1.History of Protistology. Zacharias Janssen 1580-1638 (together with his father Hans Janssen)
Graphene based metrology JT Janssen National Physical ... · The UK’s national standards...
Transcript of Graphene based metrology JT Janssen National Physical ... · The UK’s national standards...
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Graphene based metrologyJT JanssenNational Physical LaboratoryUK
Workshop “Graphene for future emerging technologies”
Madrid, 18th October 2011
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Outline
Graphene for metrology
Metrology for graphene Underpin and accelerate innovationPromote trade and cooperation
Enhance sensitivityProliferate quantum standardsUnderpin SI units
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About NPL …
The UK’s national standards laboratory
Founded in 1900
World leading National Measurement Institute
450+ specialists in Measurement Science
State-of-the-art laboratory facilities
The heart of the UK’s National Measurement System to support business and society
Experts in Knowledge Transfer
A very successful GOCO
Managed by Serco since 199535 746 m2
388 Laboratories
Purpose built
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A world without measurement ...
Measurement provides structure, removes chaos, reduces waste, ensures open and fair markets, supports precision
when required, and saves lives, money and time
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What do we do
Develop & disseminate UK’s measurement standards, ensure they are internationally acceptedMultidisciplinary R&D and technical services for public and private sectorKnowledge transfer and advice between industry, government and academiaPromotion of science and engineering
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The growing demand for better measurements
Health & safety
Environment
Healthcare
Manufacturing
Communications
TransportEnergy
Science
2% of GDP dependent on a robust measurement system
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Consistency in measurement
Other NMIsNIST, PTB
Demonstrating equivalence –coordinated by BIPM
• Science• Technology• Data• Facilities
• Documentarystandards
• Training• Knowledge
transfer
Other orgs(e.g. BSI, ISO)
Academia& RTOs
Calibrated instrument, agreed procedure, trained practitioner, (verification)
CalibrationLabs
CalibrationLabs
CalibrationLabs
Ensuring traceability
UK NMIs(NPL, NEL, LGC)
Business, Government, Society
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Artefact standards
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Primary quantum standards
Standards which only depend on the fundamental constants of nature
• Independent of time• Can be generated everywhere in the world• Accuracy only limited by our ability to measure
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Present SI system• The kilogram is the unit of mass; it is equal to the mass of
the international prototype of the kilogram
• The ampere is that constant current which, if maintained in two straight parallel conductors of infinite length, of negligible circular cross-section, and placed 1 meter apart in vacuum, would produce between these conductors a force equal to 2 x 10-7 newton per metre of length.
• The kelvin, unit of thermodynamic temperature, is the fraction 1/273.16 of the thermodynamic temperature of the triple point of water.
secondmetrekilogramamperekelvinmolecandela
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The quantum Hall effect
iehRH1
2 ⋅=
Discovered in 1980 by Klaus von Klitzing Nobel Prize in Physics in 1985
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Unconventional quantum Hall effect
( )( )214 2+= Nh
exyσ
Novoselov, et al., Zhang, et al., Nature 438, 2005
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Graphene for metrology
New, easy to use quantum resistance standard
Universality test of the quantum Hall effect
• Material independence• Band structure independence• Re-definition of the SI Units
• Higher T • Lower B• QH Arrays
Electron-electron interactionSpin-orbit coupling
Hyperfine interactionGravity
Should have no effect
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Epitaxial Graphene
Rc ≈ 1 Ωµ ≈ 7000 cm-2V-1s-1
W=35 µmL=160 µm
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Charge transfer between epitaxial graphene and SiC
Kopylov et al., APL97, 1112109 (2010)
( )[ ] gsFgs nnnndeA +=−+− επγ 24
A= 0.40 eVd =0.3 nmγ= 5.04x1012 eV-1cm-2
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Photochemical gating
Lara-Avila et al., Advanced Materials, (2011)
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Unconventional breakdown currentν=2
0 5 10 150
5
10
B(T)
ρ xx,ρ
xy (k
Ω)
0
100
200
300
400
500
I(µ
A)
c
TJBMJ et al., Phys. Rev. B 83, 233402 (2011).
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Universality of the quantum Hall effect
87 parts in 1012 Quantum Hall effect –benchmark of the maturity of the 2DEG technology.Graphene quantum Hall resistance standardInternational comparisonPreviously unattainable precision physical experiments.
NPL and collaborators
TJBMJ et al., New J. Phys. 13, 093026 (2011)
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Other quantum standards based on graphene
Single electron transport
NEMS (Force and mass sensors)
THz detectionNanomagnetism (Hall sensors)
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Metrology for graphene
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ITRS Roadmap
Table ERD8 Research and Technology Development Schedule proposed for Carbon-based Nanoelectronics to impact the Industry's Timetable for Scaling Information Processing Technologie
2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023CMOS Extension Devices Graphene Devices
Doping Control
Graphene Epitaxy
Edge Control of Graphene
Bandgap Control of Graphene
Ohmic contacts
Hi-K Gate dielectric & gate metal
Heterobandgap junction structures
Beyond CMOS Devices Graphene Devices Veselago Electron Lens Pseudospintronics Quantum Interference Quantum Hall Effect Bi-layer structures Other platforms include CNT, NEMS and Molecular ElectronicsThis legend indicates the time during which research, development, and qualification/pre-production should be taking place for the solution.
