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Background Statement for SEMI Draft Document 3847DRevision to SEMI E33-94, SPECIFICATION FOR SEMICONDUCTOR MANUFACTURING FACILITY ELECTROMAGNETIC COMPATIBILITYWith title change to: GUIDE FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT ELECTROMAGNETIC COMPATIBILITY (EMC)NOTICE: This background statement is not part of the balloted item. It is provided solely to assist the recipient in reaching an informed decision based on the rationale of the activity that preceded the creation of this Document.

NOTICE: Recipients of this Document are invited to submit, with their comments, notification of any relevant patented technology or copyrighted items of which they are aware and to provide supporting documentation. In this context, ‘patented technology’ is defined as technology for which a patent has issued or has been applied for. In the latter case, only publicly available information on the contents of the patent application is to be provided.

Background StatementEfficient and profitable manufacturing of semiconductor and other related products (e.g., hard disk drives [HDDs], flat panel displays [FPDs], microelectromechanical systems [MEMS]) depends on the proper operation of a large number of diverse types of manufacturing equipment in as small a space as will reasonably contain them. The complexity of the manufacturing equipment and its interconnections with power sources, data pathways, and other equipment in the factory make it susceptible to operating errors due to electromagnetic interference (EMI). The purpose of this Guide is to assure that these manufacturing facilities and manufacturing equipment used for manufacturing semiconductor devices will operate together reliably without failures caused by EMI. This goal is generally known as “electromagnetic compatibility” or EMC.

SEMI Standard E33-94 describes recommendations for electromagnetic compliance of semiconductor manufacturing equipment. This document offers recommended minimum acceptable electromagnetic performance of semiconductor manufacturing equipment in order to help assure availability of semiconductor manufacturing equipment in the semiconductor process. This document is overdue for its 5-year review and is in need of technical revisions and additions. Semiconductor manufacturing equipment complexity and process requirements have increased dramatically since the document was issued. New EMC standards have also appeared since then.

SEMI Draft Document 3847D achieves the following objectives:1) Reviews, updates, and reissues the information contained in SEMI E33.2) Harmonizes SEMI E33 with existing international standards for EMC that have been issued.3) Adds explanatory material and recommendations.4) Addresses the negatives and comments to the prior ballot 3847C.

1: This Standard is being revised in its entirety.2: This Standard includes both Appendices, which are official parts of the Standard, and Related Information sections, which like Notes are not official parts of the Standard. Related Information sections and Notes provide supplementary information that is not required to carry out or use the Standard, but may be useful.

Review and Adjudication Information

Task Force Review Committee AdjudicationGroup: EMC Task Force NA Metrics Technical CommitteeDate: July 09, 2012 July 11, 2012Time & Time Zone: 1330-1630 PST 1330-1800 PSTLocation: SEMICON West 2012 at the San Francisco

Marriott Marquis HotelSEMICON West 2012 at the San Francisco Marriott Marquis Hotel

City, State/Country: San Francisco, California San Francisco, CaliforniaLeader(s): Vladimir Kraz (BestESD Technical Services,

[email protected])Mark Frankfurth (Cymer, [email protected])

David Bouldin (Fab Consulting)Mark Frankfurth (Cymer)

Standards Staff: Michael Tran (SEMI NA)[email protected]

Michael Tran (SEMI NA)[email protected]

This meeting’s details are subject to change, and additional review sessions may be scheduled if necessary. Contact the task force leaders or Standards staff for confirmation.

Telephone and web information will be distributed to interested parties as the meeting date approaches. If you will not be able to attend these meetings in person but would like to participate by telephone/web, please contact Standards staff.

DRAFTDocument Number:

Date: 5/7/23

SEMI Draft Document 3847DRevision to SEMI E33-94, SPECIFICATION FOR SEMICONDUCTOR MANUFACTURING FACILITY ELECTROMAGNETIC COMPATIBILITYWith title change to: GUIDE FOR SEMICONDUCTOR MANUFACTURING EQUIPMENT ELECTROMAGNETIC COMPATIBILITY (EMC)1 Purpose1.1 The purpose of this Guide is make recommendations to help assure that manufacturing equipment used for manufacturing semiconductor devices will operate reliably without failures caused by electromagnetic interference (EMI). This desired characteristic is generally known as electromagnetic compatibility (EMC).

2 Scope2.1 This Guide applies to equipment constructed for the purpose of manufacturing semiconductor devices. Equipment types include communications equipment, control equipment, processing equipment, metrology equipment, inspection equipment, automation equipment, and information technology equipment. Some terms are specialized to semiconductor facilities and equipment.2.2 The primary focus of this Guide is semiconductor manufacturing equipment used for manufacturing semiconductor devices, but this Guide may also be applied to the equipment used for manufacturing related products (e.g., flat panel displays [FPDs], microelectromechanical systems [MEMS]).

NOTICE: SEMI Standards and Safety Guidelines do not purport to address all safety issues associated with their use. It is the responsibility of the users of the Documents to establish appropriate safety and health practices and determine the applicability of regulatory or other limitations prior to use.

1: Under certain conditions, sensitivity to EMI or the lack of EMC can impact equipment safety.

3 Limitations3.1 This Guide does not apply to the equipment used for the assembly and functional testing of integrated circuits. 2: The task force plans to consider equipment used for such assembly and testing once the acceptable limits and methodology are defined.3.2 This Guide does not apply to EMI caused by electrostatic discharges (ESDs) from process-specific charging that may occur to semiconductor devices in manufacturing processes. Refer to SEMI E78 for more information.

4 Referenced Standards and Documents 4.1 SEMI Standards

SEMI E78 — Guide to Assess and Control Electrostatic Discharge (ESD) and Electrostatic Attraction (ESA) for Equipment

SEMI F47 — Specification for Semiconductor Processing Equipment Voltage Sag Immunity

4.2 European Commission (EC) Regulations/Directives/Standards1

Directive 2004/108/EC — Directive 2004/108/EC of the European Parliament and of the Council on the Approximation of the Laws of the Member States Relating to Electromagnetic Compatibility and Repealing Directive 89/336/EEC

4.3 IEEE Standards2

IEEE 1100 — IEEE Recommended Practice for Powering and Grounding Electronic Equipment3: See Related Information 3 for a subset list of guidance standards, regulations, and directives.

