Electronic Components for Use in Extreme Temperature ...ridl.cfd.rit.edu/products/cryogenic...
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Electronic Components for Use in Extreme Temperature Aerospace Applications Richard L. Patterson NASA Glenn Research Center M.S. 309-2 Cleveland, Ohio 44135 [email protected] Ahmad Hammoud ASRC Aerospace, Inc. NASA Glenn Research Center Cleveland, Ohio 44135 [email protected] Malik Elbuluk University of Akron Department of Electrical Engineering Akron, OH 44325 [email protected] Electrical power management and control systems designed for use in planetary exploration missions and deep space probes require electronics that are capable of efficient and reliable operation under extreme temperature conditions. Space-based infra-red satellites, all-electric ships, jet engines, electromagnetic launchers, magnetic levitation transport systems, and power facilities are also typical examples where the electronics are expected to be exposed to harsh temperatures and to operate under severe thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and, therefore, new parts must be developed or the conventional devices need to be modified. For example, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 °C. At the other end, built-in radiators and coolers render the operation of electronics possible under hot conditions. These thermal measures lead to design complexity, affect development costs, and increase size and weight. Electronics capable of operation at extreme temperatures, thus, will not only tolerate the hostile operational environment, but also make the overall system efficient, more reliable, and less expensive. The Extreme Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electronics suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices, including COTS parts, for potential use under extreme temperatures. These components include semiconductor switching devices, passive devices, DC/DC converters, operational amplifiers, and oscillators. An overview of the program will be presented along with some experimental findings. Abstract for the 12 th International Components for Military and Space Electronics Conference (CMSE 08), San Diego, California, February 11-14, 2008.
Transcript of Electronic Components for Use in Extreme Temperature ...ridl.cfd.rit.edu/products/cryogenic...
Electronic Components for Use in Extreme Temperature Aerospace Applications
Richard L. Patterson NASA Glenn Research Center
M.S. 309-2 Cleveland, Ohio 44135
Ahmad Hammoud ASRC Aerospace, Inc.
NASA Glenn Research Center Cleveland, Ohio 44135
Malik Elbuluk University of Akron
Department of Electrical Engineering Akron, OH 44325
Electrical power management and control systems designed for use in planetary exploration missions and deep space probes require electronics that are capable of efficient and reliable operation under extreme temperature conditions. Space-based infra-red satellites, all-electric ships, jet engines, electromagnetic launchers, magnetic levitation transport systems, and power facilities are also typical examples where the electronics are expected to be exposed to harsh temperatures and to operate under severe thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and, therefore, new parts must be developed or the conventional devices need to be modified. For example, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 °C. At the other end, built-in radiators and coolers render the operation of electronics possible under hot conditions. These thermal measures lead to design complexity, affect development costs, and increase size and weight. Electronics capable of operation at extreme temperatures, thus, will not only tolerate the hostile operational environment, but also make the overall system efficient, more reliable, and less expensive. The Extreme Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electronics suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices, including COTS parts, for potential use under extreme temperatures. These components include semiconductor switching devices, passive devices, DC/DC converters, operational amplifiers, and oscillators. An overview of the program will be presented along with some experimental findings. Abstract for the 12th International Components for Military and Space Electronics Conference (CMSE 08), San Diego, California, February 11-14, 2008.
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National Aeronautics and Space Administration
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Electronic Components for Use in Extreme Temperature Aerospace Applications
Richard L. Patterson NASA Glenn Research Center
MS 309-2 Cleveland, OH 44135
Ahmad Hammoud ASRC Aerospace Corp.
