Ece i Basic Electronics [10eln 15] Notes

Basic Electronics/10ELN15

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Syllabus

PART – A

Unit I: SEMICONDUCTOR DIODES AND APPLICATIONS:

p-n junction diode, Characteristics and Parameters, Diode approximations, DC load line,

Temperature dependence of p-n characteristics, AC equivalent circuits, Zener diodes Half-wave

diode rectifier, Ripple factor, Full-wave diode rectifier, Other full-wave circuits, Shunt capacitor -

Approximate analysis of capacitor filters, Power supply performance, Zener diode voltage

regulators, Numerical examples as applicable (T1-2.1,2.2,2.3,2.4:2.5,2.6,2.9,R1- 20.1, 20.2, 20.3,

20.4, 20.8; T1- 3.5, 3.6).

Recommended readings:

(T1) Electronic Devices and Circuits: David. A. Bell; PHI, New Delhi, 2004

Unit II: TRANSISTORS

Bipolar Junction transistor, Transistor Voltages and currents, amplification, Common Base,

Common Emitter and Common Collector Characteristics, DC Load line and Bias Point

Unit-III BIASING METHODS

Base Bias, Collector to Base Bias, Voltage divider Bias, Comparison of basic bias circuits, Bias

circuit design, Thermal Stability of Bias Circuits (Qualitative discussions

only).

(For Units II & III: T1- 4.1,4.2,4.3,4.4,4.5,4.6,5.1,5.2,5.3,5.4,5.5,5.7,5.9).



Unit-IV: OTHER DEVICES

Silicon Controlled Rectifier (S.C.R), SCR Control Circuits, More S.C.R applications; Unijunction

transistor, UJT applications, Junction Field effect Transistors(Exclude Fabrication and Packaging),

JFET Characteristics, FET Amplifications, Numerical examples as applicable (T1 -19.1, 19.2,

19.3, 19.7, 9.1, 9.2, 9.4)



Unit-V:AMPLIFIERS & OSCILLATORS

Decibels and Half power points, Single Stage CE Amplifier and Capacitor coupled two stage CE

amplifier(Qualitative discussions only), Series voltage negative feedback and Additional effects


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of Negative feed back(Qualitative discussions only), The Barkhausen Criterion for Oscillations,

BJT RC phase shift oscillator, Hartley ,Colpitts and crystal oscillator

( Qualitative iscussions only) Numerical problems as applicable.

(T1 - 8.2, 12.1, 12.3, 13.1, 13.7; R1-17.15, 17.16, 17.17, 17.18, 17.19)



Unit-VI:INTRODUCTION TO OPERATIONAL AMPLIFIERS

Ideal OPAMP, Saturable property of an OP AMP inverting and non inverting OPAMP circuits,

need for OPAMP, Characteristics and applications - voltage follower, addition, subtraction,

integration, differentiation; Numerical examples as applicable Cathode Ray Oscilloscope (CRO)

(T2 -11.1-11.8, 9.6)


(T2) Electrical and Electronics & Computer Engineering for Scientists and Engineers Second

Edition -K.A. Krishnamurthy & M.R. Raghuveer- New Age International Publishers (Willey

Eastern) 2001

Unit-VII: COMMUNICATION SYSTEMS

Block diagram, Modulation, Radio Systems, Superhetrodyne Receivers, Numerical examples as

applicable

(T2 - 13.1, 13.2, 13.4, 13.5)

NUMBER SYSTEMS: Introduction, decimal system, Binary, Octal and Hexadecimal number

systems, addition and subtraction, fractional number, Binary Coded Decimal numbers.


(T2) Electrical and Electronics & Computer Engineering for Scientists and Engineers Second

Edition -K.A. Krishnamurthy & M.R. Raghuveer- New Age International Publishers (Willey

Eastern) 2001

Unit-VIII :DIGITAL LOGIC

Boolean algebra, Logic gates, Half-adder, Full-adder, Parallel Binary adder.(For Number

Systems & Digital Logic: T2:.14.1 to 14.14)


(T2) Electrical and Electronics & Computer Engineering for Scientists andEngineers Second

Edition -K.A. Krishnamurthy & M.R. Raghuveer- NewAge International Publishers (Willey

Eastern) 2001


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REFERENCEBOOKS:

1. (R1). Electronic Devices and Circuits: Jacob Millman, Christos C. Halkias TMH, 1991 Reprint

2001

2. (R2) Electronic Communication Systems, George Kennedy, TMH 4th Edition

3. (R3) Digital Logic and Computer Design, Morris Mano, PHI, EEE

Question Paper Pattern: Student should answer FIVE full questions out of 8 questions to be set

each carrying 20 marks, selecting at least TWO questions from each part.


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INDEX SHEET

SL.NO TOPIC PAGE NUMBER

1 University syllabus 1 to 3

UNIT – 1: Semiconductor Diodes and Application 4 to 41

01 VI-characteristics

02 Diode approximation

03 DC load line

04 Zener diode

05 Half wave rectifier

06 Full wave rectifier

07 Filters

08 Zener voltage regulator

UNIT - 2: Transistors 41 to 56

01 Transistors basics

02 Operating regions

03 Transisitor configuration

04 CB , CE and CC configurations

05 Comparision

UNIT3: Biasing Methods 57 to 65

01 Base bias

02 Collector to base bias

03 Voltage divider bias

UNIT4:Other Devices 66 to 88

01 Silicon controlled rectifiers

02 SCR characteristics and parameters

03 SCR control circuits

04 JFET

05 UJT

UNIT5:Amplifiers and Oscillators 89 to 103

01 Decibel notation

02 Single stage CE amplifier

03 Two stage CE amplifier

04 Oscillator

08 Osc tank circuit

09 Colpitts Osc

10 Hartely Osc

11 Crystal Osc

UNIT-6:Operational Amplifier 104 to 115


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01 Ideal characteristics

02 Inverting amplifier

03 Noninverting amplifier

04 Voltage follower

05 Adder

06 Integrator

07 Differentiator

UNIT-7:Communication Systems and Number

Systems

116 to 156

01 Block diagram

02 Need for modulation

03 Types of modulation

04 AM analysis

05 FM analysis

06 Super Heterodyne receiver

07 CRO

08 CRT

09 Controls

10 Number System

11 Convertions

12 Complement method

13 BCD

UNIT-8:Logic Circuits 157 to 184

01 Properties

02 Logic gates

03 Universal gates

04 Half adder

05 Full adder

06 Logic families


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UNIT-1 : SEMICONDUCTOR DIODES AND APPLICATIONS

Introduction :

The conductivity is proportional to the concentration of free electron ‗n‘.For a good

conductor n should be very large of the order of 1028

electrons /cubic meter, for insulators it is

107electrons/cu. meter and for semiconductors it is in between these limits.

We know that Germanium and Silicon are the most important semiconductor semi-

conductor material, used in the fabrication of electronic devices. An insight into these material is

essential for proper understanding of device functioning. The crystalline structure of these

materials consists of tetrahedron form, and regularly repeated through out the material having

atoms on the vertex of each tetrahedron. In two dimensions this can be written as shown in the

figure below.

Silicon or Germanium

Valence electron

Covalent bond

We notice here that the valence electrons are bound to the atom in the form of a covalent

bond, leaving no electrons for conduction and hence the material has poor conductivity. In order

to establish the conduction this situation has to be disturbed. by the addition of impurities into the

material.

Donor and acceptor impurities.

When impurity atoms are added, these atoms will displace some of the semiconductor atoms in

the crystal lattice. The covalent bond gets disturbed and a new distribution of the crystalline

structure takes place depending on the valence electron contained in the impurity atom.

Donor impurity

The donor impurity contains 5 valence electrons, hence when added as impurity, one

electron will become free to move around with other four forming covalent bond with the

neighboring atoms. This material is called donor as it donates one electron. It is also called

pentavalent impurity because it contains 5 valence electrons.

The examples for pentavalent impurities are Antimony, Phosphorous and Arsenic.


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Addition of donor impurity increases the free electron concentration.The excess electron further

nullifies the holes, which are less in number by recombining and hence the semiconductor after

doping with donor impurity is called n-type semiconductor.

Acceptor impurities

A similar situation happens when an impurity atom with three valence electrons are added

but yielding a different situation. The impurity atoms get distributed throughout the lattice

structure altering the covalent bond as shown in figure below.The absence of electrons in one of

the covalent bond contributes a hole and becomes a positive charge carrier. So the hole formation

is the result of adding impurities having three valence electrons and are called trivalent impurity.

The trivalent impurity is also called acceptor because it accepts electrons from the crystal lattice.

These impurities are consequently known as acceptor or p-type impurities as they result in excess

holes. Hence when acceptor impurities are added to the semiconductor it becomes p-type, and

have holes as majority carriers for conduction. These holes dominate electrons which are

minority. The acceptor impurities are Boron, Gallium and indium. The effect of adding impurity

can be realized by noting the fact that when one atom of impurity is added to every 108 atoms of

Germanium, the conductivity changes by 12 times.

n-type semiconductor

In n-type semiconductor the conduction is due to electrons, hence electrons are called

majority carriers and holes are called minority carriers. Since the donor atom donates an electron

it becomes positive ion. This is shown in figure 1.1 below.

Fig1.1 : n-type semiconductor

The n-type has mobile free electrons indicated by small filled circles and the same number of

donor ions indicated by a circled positive charge.

p-type semiconductor

In p-type semiconductor, current conduction is due to excess holes and holes are called

majority carriers and electrons are called minority carriers and is shown in figure 1.2.

. Since an acceptor impurity has accepted an electron it becomes negative ion. The p-type has

mobile holes, and is indicated by unfilled circles and the same number of fixed negative acceptor

ions indicated by an encircled negative ion The p-type has mobile holes, and is indicated by

unfilled circles and the same number of fixed negative acceptor ions indicated by an encircled

negative ion.


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Fig 1.2 : p-type semiconductor

PN- junction

Semiconductor pn-junction is formed when a single crystal of semiconductor is added

with an acceptor impurity on one side and donor impurity on the other side and is shown in

figure1.3 below.In actual practice a small quantity of trivalent impurity is placed on n-type silicon

material and then it is heated to a high temperature in a quartz pipe to allow diffusion of the

impurity atoms into silicon. This process is known as diffusion. The other method of forming a

junction is grown junction and alloying (used for Germanium semiconductor).

Fig1.3 : PN- junction

The figure below shows a pn junction. The left side material is a p-type semiconductor having

acceptor ions and positively charged holes, the right material is n-type having positive donor ions

and free electrons. Since n-type has high concentration of electrons and p-type has high

concentration of holes and there exists a concentration gradient across the junction. Due to this,

charge carriers move from high concentration area towards low concentration area to achieve

uniform distribution of charge.This is shown in figure 1.4.

Fig 1.4: Charge distribution in PN- junction

In p-type excess holes move towards n-side similarly electrons from n-side move towards p-side,

this process is called diffusion and diffusion of charge carriers take place on either side of the

junction.This diffusion of charge carriers takes place in neibhouor hood of the junction

immediately after the junction is formed, and the rest of the material will be at equilibrium under

no bias condition. This is shown in figure 1.5.

Fig 1.5.: Depletion region formation


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When the migrating electrons diffuse into p-type and recombines with the acceptor atoms

on p-side, the acceptor ions accepts this additional electrons and becomes negatively charged

immobile ions, and the hole disappears and free electron becomes valence electron. Similarly

when hole diffuses into n-side they recombine with donor atom, this donor atom accepts

additional hole and they become positively charged immobile ion and electron disappears. These

ions are covalent bonded and hence cannot move around freely.

After diffusion, negative ions are formed on the p-side and positive ions are formed on the

n-side closer to the junction as shown in figure below. If the doping density is same on both sides

then large positive charge gets accumulated on n-side and large negative charge gets accumulated

on p-side of the junction, thus these charges at junction repel and do not allow further migration

of carriers from one side to the other side of the junction.

Fig1.6: Depletion region

Thus the uncovered ion in the neighborhood of the junction is depleted of mobile charges

and is called depletion region, the space charge region or the transition region. The thickness

of this region is of the order of 1micron (one millionth of a meter).

Study of pn-junction under following conditions:

a) No bias, b) Forward bias, c) Reverse bias

Biasing: Biasing is connecting a p-n junction to an external d.c. voltage.

a) No bias condition

no bias condition is already explained above and the other conditions are discussed below.


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Fig1.7: A pn junction under no-bias condition.

Under no bias condition, the positive charge on n-side repel the holes to cross from p ton

side, negative charge on p-side repel free electrons to enter from n to p side. Thus, a barrier is

setup against further movement of charge carriers, this is called potential barrier or junction

barrier. The potential barrier is of the order ofO.6V for silicon and O.2V for germanium. The

form of the potential energy barrier against flow of electrons from the n-side across the junction is

shown in fig, since the potential barrier of electron' is inverted compared to potential barrier of

holes in fig. this is due to the charge on an electron is negative. Similarly the potential barrier

against flow of holes from p-side across the junction is as shown in figure 6c, and the potential is

positivedue to charge on hole is positive.

Since the electrostatic potential is the negative integral ofthe function 'E:' (electric field

intensity), this variation constitute the potential barrier against further diffusion of holes and

electrons. Due to the presence of potential barrier (cut-in voltage) which in turn prevents further

movement ofmajority carriers across the junction. But the barrier promotes the minority carriers

in n-type (holes) that finds a path to pass directly into p-type material, due to negative potential in

the p-type near the junction. Similarly the minority carriers (electrons) in p-side pass directly

into n-type due to positive potential in n-type. Thus in the absence of an applied bias the net flow

of charge in anyone direction for a semiconductor is zero.

b) Forward bias: The forward bias condition is shown in figure 1.8 .The condition under forward

bias is explained below.


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Fig.1.8 Forward biasing of p-n junction

When an external voltage is applied to the junction, is in such a direction that it cancels the

potential barrier, thus permitting current flow, is called forward biasing

To apply forward bias, connect +ve terminal of the battery to p-type and –ve terminal to n-

type as shown in fig1.8 below.

The applied forward potential establishes the electric field which acts against the field due

to potential barrier. Therefore the resultant field is weakened and the barrier height is

reduced at the junction as shown in fig1.8.

Since the potential barrier voltage is very small, a small forward voltage is sufficient to

completely eliminate the barrier. Once the potential barrier is eliminated by the forward

voltage, junction resistance becomes almost zero and a low resistance path is established

for the entire circuit. Therefore current flows in the circuit. This is called forward current.

c) Reverse biasing : The reverse bias condition is shown in figure 1.9.The condition under

reverse bias is explained below.

Fig.1.9: Reverse biasing of p-n junction

When the external voltage applied to the junction is in such a direction, that the potential

barrier is increased, then it is called reverse biasing.

To apply reverse bias, connect –ve terminal of the battery to p-type and +ve terminal to n-

type as shown in figure below.


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The applied reverse voltage establishes an electric field which acts in the same direction as

the field due to potential barrier. Therefore the resultant field at the junction is

strengthened and the barrier height is increased as shown in fig1.9.

The increased potential barrier prevents the flow of charge carriers across the junction.

Thus a high resistance path is established for the entire circuit and hence current does not

flow.

Volt- Ampere characteristics(V-I) of a pn junction diode

The volt-ampere characteristics of the diode are indicated in the figure below.

Fig. V-I characteristics of p-n junction diode.

(i) Circuit diagram

(ii) Characteristics

The V-I characteristics of a semiconductor diode can be obtained with the help of the

circuit shown in fig.

The supply voltage V is a regulated power supply, the diode is forward biased in the

circuit shown. The resistor R is a current limiting resistor. The voltage across the diode is

measured with the help of voltmeter and the current is recorded using an ammeter.

By varying the supply voltage different sets of voltage and currents are obtained. By plotting

these values on a graph, the forward characteristics can be obtained.

It can be noted from the graph the current remains zero till the diode voltage attains the

barrier potential.

For silicon diode, the barrier potential is 0.7 V and for Germanium diode, it is 0.3 V. The

barrier potential is also called as knee voltage or cur-in voltage.

The reverse characteristics can be obtained by reverse biasing the diode. It can be noted

that at a particular reverse voltage, the reverse current increases rapidly. This voltage is

called breakdown voltage.

Therefore the value of forward drop of the voltage for silicon diode is typically 0.7V and that

for silicon is 0.3V.Because the diode reverse current (IR) is very much smaller than the forward

current hence the reverse characteristics are plotted with expanded current scales. For a Si diode

IR is normally less than 100na. and it is almost independent of the reverse bias voltage.Ir is largely

a minority charge carrier reverse saturation current. The increase in I due to increase in reverse

voltage is very small and is largely due to some minority carriers leaking along the junction

surface. For a diode the reverse current is typically less than 1/10,000 of the lowest normal

forward current. This quite negligible and may treated as negligible and hence the diode is

regarded as open circuit in this condition and hence is an open switch. When the reverse bias on


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the diode is increased then the device enters into reverse breakdown. This can destroy the diode

unless limited by an external resistance connected in series. This phenomenon is best made use of

in Zener diodes discussed later.

