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Atom [ Bohrs model ]

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Atom [ Bohrs model ]

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Molecule & Compound

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-

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Shells & Energy

--

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Less valance Electron = Conductivity

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Less valance Electron = Conductivity

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Less valance Electron = Conductivity

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Co-Valent Bonds

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Heat Energy Releases - Electrons

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Crystal Structure

-

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Neutral to Charge

Sodium, Chloride separately are neutral

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Group IV-A elements

-

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Band Theory

-

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Band Theory Solids [ Insulator ]

..

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Metals & Semiconductors

Band Separation

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Conductor & Insulator

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Finders

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Electro Static Charges

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Current

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Electrons & Holes

Thermal ReleaseIntrinsic Extrinsic

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Phosphorous Silicon Boron

Intrinsic / Extrinsic

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Phosphorous Silicon Boron

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Pure P & N Type

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Electron Hole Movements

-

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Electron Hole Movement

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Hole Current

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Electron Hole Flow Analogy

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V lt i P S l i El t

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Voltage is Pump Supplying Electron

& Recycle

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Prefixes

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P fi

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Prefixes

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b l

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Component Symbols

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Schematics

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E h

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Earth

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Voltage

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V lt

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Voltage

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VoltageRise - Drop

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R i t

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Resistors

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Potentiometers

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Carbon & Wire wound Resistors

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Ohms Law

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Ohms Law

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Capacitor & Time Constant

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Capacitor

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RC time Constant

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RC time Constant

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SEMICONDUCTORS

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SEMICONDUCTORS

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Silicon Structure

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Silicon Structure

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l i

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Hole Creation

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l i

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Hole Creation

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Current in Semiconductor

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Current in Semiconductor

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Electron & Hole Creation

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Electron & Hole Creation

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El H l M

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Electron Hole Movement

-

An increase in temperature of a semiconductorcan result in a substantial increase in the

number offree electrons in the material

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El t l S i d t

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Elemental Semiconductors

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Majority & Minority Carriers

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Majority & Minority Carriers

Ge and Si that show a reduction in resistance with

increase in temperature are said to have a negative

temperature coefficient

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Grown & Fused Junction Cut Bar

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Grown & Fused Junction Cut Bar

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Fine Metal Wire Cat Whisker

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Fine Metal Wire Cat Whisker

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PN Separate Joined

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PN Separate - Joined

Barrier Potential

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Junction Barrier Formation

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Junction Barrier Formation

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J ti & B i P t ti l

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Junction & Barrier Potential

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Forward Reverse Bias

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Diode Packages

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Diode Packages

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Junction Diode

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Junction Diode

-

19-04-2013 62

Ideal Diode

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Ideal Diode

Ideal diode is a SWITCH

conducting in only ONE direction

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Open Short Circuit

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Open Short Circuit

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Diode V I Characteristics

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Diode V-I Characteristics

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Diode V I Characteristics

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Diode V-I Characteristics

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Germanium vs Silicon

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Germanium vs Silicon

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Temperature Effects

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Temperature Effects

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Temperature Effects

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Temperature Effects

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DC[Static] /AC [Dynamic] Resistance

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[ ] / [ y ]

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DC[Static] /AC [Dynamic] Resistance

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[ ] / [ y ]

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Slope & Tangent..1

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Slope & Tangent..1

The derivative of a function at a point is equal to the

slope of the tangentline drawn at that point.

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Slope & Tangent..2

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Slope & Tangent..2

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Load Line

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Load Line

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Zero Output

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Problem

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Problem

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Peak Inverse Voltage -PIV

The maximum reverse-bias potential thatcan be appliedbefore entering the

Zener region is called the peak inverse

voltage (referred to simply as the PIV

rating) or the peak reverse voltage

(denoted by PRV rating).