1 European Commission: Rue de la Loi 200/Wetstraat 200, B-1049 Bruxelles/Brussels, Belgium. Telephone: 32.2.299.30.85; Fax: 32.2.296.17.49. http://www.europa.eu.int2 Institute of Electrical and Electronics Engineers, IEEE Operations Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, New Jersey 08855-1331, USA. Telephone: 732.981.0060; Fax: 732.981.1721; http://www.ieee.org

This is a Draft Document of the SEMI International Standards program. No material on this page is to be construed as an official or adopted Standard or Safety Guideline. Permission is granted to reproduce and/or distribute this document, in whole or in part, only within the scope of SEMI International Standards committee (document development) activity. All other reproduction and/or distribution without the prior written consent of SEMI is prohibited.

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Semiconductor Equipment and Materials International3081 Zanker RoadSan Jose, CA 95134-2127Phone: 408.943.6900, Fax: 408.943.7943

http://www.ieee.org/

http://www.europa.eu.int/


Date: 5/7/23

NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.

5 Terminology5.1 Abbreviations and Acronyms5.1.1 CEN — European Committee for Standardization5.1.2 CFR — Code of Federal Regulations5.1.3 CISPR — International Special Committee on Radio Interference5.1.4 ELF — extremely low frequency5.1.5 EMC — electromagnetic compatibility5.1.6 EMF — electromagnetic field5.1.7 EMI — electromagnetic interference5.1.8 EMO — emergency off5.1.9 EN — European Standard5.1.10 ESD — electrostatic discharge5.1.11 EUT — equipment under test5.1.12 FCC — Federal Communications Commission5.1.13 FIB — focused ion beam5.1.14 FPD — flat panel display5.1.15 IEC — International Electrotechnical Commission5.1.16 IEEE — Institute of Electrical and Electronics Engineers5.1.17 MEMS — microelectromechanical systems

5.1.18 OEM — original equipment manufacturer

5.1.19 [5.1.18 ] RMS — root mean square5.1.20 [5.1.19 ] SEM — scanning electron microscope5.1.21 [5.1.20 ] TEM — transmission electron microscope5.1.22 [5.1.21 ] VLF — very low frequency5.2 Definitions5.2.1 electromagnetic compatibility (EMC) — the ability of electronic equipment to function properly with respect to environmental electromagnetic interference (EMI).

[5.2.2 ] electromagnetic interference (EMI) — the degradation of the performance of an equipment, transmission channel, or system caused by an electromagnetic disturbance.any electrical signal in the nonionizing portion of the electromagnetic spectrum with the potential to cause an undesired response in electronic equipment.

5.2.2 [5.2.3 ] electrostatic discharge (ESD) — the rapid spontaneous transfer of electrostatic charge induced by a high electrostatic field. [SEMI E78] 5.2.3 [5.2.4 ] ELF-sensitive equipment — any equipment, such as a scanning electron microscope (SEM), with performance that is adversely affected by extremely low frequency (ELF) electromagnetic fields (EMFs).5.2.4 [5.2.5 ] EMI event — an occurrence of electromagnetic interference (EMI) that may also include electromagnetic emission from electrostatic discharge (ESD) events.5.2.5 [5.2.6 ] EMI-sensitive equipment — any equipment with performance that is adversely affected by electromagnetic interference (EMI) present in the semiconductor manufacturing environment.5.2.6 [5.2.7 ] enclosure — the physical boundary of the equipment through which electromagnetic fields (EMFs) may radiate or impinge.5.2.7 [5.2.8 ] ESD event — an occurrence of electrostatic discharge (ESD) that can cause an electromagnetic emission.5.2.8 [5.2.9 ] ESD Audit — an internal or external verification of some or all provisions in electrostatic discharge (ESD) control programs and related standards.


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Enclosure

AC power port

DC power port

Ground port

Signal port

Process measurement port


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5.2.9 [5.2.10 ] extremely low frequency (ELF) — the spectrum range less than 3 kHz.5.2.10 [5.2.11 ] extremely low frequency (ELF) electromagnetic field (EMF) — an electromagnetic field (EMF) generated by extremely low frequency (ELF) current flow (most commonly at 60 Hz in the U.S., parts of Japan, and Taiwan and at 50 Hz in most of Asia and in Europe) within equipment and facilities.5.2.11 [5.2.12 ] port — a particular interface (e.g., ground port) of the specified equipment with the external electromagnetic environment (see Figure 1).

Figure 1Equipment Ports

[5.2.13 ] supplier — provider of equipment and related services to the user (e.g., unit manufacturer). Also called equipment vendor or original equipment manufacturer (OEM). [SEMI E10]party that provides equipment to, and directly communicates with, the user (see also the definition for user). A supplier may be a manufacturer, equipment distributor, or equipment representative. [5.2.14 ] user — party that acquires equipment for the purpose of using it to manufacture semiconductors. See also the definition for supplier. [SEMI S2] party that acquires equipment for the purpose of manufacturing semiconductors. 5.2.12 [5.2.15 ] very low frequency (VLF) — the spectrum range from 3 kHz to 30 kHz.

6 Recommended Performance Criteria Classification6.1 Recommended Performance Criteria — The following are recommended generic performance criteria for the various classes of equipment and electronic systems used in semiconductor manufacturing. Any kind of failure or aberration during EMC testing should be recorded in the test report.6.1.1 Performance Criteria A — The semiconductor manufacturing equipment operates as intended during and after the test. In the case of process equipment, all process results are within specifications. No observable increase in risk attributed to EMI or false alarms. In some cases, the performance level may be replaced by a documented permissible loss of performance if such loss is deemed minor and agreeable to the concerned parties.6.1.2 Performance Criteria B — The semiconductor manufacturing equipment operates as intended after the test, but experiences a loss of function or degradation of performance during the test to a level specified by the supplier. No change of operating state or loss of stored data is allowed. Restoration of performance or function does not require human intervention. 4: If the temporary loss of function can create a safety hazard, the appropriate Safety Guidelines or Standards should be used to evaluate the risk.6.1.3 Performance Criteria C — Temporary loss of function is allowed, provided the function is recoverable, either automatically or through operation of the controls. 5: If the temporary loss of function can create a safety hazard, the appropriate Safety Guidelines or Standards should be used to evaluate the risk.