Research RequiredDevelopment UnderwayQualification / Pre-ProductionContinuous Improvement
Narrow Options
s
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Challenges
Metrology away from the lab into the factory
In-line measurement of relevant parameters• structure • mobility • carrier density• homogeneity•
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Analytical techniques
Layers/defects/interfaces/contacts/devicesUniformity of graphene by functional scanning probe microscopyGraphene/substrate interface chemistry and near-surface impurities by 3D mapping.Results on the local scale correlated with transport (incl. contactless) measurements
NPL/Linköping
T. Burnett, R. Yakimova, O. KazakovaNano Letters, 11, 2324–2328 (2011)
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Surface and interface chemical metrology for graphene based electronic devices
Raman and TERSNumber of layers, defects, edge type
Electronic structure
SIMS:Quantify dopant concentration and impurities
>108 atoms/cm2, 1016 atoms/cm3
Identification of contamination, depth profile
SECMElectrochemical mapping (defects, dopants,
functionalisation)
DopantsNH3, alkali atoms,
N2O, H2O, O2and organic molecules
Contaminationlayer
SubstrateSiC, SiO2, Si, PET, h-BN
Defects
Layers
Impurities
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Quantification
Sputtering yields
Projectiles and energies
0 50 100 150 200 250 300 350 400 450 500
Depth (nm)
(C33
H 46N
3O5- )
Inte
nsity
(arb
uni
ts)
5 keV
10 keV
20 keV
30 keV
O
-N
ON
N
O
CH2
CH2
OH
OH
0 50 100 150 200 250 300 350 400 450 500
Depth (nm)
(C33
H 46N
3O5- )
Inte
nsity
(arb
uni
ts)
5 keV
10 keV
20 keV
30 keV
O
-N
ON
N
O
CH2
CH2
OH
OH
O
-N
ON
N
O
CH2
CH2
OH
OH
0
100
200
300
400
500
600
700
0 2 4 6 8 10Dose, F (1018 ions m-2)
Dep
th, D
(nm
)
5 keV
10 keV
20 keV
30 keV
0
100
200
300
400
500
600
700
0 2 4 6 8 10Dose, F (1018 ions m-2)
Dep
th, D
(nm
)
5 keV
10 keV
20 keV
30 keV
( ) ( )( )FSSFSD DSDS
σσ
−−−
+= ∞∞ exp10
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10
Dose, F (1018 ions m-2)
Rq
(nm
)
30 keV20 keV
10 keV
5 keV
0
5
10
15
20
25
30
35
40
0 2 4 6 8 10
Dose, F (1018 ions m-2)
Rq
(nm
)
30 keV20 keV
10 keV
5 keV
0
0.5
1
1.5
2
2.5
0 100 200 300 400 500
Depth (nm)
Vol
ume
fract
ion
Irgan
ox31
14
X(3114)
QCM
A
B
C
D
E
I(564 u) S -2
I(346 u) S -2
I(26 u) S -1
Rotation and coolingDose (1018 ions m-2)
0 1 2 3 4 5 6
Dose (1018 ions m-2)
Inte
nsity
(564
u)
0 0.5 1 1.5
Dose (1018 ions m-2)
Inte
nsity
(564
u)
Participant L: 10 keV, 45°, -80°C
Participant E: 20 keV, 45°, rotation
b
cP Sjövall et al.,J. Phys. Chem. B, 2010, 114, 769 0
2468
101214161820
A B C D E F G K L M O Q R T
Participant
RS
D (%
)
Repeatabilityand reproducibility
A G Shard et al., Surf. Interface Anal. DOI: 10.1002/sia.3268
Novel ion beamsAr500-1000 clustersJ L S Lee et al., Anal. Chem. 2010, 82, 98
Incidence angle
0 0.5 1 1.5 2 2.5 3 3.5
Inte
nsity
(564
u) Participant S: 20 keV, 76°a
S. Iida et al., e-J. Surf. Sci. Nanotech. 2009, 7, 878AG Shard et al, J Phys Chem B 112 (2008) 2596
A Shard et al, JPC B 112 (2008) 2596
A Shard et al, JPC B 112 (2008) 2596
NPL developed delta layer to study fundamentals of cluster ion beam sputtering
Depth resolution
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Slide courtesy of Wilfried Vandervorst, IMEC
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Electron Spectroscopies for Graphene
Emtsev, PRB 77, 155303 (2008)
Wang, APL 95, 063302 (2009)
Techniques:• XPS, UPS (at NPL)• PEEM, NEXAFS (Diamond)• ARPES (Diamond)
Information:• Quantitative chemical analysis• Work function• Band structure
Si terminated SiC
C terminated SiC
Pacile, PRL 101, 066806 (2008)
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Summary
•We are able to deploy the arsenal of quantum electrical metrology, functional scanning probe microscopy and 3D nano-analysis to support the development and application of graphene electronic devices capable to sustain and extend performance scaling substantially beyond the fundamental limits of conventional technologies.
•There is an opportunity to capitalise on the European lead in graphene, metrology/science to underpin the emerging graphene industry with confidence in the potential of this material.
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Co-workersAlexander Tzalenchuk, Olga Kazakova, Jonathan Williams, Ian Gilmore, Alex Shard, Tim Burnett (NPL)Sergey Kubatkin, Samuel Lara-Avila, Alexei Kalaboukhov, Karin Cedergren (Chalmers)Sara Paolillo (Milan)Mikael Syväjärvi, Rositza Yakimova (Linköping)Sergey Kopylov, Vladimir Fal'ko (Lancaster)Nick Fletcher, Roland Goebel (BIPM)
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Thank You
www.npl.co.uk