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DIODE

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DIODE

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Rectifier DIODEs

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Rectifier DIODEs

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i d i

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Diode Operation

Forward & Reverse Bias

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Diode vs Valve

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Switch Equivalent

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Di d

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Diode

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Reverse Bias

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Depletion Region Expands

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Forward Bias

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Depletion region shrinks

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19-04-2013 85

Diode Current

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19-04-2013 86

Diode Current

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Diode Current

Thermal Voltage

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Knee Current

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Knee Current

mA

A

19-04-2013 88

Rectifier [ Half Wave ]

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Rectifier [ Half Wave ]

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Half wave Output

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19-04-2013 90

Negative Output

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egat e Output

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92

Transistors

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19-04-2013 93

Transistors

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19-04-2013 94

Reverse Bias -Minority Current

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19-04-2013 95

Junction Interaction

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19-04-2013 96

Closed Circuit

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19-04-2013 97

BE Forward BC Reverse Bias

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19-04-2013 98

BE Forward BC Reverse Bias

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BE Forward BC Reverse Bias

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19-04-2013 100

Current Directions

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Collected = Emitted Loss (Base)

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r- Parameter

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19-04-2013 102

Transistors

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19-04-2013 103

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Power Transistors

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Power Transistors

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RF Transistors

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RF Transistors

For High frequency Operations

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Transistor Manufacturing

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19-04-2013 107

Recombination at Base

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-

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NPN / PNP

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NPN / PNP

-

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PNP Biasing

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19-04-2013 110

Common Base

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19-04-2013 111

CB Input Characteristics

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19-04-2013 112

CB Output Characteristics

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19-04-2013 113

Gain Parameters

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19-04-2013 114

Transfer of Resistance

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19-04-2013 115

CE

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19-04-2013 116

CE Collector Characteristics Curves

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19-04-2013 117

CE

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19-04-2013 118

Cutoff ICBO , ICEO

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19-04-2013 119

Equation Example

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19-04-2013 120

Transistor Switch

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CE Parameters

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1 = +

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CE Parameters

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19-04-2013 123

CC

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19-04-2013 124

Transistor Operation Limit

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Power Dissipation =

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Transistors

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19-04-2013 126

Terminal Identification

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19-04-2013 127

Base Bias

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19-04-2013 128

TO-92 Package

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19-04-2013 129

Q2T2905

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Transistor Biasing

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=

=

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Problem Example

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19-04-2013 132

Saturationsaturation =levels reached their maximum values

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saturation =levels reached their maximum values.

highest saturation level is defined by the maximumcollector current

Saturation conditions are normally avoided because

the basecollector junction is no longer reverse-biased and the output amplified signal will be

distorted

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Fixed Bias

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19-04-2013 134

Load Line Analysis

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19-04-2013 135

Emitter Stabilized Bias

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I/P Impedance Increased

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Emitter Stabilized -2

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Sample Problem Ref PP 166

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Load Line for Emitter Stabilzed Bias

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19-04-2013 139

Voltage Divider Bias

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19-04-2013 140

Voltage DividerThevenins equivalent

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19-04-2013 141

Thevinins Equivalent

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19-04-2013 142

Voltage Divider Bias

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19-04-2013 143

Voltage Feedback Bias

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19-04-2013 144

Transistor Switching

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Transistor Switching

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Delay Time

Rise Time

Storage Time

Fall time

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Transistor Switching

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Delay Time

Rise Time

Storage Time

Fall time

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Base Bias Example

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19-04-2013 148

Self [Collector Feedback] Bias

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Self [Collector] Feedback Bias

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Self [Collector] Feedback Bias

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19-04-2013 151

Emitter Bias Internal REE

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Emitter Bias

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19-04-2013 153

Structure

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-

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Bipolar Junction Transistor

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BJT = Current Control

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19-04-2013 156

Transistor as Switch

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19-04-2013 157

Transistor Cut-off& Saturation

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19-04-2013 158

Base Input

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19-04-2013 159

Base Input

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19-04-2013 160

Base I/P

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Small base I/p

Large Emitter , Collector Output

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Transistor = back-to-back diodes

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Amplifiers

Benefit of Active device is ability to Amplify

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Benefit of Active device is ability to Amplify

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Amplifiers

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Output is more than Input

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Amplifiers

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Output is more than Input

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Amplifiers

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19-04-2013 166

Oscillators

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Hypothetical

19-04-2013 167

Amplifier Fundamental

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.

