Electronics Lab. Manual- October, 2012 - psut.jo Lab Manual _October 2012.pdf · Eyad J. Al-Kouz...

52
PSUT- KAIISE-Electrical Engineering Department ©Eng. Eyad J. Al-Kouz October, 2012 Princess Sumaya University for Technology The King Abdullah II School for Engineering Electrical Engineering Department Electronics Lab. (EE21338) Prepared By: Eng. Eyad Al-Kouz October, 2012

Transcript of Electronics Lab. Manual- October, 2012 - psut.jo Lab Manual _October 2012.pdf · Eyad J. Al-Kouz...

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PSUT- KAIISE-Electrical Engineering Department ©Eng. Eyad J. Al-Kouz October, 2012

Princess Sumaya University for Technology

The King Abdullah II School for Engineering

Electrical Engineering Department

Electronics Lab.

(EE21338)

Prepared By:

Eng. Eyad Al-Kouz

October, 2012

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Table of Contents:

Exp. No.

Experiment Title:

1

The Diode Characteristics.

2

Diode Circuits:

I. Small-Signal Diode.

II. Large-Signal Diode.

3

BJT Amplifiers:

I. Common Base Amplifier.

II. Common Collector Amplifier.

4

Common Emitter amplifier Design

5

Op-Amp Amplifiers Design

6

Frequency Response of CE Amplifiers:

7

Multistage Amplifier:

I. Multistage Amplifier

II. Frequency Response of Multistage Amplifier.

8

Practical Exam

9

Direct Coupled Multistage Amplifier

10

Differential Amplifier.

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Experiment (1):

DIODE CHARACTERISTICS

1.1 Reference

Sections 3.2-3.4, Electronic Devices and Circuits: The Diode as a Nonlinear Device, AC

and DC Resistance, Analysis or DC Circuits Containing Diodes.

1.2 Objectives

1. To become familiar with checking diodes using volt-ohm meters.

2. To investigate the forward and reverse-biased characteristics of diodes.

3. To learn how to determine the dc and ac resistance or a diode.

1.3 Discussion

A diode is a semiconductor device that conducts current much more readily in

one direction than in the other. The voltage across the diode terminals determines

whether or not the diode will conduct. If the anode is more positive than the cathode, the

diode will conduct current and is said to be forward-biased. If the cathode is more

positive than the anode, the diode will conduct only an extremely small leakage current

and is said to be reverse-biased.

When forward-biased, the voltage drop across a typical silicon diode is about

0.7V (germanium diodes drop about 0.3V). At forward voltages below this threshold, the

diode only permits a small current to flow. This threshold is known as the knee of the

diode characteristic curve. Since the relationship between voltage across and current

through the diode changes in this region, the diode's resistance changes. The following

formula is used to calculate the dynamic or ac resistance of the diode:

I

VrD

∆=

Where:

∆ V: is the small change in voltage across the diode

∆ I: is the corresponding change in current through the diode

The static or dc resistance at any point along the characteristic curve is calculated

using Ohm's law:

I

VRD =

Where:

V: is the voltage across the diode

I: is the current through the diode

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These relationships can be seen in the following characteristic curve diagram

shown in figure 1.1:

Figure 1.1

1.4 Procedure

1. To investigate the forward-biased characteristics of the diode, connect the following

circuit shown in figure 1.2:

Figure 1.2

2. Measure and record in Table 1.1, the diode voltage VD and the voltage VR across the

resistor for each increment of E.

3. To investigate the reverse-biased characteristics of the diode, connect the following

circuit shown in fig.1.3:

4. Measure and record in Table 1.2 the diode voltage VD for each decrement of E.

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Figure 1.3

1.5 Questions

1. Calculate and record the current values in Table 1.1; calculate the voltage VR across

the resistor and current values I in Table 1.2.

2. Using the values obtained for I and VD in Table 1.1, graph the forward I-V

characteristic curve of the diode. Plot I on the vertical axis and VD on the horizontal axis.

3. Determine the static resistance of the diode at 0.1V, 0.5V, and 0.6V using the values

obtained for I and VD from Table 1.1.

4. Graphically determine the dynamic resistance of the diode at 0.1 V, 0.5V, and 0.6V

using the I-V characteristic curve obtained in question 2.

5. Using the values obtained for I and VD from Table 1.2, calculate the static resistance of

the diode at -10V.

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Table 1.1

E (Volts)

VD (Volts)

VR (Volts)

I = VR/R

0.0

0.1

0.2

0.3

0.4

0.7

1.0

1.5

2.6

Table 1.2

E (Volts)

VD (Volts)

VR = E - VD

(Volts)

I = VR/R

0.0

-6.0

-11

-16

-21

-27

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Experiment (2): Diode Circuits

I. SMALL-SIGNAL DIODE CIRCUITS

2. I.1 Reference

Section 3.5, Electronic Devices and Circuits: Analysis of Small-Signal Diode Circuits.

2. I.2 Objectives

1. To determine the quiescent (Q) point of a small-signal diode circuit.

2. To analyze a small-signal diode circuit graphically and analytically.

2. I.3 Discussion Small-signals are those whose total peak-to-peak variation is only a fraction of

the dc component. In small-signal diode circuits, the changes in current and voltage occur

over a very small portion of the characteristic curve of the diode. The diode is operated in

its forward-biased region, which is only linear above the knee or the characteristic. (In the

linear region, a small change in diode voltage yields a large change in diode current). In

order to use the linear portion of the diode's characteristic, the small-signal is added to a

dc voltage which shifts the operating region past the knee of the characteristic.

The following equation is used to find the current in a diode circuit having a

series resistance:

R

VEI D−

= Where: E: is the applied dc voltage

I: is the current through the diode

R: is the series resistance

VD: is the voltage across the diode

This is the equation of a line, commonly called the dc load line. Every possible

combination or current I and voltage VD is a point which lies on this line. The quiescent

current and voltage correspond to the point of intersection of the characteristic curve and

the load line. The name load line comes from the fact that the slope of the line is

inversely proportional to the series resistance, or load, in the circuit.

Figure 2.I.1 shows how the load line is altered when the input voltage has a small

ac component. When the ac component is zero, the diode current and voltage have their

quiescent values, IQ and VQ.

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Figure 2.I.1

The ac resistance rD of the diode is the reciprocal of the slope of the characteristic

at the Q point.

