High Power Infrared Emitter (850 nm) Version 1.6 SFH 4056

2016-08-10 1

2016-08-10

High Power Infrared Emitter (850 nm)

Version 1.6

SFH 4056

Ordering Information

Features:

• Very small package: (LxWxH) 3.2 mm x 1.6 mm x 1 mm• High optical total power• UL version available ( ordering code & test conditions on request)

Applications

• Miniature photointerrupters• Mobile devices• Proximity sensor• For control and drive circuits

Notes

Depending on the mode of operation, these devices emit highly concentrated non visible infrared light which can be hazardous to the human eye. Products which incorporate these devices have to follow the safety precautions given in IEC 60825-1 and IEC 62471.

Type: Irradiance Radiant intensity Ordering Code

Ee [mW/cm2] Ie, typ [mW/sr]

IF= 70 mA, tp= 20 ms IF=70 mA, tp=20 ms

SFH 4056 6 (≥ 2.5) 35 Q65111A2992

SFH 4056-NP 2.5 ... 8 Q65111A9688

Note: Ie measured with a detector (11.3 mm diameter) in 100 mm distance (Ω = 0.01 sr) to the device surface

Ee measured in the near field with a detector (7.2 mm diameter) in 20 mm distance (Ω = 0.1 sr) to the device

surface

2016-08-10 2

Version 1.6 SFH 4056

Maximum Ratings (TA = 25 °C)

Characteristics (TA = 25 °C)

Parameter Symbol Values Unit

Operation and storage temperature range Top; Tstg -40 ... 85 °C

Reverse voltage VR 5 V

Forward current IF 70 mA

Surge current(tp ≤ 300 µs, D = 0)

IFSM 0.7 A

Power consumption Ptot 140 mW

ESD withstand voltage(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)

VESD 2 kV

Thermal resistance junction - ambient 1) page 13 RthJA 540 K / W

Thermal resistance junction - soldering point 2) page 13

RthJS 360 K / W


Peak wavelength(IF = 70 mA, tp = 20 ms)

(typ) λpeak 860 nm

Centroid wavelength(IF = 70 mA, tp = 20 ms)

(typ) λcentroid 850 nm

Spectral bandwidth at 50% of Imax

(IF = 70 mA, tp = 20 ms)(typ) ∆λ 30 nm

Half angle (typ) ϕ ± 22 °

Dimensions of active chip area (typ) L x W 0.2 x 0.2 mm x mm

Rise and fall time of Ie ( 10% and 90% of Ie max)(IF = 70 mA, RL = 50 Ω)

(typ) tr, tf 12 ns

Forward voltage(IF = 70 mA, tp = 20 ms)

(typ (max)) VF 1.6 (≤ 2) V

Forward voltage(IF = 500 mA, tp = 100 µs)

(typ (max)) VF 2.4 V

Reverse current(VR = 5 V)

IR not designed for reverse operation

µA

Total radiant flux(IF=70 mA, tp=20 ms)

(typ) Φe 40 mW

Radiant intensity(IF=70 mA, tp=20 ms)

Ie, min

Ie, typ

1635

mW/srmW/sr


2016-08-10 3

Grouping (TA = 25 °C)

Temperature coefficient of Ie or Φe

(IF = 70 mA, tp = 20 ms)(typ) TCI -0.5 % / K

Temperature coefficient of VF

(IF = 70 mA, tp = 20 ms)(typ) TCV -0.7 mV / K

Temperature coefficient of wavelength(IF = 70 mA, tp = 20 ms)

(typ) TCλ 0.3 nm / K

Parameter Min Irradiance Max Irradiance

IF= 70 mA, tp= 20 ms IF= 70 mA, tp= 20 ms

Ee, min [mW/cm²] Ee, max [mW/cm²]

SFH 4056 -N 2.5 5

SFH 4056 -P 4 8

SFH 4056 -Q 6.3 12.5

Note: Ee measured in the near field with a detector (7.2 mm diameter) in 20 mm distance (Ω = 0.1 sr) to the device

surface

Only one group in one packing unit (variation lower 2:1).