Biasing

19-04-2013168

Basic Amplifier

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Basic Amplifier

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19-04-2013 170

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Load Line

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19-04-2013 172

Linear Operation

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19-04-2013 173

Non-Linear Operation-Cutoff, Saturation

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19-04-2013 174

Too Large Input

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19-04-2013 175

DC & AC gains

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.

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Amplifier Cascading

One after another

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19-04-2013 177

Amplifier Coupling DC Blocking

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19-04-2013 178

Power Ratio & bel

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-

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Bel & Decibel [ dB ]

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19-04-2013 180

Amplifier Cascading

One after another

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19-04-2013 181

Power = V x I

-

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19-04-2013 182

Cascaded - dB

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-

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Bel & dB -

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Active Mode

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BE = Forward biasBC = Reverse Bias

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Typical Characteristic Curves

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Elementary Diode varying Resistor Model

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19-04-2013 187

Current Source Model

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19-04-2013 188

CE Amplifier

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19-04-2013 189

Load

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19-04-2013 190

Simple maths

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19-04-2013 191

Common Collector

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Common Collector

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CC Amplifier

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CC = Emitter Follower

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Output = Input 0.7 V Av = 119-04-2013 195

CC = Emitter Follower

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19-04-2013 196

Common Base Amplifier

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19-04-2013 197

CE-CB-CC Comparison

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CE-CB-CC Comparison

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Darlington Pair

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Darlington Pair

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19-04-2013 201

Darlington Arrangement

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19-04-2013 202

Darlington Application

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Cascode

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Amplifier Classification

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Cascading

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Cascading

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Cascading

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Cascaded RF Tuned Amplifier

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19-04-2013 209

Transistor Package Types

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19-04-2013 210

Differential Amplifier

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Differential Amplifier

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Differential Amplifier

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Differential Amplifier

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Differential Amplifier

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Differential Amplifier

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VC2 Reduced

VC1 - Increased19-04-2013 216

Single Ended Operation

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19-04-2013 217

Differential mode Operation

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19-04-2013 218

FET

FET

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FET

JFET -- Junction

IGFET - Insulated Gate [ MOS ]

MOS - Metal Oxide Semiconductor

P-MOS

N-MOSC-MOS = [ P & N ] - Complementary

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JFET

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FET = Field Effect

D

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19-04-2013 221

B

C

E S

G

Transistor & FET

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JFET

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FET = Source Drain - Gate

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FET = Source Drain - Gate

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Field Effect

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Field Effect

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=

IDSS is the maximum drain current for a JFET and is defined bythe conditions VGS =0 V and VDS = Vp19-04-2013 227

Field Effect

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19-04-2013 228

Field Effect Pinch Off

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19-04-2013 229

FET Characteristics

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FET is Voltage Controlled Resistor

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19-04-2013 231

FET vs Transistor

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FET Transfer Characteristics

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FET vs BJT

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FETs

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Depletion MOSFET

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Depletion MOSFET

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Depletion MOSFET

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Depletion MOSFET

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Enhancement MOSFET

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Depletion19-04-2013 240

Enhancement Operation

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Enhancement Characteristics

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Enhancement Characteristics

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Enhancement

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19-04-2013 244

VMOSVMOS FETs have a positive

temperature coefficient that will

combat the possibility of thermal

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Compared with planar MOSFETs,

VMOS FETs have reduced channel

resistance levels & higher current ,

power ratings

runaway.

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VMOS AdvantagesCompared with planar MOSFETs, VMOS FETs have

reduced channel resistance levels & higher current and

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power ratings

VMOS FETs have a positive temperature coefficient that

will combat the possibility of thermal runaway.