7 Semiconductor Manufacturing Equipment Compliance Recommendations7.1 Conformance to the requirements of applicable EMC-related regulations (e.g., codes, directives) in the location where semiconductor manufacturing equipment is to be used should be independent of and may supercede this Guide and any agreements between the supplier and the user. Considerations beyond regulatory requirements should be negotiated between the supplier and the user.


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7.2 Conformance to the requirements of the EMC Directive 2004/108/EC is the recommended performance level of the equipment and represents the minimum expectation for meeting the recommendations in this Guide.. 7.3 [7.2 ] If additional equipment performance characteristics beyond the requirements of the EMC Directive (such as those listed below) are desired, they should be negotiated between the supplier and the user. Performance criteria defined in § 6 Extremely low frequency (ELF) electromagnetic field (EMF) strength level and testing defined in Appendix 1 Conformance to the voltage sag immunity requirements defined in SEMI F47

8 Semiconductor Manufacturing Equipment Compliance Responsibility Recommendations[8.1 ] Government Regulations — Complying with applicable EMC-related regulations (e.g., codes, directives) in the location where semiconductor manufacturing equipment is to be used is independent of and may supercede this Guide and any agreements between the supplier and the user. Considerations beyond regulatory requirements should be negotiated between the supplier and the user. [8.2 ] Alternate Locations — If semiconductor manufacturing equipment is purchased for use at one location and is compliant with EMC-related standards, rules, and regulations for that location, but is used in another location with different EMC-related standards, rules, and regulations, compliance with the latter should not be the responsibility of the manufacturer of that equipment. ‘Compliance with the applicable EMC-related regulations of the original use location is the responsibility of the equipment supplier. Regulatory guidance and negotiation between the supplier and the user are recommended for compliance of equipment relocated to alternate locations.’ 6: One example includes when a supplier in good faith sold equipment for use in a certain location with its own regulatory requirements, however the customer or a distributor has rerouted the equipment to a different location with different regulatory requirements. Another example is the case of the sale of used equipment by a party that is not the original manufacturer of that equipment. In such cases, the manufacturer should not be held responsible for retrofitting the equipment to meet new regulatory requirements that were not included at the time of the original sale. [8.3 ] Semiconductor Manufacturing Equipment EMI Protection Deviations — If the user operates semiconductor manufacturing equipment in a configuration different from the manufacturer’s instructions (e.g., operates equipment with service access covers removed, orcable bundles exposed), the user may compromise the equipment’s EMC. Additional protection measures or test requirements should be provided for electromagnetic compliance, as agreed between the equipment supplier and the user.8.1 [8.4 ] Recommended Semiconductor Manufacturing Equipment Compliance Assignments — Table 1 is provided to assist in defining EMC compliance roles and responsibilities. Unless there are contractual agreements to the contrary, the responsibilities defined in Table 1 should be followed.

Table 1 Recommended EMC-Related Compliance Assignments

Item Responsibility

Semiconductor manufacturing equipment itself Supplier (semiconductor manufacturing equipment manufacturer)

Semiconductor manufacturing equipment in combination with other equipment if supplied (i.e., integrated) by one supplier

Supplier (semiconductor manufacturing equipment integrator)

Semiconductor manufacturing equipment in combination with other equipment if integrated by the user

User

Facility-level electromagnetic environment# 1 User

Semiconductor manufacturing equipment installation-related compliance and EMI-performance

Party responsible for installation

Semiconductor manufacturing equipment collocation User

Semiconductor manufacturing equipment after repair or maintenance

Party responsible for repair or maintenance

Post-sale additions or modifications made by the supplier that affect EMC compliance

Supplier (semiconductor manufacturing equipment manufacturer or integrator)


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Item Responsibility

Post-sale additions or modifications made by the user that affect EMC compliance

User

#1: Refer to R4-1.4 for guidance on facility-level EMI environment.

8.2 [8.5 ] Facility-Level Electromagnetic Environment — Although the scope of this Guide is semiconductor manufacturing equipment, electromagnetic performance includes the facility in which the equipment is installed. The facility and electrical interface are equally important to successful equipment EMC. Information in this Guide may be used by suppliers to guide users in establishing a compatible electromagnetic environment for equipment and processes. 7: See Related Information 4 for further details on electromagnetic environments on a facility level.8.3 [8.6 ] ESD-Related Electromagnetic Environment — Electromagnetic emission can be generated also by ESD events within or nearby the semiconductor manufacturing equipment or in combination with integrated equipment. ESD generates an EMF with a characteristic signature. Refer to SEMI E78 for more information on controlling these ESD events.

9 Test Method Recommendations9.1 Applicable Standards — Semiconductor manufacturing equipment should be evaluated per the relevant requirements in applicable regulations, standards, and directives as well as to the requirements that are agreed by the supplier and the user.8: A subset list of potentially relevant EMC-related standards, regulations, and directives is provided in Related Information 3. Both suppliers and users are encouraged to check periodically for and use updates to the relevant guidance documents. [9.1.1 ] The minimum EMC testing conformance to this Guide is compliance with the requirements of the EMC Directive 2004/108/EC. [9.2 ] Recommended Conditions During Testing9.1.1 [9.2.1 ] EMC testing should be performed with the semiconductor manufacturing equipment fully installed and operational if doing so is practical and reasonable.9.1.2 [9.2.2 ] The test configuration should be according to the supplier installation, operation, maintenance, and service requirements and should represent a realistic operating environment. 9.1.3 [9.2.3 ] Substitutes may be used for hazardous gases and chemicals and other modifications may be made as deemed reasonable to ensure testing can be performed in a reduced-risk and environmentally acceptable manner. 9.1.4 [9.2.4 ] Special EMC facilities should not be required by this Guide. Knowledge of EMC testing and equipment characteristics should guide compliance approach: analysis vs. lab test or in situ testing. 9.2 [9.3 ] Optional Alternative Testing

[9.3.1 ] Testing completed using different, but ‘substantially similar’ (as agreed by the supplier and the user), methods may be substituted for the test methods recommended in this Guide if the performance criteria and test levels are similar.