Relative Spectral Emission 3) page 13

(typ) Irel = f(λ), TA = 25°CIrradiance 3) page 13

Ee/Ee (70mA) = f (IF), Single pulse, tp = 25 μs, TA= 25°C


7000

nm

%

OHF04132

20

40

60

80

100

950750 800 850

Irel

λ

OHF05563

IF

mA10 5 10 5 10 10 3

110

-210

-310

5

10

10

5

-1

5

0

e (70 mA)EE

0 1 2

e

2016-08-10 4


Max. Permissible Forward Current

IF, max = f(TA), RthJA = 540 K/WForward Current 3) page 13

IF = f(VF), single pulse, tp = 100 µs, TA= 25°C

Permissible Pulse Handling Capability

IF = f(tp), TA = 25 °C, duty cycle D = parameterPermissible Pulse Handling Capability

IF = f(tp), TA = 85 °C, duty cycle D = parameter

00

˚CT

IFmA

OHF04264

A

20 40 60 80 100

10

20

30

40

50

60

70

80OHF03826

FI

10-4

0.5 1 1.5 2 2.5 V 3

100

A

0

FV

-110

5

5

10-2

-3

5

10

10100

-2-3-4-5 1010 10

FI APt=D T

210-1 10tp

10 s 10

OHF04265

T

tP

IF

0.1

0.2

0.3

0.4

0.5

0.6

0.8

0.7

0.03

0.20.10.05

0.020.010.005

=D

10.5

10100

-2-3-4-5 1010 10

FI APt=D T

210-1 10tp

10 s 10

OHF04266

T

tP

IF

0.1

0.2

0.3

0.4

0.5

0.6

0.8

0.7

0.03

0.20.10.05

0.020.010.005

=D

10.5


2016-08-10 5

Radiation Characteristics 3) page 13

Irel = f(ϕ), TA= 25°COHF04383

0˚ 20˚ 40˚ 60˚ 80˚ 100˚ 120˚0.40.60.81.0100˚

90˚

80˚

70˚

60˚

50˚

0˚10˚20˚30˚40˚

0

0.2

0.4

0.6

0.8

1.0ϕ

2016-08-10 6


Package Outline

Dimensions in mm.


2016-08-10 7

Pad Description

1 Cathode

2 Anode

Package

Chipled

Approximate Weight:

5.3 mg

Note:

Colour: black

Recommended Solder Pad

Dimensions in mm.

2016-08-10 8


Reflow Soldering Profile

Product complies to MSL Level 3 acc. to JEDEC J-STD-020D.01

00

s

OHA04525

50

100

150

200

250

300

50 100 150 200 250 300

t

T

˚C

St

t

Pt

Tp240 ˚C

217 ˚C

245 ˚C

25 ˚C

L

OHA04612

Profile Feature

Profil-Charakteristik

Ramp-up rate to preheat*)

25 °C to 150 °C2 3 K/s

Time tS TSmin to TSmax

tS

tL

tP

TL

TP

100 12060

10 20 30

80 100

217

2 3

245 260

3 6

Time25 °C to TP

Time within 5 °C of the specified peaktemperature TP - 5 K

Ramp-down rate*TP to 100 °C

All temperatures refer to the center of the package, measured on the top of the component

* slope calculation DT/Dt: Dt max. 5 s; fulfillment for the whole T-range

Ramp-up rate to peak*)

TSmax to TP

Liquidus temperature

Peak temperature

Time above liquidus temperature

Symbol

Symbol

Unit

Einheit

Pb-Free (SnAgCu) Assembly

Minimum MaximumRecommendation

K/s

K/s

s

s

s

s

°C

°C

480


2016-08-10 9

Taping

Dimensions in mm [inch].

