Electronics, microelectronics, nanoelectronics, … Part II
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Transcript of Electronics, microelectronics, nanoelectronics, … Part II
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Budapest University of Technology and Economics
Department of Electron Devices
eet.bme.hu
Electronics, microelectronics, nanoelectronics, …
Part II
Mizsei, János www.eet.bme.hu
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Outlinenanoscale effects•3-2-1-0 dimensions•atomic scales: different transport mechanisms (thermal, electrical, mechanical)
technology at nanoscale•lithography by nanoballs•nanoimprint•Langmuir-Blodgett technology•MBE – molecular beam epitaxy•FIB – focused ion beam •AFM, STM processes
nanoscale devices•QWFET•single electron devices•nanotubes •nanorelays •organic molecular integrated circuits •vacuum-electronics•spintronics •kvantum-computing•oxide electronics •thermal computing
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Nanoscale effects
February 6, 2013
• density of states for 3
2 1 0 dimension objects
• tunnelling
• surface/interface scattering
• ballistic transport
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Technologies at nanoscale
February 6, 2013
•lithography by nanoballs•nanoimprint•Langmuir-Blodgett technology•MBE – molecular beam epitaxy•FIB – focused ion beam •AFM, STM processes
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Lithography by nanoballs
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Nanoimprint
February 6, 2013
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Nanoimprint
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Langmuir-Blodgett technology
February 6, 2013
for molecular monolayer
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MBE – molecular beam epitaxy
February 6, 2013
Computer controlled evaporation (PVD)
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MBE – molecular beam epitaxy
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FIB – focused ion beam
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FIB – focused ion beamApplications of FIB:
•cross-sectional imaging through semiconductor devices (or any layered structure)•modification of the electrical routing on semiconductor devices•failure analysis•preparation for physico-chemical analysis•preparation of specimens for transmission electron microscopy (TEM) or other analysis•micro-machining•mask repair
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FIB – focused ion beam
FIB drilled nanohole for thermal nanoswitch with Pt overlayer
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AFM processes
February 6, 2013
Hotplate for AFM excited agglomeration and peel off
Nanostructures by AFM tip excitation of hot (120 oC) silver nanolayers
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AFM processes
February 6, 2013
Quantum corall by AFM tip (Fe on Cu surface)
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AFM processes: anodic oxidation by AFM tip
February 6, 2013
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Microscopic charges on SiO2
surfaces
100 nm native oxideoxide
Si: P type, <100>, 10 ohmcm
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Charging process:(AFM, “conducting wire”)
Measuring process:Measuring process:(Kelvin electric force microscopy)(Kelvin electric force microscopy)
Low resolution, compared to the charging process !
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11:30:29 AM Fri Aug 19 2005
04:11:07 PM Thu Aug 18 2005 04:11:07 PM Thu Aug 18 2005 3 V
2
1
-1
-2
-3
3 V
2
1
-1
-2
-3
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04:11:07 PM Thu Aug 18 2005 04:11:07 PM Thu Aug 18 2005
11:30:29 AM Fri Aug 19 2005
3 V
2
1
-1
-2
-3
3 V
2
1
-1
-2
-3
Only after 300 C heat treatment !
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Microscopic charge on the SiO2
surface
Extremely high and inhomogeneous electric field:
700000V/m
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Nanoscale devices
February 6, 2013
• QWFET• single electron devices• nanotubes • nanorelays • organic molecular
integrated circuits • vacuum-electronics• spintronics • oxide electronics • thermal computing
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QWFET – quantum well fet• low bandgap enables
lower supply voltage• higher bangap substrate
helps to keep electrons in the channel
• higher mobility results in higher current
Schottky-barrier type (depletion) device
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QWFET
Problematic point: compound semiconductor in Si based technology
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Advantages of QWFET
higher speed at lower power dissipation
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Single electron transistor - SET
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Fabrication of SET by STM tip anodisation
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Single electron devices: charge-memorySET read-out
February 6, 2013
•50 nm head-surface distance
•~10 nm grain size
•~10 Terabit/inch2
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Carbon
diamond
graphite
February 6, 2013
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Graphene, carbon nanotubes
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Carbon nanotubes as quantum wires
density of states depending of chirality
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Carbon nanotube devices: CNT
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Micro-, and nanorelays
Nanorelaysnanorelays: instable mechanical movement, stick down
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Atom relay transistor (ART)
Molecular single electron switching transistor (MOSES)
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Organic molecular integrated circuits
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Organic molecular integrated circuits
~100 nm2
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Organic molecular integrated circuits
Problems with the organic molecular ICs: • technology (it has not been realised until now) • metal contacts and wires (atomic contact)• chemical instability• slow operation depending on number of
electrons/bit ratio
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Vacuum-electronics: nanosised „Vacuum tube”
Vertical field emission: Lateral field emission:
MOSFET- likegated devices
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Field emissionby gate control
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Technology
resist plasma treatment and reflow
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Characteristics of the nanosised „Vacuum tube”
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Spintronics, Stern-Gerlach experiment
February 6, 2013
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Spin: Einstein–de Haas effect
Switch on and off with the resonance frequency of the suspended mass
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GMR - giant magnetoresistance
February 6, 2013
Low resistance high resistance
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Spin- valve MRAM
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Spin- transistor on
February 6, 2013
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Spin- transistor off
February 6, 2013
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Quantum dot (QD) logika
Inverter
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Oxide electronics
February 6, 2013
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S. D. Ha and S. Ramanathan J. Appl. Phys. 110, 071101 (2011)
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(A) In high resistance state, there is a lack ofoxygen vacancies at the interface. Carriers must overcome Schottky barrierto contribute to current. (B) In low resistance state, oxygen vacancies accumulateat the interface, reducing depletion width such that tunneling is possible
Oxygen vacancy drift bipolar switching mechanismfor representative n-type oxide
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Switchable Pt/TiOx/Pt rectifier
February 6, 2013
Opposite polarityvoltage pulses control location of oxygen vacancies, which determineswhich contact is rectifying and which is Ohmic
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Experimental demonstration of spike-timing dependentplasticity (STDP) in Pt/Cu2O/W device
Appl. Phys. A, S.-J. Choi, G.-B. Kim, K. Lee, K.-H. Kim, W.-Y.Yang, S. Cho, H.-J. Bae, D.-S. Seo, S.-I. Kim, and K.-J. Lee, Synapticbehaviors of a single metal–oxide–metal resistive device, 102, 1019, 2011
(A) I-V curves of MIM deviceshowing bipolar resistive switching.
(B) For t>0 (pre-synaptic pulsefires before post-synaptic pulse), the synaptic weight increases, while for t<0, the synaptic weight decreases, in accordance with STDP.
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„Nothing beats scaled silicon but nanotechnology can complement”
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Ethical issues concerning the nanotechnology
- „nano” is a good idea and a good word to get money from the government or from the EU
- many nanoobject have not fully been tested, some of them could be dangerous for health (?)
- self replicating nanomachines may live their own life -> catastrophe ?
- …
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Problems with CMOS
device limits (6 or even more interfaces)
scale down: depletion layers, gate-tunnel current -> direct tunnel distance: 2 nm)
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Problems with the nano self-replicated machines
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Budapest University of Technology and Economics
Department of Electron Devices
eet.bme.hu
End of part II
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