9.2.1.1 [9.3.1.1 ] The assessor should note such substitutions in the test plan and report.

10 Semiconductor Manufacturing Equipment Installation and Grounding Recommendations10.1 Special installation, power, and grounding requirements necessary to meet this Guide should be thoroughly documented by the supplier. 9: IEEE STD 1100 (IEEE Emerald Book) is a suggested source of information for recommended practices in this area.10.2 Suppliers and users should be aware of the importance of reference grounding in the control of EMI. Absent or ineffective semiconductor manufacturing equipment grounding may cause semiconductor manufacturing equipment malfunction.10.2.1 It is recommended that the supplier or the user conduct the EMI ground audit portion of an EMI Audit (see Appendix 2) on the semiconductor manufacturing equipment ground (i.e., ground port) prior to installation of EMI-sensitive semiconductor manufacturing equipment and after installation of all equipment.


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11 Documentation Recommendations11.1 A nonproprietary test method and report should be available to the user upon request by the user. 10: Proprietary test methods and reports may require nondisclosure agreements between a user and a supplier.


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APPENDIX 1EXTREMELY LOW FREQUENCY (ELF) AND VERY LOW FREQUENCY (VLF) ELECTROMAGNETIC INTERFERENCE (EMI) NOTICE: The material in this appendix is an official part of SEMI E33 and was approved by full letter ballot procedures on [insert date of approval by responsible regional standards committee].

A1-1 BackgroundA1-1.1 Some semiconductor manufacturing equipment and processes may be sensitive to EMI caused by ELF and VLF EMFs. A1-1.1.1 Examples of the sources of such ELF and VLF EMFs are the currents in the power mains, moving ferromagnetic metal objects (e.g., nearby trains, trucks, elevators, metal chairs), contact-less power transmission, and electronic equipment.A1-1.1.2 Examples of semiconductor manufacturing equipment susceptible to EMI caused by ELF and VLF EMFs (i.e., ELF- and VLF-sensitive semiconductor manufacturing equipment) are electron beam–based equipment (e.g., a scanning electron microscope [SEM], a transmission electron microscope [TEM], a focused ion beam [FIB]) and equipment with sensors.A1-1.2 ELF EMFs have a frequency below 3 kHz. VLF EMFs have a frequency in the range of 3 to 30 kHz.A1-1.3 In many cases, ELF EMI sensitivity is especially high due to the changes in the ELF EMF, not just to the absolute magnitude of the ELF EMF. Rapid changes in the ELF EMF are known to cause more EMI disturbance than slow changes.11:[10:] Generally, sensitivity to magnetic fields increases with frequency and the effectiveness of magnetic shielding also increases with frequency. A1-1.4 Very small (as small as a fraction of a Gauss) changes in the ELF and VLF EMF may affect operation of electron beam–based equipment. As a reference, the Earth’s ELF EMF is approximately 60 µT (600 mG).

A1-2 ELF and VLF EMI Test Method RecommendationA1-2.1 Summary — The user should perform an ELF EMF Audit prior to installing semiconductor manufacturing equipment to determine if the areas are compatible with the equipment’s immunity limits to prevent having to relocate equipment due to interference generated by the facility infrastructure or other equipment. The user should perform an ELF EMF Audit after installing semiconductor manufacturing equipment to determine if the areas are still compatible with the semiconductor manufacturing equipment EMI immunity limits and that the equipment itself is not generating ELF EMFs to prevent interference with other nearby ELF-sensitive equipment. The following ELF EMI test method is recommended as part of a mitigation program to manage the influence of ELF EMFs on the process and the equipment. A1-2.2 Recommended Test ProcedureA1-2.2.1 Obtain from the supplier the sensitivity to ELF and VLF EMFs of the semiconductor manufacturing equipment to be installed.A1-2.2.2 Measure the ELF and VLF EMFs in the operating environment where the semiconductor manufacturing equipment will be installed.A1-2.2.2.1 To ensure accurate measurements, ensure that the facility electrical systems and adjacent equipment represent the planned operating environment.A1-2.2.2.2 Measure ELF and VLF EMFs by either a triaxial sensor or by a single-axis sensor in three orthogonal directions with appropriate calculations to accommodate for all orientations of the EMF vector, if possible. At a minimum, measure ELF and VLF EMFs with a single-axis sensor oriented in the direction of the maximum ELF and VLF EMF strength.12:[11:] If a three-axis ELF or VLF EMF sensor is used, the maximum reading will be automatically obtained whereas a single-axis sensor must be oriented to measure the maximum reading.A1-2.2.2.2.1 Perform measurements in time domain capturing the peaks of the signal.A1-2.2.2.2.2 Perform all measurements as differential ELF and VLF EMF strength measurements.


