EE143 – Ali Javey Section 5: Thin Film Deposition Part 2: Chemical Methods Jaeger Chapter 6.
EE143 – Ali JaveySlide 5-1 Section 2: Lithography Jaeger Chapter 2 Litho Reader.
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Transcript of EE143 – Ali JaveySlide 5-1 Section 2: Lithography Jaeger Chapter 2 Litho Reader.
EE143 – Ali Javey Slide 5-1
Section 2: Lithography
Jaeger Chapter 2
Litho Reader
EE143 – Ali Javey Slide 5-2
The lithographic process
EE143 – Ali Javey Slide 5-3
Photolithographic Process(a) Substrate covered with silicon dioxide
barrier layer(b) Positive photoresist applied to wafer
surface(c) Mask in close proximity to surface(d) Substrate following resist exposure and
development(e) Substrate after etching of oxide layer(f) Oxide barrier on surface after resist removal(g) View of substrate with silicon dioxide
pattern on the surface
EE143 – Ali Javey Slide 5-4
Photomasks - CAD Layout
• Composite drawing of the masks for a simple integrated circuit using a four-mask process
• Drawn with computer layout system
• Complex state-of-the-art CMOS processes may use 25 masks or more
EE143 – Ali Javey Slide 5-5
Photo Masks
• Example of 10X reticle for the metal mask - this particular mask is ten times final size (10 m minimum feature size - huge!)
• Used in step-and-repeat operation
• One mask for each lithography level in process
EE143 – Ali Javey Slide 5-6
Lithographic Process
EE143 – Ali Javey Slide 5-7
Printing Techniques
• Contact printing damages the mask and the wafer and limits the number of times the mask can be used
• Proximity printing eliminates damage
• Projection printing can operate in reduction mode with direct step-on-wafer
Contact printing
Proximity printing
Projection printing
EE143 – Ali Javey Slide 5-8
Contact Printing
wafer
hv
photoresist
Resolution R < 0.5m
mask plate is easily damagedor accumulates defects
PhotoMaskPlate
EE143 – Ali Javey Slide 5-9
Proximity Printing
wafer
hv
g~20m
exposed
Photoresist
R is proportional to ( g ) 1/2
~ 1m for visible photons,much smaller for X-ray lithography
EE143 – Ali Javey Slide 5-10
Projection Printing
hv
lens
wafer
P.R.
focal plane
~0.2 m resolution (deep UV photons)tradeoff: optics complicated and expensive
De-Magnification: nX
10X stepper4X stepper1X stepper
Diffraction
EE143 – Ali Javey Slide 5-11
EE143 – Ali Javey Slide 5-12
Aerial Images formed by Contact Printing, Proximity Printing and Projection Printing
EE143 – Ali Javey Slide 5-13
Photon Sources
14
Optical Projection Printing Modules Optical System:
illumination and lens
Mask: transmission and diffraction
Resist: exposure, post-exposure bake and dissolution
Wafer Topography: scattering
Alignment:
EE143 – Ali Javey Slide 5-15
Optical Stepper
wafer
scribe line
1 2
Imagefield
field size increaseswith future ICs
field size increaseswith future ICs
Translationalmotion
16
Resolution in Projection Printing
Minimum separation of a star to be visible.
f = focal distanced = lens diameter
EE143 – Ali Javey Slide 5-17
Resolution limits in projection printing
EE143 – Ali Javey Slide 5-18
point
Depth of Focus (DOF)
EE143 – Ali Javey Slide 5-19
EE143 – Ali Javey Slide 5-20
FieldOxide
Photo mask
Different photo images
Example of DOF problem
EE143 – Ali Javey Slide 5-21
( ) .
( )
1 0 6
22 2
lNA
want small l
DOFNA
want large DOF
m m
(1) and (2) require a compromise between and NA ! (1) and (2) require a compromise between and NA !
Tradeoffs in projection lithography
EE143 – Ali Javey Slide 5-22
Sub-resolution exposure: Phase Shifting Masks
Pattern transfer of two closely spaced lines
(a) Conventional mask technology - lines not resolved
(b) Lines can be resolved with phase-shift technology
EE143 – Ali Javey Slide 5-23
•A liquid with index of refraction n>1 is introduced between theimaging optics and the wafer.
Advantages1) Resolution is improved
proportionately to n. For water, the index of refraction at = 193 nm is 1.44, improving the resolution significantly, from 90 to 64 nm.
2) Increased depth of focus at larger features, even those that are printable with dry lithography.
Immersion Lithography
EE143 – Ali Javey Slide 5-24
Image Quality Metric: Contrast
Contrast is also sometimes referred as the Modulation Transfer Function (MTF)
Questions:
EE143 – Ali Javey Slide 5-25
How does contrast change as a function of feature size?
How does contrast change for coherent vs. partially coherent light?