1,026.0

===∆

∆= n

II

nV

I

Vr

DD

T

d

Where:

∆VD: is the change in diode voltage

∆I: is the change in diode current

The total diode current and diode voltage can be calculated analytically using the

following equations (assuming 0 .7V voltage drop across the diode):

tArR

rtv

trR

A

R

EtiIti

d

d

D

d

dDD

ω

ω

sin7.0)(

sin7.0

)()(

++=

++

−=+=

Where:

id (t): is the ac component of the diode current

A*( sinωt): is the applied ac source voltage

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2. I.4 Procedure

1. Connect the following small-signal diode circuit shown in figure 2.I.2:

Figure 2.I.2

2. To measure the quiescent values, or dc components, of the diode current and voltage,

set e(t) = 0V by replacing the generator with a short circuit to ground. Measure and

record the dc diode voltage VD and the dc resistor voltage VR. The quiescent diode

current can then be calculated using the relationship IQ = VR/R.

3. Reconnect the signal generator and set e(t) to 500mVp-p@1kHz. Using an

oscilloscope set for ac input coupling, observe and accurately sketch the ac component of

the voltage VD(t) across the diode.

4. To measure the ac voltage VR(t) across the resistor, it is necessary to interchange the

diode and the resistor as shown in figure 2.I.3:

Figure 2.I.3

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5. Using an oscilloscope set for ac input coupling, observe and accurately sketch the ac

component or the voltage VR(t) across the resistor. Having measured VR(t), the ac

component i(t) of the total diode current iD(t) can be calculated using the relationship

R

tVti R )()( = .

2. I.5 Questions

1. Determine the equation for the dc load line of the circuit in figure 2.I.2 and plot it on

the I-V characteristic. Note the quiescent point Q where the load line intersects the

characteristic curve. Compare this graphically obtained Q point with the measured Q

point from procedure step 2.

2. Using the measurements of procedure steps 2 and 5, write an expression for the total

diode current iD(t).

3. Using figure 2.I.1 as a guideline, draw the peak (maximum and minimum) ac load

lines on the diode characteristic. Now draw the ac component of the diode voltage VD(t)

and determine the resulting current iD(t). Compare the graphically obtained iD(t) with the

results obtained analytically in question 2.

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Experiment (2): Diode Circuits

II. LARGE-SIGNAL DIODE CIRCUITS

2. II.1 Reference

Section 3.6, Electronic Devices and Circuits: Analysis of large-Signal Diode Circuits.

2. II.2 Objectives

1. To investigate the operation of half-wave rectifiers.

2. To demonstrate the function of diodes in basic logic circuits.

2. II.3 Discussion

Large-signal diode circuits are those in which the current and voltage variations

occur over a large range of the diode's characteristic, extending from the forward-biased

region into the reverse-biased region. Thus, in large-signal circuits, diode operation is not

confined to the linear region. This means that the diode resistance changes from a very

low value to a very high one. Consequently, the diode acts very much like a switch.

One or the most important applications of the diode in large-signal circuits is to

perform rectification, by which an alternating current is changed to a direct current. Thus,

load current will flow in one direction only. It is important to note, however, that the

diode will drop about 0.7V of the voltage applied to the circuit containing it. Therefore,

the applied voltage must be greater than 0.7V in order for any current to flow through the

load. A half-wave rectifier with graphs of applied voltage and resulting current is shown

in figure 2.II.1.

Figure 2.II.1

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Another important application of large signal diode circuits is that of performing

digital logic functions. Digital logic gates are circuits which perform logical functions

such as AND or OR. In the AND function, the output is true (a high voltage) only if both

inputs are true. In the OR function the output is true if either input is true. In a typical

logic circuit, an AND gate produces a 5V output only if inputs 1 and 2 are both 5V. The

OR gate produces a 5V output if either input 1 or input 2 is 5V.

2. II.4 Procedure

1. To investigate the use of a diode in half-wave rectifier circuits, connect the circuit

shown in fig. 2.II.2:

Figure 2.II.2

2. With a dual-trace oscilloscope set for dc input coupling, measure the peak-to-peak

values of the input voltage e(t) and the output voltage VR(t). Sketch both waveforms.

3. Reverse the diode terminals in figure 2.II.2 and repeat procedure steps 2.

4. Change the input signal e(t) in figure 2.II.2 to a 5Vp-p square wave and repeat

procedure step 2.

5. To investigate the use of diodes in simple digital logic gates, connect the following

circuit shown in figure 2.II.3:

Figure 2.II.3

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6. Measure and record the values of VO at each of the combinations of values of V1 and

V2 in Table 2.II.1.

7. To investigate another useful logic gate, connect the following circuit shown in figure

2.II.4:

Figure 2.II.4

8. Repeat procedure step 6 for the values in Table 2.II.2 and the circuit of figure 2.II.4.

2. II.5 Questions

1. Using the results of procedure step 2, calculate the peak-to-peak values of the current

i(t) and sketch its waveform.

2. Repeat question 1 for the results of procedure step 3.

3. Calculate the peak-to-peak values of the current waveform i(t) in the circuit of

procedure step 4 and sketch its waveform.

4. For each set of voltages V1 and V2 in Tables 2.II.1 and 2.II.2 determine whether each

of the diodes D1 and D2 is forward or reverse-biased. Calculate VO, assuming that each

diode has a forward-biased voltage drop of 0.7V. Compare the calculated values of VO

with the measured values.

5. What digital logic function is performed by the circuit in figure 2.II.3, and figure 2.II.4?

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Table 2.II.1

Table 2.II.2

V1 (Volts)

V2 (Volts)

VO(Volts)

0

0

0

5

5

0

5

5

V1 (Volts)

V2 (Volts)

VO(Volts)

0

0

0

5

5

0

5

5

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Experiment (3): BJT Amplifiers

I. COMMON BASE AMPLIFIER

3. I.1 Reference

Sections 5.1, 5.3, and 5.6, E1ectronic Devices and Circuits: Amplifier Fundamentals,

Amplifier Analysis using Small-Signal Models.

3. I.2 Objectives

1. To investigate the common base amplifier using voltage-divider bias.

2. To measure the open-circuit voltage gain, loaded voltage gain, input resistance, and

output resistance of the common base amplifier.

3. To evaluate the common base amplifier using the small-signal equivalent model.

3. I.3 Discussion

Although it has a small input resistance, the common base amplifier can be used

in some applications requiring high voltage gain. As will be demonstrated in a later

experiment, the common base amplifier is also used in conjunction with FET amplifiers

for high frequency amplification.

When used as a small-signal amplifier; the input and output voltages and currents

vary over a small range of the transistor's characteristic curves. In this situation, the

amplifier is said to be operating in its Linear region, i.e. the gain of the amplifier is the

same for all amplitude variations at the input and output.