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A1-2.2.2.3 Measure ELF and VLF EMFs from facility infrastructure and adjacent equipment enclosures at a height of 1 m in the critical area or volume where ELF- and VLF-sensitive equipment will be installed. Additional measurements in the area 1 m above the top of the equipment that will be installed may be required if interference sources are present (e.g., overhead transport systems). A1-2.2.2.3.1 If using a single-axis ELF or VLF EMF sensor, orient the sensor to produce the maximum reading at each measurement point. A1-2.2.2.3.2 Record the maximum ELF and VLF EMF strength reading at each measurement point.[A1-2.2.3 ] Measure the ELF and VLF EMFs in accessible points in the operating environment once the semiconductor manufacturing equipment is installed and in operation. (i.e., equipment under test [EUT]).A1-2.2.2.4 [A1-2.2.3.1 ] To ensure accurate measurements of the actual operating environment, ensure that the facility electrical systems and adjacent equipment are in normal operation.A1-2.2.2.5 [A1-2.2.3.2 ] Measure ELF and VLF EMFs by either a triaxial sensor or by a single-axis sensor in three orthogonal directions with appropriate calculations to accommodate for all orientations of the EMF vector, if possible. At a minimum, measure ELF and VLF EMFs with a single-axis sensor oriented in the direction of the maximum ELF and VLF EMF strength.A1-2.2.2.5.1 [A1-2.2.3.2.1 ] Perform measurements in time domain capturing the peaks of the signal.A1-2.2.2.6 [A1-2.2.3.3 ] Perform all measurements as differential ELF or VLF EMF strength measurements.[A1-2.2.3.4 ] Measure equipment, if installed, and facility ELF and VLF EMFs at a distance of 1 m from the entire enclosure of the EUT either already present or to be installed at a height of 1 m. Measure equipment ELF and VLF EMFs at a distance of 1 m from the entire enclosure of the equipment under test (EUT) at a height of 1 m.[A1-2.2.3.5 ] Use measurement points no greater than 0.5 m apart in the location specified above. A1-2.2.2.7 [A1-2.2.3.6 ] If using a single-axis ELF or VLF EMF sensor, orient the sensor to produce the maximum reading at each measurement point.A1-2.2.2.8 [A1-2.2.3.7 ] Record the maximum ELF and VLF EMF strength reading at each measurement point.A1-2.3 CalculationsA1-2.3.1 Calculate the maximum value of the root mean square (RMS) ELF and VLF EMF strength readings from all the measurement points of each EMF Audit.[A1-2.3.2 ] Compare the maximum RMS ELF strength value measured in the EMF Audit to the value ranges in Table A1-1 to identify the EMF strength level (i.e., A to -F). Table A1-1 ELF EMF RMS Strength Levels and Limits

Level ELF EMF RMS Strength Limits, pT ELF EMF RMS Strength Limits, mG

A < 10 < 0.10

B < 25 < 0.25

C < 50 < 0.50

D < 100 < 1.00

E < 200 < 2.00

F ≥ 200 ≥ 2.00

13:[12:] 1T = 10,000GA1-2.4 VLF from Overhead Transport[A1-2.4.1 ] Automation semiconductor manufacturing equipment utilizing contact-free/inductive power supplies in the VLF range (i.e., 3-30 kHz) should keep the emitted magnetic field below 1 mG (0.1 µT) at all times and at distances greater than 1.5 meters away from the surface of the equipment (e.g., the track).A1-2.5 Recommended CompatibilityA1-2.5.1 Compare the ELF EMF strength level prior to installing semiconductor manufacturing equipment to the sensitivity to ELF EMFs of the equipment to be installed to determine if the location is compatible with the equipment’s ELF EMI immunity limits.


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A1-2.5.2 Compare the ELF EMF strength level once the semiconductor manufacturing equipment is installed and in operation to the sensitivity to ELF EMFs of the adjacent equipment to determine if the equipment’s strength level is still compatible with the adjacent equipment’s ELF immunity limits.


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APPENDIX 2ELECTROMAGNETIC INTERFERENCE (EMI) AUDITNOTICE: The material in this appendix is an official part of SEMI E33 and was approved by full letter ballot procedures on [insert date of approval by responsible regional standards committee].

A2-1 EMI Audit OverviewA2-1.1 An EMI Audit, just like an ESD Audit, can be a very useful tool of EMI management in semiconductor manufacturing cleanroom environments. The following items are recommended to be checked during an EMI Audit: Radiated EMI levels near semiconductor manufacturing equipment—both continuous and transient (peak). Conducted EMI on cables—both continuous and transient (peak). Note that it may be difficult to devise an

acceptable method to measure conducted EMI on hard-to-reach cables. EMI levels on the ground of semiconductor manufacturing equipment. Proper fastening of all connectors. Closed equipment covers with good electrical connection. Unnecessarily long (i.e. beyond effective service loops) or coiled ground and other wires and cables.

14:[13:] Refer to Related Information 1 for more information on the measurement of continuous and transient electromagnetic emissions and their effect on the operation of electronic semiconductor manufacturing equipment.A2-1.2 An EMI map of the facility, which results from an EMI Audit, may serve as a very useful tool for EMI management.A2-1.3 Special attention should be paid to make the EMI Audit method and tools simple enough to be used by any knowledgeable factory engineer and technician (i.e., not only by highly qualified specialists).A2-1.4 An EMI Audit performed prior to installing semiconductor manufacturing equipment may serve as a very useful tool to determine if the areas are compatible with the semiconductor manufacturing equipment EMI immunity limits to prevent having to relocate semiconductor manufacturing equipment due to EMI generated by the facility infrastructure or other equipment.[A2-1.5 ] EMI Audits should be performed by a knowledgeable engineer or/ technician. A2-1.5 [A2-1.6 ] EMI Audits should be performed before installation of semiconductor manufacturing equipment, before and after maintenance of semiconductor manufacturing equipment, and repeated at least once per year.A2-1.6 An EMI Audit of the facility is a responsibility of the equipment user, although the equipment manufacturer can conduct its own audit to determine electromagnetic environment at or near its equipment.


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RELATED INFORMATION 1 CONTINUOUS AND TRANSIENT ELECTROMAGNETIC EMISSIONS AND THEIR EFFECT ON OPERATION OF ELECTRONIC EQUIPMENTNOTICE: This Related Information is not an official part of SEMI E33 and was derived from the work of the global Metrics Technical Committee. This Related Information was approved for publication by full letter ballot procedures on [A&R approval date].

R1-1 AcronymsR1-1.1 HBM — human body modelR1-1.2 MM — machine modelR1-1.3 RF — radio frequency

R1-2 Time-Domain Properties of Electromagnetic Emissions R1-2.1 EMFs can be continuous (i.e., slowly changing with time) or transient (i.e., rapidly changing with time). An EMF exhibiting aspects of both properties is also not uncommon.R1-2.1.1 Examples of continuous electromagnetic emission are those caused by the EMF emanating from a radio frequency (RF) generator or an RF heater.R1-2.1.2 An example of a transient electromagnetic emission is that caused by the EMF generated by an ESD event.R1-2.1.3 An example of an electromagnetic emission that exhibits aspects of both periodic and transient properties is that caused by the EMF generated by a switched power supply where each ‘switching’ is a transient event, but these events are repeated periodically.