Diode current equation

The current in a diode is given by the diode current equation

I = I0( e V/ηVT –1)

Where, I------ diode current

I0------ reverse saturation current

V------ diode voltage

η------- semiconductor constan=1 for Ge, 2 for Si.

VT------ Voltage equivalent of temperature= T/11,600 (Temperature T is in Kelvin)

Note:- If the temperature is given in 0C then it can be converted to Kelvin by the help of following

relation, 0C+273 = K

Comparision of Si and Ge diodes: The characteristic of the Si diode is similar to those of Ge

diode, with some differences as depicted in the figure below.

Fig 1.10 : Comparison of characteristics of Silicon and Germanium diodes

The forward voltage drop of a Ge diode is typically 0.3V, compared to 0.7V for Si. For a Ge

device the reverse saturation current at 250

C may be around 1μA which is much larger than the

reverse saturation current for a Si diode which is around 50 nA. The temperature dependence of

the IR for Ge is more as compared to Si diode.

Finally the reveres breakdown voltage for Ge is lower than that for Si devices.

The lower forward voltage drop for Ge diodes compared to Si diodes can be a distinct advantage.

However ,the lower reverse current and higher reverse breakdown voltage of Si diodes make them

preferable to Germanium devices for most applications.


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The values of these quantities are normally listed on the diode data sheets provided by device

manufacturers. Some of the parameters can be determined directly from the diode characteristics.

The forward resistance calculated in the above example is static quantity and hence is called

Static Resistance and is represented by RF. It is a constant resistance of the diode at a particular

constant forward current. On the contrary the dynamic resistance is change in levels of current

and voltage.

Static Resistance : The static resistance of a diode is the resistance offered by a forward biased

diode at a particular point on its V-I characteristics.

Dynamic resistance of the diode is the resistance offered to changing levels of forward current.

The dynamic resistance is also known as the incremental resistance or ac resistance and is the

reciprocal of the slope of the forward characteristics beyond the knee as shown in the figure.

Fig1.11:Determination of diode dynamic resistance from the forward characteristics

Referring to the figure,

Where is the dynamic resistance

The dynamic resistance can also be calculated from the equation

DIODE APPROXIMATIONS

Ideal diode characteristics


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We know that a diode is one way device, offering low resistance when forward biased and a high

resistance when reverse biased. On the other hand an ideal diode (a perfect diode) would, zero

forward drop and infinite reverse resistance and thus behave electrically open circuit. Figure

below shows the characteristics of ideal diode.

Fig1.12 : ideal diode characteristics

Although an ideal diode does not exist, some situations demand such assumptions where diodes

can be assumed to be near ideal devices. In situations, for example, when supply voltages much

larger than the diode forward drop VF is used then the diode forward can be ignored without

introducing any serious error.

Also, the diode reverse current is normally so much smaller than the forward current that the

reverse current can be ignored. These assumptions lead to the near-ideal, or approximate

characteristics for Si and Ge diodes as shown in figure 6(b) and 6(c) below.

Example 1: A silicon diode is used in the circuit shown in Fig. 12. Calculate the diode current.

Fig.1.13 : Figure for example 1

Piecewise Linear Characteristic

When the forward characteristic of a diode is not available. A traight-line approximation, called

the piecewise linear characteristic, may be employed. To construct the piecewise linear

characteristic, VF is first. marked on the horizontal axis, as shown in Fig. 13. Then, starting at VF,


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a straight line is drawn with a slope equal to the diode dynamic resistance. Ex.2 demonstrates the

process.

Fig.1.14 : Piecewise Linear Characteristic of a diode

Example 2: Construct the piecewise-linear characteristic for a silicon diode that has a 0.25Ω

Dynamic resistance and a 200 mA maximum forward current.

Plot point B (on Fig. 13)at: IF = 200 mAand VF = (0.7V+ 0.05V) Draw

the characteristic through points A and B.

Diode equivalent circuit

The equivalent circuit for a device is a circuit representing its internal behavior.

In case of a diode the circuit is made up of a number of components, such as resistors and voltage

cells.

Figure 1.15 : Diode equivalent circuit

An accurate equivalent circuit for the diode includes the dynamic resistance (rd) in series with

diode forward drop VF as shown in the fig. above. This takes into account of the small variations

in VF that occur with change in forward current. With rd included the equivalent circuit represents

a diode with the type of piecewise characteristics. Consequently, the circuit is known as piecewise

linear equivalent circuit. This equivalent circuit when used in traditional circuit analysis gives

accurate results.


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DC Load line

It is a graphical analysis of a diode circuit, giving precise levels of diode current and voltage. It is

a straight line that illustrates all dc conditions that could exists within the diode circuit.

Figure 1.16 : Diode circuit and fig.15b calculating dc load line and Q point

Explanation of a DC load line:

Consider the diode circuit shown in figure below. Applying the KVL we get,

V = IF R1 + VF ------------------------------------------- 1

When IF=0, in eqn.1 we get V= VF and

When VF =0 in eqn.1 we get V= IFR or IF =V/R

Plotting these two conditions as shown in fig.1.16 , that is identifying point A equal to V/R and

point B equal to VF and drawing line AB which represents the dc load line and represents all dc

conditions that could exist within the circuit.

The Q point: It is the point of intersection of the diode forward characteristics with the load line

The dc load line is explained in the figure above. There is only one point on the dc load line where

the diode voltage and current are compatible with the circuit conditions.

Dc load line analysis

Figure 1.16 shows graphical representations of dc load line drawn on the diode forward

characteristics. This is a straight line that illustrates all dc conditions that could exist within the

circuit.

The analysis can best be made by taking a practical example.

Example 3 : Draw the dc load line for the circuit in Fig. 1.16(a). The diode forward characteristic

is given in Fig. 1.16(b).

Solution :

Substitute IF = 0 into Eq. 1,


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Now substitute Vr = 0 into Eq. 1,

The power dissipation

The power dissipated in a diode is simply calculated as the product of terminal voltage

of the diode multiplied by the current flowing through the diode

PD=VFIF, where PD is the power dissipated in the diode

Device manufacturer specify maximum power dissipation for each type of diode. If the specified

value of power is exceeded at higher temperature, the diode will get destroyed either by becoming

open or short due to overheating.

De-rating of diodes

The power dissipation in a diode is calculated as the product of voltage across the device

and the current through the device.

i.e. PD=VF IF in watts

The diode manufacturer specifies in the data sheet, the maximum power that can be dissipated by

the device under normal operation. If the specified level is exceeds, then device is over heated and

may get damaged.A typical derating graph is shown in figure 16.

Fig 1.17: typical diode de-rating graph.

The maximum power that can be dissipated is specified for an ambient temperature of 25 C, if the

temperature of the device exceeds maximum power dissipation then it must be derated.The

maximum power dissipation for any temperature can be read from the graph provided by the

manufacturer,and is shown in figure below.The derating factor defines the slope of power


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dissipation versus temperature and is shown in figure 16. The derated power at P2 can be calculated as

follows:

Diode ac equivalent circuit

We have studied earlier the dc equivalent circuit of a diode; the behavior of the diode for ac

voltage is discussed below.

Junction capacitance

The depletion region of a pn-junction is a layer which is depleted of charge carriers situated

between two blocks of low resistance material and results in a capacitor. This capacitance is

referred to as the depletion layer capacitance (Cd).This can be calculated from the equation of a

parallel plate capacitor if the junction dimensions are known. Typically its value is around 4to

10pF.

There are two types of capacitances exists in the diode when it is subjected to alternating voltage.

They are:

Fig1.18:

a) Diffusion capacitance –Cd ; (capacitance of the forward biased junction)

b) Depletion capacitance- Cj (capacitance of the reverse biased junction)

a) Diffusion capacitance:

When a pn-junction is forward biased, the majority carriers on p-side which is holes diffuse

into n-side. Similarly, from n-side the majority carriers which are electrons diffuse into p-side.

resulting in decrease of depletion region. If the applied voltage increases then the

concentration of carriers increases, resulting in capacitance.

Fig 1.18(a):Diode capacitances,fig.1.18(b) shows capacitance under forward bias.

Therefore the diffusion capacitance is defined as the rate of change of carriers with external

applied ac voltage.

i.e. Cd=dQ/dV

The diffusion capacitance is proportional to forward current IF and the practical value varies from

nF to pF.

b)Depletion capacitance

This is the capacitance of the reverse biased junction. When pn-junction is reverse biased, the

majority carriers move away from the junction resulting in wider depletion region. The p-region

and the n- region acts as the metal plates of capacitor with the depletion layer acting as dielectric

material resulting in capacitance. and this capacitance is called’ Depletion capacitance’. If the


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reverse voltage, increases, the width of the depletion layer also increases, hence capacitance

decreases. This capacitance is also called junction capacitance or transition capacitance.

Fig 1.19:Diode capacitances,fig.1.19(a) shows capacitance under reverse bias.

AC equivalent circuit of a diode

The ac equivalent circuit is the modification of the dc equivalent circuit discussed earlier and

is shown in the figure 18a,b,c, below.

Fig 1.20:Diode capacitance equivalent circuits

When the pn-junction is reverse biased, the equivalent circuit consists of a voltage cell

representing cut-in voltage in series with dynamic resistance rd. The whole circuit is a

combination of the above parameters connected in parallel with diffusion capacitance and is

shown in figure below. Similarly the equivalent circuit of a pn-junction under reverse bias is

represented by the reverse bias resistance Rr in parallel combination with depletion

capacitances shown in figure.

Reverse recovery time

The presence of the junction capacitances, affects the switching characteristics of the diode. Most

diodes switch quickly into forward biased condition, however, there is longer turn off time due to

junction diffusion capacitance.

Figure 1.21below illustrates the effect of a pulse on the diode forward current. When the pulse

switches from positive to negative, the diode conducts in the reverse direction instead of

switching off. The reverse current (Ir) initially equals the forward current (IF), then it gradually

decreases towards zero. The high level of reverse current occurs because, at the instant of reverse

bias there are charge carriers crossing the junction depletion region and these must be removed.


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Fig 1.21:Diode reverse recovery time

Typical values of reverse recovery time for switching diodes ranges from 4ns to 50ns. Figure

below shows that, to keep the diode current to a minimum, the fall time (tf) of the applied voltage

pulse to the must be much larger than the diode reverse recovery time.

The reverse recovery time (trr),is the time required for the current to decrease to the reverse

saturation level.

Typically

tf (min)=10 trr.

Breakdown mechanism in diode :

Generally there are two types of mechanisms which give rise to the breakdown of a pn-junction

when operated under reverse bias. One is called the avalanche breakdown and the other is called

zener breakdown

Avalanche breakdown

Consider a situation in which a thermally generated carrier (part of reverse saturation current)

falls down the junction barrier and acquires energy from the applied potential. This carrier

collides with the crystal ion and imparts sufficient energy to disrupt a covalent bond. In

addition to the original carrier, a new electron-hole pair has now been generated. These

carriers may also pick up sufficient energy from the applied field, collide with another crystal

ion, and create still another electron-hole pair. Thus each new carrier may, in turn, produce

additional carriers through collision and the action of disrupting the bonds. This cumulative

process is referred to as avalanche multiplication It results in large reverse currents, and the

diode is said to be in the region of avalanche breakdown. A lightly doped pn junction has a

tendency to widen the depletion region under reverse bias, and enter into avalanche

breakdown.

Zener breakdown

In this kind of breakdown it is possible to initiate breakdown through a direct rupture of the

bonds. The field intensity increases as the impurity concentration increases, for a fixed

applied voltage Because of the existence of the electric field at the junction, sufficiently

strong force may be exerted on a bound electron by the field to tear it out of its covalent bond.

The new hole electron pair which is created increases the reverse current. This process is

called Zener breakdown. Note this process does not involve collision of carriers with the

crystal ions as does in avalanche multiplication.


SJBIT/ECE Dept

Zener diode is heavily doped and is designed to operate under reverse bias condition. Under

this condition it found that the zener breakdown occurs at a field of approximately

2*107V/m.This value is reached at voltages below about 6V for heavily doped diodes.

For lightly doped diodes the breakdown voltage is higher, and avalanche multiplication is the

predominant effect.

Due to heavy doping of p and n regions, the depletion width is very small and for an applied

reverse bias of 6V or less, the electric field across the depletion region becomes very high in

the order of 2*107V/m,resulting breakdown is in the range of 5 to 8V

Key point :For a zener diode the p and n layers of the diode is heavily doped and hence the

mechanism of breakdown is zener breakdown.

For a regular diode the p and n layers of the diode is lightly doped and hence the mechanism

of breakdown is avalanche breakdown.

Zener diode

The zener diode is a pn-junction silicon diode which is heavily doped and designed to operate

under reverse bias condition, these diodes for their operation depends on the reverse

breakdown. When once the diode breaks down the voltage across the diode remains constant,

converting the excess voltage into current and thus maintaining the voltage across it constant,

hence these diodes are very useful as voltage reference or constant voltage devices.

Fig 1.22 :Zener diode symbol

Diodes designed to operate under reverse breakdown are found to be extremely stable over

wide range of current levels, but maintaining voltage across the device constant. The popular

voltage range for use in electronic circuits is from 2.4V to 15V, with currents less than

100mA.The desired amount of zener breakdown VZ can be achieved by controlling the

doping during the manufacture of diodes.

The zener diode when operated under forward bias has the characteristics similar to ordinary

diodes. In the zener diode symbol the direction of the arrow continues to indicate the

conventional current direction under forward bias condition


SJBIT/ECE Dept

2.9 Zener Diode characteristics

The reverse voltage characteristics of a semiconductor diode including the breakdown region is

shown below.

Fig.1.23: Zener diode characteristics

Zener diodes are the diodes which are designed to operate in the breakdown region. They are also

called as Breakdown diode or Avalanche diodes.

Half wave diode rectifiers RECTIFIERS

“Rectifiers are the circuit which converts ac to dc”

Rectifiers are grouped into two categories depending on the period of conductions.

1. Half-wave rectifier

2. Full- wave rectifier.

Half-wave rectifier

The circuit diagram of a half-wave rectifier is shown in fig. 22 below along with the I/P and O/P

waveforms.


SJBIT/ECE Dept

Fig. 1.24 Half wave rectifier, fig-a half wave rectifier circuit, fig-b when diode is

conducting and, fig-c, when diode is not conducting.

The transformer is employed in order to step-down the supply voltage and also to prevent

from shocks.

The diode is used to rectify the a.c. signal while , the pulsating d.c. is taken across the load

resistor RL.

During the +ve half cycle, the end X of the secondary is +ve and end Y is -ve . Thus ,

forward biasing the diode. As the diode is forward biased, the current flows through the

load RL and a voltage is developed across it.

During the –ve half-cycle the end Y is +ve and end X is –ve thus, reverse biasing the

diode. As the diode is reverse biased there is no flow of current through RL thereby the

output voltage is zero.

The waveforms of a half wave rectifier is shown in figure 1.25 when diode is conducting and

diode is not conducting.


SJBIT/ECE Dept

Fig. 1.25: Waveforms of a half wave rectifier

From the circuit it is clear that


SJBIT/ECE Dept


SJBIT/ECE Dept

We get,


SJBIT/ECE Dept

The efficiency of rectification is the ratio of the output power to the input power, but in rectifiers

it is defined as ratio of output DC power to the input AC power.


SJBIT/ECE Dept


SJBIT/ECE Dept

It is defined as the ratio of the RMS voltage across output to the average dc component.


SJBIT/ECE Dept

The PIV rating of the diode is given by manufacturer and the diode should be operated below its

PIV.If the max. voltage across the secondary of the transformer exceeds PIV of the diode then the

diode will get damaged.

For HWR the PIV under reverse bias condition is Vm.

Advantage and disadvantages of HWR.

Advantage: 1.The circuit is simpler and requires only one diode.

2. PIV of the diode is only Vm.

Disadvantages: 1. The ripple is more and hence the ripple factor is also more(12%)

2 Efficiency is very low.(40.6%)

Low TUF (28.7%


SJBIT/ECE Dept

Full-wave rectifier

Full-wave rectifier is of two types

1. Centre tapped full-wave rectifier

2. Bridge rectifier

Centre tapped full –wave rectifier

Fig. 1.26 Centre tapped full-wave rectifier

Fig. 1.27 Full wave rectifier, fig-a full wave rectifier circuit, fig-b when diodes are conducting and, fig-c,

when diode s are not conducting.

The circuit diagram of a center tapped full wave rectifier is shown in fig. 1.26 above. It

employs two diodes and a center tap transformer. The a.c. signal to be rectified is

applied to the primary of the transformer and the d.c. output is taken across the load RL.


SJBIT/ECE Dept

During the +ve half-cycle end X is +ve and end Y is –ve this makes diode D1 forward

biased and thus a current i1 flows through it and load resistor RL.Diode D2 is reverse

biased and the current i2 is zero.

During the –ve half-cycle end Y is +Ve and end X is –Ve. Now diode D2 is forward biased

and thus a current i2 flows through it and load resistor RL. Diode D1 is reversed and the

current i1 = 0.

Advantages

Efficiency is high, (81.2%).

Low ripple, ripple factor is 48.2%.

