Frequency, where we are today, and where we need to go...Rompower Energy Systems, Inc. Ionel Dan...
Transcript of Frequency, where we are today, and where we need to go...Rompower Energy Systems, Inc. Ionel Dan...
Rompower Energy Systems, Inc.
Ionel Dan Jitaru Rompower Energy Systems Inc.
6262 N. Swan Rd., Suite 200 Tucson, Arizona 85718
Frequency, where we are today, and where we need to go
Rompower Energy Systems, Inc.
OUTLINE
● Directions in topologies and operation frequency
● Magnetic limitations at high frequency
● Example of magnetic optimization for high frequency
● Magnetic structures for very high frequency
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TRENDS IN TOLOPOGIES
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TRENDS IN TOPOLOGIES
● ”True” Soft Transition topologies
● Resonant derived topologies
● Future Trends
● Trends in Operation Frequency
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Id
Vds
Id
Vds
Turn On Loss
Switching Losses on the primary switchers
Coss +
Id
CtrPS
CtrS1
CtrS2 CtrP
CtrLAYOUT
The energy contained in the parasitic capacitance of the transformer/layout is quite often higher than
the energy contained in Coss
SiC and GaN technologies will not eliminate the need for Soft Switching
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45W Flyback Transformer for adapters
Intra-Winding 49pF
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750W Transformer for DC-DC Converter
Intra-Winding 157pF
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Vin
M1 M3
M2 M4
Io
Load
Io
t
US Patent 7,187,263B2
Resonant Derived Converter
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D01
Vs
D02
ID01
ID02
TYPICAL WAVEFORM
ID02
Vs
ID01
ID01 (t2) > 0 ID02 (t4) > 0 T2 T3 T4 T0 T1
ID01
VD01
Reverse Recovery Effect in a Double Ended Converter
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D01
Vs
D02
ID01
ID02
ID02
Vs
ID01
ID01 (t2) = 0 ID02 (t4) = 0 T2 T3 T4 T0 T1
ID01
VD01
Current Shaping Effect in a Double Ended Converter
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VdsM1
I(Lo2)
VcM2
VcM1
VcSR1
VcSR2
ISR2
Im
t0 t1 t3 t4 t2
Co SR1
SR2
Lo2
Lo1
LP LS
Vo
C1
C2
M1
M2
Vin
VcM1
VcM2
VcSR1
VcSR2
t0 – t1
HARD SWITCHING HALF BRIDGE TOPOLOGY
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Co SR1
SR2
Lo2
Lo1
LP LS
Vo
C1
C2
M1
M2
Vin
VcM1
VcM2
VcSR1
VcSR2
t1 – t2
HARD SWITCHING HALF BRIDGE TOPOLOGY
VdsM1
I(Lo2)
VcM2
VcM1
VcSR1
VcSR2
ISR2
Im
t0 t1 t3 t4 t2
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Co SR1
SR2
Lo2
Lo1
LP LS
Vo
C1
C2
M1
M2
Vin
VcM1
VcM2
VcSR1
VcSR2
t2 – t3
HARD SWITCHING HALF BRIDGE TOPOLOGY
VdsM1
I(Lo2)
VcM2
VcM1
VcSR1
VcSR2
ISR2
Im
t0 t1 t3 t4 t2
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VcM2
VcM1
VcSR1
VcSR2
ISR2
VdsM1
Im
I(Lo2)
t0 t1 t4 t5 t6 t3 t2
Co SR1
SR2
Lo2
Lo1
LP LS
Vo
C1
C2
M1
M2
Vin
VcM1
VcM2
VcSR1
VcSR2
t0 – t1
