HiSpeed Optical Communication

8/7/2019 HiSpeed Optical Communication

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High Speed Optical Data Communication

A. Huber, R. Bauknecht*

[email protected]

Zentrum fr Mikroelektronik Aargau (ZMA), FH Aargau

CH-5210 Windisch, Switzerland, http://www.zma.ch

*Opto Speed AG, CH-8093 Zrich, Switzerland, http://www.optospeed.ch

TLD 1Alex Huber, 02.10.2000

CopyrightbyZentrum

frMikroelektronikAargau,CH-5210Windisch.


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Outline

Transmission Capacities

Overview of an Optical Communication System

Electronic and Opto-Electronic Circuits

Technologies

Photoreceiver Designs

Conclusion


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Communication Capacity Requirements

Home: 100 Mbit/s

(Voice: 64 kb/s, HiFi: 128 kb/s, Video Image: 1.5 Mb/s, TV: 6 Mb/s, HDTV: 30 Mb/s)

Intra-City Network:

Transmission Capacity: 40 Gbit/s

Node Capacity: 108 Gbit/s

Inter-City Network: Transmission Capacity: 200 Gbit/s

Node Capacity: 270 Gbit/s

National Wide Trunk-Network: Transmission Capacity: 5 Tbit/s Node Capacity: 7 Tbit/s

(Source: K. Hirahara, Optical Communication Roadmap, IEICE Trans. Electron., Vol. E81-C, No. 8, Aug. 1998)

(next 20 years)


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Actual Transmission Capacities

Transmission Rate

Total # of s rate per

TransmissionDistance

Max. Span Developer

3.28 Tb/s 82 40 Gb/s 300 km 100 km Lucent

3.2 Tb/s 160 20 Gb/s 1500 km 45.7 km NEC

1.28 Tb/s 128 10 Gb/s 840 km 140 km Fujitsu

1 Tb/s 100 10 Gb/s 200 km 200 km KDD

1.8 Tb/s 180 10 Gb/s 7000 km 50 km Tyco

1.2 Tb/s 30 42.7 Gb/s 376 km 125 km NTT

1 Tb/s 100 10 Gb/s 400 km 140 km Lucent

320 Gb/s 32 10 Gb/s 750 km 250 km Alcatelwithout WDM: 320 Gb/s (OTDM) 200 km 100 km Lucent

10 Gb/s 26970 km ~ 100 km Tyco

Source: New Optical Communication Technology in the World A Brief Report on OFC 2000

WDM (Wavelength Division Multiplexing): wavelength


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Optical Communication System

Laser Modulator OpticalMUX

EDFA Photodetector

Driver

MUX

Preamplifier

BasebandAmplifier

DistributorClock

Recovery

DistributorDecision

Frequency

DeviderDEMUX

Transmitter

Receiver

Optical DeviceAnalog Electronic IC

Digital Electronic IC

OpticalDEMUX

MultiplexerMUX:DemultiplexerDEMUX:

Erbium-Doped Fiber AmplifierEDFA:


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Si CMOS (fT = 51 GHz, fmax = 28 GHz)

Si Bipolar (fT = 50 GHz, fmax = 73 GHz)

SiGe HBT (fT = 130 GHz, fmax = 90 GHz)

SiGe MODFET (modulation doped FET)(fT = 62 GHz, fmax = 92 GHz)

GaAs MESFET (fT = 160 GHz, fmax = 133 GHz)

III-V HBTs (GaAs, InP) (fT = 250 GHz, fmax = 800 GHz)

HEMTs (GaAs, InP) (fT = 220 GHz, fmax = 600 GHz)

Transistor Technologies

HBTs and HEMTs are the most Promising

Technologies for Data Rates > 40 Gbit/s


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Transistor Technology

Advantages of InP-based HBT Technology

High Speed Capability for Digital and Analog

InP and the Related Materials Provide High Electron Mobilities Potential for Low Power ICs

Compatibility with 1.3 / 1.5 m Lightwave Technology

Co-Integration of Optoelectronic and All-Optical Devices

Relaxed Lithography Requirements for the Fabrication


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10 Gb/s Photoreceiver

Features

InP Heterojunction Bipolar Technology

Monolithic Integration of the Photodiode with the Electronic Circuit

Bandwidth: 8.5 GHz

Transimpedance Gain: 30 k

Conversion Gain: 16.5 kV/W

Sensitivity (min. optical power): -18 dBm (16 W)

Overload (max. optical power): 1 dBm (1.25 mW)

Limiting Outputs: 0.5 Vp-p

Designed by ZMA for Opto Speed AG


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Photodiode

R=0.55 A/W

Transimpedance

AmplifierDifferential

Amplifier

50 Output

Buffer

Out

/OutVref

Block Diagram


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10 Gbit/s Photoreceiver

Cr-Resistor

Photodiode

Block-C

Transistor

Out

Out

1500 m

950 m

Layout


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Mounting Technology

Source: M. Bitter, ETH Zrich

Optical

InputElectrical

Output


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10 Gbit/s Photoreceiver: Fabricated Module(14 pin Butterfly Package)

ElectricalRF-Output

(K-connector)

Optical Fiber

(input)

Power Supply and

Ground Connectors


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Future Design: 40 Gbit/s PhotoreceiverDemonstrator Circuit1)

Total Chip Area: 1.1 x 1.3 mm2

Cr-Resistors (50 /square)

Supply Voltage: 8 V

Power Consumption: 500 mW

Not Packaged

Photodiode

Differential Amplifier

Transimpedance Amplifier

Out /Out

Vref

100m

1) A. Huber et al., Monolithic, High Transimpedance Gain (3.3 k), 40 Gbit/s InP-HBT Photoreceiver with Differential

Outputs, Electronics-Letters. vol. 35, no. 11; May 1999; pp. 897-8


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Results

-20

-15

-10

-5

0

5

10

0.1 1 10 100

Rel.Gain

[dB]

Frequency [GHz]

-3 dB

28 GHz

optical-electrical frequency response eye-diagram @ 40 Gbit/s

Bandwidth: 28 GHz

Transimpedance Gain: 3.3 k

Conversion Gain: 1000 V/W

Differential Outputs

Max. Output Swing: 0.5 Vp-p

12.5ps

Out

250mVp-p

/Out250mVp-p


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Conclusions

Future Transmission Rates of Optical Communication

Systems 5 Tbit/s

Improvements of the All-Optical and Electro/Optical

Components are necessary

Electro/Optical Circuits

10 Gbit/s Commercially Available

40 Gbit/s Demonstrated in Research Laboratories

80 Gbit/s ???

ZMA Successfully Designed a 10 Gbit/s Photoreceiver for

Opto Speed AG using InP-HBT Technology

40 Gbit/s Photoreceivers Planned

HiSpeed Optical Communication

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