Requires only two diodes.

Disadvantages

Since, each diode uses only one-half of the transformer secondary voltage the d.c. output

is comparatively small.

The diodes used must have high Peak-inverse voltage, PIV=2Vm.

Requirement of a special-centre tapped- transformer

Bridge rectifier

(i)

Vout

D1D3 D2D4 D1D3

t

Fig.1.28 Full wave bridge wave rectifier (i) Circuit diagram (ii) waveforms.

The circuit diagram of a bridge rectifer is shown above. It uses four diodes and a

transformer.


SJBIT/ECE Dept

During the +ve half-cycle, end A is +ve and end B is –ve thus diodes D1 and D3 are

forward bias while diodes D2 and D4 are reverse biased thus a current flows through diode

D1, load RL ( C to D) and diode D3.

During the –ve half-cycle, end B is +ve and end A is –ve thus diodes D2 and D4 are

forward biased while the diodes D1 and D3 are reverse biased. Now the flow of current is

through diode D4 load RL ( D to C) and diode D2. Thus, the waveform is same as in the

case of center-tapped full wave rectifier.

Advantages

The need for center-taped transformer is eliminated.

The output is twice when compared to center-tapped full wave rectifier.

for the same secondary voltage.

The peak inverse voltage is one-half(1/2) compared to center-tapped full wave rectifier.

Can be used where large amount of power is required.

Disadvantages

It requires four diodes.

The use of two extra diodes cause an additional voltage drop thereby reducing the output

voltage.

Analysis of Full Wave Rectifier (FWR)

The analysis of FWR‘s –center tap construction or bridge construction- is same except for minor

changes.

The full wave rectifier (FWR), will have 48.2% ripple. Comparing this with that of HWR which is

121%, we find that the ripple factor is better for FWR.

Efficiency of Full-wave rectifier

Let V = Vmsinθ be the voltage across the secondary winding

I = Imsinθ be the current flowing in secondary circuit

rf = diode resistance

RL = load resistance

dc power output

Ldc RIPdc 2 -----------------------------(1)

0

.2

12 diII avdc


SJBIT/ECE Dept

0

.Im2

12 dSinI av

mav

II

2 -------------------------------------------------------- (2)

Efficiency of Full-wave rectifier

Let V = Vmsinθ be the voltage across the secondary winding

I = Imsinθ be the current flowing in secondary circuit

rf = diode resistance

RL = load resistance

Efficiency=dc power output/acpower input=Pdc/Pac

dc power output

Ldc RIPdc 2

-----------------------------(1)

0

.2

12 diII avdc

0

.Im2

12 dSinI av

mav

II

2 -------------------------------------------------------- (2)

L

m

dc RI

P

22

------------------------------------------ (3)

input ac power

Lfrmsac RrIP 2---------------------------------------- (4)

diI rms

0

2

2

12

Squaring both sides we get

diI rms

0

22 1

2

2

2 m

rms

II

2

m

rms

II ------------------------------------------------ ----- (5)

0

22 )(Im1

dSinI rms


SJBIT/ECE Dept

Lf

m

ac RrI

P

2

2 --------------------------------------------(6)

Lf

L

m

m

ac

dc

Rr

R

I

I

P

P*

2

22

2

η =

L

f

R

r1

812.0 -------------------------------------------------(7)

The efficiency will be maximum if rf is negligible as compared to RL.

Maximum efficiency = 81.2 %

This is the double the efficiency due to half wave rectifier. Therefore a Full-wave rectifier is twice

as effective as a half-wave rectifier

Comparision of Rectifiers

Particulars Half wave rectifier Centre-tapped Full

wave rectifier

Bridge rectifier

1. No. of diodes

2. Idc

3. Vdc

4.Irms

5.Efficiency

6.PIV

7.Ripple factor

1

Im / Π

Vm / Π

Im / 2

40.6 %

Vm

1.21

2

2Im /Π

2Vm / Π

Im /√ 2

81.2 %

2Vm

0.48

4

2Im /Π

2Vm / Π

Im /√ 2

81.2 %

Vm

0.48

Note:

The relation between turns ratio and voltages of primary and secondary of the transformer

is given by

o N1 / N2 = Vp / Vs

RMS value of voltage and Max. value of voltage is related by the equation.

Vrms = Vm / √2 ( for full-cycle of ac)

If the type of diode is not specified then assume the diode to be of silicon type.


SJBIT/ECE Dept

For an ideal diode, forward resistance rf = 0 and cut-in voltage , Vγ = 0.

The Transformer Utilization Factor (TUF) for full wave rectifier is 81.2%,which is better

compared to HWR,for which it is only28.7%.

Peak Inverse Voltage(PIV): For the center tapped transformer if any one diode is conducting

the voltage across it is the entire secondary voltage of the transformer which is Vm.+

Vm.=2Vm.Therefore the diodes used in the center tap design should have a PIV of 2Vm.

Whereas in the bridge configuration the PIV of each diode is only Vm

Note:

The relation between turns ratio and voltages of primary and secondary of the transformer is

given by

N1 / N2 = Vp / Vs

RMS value of voltage and Max. value of voltage is related by the equation.

Vrms = Vm / √2 ( for full-cycle of ac)

If the type of diode is not specified then assume the diode to be of silicon type.

For an ideal diode, forward resistance rf = 0 and cut-in voltage , Vγ = 0.

Questions

1. Explain the quantitative theory of p-n junction. ----------------------------------------Feb.

2006,7Marks

2. With the help of the diode equation, explain the V-I characteristics of p-n junction—

Aug.8Marks

3. Explain the V-I characteristics with respect to the current equation---------Aug. 2004,

6Marks

4. Draw and explain V-I characteristics of p-n junction diode –Feb.2004,5 Marks

5. write the current equation of a p-n junction and explain the V-I characteristics. What is the

effect of temperature on cut-in voltage and reverse saturation current?-----Aug 2003,8

Marks

6. Differentiate between Zener breakdown and Avalanche breakdown—Aug. 2002, 5 Marks.

7. Draw and explain V-I characteristics of a p-n junction diode.--------- Aug. 2001, 5 Marks

8. Draw the volt- ampere characteristics of a silicon diode marking the cut-in voltage. Briefly

explain the V-I characteristics with respect to the diode current equation.-------------March

2001, 5 Marks.


SJBIT/ECE Dept

9. Draw and explain the V-I characteristics of silicon and germanium diodes.----Aug.

2000,5Marks.

10. Write the diode equation and explain the significance of the terms.—March 2000,5Marks

DIODE APPLICATIONS

1. Define ripple factor show from first principles R.F.of a H.W.R.is1.21--------

Feb.2006,7Marks

2. Draw and explain the working of bridge type F.W.R with necessary waveforms. Derive

the expression for Idc and η.----------------------------------Aug. 2004,10Marks

3. Design the zener regulator for the following specifications----------------------Feb. 2004,5

NMarks

4. Output voltage = 5V

Load current = 20Ma

Zener wattage = 500mW

Input voltage = 125± 3V

5. Draw the bridge rectifier circuit and explain its operation with wave form-Feb

2004,5Marks

6. Explain the working of a full wave bridge rectifier with the help of circuit diagram and

wave forms:Also derive the expression for Vdc. ---------------Aug 2003, 9 Marks

============= 0 =============

Example 1 :In a bridge type FWR, the transformer secondary voltage is 100sinώt.The forward

resistance of each diode is 25Ω and the load resistance is 950Ω.Calculate

i)dc output voltage,ii)ripple factor,iii)efficiency of rectification,iv)PIV of diodes.

-----Jan/Feb-2005

Given, v=100sinώt=Vm sinώt

Hence Vm.=100Volts

.

FILTERS

We know that the output of the rectifier is pulsating d.c. ie the output obtained by the rectifier is

not pure d.c. but it contains some ac components along with the dc o/p. These ac components are

called as Ripples, which are undesirable or unwanted. To minimize the ripples in the rectifier

output filter circuits are used. These circuits are normally connected between the rectifier and load

as shown below.


SJBIT/ECE Dept

Vi

Vo pure dc o/p

Pulsating d.c. output

Filter is a circuit which converts pulsating dc output from a rectifier to a steady dc output. In

otherwords, filters are used to reduce the amplitudes of the unwanted ac components in the

rectifier.

Note: A capacitor passes ac signal readily but blocks dc2.8.1 Types of Filters

Capacitor Filter (C-Filter)

1. Inductor Filter

2. Choke Input Filter (LC-filter)

3. Capacitor Input Filter (Π-filter)

Capacitor Filter( C-filter)

Vin

a f

e

t

b d

c

V1

with filter a

e

t

Fig.1.29 Capacitor filter ( C-filter) (i) Circuit diagram (ii) waveforms

Rectifier

Filter


SJBIT/ECE Dept

When the Input signal rises from o to a the diode is forward biased therefore it starts

conducting since the capacitor acts as a short circuit for ac signal it gets charged up to the

peak of the input signal and the dc component flows through the load RL.

When the input signal fall from a to b the diode gets reverse biased . This is mainly

because of the voltage across the capacitor obtained during the period o to a is more when

comapared to Vi. Therefore there is no conduction of current through the diode.

Now the charged capacitor acts as a battery and it starts discharging through the load RL.

Mean while the input signal passes through b,c,d section. When the signal reaches the

point d the diode is still reverse biased since the capacitor voltage is more than the input

voltage.

When the signal reaches point e, the input voltage can be expected to be more than the

capacitor voltage. When the input signal moves from e to f the capacitor gets charged to

its peak value again. The diode gets reverse biased and the capacitorstarts discharging. The

final output across RL is shown in Fig. 2.

The ripple factor for a Half-wave rectifier with C-filer is given by

r= 1/2√3fCRL

f-----the line frequency ( Hz); C-----capacitance ( F);RL------- Load resistance (Ω);

Ripple factor for full-wave rectifier with C-filter is given by r = 1/ 4 √3 f C RL

Advantages of C-Filter

low cost, small size and good characteristics.

It is preferred for small load currents ( upto 50 mA)

It is commonly used in transistor radio, batteries eliminator etc.

Zener voltage regulator.

The zener diode: The circuit diagram of Zener voltage regulator is shown below

Fig. 1.30 Zener voltage regulator


SJBIT/ECE Dept

The zener diode of breakdown voltage VZ is connected in reverse biased condition across the load

RL such that it operates in breakdown region. Any fluctuations in the current are absorbed by the

series resistance Rs. The Zener will maintain a constant voltage VZ

( equal to Vo) across the load unless the input voltage does not fall below the zener breakdown

voltage VZ.

Case(i): When input voltage Vin varies and RL is constant

If the input voltage increases, the Zener diode which is in the breakdown region is

equivalent to a battery VZ as shown in figure. The output voltage remains constant at VZ (equal to

Vo) and the excess voltage is dropped across the series resistance RS. We know that for a zener

diode under breakdown region large change in current produces very small change in voltage,

thereby the output voltage remains constant.

Case (ii):When Vin is constant and RL varies.

If there is a decrease in the load resistance RL and the input voltage remains constant then there is

an increase in load current.

Since Vin is constant the current cannot come from the source. This addition load current is driven

from the battery VZ and we know that even for a large decrease in current the Zener output

voltage Vz remains same. Hence the output voltage across the load is also constant..

Hence for the zener circuit to work as a regulator,the following condition must be satisfied :

Zener must be reverse biased.

Input voltage must be greater than the zener voltage.(to ensure zener breakdown)

The load current must be less than maximum zener current, Iz(max)---this is due to the

fact that when the load is removed this much current flows through zener,therefore it

should not exceed zener max. current.

The current limiting resistance Rs shall be selected such that Iz should be within the limits of Iz

max and Izmin.That is Izmin<Iz<Izmax

Working:

Case 1: When input voltage increases i.e.Vi≥Vz, then the zener is in the breakdown region and

voltage across it remains constant.The current through it increases.This increases the current

through the resulting more voltage drop across it (i.e.Is*Rs).Thus compensating increase in Vi.

Case 2: if load increases (i.e RL decreases ).This extra current cannot be supplied by the input

(since Vi is constant).This is by decreasing zener current level.The current through Rs is

constant.Therefore the output remains constant.

Designing of Rs: Since the current through the zener varies with the change in input voltage.The

value of Rs to limit this current has to be chosen such that,the zener max. and min. current are

limited.

Iz max. is decided by Pz (power dissipation of zener) of zenerand Rsmin.≤Rs≤Rz max.

Iz min is decided by min. current required for breakdown.


SJBIT/ECE Dept

Recommended questions:

1. Explain the VI- characteristics of a pn-junction diode.

2.Sketch the typical V-I characteristics of PN junction diode and identify the important points.

3.Draw and explain the V-I characteristics of Si and Ge diodes.

4.Derive an expression for the ripple factor and efficiency of half wave rectifier (HWR).


SJBIT/ECE Dept

Unit -2 TRANSISTORS

A transistor is a sandwich of one type of semiconductor (P-type or n-type) between two layers of

other types.

Transistors are classified into two types;

1. pnp transistor

pnp transistor is obtained when a n-type layer of silicon is sandwiched between two p-

type silicon material.

2. npn transisitor

npn transistor is obtained when a p-type layer of silicon is sandwiched between two n-

type silicon materials.

Figure2.1 below shows the schematic representations of a transistor which is equivalent of

two diodes connected back to back.

JE JC JE JC

E C E C

B B

Fig 2.1: Symbolic representation

pnp npn

Fig 2.2: Schematic representation

The three portions of transistors are named as emitter, base and collector. The junction

between emitter and base is called emitter-base junction while the junction between the

collector and base is called collector-base junction.

The base is thin and tightly doped, the emitter is heavily doped and it is wider when compared

to base, the width of the collector is more when compared to both base and emitter.

n n

p

p p

n


SJBIT/ECE Dept

In order to distinguish the emitter and collector an arrow is included in the emitter. The

direction of the arrow depends on the conventional flow of current when emitter base junction

is forward biased.

In a pnp transistor when the emitter junction is forward biased the flow of current is from

emitter to base hence, the arrow in the emitter of pnp points towards the base.

Operating regions of a transistor

A transistor can be operated in three different regions as

a) active region

b) saturation region

c) cut-off region

Active region

E JE B JC C

VEB VCB

Fig 2.3: pnp transistor operated in active region

The transistor is said to be operated in active region when the emitter-base junction

is forward biased and collector –base junction is reverse biased. The collector current is said to

have two current components one is due to the forward biasing of EB junction and the other is due

to reverse biasing of CB junction. The collector current component due to the reverse biasing of

the collector junction is called reverse saturation current (ICO or ICBO) and it is very small in

magnitude.

Saturation region

E JE B JC C

VEB VCB

Fig 2.4: pnp transistor operated in Saturation region

p p

n

p p

n


SJBIT/ECE Dept

Transistor is said to be operated in saturation region when both EB junction and CB junction are

forward biased as shown. When transistor is operated in saturation region IC increases rapidly for

a very small change in VC.

Cut-off region

E JE B JC C

VEB VCB

Fig 2.5: pnp transistor operated in Cut-off region

When both EB junction and CB junction are reverse biased, the transistor is said to be operated in

cut-off region. In this region, the current in the transistor is very small and thus when a transistor

in this region it is assumed to be in off state.

Working of a transistor (pnp)

E JE B JC C

IE IC

IB

VEB VCB

Fig 2.6 Transistor in active region

Consider a pnp transistor operated in active region as shown in Figure 2.6

Since the EB junction is forward biased large number of holes present in the emitter as

majority carriers are repelled by the +ve potential of the supply voltage VEB and they

move towards the base region causing emitter current IE.

Since the base is thin and lightly doped very few of the holes coming from the emitter

recombine with the electrons causing base current IB and all the remaining holes move

towards the collector. Since the CB junction is reverse biased all the holes are

immediately attracted by the –ve potential of the supply VCB. Thereby giving rise to

collector current IC.

p p

n

IE IC

p p ICO

n


SJBIT/ECE Dept

Thus we see that IE = IB + IC -----------------(1) (By KVL)

Since the CB junction is reverse biased a small minority carrier current ICO flows from

base to collector.

Current components of a transistor

JE JC

IE

IC

IB

VEB VCB

Fig 2.7: Current components of a transistor

Fig 2.7 above shows a transistor operated in active region. It can be noted from the diagram the

battery VEB forward biases the EB junction while the battery VCB reverse biases the CB junction.

As the EB junction is forward biased the holes from emitter region flow towards the base causing

a hole current IPE. At the same time, the electrons from base region flow towards the emitter

causing an electron current INE. Sum of these two currents constitute an emitter current IE = IPE

+INE.

The ratio of hole current IPE to electron current INE is directly proportional to the ratio of the

conductivity of the p-type material to that of n-type material. Since, emitter is highly doped when

compared to base; the emitter current consists almost entirely of holes.

Not all the holes, crossing EB junction reach the CB junction because some of the them combine

with the electrons in the n-type base. If IPC is the hole current at (Jc) CB junction. There will be a

recombination current IPE - IPC leaving the base as shown in figure 3.7.