The reduced charge storage levels result in faster switching

times for VMOS construction compared to those for

conventional planar construction

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CMOS = C= n+p

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CMOS C = n+p

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19-04-2013 248

JFET

-

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19-04-2013 249

JFET N Channel

-

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JFET P Channel

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19-04-2013 251

FET Biasinggeneral relationships that can be

applied to the dc analysis of all FET

lifi

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amplifiers are

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FET Fixed Biasing

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FET Fixed Biasing

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FET- Self Bias

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FET- Self Bias

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FET- Voltage Divider Bias

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FET- Voltage Divider Bias

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FET Voltage Divider - Characteristics

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Feedback Bias

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FET Bias Summary

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FET Bias Summary

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FET Bias Summary

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JFET

-

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JFET

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19-04-2013 265

MESFET

Metal - Semiconductor

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IGFET [ MOSFET]

Insulated Gate

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Enhancement

Channel Created

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Enhancement Mode

Dotted Lines

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VMOSFET

-

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JFET Switch

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Bleeding Resistor

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FET Active Mode

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JFET VDS vs ID

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FET vs BJT

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Trans-conductance - gm

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IGFET - MOSFET

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FET Gate Voltage Control

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Less19-04-2013 279

X

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Compare N , P Channel

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Enhancement - Depletion

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19-04-2013 282

Superposition Rules1. Setting all dc sources to zero and replacingthem by a short-circuit equivalent

2 Replacing all capacitors by a short circuit

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2. Replacing all capacitors by a short-circuit

equivalent

3. Removing all elements bypassed by the short-

circuit equivalents introduced by steps 1 & 2

4. Redrawing the network in a more convenientand logical form

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BJT Modeling

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BJT Modeling Superposition THEOREM

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BJT Modeling Superposition THEOREM

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2-Port NetworksParameters -- Zi, Zo, Av, Ai

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Input Impedance

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Input Impedance

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Output Impedance

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Voltage Gain

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Current Gain

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Two Port Hybrid Model

h- Parameters

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h-parameter Model

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h-parameter Model

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Transistor Signal Analysis

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Transistor Signal Analysis - CB

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Transistor Signal Analysis - CE

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Transistor Signal Analysis - CE

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Transistor Signal Analysis - CE

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h Parameters

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Removing hr & ho

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Approximate

EquivalentModel

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CE & CB Hybrid Model

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Graphical meaning of h-params

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BJT Small Signal Analysis

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BJT Small Signal Analysis

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BJT Small Signal Analysis

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BJT Small Signal Analysis

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BJT Small Signal AnalysisUnbypassed Emitter Resistor

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2013 308

BJT Small Signal AnalysisUnbypassed Emitter Resistor

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BJT Small Signal AnalysisUnbypassed Emitter Resistor

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BJT Small Signal AnalysisUnbypassed Emitter Resistor

Input Impedance - Zi Output Impedance - Zo

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BJT Small Signal AnalysisUnbypassed Emitter Resistor

Voltage Gain Current Gain

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BJT Emitter Follower

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BJT Emitter Follower

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BJT Emitter Follower - Av

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BJT Emitter Follower - Ai

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BJT Small Signal Analysis - CB

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BJT Small Signal Analysis - CB

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BJT Small Signal Analysis - CB

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Approximate Hybrid Model CE,CB

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Fixed Bias - CE

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Fixed Bias - CE

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Fixed Bias - CE

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CB Approximate Hybrid Model

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CB Approximate Hybrid Model

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Complete Hybrid Model

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Complete Hybrid Model

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Complete Hybrid Model

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Complete Hybrid Model

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Complete Hybrid Model

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19-04-2013 331

FET Small Signal AnalysisThe gate-to-source voltage controls the

drain-to-source (channel) current of an FET.

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FET Small Signal AnalysisMathematical Definition ofgmThe derivative of a function at a point is equal to the slope

of the tangent line drawn at that point.