NASA Glenn Research Center Cleveland, OH 44135
Malik Elbuluk University of Akron
Dept. of Electrical Engineering Akron, OH 44325
12th International Components for Military and Space Electronics Conference San Diego, CA February 11-14, 2008
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OUTLINE
1. Deep Space Temperature Requirements and Applications
2. Extreme Temperature Electronics at NASA Glenn Research Center
3. Extreme Temperature Electronics Components and Circuits
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Temperature Data for Planetary Missions
Distance from Sun Spacecraft Temperature(Sphere, Abs. = 1, Emiss. = 1
Internal Power = 0)
Mercury 448 K 175 °C
Venus 328 K 55 °C
Earth 279 K 6 °C
Mars 226 K -47 °C
Jupiter 122 K -151 °C
Saturn 90 K -183 °C
Uranus 64 K -209 °C
Neptune 51 K -222 °C
Pluto (former) 44 K -229 °C
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Deep Space Electronics Temperature Requirements & Benefits
• Survive Deep Space Hostile Cold Environments• Eliminate Radioisotope and Conventional Heating
Units• Improve System Reliability by Simplified Thermal
Management• Reduce Overall Spacecraft Mass Resulting in Lower
Launch Costs
Requirements
Benefits of Low Temperature Electronics
• Electronics Capable of Low Temperature Operation• High Reliability and Long Life Time• Improved Energy Density and System Efficiency
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Low Temperature Electronics Program
Goals• Provide a technology base for the development of
electronic systems capable of low temperature operation with long lifetimes
• Characterize state-of-the-art components which operate at low temperatures
• Integrate advanced components into mission-specific low temperature circuits and systems
• Establish low temperature electronic database and transfer technology to mission groups
• Supported by the NASA Electronic Parts and Packaging Program (NEPP)
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Space Applications of Low Temperature Electronics
• James Webb Space Telescope (-235°C)• Lunar Pole Site (-235 °C)• Mars Surface (-120 °C to 20 °C)• Jupiter Probe (-151 °C)• Pluto Flyby (-229 °C)
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JAMES WEBB SPACE TELESCOPE
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High Temperature Electronics Program
Goals
• Characterize state-of-the-art components for operation at high temperatures
• Develop circuits and sensors for use in high temperature environments associated with jet engines and high temperature space missions
• Supported by the NASA Fundamental Aeronautics / Subsonic Fixed Wing Program (Distributed Engine Control Task)
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NASA Glenn Research Center Extreme Temperature Electronics Program
Facilities• Two environmental chambers
Programmable rate for thermal cycling and long term soakingSimultaneous and automated operationTemp range from –193 °C to +250 °C
• Ultra-low temperature environmental chamber for electronic testing to 20K
• Instrumentation to evaluate digital and analog circuits• Computer controlled CV/IV semiconductor device characterization • Inframetrix infrared camera system• Multiple high voltage, high current source measure units• Two programmable precision RLC instruments• Surface and volume resistivity chamber, film dielectric and
capacitance test fixture, breakdown voltage test cell• Passive components high-power test circuitry
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NASA Glenn Research Center Extreme Temperature Electronics Program
Products• Components
Magnetic Devices: Inductors & TransformersCapacitors & ResistorsSemiconductor SwitchesBatteriesTransducers
• CircuitsDC/DC ConvertersA/D ConvertersOscillatorsPWM Control CircuitsMotor Control
• SystemsEnergy StoragePower ConditioningCommunication & Control
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RESISTORS
Percent change in resistance at -190 °C versus resistor type
Resistor Type-5
0
5
10
15
20
25
30
Cha
nge
in R
esis
tanc
e (%
)
wirewoundmetal film
thin film thick filmcarbon film
carbo
n com
posit
ion
ceramic composition
power film
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DIODESForward voltage-current characteristics
of SiGe diodes as a function of temperature
0 0.4 0.8 1.2Forward Voltage (V)
0
1
2
3
4
Forw
ard
Cur
rent
(A)
20 °C-50 °C
-100 °C-150 °C
-195 °C
+85 °C
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Switching Characteristics of an SOI MOSFET Device at Various Temperatures
VGS = 4.0V
VGS = 5.0V
VGS = 7.0VVGS = 8.0V
VGS = 12.0V
VGS = 6.0V
0.0 0.5 1.0 1.5 2.0VDS, Drain-to-source Voltage (V)
(25 °C)
0
4
8
12
16
20
ID ,
Dra
in C
urre
nt (A
)
VGS = 5.0V
VGS = 7.0VVGS = 8.0V
VGS = 12.0V
VGS = 6.0V
0.0 0.5 1.0 1.5 2.0VDS, Drain-to-source Voltage (V)
(-185 °C)
0
4
8
12
16
20
ID ,
Dra
in C
urre
nt (A
)