If emitter is open circuited, no charge carriers are injected from emitter into the base and hence

emitter current IE =o. Under this condition CB junction acts a a reverse biased diode and therefore

the collector current ( IC = ICO) will be equal to te reverse saturation current. Therefore when EB

junction is forward biased and collector base junction is reverse biased the total collector current

IC = IPC +ICO.

IPE IPC

(hole current) (hole current)

INE (e- current) ICO

IPB


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Transistor configuration

We know that, transistor can be used as an amplifier. For an amplifier, two terminals are required

to supply the weak signal and two terminals to collect the amplified signal. Thus four terminals

are required but a transistor is said to have only three terminals Therefore, one terminal is used

common for both input and output.

This gives rise to three different combinations.

1. Common base configuration (CB)

2. Common emitter configuration (CE)

3. Common collector configuration (CC)

1. CB configuration

A simple circuit arrangement of CB configuration for pnp transistor is shown below.

IE IC

Vi IB RL Vout

VEB VCB

Fig 2.8:CB configuration

In this configuration, base is used as common to both input and output. It can be noted that the i/p

section has an a.c. source Vi along with the d.c. source VEB. The purpose of including VEB is to

keep EB junction always forward biased (because if there is no VEB then the EB junction is

forward biased only during the +ve half-cycle of the i/p and reverse biased during the –ve half

cycle). In CB configuration, IE –i/p current, IC –o/p current.

Current relations

1.current amplification factor (α)

It is defined as the ratio of d.c. collector current to d.c. emitter current

α = E

O

I

I

2. Total o/p current

We know that CB junction is reverse biased and because of minority charge carriers a small

reverse saturation current ICO flows from base to collector.


SJBIT/ECE Dept

IC = IE + ICO

Since a portion of emitter current IE flows through the base ,let remaining emitter current be αIE .

IC = αIE + ICo

Characteristics

1. Input characteristics

IE

VCB=10V VCB=5V

VEB

Fig 2.9: Input characteristics

I/p characteristics is a curve between IE and emitter base voltage VEB keeping VCB constant. IE is

taken along y-axis and VEB is taken along x-axis. From the graph following points can be noted.

1. For small changes of VEB there will be a large change in IE. Therefore input resistance is

very small.

2. IE is almost independent of VCB

3. I/P resistance , Ri = ΔVEB / Δ IE VCB =constant

2. Output characteristics

IC

Active region

IE=3 mA

IE =2 mA

Saturation IE = 1 mA

region IE = 0

Cut-off region VCB

Fig 2.10:Output characteristics

o/p characteristics is the curve between IC and VCB at constant IE. The collector current IC is taken

along y-axis and VCB is taken along x-axis. It is clear from the graph that the o/p current IC

remains almost constant even when the voltage VCB is increased.

i.e. , a very large change in VCB produces a small change in IC. Therefore, output resistance is very

high.


SJBIT/ECE Dept

O/p resistance Ro = ΔVEB / Δ IC IE = constant

Region below the curve IE =0 is known as cut-off region where IC is nearly zero. The region to

the left of VCB =0 is known as saturation region and to the right of VCB =0 is known as active

region.

2. CE configuration

IC

RL Vout

IB

Vi IE

VEB VCE

Fig 2.11:CE configuration

In this configuration the input is connected between the base and emitter while the output is taken

between collector and emitter. For this configuration IB is input current and IC is the output current.

1. Current amplification factor (β)

It is the ratio of d.c. collector current to d.c. base current.

i.e., β = IC / IB

2. Relationship between α and β

We know that α = E

C

I

I

α = CB

C

II

I

divide both numerator and denominator of RHS by IC, we get

1

1

C

B

I

I


SJBIT/ECE Dept

( IC / IB = β )

1

Also we have

1

)1(

)1(

Derivation of Total output current IC

We have CBOEC III

1

)1(

1

CBOEC

CBOEC

III

IIB

I

Ic = CBOB II )1(

Transistor Characteristics

1. i/p characteristics

IB

VCE=10V VCE=5V

VEB

Fig 2.11: i/p characteristics

Input characteristics is a curve between EB voltage (VEB ) and base current (IB ) at constant VCE.

From the graph following can be noted.

1. The input characteristic resembles the forward characteristics of a p-n junction diode.

2. For small changes of VEB there will be a large change in base current IB. i.e., input

resistance is very small.

11

1


SJBIT/ECE Dept

3. The base current is almost independent of VCE.

4. Input resistance , Ri = ΔVEB / Δ IB V CE = constant


IC

(mA)

Active region

30 μA

20 μA

10 μA

IB =0μA

Cut-off region

V CE(volts)

Fig 2.12: Output characteristics

It is the curve between VCE and IC at constant IB. From the graph we can see that,

1. Very large changes of VCE produces a small change in IC i.e output resistance is very high.

2. output resistance Ro = ΔVCE / ΔIC IB = constant

Region between the curve IB =0 is called cut-off region where IB is nearly zero. Similarly the

active region and saturation region is shown on the graph.

3. CC configuration

IE

RL Vout

IB

Vi IC

VCB VCE

Fig 2.13: CC configuration

In this configuration the input is connected between the base and collector while the output is

taken between emitter and collector.

Here IB is the input current and IE is the output current.

Current relations

1. Current amplification factor (γ)


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2. Relationship between α β and γ

γ = B

E

I

I

γ = B

CB

I

II

divide both Numerator and denominator by IB

1

1B

C

II

1 ( β = IC / IB)

11

1

1

Derivation of total output current IE

We know that IC = CBOE II

IE = IB + IC

IE = IB + αIE + ICBO

IE(1-α ) = IB + ICBO

IE = 11

CBOB II

IE = γIB + γICBO

IE = γ (IB + ICBO)


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Comparison between CB, CC and CE configuration

Characteristics CB CE CC

1. Input reistance (Ri)

2. Output resistance (Ro)

3. Current amplification

factor

4. Total output current

5. Phase relationship

between input and output

6. Applications

7. Current gain

8. Voltage gain

low

high

1

CBOEC III

In-phase

For high frequency

applications

Less than unity

Very high

low

high

1

Ic = CBOB II )1(

Out-of phase

For audio frequency

applications

Greater than unity

Grater than unity

high

low

1

1

IE = γIB + γICBO

in-phase

For impedance

matching

Very high

Less than unity

Transistor as an amplifier

IC

RL Vout

IB

Vi ` IE

VEB VCB

Fig 2.14: Transistor as an amplifier


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Consider a npn transistor in CE configuration as shown above along with its input characteristics.

A transistor raises the strength of a weak input signal and thus acts as an amplifier. The weak

signal to be amplified is applied between emitter and base and the output is taken across the load

resistor RC connected in the collector circuit.

In order to use a transistor as an amplifier it should be operated in active region i.e. emitter

junction should be always FB and collector junction should be RB. Therefore in addition to the

a.c. input source Vi two d.c. voltages VEB and VCE are applied as shown. This d.c. voltage is called

bias voltage.

As the input circuit has low resistance, a small change in te signal voltage Vi causes a large

change in the base current thereby causing the same change in collector current (because IC = βIB).

The collector current flowing through a high load resistance RC produces a large voltage across it.

Thus a weak signal applied at the input circuit appears in the amplified form at the output. In this

way transistor acts as an amplifier.

Example: Let RC = 5KΩ, Vin =1V, IC =1mA then output V=ICRC =5V

mass system illustrates some important and universal principles of osc2. CE configuration

IC

RL Vout

IB

Vi IE

VEB VCE

Fig 2.15:CE configuration

In this configuration the input is connected between the base and emitter while the output is taken

between collector and emitter. For this configuration IB is input current and IC is the output current.

1. Current amplification factor (β)

It is the ratio of d.c. collector current to d.c. base current.

i.e., β = IC / IB

2. Relationship between α and β

We know that α = E

C

I

I


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α = CB

C

II

I


1

1

C

B

I

I

( IC / IB = β )

1

Also we have

1

)1(

)1(

Derivation of Total output current IC

We have CBOEC III

1

)1(

1

CBOEC

CBOEC

III

IIB

I

Ic = CBOB II )1(

11

1


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Transistor Characteristics

1. i/p characteristics

IB

VCE=10V VCE=5V

VEB

Fig 2.16: i/p characteristics

Input characteristics is a curve between EB voltage (VEB ) and base current (IB ) at constant VCE.

From the graph following can be noted.

The input characteristic resembles the forward characteristics of a p-n junction

diode.

For small changes of VEB there will be a large change in base current IB. i.e., input

resistance is very small.

The base current is almost independent of VCE.

Input resistance , Ri = ΔVEB / Δ IB V CE = constant


IC

(mA)

Active region

30 μA

20 μA

10 μA

IB =0μA

Cut-off region

V CE(volts)

Fig 2.17: Output characteristics

It is the curve between VCE and IC at constant IB. From the graph we can see that,

Very large changes of VCE produces a small change in IC i.e output resistance is very high.

output resistance Ro = ΔVCE / ΔIC IB = constant

Region between the curve IB =0 is called cut-off region where IB is nearly zero. Similarly the

active region and saturation region is shown on the graph.

3. A) Define alpha and beta of a transistor and derive the relationship between them


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B) Sketch the input characteristics of transistor in CC configuration.

Ans:A)

Relationship between α and β

We know that α = E

C

I

I

α = CB

C

II

I


1

1

C

B

I

I

( IC / IB = β )

1

Also we have

1

)1(

)1(

B)the input characteristics of common collector stage is driven by the equation

VCE = VBE + VCB.

In order to draw the input characteristics the output voltage in this case vce is held constant and

vbe is also constant the forward diode drop the input voltage is nothing but vce-vbe, if this

condition is violated zero current flows through the transistor.

11

1


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UNIT-3

BIASING METHODS

Biasing:

Transistor biasing is the establishment of suitable dc values such as Ic, VCE, IB etc. by

using a single dc source... When BJT is properly biased, faithful amplification of signals take

place. For example applying forward bias to EB- junction and reverse bias to the CB-junction

makes the transistor to operate in the active region. Hence Biasing is applying dc voltages to the

junctions of the transistor to make it operate in the desired region. Biasing eliminates the need

for separate dc sources in the emitter and collector circuits.

Types of biasing.

There are mainly three types of biasing circuits used for biasing a transistor, they are:

a) Base bias or fixed bias

b) Collector to base bias

c) Voltage divider bias

The three biasing circuits are shown in figure 3.1

Fig3.1 : The three basic biasing circuits.

a) Base bias or fixed bias:

For this configuration the biasing arrangement is as shown in figure3.2 below. A base resistance

RB is used between Vcc and base to establish the base current IB Thus the base current is the

constant quantity determined by Vcc and IB. Because Vcc and RB are fixed quantities, IB remains

fixed and hence it is also called fixed bias.


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Fig 3.2: Base bias circuit.

Applyingh Kirchoff‘s voltage law to the base circuirt. (The base circuit consists of Vcc, RB,EB-

junction of the transistor and ground)

IB RB +VBE=Vcc

IB =(Vcc- VBE)/ RB

VBE is 0.7V for Silicon and 0.3V for Germanium transistor.

The collector current is calculated as

Ic= β IB.

Applying the KVL to collector circuit (The collector circuit consists of Vcc, Rc, VCE, and ground

Vcc= VCE +IcRc

VCE =Vcc –IcRc

Example: The base bias circuit is shown in fig 3.3.For the values indicated calculate IB, Ic and

VCE.

Example1:

Fig-3.3


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Effect of hFE(max) and hPE(mifl)

When the transistor de current gain is known. it is quite easy to determine the circuit bias

conditions exactly as in However.in practise the precise current gain of each transistor is

normallynot known. The transistor is usually identified by its type number. and then the

maximum and minimum values of current gain can be obtained from the manufacturer's data sheet.

In circuit analysis it is sometimes convenient to use a typical Hfe value. However. as

demonstrated in Example 5-4. hFElmaxl and hpElf11il11must be used to calculate the range of

possible levels of Ic

and VCE'

Example2:

Figure 3:

Note that the typichFE value of 100 used in Ex. 5-3 gives Ic =3.68 mA and VCE = 9.9 V. But.

applying the hFElf11inl and hFElmaxl values in Example 4-4 results in an Ic range of 1.84 mA to

7.36 mAl and VCE ranging from 1.8 V to 13.95 V. The different Ic and VCE levels determined in


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Examples 3.1 and3. 2 are illustrated by the three Q points in Fig. 3.4 Transistors of a given type

number always have a wide range of hFE values (the hFE spread). So

hFE(maxand hFE(minshould always be used for practical circuit analysis.

The base bias Circuit is rarely employed because of the uncertainty of the Q point. More

predictable results can be obtained with other types of bias circuit.

Fig 3.4: The transistor hFE value has a major effect on the Q p0int for a base bias circuit.

Base bias using pnp transistor:

All of the base bias circuit discussed for npn is also applicable for pnp transistor except for

polarities of voltage and currents. The figure shows the pnp transistor biasing circuit. Note that

the voltage polarities and current directions are reversed compared to npn transistor base bias

circuit. The KVL equations can be applied for analyzing the pnp transistors base bias circuit in

exactly the same way as for npn circuits discussed above.

Fig 3.5: Base bias circuits using pnp transistors.


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b)Collector to base bias circuit:

Circuit operation and analysis:

The collector-to-base bias circuit shown in Fig.5-17(a) has the base resistor RB connected

between the transistor collector and base terminals. As will be demonstrated. this circuit has

significantly improvedbias stability for hpE changes compared to base bias. Refer to Fig. 5-17(b)

and note that the voltage across RB is dependent on VeE•

Fig 3.6: Collector-to-base bias circuits. Any change in VCE changes IB The IB change

causes IC to change, and this tends to return IC toward its original level.

Note that the voltage across RB. is dependent on VCE and VCE is independent of the level of Ic

and IB.

If Ic increases above the design level there is an increased voltage drop across Rc, resulting in a

reduction in VCE..The reduced Vce level causes IB to be lower than its design level and because

Ic= β Ib, the collector current is also reduced. Thus, an increase in Ic produces a feedback effect

that tends to return Ic toward its original level. Similarly, reduction in Ic produces an increase in

Vce which increase IB, thus tending to increase Ic back to the original level.

Analysis of this circuit is a little more complicated than base bias analysis. To simplify the

process an equation is first derived for the base current IB.. Equating equations 1 and 2,

Hence, VCE = Vcc-Rc (IB +Ic) = VBE + IB RB

IB (Rc + RB ) + Ic Rc = Vcc- VBE

Substituting Ic = β IB into the above equation

IB (Rc + RB ) + β IBRc = Vcc- VBE

This gives

Vcc- VBE

IB = ------------- ------------------- 3

(β + 1) Rc + RB


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Effect of β (max) and β (min) in collector to base bias circuit

In the collector to base bias circuit, the feed back from the collector from the collector to base

reduces the effects of β spread values, due to transistor replacement etc. Thus collector to base

bias has greater stability than base bias for a given range of β values. This is illustrated in the

following example.

It is important to note that, unlike the situation in a base bias circuit, the base current in a

collector to base bias circuit does not remain constant, rather IB compensates for IC increase due

to negative feed back provided by the base bias resistor RB, even when the transistor β value is

changed as illustrated in the following example.

Comparing the base bias and the collector to base bias circuits for Q point stabilization

against β variations, it is seen that the Q points for the collector to bias circuit is clearly has

greater stability against β spread value than base bias circuit.

Collector to base bias circuit using pnp transistor.

Collector to base bias circuit using pnp transistor. is illustrated in fig. below. Note that the voltage

polarities and current directions are reversed compared to npn transistor collector to base bias

circuit. This circuit can be analyzed in exactly the same way as the npn transistor circuit.

Voltage divider bias circuit

Circuit operation

Voltage divider bias also known as emitter current bias, is the most stable of the three basic

transistor biasing circuits. A voltage divider bias circuit is shown in fig. below, and the current

and voltage conditions through out the discussions are illustrated in fig.8. It is seen that there is an

emitter resistor RE connected in series with emitter, so that the total dc load in series with the

transistor is (Rc+ RE) and this resistance must be used when drawing the dc load line for the

circuit. Resistor R1 and R2 constitute a voltage divider that divides the supply voltage to produce

the base bias voltage IB.

Voltage divider bias circuits are normally designed to have the voltage divider current (I2) very

much larger than the transistor base current (IB).In this circumstance, VBE is largely affected by IB

so VBE can be assumed to remain constant.


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Fig.-3.7 : Voltage divider bias circuit.

Referring to above figure 8, with VB constant, the voltage across the emitter resistor is also a

constant quantity; this means that the emitter current is constant,

The collector current is approximately equal to the emitter current, so Ic is held at constant level.

Again referring to the figure, the transistor collector to emitter voltage is,

VCE = Vcc- (IC + IB) RC

Clearly, with Ic and IE constant, the transistor collector- emitter voltage remains at a constant level.

It should be noted that the transistor β value is not involved in any of the above equations.

The effect of max. and min. β in voltage divider bias circuit

The following example will demonstrate the variation of β with transistor replacements. The

variations of β on the operating point Q is much less than the C-B bias. Hence this biasing

technique is more reliable and stable. This makes it the most popular and preferred biasing

technique used in circuits.

