHBT DC characteristics

1.0E-091.0E-081.0E-071.0E-061.0E-051.0E-041.0E-031.0E-021.0E-01

0.0 0.5 1.0 1.5Vbe (V)

Cur

rent

(A)

ICIB

I-V Characteristics, 50x50 um 2

0.0E+002.0E-034.0E-036.0E-038.0E-031.0E-021.2E-021.4E-021.6E-021.8E-022.0E-02

0.0 2.0 4.0Vce (V)

Ic (A

)

Layer Comment Material x Thick. (Å) Dop. Level (/cm3)

Type

8 Emitter cap In(x)Ga(1-x)As 0.532 1,000 Si 3.0E+19 N+7 Emitter cap InP 300 Si 5.0E+18 N+6 Emitter InP 300 Si 5.0E+17 N5 Emitter In(x)Al(1-x)As 0.522 150 Si 5.0E+17 N4 Base GaAs(1-x)Sb(x) 0.513 400 C 4.5E+19 P+3 Collector InP 2,000 Si 3.0E+16 N2 Subcollector 1 InP 500 Si 5.0E+18 N1 Etch stop In(x)Ga(1-x)As 0.532 2,000 Si 3.0E+19 N+

Substrate


• Gain18.8 @ 10A/cm2,20.5 @ 100A/cm2,22.1 @ 1kA/cm2

• Base Rbs (TLM)956.4

• Current cross-over1.0E-9 A

• nc =1.08; nb = 1.30

InAlAs emitter GaAsSb DHBT (Thin Base/Heavy Doping )

InAlAs/GaAsSb(1E20 cm-3)/InP DHBT DC Characteristics

Layer Comment Material x Thick. (Å) Dop. Level (/cm3)

Type

8 Emitter cap In(x)Ga(1-x)As 0.532 1,000 Si 3.0E+19 N+7 Emitter cap InP 300 Si 5.0E+18 N+6 Emitter InP 300 Si 1.0E+18 N5 Emitter In(x)Al(1-x)As 0.532 150 Si 1.0E+18 N4 Base GaAs(1-x)Sb(x) 0.513 200 C 1.0E+20 P+3 Collector InP 2,000 Si 3.0E+16 N2 Subcollector 1 InP 500 Si 5.0E+18 N1 Etch stop In(x)Ga(1-x)As 0.532 2,000 Si 3.0E+19 N+

Substrate

1.0E-091.0E-081.0E-071.0E-061.0E-051.0E-041.0E-031.0E-021.0E-01

0.0 0.5 1.0 1.5

Vbe (V)

Cur

rent

(A)

ICIB

I-V Characteristics, 50x50 um 2

0.0E+00

2.0E-03

4.0E-03

6.0E-03

8.0E-03

1.0E-02

1.2E-02

0.0 2.0 4.0 6.0Vce (V)

Ic (A

)


Low Intrinsic Background InGaAs on InP

IntelliEPI’s optimized MBE PIN advantages:• Nearly depleted at 0V bias• Background doping level better than

MOCVD• Intrinsic InGaAs mobility from 10 –

12x103 cm2/V·sec

0

0.05

0.1

0.15

-10-8-6-4-202

MOCVDTypical MBEOptimized MBE

Cap

/Are

a (fF

/µm

2 )

V bias (V)

1013

1014

1015

1016

1017

5000 1 104 1.5 104 2 104 2.5 104

Ne (c

m-3

)

Depletion Depth (Å)

CV profile comparison CV Doping profile vs. depth

P+ layer (InP)

i-layer (2um InGaAs)

N+ layer (InP)InP substrate

5,000

7,000

9,000

11,000

13,000

15,000

1.00E+14 1.00E+15 1.00E+16Electron Concentration (cm-3)

Hal

l Mob

ility

(cm

2 /Vs) IET typical conditions

IET optimized conditionsPublished data from MBEPublished data from MOCVD

Comparison of InGaAs Hall Mobility


High Speed InGaAs/InP PIN Photodetector from MBE

• Average 3 dB bandwidth of ~ 4.6 GHz @ –2V• Dark current well below 1 nA @ –2V

1.E-10

1.E-09

1.E-08

0 5 10 15 20 25 30Reverse bias voltage (V)

