IBM Foundry Oxide Thickness

Lithography Process Operating Oxide

Name Voltage Thickness

nm

0.25 µm 6SF 2.5 5

3.3 7

0.13 µm 8RF 1.2 & 1.5 2.2

2.2 & 3.3 5.2

Satish Dhawan, Yale University September 21, 2009

Company Device Process Foundry Oxide Time in Dose before Observation

Name/ Number Name Thickness Seconds Damage seen Damage Mode

Country nm

IHP ASIC custom SG25V GOD IHP, Germany 5 53 Mrad slight damage

XySemi FET 2 amps HVMOS20080720 China 7 52 Mrad minimal damage

XySemi XP2201 HVMOS20080720 China 7 In Development

XySemi XPxxxxHVMOS20080720 China 7

In Development Synch Buck

XySemi

XP5062

China

12.3

800

44 krad

loss of Vout regulation

TITPS54620 LBC5 0.35 µm 20 420 23 krad abrupt failure

IR IR3841 9 & 25 230 13 Krads loss of Vout regulation

Enpirion EN5365 CMOS 0.25 µm Dongbu HiTek, Korea 5 11,500 85 krad

Increasing Input Current,

Enpirion EN5382 CMOS 0.25 µm Dongbu HiTek, Korea 5 2000 111 Krads loss of Vout regulation

Enpirion EN5360 #2 SG25V (IHP) IHP, Germany 5 22 Days 100 Mrads Minimal Damage

Enpirion EN5360 #3 SG25V (IHP) IHP, Germany 5 10 Days 48 Mrads Minimal Damage

Non IBM Foundry ICs

Satish Dhawan, Yale University September 21, 2009 Satish Dhawan, Yale University September 21, 2009

Oxide SiGate

Oxide Trap RegionTunneling RegionThickness ~ 5 nm

Fig A: Physical Location of Defects from their Electrical

response in CMOS devices; ref T.R> Oldham

Fixed ChargeStates

Switching Charge States

GNDSwitching Charge States

V

+ --

- +-+

- -+

+

+ +-

Source

HEMTPulse

Generator0.1 – 2 MHz

50 % Duty Cycle

July 28. 2009 FET Setup for Proton Radiation Exposure @ LANSCE

.

~ 0.070 AmpsPower SupplyV out = 20

Drain

Gate

100

0 to -5 V

Powered FET

DMMDC mV

330 2 Watts 1 Ω

GND

50 ΩTerminator 2 Shorted

FETs

G

DS

Pomona Box

Reading = ~ 0.035 Amps@ 50% Duty Cycle

No change in the average current for 200 Mega rads

30 meter Coax

Model 250Yale University

May 22, 2008

Relay Current Out Vout/ Load Current IN Voltage IN

Input Power

0.5 Ohms

0.05 Ohms

Output Power

+

+

-

-

To Keithley Instruments 2701 Scanning Voltmeter with 7706 Card

A Board: Channels 101 -104B Board: Channels 105 - 108C Board: Channels 109 - 112D Board: Channels 113 - 116

RRed

Orange

BK/O

Black

Blue

Green

Blue/Y or Black

Yellow

Power CableColors

Molex9 pinFemale

Molex9 pinMale

DC-DC

Evaluation

Board

8 Fly WiresSolder toEval Board

5 ft Length

Can AddExtenderCable

DAC: 123, 124DIO : 121,122

101102103104121 CHANNEL Numbers

Power Supply

VInput

5.5 V max to prevent damage.GND

Buck Regulator Eval BoardSize = 3 inch x 3.5 inch

Banana Jacks / Solder Wires

Satish Dhawan, Yale University

Load Resistor = 0.3 to 1.5 Ώ

Line Drop ~ 0.25 volts @ 6 amps in each Leg ???

Twisted Pair Preferred

Twisted Pair Preferred

V Input Monitor. 2 Wire Differential

V Output Monitor 2 wire Differential

Agilent 34970A &Multiplexer 33901Ato Monitor I & V

April 21. 2008 DC-DC Regulator Setup for Radiation Exposure

GND V Output = 1.5 V.

1 to 5 Amps.

~ 0.5 Amps.

V out > 5 – 20 Volts

4 Wire Current shunt

V Output Monitor 2 wire Differential

4 Wire Current shunt

V Output Monitor 2 wire Differential

DC-DC Converter Voltage ratio = 8/10Load: Rated Current or maximum without cooling ~ 1 ampSetup for 4 EVAL BoardsMeasure Bias Current with Load disconnected

Solder all wires ????

Switch on/off