R1-3 Effects of Electromagnetic Emissions on Normal Operation of Electronic EquipmentR1-3.1 Different types of electromagnetic emission have different influences on the normal operation of equipment.R1-3.1.1 Continuous Electromagnetic EmissionR1-3.1.1.1 Continuous electromagnetic emission generally tends to reduce signal-to-noise ratio, thus increasing equipment vulnerability to additional EMI.R1-3.1.1.2 Continuous electromagnetic emission is also capable of influencing the data from analog and low-level digital sensors by imposing a noise signal on connecting wires.R1-3.2 Transient Electromagnetic EmissionR1-3.2.1 Transient electromagnetic emissions may generate pulses in circuits that the circuits can misinterpret as legitimate signals, therefore causing the circuits to act unpredictably.R1-3.2.2 Transient electromagnetic emissions are much harder to analyze and troubleshoot because their arrival is often random. Yet transient electromagnetic emissions in the semiconductor cleanroom environment often have very high magnitude and cause a high relative percentage of equipment downtime.R1-3.2.3 The majority of strong transient electromagnetic emissions in the semiconductor cleanroom environment are caused by ESD events.R1-3.2.3.1 Most of the ESD events in such an environment are metal-to-metal contact, which are closer to a machine model (MM) discharge than to a human body model (HBM) discharge as defined by the ESD Association3.R1-3.2.3.2 More specifically, MM discharge is typically significantly shorter than HBM discharge, resulting in different spectral content of the electromagnetic emission.R1-3.2.3.3 MM discharge can be multiple, thus increasing the impact of the generated fields on the circuits.

3 Electrostatic Discharge Association, 7900 Turin Road, Building 3, Suite 2, Rome, NY 13440-2069, USA. Telephone: 315.339.6937; Fax: 315.339.6793. http:// www.esda.org


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R1-4 Measurement of Electromagnetic EmissionsR1-4.1 EMC standards and regulations (see Related Information 3) for electromagnetic emission largely specify detection of EMFs using a very slow quasi-peak detector that essentially disregards occasional transient signals and greatly reduces the apparent magnitude of periodic transient signals.R1-4.2 Frequency-domain measurements performed by spectrum analyzers and EMF receivers do not offer sufficient time resolution for accurate measurements of high-speed signals. A high-speed digital storage oscilloscope with a sufficient sampling rate (i.e., at least 5 GS/s) and an appropriate antenna, or an ESD event monitor are better tools for assessing such signals.R1-4.2.1 In contrast to making time-domain measurements, where no instant antenna factor correction can be made and the only antenna that will represent the waveform of the broadband transient signal correctly is an antenna with a flat frequency response, a choice of antenna is critical when making time-domain measurements using an oscilloscope or postprocessing should be applied on the data captured afterwards.R1-4.3 It is recommended that both radiated and conducted electromagnetic emission tests include an assessment of transient signals.


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RELATED INFORMATION 2 NEAR-FIELD ELECTROMAGNETIC ENVIRONMENTNOTICE: This Related Information is not an official part of SEMI E33 and was derived from the work of the global Metrics Technical Committee. This Related Information was approved for publication by full letter ballot procedures on [A&R approval date].

R2-1 IntroductionR2-1.1 The characteristics of an EMF differ as a function of the distance between the source and the point of measurement, such as the location of the equipment being affected. The measurements done for government agency approval are performed at a distance of 3 m or 10 m or even outside the user’s premises. At these distances, the characteristics of the EMF are determined by the source and the distance of the point of measurement from the source. The properties of the material between the source and the point of measurement (i.e., air) also influence the characteristics. Current EMC compliance testing in the far-field electromagnetic environment does not represent the typical electromagnetic environment in a semiconductor manufacturing cleanroom where the equipment is frequently located in the near-field electromagnetic environment with respect to the facility infrastructure and adjacent equipment.

R2-2 AcronymsR2-2.1 E-field — electric fieldR2-2.2 H-field — magnetic field

R2-3 EMF Wave Impedance CharacteristicsR2-3.1 Closer to the source the characteristics of the EMF are different than in the far field away from the source. R2-3.1.1 If the EMF is generated by an object with high current and low voltage, the resulting EMF produced is primarily ‘magnetic’ (i.e., a magnetic field; H-field [A/m]).R2-3.1.2 If the EMF is generated by an object with high voltage but little or no current, the resulting EMF is primarily ‘electric’ (i.e., an electric field; E-field [V/m]).R2-3.1.3 The EMF can be characterized by its wave impedance.R2-3.1.3.1 The wave impedance, ZW, is a ratio of the values of the electric (E) and magnetic (H) components of a particular field. At any given point, the plane wave free field impedance is defined by Equation R2-1:

ZW = (R2-1)

15:[14:] The wave impedance formula is a ratio similar to Ohm’s law, which states that R = V / I, where R is resistance, V is voltage, and I is current.R2-3.2 A pure E-field or a pure H-field exists only for static electric or magnetic fields. R2-3.2.1 A conductor with a substantial current causing an H-field still carries some small voltage that creates an E-field, albeit small in magnitude.R2-3.2.2 Similarly, a rod antenna or a nonterminated wire still carries some current via parasitic capacitance to ground.R2-3.3 As seen from Equation R2-1 above, predominately H-fields are characterized by low wave impedances, while predominately E-fields have very high wave impedances.R2-3.4 The distance from the source also factors into the wave impedance equation. E-fields and H-fields attenuate as this distance increases. Each field begins to produce its complementary field. As a result of this effect, the wave impedance changes with the distance from the source. For an H-field the wave impedance increases with the distance from the source, and for an E-field the wave impedance decreases.R2-3.4.1 The formula for the impedance of a wave, within (λ /2π) of a magnetic source is given in Equation R2-2:

ZW = Z0 ×

λ2 π×r (R2-2)


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where: r is the distance from the source,λ is the wavelength, andZ0 is the impedance of free space (~377Ω).