Small-signal amplifiers are often analyzed using ac equivalent circuits.

Figure 3.I.1 shows the small-signal ac equivalent circuit of the common base amplifier in

figure 3.I.3. Notice that no capacitors or dc voltage sources appear in the equivalent

circuit, because they are assumed to be short-circuits to the ac signal. R1 and R2 in figure

3.I.3 are similarly shorted to ac ground.

The ratio of output voltage to input voltage when the amplifier is not loaded

(RL= ∞, or open) is called the open-circuit voltage gain. The open-circuit voltage gain of

the common base amplifier can be calculated using the following equation:

e

C

eE

cC

in

O

Vr

R

rR

rR

V

VA ≈==

Where:

RC: is the external collector resistor

rc: is the internal collector resistance

RE: is the external emitter resistor

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re: is the internal emitter resistance: E

eI

r026.0

=

Where:

IE: is the dc emitter current

Figure 3.I.1

The input resistance rin (stage) of the common base amplifier is the ac resistance

looking into the input of the amplifier stage. As can be seen in figure 3.I.1:

eeEstagein rrRr ≈=)(

The output resistance ro (stage) of the common base amplifier is the ac resistance

looking back into the output of the amplifier stage. As can be seen in figure 3.I.1:

CcCstageO RrRr ≈=)(

When a load resistor RL is connected across the output and a real signal source is

connected to the input, voltage divisions take place at both the input and output.

Therefore, the voltage gain from source to load is calculated as follows:

+

+=

)()(

)(

stageOL

L

V

stageinS

stagein

S

L

rR

RA

rr

r

V

V

Where:

rS: is the internal resistance of the signal source

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3. I.4 Procedure

1. To measure the open-circuit voltage gain, Av, and the output resistance, rO (stage) of a

common base amplifier, connect the circuit in figure 3.I.2. Measure the dc voltage across

RE. This value will be used to determine the bias current: IE = VE/RE, and the internal

emitter resistance: re ≈ 0.026/IE.

Figure 3.I.2

2. With the signal generator's frequency set to 10 kHz, and VS = 20mVp-p. Measure and

record the peak-to-peak output voltage VO (including the phase relationship between Vin

and VO). The open-circuit voltage gain AV is VO/Vin.

3. To measure the output resistance, ro (stage) of the common base amplifier, connect a

10kΩ potentiometer connected as a rheostat between the output coupling capacitor and

ground. Adjust this potentiometer until VO is (one-half of the previous output). Remove

the potentiometer and measure its resistance. By the voltage divider rule, this resistance

equals the output resistance of the common base amplifier.

4. To measure the loaded voltage gain from source-to-load, VL /VS, of the common base

amplifier, connect the circuit shown in figure 3.I.3.

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Figure 3.I.3

5. With the signal generator's frequency set to 10 kHz, and VS = 20mVp-p. Measure and

record the peak-to-peak output voltage VL and the phase relationship between Vin and VL.

The voltage gain from source to load is VL /VS.

6. Reconnect the circuit of figure 3.I.3. Now increase the amplitude of the signal source

until the output voltage VL starts to distort. Measure the peak-to-peak value of the output

voltage at the point where it just starts to distort.

3. I.5 Questions

1. Using the measurements made in procedure step 1, calculate the quiescent current IE,

and the internal emitter resistance re.

2. Using the values obtained in question 1, and assuming that the internal collector

resistance is infinite, draw the small-signal ac equivalent circuit for the amplifier of figure

3.I.3.

3. Using the equivalent circuit from question 2, calculate the theoretical values for AV,

VL/VS, rin(stage), and rO(stage). Compare these with the measured values.

4. Explain the distortion observed in procedure step 6. Why does the output waveform

distort when the amplitude of the input is increased above a certain value?

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Experiment (3): BJT Amplifiers (1)

II. COMMON COLLECTOR AMPLIFIER

3. II.1 Reference

Sections 5.1, 5.3, and 5.6, Electronic Devices and Circuits: Amplifier Fundamentals,

Amplifier Analysis using Small-Signal Models, Improved Bias Methods for Discrete BJT

Circuits.

3. II.2 Objectives

1. To measure the open-circuit voltage gain, input resistance, and output resistance of the

common collector amplifier.

2. To evaluate the common collector amplifier using the small-signal equivalent model.

3. To demonstrate the effectiveness of the common collector as a buffer between a high

impedance source and a low impedance load.

3. II.3 Discussion

The last important small-signal amplifier configuration or the BJT is the common

collector, or emitter follower amplifier. It is extremely useful because it has very high

input resistance, high current gain, very small output resistance, and approximately unity

voltage gain. The high input resistance and low output resistance make the emitter

follower an ideal buffer between a high impedance source and a low impedance load. A

buffer is any circuit that keeps the source from being affected by a load. For example, a

common emitter amplifier with a 10kΩ output resistance could not provide very much

voltage gain to a 50Ω load resistor.

The following small-signal ac equivalent circuit that shown in figure 3.II.1 can be

used to calculate the gain, input resistance, and output resistance of the common collector

amplifier of figure 3.II.2. Note that the current-controlled current source in figure 3.II.1 is

pointing down, like that of the common emitter amplifier. However, the load in this case

is in parallel with the emitter resistor, so the output voltage is in phase with the input

voltage.

The open-circuit voltage gain, AV, of the emitter follower amplifier can be

calculated using the following equation (since RE is typically much larger than re, the

equation can be approximated as1):

1≈+

=Ee

E

VRr

RA

The input resistance, rin(stage) of the emitter follower amplifier can be calculated

using the following equation:

)(21)( LEestagein RRrRRr += β

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Figure 3.II.1

The output resistance, rO(stage) of the emitter follower amplifier can be calculated

using the following equation:

e

S

eEstageO rrRR

rRr ≈

+=

β

21

)(

3. II.4 Procedure

1. Use Digital Multimeter (DMM) to measure the β's of the transistors.

2. To measure the open-circuit voltage gain, AV, of the common collector amplifier,

connect the following circuit shown in figure 3.II.2:

3. With the signal generator's frequency set to 10 kHz, and VS = 100mVp-p. Measure and

record the peak-to-peak output voltage VO and the phase relationship between Vin and VO.

These values can be used to calculate the open-circuit voltage gain, AV.

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Figure 3.II.2

3. II.5 Questions

1. Calculate the dc emitter current IE and the internal emitter resistance re for the circuit of

figure 3.II.2.

2. Using the values obtained in question 1, draw the small-signal ac equivalent circuit for

the amplifier or figure 3.II.2.