Dar

k cu

rren

t (A

)

0.80.820.840.860.880.9

0.920.940.960.98

1

-5-4-3-2-10Applied voltage (V)

Res

pons

ivity

(A/W

)

0C40C80C120C

0.E+00

2.E+09

4.E+09

6.E+09

8.E+09

-5-4-3-2-10Applied voltage (V)

Freq

uenc

y (H

z)

40C

0200400600800

10001200

2.0

2.4

2.8

3.2

3.6

4.0

4.4

4.8

5.2

5.6

6.0

3dB Bandwidth (GHz)

Num

ber o

f Res

ults

Standard I-layer Doping

Improved I-layer Doping

Data Courtesy

ofVITESSE

75 µm Diameter Active Area

Dark Current

Photo response @ 1550 nm

3 dB Bandwidth @ 1550 nm

3 dB Bandwidth Histogram Across 4” Wafer

Bias@ –2V


IntelliEPI: QWIP Production Experience

• Stability of growth rate during long repeated structure as indicated by narrow x-ray peaks

• Excellent interface and materials quality as indicated by sharp x-ray peaks• ±0.5% thickness uniformity across 6 inch diameter wafer based on x-ray• Achieved 100% pixel yield with 320x256 format FPA

Riber60004x6” Platen

Courtesy of QmagiQ

8.6 µm thermal image taken with large format 640x512 QWIP FPA IntelliEPI. Die size ~16x13 mm2.1

10

100

1000

104

105

106

-4000 -2000 0 2000 4000

Platencenter6" Inner6" center6" outerC

ount

Angle (Arcsec)

10511F

004 x-ray scans across platen


IntelliEPI: Device Data for QWIP FPA

0

0.2

0.4

0.6

0.8

1

1.2

5 6 7 8 9 10 11

Normalized Spectra

-5V-4V-3V-2V-1V

Nor

mal

ized

Inte

nsity

Wavelength (µm) 0

5

10

15

20

25

30

35

-5 -4 -3 -2 -1 0 1 2 3 4 5

Blackbody Responsivity

123456789

RB

B (mA

/W)

Bias (V)

Blackbody Source Temperature = 500 K

10 15 20 25 30 35 400

500

1000

1500

2000

2500

3000

3500

4000

NETD Value (mK)

Num

ber o

f Occ

uren

ces

NETD (mK) for 25-C Scene Temperature

mean = 22.3 mKsigma = 2.8 mKsigma/mean = 12.5%

F/4 Optics

320x256

37 38 39 40 41 42 43 440

1000

2000

3000

4000

5000

6000Photoresponse (mV/degree) @ 25 C

Photoresponse Value (mV/degree)

Num

ber o

f Occ

uren

ces

mean = 39.7 mV/K

sigma = 0.79 mV/K

sigma/mean = 2%

F/4 Optics

320x256

664400xx551122

332200xx225566

• 320x256 and 640x512 formats• LWIR band, 8.6-mm peak wavelength• Optical response uniformity ≈ 2%• Average NEDT less than 25 mK at F/4• Operability greater than 99.8%

Data Courtesy

of QmagiQ


IntelliEPI: Dual-color QWIP

• 2-color per pixel in 320x256 format • Dual-band for MWIR and LWIR• Epi materials on 6” GaAs

Data Courtesy

of QmagiQ


QA/QC Procedures• SPC process is implemented to all production jobs• System Calibrations to ensure accuracy and consistency in

–Doping concentration–Growth rate and composition–Temperature control for different platens and loading –Reproducible system conditions for growth

• Incoming materials QC to ensure all substrates qualification• Final products QC to maintain consistency in epi-wafer

quality and documentation accuracy• Currently on schedule to be ISO9001 compliant in 1Q/05 and

ISO certified within 2005


IntelliEPI: Sample SPC Charts – Total Sheet Resistivity


IntelliEPI: Sample SPC Charts – Defect Density


IntelliEPI: Sample SPC Charts – Haze ppm


IntelliEPI: Customer Feedback Data Analysis (Idss)

