EUV imaging performance and challenges of 10nm and 7nm node ...
Transcript of EUV imaging performance and challenges of 10nm and 7nm node ...
ASML Netherlands: Eelco van Setten, Eleni Psara, Dorothe Oorschot, Erik Wang, Guido Schiffelers, Jo Finders
ASML Brion: Laurent Depre
ST Microelectronics: Vincent Farys
EUV imaging performance and challenges of 10nm and 7nm node Logic
International Symposium on Extreme Ultraviolet Lithography – October 27, 2014 – Washington, D.C.
Chipmakers are evaluating patterning solutions for
coming Logic nodes Public
Slide 2
1D
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Extra layers needed New integration scheme 6-8 exposures
2D
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Good pattern fidelity Re-use existing designs Single exposure
ArFi EUV
ArFi multiple patterning Insufficient pattern fidelity 3 exposures
Logic M1 one of most challenging layers for lithography Public
Slide 3
• Tightest pitch in design with lines from fully dense to (semi-)iso
• 2D feature shapes (H and V combined), like elbows
• Many line-end features, like tip-to-tip and tip-to-space
NXE:3300B
NA 0.33
Illumination Conventional 0.9s, 6 off-axis pupil settings
Resolution 22 nm
Dedicated Chuck Overlay / Matched Machine Overlay
3.0 nm / 5.0 nm
Productivity 55 - 125 Wafers / hour
Resist Dose 15 mJ/cm2
Logic M1 evaluated on ASML’s NXE:3300B using
conventional and Quasar illumination at low dose Public
Slide 4
R. Peeters et al, EUV Lithography - Industrialization Progress
Logic M1 – 10nm node
Min. pitch ~ 42 – 48nm
CD control ~ 1.4-1.7nm (7% min. HP)
Min. Tip-to-tip ~35-50nm
Min. Tip-to-space ~28-35nm
• NXE:3300B imaging performance – Building blocks
• CDU, HV, through pitch and full lot performance from scanner qualification
• Line end control
• 2D random logic – 10nm node Metal 1
• OPC model calibration and hotspot verification
• Towards 7nm node logic
• Summary and conclusions
Public
Slide 5
Contents
Slide 6
Multiple NXE:3300B systems show CDU below 1.5nm dense and iso lines exposed at 16mJ/cm2 – conventional ill.
22nm DLs: Full wafer CDU <1.2nm
22nm ILs: Full wafer CDU < 1.5nm
System A System B System C System D System E
CD measurements performed with YieldStar
Public
Data corrected for reticle errors and mask shadowing effect
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System A System B System C System D System E
CD
H-V
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m]
Dense
Iso
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System A System B System C System D System E
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Hor
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NXE:3300B shows stable HV offset and CD through pitch control
between systems
22nm dense and iso lines HV offset stability 22nm H&V L/S through pitch stability
22nm H and V L/S,
pitch 44 and 154nm
• HV offset variation over 5 tools within +/-0.35nm
• CD through pitch control over 5 tools within +/-0.55nm (< +/- 3% TargetCD)
HV offset variation over 5 tools
Public
Slide 7
22nm L/S, pitch 44, 50.5,
57, 66, 88 and 154nm
Reference pitch 16mJ/cm2
Proximity error over 5 tools
19.0
20.0
21.0
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Mea
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Wafer no.
22nm DL 22nm IL
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CD
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Wafer no.
