IBM65, TSMC65 & ST65 Characterization and Comparison

with IBM90 and UMC130

FO-4 Delay

Inverter Chain

NAND Chain

Emin ComparisonVmin - IBM65: 0.43V TSMC65: 0.41V ST65: 0.41V IBM90: 0.39V UMC130: 0.36V

Delay(@ Emin) - IBM65: 0.490ns TSMC65: 0.28ns ST65: 0.2ns IBM90: 3.09ns UMC130: 1.76ns

gm vs. Id

Energy and Delay Capacitances

Current Density

TT

FF

SS

• IBM 90 : ~ 24 % Variation

• IBM 65 : ~ 19-24 % Variation

• TSMC 65 : ~ 22-28 % Variation

• ST65 : ~ 16-20% Variation

Ion/Ioff at the TT Corner

NFET PFET

Ion/Ioff vs Length

0

50

100

150

200

250

300

350

400

450

50 150 250 350 450

Length (nm)

Ion

/Io

ff (

x10^

3)

IBM65

IBM90

TSMC65

ST65

Ion/Ioff vs Length

0

100

200

300

400

500

600

700

50 150 250 350 450

Length (nm)Io

n/Io

ff (

x10^

3)

IBM65

IBM90

TSMC65

ST65

Vth vs. LengthTSMC65 ~ 17% Variation IBM65 ~ 23% Variation ST65 ~ 15% Variation

NFET

PFET

Ron Values

gm vs. Vgs

IBM : 7% Variation TSMC : 3-8% Variation ST : 7% Variation

gmro vs. Vgs at TT• W/L ratio maintained constant over the two technologies

TSMC65IBM65

gmro vs. Vgs at FF

TSMC65IBM65

gmro vs. Vgs at SS

TSMC65 ~ 25% VariationIBM65 ~ 20% Variation

Gate Leakage vs. Vds