SOFT SWITCHING HALF BRIDGE TOPOLOGY
[8]
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Co SR1
SR2
Lo2
Lo1
LP LS
Vo
C1
C2
M1
M2
Vin
VcM1
VcM2
VcSR1
VcSR2
t1 – t2
SOFT SWITCHING HALF BRIDGE TOPOLOGY
VcM2
VcM1
VcSR1
VcSR2
ISR2
VdsM1
Im
I(Lo2)
t0 t1 t4 t5 t6 t3 t2 [8]
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Co SR1
SR2
Lo2
Lo1
LP LS
Vo
C1
C2
M1
M2
Vin
VcM1
VcM2
VcSR1
VcSR2
t2 – t3
SOFT SWITCHING HALF BRIDGE TOPOLOGY
VcM2
VcM1
VcSR1
VcSR2
ISR2
VdsM1
Im
I(Lo2)
t0 t1 t4 t5 t6 t3 t2 [8]
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Co SR1
SR2
Lo2
Lo1
LP LS
Vo
C1
C2
M1
M2
Vin
VcM1
VcM2
VcSR1
VcSR2
t3 – t4
SOFT SWITCHING HALF BRIDGE TOPOLOGY
VcM2
VcM1
VcSR1
VcSR2
ISR2
VdsM1
Im
I(Lo2)
t0 t1 t4 t5 t6 t3 t2 [8]
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Experimental Data
Figure 1: Vin=240V, Iout=15A, Vout=14V Blue is Syncro Drain, Red is Primary Gate, Yellow is Primary
Drain
Figure 2: Vin=345V, Iout=90A, Vout=14V Blue is Syncro Drain, Red is Primary Gate, Yellow is Primary
Drain
Figure 3: Vin=405V, Iout=120A, Vout=14V Blue is Syncro Drain, Red is Primary Gate, Yellow is Primary Drain
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[8]
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● “True” Soft Switching topologies suitable for frequency range from 250Khz to 1Mhz will be the preferred choice
FUTURE TRENDS
Figure 2: Vin=345V, Iout=90A, Vout=14V Blue is Syncro Drain, Red is Primary Gate, Yellow is Primary Drain
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● Resonant topologies such as LLC will maintain popularity due to the “idealization” of the switching devices.
● “True” soft switching topologies through sizing and control have the advantage of simplicity, low cost and in most of applications better efficiency than resonant topologies.
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● In the future the topology may be a Soft Switching Cell operating at Z.V.S at turn on and Z.C.S at turn off. The operating frequency
may be very high in Mhz range.
FUTURE TRENDS…
Quasi-Resonant
Resonant
Multi-Resonant
PFC Vo Vin
● The regulation may be done in train of pulses with a frequency in hundreds of KHz range. The PWM regulation is the same , the
difference is that during the “on” time energy will be delivered at very high frequency.
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PRESENT MAGNETIC LIMITATIONS
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LEAKAGE & STRAY INDUCTANCE
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[5]
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[7]
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[7]
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• THE STRAY INDUCTANCE ASSOCIATED WITH THE AC LOOP, PLAY A VERY IMPORTANT ROLE IN THE CONVERTER PERFORMANCE.
• THE EFFECT OF THE STRAY INDUCTANCE CAN BE STRONGER THAN THE EFFECT OF LEAKAGE INDUCTANCE.