22nm DL CDU 22nm IL CDU
NXE:3300B shows stable through lot performance
22nm H and V L/S, pitch 44 and 154nm @ 16.6mJ/cm2
Through lot stability
(HV pooled data):
• Mean CD: +/-0.3nm
• FW CDU: +/-0.15nm
• IF CDU: +/- 0.1nm
Mean CD
Full wafer / Intra Field CDU
CD measurements performed with YieldStar
Courtesy of Public
Slide 8
Good line-end control allows aggressive shrink of
random 2D logic Public
Slide 9
• Line end performance evaluated using dedicated test structures
Tip-to-tip (T2T) Tip-to-space (T2S)
Dark field pattern polygon = space
Logic M1 – 10nm node
Min. pitch ~ 42 – 48nm
Min. Tip-to-tip ~35-50nm
Min. Tip-to-space ~28-35nm
Conventional ill
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32p64 24p48 22p44
Lin
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Measured
Simulated
Tip-to-tip Line-end shortening
Resist shows significant Line-end-shortening of ~ 13nm for
24 and 22nm HP designs
Conventional illumination
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T2T
gap
CD
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T2T gap design [nm; 1x]
32p64 no OPC
24p48 no OPC
22p44 no OPC
Dose-to-size ~ 15mJ/cm2
Rigorous simulation: 9nm resist blur + typical 3300 scanner
Public
Slide 10
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T2T
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T2T gap design [nm; 1x]
22p44 @ Nom.CD - Simulated
22p44 @ CD+20% - Simulated
Conventional ill
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T2T
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CD
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T2T gap design [nm; 1x]
22p44 @ Nom.CD - Measured
22p44 @ Nom.CD - Simulated
T2T < 25nm feasible at low dose by means of OPC and
overexposure trench
Tip-to-tip – 22p44nm w/ OPC
• T2T of 30nm feasible by lowering gap CD on mask
to 14nm (1x) and overexposure trench (CD+20%)
• Simulations: OPC (eg. Hammerheads) enables <
25nm T2T at low dose
Tip-to-tip – 22p44nm
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T2T
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T2T gap design [nm; 1x]
22p44 @ Nom.CD - Measured
22p44 @ Nom.CD - Simulated
22p44 @ CD+20% - Measured
22p44 @ CD+20% - Simulated
Dose = 15mJ/cm2
Dose = 17.2mJ/cm2
Hammerhead applied: 2nm bias per edge
Public
Slide 11
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32p64 24p48 22p44 20p40 18p38 T2S 20p45M
EEF
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Conv
Conv - Sim
Quasar-45
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T2T T2S
MEE
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N20 ArFi
MEEF T2T/T2S close to 1 for N10. More than 5x improvement
w.r.t. N20 performance with ArFi
T2T and T2S MEEF – EUV
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MEE
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N20 ArFi
N10 EUV
T2T and T2S MEEF – N20 ArFi vs N10 EUV
T2T T2S
• Low Mask Error Enhancement Factor for gap CD for both T2T and T2S features
for various grating pitches
• Both for Conventional and Quasar illumination, supported by simulations
• Large improvement w.r.t. current performance at N20 using ArFi
Public
Slide 12
Tip-to-tip Tip-to-space
Raw full wafer CDU T2T and T2S < 7% of targetCD at 18mJ/cm2
22nm dense L/S with 20nm gap (1x) @ 18mJ/cm2
Including reticle fingerprint
T2T CDU Mean gap CD FW CDU IF CDU
V trench 43.6nm 2.6nm 2.0nm
H trench 40.3nm 2.8nm 2.4nm
T2S CDU Mean gap CD FW CDU IF CDU
V trench 28.1nm 1.4nm 1.1nm
H trench 25.4nm 1.4nm 1.0nm
22nm dense L/S with 20nm gap (1x) @ 18mJ/cm2
Including reticle fingerprint
Public
Slide 13
Local gap CDU dependent on trench width and resist contrast
• Large LCDU at small trench width More
advanced OPC (Hammerheads) expected to
reduce LCDU significantly
Tip-to-tip Tip-to-space
Logic M1 20nm node ArFi - Actual
10nm node EUV – Scaled from N20
Tip-to-tip LCDU ~11nm <8nm
Tip-to-space LCDU ~7.5nm <5.5nm
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Trench CD [nm]
24p48 Conv - Resist C
22p44 Q45 - Resist C
22p44 Q45 - Resist D
~45 mJ/cm2 ~18 mJ/cm2 0
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T2S
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LC
DU
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Trench CD [nm]
20p45 Conv - Resist C
20p45 Q45 - Resist C
22p44 Q45 - Resist D
~41 mJ/cm2 ~20 mJ/cm2
Public
Slide 14
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T2T
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LC
DU
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Dose error w.r.t. D2S [%]
24p48 Conv - Meas
22p44 Q45 - Meas
22p44 Q45 - Meas
Local gap CDU driven by dose sensitivity and resist properties.