3. Using the equivalent circuit from question 2, calculate the theoretical values for AV,

rin(stage), and rO(stage).

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Experiment (4):

Common Emitter Amplifier Design

• Design References:

1. Electronic Devices and Circuits by Salivahanan: Sections 5.1, 5.3, and 5.6.

2. Microelectronic Circuits by Sedra & Smith: Sections 4.8, and 4.10.

3. Lab website: www.psut.edu.jo/sites/eyad

Electronics LabTheory of ExperimentsExperiment 3

4.1. Objectives:

1. To design a common emitter amplifier using bipolar junction transistor (BJT),

and to study the characteristics of the design amplifier.

2. To study the impact of various bypass and coupling capacitors on the overall

performance of the common emitter amplifier.

4.2. Introduction:

The basic BJT amplifier circuit like the one shown in figure 4.2 can be designed

to exhibit various desirable characteristics. An important decision involved in designing

this amplifier is the choice of the operating point (Q-point). This operating point refers to

the amount of DC bias current that flows through the transistor. It also refers to the

resulting DC voltage across its junctions. The Q-point of such a circuit can be placed

anywhere on the DC load line, depending on the choice of the DC equivalent circuit

component values.

The location of the Q-point determines the distortion characteristics of the AC

signal. By properly locating the Q-point, the symmetrical peak-to-peak swing of the AC

collector current can be maximized. In general, the DC load line must bisect the AC load

line in order to allow the maximum amount of symmetrical swing of the collector current

as well as the maximum amount of undistorted voltage swing in the load resistor.

4.3. Theory:

The most important BJT small-signal configuration is the common emitter

amplifier. It is extremely useful because it has high voltage gain, high current gain,

moderate input resistance and moderate output resistance. The common emitter amplifier

will be used as the example in most general amplifier experiments in this book.

In many common emitter amplifiers, the emitter resistor is bypassed, by

connecting a capacitor in parallel with it. At high frequencies, the capacitor effectively

shorts the emitter resistor to ground, but at dc the capacitor is large impedance that does

not affect the dc biasing of the circuit. The purpose of the emitter bypass capacitor is to

increase the gain of the amplifier by eliminating ac degeneration. AC degeneration occurs

when there is a voltage present across the emitter resistor that is out of phase with the

output voltage.

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The small-signal ac equivalent circuit in figure 4.1 can be used to calculate the

gain, input resistance, and output resistance of the common emitter amplifier of figure 4.2.

The equivalent circuit does not show RE because it is assumed to be completely

bypassed (shorted to ground) by CE at the frequency of operation. Note that the current-

controlled current source in figure 4.1 is pointing down, unlike that of the common base

amplifier.

This means that the output voltage is negative with respect to the input voltage,

corresponding to a 180° phase shift. For this reason the common emitter amplifier is

referred to as an inverting amplifier.

The open-circuit voltage gain AV of the common emitter amplifier can be

calculated using the appropriate one of the following equations (the minus sign means

that the common emitter amplifier is an inverting amplifier):

With RE bypassed: e

C

e

c

C

in

O

Vr

R

r

rR

V

VA

−≈

==β

With RE unbypassed: E

C

Ee

c

C

in

O

VR

R

Rr

rR

V

VA

−≈

+

==β

Figure 4.1 The input resistance rin(stage) of the common emitter amplifier can be calculated

using the appropriate one of the following equations:

With RE bypassed: 21)( RRrr estagein β=

With RE unbypassed: 21)( ))(( RRRrr Eestagein += β

The output resistance, rO(stage) of the common emitter amplifier can be calculated

using the following equation:

C

c

CstageO Rr

Rr ≈=β

)(

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The loaded voltage gain from source-to-load VL/VS can be calcu1ated using the

following equation:

+

+=

)()(

)(

stageOL

L

V

stageinS

stagein

S

L

rR

RA

rr

r

V

V

4.3. Pre-Lab Assignment work:

• Design Topic:

Design a Common Emitter Amplifier circuit by using four discrete resistors (R1,

R2, RC and RE), and either 2N3904 or 2N2222 NPN transistors.

• Design Constraints:

Assume the following constraints:

1. DC power Supply is +15 V.

2. VBE for NPN transistor = 0.7 V.

3. β for NPN transistor = 200.

4. Coupling and bypass capacitors are 10µF.

• Design Specifications:

1. VE = 1.0 V.

2. IC = 1 mA.

3. VC = 0.68*VCC

4. Minimum open voltage gain bypassed is 100 V/V.

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4.4. Procedure:

1. Connect the amplifier circuit you designed. Add Capacitors C1, C2, and CE each

of these capacitors is 10µF. Make sure the positive polarity of these capacitors are

connected to the higher positive voltage in the circuit.

2. Measure the DC bias voltages on the base, emitter and collector. Compare the

measured voltages with the design and calculation values. Tabulate the measured

versus the calculated bias voltages.

VB VE VC

Measured values

Design values

3. With the signal generator's frequency set to 10 kHz, and VS = 20mVp-p. Measure

and record the peak-to-peak output voltage VO and the phase relationship between

Vin and VO. The open-circuit voltage gain AV is VO/Vin.

4. To measure the voltage gain from source-to-load, VL/VS of the common emitter

amplifier, connect RL = 1KΩ from output of the circuit to the ground.

5. With the signal generator's frequency set to 10 kHz, and VS = 30mVp-p. Measure

and record the peak-to-peak output voltage VL and the phase relationship

between Vin and VL. The voltage gain from source to load is VL /VS.

6. Disconnect the emitter bypass capacitor CE from the circuit designed, and repeat

procedure steps 3 and 5.

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Experiment (5):

OP-Amp Amplifiers Design

5.1 Reference

1. Microelectronic Circuits by Sedra & Smith: Chapter 2.

2. Analog Electronics: Devices, Circuits, and Techniques by Williams, Gerald E,

Chapter 8. Minneapolis/St. Paul. West Publishing Company, 1996.

3. Electronic Devices and Circuits: Sections 14.1 and 14.3.

5.2 Objectives

1. To design and measure the ac characteristics of the non-inverting op amp

configuration.

2. To design and measure the ac characteristics of the inverting op-amp

configuration and to observe the 180° phase shift.

3. To design and demonstrate the use of operational amplifiers for performing

mathematical operations-summation.

5.3 Discussion

The basic non-inverting op amp configuration is shown in figure 5.1. The

operational amplifier itself, within the triangle, has a very large open loop voltage gain, a

reasonably high Rin and a fairly low RO.

These are all desirable characteristics. Resistors Rl and R2 are feedback resistors

which generally improve the amplifier's characteristics at the expensive of voltage gain.