Comparison of varies biasing techniques.

a) Base bias circuit: The stability of this circuit is less. No feed back is used. Used only

where stability is not important like switching circuits.

b) Collector to base bias: Moderately used, has moderate stability.Negetive feedback is used.

It is used in switching applications where moderate stability is essential.


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c) Widely used, has highest stability. Negative feedback is used .Due to excellent stability it

is always the preferred circuit.

Stability factor-S

The stability factor S is defined as the rate of change of collector current with respect to the

reverse saturation current, keeping β and VBE constant.

This definition facilitates the comparison of the stability provided by different biasing

circuits. The minimum value of S=1, this means if Icbo increases say 1μA, then Ic also

increases by 1μA.The value of S more likely the circuit will exhibit thermal instability,

therefore the higher value of S is not favorable value of S<10 is considered good.

The general equation of Ic=βIB+(1+β) βICBO

The general equation of Ic if we differentiate with respect to Ic with β as constant.

The stability factors for the three basic biasing circuits is shown below


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UNIT 4:OTHER DEVICES

4.1 Silicon Controlled Rectifier (SCR)

a) Introduction: The SCR is a rectifier constructed of silicon material with a third terminal for

control purposes. Silicon is chosen because of its high temperature and power capabilities. The

current to the control element, called the gate, determines the anode to cathode voltage at which

the device commences to conduct. The gate bias may thus either keep the device off or it may

allow conduction to start.

b) Principle of Operation: As shown in Fig. 4.1(a) the SCR is a 4-1ayer device, consisting of P-

type and N-type semiconductor materials, situated alternately. The layers are called PI' N 1 ' P2

and N2' There are three junctions : J 1 ' J2 and J3 and three terminals - anode (A), cathode (K) and

gate (G).

A detailed examination of the basic operation of the SCR is effected by imagining the splitting up

of layers N1 and P2 into N1_1, N1•Z' PZ-1 and P2-2, as shown in Fig.4.1(b).


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The situation is unchanged as N1_1 is connected to NI_2 ' and P 2-1 is connectedtoP2_2' So, now we

can consider PI ' N1_1 and P2-1 as a P-N-P transistor and NI_2, P2-2 and N2 as an N-P-N transistor.

The transistor block diagram of Fig. 4.1 (b) can now be replaced by the equivalent circuit of

Fig.4.2. It is apparent that T2 collector is connected to T1 base, and the T1 collector to the T2 base.

The T1 emitter is the SCR anode terminal, and T2 emitter is the cathode and the gate is the

junction of the T1 collector and T2 base.

If a positive voltage is applied to the anode (A) and a negative voltage to the cathode (K), the

SCR is forward biased. When there is no connection given to the gate, small leakage currents flow,

and both the transistors remain cut-off. Such leakage currents are due to the junction 12 being

reverse biased. When A is positive and K is negative (as shown in Fig. 4.4).


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If a negative gate-cathode voltage is applied, .the- T2 base emitter junction is reverse-biased, and

there is a flow of only small leakage currents, keeping both the transistors off.

Next, if a positive gate-cathode voltage is applied, as in Fig. 4.5, it forward biases the T2 base

emitter junction and results in the flow of base current /82'consequently producing collector

current Ic2. As Ic2 and 1B1 are one and the same, T1 also switches on and Ic1 flows, providing base

current 1B2' Each collector current provides much more base current than is needed by the

transistors, and even when the gate current 1G is cut-off, the transistors remain on, conducting

heavily with just a small SCR anode to cathode drop. The phenomenon of the SCR remaining on

even after the removal of its triggering current is called latching.

A short pulse of gate current is sufficient to switch on the SCR. Once switched on, the gate has no

further control and the device remains on until the anode-cathode voltage is reduced to near zero.

If the anode to cathode voltage is made sufficiently large, the SCR can be triggered on even

though the gate is open-circuited. Also, referring back to the earlier Fig. 4.1 (a), where a positive

voltage is applied to anode A and a negative voltage to cathode K, junctions 11 and J3 are forward

biased while Jz is reverse biased. When VF is made large enough, Jz will break down due to

avalanche effect. Collector currents flowing each of the transistors T1 and T2, Each collector

current again feeds the base current and both the transistors are switched on.


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4.2 SCR Characteristics and Parameters (Fig. 4.6)

We shall first deal with the reverse characteristics.

If a negative voltage is applied to anode A and a positive voltage is applied to cathode K, to the

SCR of Fig. 4.1 (a), the junction J2 is forward biased, while the junction J) and J3 are reverse

biased. When the reverse voltage -VAK is small, a small leakage current (of about 80 to 100

microamperes) flows, which is called the reverse blocking current. If the reverse voltage is now

increased, IRX (Reverse Blocking Current) practically remains constant until -VAK becomes large

enough to cause JI and J3 to break down in the Zener or Avalanche mode. As is indicated in Fig.

4.6 the reverse current increases very rapidly when the reverse breakdown voltage is reached and

if I is not limited, the SCR could be damaged or destroyed. The region of the reverse

characteristics before reverse breakdown is called Reverse Blocking Region.

4.2.1 Pulse Control of an SCR

The pulse control circuit of an SCR is given in Fig. 4.7(a). If the SCR had been an ordinary

rectifier, it would have produced a half-wave rectified voltage across the load Rc However, in this

case, the SCR will no conduct even during the positive half-cycle of the input a.c. voltage unless

G is given positive voltage to forward bias its centre most junction. By applying a trigger pulse at

any time during the positive input half-cycle, the device can be fired into conduction.


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The SCR continues to conduct for the remaining part of the half cycle and switches OFF the

moment the supply voltage reaches zero. The waveform across the load is a part of the positive

half-cycle, which is shaded in Fig. 4.7(b).

The load waveforms that result from the SCR being switched on at different points in the positive

half-cycle, depending on the trigger pulse, are depicted in Fig. 4.7(b).

It is seen that the conduction angles are <Xl and <Xz· It is apparent from the two waveforms that

the average load voltage across RL is greater in the case of the first waveform than in the case of

the second waveform. Hence it follows that the average load current will be greater in the case of

the first waveform. Thus, the load current is controlled by the SCR conduction angle. It must be

kept in mind that the SCR cannot be fired into conduction at 0° point in the waveform, because

the anode-cathode voltage must be at least equal to the conduction voltage VFC (shown as VF4 in

Fig. 4.6). Also, the SCR will switch OFF before the load waveform reaches 90° when the load

current falls below the holding current.

The instantaneous value of the load voltage is the instantaneous supply voltage (Vi) less the SCR

forward voltage (VFC)'

We can determine the load current from VL and RL. The instantaneous supply voltage (vi(o)) that

forces the SCR OFF can be calculated from VFC' R L and the holding current IH ;

While selecting an SCR for any specific application, the following points must be borne in mind :

I. The forward and reverse blocking voltages should exceed the peak supply voltage.

2. The specified maximum r.m.s current must be greater than the r.m.s load current.


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3. The gate current used should be at least three times the specified Ie for the SCR.

4.2.2 90° Phase Control

Fig. 4.8(a) shows a circuit which can trigger (or switch on) the SCR anywhere

from the commencement of the a.c cycle to the peak of its positive half-cycle,

i.e., between 0° and 90°.

A voltage divider comprIsIng the resistors R) , R2 and R3 is included, in the circuit. The

triggering voltage is obtained from the a.c. supply through this voltage divider. When the moving

contact is positioned at the top of R2, the SCR will be triggered ON almost at the commencement

of the positive half-cycle of the a.c. input. On the other hand, if the moving contact is set at the

bottom of R2, the SCR may not switch ON until the peak of the positive half-cycle. In between

these two extremes, the SCR can be triggered ON somewhere between the zero level and the peak

of the positive half-cycle, i.e., between 00 and 90°. If the triggering voltage Vr is not large enough

even at the peak of the positive half-cycle (i.e., at 90°), then the SCR will not trigger ON at all

because Vr is at its maximum value at the peak of the a.c voltage source and falls OFF past the

peak. The purpose of the diode D is to protect the SCR gate from negative voltage during the

negative input half-cycle. The circuit is so designed that the voltage divider current I) is much

greater than the SCR gate current IG' The instantaneous triggering voltage at switch ON is

The above method is also known as the amplitude firing of an SCR.

4.2.3 180 Phase Control

The circuit of Fig. 4.9 can trigger the SCR from 0° to 180° of the a.c input waveform. A second

diode Dz is incorporated in the circuit. We shall start our analysis with the negative half cycle.

During the negative half-cycle of the input, C is charged immediately (with the polarity as shown)


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to the peak of the input voltage because D2 is forward-biased. When the peak of the negative half-

cycle passes over, D2 becomes reverse biased because its anode (connected to C) becomes more

negative than its cathode (connected to the supply). Hence, C starts to discharge through R.

Depending on the time constant (= CR), C may almost be completely discharged at the

commencement of the oncoming positive half-cycle or may retain partial charge until almost 1800

of the positive half-cycle has passed. So long as C remains negatively charged, D1 is reverse-

biased and the gate cannot become positive to trigger the SCR into conduction. Hence R can be

adjusted to trigger the SCR into conduction anywhere between 00 and 1800 of the input a.c cycle.

4.3 More SCR Applications

4.3.1 SCR Circuit Stability

The stability of an SCR circuit depends upon its correct operation; the device should switch ON

and OFF at the desired instants. However, false triggering can be produced by noise voltages at

the gate, transient voltages at the anode or by rapidly changing voltages at the anode (known as

dv/dt triggering). Gate noise voltages could be large enough to forward bias the gate-cathode

junction, resulting in false triggering. Anode voltage transients, which could 'be due to other

devices connected to the same a.c source and/or due to high speed switching, could exceed the

SCR breakover voltage, and thus trigger the device into conduction. The dv/dt effect takes place

when the anode voltage changes instantaneously, such as when the supply is switched ON at its

peak voltage level.

The SCR capacitance charges rapidly, and the charging current is enough to trigger the device.

Noise voltages at the gate can be restricted by using short gate connecting leads, and by

connecting a gate bias resistor RG (see Fig. 4.10 (a)). This should be kept as near as possible to

the SCR gate-cathode >terminals, because noise could be picked up by the conductors connected

between RG and the device; such noise could cause false triggering.


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Noise could be effectively countered by biasing the gate negative with respect to the cathode.

Capacitor C in Fig. 4.10 (b) could be used to short circuit gate noise voltages. C also operates

along with the anode-gate capacitance as a voltage divider that limits the possibility of dv/dt

triggering.

4.3.2 Zero Point Triggering

Th eNeed: If the SCR is fired into conduction while the instantaneous level of the supply voltage

is more than zero, surge currents are generated which cause· electromagnetic interference (EMf).

This EM! can adversely affect the operation of other nearby circuits and equipment, and the

switching transients can interfere with the proper control of the SCR. Hence the necessity is felt of

designing circuits

Which ensure that the SCR is triggered ON at the instant the a.c supply is crossing The zero

voltage point from the negative half-cycle to the positive half-cycle. This is known as zero-point

triggering and it effectively eliminates the EMf and the switching transients.

Fig. 4.12 shows the Zero point triggering circuit.

Two SCRs are connected in an inverse-parallel configuration. SCRI has an RC triggering circuit

comprising C1 and RI ' while SCR2 has another RC triggering circuit made up of C2 and R2.


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When switch 5 I is closed, there is no current to its gate; hence it is OFF. SCR2 too remains OFF

as SCR is uncharged.

4.3.3 Crowbar Circuit

If anything happens inside a power supply to cause its output voltage to go excessively high, the

results can be devastating, because some loads such as expensive digital ICs cannot withstand too

much supply voltage without being destroyed. One of the most important applications of the SCR

is to protect delicate and expensive loads against over voltages from a power supply. Fig. 4.13

shows a power supply of Vcc applied to a protected load. Under normal conditions, Vcc is less

than the breakdown voltage of the Zener diode.

Hence the diode does not conduct and there is no current through the gate bias register R; in this

case there is no voltage across R. The gate voltage Va remains equal to zero and SCR remains

open. The load receives a voltage of Vcc and all is well.

Now, if the supply voltage increases for any reason and exceeds Vz' the zener diode breaks down,

current flows through R and a voltage appears across R. If this voltage is greater than the gate

trigger voltage of the SCR, the SCR fires and becomes a closed latch; the power supply is shorted

by the SCR. This action is similar to throwing a crowbar across the load terminals. Because the

SCR turnon is very fast (I Ils for a 2N444I), the load is quickly protected against the damaging

effects of a large overvoltage. The overvoltage that fires the SCR is

Crowbarring, though a drastic form of protection, is necessary with many digital ICs because they

can't take much overvoltage. Rather than destroy expensive ICs, therefore, we can use an SCR

crowbar to short the load terminals at the first sign of overvoltage. With an SCR crowbar, a fuse

or current limiter is needed to prevent damage to the power supply.


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4.3.4 Heater Control Circuit

The SCR heater control circuit is shown in Fig. 4.14.

The circuit of Fig.4.14 uses a temperature sensitive control element (Rz). When the temperature

rises, the resistance of Rz decreases; when the temperature falls, the resistance of Rz increases.

Diode D keeps the capacitor C charged to the supply voltage peak. C, along with resistor R I '

functions as a constant current source for R2.

When the temperature rises to the predetermined level, the resistance of R2 decreases, dropping

VG to a level which keeps the SCR from triggering; consequently the power is turned OFF to the'

heater load. When the temperature drops to a specified level, the resistance of Rz increases,

causing VG to increase to the SCR triggering level, as a result of which the power is turned ON to

the heater load. The rectifier D2 could be inserted in the circuit, as shown, to pass the negative

half cycle of the supply waveform to the heater

load.

4.4 Unijunction Transistor (UJT)

Introduction

Though the Unijunction Transistor is a 3-terminal device, it is quite different from the bipolar and

field effect transistors as far as operation is concerned. The device input, called the Emitter, has a

resistance which rapidly decreases when the input voltage reaches a certain level. This is called a

negative ."esistance characteristic, and it is this characteristic which makes the UJT useful in a

numberof applications.


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UJT Operation

The basic construction, the symbol and the equivalent circuit of a WT are

given in Figs. 4.15 (a), (b) and (c).

and Base 2 (B2), and the P-type region is called Emitter E. The Silicon bar is lightly doped and so

has a high resistance, depicted by two resistors RBI from B 1 to C (shown variable as its value

depends upon the bias voltage), and RB2 from 82 to C, as shown in Fig. 4.5(c). Let us term RBI +

RIiJ2 = RBB. The P-type emitter forms a P-N junction with the N-type silicon bar, and this is

represented by a diode in the equivalent circuit. When a voltage VBB is applied as shown, the

voltage at C, the junction of RBI

and RB2 is

VRB1 is also the voltage at the cathode of the diode representing the p-n


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junction.When the emitter terminal is open-circuited, the only current flowing is

If the emitter terminal is grounded, the P-N junction is reverse biased and a small reverse current

(JEO) flows. Now, the emitter input voltage (VE) is slowly increased from zero. As VE becomes

equal to VRB1, IEO will be reduced to zero. With equal voltage levels on each side of the diode,

neither reverse current nor forward current will flow. If VE is further increased, the P-N junction

becomes forward biased, and a forward emitter current IE begins to flow from the emitter

terminal into the N-type silicon bar. When this occurs, charge carriers are injected into the RBl

region of the bar. As the resistance of a semiconductor material is dependent upon doping, the

additional charge carriers cause the resistance of the RBl region to rapidly decrease. As the

resistance decreases, the voltage drop across RBI also decreases, causing the P-N junction to be

more heavily forward biased. This results in a greater forward current, and consequently more

charge carriers are injected, causing still further reduction in the resistance of the RBI region. The

input voltage is also pulled down and the input current lEis increased to a limit determined by the

source resistance. The device remains in this condition until the input is open circuited or lEis

reduced to a very low level.

UJT Characteristics

In Fig. 4.16 the emitter voltage VE is plotted against the emitter current Ie If 82 is open-circuited,

so that IB2 = 0, then the input volt-ampere relationship is that of the usual forward biased P-N

junction. When VBB is about 20 Volts and VE = 0, the emitter junction is reverse biased and the

emitter reverse current, lEO' flows as shown at point 1 of the characteristics (Fig. 4.16).

Increasing VE reduces the emitter junction reverse bias. When VE = VRB1 , (refer Fig.4.15(c)),

there is no reverse or forward bias and IE = 0. This happens to take place at the value of VE= 12

volts as given by point 2. Increasing beyond this point begins to forward bias the emitter junction,

reaching a peak point V . At this peak point, the junction p is a little forward biased and a very

small forward emitter current flows, which is called the Peak Current I . Upto this point, the UJT

is said to be operating in the p cut-off region. After that, increase of VE results in a sudden

increase in emitter current IE and VE falls to the Valley Voltage VV' At this point, IE equals the

Valley Current Iv' The region of the characteristics between Peak Point and Valley Point is the

Negative Resistance Region of the characteristics. A further increase incurrent causes the device

to enter the saturation region.


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When Vss is reduced below 20 Volts, VE is also reduced and the UJT will switch on at a lower

value of voltage. Thus, using the different values of VSS'a family of V E -IE characteristics for a

given UJT can be plotted as shown.