STRAY INDUCTANCE
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n=N1/N2=8:1 Leakage= 0.63uH LStray= 0.0088uH
Lleakage_total= Lleakage + n2 * LStray
Lleakage_total= 1.2uH
THE IMPACT OF THE STRAY INDUCTANCE
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MAGNETIC OPTIMIZATION AND
ELIMINATION OF THE END EFFECTS
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● Significant reduction of the footprint ● Reduction of the magnetic core volume
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1V2/100A HC_QB
[7]
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Winding Termination Effects
B
A A
B
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Winding Termination Effects
Do
Vo
Vo Do
Co
Co
Vo
DC path
Do1
Do2
DC path
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NEW FORM OF DISTRIBUTED MAGNETICS
[3]
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“N” WINDINGS CONCEPT 1/N TURNS
[3]
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NEW FORM OF DISTRIBUTED MAGNETIC
[3]
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ELECTRICAL EQUIVALENCY
Magnetic Distribution Techniques
[9]
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T1
T2
T3
T4
T1
T2
T3
T4
T1
T2
T3
T4
T1
T2
T3
T4
[9]
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T1
T2
T3
T4
T1
T3
T2
T4
T1
T2 T3
T4
[9]
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T1
T2 T3
T4
T1
T2 T3
T4
[9]
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T1
T2 T3
T4 T1
T2
T4
T3
[9]
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VO+
END
D1’
D2’
D1
D2
[9]
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VO+
END
D1’
D2’
D1
D2
GND
[9]
GND
GND
A NOVEL FORM OF DISTRIBUTED MAGNETIC
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MAGNETIC STRUCTURES FOR
HIGHER FREQUENCIES
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Vin
Vin
2Np
Vin
2Np
Vin
Vin
2Np Vin
2Np
Vin
2Np
Vin
Vin
2Np
Vin
2Np
Vin
Magnetic Structures for High Efficiency
Vin
Vin
2Np
Vin
2Np
[1]
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Vin
Vin
2Np
Vin
2Np
Vin
Vin
Vin
Vin
Vin
2Np
Vin
2Np
Magnetic Structures for High Efficiency
[1]
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Printed Circuit Transformer
Primary Winding
Bottom Core Pieces
9 Secondary Windings
Top Core Pieces
[14]
[1]
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Rac/Rdc Characteristics 56
1MHz 10MHz Case K[%] P Ac/Dc S Ac/Dc P Ac/Dc S Ac/Dc 1 Plates &
Posts 99.9 2.26 3.26 3.75 4.54 2 No Core 54.8 2.2 2.63 3.58 3.57 3 Center
Posts 72.9 1.72 1.93 3.05 2.61
2.26 2.2 1.72
3.75 3.58 3.05
0123456789
0 1 2 3 4
Primary Ac/Dc ratio
1MHz
10MHz
3.26
2.63
1.93
4.54
3.57
2.61
00.5
11.5
22.5
33.5
44.5
5
0 1 2 3 4
Secondary Ac/Dc ratio
1MHz
10MHz
1
2
3
[9]
Magnetic Structures for Very High Frequency
MULTI-LEGGED MAGNETIC STRUCTURE
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● The main target is efficiency and smaller size which may lead to lower cost.
CONCLUSION
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● Reduction of number of turns towards one turn secondary.
● For efficiency and size minimization present “true” soft switching topologies operate between 300KHz towards 1MHz with new semiconductor technologies.
● The new semiconductor technologies allows operation above 5Mhz but it may require high efficiency air core magnetic structures.
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Rompower Energy Systems, Inc.
References
[1] PatrizioVinciarelli “ Printed Circuit Transformer” US Patent # 7,187,263 B2 [2] Jiankun Hu, C.R. Sullivan “AC Resistance of Planar Power Inductors and the Quasidistributed Gap Technique” IEEE Transactions on Power Electronics, Vol 16,no 4,pp.558-567. [3] Ionel Dan Jitaru “Low Profile Magnetic Element”" US Patent # 7,295,094 B2 [4] Ionel Dan Jitaru “Planar Inductive Element”" US Patent # 6,967,553 B2 [5] E.C. Snelling, “Soft Ferrites,Properties and Applications" pp.335-338 [7] Ionel Dan Jitaru "Low Noise Full-Integrated Multilayer Magnetic for Power Converters" US Patent 5,990,776 [8] Ionel Jitaru “ Soft Switching Converter by Steering the Magnetizing Current” US Patent Pending [9] Ionel Jitaru “Magnetic Structures for Low Leakage Inductance for Low Leakage Inductance and Very High Efficiency” US Patent Pending” US Patent Pending
Some of the technologies presented in this seminar may be the subject of patent applications, please contact Rompower Energy Systems for further details.