EE143 – Ali Javey Slide 5-26
* simulated aerial image of an isolated line
Image Quality metric: Slope of image
EE143 – Ali Javey Slide 5-27
resistresist
substrate
resist
substrate
resist
Position x
Finitecontrast
Infinitecontrast
Optical image
The need for high contrast
EE143 – Ali Javey Slide 5-28
Resists for Lithography
• Resists– Positive
– Negative
• Exposure Sources– Light
– Electron beams
– Xray sensitive
EE143 – Ali Javey Slide 5-29
Two Resist Types• Negative Resist
– Composition:• Polymer (Molecular Weight (MW) ~65000)
• Light Sensitive Additive: Promotes Crosslinking
• Volatile Solvents
– Light breaks N-N in light sensitive additive => Crosslink Chains
– Sensitive, hard, Swelling during Develop
• Positive Resist– Composition
• Polymer (MW~5000)
• Photoactive Dissolution Inhibitor (20%)
• Volatile Solvents
– Inhibitor Looses N2 => Alkali Soluble Acid
– Develops by “etching” - No Swelling.
EE143 – Ali Javey Slide 5-30
Positive P.R. Mechanism
Photons deactivatesensitizer
polymer +photosensitizer
dissolvein developersolution
EE143 – Ali Javey Slide 5-31
Resist contrastQf
log
Positive Resisthv
mask
P.R.
100%
E1 ETexposurephotonenergy(log scale)
resist thickness remaining
(linearscale)
exposed part is removed
Q
Qf
Q0
EE143 – Ali Javey Slide 5-32
Negative P.R. Mechanism
hv => cross-linking => insoluble in developer solution.
hv
E1ET
remaining
photonenergy
after development
%
mask
Q0
Qf
EE143 – Ali Javey Slide 5-33
Positive vs. Negative Photoresists
• Positive P.R.: higher resolution aqueous-based solvents less sensitive
• Negative P.R.: more sensitive => higher exposure throughput relatively tolerant of developing conditions better chemical resistance => better mask material less expensive lower resolution organic-based solvents
EE143 – Ali Javey Slide 5-34
Overlay Errors
+
+
+
+
Alignmentmarksfrom previousmaskinglevel
wafer
alignmentmask
photomaskplate
EE143 – Ali Javey Slide 5-35
sisimm TTrR
T Tsi change of mask and wafer temp
coefficient of thermal expansion of
mask & Si
m
m si
, .
,
run-out error
waferradius
(1) Thermal Run-in/Run-out errors
EE143 – Ali Javey Slide 5-36
(2) Translational Error
referrer
image
n+
Al
p
Rotational / Translational Errors
(3) Rotational Error
EE143 – Ali Javey Slide 5-37
Overlay implications: Contacts
n+
SiO2 SiO2
Al“ideal”
p-Si
SiO2 SiO2
Al
p-Si
n+ “short”, ohmic contactAlignment error
SiO2
n+
SiO2
Al
Solution: Design n+ region larger than contact hole
EE143 – Ali Javey Slide 5-38
Overlay implications: Gate edge
Fox“Ideal”
poly-gate
S/D implantn+ Electrical
short
“With alignment error”
Solution: Make poly gate longer to overlap the FOX
EE143 – Ali Javey Slide 5-39
Total Overlay Tolerance
2 2total i
i
i = std. deviation of overlay error for ith masking step
total = std. deviation for total overlay error
Layout design-rule specification should be > total
EE143 – Ali Javey Slide 5-40
Standing Waves
substrate
PositivePhotoresist
hv
substrate
After developmentPositivePhotoresist.After developmentPositivePhotoresist.
Higher Intensity
Lower Intensity
Faster Development rate
Slower Development rate
EE143 – Ali Javey Slide 5-41
P.R.
Intensity = minimum whenn
mdx2
x d
m = 0, 1, 2,...
Intensity = maximum whenn
mdx4
m = 1, 3, 5,...
n = refractive index of resist
SiO2/Si substrate
Standing waves in photoresists
EE143 – Ali Javey Slide 5-42
Proximity Scattering
EE143 – Ali Javey Slide 5-43
Approaches for Reducing Substrate Effects• Use absorption dyes in photoresist• Use anti-reflection coating (ARC)• Use multi-layer resist process
1: thin planar layer for high-resolution imaging2: thin develop-stop layer, used for pattern transfer to 33: thick layer of hardened resist
(imaging layer)
(etch stop)
(planarization layer)
EE143 – Ali Javey Slide 5-44
Electron-Beam Lithography
V
312.
Angstroms
for V in Volts
Example: 30 kV e-beam => = 0.07 Angstroms
NA = 0.002 – 0.005
Resolution < 1 nm
But beam current needs to be 10’s of mA for a throughput of more than 10 wafers an hour.
EE143 – Ali Javey Slide 5-45
Types of Ebeam Systems
EE143 – Ali Javey Slide 5-46
Resolution limits in e-beam lithography
EE143 – Ali Javey Slide 5-47
The Proximity Effect
Richard Feynman
Dip Pen Nanolithography
Dip-Pen Nanolithography: Transport of molecules to the surface via water meniscus.
Dip-pen Lithography, Chad Mirkin, NWU
Patterning of individual Xe atoms on Ni, by Eigler (IBM)