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TRANSISTORS (Continued)
DC gain (IC / IB ) as a function of temperature for aSiGe Heterojunction Bipolar Transistor (HBT)
-200 -160 -120 -80 -40 0 40 80 120Temperature (°C)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
DC
Cur
rent
Gai
n (I C
/ IB)
SiGe HBTHBT-16-25 Pre Cycling
VCE = 8 VIB = 50 mA
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OPERTIONAL AMPLIFIER
Gain & phase of SiGe/SOI OP Ampversus frequency at various temperatures
1 10 100 1000 10000Frequency (kHz)
-16
-12
-8
-4
0
4
Gai
n (d
B)
+140 °C +125 °C +100 °C +25 °C -100 °C -150 °C -175 °C
1 10 100 1000 10000Frequency (kHz)
-200
-150
-100
-50
0
50
Pha
se (D
egre
es)
+140 °C +125 °C +100 °C +25 °C -100 °C -150 °C -175 °C
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VOLTAGE REFERENCE
Output voltage & load regulation ofX60008 reference as a function of temperature
-200 -150 -100 -50 0 50Temperature (°C)
2.492
2.494
2.496
2.498
2.5
2.502
2.504
Out
put V
olta
ge (V
)
VIN = 4.5 Volts VIN = 5.0 Volts VIN = 6.0 Volts VIN = 6.5 Volts
0 2 4 6 8 10Output Current (mA)
2.48
2.485
2.49
2.495
2.5
2.505
Out
put V
olta
ge (V
)
Temp = 20 °C Temp = -100 °C Temp = -195 °C
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Operation of Three Oscillatorsat Low Temperatures
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SILICON MEMS OSCILLATOR
Frequency & Duty Cycle of Oscillator Output Versus Temperature
-150 -100 -50 0 50 100Temperature (°C)
0.990
0.995
1.000
1.005
1.010
Freq
uenc
y (M
Hz)
-150 -100 -50 0 50 100Temperature (°C)
48
49
50
51
52
48.5
49.5
50.5
51.5
Dut
y C
ycle
(%)
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SILICON-ON-INSULATOR 555 TIMER
Waveforms of trigger (1), output (2), and threshold (3) signals
25 °C -195 °C
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Output Waveforms of a Pulse Width Modulation Controller at Room Temperature and -190 °C
Time (10 us/div)(a) Temperature = 25°C
Time (10 us/div)(b) Temperature = -190°C
(1 V/div) Reference Voltage (1 V/div) Reference Voltage
(1 V/div) CT Ramp Signal
(5 V/div) Output Voltage
(1 V/div) CT Ramp Voltage
(5 V/div) Output Voltage
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Output Voltages of Two Commercial DC/DC Converters at Various Temperatures
Effi
i(%
)
-200-180-160-140-120-100 -80 -60 -40 -20 0 20 40Temperature (°C)
0
1
2
3
4
Out
put V
olta
ge (V
)
36Vin/0.5Aout
18Vin/0.5Aout
36Vin/2.5Aout
18Vin/2.5Aout
-200-180-160-140-120-100 -80 -60 -40 -20 0 20 40Temperature (°C)
0
1
2
3
4
5
6
7
8
9
10
Out
put V
olta
ge (V
)
72Vin/0.5Aout
36Vin/0.5Aout
72Vin/4.0Aout
36Vin/4.0Aout
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Commercial-Off-the-Shelf 12-Bit Serial CMOS A/D Converter (Rated for Operation Between -40 °C & +85 °C)
Digital Outputs at Three TemperaturesFor Various Analog Inputs
Analog Input (V)
Digital Output (V) @ 25 °C
Digital Output (V) @ -100 °C
Digital Output (V) @ -190 °C
0 0.007 0.010 0.010
0.5 0.505 0.498 0.508
1 1.004 1.006 1.004
2 2.000 2.002 1.993
5 4.994 4.994 5.001
7.25 7.241 7.228 7.226
10 9.983 9.963 9.963
10.1 10.000 10.000 10.000
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Capacitors for Wide Temperature Operation
-200 -100 0 100 200Temperature (°C)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
Cap
acita
nce
(uF)
AVX 0.16 uFStacked NPO Ceramic, Rated to 125 °CType SM041A164KAN240100 kHz
-200 -100 0 100 200Temperature (°C)
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
Cap
acita
nce
(uF)
Presidio 0.1 uFStacked NPO Ceramic, Rated to 125 °CType HRS205NPO114J4N4100 kHz
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Resistors for Wide Temperature Operation
-200 -100 0 100 200Temperature (°C)
0
2000
4000
6000
8000
10000
12000
14000
Res
ista
nce
(Ohm
s)
Ohmite 10 kOhmsWirewound, Rated to 350 °C Type 93J10K100 kHz
-200 -100 0 100 200Temperature (°C)
0
2000
4000
6000
8000
10000
12000
14000
Res
ista
nce
(Ohm
s)
Caddock 10 kOhmsPrecision Film, Rated to 275 °CType MM177100 kHz
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Operational Amplifier for Wide Temperature Operation
1 10 100 1000 10000Frequency (kHz)
-30
-20
-10
0
10
Gai
n (d
B)
+200 °C +100 °C +25 °C -100 °C -190 °C
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Things To Remember
• BETTER COMPACTNESS• REDUCED WEIGHT• RELIABILITY• INCREASED EFFICIENCY
LOW TEMPERATURE ELECTRONICS CAN BE DESIGNEDFOR SPACE APPLICATIONS
IMPROVEMENTS DUE TO LOW TEMPERATURE ELECTRONICS
• DEEP SPACE MISSIONS• LUNAR, MARS• SATELLITES• CRYOGENIC INSTRUMENTATION
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Things To Remember (Continued)
CIRCUITS HAVE BEEN DESIGNED TO OPERATE OVER THE WHOLE TEMPERATURE RANGE BETWEEN -190 °C AND +200 °C
THERE ARE ON-GOING EFFORTS AT NASA GLENN RESEARCH CENTER TO DESIGN MORE COMPLEX CIRCUITS THAT WILL OPERATE AT EVEN HIGHER TEMPERATURES
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