Tape and Reel

8 mm tape with 2000 pcs. on ∅ 180 mm reel

D0

2P

P0

1P

WFE

Direction of unreeling

N

W1

2W

A

OHAY0324

Label

Leader:Trailer:

13.0

Direction of unreeling

±0.2

5

min. 160 mm *

min. 400 mm *

*) Dimensions acc. to IEC 60286-3; EIA 481-D

2016-08-10 10


Tape dimensions [mm]Tape dimensions in mm

Reel dimensions [mm]Reel dimensions in mm

Barcode-Product-Label (BPL)

Dry Packing Process and Materials

Note:Moisture-sensitive product is packed in a dry bag containing desiccant and a humidity card.Regarding dry pack you will find further information in the internet. Here you will also find the normative references like JEDEC.

W P0 P1 P2 D0 E F

8 + 0.3 / -0.1 4 ± 0.1 2 ± 0.05or4 ± 0.1

2 ± 0.05 1.5 ± 0.1 1.75 ± 0.1 3.5 ± 0.05

A W Nmin W1 W2max

180 8 60 8.4 + 2 14.4

OHA04563

(G) GROUP:

1234567890(1T) LOT NO: (9D) D/C: 1234

(X) PROD NO: 123456789

(6P) BATCH NO: 1234567890

LX XXXX

RoHS Compliant

BIN1: XX-XX-X-XXX-X

MLX

Temp STXXX °C X

Pack: RXX

DEMY XXX

X_X123_1234.1234 X

9999(Q)QTY:

SemiconductorsOSRAM Opto

XX-XX-X-X

EXAMPLE

X_X123_1234.1234 XX_X123_1234.1234 X

EXAMPLE

EXAMPLE

EXAMPLE

XXXXXX

X_X123_1234.1234 XX_X123_1234.1234 X

XX-XX-X-XXX-XX-X-X

EXAMPLE

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EXAMPLE

EXAMPLE

EXAMPLE

XXXXXX

X_X123_1234.1234 XX_X123_1234.1234 X

XX-XX-X-XXX-XX-X-X

EXAMPLE

Pack: RXX

XXX

X_X123_1234.1234 XX_X123_1234.1234 X

XX-XX-X-X

EXAMPLE

Pack: RXXPack: RXX

DEMY DEMY

EXAMPLE

12341234

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(9D) D/C:(9D) D/C: 12341234

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

12341234

EXAMPLE

Pack: RXXPack: RXX

DEMY

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(9D) D/C:(9D) D/C:

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(9D) D/C: 1234

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(9D) D/C:

EXAMPLE

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12345678901234567890EXAMPLE

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EXAMPLE

EXAMPLE

EXAMPLE

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EXAMPLE

EXAMPLE

(6P) BATCH NO:(6P) BATCH NO: 12345678901234567890

SemiconductorsSemiconductors

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

EXAMPLE

(6P) BATCH NO:(6P) BATCH NO: 12345678901234567890EXAMPLE

SemiconductorsSemiconductorsOSRAM OptoOSRAM Opto

EXAMPLE

EXAMPLE

1234567890

X_X123_1234.1234 X

Pack: RXX

DEMY

X_X123_1234.1234 X

(9D) D/C: 1234(9D) D/C:

1234567890(6P) BATCH NO: 1234567890

OSRAM Opto

XXX

X_X123_1234.1234 X

XX-XX-X-X

Pack: RXX

DEMY

Semiconductors

OHA00539

OSRAM

Moisture-sensitive label or print

Barcode label

Desiccant

Humidity indicator

Barcode label

OSRAM

Please check the HIC immidiately afterbag opening.

Discard if circles overrun.Avoid metal contact.

WET

Do not eat.

