Fqa6n70700v N-channel Mosfet

7/28/2019 Fqa6n70700v N-channel Mosfet

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2000 Fairchild Semiconductor International

December 2000

Rev. A2, December 2000

FQA6N70QFETQFETQFETQFET

TM

FQA6N70700V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchilds proprietary,

planar stripe, DMOS technology.

This advanced technology is especially tailored to minimize

on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation modes. These devices are

well suited for high efficiency switch mode power supply.

Features

6.4A, 700V, RDS(on) = 1.5 @ VGS = 10 V

Low gate charge ( typical 30 nC)

Low Crss ( typical 15 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

Absolute Maximum Ratings TC = 25C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQA6N70 Units

VDSS Drain-Source Voltage 700 VID Drain Current - Continuous (TC = 25C) 6.4 A

- Continuous (TC = 100C) 4.05 A

IDM Drain Current - Pulsed (Note 1) 25.6 A

VGSS Gate-Source Voltage 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 600 mJ

IAR Avalanche Current (Note 1) 6.4 A

EAR Repetitive Avalanche Energy (Note 1) 15.2 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PD Power Dissipation (TC = 25C) 152 W

- Derate above 25C 1.22 W/C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 C

TL

Maximum lead temperature for soldering purposes,

1/8 from case for 5 seconds 300 C

Symbol Parameter Typ Max Units

RJC Thermal Resistance, Junction-to-Case -- 0.82 C/W

RCS Thermal Resistance, Case-to-Sink 0.24 -- C/W

RJA Thermal Resistance, Junction-to-Ambient -- 40 C/W

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S

D

G

TO-3PFQA Series

G SD


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FQA6N70

(Note 4)

(Note 4, 5)

(Note 4, 5)

(Note 4)


Electrical Characteristics TC = 25C unless otherwise noted

Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature2. L = 27.2mH, IAS = 6.4A, VDD = 50V, RG = 25 ,Starting TJ = 25C3. ISD 6.2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C

4. Pulse Test : Pulse width 300s, Duty cycle 2%5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 700 -- -- V

BVDSS

/ TJBreakdown Voltage TemperatureCoefficient ID = 250 A, Referenced to 25C -- 0.78 -- V/C

IDSSZero Gate Voltage Drain Current

VDS = 700 V, VGS = 0 V -- -- 10 A

VDS = 560 V, TC = 125C -- -- 100 A

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On CharacteristicsVGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-ResistanceVGS = 10 V, ID = 3.2 A -- 1.16 1.5

gFS Forward Transconductance VDS = 50 V, ID = 3.2 A -- 6.4 -- S

Dynamic CharacteristicsCiss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 1100 1400 pF

Coss Output Capacitance -- 125 150 pF

Crss Reverse Transfer Capacitance -- 15 120 pF

Switching Characteristicstd(on) Turn-On Delay Time VDD = 350 V, ID = 6.2 A,

RG = 25

-- 25 60 ns

tr Turn-On Rise Time -- 70 150 ns

td(off) Turn-Off Delay Time -- 55 120 ns

tf Turn-Off Fall Time -- 50 110 ns

Qg Total Gate Charge VDS = 560 V, ID = 6.2 A,

VGS = 10 V

-- 30 40 nC

Qgs Gate-Source Charge -- 6.5 -- nC

Qgd Gate-Drain Charge -- 13 -- nC

Drain-Source Diode Characteristics and Maximum RatingsIS Maximum Continuous Drain-Source Diode Forward Current -- -- 6.4 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 25.6 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6.4 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 6.2 A,

dIF / dt = 100 A/s

-- 340 -- ns

Qrr Reverse Recovery Charge -- 2.7 -- C


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FQA6N70


0.2 0.4 0.6 0.8 1.0 1.2 1.410

-1

100

101

25150

Notes :1. V

GS=0V

2. 250s Pulse Test

IDR,

ReverseDrainCurrent[A]

VSD

, Source-Drain Voltage [V]

2 4 6 8 1010

-1

100

10

1

Notes :1. V

DS= 50V

2. 250s Pulse Test

-55

150

25

ID,DrainCurrent[A]

VGS

, Gate-Source Voltage [V]10

-110

010

1

10-1

100

101

VGS

Top : 15.0 V10.0 V8.0 V

7.0 V6.5 V6.0 V

Bottom: 5.5 V

Notes :1. 250s Pulse Test2. T

C= 25

ID,DrainCurrent[A]