R2-3.4.2 The formula for the impedance of a wave, within (λ /2π) of an electric source is given in Equation R2-3:

ZW = Z0 ×

2 π×rλ (R2-3)

where: r is the distance from the source,λ is the wavelength, andZ0 is the impedance of free space (~377Ω).

R2-3.5 Beginning at some distance from the source, called the transitional region, both fields will have impedance that thereafter stays the same. This ratio is based on wave impedance, called the characteristic impedance, which is the property of the medium in which the fields are propagated. For dry air, this impedance is also ~377. Although humidity will slightly reduce this value, it is a reasonable estimate for a cleanroom environment.R2-3.5.1 As seen from Equation R2-1 above, constant wave impedance means that the ratio of the E-fields and H-fields beyond the transitional region becomes the same regardless of how they began. The field before the transitional regional is called the near-field (or Fresnel region) and the field beyond it is called the far-field (or Fraunhofer region).R2-3.5.2 Figure R2-1 shows the transition from the near-field to the far-field. As shown in the near-field, each component has to be considered separately.R2-3.5.3 The transition zone surrounds a point defined by Equation R2-4:

r = (R2-4)

where: r is the distance from the source, and is the wavelength of the fields.

Figure R2-1 Wave Impedance as a Function of a Distance


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R2-3.5.4 Figure R2-2 shows the distance between the transition region and the source as a function of signal frequency. As shown for the frequencies of interest (i.e., 30 MHz to 1 GHz), all radiated EMC compliance tests (classes A and B) are conducted completely in the far field.

Near-Field to Far-Field Transitional Region

Frequency, MHz

Dis

tanc

e, m

Figure R2-2Near-Field to Far-Field Transitional Region as a Function of Frequency

R2-4 Electromagnetic Environment in a Semiconductor Manufacturing CleanroomR2-4.1 In a semiconductor manufacturing cleanroom, much of the equipment is within the near-field of other equipment.R2-4.2 At lower frequencies, EMI is caused by collocation issues.R2-4.3 At all frequencies, EMI is caused by coexistence of different electronic products in a close space, such as close proximity of load port, ionizer, robot, and inspection subsystems in a wafer handler.R2-4.4 Far-field EMC compliance tests, which all of the equipment may have passed, are in no way an assurance of the absence of mutual EMI in the near-field.R2-4.4.1 For the equipment collocated within the near-field region, it is recommended that electromagnetic performance be examined in the conditions of its applications (i.e., in the near-field). Because regular far-field antennae are not suited for near-field tests, use of special near-field probes or antennae is advisable.


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RELATED INFORMATION 3 SUBSET LIST OF GUIDANCE STANDARDS, REGULATIONS, AND DIRECTIVESNOTICE: This Related Information is not an official part of SEMI E33 and was derived from the work of the global Metrics Technical Committee. This Related Information was approved for publication by full letter ballot procedures on [A&R approval date].

R3-1 Subset List of Guidance Standards, Regulations, and DirectivesR3-1.1 SEMI Standards

SEMI F47 — Specification for Semiconductor Processing Equipment Voltage Sag Immunity

SEMI E78 — Guide to Assess and Control Electrostatic Discharge (ESD) and Electrostatic Attraction (ESA) for Equipment

SEMI E129 — Guide to Assess and Control Electrostatic Charge in a Semiconductor Manufacturing Facility

R3-1.2 European Commission (EC) Regulations/Directives/Standards4

Directive 2004/108/EC — Directive 2004/108/EC on the Approximation of the Laws of the Member States Relating to Electromagnetic Compatibility and Repealing Directive 89/336/EEC

R3-1.3 European Committee for Standardization (CEN) Standards5

EN 619 — Continuous handling equipment and systems – Safety and EMC requirements for equipment for mechanical handling of unit loads

R3-1.4 International Electrotechnical Commission (IEC) Standards6

EN55011/CISPR 11 — Industrial, Scientific and Medical (ISM) Radio-Frequency equipment - Electromagnetic disturbance characteristics - Limits and methods of measurement

EN 55022/CISPR 22 — Information technology equipment – Radio disturbance characteristics - Limits and methods of measurement

NOTE 16: The International Special Committee on Radio Interference (CISPR) is a part of the IEC.

EN 55024/CISPR 24 — Information technology equipment – Immunity characteristics - Limits and methods of measurement

EN 61000-3-2/IEC 61000-3-2 — Electromagnetic compatibility (EMC) – Part 3-2: Limits - Limitation of voltage changes, voltage fluctuations and flicker in public low-voltage supply systems, for equipment with rated current <= 16 A per phase and not subject to conditional connection

EN 61000-3-3/IEC 61000-3-3 — Electromagnetic compatibility (EMC) – Part 3-3: Limits - Limitation of voltage changes, voltage fluctuations and flicker in public low-voltage supply systems, for equipment with rated current >= 16 A per phase and not subject to conditional connection

EN 61000-4-2/IEC 61000-4-2 — Electromagnetic compatibility (EMC) – Part 4-2: Testing and measurement techniques – Electrostatic discharge immunity test, Transient Immunity Standard

EN 61000-4-3/IEC 61000-4-3 — Electromagnetic compatibility (EMC) – Part 4-3: Testing and measurement techniques – Radiated Radio-Frequency, Electromagnetic Field Immunity Test

EN 61000-4-4/IEC 61000-4-4 — Electromagnetic compatibility (EMC) – Part 4-4: Testing and measurement techniques – Fast Transient/Burst Immunity Test

4 European Commission: Rue de la Loi 200/Wetstraat 200, B-1049 Bruxelles/Brussels, Belgium. Telephone: 32.2.299.30.85; Fax: 32.2.296.17.49. http://www.europa.eu.int5 European Committee for Standardization: 36 Rue de Stassart, B-1050 Bruxelles/Brussels, Belgium. Telephone: 32.2.550.08.11;Fax: 32.2.550.08.19, http://www.cenorm.be6 International Electrotechnical Commission: 3, Rue de Varembé, Case Postale 131, CH-1211 Geneva 20, Switzerland. Telephone: 41.22.919.02.11; Fax: 41.22.919.03.00, http://www.iec.ch