At the same time, the voltage gain is stabilized to a particular value, which is also a

desirable characteristic.

The op amp with feedback will have characteristics determined mostly by the two

external resistors. The characteristics of the non-inverting op amp are given in equations

5.1, 5.2 and 5.3.

3.5................................1

2.5.......................................0

1.5......................................

1

2 EqR

RA

EqR

EqR

V

O

in

+=

Ω=

Ω∞=

Sometimes an additional resistor is connected from (+) to ground in order to set

the input resistance to a specific value. A very common configuration of the non-

inverting op amp is the "buffer" amplifier used to isolate stages. The buffer is made by

replacing R2 in figure 5.1 with a short circuit, and replacing Rl with an open circuit.

Equation 5.3 will show that this will provide a voltage gain of exactly one.

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Again, the characteristics are determined largely by the external biasing resistors.

The characteristics of the inverting op amp are given in Equations 5.4, 5.5 and 5.6.

6.5...................................

5.5.......................................0

4.5........................................

1

2

1

EqR

RA

EqR

EqRR

V

O

in

−=

Ω=

=

When the first operational amplifiers were constructed, their primary function was

to perform mathematical operations in analog computers. These included summation,

subtraction, multiplication, division, integration, and differentiation. Figure 5.3 shows an

example of how an operational amplifier is connected to perform voltage summation. (In

this figure, an ac and a dc voltage are summed). In general:

++−= etcV

R

RV

R

RV in

in

F

in

in

F

O ...2

2

1

1

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5.4 Design and simulation Part:

1. Design the Non-Inverting Amplifier shown in figure 5.1. The voltage gain needed

for your design is 69V/V.

R1 R2

2. Design the Inverting Amplifier shown in figure 5.2. The voltage gain needed for

your design is -25V/V.

R1 R2

3. Design the summer amplifier shown in figure 5.3. The designed will be achieved

this equation:

VO = - (2.12*VS + 1*5VDC)

Where: VS=2Vp-p @ 1 KHz.

Rin1 Rin2 RF

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5.5 Procedure

• Design the Non-Inverting Amplifier:

1. Connect your designed circuit of figure 5.1 using an 8-pin LM741 op-

amp.

2. Using a 180kΩ sensing resistor, complete the amplifier measurements

required for Table 5.1. Use a generator frequency of 1 kHz.

Figure 5.1

Table 5.1 Amplifier Measurements

VG

Vin VOC VO=VL Phase shift

200mVp-p

@1 KHz

• Design the Inverting Amplifier:

3. Connect your designed circuit of figure 5.2. Using an 8-pin LM741 op-

amp.

4. Using a 39kΩ sensing resistor, complete the amplifier measurements

required for Table 5.2. Use a generator frequency of 1 kHz.

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Figure 5.2

Table 5.2 Amplifier Measurements

VG

Vin VOC VO=VL Phase shift

200mVp-p

@1 KHz

• Design the Summing Amplifier:

5. Connect your designed circuit shown in figure 5.3.

Figure 5.3

6. With VS adjusted to produce a 2Vp-p sine wave at 1 kHz, observe the

output voltage VO on an oscilloscope set to dc input coupling. Sketch the

output waveform. Be sure to note the dc level in the output.

7. Interchange the 5V dc power supply and the 2Vp-p signal generator.

Repeat procedure step 6.

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Experiment (6):

FREQENCY RESPONCE OF AMPLIFER

6. 1 Reference

Sections 10.1-10.3, 10.6, Electronic Devices and Circuits: Definitions and Basic

Concepts, Decibels and Logarithmic Plots, Series Capacitance and Low Frequency

Response, Frequency Response or BJT Amplifiers.

6. 2 Objectives

1. To measure the lower cutoff frequency of a common emitter amplifier.

2. To measure the lower cutoff frequencies due to each coupling and bypass capacitor.

3. To measure the upper cutoff frequency of a common emitter amplifier.

4. To measure the upper cutoff frequencies due to shunt capacitances.

6. 3 Discussion

Since the impedance of coupling capacitors increase as frequency decreases, the

voltage gain or a BJT amplifier decreases as frequency decreases. At very low

frequencies, the capacitive reactance of the coupling capacitors may become large

enough to drop some of the input voltage or output voltage. Also, the emitter bypass

capacitor may become large enough that it no longer shorts the emitter resistor to ground.

The following equation can be used to determine the lower cutoff frequency,

where the voltage gain drops 3dB from its mid-band value (0.707 times the mid-band AV):

1)(

11)(2

1)(

CrrCf

Sstagein +=

π

Where:

f1(C1) = lower cutoff frequency due to C1

C1 = input coupling capacitance

rin(stage) = input resistance of the amplifier

rS = source resistance

2)(

21)(2

1)(

CRrCf

LstageO +=

π

Where:

f1(C2) = lower cutoff frequency due to C2

C2 = output coupling capacitance

rO (stage) = output resistance of the amplifier

RL = load resistance

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ETH

ECr

Cf)(2

1)(1

π=

Where:

f1(CE) = lower cutoff frequency due to CE

CE = emitter bypass capacitance

rTH = Thevenin resistance parallel to the capacitor:

+=

β

SB

eETH

rRrRr

Where:

RB = parallel combination of all the input bias resistors

Provided that f1(C1), f1(C2), and f1(CE) are not close in value, the actual lower

cutoff frequency is approximately equal to the largest of the three.

The capacitive reactance of a capacitor decreases as frequency increases. This fact

can lead to problems when an amplifier is used for high-frequency amplification. A

transistor has inherent shunt capacitances between each pair of its terminals. At high

frequencies, these capacitances effectively short (shunt) the ac signal voltage. Therefore,

in high-frequency amplifiers, shunt capacitance must be extremely small.

In this experiment, artificial shunt capacitors will be installed in the amplifier

circuit because it is extremely difficult to measure the actual interelectrode capacitances

of the transistor. It is equally difficult to measure stray shunt-capacitance due to the

wiring of the circuit. Since the artificial capacitors are much larger than the real

capacitance already present, the parallel combination of real capacitance and artificial

capacitors is approximately equal to the value of the artificial capacitors.

The objective is to investigate the high frequency response of the amplifier to gain

insight into the problems associated with shunt capacitance, and to obtain practice

measuring the upper cutoff frequency of an amplifier.

The upper cutoff frequency is the larger of the two frequencies where the voltage gain of

the amplifier is -3dB or 0.707 times the mid-band value (the lower cutoff frequency is the

other frequency where this occurs).