Comparatorcheck dot

parts still adequately dry.

examine units, if necessary

examine units, if necessary

5%

15%

10%bake units

bake units

If wet,

change desiccant

If wet,

Humidity IndicatorMIL-I-8835

If wet,

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel


2016-08-10 11

Transportation Packing and Materials

Dimensions of transportation box in mm

Width Length Height

200 ± 5 195 ± 5 30 ± 5

OHA02044

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

PACKVAR:

R077Additional TEXT

P-1+Q-1

Multi TOPLED

Muste

r

OSRAM Opto

Semiconductors

(6P) BATCH NO:

(X) PROD NO:

10

(9D) D/C:

11(1T) LOT NO:

210021998

123GH1234

024 5

(Q)QTY: 2000

0144

(G) GROUP:

260 C RT240 C R

3

220 C R

MLBin3:Bin2: Q

-1-20

Bin1: P-1-20

LSY T6762

2a

Temp ST

R18DEMY

OSRAM

Packing

Sealing label

Barcode label

Mois

ture

Level 3

Flo

or tim

e 168 H

ours

Mois

ture

Level 6

Flo

or tim

e 6

Hours

a) H

umid

ity In

dicato

r C

ard is

> 1

0% w

hen read a

t 23 ˚

C ±

5 ˚C

, or

reflo

w, v

apor-phase r

eflow

, or equiv

alent p

rocessin

g (peak p

ackage

2. Afte

r th

is b

ag is o

pened, devic

es that w

ill b

e subje

cted to

infrare

d

1. Shelf

life in

seale

d bag: 2

4 month

s at <

40 ˚

C a

nd < 9

0% rela

tive h

umid

ity (R

H).

Mois

ture

Level 5

a

at facto

ry c

onditions o

f

(if b

lank, s

eal date

is id

entical w

ith d

ate c

ode).

a) M

ounted w

ithin

b) S

tore

d at

body tem

p.

3. Devic

es require

bakin

g, befo

re m

ounting, i

f:

Bag s

eal date

Mois

ture

Level 1

Mois

ture

Level 2

Mois

ture

Level 2

a4. If b

aking is

require

d,

b) 2a o

r 2b is

not m

et.

Date

and ti

me o

pened:

refe

rence IP

C/J

ED

EC

J-S

TD

-033 fo

r bake p

rocedure

.

Flo

or tim

e see b

elow

If bla

nk, see b

ar code la

bel

Flo

or tim

e > 1

Year

Flo

or tim

e 1

Year

Flo

or tim

e 4

Weeks10%

RH

.

_<

Mois

ture

Level 4

Mois

ture

Level 5

˚C).

OPTO

SEM

ICO

NDUCTORS

MO

ISTURE S

ENSITIV

E

This b

ag conta

ins

CAUTION

Flo

or tim

e 72 H

ours

Flo

or tim

e 48 H

ours

Flo

or tim

e 24 H

ours

30 ˚C

/60%

RH

.

_<

LE

VE

L

If bla

nk, see

bar code la

bel

Barcode label

2016-08-10 12


Disclaimer

Language english will prevail in case of any discrepancies or deviations between the two language wordings.

Attention please!

The information describes the type of component and shall not be considered as assured characteristics.Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. If printed or downloaded, please find the latest version in the Internet.Packing

Please use the recycling operators known to you. We can also help you – get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred.Components used in life-support devices or systems must be expressly authorized for such purpose!

Critical components* may only be used in life-support devices** or systems with the express written approval of OSRAM OS.

*) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or the effectiveness of that device or system.**) Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health and the life of the user may be endangered.


2016-08-10 13

Glossary

1) Thermal resistance: junction -ambient, mounted on PC-board (FR4), padsize 5 mm2 each

2) Thermal resistance: junction - soldering point, of the device only, mounted on an ideal heatsink (e.g. metal block)

3) Typical Values: Due to the special conditions of the manufacturing processes of LED, the typical data or calculated correlations of technical parameters can only reflect statistical figures. These do not necessarily correspond to the actual parameters of each single product, which could differ from the typical data and calculated correlations or the typical characteristic line. If requested, e.g. because of technical improvements, these typ. data will be changed without any further notice.

High Power Infrared Emitter (850 nm) Version 1.6 SFH 4056

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Transcript of High Power Infrared Emitter (850 nm) Version 1.6 SFH 4056