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EN 61000-4-5/IEC 61000-4-5 — Electromagnetic compatibility (EMC) – Part 4-5: Testing and measurement techniques – Surge Immunity Test

EN 61000-4-6/IEC 61000-4-6 — Electromagnetic compatibility (EMC) – Part 4-6: Testing and measurement techniques – Immunity to Conducted Disturbances, Induced by Radio-Frequency Fields

EN 61000-4-8/IEC 61000-4-8 — Electromagnetic compatibility (EMC) – Part 4-8: Testing and measurement techniques – Power Frequency Magnetic Field Immunity Test

EN 61000-4-11/IEC 61000-4-11 — Electromagnetic compatibility (EMC) – Part 4-11: Testing and measurement techniques – Voltage Dips, Short Interruptions and Voltage Variations Immunity Tests <16A

EN 61000-4-34/IEC 61000-4-34 — Electromagnetic compatibility (EMC) - Part 4-34: Testing and Measurement Techniques – Voltage Dips, Short Interruptions and Voltage Variations Immunity Tests >16 A per Phase

EN 61000-6-1/IEC 61000-6-1 — Electromagnetic compatibility (EMC) – Part 6-1: Immunity for residential, commercial and light-industrial environments

EN 61000-6-2/IEC 61000-6-2 — Electromagnetic compatibility (EMC) – Part 6-2: Generic standards - Immunity for industrial environments

EN 61000-6-3/IEC 61000-6-3 — Electromagnetic compatibility (EMC) – Part 6-3: Generic standards - Emission standard for residential, commercial and light-industrial environments

EN 61000-6-4/IEC 61000-6-4 — Electromagnetic compatibility (EMC) – Part 6-4: Generic standards - Emission standard for industrial environments

EN 61204-3/IEC 61204-3 — Low voltage power supplies, DC output – Part 3: Electromagnetic compatibility (EMC)

EN 50091-2 — Uninterruptible power systems (UPS) – Part 2: EMC requirements

EN 61326/IEC 61326 — Electrical equipment for measurement, control and laboratory use – EMC requirements

IEC 62040-2: Uninterruptible power systems (UPS) - Part 2: Electromagnetic compatibility (EMC) requirements

R3-1.5 Institute of Electrical and Electronics Engineers (IEEE) Standards7

IEEE 1100 — IEEE Recommended Practice for Powering and Grounding Electronic Equipment (IEEE Emerald Book)

R3-1.6 United States Federal Communications Commission (FCC) Code of Federal Regulations (CFR)8

CFR FCC Title 47, Part 15, Subpart B — FCC Rules and Regulations — Part 15: Radio-Frequency – Unintentional radiators

CFR FCC Title 47, Part 15, Subpart C — FCC Rules and Regulations — Part 15: Radio-Frequency – Intentional radiators

CFR FCC Title 47, Part 18 — FCC Rules and Regulations — Part 18: Industrial, scientific, and medical equipment

NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.

7 Institute of Electrical and Electronics Engineers: IEEE Operations Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, New Jersey 08855-1331, USA. Telephone: 732.981.0060; Fax: 732.981.1721. http://www.ieee.org8 United States Federal Communications Commission: 445 12th St. S.W., Washington DC 20554, USA. http://www.fcc.gov


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RELATED INFORMATION 4 FACILITY INFRASTRUCTURENOTICE: This Related Information is not an official part of SEMI E33 and was derived from the work of the global Metrics Technical Committee. This Related Information was approved for publication by full letter ballot procedures on [A&R approval date].

17: This section is in place pending future development of an EMC Standard for Facility Level.

R4-1 Facility InfrastructureR4-1.1 Electrical and communications interconnections may serve as distribution paths for EMI. Electromagnetic emissions propagate throughout a facility via its infrastructure (e.g., common ground [i.e., ground port] and power lines as well as via network and other cables that are spread throughout the facility).R4-1.2 Electromagnetic emission can also be generated by ESD events within the facility. Refer to SEMI E129 for more information on controlling these ESD events at the facility level.[R4-1.3 ] Users should be aware of the electromagnetic environment in the facility and that the presence of interference exceeding the equipment EMC immunity levels identified in this Ddocument and other relevant documents may cause equipment malfunction.R4-1.3 [R4-1.4 ] For improved EMC of installed equipment, the facility environment in which the equipment is installed should provide electromagnetic exposure to the equipment of less than 50% of the specified EMI immunity levels of the equipment.

R4-2 Equipment CollocationR4-2.1 EMI-sensitive equipment should not be located in the immediate proximity to other equipment that can provide electromagnetic exposure to the equipment of greater than 50% of the specified EMI immunity limits for the EMI-sensitive equipment.R4-2.2 It is recommended that the supplier or the user conduct a site EMI Audit (see Appendix 2) on the location prior to installation or relocation of the equipment.

R4-3 Incidental Electromagnetic Emission Caused by Process, Handling, Transportation, Etc.R4-3.1 Such iIncidental electromagnetic emission caused by process, handling, transportation, etc., can add to equipment functionality problems because compliance tests do not normally include such types of electromagnetic emission.R4-3.2 It is recommended that the supplier or the user measure both frequency and time-domain electromagnetic emissions once the equipment is installed and in operation in order to assure that the electromagnetic emissions do not exceed greater than 50% of adjacent equipment’s EMI immunity limits.18: Refer to Related Information 1 for more information on measurement of continuous and transient electromagnetic emissions and their effect on operation of electronic equipment.

NOTICE: SEMI makes no warranties or representations as to the suitability of the Standards set forth herein for any particular application. The determination of the suitability of the Standard is solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, equipment labels, equipment data sheets, and other relevant literature respecting any materials or equipment mentioned herein. These Standards are subject to change without notice.

By publication of this Standard, Semiconductor Equipment and Materials International (SEMI) takes no position respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this Standard. User of this Standard are expressly advised that determination of any such patent rights or copyrights, and the risk of infringement of such rights, are entirely their own responsibility.


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