OPC reduces LCDU
• OPC (Hammerhead) reduces LCDU at same
dose or allows dose reduction at same LCDU
Tip-to-tip – w/OPC Tip-to-tip
• LCDU prediction: LCDU ~ A * D*dCD/dD
• A = resist dependent constant
• LCDU trend driven by dose sensitivity
Hammerhead applied: 2nm bias per edge
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T2T
gap
LC
DU
[n
m; 3
s]
Dose error w.r.t. D2S [%]
24p48 Conv - Meas
24p48 Conv - Prediction
22p44 Q45 - Meas
22p44 Q45 - Prediction
22p44 Q45 - Meas
22p44 Q45 - Prediction
Resist D ~ 45mJ/cm2 Resist C ~ 18mJ/cm2
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T2T
gap
LC
DU
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Dose error w.r.t. D2S [%]
22p44 Q45 - Prediction
22p44 Q45 - Prediction
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T2T
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Dose error w.r.t. D2S [%]
22p44 Q45 - Prediction
22p44 Q45 HH - Prediction
22p44 Q45 - Prediction
Resist D ~ 45mJ/cm2
Resist C ~ 18mJ/cm2
Resist C w/ OPC ~ 16mJ/cm2
Public
Slide 15
• NXE:3300B imaging performance – Building blocks
• CDU, HV and through pitch performance from scanner qualification
• Line end control
• 2D random logic – 10nm node Metal 1
• OPC model calibration and hotspot verification
• Towards 7nm node logic
• Summary and conclusions
Contents Public
Slide 16
Accurate Metal layer model for multiple illumination modes Calibrated Tachyon NXE M3D+ model
Conventional
Quasar
+/-10% Dose
+/- 60nm Focus
+/-10% Dose
+/- 60nm Focus
• Quasar-45 shows better pattern definition
Red contours Green contours
NXE:3300, 10 nm logic metal 1 layer, 45 nm pitch
Public
Slide 17
Test mask without OPC - 20 mJ/cm2
Tachyon Litho Manufacturing Check (LMC) & M3D+
correctly predicts bridge- and neck-defects through focus
Test mask without OPC
20 mJ/cm2
Nominal Focus
Focus = -60nm
No bridge- and neck-defects expected at
nominal conditions in line with observations
Potential bridge defects in defocus (+/60nm)
highlighted by LMC in line with observations
Focus = 60nm
NXE:3300, 10 nm logic metal 1 layer, 45 nm pitch
Public
Slide 18
Model predictions confirm good printability thru focus with
Quasar and OPC Calibrated Tachyon NXE M3D+ model
-60nm
0nm
60nm
Focus Early process results:
Predicted contours (blue)
match well SEM contours
NXE:3300, 10 nm logic metal 1 layer, 45 nm pitch
Test mask with basic OPC
20 mJ/cm2
Public
Slide 19
OPC enables scaling to sub-N10 (40nm) min. pitch at
low dose
Basic OPC applied
Dose = 21mJ/cm2 Dose = 20mJ/cm2
Public
Slide 20
NXE:3300, 10 nm logic metal 1 layer, 40 nm pitch
• NXE:3300B imaging performance – Building blocks
• CDU, HV and through pitch performance from scanner qualification
• Line end control
• 2D random logic – 10nm node Metal 1
• OPC model calibration and hotspot verification
• Towards 7nm node logic
• Summary and conclusions
Public
Slide 21
Contents
Initial evaluation of N7 Logic M1 done on ASML’s
NXE:3300B using Quasar and Dipole illumination
Logic M1 – 7nm node
Min. pitch ~ 32 – 36nm
Min. Tip-to-tip ~25-35nm
Min. Tip-to-space ~18-25nm
Public
Slide 22
Large PWs on NXE:3300B for minimum pitch N7 design
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EL (
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DoF (nm)
16nm H dense L/S
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EL (
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H 17nm DL
V 17nm DL
16nm 1:1 L/S H - Dipole 90Y 17nm 1:1 L/S H&V – Quasar 45
• Sufficient resolution and process window for N7 development
• Further resist development required to lower dose
• NOTE, no mask optimization done
Dose-to-size ~ 55mJ/cm2