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FET Small Signal AnalysisMathematical Definition ofgm

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FET Small Signal Analysis

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19-04-2013 335

FET Equivalent Circuit

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FET Fixed Bias

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FET Fixed Bias

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FET Self Bias Rs bypassed

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FET Self Bias Rs bypassed

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FET Self Bias Rs Un-bypassed

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FET Self Bias Rs Un-bypassed

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FET Self Bias Rs Un-bypassed

rd Including

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FET Self Bias Rs Un-bypassed

rd Including

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FET Self Bias Rs Un-bypassed

rd Including

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FET Self Bias Rs Un-bypassed

rd Including

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FET Self Bias Rs Un-bypassed

rd Including

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FET Self Bias Rs Un-bypassed

rd Including

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FET Voltage Divider Bias

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FET Voltage Divider Bias

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FET Source Follower

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FET Source Follower

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FET Source Follower

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FET Source Follower

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FET Source Follower

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FET Common Gate

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FET Common Gate

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FET Common Gate

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FET Common Gate

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19-04-2013 359

ect o ource s oa L

Resistances

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Simplified Representation

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Effect of Rs & RL

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The loaded voltage gain of an amplifier is always less than

the no-load level

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AC Load Line with RL

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Effect of Rs

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Effect of Rs

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Combined Effect of Rs, RL

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Combined Effect of Rs, RL

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Combined Effect of Rs, RLEmiiter Follower

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Combined Effect of Rs, RLEmiiter Follower

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Combined Effect of Rs, RL For CE

Voltage Divider Bias

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Combined Effect of Rs, RLEmiiter Follower

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Combined Effect of Rs, RL CE Config

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Amplifier Cascading One after another

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Amplifier Coupling DC Blocking

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Amplifier Cascading One after another

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Cascaded - dB

-

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Amplifier Cascading

-

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Amplifier frequency Response

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Decibels

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Gain Figures & dB

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Frequency Response

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RC- Coupled

Transformer- Coupled19-04-2013 382

Frequency Response

Direct- Coupled

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ect Coup ed

Half Power Points19-04-2013 383

Frequency Response

Coupling Capacitor Effect

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At LF XL is more drop is More - therefore Vs to base is reduced

At Output side collector O/p is reduced to load

Phase in RC is leading at R Signal is reducedNet O/P and hence gain is Reduced

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Frequency Response

Bypass Capacitor Effect - LF

Bypass Capacitor Reactance is not Zero

Voltage gain is reduced at LF

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Frequency Response

Internal Capacitor Effect - LF

At LF Xc is more & acts as Open

No effect on Gain

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Miller Capacitance - HF

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Gain is reduced due to

Voltage divider effect

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Bandwidth & Normalized Gain

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Decibel vs Frequency 0 dB Ref

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Gain & dB Value - Voltage

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Gain & dB Value - Power

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Miller Effect Capacitance

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Miller Effect Capacitance

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Hi- Frequency Response

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Frequency Roll-off Response

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Frequency Roll-off Response

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Frequency Roll-off Response

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Frequency Roll-off Response

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Frequency Roll-off HF Response

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Total Frequency Response

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Hi- Frequency Response

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Hi-Frequency Response Miller Effect

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19-04-2013 402

Hi Frequency Response Miller-C

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Multistage Frequency Response

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Freq Response of Multistage

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Differential Amplifier

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Differential Amplifier

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Differential Amplifier

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VC2 ReducedVC1 - Increased

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Single Ended Operation

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Differential mode Operation

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Common Mode I/P Operation

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Differential Mode

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Common Mode

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Gain EquationsDifferential I/P

Common I/P

Opposite Inputs

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Same Polarity I/P

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Common Mode Rejection

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Capacitor Charge and Discharge

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Capacitor Charge and Discharge

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Capacitor Charge and Discharge

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Capacitor Charge and Discharge

RC circuit charge and discharge curves

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Capacitor Charge and Discharge

Exponential charge and discharge

Time constant ()

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RCteEv

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RC time Constant

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Capacitor Charge and Discharge Transposing the curve equation for t

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DC-AC Formulae - 1

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DC-AC Formulae - 2

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DC-AC Formulae - 3