Future Test Solution Korea Test Conference September 1, 2015 James J. Ko.
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Future Test Solution Korea Test Conference September 1, 2015 James J. Ko
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Transcript of Future Test Solution Korea Test Conference September 1, 2015 James J. Ko.
Future Test Solution Korea Test Conference September 1, 2015
James J. Ko
Teradyne Proprietary Information2
Semiconductor Innovation Drivers
• Mobile Computing Revolution• Higher Bandwidth/Complexity/Performance• Lower power• Smaller Footprint• Lower cost• “The Internet of Everything”
Teradyne Proprietary Information3
Semiconductor Growth Drivers
Teradyne Proprietary Information4
Semiconductor Innovation challenges
• Shrinking Litho• Greater sensitivity to atomic level
defects• Decrease signal/noise• Increasing complexity• Flat Clock Frequency• High MPU data volume
Teradyne Proprietary Information5
Test technique Progression and Future
a
Teradyne Proprietary Information6
3D-IC Device Market Drivers
Performance
SizeCost3D vs.
Lithography Improvements
Electrical performance• Lower Power• High Speed• Heterogeneous integration
- RF, Logic, Memory, MEMS
Density
Future device testing 3D-ICWhat is Driving this Innovation ?
Teradyne Proprietary Information7
2D vs. 3D Manufacturing Flow
Final Test
Stack/PackageDie 1,2,3
Scrap
3D IC 3 Die Stack
Scrap
StackDie 1 and
Die 2
KGSTest
KGD
KGD
2D IC
AssemblePkg Test
FABWafer Test
Scrap Scrap
Scrap
FabDie 3
Wafer Test
FabDie 1
Scrap
Wafer Test
FabDie 2
Wafer Test
Scrap
Teradyne Proprietary Information8
ATE SLT Into the 3D-IC Manufacturing Flow
SLT Final Test
Stack/PackageDie 1,2,3
Scrap
3D IC 3 Die Stack
Scrap
StackDie 1 and
Die 2
KGSTest
KGD
KGD
Scrap
FabDie 3
SLT Wafer Test
FabDie 1
Scrap
SLT Wafer Test
FabDie 2
SLT Wafer Test
Scrap
Teradyne Proprietary Information9
More Test Challenges
Teradyne Proprietary Information10
Test Innovations and Future Solution?