6. I.4 Procedure

1. Use the DMM to measure the β of the transistor.

2. To measure the low frequency response of the common emitter amplifier, connect the

following circuit shown in figure 6.1:

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The plus (+) signs show the polarities or the electrolytic capacitors used in procedure-

steps 5-8):

Figure 6.1

3. With VS = 50mV p-p@10kHz, measure and record VL. This value can be used to

determine the mid-band voltage gain VL/ VS.

4. Now decrease the frequency of the signal generator to each frequency in Table 6.1

measuring the value of VL at each frequency. Make sure the output voltage from the

signal generator is constant. These values will be used to plot the low frequency response

of the amplifier.

5. By making two capacitors very large, the effects of those capacitors on the lower

cutoff frequency can be made negligible. The cutoff frequency due to the third capacitor

can then be measured. With this in mind, reconnect the circuit of figure 6.I.1 with the

following capacitor values (observe polarities as shown in figure 6.1):

C1= 0.1µf, C2 = 100µf, CE 100µf.

6. Making certain that VS remains at 50mVp-p, adjust the frequency of the signal

generator until the output voltage (and therefore the voltage gain) equals 0.707 times that

measured in procedure step 3. The frequency where this occurs is f1(C1).

7. Repeat procedure steps 5 and 6 to determine f1(C2), using the following capacitor

values:

C1 = 100µf, C2=0.22µf, CE= 100µf

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8. Repeat procedure steps 5 and 6 to determine f1(CE), using the following capacitor

values:

C1=100µf, C2=100µf, CE=4.7µf

6. 5 Questions

1. Using the results obtained of step 1, of the β of the transistor. Determine re. Then use

these values to calculate the mid-band ac parameters of the circuit in figure 6.1 ( rin(stage),

rO(stage) , VL /VS).

2. Calculate the values for VL /VS at each frequency in Table 6.1. Then plot these values

on log-log graph paper. Include asymptotic lines which show the break frequency due to

each capacitor. From this graph of frequency response, obtain the lower cutoff frequency

(-3dB point) and label the graph accordingly.

3. Ca1culate f1(C1), f1(C2), and f1(CE) for the common emitter amplifier. Compare these

with the 1ower cutoff frequencies measured in procedure steps 5-8.

4. Which capacitor had the most effect on the lower cutoff frequency? Compare the lower

cutoff frequency due to this capacitor with the overall cutoff frequency determined in

question 2. Comment and explain.

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Table 6.1

Frequency (Hz)

VL (Vp-p)

AV=VL/VS V/V

AV(dB) =20log(AV)

50

100

200

250

500

750

900

1k

1.5k

2k

5k

7.5k

10k

20k

50k

75k

100k

250k

500k

600k

700k

750k

800k

850k

900k

950k

1M

5M

7.5M

10M

12M

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Experiment (7): Multistage Amplifier

I. MULTISTAGE AMPLIFIER

7. I.1 Reference

Sections 11 .1-11.3, Electronic Devices and Circuits: Gain Relations in Multistage

Amplifiers, Methods of Coupling, RC Coupled BJT Amplifiers.

7. I.2 Objectives

1. To determine the overall voltage gain of cascaded common-emitter amplifiers.

2. To demonstrate the loading effect of cascading common-emitter amplifiers.

7. I.3 Discussion

Often in electronic amplifier systems, several amplifiers are cascaded in order to

furnish adequate gain. It is easy to see that the resulting gain of two cascaded ideal

amplifiers would be the product of the individual gains. However, since voltage sources

and amplifiers have output resistance, and amplifiers and loads have input resistance,

there are voltage divisions taking place between these stages or amplification.

Figure 7. I.1 shows a two-stage amplifier. AO1 and AO2 are the open-circuit (un-

loaded) voltage gains of each stage:

Figure 7.I.1

To calculate the overall gain of the multistage amplifiers, the product of the

individual open-circuit gains of each stage is reduced by the voltage divider at the input

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and the output of each stage. The following equation can be used to calculate the overall

gain of a two-stage amplifier.

+

+

+=

LO

L

O

iO

i

O

iS

i

S

L

Rr

RA

rr

rA

rr

r

V

V

2

2

21

21

1

1

7. I.4 Procedure

1. Use DMM to measure the β's of two transistors.

2. To measure the open-circuit voltage gain of a single stage, connect the following

common emitter amplifier circuit shown in figure 7.I.2:

Figure 7.I.2

3. With the signal generator set at 50mVp-p@1kHz, measure the no-load ac output

voltage VO as well as the phase shift of the output with respect to the input. This can be

used to determine the open-circuit unloaded voltage gain AO.

4. To demonstrate the effects on overall voltage gain of cascading two common emitter

amplifiers, make the following interconnection of two identical amplifiers (stages) shown

in figure 7.I.3:

5. With the signal generator set at 50mV p-p at 1 kHz, measure the output voltage VL

across the load resistor, as well as the phase shift with respect to the input voltage VS.

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Figure 7.I.3

7. I.5 Questions

1. Using the results of step 1, calculate the input resistance rin (stage), the output resistance

rO(stage), and the unloaded voltage gain (AO) of the two individual common emitter

amplifier stages. Compare the calculated voltage gain with the actual measured voltage

gain obtained in procedure step 3.

2. Using the results of question 1, calculate the overall gain from source-to-load VL/VS.

Compare the calculated gain with that measured in procedure step 5.

3. Explain the phase relationship of the output voltage VL with respect to the input

voltage VS as observed in procedure step 5.

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Experiment (7): Multistage Amplifier

II. FREQUENCY RESPONSE OF

MULTISTAGE AMPLIFIERS

7. II.1 Reference

Sections 11.1-11.3, Electronic Devices and Circuits: Gain Relations in Multistage

Amplifiers, Methods of Coupling, RC Coupled BJT Amplifiers.

7. II.2 Objectives

1. To measure the low frequency response of a two-stage common emitter amplifier.

2. To measure the lower cutoff frequency due to each coupling capacitor of the two-stage

common emitter amplifier.

7. II.3 Discussion

Whenever several amplifiers are RC coupled in order to furnish adequate gain,

there will be additional coupling capacitors affecting the lower frequency response. As

was the case with the single-stage amplifier, there is a lower cutoff frequency associated

with each coupling and bypass capacitor. The calculations for lower cutoff frequency are

the same as for the single-stage amplifier, except there are additional capacitors that must

be taken into account. In this experiment, no emitter-bypass capacitors will be used. This

will simplify the calculations for rin(stage) and VL/VS at mid-band, and it will reduce the

number of lower cutoff frequencies to be calculated.