UJT Parameters

1. Interbase Resistance (RBB) :

This is equal to the sum of RBI and RS2' i.e., Rss = RBI + RB2 when theemitter is open circuited

(IE = 0). The value of Rss' along with themaximum power dissipation PD(max)' determine the

maximum value of Vss' With IE = 0,

As in the case of other devices PD(max) of the UJT has to be to derated for 6. 11

higher temperatures.

2. Intrinsic Standoff Ratio (11) The intrinsic stand off ratio is

The peak-point voltage is calculated from 11. the supply voltage and the diode

voltage drop;

3. Emitter Saturation Voltage (VE(sat)): This is the emitter voltage when the UJT is operating

in the saturation region of its characteristics (refer to Fig. 4.16). As it is affected by the emitter

current and supply voltage, VE(sat) is specified for given IE and VBB levels.


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4. Peak Point Emitter Current (,pI ): This current is the minimum emitter

current, corresponding to the start of the negative resistance region as shown

in Fig.4.16. The UJT will be triggered into conduction only of IE> I .

The maximum emitter source resistance is

5. Valley Point Current (/)v: This is of significance in some circuits, as it is the maximum

current in the negative resistance region of the characteristics. If the emitter voltage source

resistance is so low that IE is equal to or greater than Iv, the UJT will remain ON when triggered

and will not switch OFF. Hence, the minimum emitter voltage source resistance is

4.4.1Areas of Application of UJT

The negative resistance characteristics of the UJT makes it useful in timing & oscillator circuits

(especially as a Relaxation Oscillator, whose frequency may be varied to provide an excellent

method of motor speed control).

One rather common application of the UJT is the triggering of other devices like the SCR and

thyristors.

3. It is used in pulse and voltage sending circuits.

4. It finds application in sawtooth generator and pulse generator.

5. It is used in switching applications.

6. It is used in Over-voltage Detector circuits.

4.4.2 UJT Relaxation Oscillator

The Relaxation oscillator circuit is given in Fig. 4.17.


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The circuit of a UJT Relaxation Oscillator is given in Fig. 4.17(a). Capacitor e is charged through

RE. When the capacitor voltage Vc reaches the value Vp in time ts' the UJT fires and rapidly

discharges e till the voltage falls to the minimum value Vv. The device then cuts OFF and the

capacitor starts charging again.

The cycle is repeated continuously, generating a sawtooth waveform across e, as shown in

Fig.4.17(b).

The inclusion of external resistances R1 and R4 provide spike waveforms. When the UJT fires, the

sudden surge of current through B I causes a drop across R4 which produces positive-going

voltage spikes, and at the same time negative - going voltage spikes are produced across R I (both

are shown in Fig.4.17(b). Condition for Turn-ON and Turn-OFF For satisfactory operation of the

above oscillator, the following two conditions for the turn-on anrl 11!rn-off of the UJT must be

met. To ensure turn-on, RE must not limit /E at peak point to a value less than /p' It means that

To ensure turn-off of the UJT at the valley point, RE must be large enough to permit IE (at valley

point) to decrease below the specified value of Iv. In other words, drop across RE at valley point

must be less than Iv RE. Hence, condition for turn-off is

Hence, for reliable turn-on and turn-off of the UJT, RE must be in the range


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The charging time constant of the capacitor for voltage VBB is T = CRE, whereas the discharging

time constant is Td = CR8l. The time required to charge upto V (called ramp rise time) is

Similarly, time required by the capacitor to discharge from Vp 10 Vv is

The frequency of oscillation is given by

4.4.3 UJT Control of an SCR

Unijunction transistors are often used in SCR control circuits. Referring to the circuit of Fig.

4.18(a), the diode D, resistor Rl and the zener diode Z provide a low-voltage d.c. supply to the

UJT circuit, obtained from the positive half-cycle of the a.c.supply. The function of the diode D is

to pass only the positive half cycle and blocking the negative half-cycle of the a.c .supply. The

capacitor C is charged through resistor R2 to the UJT firing voltage (The rising capacitor

waveform ab of Fig.4.18(b), and the SCR is triggered into conductionby voltage spike produced

across the resistor R3.


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By adjusting R2, the charging rate of C and the UJT firing time can be chosen. The falling part of

the capacitor waveform, bc, shows the capacitor discharge.

From the waveforms of Fig. 4.18, it is obvious that 1800 of SCR phase control is possible.

4.5 Field Effect Transistor (FET)

Introduction :

A field effect transistor (FET) is a semiconductor device. While a BJT is a current-controlled

device, a FET is a voltage-controlled device. A FET requires very little current, hence its input

resistance is very high, which is its most important advantage over a BJT. There are two types of

FET : the Junction FET and the Metal Oxide Field Effect Transistor (MOSFET). However, we

shall discuss only the Junction Field Effect Transistors (JFET), which are further subdivided into

N-channel and P-channel devices.

4.5.1 Junction Field Effect Transistors

i) N-channel JFET

For fabricating an N-channel JFET, first a narrow bar of N-type semiconductor

material, called the channel, is taken and then two smaller P-type pieces

(the gates) are diffused on opposite sides of its middle part (Fig.4.19(a».


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The ends of the channel are called the Drain (D) and the Source (5). The two pieces of P-type

material are interconnected and a single lead is brought out which is called the gate terminal.

When the gate is left open, a drain-source voltage (VD) is applied, positive at the drain and

negative at the source, so that a drain current (ID) flows as shown in Fig. 4.19(a). When a gate-

source voltage (Vas) is applied, with the gate negative with respect to the source (Fig. 4.19(b)),

the gate-channel PN-junctions are reverse biased.

The block diagram of a P-channel JFET is shown in Fig. 4.20. In this case, the channel is a narrow

bar of P-type semiconductor material, to which two N-type pieces (the gates) are diffused. The

drain-source voltage (VD) is applied, negative to the drain, positive to the source, as shown and

the drain current ID flows from the source to the drain.

2. Curved Region

At point A, the channel resistance begins to be affected by the depletion regions. Further increases

in VDS now produce smaller ID increases, as shown by the curved part of the characteristic. The

increased ID levels, in turn, result in more depletion region penetration and greater channel

resistance.

Eventually, a saturation level of ID is reached, where further VDS increase has no effect on ID' At

the point B on the characteristic where ID levels off, the drain current is known as the drain-

source saturation current (IDSS) (lamA in Fig. 4.24). The shape of the characteristic in the

depletion regions in the channel at the I DSS level is such that they look as if they are ready to

pinch off the channel. Hence the drain-source voltage at this point is known as the pinch-off

voltage (V ) (5.2 V in Fig. 4.24). Part AB is the curved region of the p characteristic.


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3. Pinch-off Region Be

It is also known as saturation region or amplifier region. Here, the JFET operates as a constant

current device because ID is relatively independent of VDS' This is due to the fact that as VDS

increases, channel resistance also increases proportionately, thereby keeping ID practically

constant at I DSS' This is the normal operating region of the JFET when used as an amplifier.

4. Breakdown Region

If VDS is continuously increased (in the pinch-off region) a voltage is reached at which the

reverse-biased gate channel junctions experience avalanche breakdown (at point C on the

characteristic in Fig. 4.24), where ID increases to an excessively high value and the device may be

destroyed.


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Example 4.1

Plot the ID/ VDS characteristics for an N-channel JFET from the following table of current and

voltage levels obtained with VGS = O. Determine IDSS and Vp from the characteristics.

Transfer Characteristics (Fig. 4.27)

The circuit of Fig. 4.23 is used to experimentally obtain the various values for plotting the transfer

characteristic of a given JFET. The drain source voltage is held constant, VGS is adjusted in steps

using the variable resistor R, and the corresponding levels of VGS and ID are recorded. From the

characteristic it is seen that, as -V GS is increased, ID is successively reduced from IDSS at VGS =

0, to ID = ° at Ves = -Vp' The transfer characteristic of the JFET can be derived from the drain

characteristics. A line AB is drawn vertically on the drain characteristic (Fig. 4.25), signifying a

constant VDS level. The corresponding IDand VGS values are recorded and then the transfer

characteristic is drawn. This process is shown in Fig. 4.25.


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P·channel JFET Characteristics

Fig. 4.28 shows a circuit for obtaining the characteristics of a P-channel JFET.

The drain terminal is negative with respect to the base, and the gate terminal is positive with

respect to the source. For plotting the drain characteristic, VGS is kept constant and -VDS is

increased in convenient steps, as shown in Fig. 4.29, The JFET transfer characteristics too have

been shown alongside. It may be noted that these characteristics resemble the characteristics of an

N-channel JFET, except that the voltage polarities are the opposite.


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Referring to the P-channel JFET characteristics of Fig. 4.29, when VGS = 0, IDSS = 12 mA. Now,

when more positive value of VGS are applied, the more is the level of ID reduced till it is cut off

at Vp = +4.5 V. If VGS = -0.5 V is used, higher levels of ID are obtained than when V GS = O. As

it was in the case of the N-channel JFET, forward bias at the gate-channel junction should be

avoided, Hence, as a rule, negative values of VGS are avoided with a P-channel JFET. The

transfer characteristic of the P-channel JFET are obtained experimentally, Alternatively, it can be

derived from the drain characteristic, as shown in Fig. 4.29, just as it was done in the case of an

N-channel JFET.

Example 4.2 The following table of plots of ID and VDS for a FET were obtained with

VGS = O. Draw the drain characteristic and find the values of IDSS and Vp-


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IDSS = 5.5 mA and Vp = 6.25 V from the drain characteristic drawn in Fig. 4.30.


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UNIT 5:AMPLIFIERS & OSCILLATORS

Amplifier is an electronic circuit which is used to amplify ac or dc signals, resulting in

increasing the amplitude from low level to high level. Active devices such as transistor, op-amp,

FET,etc. are used to do the amplification. The amplifier is versatile and essential device

particularly in communication systems where signals are transmitted over long distances and are

weak when received, requiring amplification.

Usually the gain, defined as the ratio of output voltage to the input voltage is very high, and

requires faithful reproduction of input at the output. In the above case the amplifier is referred to

as voltage amplifier. Similarly, if the current, or power, of the signal need to be amplified, then

accordingly, it is called current or power amplifier.

Generally, a portion of the output is fed back to the input for stabilization. The feed back can be

used to aid or oppose the input. If the output feedback at the input opposes the input or applied in

phase opposition with the input then the amplifier is called negative feedback amplifier. If the

output feedback at the input aid the input or applied in phase with the input then the amplifier is

called positive feedback amplifier. The positive feedback is used for oscillators (a circuit produces

oscillation using dc supply).

The amplifiers with negative feedback is discussed below.

Classification of the amplifiers:

Amplifiers are classified according to frequency of operation, mode of operation, biasing

condition, configuration used, methods of feed back, etc. as follows:

1.Based on its input:

a. Small signal amplifiers.

b. Large signal amplifiers

2.Based on its output;

a. Voltage amplifiers

b. Current amplifiers

c. Power amplifiers

3 Based on its frequency;

a. Audio frequency amplifiers

b. Radio frequency amplifiers

c. Inter-mediate frequency amplifiers.

d. Ultra high frequency amplifiers.

4.Based on biasing conditions:

a.Class ‗A‘amplifiers

b.Class ‗B‘amplifiers


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c.Class ‗C‘amplifiers

d.Class ‗AB‘amplifiers, etc.

5. Based on configuration:

a. Common base amplifier

b. Common emitter amplifier

c. Common collector amplifier

Some of the important parameters relating to amplifiers are discussed below:

Decibel notation for the gain:

The gain of the amplifier is very high, particularly the open loop gain.is very large.Hence to

denote the large gains in such cases, a logarithm scale is used.The notation used using logarithms

is called Bel. Named after its inventor Alexander Graham Bell, and was the unit used extensively

in telephony in earlier days to represent large parametric values.

The unit Bel. Is very large and hence its sub unit deci-bel is used

1 bel = 10 dci-bels.

Taking the power levels of output to input, this is expressed as :

AP =Log10 bels.

As referred earlier bel. Being a large unit, deci-bel notation is used


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Fig : Amplifier power gain is measured in decibels(db)

Advantages of representing in db.

We have seen that the overall gain of the multistage amplifier is the product of individual

gains.Instead of multiplying the individual gains and representing,the log scale permits us to add

individual gains in db.The deci-bel notation allows us to represent a very small like 10-6

Volts or a

very large values like 10+6

using deci-bels.

The hearing effects perceived by the ear is logarithmic hence use of db. notation will become very

usefull while representing figures in audio frequency amplifiers.

Oscillators

An oscillator is a circuit that produces an output waveform with only a dc power supply

input. The range of frequencies required by electronic devices may range from a few hertz into the

megahertz region, and these signals are generally produced by oscillators. In this chapter we focus

on sine-wave oscillators.

Oscillators are circuits that produce an output waveform without an external signal source. The

key to oscillator operation is positive feedback. A positive feedback network produces a

feedback voltage ( ) that is in phase with the input signal ( ) as shown in Figure 1. The

amplifier shown in the figure produces a 180° voltage phase shift, and the feedback network

introduces another 180° voltage shift. This results in a combined 360° voltage phase shift, which

is the same as a 0° shift. Therefore, is in phase with . (Positive feedback can also be achieved

by using an amplifier and a feedback network that both generate a 0° phase shift.)

Figure 5.1 illustrates the basic principle of how the oscillator produces an output waveform

without any input signal. In Figure 5.1 , the switch is momentarily closed, applying an input


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signal to the circuit. This results in a signal at the output from the amplifier, a portion of which is

fed back to the input by the feedback network.

In Figure 5.1(b) -, the switch is now open, but the circuit continues to oscillate because the

feedback network is supplying the input to the amplifier. The feedback network delivers an input

to the amplifier, which in turn generates an input for the feedback network. This circuit action is

referred to as regenerative feedback and is the basis for all oscillators.

. FIGURE 5.1 Regenerative feedback

There is one other requirement for oscillator operation. The circuit must fulfill a condition

referred to as the Barkhausen criterion.

We know that the active component in a feedback amplifier produces a voltage gain (Av ) while

the feedback network introduces a loss or attenuation (αv). In order for an oscillator to work

properly, the following relationship must be met:

Av αv = 1 Av

This relationship is called the Barkhausen criterion. If this criterion is not met, one of the

following occurs:


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1. If Av αv < 1 , the oscillations die out after a few cycles.

2. If Av αv > 1 , the oscillator drives itself into saturation and cutoff clipping.

The Barkhausen criterion for oscillations can be summarized as follows :

In order to make a circuit to work as an oscillator it should satisfy the following Barkhausen

criterion

1.The total phase shift around a loop should be 0 or 360°.

2. The product of magnitude of open loop gain A and the feedback factor αv should be equal to unity.

FIGURE 5.2 The effects of Av αv on oscillator operation.

If, Av αv < 1 each oscillation results in a lower-amplitude signal being fed back to the input (as

shown in Figure 2a). After a few cycles, the signal fades out. This loss of signal amplitude is

called damping. If Av αv > 1, each oscillation results in a larger and larger signal being fed back to

the input (as shown in Figure 5.2b). In this case, the amplifier is quickly driven into clipping.

When Av αv = 1, each oscillation results in a consistently equal signal being fed back to the input

(as shown in Figure 5.2c). One final point: Since there is always some power loss in the resistive

components, in practice Av αv must always be equal to 1.


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Positive feedback Amplifier-Oscillator

1. A transistor amplifier with proper +ve feedback can act as an oscillator.

S

Vout

Vin Vf

t t t

2. The circuit needs only a quick trigger signal to start the oscillations. Once the oscillations

have started, no external signal source is necessary.

3. In order to get continuous undamped output from the circuit, the following condition must

be met;

Av αv =1

where AV = voltage gain of amplifier without feedback.

αv = feedback fraction.

This relation is also called Barkhausen criterion

Essentials of Transistor Oscillator

Fig. below shows the block diagram of an oscillator. Its essential components are:

1. Tank Circuit: It consists of inductance coil (L) connected in parallel with capacitor(C ).

The frequency of oscillations in the circuit depends upon the values of inductance of the

coil and capacitance of the capacitor.

2. Transistor Amplifier: The transistor amplifier receives d.c. power from the battery and

changes it into a.c. power for supplying to the tank circuit. The oscillations occurring in

the tank circuit are applied to the input the transistor amplifier. The output of the transistor

can be supplied to the tank circuit to meet the losses.

3. Feedback circuit: The feedback circuit supplies a part of collector energy to the tank

circuit in correct phase to aid the oscillations. I e. To provide positive feedback.

Amplifier

Feedback

network


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Fig. 5.3 Block diagram of Transistor Oscillator

Types of Transistor Oscillators

1. Colpitt’s Oscillator

2. Hartley Oscillator

3. Phase Shift Oscillator

4. Crystal Oscillator

Colpitt’s Oscillator

The Colpitt‘s and Hartly oscillators depends for their operation on the principle of tank circuit

explained below.

Oscillatory circuit using LC tank circuit :

A circuit, which produces electrical oscillations of any desired frequency, is known as an

oscillatory circuit or tank circuit.