VDS

, Drain-Source Voltage [V]

0 5 10 15 20 25 300

2

4

6

8

10

12

VDS

= 350V

VDS

= 140V

VDS

= 560V

Note : ID

= 6.2 A

VGS,Gate-SourceVoltage[V]

QG, Total Gate Charge [nC]

10-1

100

101

0

400

800

1200

1600

2000C

iss= C

gs+ C

gd(C

ds= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

Notes :

1. VGS= 0 V2. f = 1 MHzCrss

Coss

Ciss

Capacitance[pF]

VDS

, Drain-Source Voltage [V]

0 4 8 12 16 200

1

2

3

4

VGS

= 20V

VGS

= 10V

Note : TJ= 25

RDS(ON)[

],

Drain-SourceOn-Resistance

ID, Drain Current [A]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current and

Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics


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FQA6N70


25 50 75 100 125 1500

1

2

3

4

5

6

7

ID,DrainCurrent[A]

TC, Case Temperature []

100

101

102

103

10-2

10-1

100

101

102

10s

DC

10 ms

1 ms

100s

Operation in This Area

is Limited by RDS(on)

Notes :

1. TC

= 25oC

2. TJ= 150

oC

3. Single Pulse

ID,DrainCurrent[A]

VDS, Drain-Source Voltage [V]

1 0-5

1 0-4

1 0-3

1 0-2

1 0-1

1 00

1 01

1 0-2

1 0-1

1 00

N o t e s :

1 . Z JC

( t ) = 0 . 8 2 / W M a x .

2 . D u t y F a c t o r , D = t1/t

2

3 . TJM

- TC

= PDM

* Z JC

(t )

s i n g l e p u l s e

D = 0 . 5

0 . 0 2

0 .2

0 . 0 5

0 . 1

0 . 0 1

Z

JC(t)

,Therm

alR

esponse

t1, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

-100 -50 0 50 100 150 2000.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :1. V

GS= 10 V

2. ID

= 3.1 A

RDS(ON),(Normalized)

Drain-SourceOn-Resistance

TJ, Junction Temperature [

oC]

-100 -50 0 50 100 150 2000.8

0.9

1.0

1.1

1.2

Notes :1. V

GS=0V

2. ID=250A

BVDSS,(Normalized)

Drain-SourceBreakdownVoltage

TJ, Junction Temperature [

oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

t1

PDM

t2


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FQA6N70


Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

Charge

VGS

10V

Qg

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K

200nF12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

VGS

VDS

10%

90%

td(on)

tr

t on t off

td(off) t

f

VDD

10V

VDSRL

DUT

RG

VGS

EAS = L IAS2----

2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

L

I D

tp

EAS = L IAS2----

2

1EAS = L IAS

2----2

1----2

1--------------------

BVDSS - VDD

BVDSS

VDD

VDS

BVDSS

tp

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

RG

LL

I DI D

tp


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FQA6N70


Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

L

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------

DUT

VDS

+

_

Driver

RG

Same Typeas DUT

VGS dv/dt controlled by RG ISD controlled by pulse period

VDD

LL

I SD

10VVGS

( Driver )

I SD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D =Gate Pulse Width

Gate Pulse Period--------------------------D =Gate Pulse Width

Gate Pulse Period--------------------------


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FQA6N70


Package Dimensions

15.60 0.20

4.80 0.2013.60 0.20

9.60 0.20

2.00 0.20

3.00 0.20

1.00 0.20 1.40 0.20

3.20 0.10

3.

80

0.

20

13.

90

0.

20

3.

50

0.

20

16.

50

0.

30

12.

76

0.

20

19.

90

0.

20

23.

40

0.

20

18.

70

0.

20

1.50+0.150.05

0.60+0.150.05

5.45TYP

[5.45 0.30]

5.45TYP

[5.45 0.30]

TO-3P


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2000 Fairchild Semiconductor International Rev. A, January 2000

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not intended to be an exhaustive list of all such trademarks.

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CROSSVOLT

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POP

PowerTrench

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QS

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VCX

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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

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PRODUCT STATUS DEFINITIONS

Definition of Terms

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Advance Information Formative or In

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.

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changes at any time without notice in order to improve

design.

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Fqa6n70700v N-channel Mosfet

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