Figure 7.II.1 shows the Thevenin equivalent of a two-stage amplifier. AO1 and

AO2 are the open-circuit (un-loaded) voltage gains of each stage. The capacitors C1, C2,

and C3 are coupling capacitors.

The following equations are used to calcu1ate the lower cutoff frequency due to

each coupling capacitor C1, C2, and C3. The lower cutoff frequency of a single-stage

amplifier:

32

31

221

21

11

11

)(2

1)(

)(2

1)(

)(2

1)(

CRrCf

CrrCf

CrrCf

LO

iO

iS

+=

+=

+=

π

π

π

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Where:

f1 (C1): is the cutoff frequency due to the input coupling capacitor

f1 (C2): is the cutoff frequency due to the coupling capacitor

between the amplifier-stages

f1 (C3): is the cutoff frequency due to the output coupling capacitor

Figure 7.II.1

7. II.4 Procedure

1. Use DMM to measure the β's of two transistors.

2. To measure the low frequency response of a two-stage RC coupled amplifier, connect

the following circuit shown in figure 7.II.2 (the plus (+) signs show the polarities of the

electrolytic capacitors used in procedure steps 5-to-8):

3. With the signal generator set to 50mVp-p@15kHz, measure the ac output voltage VL.

This value can be used to determine the mid-band voltage gain from source-to-load,

VL/VS.

4. Now decrease the frequency of the signal generator until the output voltage VL is 0.707

times the level measured in procedure step 3. The frequency where this occurs is the

lower cutoff frequency of the amplifier. Make a sufficient number of measurements from

15 kHz down to 50Hz as shown in Table 7.II.1 to use for graphing the low frequency

response of the amplifier.

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Figure 7.II.2

5. By making two capacitors very large, the effects of those capacitors on the lower

cutoff frequency can be made negligible. The cutoff frequency due to the third capacitor

can then be measured. With this in mind, reconnect the circuit of figure 7.II.2 with the

following capacitor values (observe polarities as shown in figure 7.II.2):

C1 = 0.1µf C2 = 100µf C3 = 100µf

6. Adjust the frequency of the signal generator until the output voltage (and therefore the

voltage gain) equals 0.707 times that measured in procedure step 3. The frequency where

this occurs is f1 (C1).

7. Repeat procedure steps 5 and 6 for f1 (C2), using the following capacitor values:

C1 = 100µf C2 = 0.0022µf C3 = 100µf

8. Repeat procedure steps 5 and 6 for f1 (C3), using the following capacitor values:

C1 = 100µF C2 = 100µF C3 = 0.01µF

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7. II.5 Questions

1. Use the values of β to calculate the ac parameters of the amplifier (rin(stage1), ro(stage1), rin(stage2), ro(stage2). and (VL/VS) of the entire two-stage common emitter amplifier.

2. Calculate the value of VL/VS for each measurement made in procedure step 4. Plot

these values on log-log paper. Add asymptotic lines to this graph and show the break

frequency due to each coupling capacitor. Use the asymptotes to verify that the gain falls

off 6dB/octave after the first break, 12dB/octave after the second, and 18dB/octave after

the third.

3. Calculate the theoretical values of fl(C1), f1(C2), and f1(C3) for the two-stage common

emitter amplifier of figure 7.II.2. Compare these with the lower cutoff frequencies

measured in procedure steps 5-8.

Table 7.II.1

Frequency (Hz)

VL (Vp-p)

AV=VL/VS

AV (dB)

100

250

500

750

1k

5k

10k

50k

75k

100k

250k

500k

750k

1M

5M

7.5M

10M

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Experiment (8):

Practical Exam

Experiments (1-7)

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Experiment (9):

DIRECT-COUPLED MULTISTAGE

AMPLIFIERS

9.1 Reference

Sections 11.1, 11.2, and 11.4, Electronic Devices and Circuits: Gain Relations in

Multistage Amplifiers, Methods of Coupling, Direct-Coupled BJT Amplifiers.

9.2 Objectives

1. To measure the open-circuit voltage gain of direct-coupled common emitter amplifiers.

2. To measure the open-circuit voltage gain of direct-coupled complementary common-

emitter amplifiers.

3. To demonstrate the use of direct-coupled amplifiers to amplify dc.

9.3 Discussion

In many applications a system must amplify either dc or a very low frequency

input voltage. For example, a measurement of outside temperature would show a nearly

sinusoidal variation with a positive peak in the early afternoon and a negative peak in the

early morning. A voltage waveform representing this variation would have a frequency of

about 11.6µHz. At a frequency this low, coupling capacitors would prevent any of the

waveform from passing through the amplifier. Therefore, direct-coupled amplifiers are

used.

The circuit shown in figure 9.1 is an example of a direct-coupled amplifier.

Notice that the dc collector voltage VC1 of the first stage is also the dc base voltage VB2 of

the second stage. Since the collector-to-base junction of an NPN transistor must be

reverse-biased to keep the collector voltage in the linear region of the output

characteristics, the collector voltage of Q2 must be more positive than the collector

voltage of Q1, after several stages of amplification, the collector voltage approaches the

supply voltage and the voltage swing of the output is limited.

To correct the problem of increasing collector voltages from one stage to the next,

the second stage can be changed to a complementary (PNP) device, as shown in

figure 8.2. Recall that the collector voltage of a PNP transistor must be more negative

than its base voltage. Therefore, the collector voltage of Q2 is less than the collector

voltage of Q1. Typically, direct-coupled amplifiers will consist of an NPN stage followed

by a PNP stage, etc.

For either the circuit in figure 9.1 or the circuit in figure 9.2, the no-load voltage

gain is calculated just as it is with RC coupled amplifiers. In this experiment, the large

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value of RE2 in both circuits makes the loading effect of the second stage on the first

negligible. Therefore, the following approximation can be used for the circuits in figures

9.1 and 9.2 (the output voltage of the circuit in figure 9.2 will be inverted):

21

21

EE

CC

VRR

RRA ≈

The following approximation can be used to calculate the loaded voltage gain

VL/VS of the circuits in figures 9.1 and 9.2:

+≈

2CL

L

V

S

L

RR

RA

V

V

9.4 Procedure

1. To demonstrate the direct-coupled common emitter amplifier, connect the following

circuit shown in figure 9.1:

Figure 9.1

2. Adjust the variable dc power supply connected to the base of Q1 until the input voltage,

VB1, is 1.50V dc. Measure and record all quiescent voltages on both transistors, including

VC2.

3. Increase the variable dc power supply until the input voltage VB1 is 1.60V dc. Measure

and record the corresponding voltage VC2. Decrease the variable dc power supply until

the input voltage VB1 is 1.40V dc.

