Editorial Semiconductors: Materials, Physics, and...
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Editorial Semiconductors: Materials, Physics, and Devices Jiangwei Liu, 1 Hongyang Zhao, 2 Jinlong Liu, 3 Aurélien Maréchal, 1 and Wei Wang 4 1 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan 2 Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China 3 School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China 4 School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China Correspondence should be addressed to Jiangwei Liu; [email protected] Received 8 November 2016; Accepted 8 November 2016 Copyright © 2016 Jiangwei Liu et al. is is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. e Si, GaAs, and InP based semiconductor devices have improved our lives significantly during the last century. Wide-bandgap semiconductors, such as ZnO, SiC, GaN, Ga 2 O 3 , and diamond, are believed to be the next genera- tion semiconductors because of their excellent physical and chemical properties. ese semiconductors are promising candidates for fabrication of optoelectronic devices and semi- conductor electronics, such as light emitters, solar cells, solar blind detectors, high-power electronics, gas sensors, high- power microwave transistors, and microelectromechanical system (MEMS). In order to fabricate high-performance semiconductor electronic and optoelectronic devices, several research fields are being developed, such as high quality bulk or epitaxial layer growth, n-type and p-type doping, surface crystal quality improvement, interface quality of metal/semi- conductor or insulator/semiconductor junctions, optimiza- tion of device fabrication processes, and new application de- velopment for the semiconductor devices. During recent few years, significant progresses in semiconductor growth and device technology have been developed. It would be valuable and meaningful to realize the research situations of them. In this special issue, A. Maerz et al. gave a general description of the thermal behavior of vertical SiC metal- oxide-semiconductor field-effect transistor (MOSFET) under various driving and boundary conditions in case of a short- circuit event. e accurate prediction of the SiC MOSFET withstanding time for single fault events greatly influences the requirements for device protection circuits for these devices in power converter applications, like voltage-source- inverters or power-electronic-transformers. For this reason a thermal model based on the structural design, the physical dimensions of the chip, and material properties of 4H- SiC is proposed. R. Banchuin analyzed random variation in subthreshold floating-gate MOSFET (FGMOSFET). e analysis of random variation in the performance of FGMOS- FET which is an oſten cited semiconductor based electronic device, operated in the subthreshold region defined in terms of its drain current, has been proposed. C.-I. Lee et al. investigated noise parameters of silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) for different sizes in the breakdown region for the first time. Good agreement between experimental and simulated noise performance at breakdown is achieved for different sized SiGe HBTs. e presented analysis can benefit the RF circuits operating in the breakdown region. H. Lim et al. gave a review about the modeling of magnetic tunnel junction (MTJ). Modeling methods and models of MTJ characteristics are classified into two groups, macromodels and behavioral models, and the most important characteristics of MTJs. A. Hariya et al. demonstrated considerations of physical design and imple- mentation for wide regulation range MHz-level LLC reso- nant DC-DC converters with gallium nitride high electron mobility transistors. e physical parameters and size of the planar transformer are optimized by using derived equations and finite element method with Maxwell 3D. We hope this special issue could provide the readers with an overview of the recent achievements in the field of semiconductor based materials, physics, and devices. We also hope that this special issue could provide a valuable reference for semiconductor researchers. Hindawi Publishing Corporation Active and Passive Electronic Components Volume 2016, Article ID 4523960, 2 pages http://dx.doi.org/10.1155/2016/4523960
Transcript of Editorial Semiconductors: Materials, Physics, and...
EditorialSemiconductors: Materials, Physics, and Devices
Jiangwei Liu,1 Hongyang Zhao,2 Jinlong Liu,3 Aurélien Maréchal,1 andWeiWang4
1Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan2Department of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan 430073, China3School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China4School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, Shaanxi 710049, China
Correspondence should be addressed to Jiangwei Liu; [email protected]
Received 8 November 2016; Accepted 8 November 2016
Copyright © 2016 Jiangwei Liu et al. This is an open access article distributed under the Creative Commons Attribution License,which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
The Si, GaAs, and InP based semiconductor devices haveimproved our lives significantly during the last century.Wide-bandgap semiconductors, such as ZnO, SiC, GaN,Ga
2O
3, and diamond, are believed to be the next genera-
tion semiconductors because of their excellent physical andchemical properties. These semiconductors are promisingcandidates for fabrication of optoelectronic devices and semi-conductor electronics, such as light emitters, solar cells, solarblind detectors, high-power electronics, gas sensors, high-power microwave transistors, and microelectromechanicalsystem (MEMS). In order to fabricate high-performancesemiconductor electronic and optoelectronic devices, severalresearch fields are being developed, such as high quality bulkor epitaxial layer growth, n-type and p-type doping, surfacecrystal quality improvement, interface quality of metal/semi-conductor or insulator/semiconductor junctions, optimiza-tion of device fabrication processes, and new application de-velopment for the semiconductor devices. During recent fewyears, significant progresses in semiconductor growth anddevice technology have been developed. It would be valuableand meaningful to realize the research situations of them.
In this special issue, A. Maerz et al. gave a generaldescription of the thermal behavior of vertical SiC metal-oxide-semiconductor field-effect transistor (MOSFET) undervarious driving and boundary conditions in case of a short-circuit event. The accurate prediction of the SiC MOSFETwithstanding time for single fault events greatly influencesthe requirements for device protection circuits for thesedevices in power converter applications, like voltage-source-inverters or power-electronic-transformers. For this reason
a thermal model based on the structural design, the physicaldimensions of the chip, and material properties of 4H-SiC is proposed. R. Banchuin analyzed random variationin subthreshold floating-gate MOSFET (FGMOSFET). Theanalysis of random variation in the performance of FGMOS-FET which is an often cited semiconductor based electronicdevice, operated in the subthreshold region defined in termsof its drain current, has been proposed. C.-I. Lee et al.investigated noise parameters of silicon germanium (SiGe)heterojunction bipolar transistors (HBTs) for different sizesin the breakdown region for the first time. Good agreementbetween experimental and simulated noise performance atbreakdown is achieved for different sized SiGe HBTs. Thepresented analysis can benefit the RF circuits operating inthe breakdown region. H. Lim et al. gave a review aboutthe modeling of magnetic tunnel junction (MTJ). Modelingmethods and models of MTJ characteristics are classifiedinto two groups, macromodels and behavioral models, andthe most important characteristics of MTJs. A. Hariya et al.demonstrated considerations of physical design and imple-mentation for wide regulation range MHz-level LLC reso-nant DC-DC converters with gallium nitride high electronmobility transistors. The physical parameters and size of theplanar transformer are optimized by using derived equationsand finite element method with Maxwell 3D.
We hope this special issue could provide the readerswith an overview of the recent achievements in the field ofsemiconductor basedmaterials, physics, and devices.We alsohope that this special issue could provide a valuable referencefor semiconductor researchers.
Hindawi Publishing CorporationActive and Passive Electronic ComponentsVolume 2016, Article ID 4523960, 2 pageshttp://dx.doi.org/10.1155/2016/4523960
2 Active and Passive Electronic Components
Acknowledgments
We would like to thank all the contributing authors for thesubmission to this special issue.We also greatly appreciate thereviewers for their help in the review process for the specialissue.
Jiangwei LiuHongyang Zhao
Jinlong LiuAurelien Marechal
Wei Wang
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