A simple oscillatory circuit consists of a capacitor C and inductance coil L in parallel as shown in

figure below. This electrical system can produce electrical oscillations of frequency determined

by the values of L and C.

― An electronic device that generates sinusoidal oscillations of desired frequency is known as

sinusoidal oscillator‖

S

++ ++

L C _ _ _ _

Fig.1 Fig. 2

Transistor

Amplifier

Feedback

circuit


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_ _

+ +

Fig. 5.4 Fig. 5.5

Circuit operations- Assume capacitor is charged from a d. c. source with a polarity as

shown in fig.

When switch S is closed as shown in fig2, the capacitor will discharges through

inductance, and the electron flow will be in the direction indicated by the arrow. This

current flow sets up magnetic field around the coil. Due to the inductive effect, the current

builds up slowly towards a maximum value. The circuit current will be maximum when

the capacitor is fully discharged. Hence the electrostatic energy across the capacitor is

completely converted into magnetic field energy, around the coil.

Once the capacitor is discharged, the magnetic field will begin to collapse and produce a

counter emf. According to Lenz‘s law the counter emf will keep the current flowing in the

same direction. The result is that the capacitor is now charged with opposite polarity

making upper plate of capacitor –ve and lower plate +ve as shown in fig. 3.

After the collapsing field has recharged the capacitor, the capacitor now begins to

discharge and current now flows in the opposite direction as shown in fig.4.

The sequence of charge and discharge results in alternating motion of electrons or an

oscillating current. The energy is alternately stored in the electric field of the capacitor C

and the magnetic field of the inductance coil L . This interchange of energy between L and

C is repeated over and again resulting in the production of Oscillations.

Waveform- In practical tank circuit, there are resistive and radiation losses in the coil and

dielectric losses in the capacitor. During each cycle a small part of the originally imparted energy

is used up, to overcome these losses. The result is that the amplitude of oscillating current

decreases gradually and eventually it become zero. Therefore tank circuit produces damped

oscillations.

Frequency of oscillations- The expression for frequency of oscillation is given by,

LCf r

2

1 -------------------------------(1)


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Undamped Oscillations from Tank Circuit

A tank circuit produces damped oscillations. In practice we need continuous un-damped

oscillations for the successful operation of electronics equipment. In order to make the oscillations

in the tank circuit un-damped it is necessary to supply correct amount of energy to the tank circuit

at the proper time intervals to meet the losses.

The following conditions must be fulfilled;

1. The amount of energy supplied be such so as to meet the losses in the tank and the a.c.

energy removed from the circuit by the load. For example if losses in LC circuit amount ot

5 mW and a.c. output being taken is 100 mW, then power of 105mW should be

continuously supplied to the circuit.

2. The applied energy should have the same frequency as that of the oscillations in the tank

circuit.

3. The applied energy should be in phase with the oscillations set up in the tank circuit.

The Colpitts Oscillator

The Colpitts oscillator is a discrete LC oscillator that uses the tank circuit described above.A pair

of tapped capacitors and an inductor is used to produce regenerative feedback. A Colpitts

oscillator is shown in Figure -5.5. The operating frequency is determined by the tank circuit. By

the formula:

T

FIG -5.5 Colpitts oscillator.

The key to understanding this circuit is knowing how the feedback circuit produces its 180° phase

shift and the other 180° is produced from the inverting action of the CE amplifier. The feedback

circuit produces a 180° voltage phase shift as follows:

1. The amplifier output voltage is developed across .

2. The feedback voltage is developed across .


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3. As each capacitor causes a 90° phase shift, the voltage at the top of (the output voltage)

must be 180° out of phase with the voltage at the bottom of (the feedback voltage).

The first two points are fairly easy to see. is between the collector and ground. This is where

the output is measured.

is between the transistor base and ground, or in other words, where the input is measured. Point

three is explained using the circuit in Fig -5.6.

FIG -5.6

Fig 5. 6 is the equivalent representation of the tank circuit in the Colpitts oscillator. Let‘s assume

that the inductor is the voltage source and it induces a current in the circuit. With the polarity

shown across the inductor, the current causes potentials to be developed across the capacitors with

the polarities shown in the figure. Note that the capacitor voltages are 180° out of phase with each

other. When the polarity of the inductor voltage reverses, the current reverses, as does the

resulting polarity of the voltage across each capacitor (keeping the capacitor voltages 180° out of

phase).

The value of the feedback voltage is determined (in part) by the of the circuit. For the Colpitts

oscillator, is defined by the ratio of . By formula:

Av = XC2/X C1 or C 1/C 2

As with any oscillator, the product of A β must be slightly greater than 1. As mentioned earlier

and . Therefore:

Av = Vout/Vf = C2/C1

As with any tank circuit, this one will be affected by a load. To avoid loading effects (the circuit

loses some efficiency), the output from a Colpitts oscillator is usually transformer-coupled to the

load, as . Capacitive coupling is also acceptable so long as:

where is the total capacitance in the feedback network


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Hartley oscillator:

The Hartley oscillator is similar to the Colpitts except that it uses a pair of tapped coils instead of

two tapped capacitors. For the circuit in Fig -5.7, the output voltage is developed across and

the feedback voltage is developed across . The attenuation caused by the feedback network (

) is found as:

= XL2/X L1 or L 2/L 1

The tank circuit, just like in the Colpitts, determines the operating frequency of the Hartley

oscillator. As the tapped inductors are in series, the sum of must be used when calculating

the value of .

FIG 5.7 Hartley oscillator.

Demerits of Oscillator using Tank Circuit

1. They suffer for frequency instability and poor waveform

2. They cannot be used to generate low frequencies, since they become too-much bulky and

expensive too.

RC Phase Shift Oscillator

Fig5.8: Circuit diagram of RC phase shift Oscillator


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It consists of a conventional single transistor amplifier and a RC phase shift circuit. The

RC phase shift circuit consists of three sections R1C1, R2C2, and R3C3.At some particular

frequency f0 the phase shift in each RC section is 600 so that the total phase shift produced

by the RC network is 1800. The frequency of oscillation is given by

62

1

RCfo ---------------------------(6)

When the circuit is switched ON it produces oscillations of frequency determined by

equation 1. The output EO of the amplifier is feedback to RC feedback network. This

network produces a phase shift of 1800 and the transistor gives another 180

0 shift. Thereby

total phase shift of the output signal when fed back is 3600

Merits-

1. They do not require any transformer or inductor thereby reduce the cost.

2. They are quite useful in the low frequency range where tank circuit oscillators

cannot be used.

3. They provide constant output and good frequency stability.

Demerits –

1. It is difficult to start oscillations.

2. The circuit requires a large number of components.

3. They cannot generate high frequencies and are unstable as variable frequency generators.

Crystal Oscillator

Crystal-Controlled Oscillators :

In applications where extremely stable operating frequencies are required, the oscillators that we

have studied so far come up short. They can experience variations in both frequency and

amplitude for several reasons:

If the transistor is replaced, it may have slightly different gain characteristics.

If the inductor or capacitor is changed, the operating frequency may change.

If circuit temperature changes, the resistive components will change, which can cause a

change in both frequency and amplitude.

In any system where stability is paramount, crystal-controlled oscillators are used. Crystal-

controlled oscillators use a quartz crystal to control the operating frequency.

The key to the operation of a crystal-controlled oscillator is the piezoelectric effect, which means

that the crystal vibrates at a constant rate when it is exposed to an electric field. The physical

dimensions of the crystal determine the frequency of vibration. Thus, by cutting the crystal to


SJBIT/ECE Dept

specific dimensions, we can produce crystals that have very exact frequency ratings. There are

three commonly used crystals that exhibit piezoelectric properties. They are Rochelle salt, quartz,

and tourmaline. Rochelle salt has the best piezoelectric properties but is very fragile. Tourmaline

is very tough, but its vibration rate is not as stable. Quartz crystals fall between the two extremes

and are the most commonly used.

Quartz crystals are made from silicon dioxide ( ). When used in electronic components, a

thin slice of crystal is placed between two conductive plates, like those of a capacitor. Remember

that its physical dimensions determine the frequency at which the crystal vibrates.

FIG 5.9 Crystal symbol, equivalent circuit, and frequency response.

The electrical operation of the crystal is a function of its physical properties, but it can still be

represented by an equivalent circuit. Following arte the components in the equivalent circuit

which represents specific crystal characteristics:

= the capacitance of the crystal itself

= the mounting capacitance, or the capacitance between the crystal and the two conducting

plates

L = the inductance of the crystal

R = the resistance of the crystal

The primary points are as follows:

1. At the crystal acts as a series resonant circuit.

2. At the crystal acts as a parallel resonant circuit.


SJBIT/ECE Dept

This means that a crystal can be used to replace either a series or a parallel resonant LC circuit. It

should also be noted that there is very little difference between and . The spacing between

these frequencies in the response curve (Figure 8) is exaggerated for illustrative purposes only.

A crystal can produce outputs at its resonant frequency and at harmonics of that resonant

frequency. This concept was introduced when we looked at tuned class C amplifiers. The resonant

frequency is often referred to as the fundamental frequency, and the harmonic frequencies as

overtones. Crystals are limited by their physical dimensions to frequencies of 10 MHz or below.

If the circuit is tuned to one of the harmonic frequencies of the crystal (overtones), then we can

produce stable outputs much higher than the 10 MHz limit of the crystal itself. This type of circuit

is said to be operating in overtone mode.

A Colpitts oscillator can be modified into a crystal-controlled oscillator (CCO) as shown in Figure

9. Note that the crystal is in series with the feedback path and is operating in series-resonant mode

( ). At the impedance of the crystal is almost zero and allows the feedback signal to pass

unhindered. As the crystal has an extremely high Q, the circuit will only oscillate over a very

narrow range of frequency. By placing a crystal in the same relative position, Hartley and Clapp

oscillators can be converted into CCOs.

Fig5.10: Circuit diagram of Transistor crystal oscillator

Figure shows the transistor crystal oscillator. The crystal will act as parallel –tuned circuit.

At parallel resonance, the impedance of the crystal is maximum. This means that there is a

maximum voltage drop across C2. This in turn will allow the maximum energy transfer

through the feedback network.


SJBIT/ECE Dept

The feedback is +ve. A phase shift of 1800 is produced by the transistor. A further phase

shift of 1800 is produced by the capacitor voltage divider. This oscillator will oscillate only

at fp.

Where fp = parallel resonant frequency ie the frequency at which the vibrating crystal

behaves as a parallel resonant circuit.

m

m

T

T

p

CC

CCCwhere

LCf

2

1

Advantages

1. Higher order of frequency stability

2. The Q-factor of the crystal is very high.

Disadvantages

1. Can be used in low power circuits.

2. The frequency of oscillations cannot be changed appreciably.


SJBIT/ECE Dept

UNIT -6

OPERATIONAL AMPLIFIER

Op-Amp (operational amplifier) is basically an amplifier available in the IC form. The word

―operational‖ is used because the amplifier can be used to perform a variety of mathematical

operations such as addition, subtraction, integration, differentiation etc.

Fig6.1 below shows the symbol of an Op-Amp.

+VCC

V1

Inverting input

V2

Noninverting input

-VEE

Fig.6.1 Symbol of Op-Amp

It has two inputs and one output. The input marked ―-― is known as Inverting input and the input

marked ―+‖ is known as Non-inverting input.

If a voltage Vi is applied at the inverting input ( keeping the non-inverting input at ground)

as shown below.

Vi

VO

t

t

Vi VO

Fig.6.2 Op-amp in inverting mode

The output voltage Vo= -AVi is amplified but is out of phase with respect to the input signal by

1800.


SJBIT/ECE Dept

If a voltage Vi is fed at the non-inverting input ( Keeping the inverting input at ground) as

shown below.

Vo

VO

t

Vi

t

Fig.6.3 Op-Amp in Non-inverting mode

The output voltage Vo= AVi is amplified and in-phase with the input signal.

If two different voltages V1 and V2 are applied to an ideal Op-Amp as shown below.

V1

VO

V2

Fig.6.4 Ideal Op-Amp

The output voltage will be Vo = A(V1 – V2)

i.e the difference of the tow volatages is amplified. Hence an Op-Amp is also called as a High

gain differential amplifier.


SJBIT/ECE Dept

Note: Op-Amp is 8 pin IC ( named as μA 741) with pin details as shown.

OFFSET NULL NO CONNECTION

+VCC

INVERTING I/P

OUTPUT

NON –INVERTING I/P

-VEE OFFSET NULL

Fig.6. 5 Pin details of Op-Amp

Block Diagram of an Op-AMP

An Op-Amp consists of four blocks cascaded as shown above

Fig. 6.6 Block diagram of an Op-Amp

Input stage: It consists of a dual input, balanced output differential amplifier. Its function is to

amplify the difference between the two input signals. It provides high differential gain, high input

impedance and low output impedance.

Intermediate stage: The overall gain requirement of an Op-Amp is very high. Since the input

stage alone cannot provide such a high gain. Intermediate stage is used to provide the required

additional voltage gain.

It consists of another differential amplifier with dual input, and unbalanced ( single ended) output

1 8

2 7

μA 741

3 6

4 5


SJBIT/ECE Dept

Buffer and Level shifting stage

As the Op-Amp amplifies D.C signals also, the small D.C. quiescent voltage level of previous

stages may get amplified and get applied as the input to the next stage causing distortion the final

output.

Hence the level shifting stage is used to bring down the D.C. level to ground potential, when no

signal is applied at the input terminals. Buffer is usually an emitter follower used for impedance

matching.

Output stage- It consists of a push-pull complementary amplifier which provides large A.C.

output voltage swing and high current sourcing and sinking along with low output impedance.

Concept of Virtual ground

We know that , an ideal Op-Amp has perfect balance (ie output will be zero when input voltages

are equal).

Hence when output voltage Vo = 0, we can say that both the input voltages are equal ie V1 = V2.

V1

Vo

Ri

V2

Fig. 6.7(a) Concept of Virtual ground

Since the input impedances of an ideal Op-Amp is infinite ( Ri = ). There is no current flow

between the two terminals.

Hence when one terminal ( say V2 ) is connected to ground (ie V2 = 0) as shown.

VCC

V1 =V2 =0

Ri VO

V2=0

VEE

Fig. 6.7(b) Concept of Virtual ground


SJBIT/ECE Dept

Then because of virtual ground V1 will also be zero.

Applications of Op-Amp

An Op-Amp can be used as

1. Inverting Amplifer

2. Non-Iverting Amplifer

3. Voltage follower

4. Adder ( Summer)

5. Integrator

6. Differentiator

Definitions

1. Slewrate(S): It is defined as ― The rate of change of output voltage per unit time‖

sec/voltsdt

dVs O

Ideally slew rate should be as high as possible.But its typical value is s=0.5 V/μ-sec.

2. Common Mode Rejection Ratio(CMRR): It is defined as ― The ratio of differential

voltage gain to common-mode voltage gain‖.

CM

d

A

ACMRR

Ideally CMRR is infinite, but its typical value is CMRR = 90 dB

3. Open Loop Voltage Gain (AV): It is the ration of output voltage to input voltage in the

absence of feed back.

Its typical value is AV = 2x105

4. Input Impedance (Ri):It is defined as ― The impedance seen by the input(source) applied

to one input terminal when the other input terminal is connected to ground.

Ri ≈ 2MΩ

5. Output Impedance (RO): It is defined as ― The impedance given by the output (load) for

a particular applied input‖.

Ro ≈ 75Ω


SJBIT/ECE Dept

Note: Typical values given above are for Op-Amp IC=μA741

Characteristics of an Ideal Op-Amp

An ideal Op-Amp has the following characteristics.

1. Infinite voltage gain ( ie AV =∞)

2. Infinite input impedance (Ri = ∞)

3. Zero output impedance(Ro =0)

4. Infinite Bandwidth (B.W. = C

5. Infinite Common mode rejection ratio (ie CMRR =∞)

6. Infinite slew rate (ie S=∞)

7. Zero power supply rejection ratio ( PSRR =0)ie output voltage is zero when power supply

VCC =0

8. Zero offset voltage(ie when the input voltages are zero, the output voltage will also be

zero)

9. Perfect balance (ie the output voltage is zero when the input voltages at the two input

terminals are equal)

10. The characteristics are temperature independent.

Inverting Amplifier

An inverting amplifier is one whose output is amplified and is out of phase by 1800 with

respect to the input

Rf

i2

R1

V1 i1 G=0

VO

Fig.6.8 Inverting Amplifier


SJBIT/ECE Dept

The point ―G‖ is called virtual ground and is equal to zero.

By KCL we have

21 ii

f

oi

R

V

R

V 00

1

f

oi

R

V

R

V

1

i

f

O VR

RV

1

Where 1R

R f is the gain of the amplifier and negative sign indicates that the output is inverted

with respect to the input.

VO

Vi

t t

Fig.6. 9 Waveforms of Inverting Amplifers

Non- Inverting Amplifier

A non-inverting amplifier is one whose output is amplified and is in-phase with the input.