Measure and record the corresponding voltage VC2. The overall voltage gain AV can be

found from ∆VC2/ ∆VB1, where ∆ means the change in.

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4. Connect a 10kΩ load to the circuit in figure 9.1 between the collector of Q2 and ground

and repeat procedure steps 2 and 3. The values obtained from these measurements can be

used to calculate the loaded voltage gain VL/VS.

5. To demonstrate the complementary direct-coupled common emitter amplifier, connect

the following circuit shown in figure 9.2:

Figure 9.2

6. Repeat procedure steps 2-to-4 for the circuit of figure 9.2.

9.5 Questions

1. Calculate the theoretical quiescent values of VC1 and VC2 when VBl = 1.5V in figure 9.1.

Compare these values with those measured in procedure step 2.

2. Using the change in output voltage and the change in input voltage obtained from

procedure steps 2 and 3. Calculate the overall no-load voltage gain of the circuit in figure

9.1. Compare this value to the theoretical no-load voltage gain AV, described in the

discussion section.

3. Using the results of procedure step 4, calculate the loaded voltage gain of the circuit in

figure 9.1. Compare this value to the theoretical loaded voltage gain, VL/VS, described in

the discussion section.

4. Repeat questions 1, 2, and 3 for the complementary direct-coupled amplifier in figure

9.2. Be careful to note that the emitter resistor RE2, is at the top or the figure.

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Experiment (10):

DIFFERENTIAL AMPLIFIER

10.1 Reference

Sections 12.2-12.4, Electronic Devices and Circuits, Differential Amplifier, Common

Mode Parameters, Practical Differential Amplifiers.

10.2 Objectives

1. To investigate the differential amplifier in the difference and common modes of

operation.

2. To determine the common mode rejection ratio (CMRR).

10.3 Discussion

Operational amplifiers are the most widely used electronic devices for linear

(non-digital) applications. The input stage to an op-amp is a differential amplifier. Most

differential amplifiers are constructed as integrated circuit, but to facilitate

experimentation, we will investigate a discrete version of the same circuit.

Differential amplifiers can be operated in either of two manners: the input signals

can be different, or the input signals can be identical. If the input signals are different, the

amplifier is said to be operating in its difference mode. This means that the output voltage

will be proportional to the difference in the two input signals. If the input signals are the

same, or the inputs are tied together, the amplifier is said to be operating in its common

mode.

Figure 10.1 shows a differential amplifier with small external emitter resistors

designed to compensate for any differences in the values of re of the two transistors.

The single and double-ended difference mode gains of the ideal differential

amplifier are:

221121

21

221121

1

2

EeEe

C

ii

OO

V

EeEe

C

ii

O

V

RrRr

R

VV

VVAendedDouble

RrRr

R

VV

VAendedSingle

+++

−=

−=→−

+++

−=

−=→−

The differential input resistance is:

)( 2211 EeEeid RrRrr +++= β

Where:

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rid: is the total ac resistance between the input terminals.

Figure 10.1

The following equations apply to operation of the differential amplifier in its

common mode when the two input signals are equal in magnitude and phase:

2

21

1

21

2

1

1

1

i

OO

i

OO

V

i

O

i

O

V

V

VV

V

VVAendedDouble

V

V

V

VAendedSingle

−=

−=→−

==→−

The most important benefit of the differential amplifier in common mode

operation is the elimination of noise that is present at both inputs. Ideally, any noise

voltage that is present at both inputs is cancelled out by the phase inversion of the two

sides of the amplifier. The common mode rejection ratio (CMRR) is a ratio of signal gain

to noise gain that is, how well the amplifier amplifies the wanted signal and cancels the

unwanted noise. The single ended. CMRR is a ratio of the single-ended difference mode

voltage gain to the single-ended common-mode voltage gain. The double-ended CMRR

is a ratio of the double-ended difference mode voltage gain to the double-ended common-

mode voltage gain. Typically, the CMRR is extremely high (75 to 100dB is not

uncommon).

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cm

d

dBA

ACMRR log20)( =

Where:

Ad: is the difference mode voltage gain

Acm: is the common mode voltage gain

10.4 Procedure

1. To match two transistors, use DMM until two transistors are found with very similar

values of β.

2. Using the matched transistors for Q1, and Q2, connect the differential amplifier circuit

in figure 10.2. Make sure that the two 10kΩ resistors connected to the differential

amplifier's collectors are closely matched also (no more than 5% deviation). Also

measure the maximum resistance of the potentiometer (across its outer terminals).

Figure 10.2

3. With Vi1 and Vi2 set to 0V (grounded), connect a digital voltmeter between the outputs

VO1 and VO2 so it will read dc volts. Now adjust the 200Ω potentiometer until the

voltmeter reads 0Vdc. This procedure is called balancing the differential amplifier.

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4. To determine the quiescent currents in the circuit, measure the dc voltage VRC across

each collector resistor and the voltage VRE across the emitter resistor of Q3.

5. Set Vi1 to 100mVp-p@1kHz and ground Vi2. Measure the ac voltage from the center

tap of the potentiometer to ground. Connect a dual-trace oscilloscope to observe and

measure the single-ended output voltages VO1 and VO2 with respect to ground. If the

oscilloscope has a difference mode setting, also measure the output difference voltage

(VO1-VO2). In each case note the phase relation with the input.

6. Set Vi2 to 100mVp-p@1kHz and ground Vi l. Repeat the measurements of procedure

step 5.

7. Using a single function generator set both Vi1 and Vi2 to 2Vp-p@1kHz. Repeat the

measurements of procedure step 5. The inputs may have to be increased above 2Vp-p if

the amplifier has an extremely small common mode voltage gain because the output

voltage may otherwise be too small to measure.

10.5 Questions

1. Using the dc voltage measurements made in procedure step 4, determine the collector

currents in each of the three transistors. Use these values to calculate the internal emitter

resistances re1 and re2 of Q1 and Q2, respectively.

2. Using the results of question 1, and the maximum resistance of the potentiometer

(which equals RE1+RE2), calculate the difference mode single-ended voltage gain with Vi1

set to 100mVp-p@1kHz and Vi2 set to 0V. Also calculate the differential voltage gain (or

double-ended voltage gain) using the same inputs. Compare these with the measured

values obtained in procedure step 5.

3. Calculate the value of Rid using the results of question 1 and the value for β.

4. using the results of procedure step 7, calculate the differential common mode gain and

calculate the CMRR in dB.

5. What is the purpose of the common emitter stage which has the differential amplifier

in its collector circuit?