Public
Slide 23
Conventional ill
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T2T
gap
CD
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T2T gap design [nm; 1x]
18p36 @ Nom.CD
18p36 @ CD+20%
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T2T
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CD
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T2T gap design [nm; 1x]
16p32 @ Nom. CD
16p32 @ CD+20%
Simulations show T2T ~20nm feasible for 7nm node
resolution – Further optimization by means of FlexPupil
Tip-to-tip – 16p32
• OPC enables 20nm T2T at 36nm and 32nm
pitch using std. off-axis illumination
• MEEF ~ 1 in region of interest
Tip-to-tip – 18p36
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T2T
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CD
[n
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T2T gap design [nm; 1x]
16p32 @ Nom. CD
16p32 @ CD+20%
16p32 @ Nom.CD - HH
16p32 @ CD+20% - HH0
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T2T
gap
CD
[n
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T2T gap design [nm; 1x]
18p36 @ Nom.CD
18p36 @ CD+20%
18p36 @ Nom.CD - HH
18p36 @ CD+20% - HH
Hammerhead applied: 1nm bias per edge Hammerhead applied: 1nm bias per edge
Rigorous simulation: 6nm resist blur + typical 3300 scanner Rigorous simulation: 5.3nm resist blur + typical 3300 scanner
• Further optimization possible by means of
FlexPupil
Public
Slide 24
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Ex
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Depth of focus (nm)
SMO & FlexPupil can greatly improve process window SMO FlexPupil shape vs. best standard pupil: 7 nm node metal 1 example
Standard
Quasar 45
>20% overlapping
process window gain SMO
FlexPupil
• 7 nm node logic metal 1 layer
• Logic standard cells, dark field
• Tachyon NXE M3D+ model used
• NXE:3300 K1 = 0.39
• Min pitch = 32 nm, min feature 16 nm
Slide 25
Public
• NXE:3300B imaging performance – Building blocks
• CDU, HV and through pitch performance from scanner qualification
• Line end control
• 2D random logic – 10nm node Metal 1
• OPC model calibration and hotspot verification
• Towards 7nm node logic
• Summary and conclusions
Public
Slide 26
Contents
Summary and conclusions
• NXE:3300B evaluated for N10 and N7 logic performance
• CDU, HV and proximity performance meet N10
requirements
• Line-end performance for N10 (~45nm pitch) allows
aggressive T2T and T2S design at low dose
• T2T down to 30nm, T2S down to 20nm feasible
• OPC required to mitigate line-end shortening and local line-end
variations - Validated by rigorous simulations
• OPC enables scaling to sub-N10 (40nm) min. pitch at
<20mJ/cm2 with 100nm DOF
• Tachyon NXE OPC+ model calibrated for conventional and
Quasar illumination showing good contour overlap
• LMC correctly predicts bridge- and neck-defects through focus
• Initial imaging performance evaluation for N7 logic started
• 17nm HP resolution for H &V achieved with Q45
• Rigorous simulations and calibrated Tachyon model shows ‘2D-
style’ N7 logic M1 feasible
• SMO and FlexPupil can greatly improve process window
Slide 27
Public
31nm 19nm 27nm
p45 nm Logic M1
p35 nm Logic M1
17nm DL H 17nm DL V
Acknowledgements
Slide 28
Special thanks to: Public
ASML demo group
• Maarten van Dorst
• Peter Rademakers
• Cynthia van den Akker
ASML D&E Imaging Applications
• Cristina Toma
• Natalia Davydova
• Andre van Dijk
• Frank Horsten
• Ijen van Mil
• Gijsbert Rispens
• Vadim Timoshkov
ASML Albany
• Bart Kessels
• Brian Lee
• Jean Galvier • Dan Corliss
• Chris Robinson
• Patrick Wong
• Jing Wang
Thank you for your
attention !