• Very tight Idss data distribution (~3%) for 5,000 pHEMTs over 4 campaigns• Slight adjust-up based on customer preference in the latest campaign

43.442.040.639.237.836.435.033.6

System

F-01F-03

D-03D-04

Median

Mean

39.02539.00038.97538.95038.92538.900

A nderson-Darling Normality Test

V ariance 2.073Skewness -0.192924Kurtosis 0.109487N 4969

Minimum 33.800

A -Squared

1st Q uartile 37.960Median 38.9803rd Q uartile 39.960Maximum 43.880

95% C onfidence Interv al for Mean

38.885

2.61

38.965

95% C onfidence Interv al for Median

38.920 39.020

95% C onfidence Interv al for StDev

1.412 1.469

P-V alue < 0.005

Mean 38.925StDev 1.440

95% Confidence Intervals

Summary for Avg_Idss


IntelliEPI: Customer Feedback Data Analysis (Vpinch-off)

• Vp data distribution tight (< 6%) for 4 campaigns• Very little machine/campaign dependence found in Vp data

-0.63-0.70-0.77-0.84-0.91-0.98-1.05

System

F-01F-03

D-03D-04

Median

Mean

-0.875-0.876-0.877-0.878-0.879-0.880

A nderson-Darling Normality Test

V ariance 0.00294Skewness 0.29836Kurtosis 1.23699N 3613

Minimum -1.08000

A -Squared

1st Q uartile -0.91000Median -0.880003rd Q uartile -0.84000Maximum -0.58000

95% C onfidence Interv al for Mean

-0.87915

10.12

-0.87561

95% C onfidence Interv al for Median

-0.88000 -0.88000

95% C onfidence Interv al for StDev

0.05302 0.05552

P-V alue < 0.005

Mean -0.87738StDev 0.05424

95% Confidence Intervals

Summary for MED_Vp


IntelliEPI: 4-Times (01-04) Supplier of the Year Award from VITESSE

• Vitesse is World’s leading InP foundry

• All Vitesse’s 10G and 40G InP circuits (HBT and PIN) are solely based on IntelliEPI’s epi-wafers

• IntelliEPI supplies all InP epi-wafers for production and development

• IntelliEPI received awards due to quality, price, service, and innovation

• IntelliEPI’s in-growth sensor data is open to Vitesse processing correlation

• IntelliEPI provides 100% customer satisfaction guaranty

VITESSE SEMICONDUCTOR CORPORATION

VITESSE

741 Calle Plano Camarillo, CA 93012 Tel (805) 388-3700 Fax (805) 987- 5896

April 15, 2002

Dr. Yung-chung Kao President/CEO Intelligent Epitaxy Technology, Inc. 201 East Apapaho Road, Suite 200 Richardson, TX 75081 Dear Dr. Kao: It is my pleasure to advise you that Intelligent Epitaxy Technology, Inc. has been selected as one of eleven Suppliers of the Year for 2001.

As you may know, we have a Supplier and Subcontractor Rating Procedure in place and we use the rating results to recognize top performers. The rating definitions are Quality, Flexibility, Pricing, Customer Service and Strategic Advantage.

In past years, we have held a Supplier of the Year Dinner. However, due to the industry downturn and in order to curb expense for all of us, I would like you to accept the enclosed Plaque with my congratulations for a job well done.

It is my sincere and earnest hope that we continue to maintain this mutually beneficial relationship in the years ahead.

Sincerely,

Louis R. Thomasetta

President Chief Executive Officer c.c. Mr. Jim Fang Sales Marketing Director


IntelliEPI: Summary

IntelliEPI’s real-time sensors monitor growth and maintain reproducible conditions• Non-invasive; early identification of problems during run:

immediate feedback• Yield improvement, fast product development and delivery

IntelliEPI developed advanced MBE growth technology and materials• High volume GaAs product such as PHEMTs for handset switch

applications• High performance InP based HBTs and PINs for fiber optical

applicationsIntelliEPI provides 100% customer satisfaction guaranty

Intelligent Epitaxy Technology, Inc.

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