Indus Asignmnet

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Example Create a table showing the comparison between the characteristic of vacuum tubes and solid state devices in terms of their a) Physical Size b) Power Consumption c) Relability d) Application Example a) What is a discrete sensor? b) What is the classification of discrete sensors? c) Give at least 20 examples of discrete sensors, showing I. A short historical background II. Symbol, Material Construction and Equivalent Circuit III. Characteristic Curve IV. Application Example A certain 4 layer diode is biased in the forward - blocking region with an anode – to – cathode voltage of 20 V. Under this bias condition, the anode current is 1 µS. Determine the resistance of the diode in the forward blocking region If the anode current is 2 µA and V ak – 20 V, what is the 4-layer diode’s resistance in the forward – blocking region?

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Indus Asignmnet

Transcript of Indus Asignmnet

ExampleCreate a table showing the comparison between the characteristic of vacuum tubes and solid state devices in terms of theira) Physical Sizeb) Power Consumptionc) Relabilityd) Application

Examplea) What is a discrete sensor?b) What is the classification of discrete sensors?c) Give at least 20 examples of discrete sensors, showingI. A short historical backgroundII. Symbol, Material Construction and Equivalent CircuitIII. Characteristic CurveIV. Application

ExampleA certain 4 layer diode is biased in the forward - blocking region with an anode to cathode voltage of 20 V. Under this bias condition, the anode current is 1 S. Determine the resistance of the diode in the forward blocking regionIf the anode current is 2 A and Vak 20 V, what is the 4-layer diodes resistance in the forward blocking region?

ExampleDetermine the value of anode current in Fig 11-5 when the device is on VBR(F) = 100 V. Assume VBE = 0.7 V and VCE = 0.1V for the internal transistor structure.

ExampleFor a Shockley Diode, fill in the following:a) As a switch:I. To turn on:i.ii.II. To turn off:b) ApplicationI.II.

Example a) Who invented (developed) the SCR?b) What motivates them to create the SCR?c) What are the (basic) applications of an SCR? d) How do you turn ON and OFF an SCR?e) Why is it the SCRs cannot be turned off using the gate?ExampleDefine the following SCR characteristicsa) Forward Breakover Voltageb) Holding Currentc) Gate Trigger Currentd) Average Forward Currente) Forward Conduction Regionf) Forward Blocking Regiong) Reverse Blocking Regionh) Reverse Breakdown Region

Examplea) Find the gate and anode current when switch SW1 is momentarily closed. Use VAK =0.8V, VGK = 0.7 V, IH = 20mA. b) If VA = 12V, will the SCR be able to latch?c) How will the SCR be turned off after it was turned ON?

ExampleAnswer the following questions:a) What is the Firing Angleb) What is the Conduction Anglec) What is possible range of the firing and conduction angles of an SCR?

ExampleIf never triggered, show the waveform of the voltage:a) Across the SCRs anode to cathodeb) Across the Load

ExampleConsider the SCR circuit shown.a) What is the input voltage that turns the SCR on?b) What supply voltage turns it off?

Page 58For the Phototransistor, Photodarlington, Opto - Isolator and Opto Triac:a) Defineb) Draw their symbol and equivalent circuit and material construction.c) Draw and explain their characteristic curves.d) Explain basic operatione) Give examples of their application showing the schematic diagram and a brief explanation on how it works.

Page 57a) Draw the material construction of IGBT.b) Draw and explain the characteristic curve of an IGBTc) Explain the switching operation of IGBTd) Differentiate IGBT from its equivalent in the thyristor family

Page 561. Draw the material construction of SUS 2. Summarize the ways on how the SUS is turned on3. Summarize the ways on how the SUS is turned off

Page 54a) Compare the structure of UJT to that of the PUTb) How does the PUT turns on?c) How can be PUT turned off?d) Compare the switching action of the PUT to the SCRe) Explain the programmable part of the PUT.