Rf

i2

R1

V1 i1 G=Vi

VO

Vi

Fig.6.10 Non Inverting Amplifiers

By KCL we have

21 ii


SJBIT/ECE Dept

f

Oii

R

VV

R

V

1

0

1

0

1

R

R

V

ViV

R

VV

R

V

f

i

f

iOi

1

1R

R

V

V f

i

O

i

f

i

O

R

R

V

V1

i

fV

R

RV

1

0 1

Where 1

1R

R fis the gain of the amplifier and + sign indicates that the output is in-

phase with the input.

Voltage follower

VO

Vi VO

Vi

t t

Fig. 6.11 Voltage follower

Voltage follower is one whose output is equal to the input.

The voltage follower configuration shown above is obtained by short circuiting ―Rf‖ and open

circuiting ―R1‖ connected in the usual non-inverting amplifier.


SJBIT/ECE Dept

Thus all the output is fed back to the inverting input of the op-Amp.

Consider the equation for the output of non-inverting amplifer

i

fV

R

RV

1

0 1

When Rf = 0 short circuiting

R1= ∞ open circuiting

iV0

1V O

iO VV

Therefore the output voltage will be equal and in-phase with the input voltage. Thus voltage

follower is nothing but a non-inverting amplifier with a voltage gain of unity.

Inverting Adder

Inverting adder is one whose output is the inverted sum of the constituent inputs

R1

Rf

V1 i1

If

R2

V2 i2 G=0

VO

V3 R3 i3

Fig.6.12. Inverting Adder

By KCL we have

321 iiii f

3

3

2

2

1

1 0000

R

V

R

V

R

V

R

V

f

O


SJBIT/ECE Dept

3

3

2

2

1

1

R

V

R

V

R

V

R

V

f

O

3

3

2

2

1

1

R

V

R

V

R

VRV fO

If R1 = R2 = R3 =R then

321 VVVR

RV

f

O

If Rf = R then

VO = -[ V1 + V2 + V3 ]

Hence it can be observed that the output is equal to the inverted sum of the inputs.

Integrator

C

i2

R1

V1 i1 G=0

VO

Fig, 6.13 Integrator

An integrator is one whose output is the integration of the input.,

By KCL we have,

121 ii


SJBIT/ECE Dept

iO

Oi

O

O

O

O

ii

VRCdt

dV

dt

dVC

R

V

haveweinandgsubstituin

dt

dVCiei

iCdt

dV

dtiC

V

dtiC

V

havewesimilarlyand

R

V

R

Vi

havewefigureabovetheFrom

1

132

3..

1

1

10

20

2

2

2

2

1

dtVRC

V iO

1

Differentiator

A differentiator is one whose output is the differentiation of the input

R

i2

V1 i1 G=0

VO

By KCL we have


SJBIT/ECE Dept

R

V

dt

dVC

haveweinandngsubstituti

R

V

R

Vi

havewesimilarlyand

dt

dVCi

iCdt

dV

dtiC

V

havewefigureabovetheFrom

ii

Oi

OO

i

i

i

132

30

2.

1

1

1

2

1

1

1

21

dt

dVRCVO


SJBIT/ECE Dept

UNIT 7

COMMUNICATION SYSTEMS

Radio Broadcasting, Transmission and Reception

Radio communication means the radiation of radio waves by the transmitting station, the

propagation of these waves through space and their reception by the radio receiver.

Fig.7.1 below shows the general principle of radio broadcasting, transmission and reception. It

essentially consists of transmitter, transmission of radio waves and radio receiver.

Rxg antenna

Transmitting

Antenna

Fig7.1: Block diagram of Communication system

Transmitter-

It essentially consists of microphone, audio amplifiers, oscillator and modulator.

A microphone is a device which converts sound waves into electrical waves. The output of

microphone is fed to multistage audio amplifier for raising the strength of weak signal.The job of

amplification is performed by cascaded audio amplifiers. The amplified output from the last audio

amplifier is fed to the modulator for rendering the process of modulation.The function of the

oscillation is to produce a high frequency signal called a carrier wave. Usually crystal oscillator is

used for the purpose.The amplified audio signal and carrier waves are fed to the modulator. Here

the audio signal is superimposed on the carrier wave in suitable manner. The resultant waves are

called modulated waves, and the process is called modulation. The process of modulation permits

the transmission of audio signal at the carrier signal (frequency). As the carrier frequency is very

high, therefore the audio signal can be transmitted to large distances. The radio waves from the

transmitter are fed to the transmitting antenna or aerial from where these are radiated into space.

The transmitting antenna radiates the radio waves in space in all directions. These radio waves

travel with the velocity of light 3x108m/sec. The radio waves are electromagnetic waves and

possess the same general properties.

Audio

Amplifiers

Oscillator Modulator

Radio

receiver


SJBIT/ECE Dept

Receiver-

On reaching the receiving antenna, the radio waves induce tiny emf in it. This small voltage is fed

to the radio receiver. Here the radio waves are first amplified and then signal is extracted from

them by the process of demodulation. The signal is amplified by audio amplifiers and then fed to

the speaker for reproduction into sound waves.

Need for modulation

The advantages of using modulation technique is given below :

Reduce the height of the antenna

Increase the range of communication

Avoids mixing of signals

Allows multiplexing of signals

Improves the signal to noise ratio.

Avoids interference of the bands by providing gaurd band

Improve quality of reception

Provide possibility for wireless transmission.

1. Practical Antenna length-theory shows that in order to transmit a wave effectively the

length of the transmitting antenna should be approximately equal to the wavelength of the

wave.

metresHzfrequencyfrequency

Velocitywavelength

)(

103 8

As the audio frequencies range from 20 Hz to 20Khz, if they are transmitted directly into space,

the length of the transmitting antenna required would be extremely large. For example to radiate a

frequency of 20 KHz directly into space we would need an antenna length of 3x108 /20x10

3 ≈

15,000 meters. This is too long to be constructed practically. But instead we operate at higher

frequencies, say in MHz range, the antenna dimension comes down.The operation at this

frequencies is possible only with modulation techniques.

2. Operating Range- The energy of a wave depends upon its frequency. The greater the

frequency of the wave, the greater the energy possessed by it. As the audio signal frequencies

are small, therefore these cannot be transmitted over large distances if radiated directly into

space.

3. Avoids mixing of signals : The transmission band of 20Hz to 20KHz contains many signals

generated from different sources. These signals are translated to different portion of the

electromagnetic spectrum called channels, having different band widths, by providing

different carrier frequencies.These frequencies are separated at the receiver while receiving.

4. Allows multiplexing of signals; The modulation permits multiplexing of signals, meaning

simultaneous transmission of more signals on the same channel.Example MW and SW

transmission with frequencies allotted to different bands and transmitted on the same channel


SJBIT/ECE Dept

5. Improves the signal to noise ratio.: The baes band signals which are in the audio frequency

range are susceptible to noise. The radio frequencies which are used for modulation are

immune to noise. Hence modulating the message signals with the carrier helps in improving

the signal to noise ratio.

6. Avoids interference of the bands by providing gaurd band : Special guard bandsare

provided between bands to guard the interference of adjacent band signals.This is usually

around 25KHz.

7. Improve quality of reception : Different techniques of transmission like digital modulation

improves the quality of reception by reducing the noise in the system.

8. Wireless communication- Radio transmission should be carried out without wires.

Modulation- The process of changing some characteristics (example amplitude, frequency or

phase) of a carrier wave in accordance with the intensity of the signal is known as modulation.

Types of modulation-

1. Amplitude modulation

2. Frequency modulation

3. Phase modulation

1. Amplitude modulation

When the amplitude of high frequency carrier wave is changed in accordance with the intensity of

the signal, it is called amplitude modulation.

The following points are to be noted in amplitude modulation .

1. The amplitude of the carrier wave changes according to the intensity of the signal.

2. The amplitude variations of the carrier wave is at the signal frequency fS.

3. The frequency of the amplitude modulated wave remains the same ie.carrier frequency fC.

es

t

ec

t

e

t

Fig7.2: AM waveforms


SJBIT/ECE Dept

Modulation factor

The ratio of change of amplitude of carrier wave to the amplitude of normal carrier wave is called

modulation factor.

m=(amplitude change of carrier wave) / normal carrier wave(unchanged)

A + No Signal =

carrier m=0/A = 0%

2A

+ =

carrier signal

m=(2A-A)/A =1

Modulation factor is very important since it determines the strength and quality of the transmitted

signal. The greater the degree of modulation, the stronger and clearer will be the audio signal. It

should be noted that if the carrier is overmodulated (ie m>1) distortion will occur at reception.

Analysis of amplitude modulated wave

signal

mEc

EC Ec

Carrier

AM Wave

A carrier wave is represented by ec = Eccoswct-------------------(1)


SJBIT/ECE Dept

Where ec ------instantaneous voltage of carrier.

Ec -----amplitude of carrier.

In amplitude modulation, the amplitude EC of the carrier wave is varied in accordance with

intensity of the signal as shown in figure.

Suppose m=modulation index, then change in carrier amplitude =mEc.

Amplitude or Emax of the signal = mEc.

es =mEccoswst---------------------------------(2)

where mEc is the amplitude of the signal.

es ---------instantaneous voltage of the signal.

The amplitude of the carrier varies at signal frequency fs. Therefore the amplitude of AM wave is

given by,

Ec +mEccoswst = Ec(1+mcoswst)

The instantaneous voltage of AM wave is,

e = Amplitude x coswct

)3()cos(2

)cos(2

cos

])cos()[cos(2

cos

]coscos2[2

cos

coscoscos

cos)cos1(

twwmE

twwmE

twEe

twwtwwmE

twE

twtwmE

twE

twtwmEtwE

twtwmEe

scc

scc

cC

scscc

cC

csC

cC

csCcC

csC

The AM wave is equivalent ot thesummatoin of theree sinusoidal waves: aone having

amplitude EC and frequency fc, the second having amplitde mEc/2 and frequency (fc + fs)

and the third having amplitude mEc/2 and frequency fc – fs..

The AM wave consists three frequencies viz, fc, fc+fs . The first frequency is the carrier

frequency. Thus the process of modulation doesnot change the original carrier frequency

but produces two new frequencies fc+fs and fc – fs. which are called sideband frequencies.

In amplitude modulation the bandwidth is from fc – fs. to fc+fs ie 2fs ie twice the signal

frequency.

Frequency spectrum of an amplitude modulated wave is shown in figure below

EC

mEC/2

fC-fS fC fC+fS frequency

Fig7.3: Frequency Spectrum of AM wave


SJBIT/ECE Dept

)7(2)6(

)5(

,

)6(2

2

2

21

242

)5(4

2222

)4(2

2

),3(

2

2

22

22222

22

22

2

2

m

m

equn

equn

P

P

sidebandsbycarriedpowertotaloffractionAlso

m

R

E

m

R

E

R

Em

R

E

PPPwaveAMofpowerTotal

R

Em

R

mE

R

mE

PsidebandsofpowerTotal

R

E

R

E

Ppowercarrier

equationfrom

T

S

C

CCC

SCT

C

CC

S

C

c

C

Limitations of Amplitude Modulation

1. Noisy Reception- In an AM wave, the signal is in the amplitude variations of the carrier.

Practically all the natural and man made noises consist of electrical amplitude disturbances.

As a radio receiver cannot distinguish between amplitude variations that represent noise

and those that contain the desired signal. Therefore reception is very noisy.

2. Low efficiency- In AM useful power is in the sidebands as they contain the signal. An

AM wave has low sideband power.

For example even if modulation is 100 % ie m=1.

33.012

1

2 2

2

m

m

p

P

T

S

PS=33% of PT

Sideband power is only one-third of the total power of AM wave. Hence efficiency of this type of

modulation is low.


SJBIT/ECE Dept

3. Lack of audio quality- In order to attain high fidelity reception, all audio frequencies upto

15 Khz must be reproduced. This necessitates a bandwidth of 30 KHz since both

sidebands must be reproduced (2fs). But AM broadcasting stations are assigned with

bandwidth of only 10 KHz to minimize the interference from adjacent broadcasting

stations. This means that the highest modulating frequency can be 5 Khz which is hardly

sufficient to reproduce the music properly.

Frequency modulation

“ When the frequency of carrier wave is changed in accordance with the intensity of the signal, it

is called frequency modulation‖.

Here the amplitude of the modulated wave remains the same ie carrier wave amplitude.

The frequency variations of carrier wave depend upon the instantaneous amplitude of the

signal.

When the signal approaches positive peaks as the B and F, the carrier frequency is

increased to maximum and during negative peak, the carrier frequency is reduced to

minimum as shown by widely spaced cycles.

signal

b f

a c e g t

d

t

Carrier

t

FM wave

Advantages of FM

1. It gives noiseless reception.

2. The operating range is quite large.

3. The efficiency of transmission is very high.


SJBIT/ECE Dept

Comparision of AM and FM.

Amplitude Modulation Frequency Modulation

1) The amplitude of the carrier is varied The frequency of the carrier is varied

In accordance with the signal in accordance with the signal

2) The modulation index ‗m‘ is <1 The modulation index ‗β‘ is >1

3) Transmitted power is dependent Transmitted power is independent

on modulation index ‗m‘ on modulation index ‗β‘

4) The amplitude of the side bands are The amplitude of the side bands are

dependent on the modulation index‘m‘ vary with the modulating index and

and are always less than the carrier can be calculated using Bessel functions

5) Contains only two side bands Contains multiple side bands

6) Susceptible to noise due to Immune to noise as amplitudes are

The method of modulation used. Clipped

7) Less efficient as carrier contains More efficient as it contains more side

more power than side bands bands and hence more signal power.

8) De-modulation is simple De-modulation is more complex.

Demodulation

The process of recovering the audio signal from the modulated wave is known as

demodulation or detection.

At the broadcasting station, modulation is done to transmit the audio signal over larger

distances. When the modulated wave is picked up the receiver, it is necessary to recover the

audio signal from it. This process is accomplished in the radio receiver and is called

demodulation.

AM diode detector

Fig. below shows a simple diode detector employing a diode and a filter circuit. A detector circuit

performs the following two functions.

1. It rectifies the modulated wave.

2. It separates the audio signal from the carrier.


SJBIT/ECE Dept

Speaker

Audio output

Rectified

Wave

AM Wave

Fig7.4: AM Diode detector

The modulated wave of desired frequency is selected by the parallel tuned circuit L1C1 and

is applied to the diode. During positive half cycles of the modulated wave the diode

conducts, while during negative half cycles it doesnot. The result is the output of diode

consists of positive half cycle of modulated wave as shown in figure.

The rectified output consists of r.f. component and the audio signal which cannot be fed to

the speaker for sound reproduction. The r.f. component is filtered by the capacitor ‗C‘

shunted across the speaker. The value of ‗C‘ is large enough to present low reactance to

the r.f. component . fc+fs Therefore signal is passed to the speaker.

AM Radio Receiver

In order to reproduce the AM wave into sound waves, every radio receiver must perform the

following functions.

1. The receiving aerial must intercept a portion of the passing radio waves.

2. The radio receiver must select the desired radio from a number of radio waves

intercepted by the receiving aerial. For this purpose tuned parallel LC circuits must

be used. These circuits will select only that radio frequency which is resonant with

them.

3. The selected radio wave must be amplified by the tuned frequency amplifiers.

4. The audio signal must be recovered from the amplified radio wave.

5. The audio signal must be amplified by suitable number of audio-amplifiers.


SJBIT/ECE Dept

Types of AM radio receivers

1. Straight Radio receiver

2. Superhetrodyne radio receiver

1. Straight Radio Receiver

Receiving antenna

RF amplifier

Fig7.5: Straight Radio Receiver

The Receiving antenna is receiving radio waves from different broadcasting stations. The

desired radio wave is selected by the tuned RF amplifer which employs tuned parallel

circuit. The selected radio wave is amplified by the rf amplifier.

The amplified radio wave is fed to the detector circuit. This circuit extracts the audio

signal from the radio wave. The output of the detector is the audio signal which is

amplified by one or more stages of audio-amplifications. The amplified audio signal is fed

the speaker for sound reproduction.

Limitations-

1. In straight radio receivers, tuned circuits are used. As it is necessary to change the value of

a variable capacitors (gang capacitors) for tuning to the desired station, there is a

considerable variation of Q between the closed and open positions of the variable

capacitors. This changes the sensitivity and selectivity of the radio receivers.

2. There is too much interference of adjacent stations.

Superhetrodyne Receiver

Here the selected radio frequency is converted to a fixed lower value called intermediate

frequency (IF). This is achieved by special electronic circuit called mixer circuit. The production

of fixed intermediate frequency (455 KHz) is an important feature of superhetrodyne circuit. At

this fixed intermediate frequency, the amplifier circuit operates with maximum stability,

selectivity and sensitivity.

The block diagram of superhetrodyne receiver is a shown in fig7.6 below.

Receiving antenna

Detector

AF

amplifier


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C3 L3

c2

RF amplifier Mixer 455KHz

L2

Speaker

Local oscillator

Fig7.6: Superhetrodyne Receiver

1. RF amplifier stage- The RF amplifier stage uses a tuned parallel circuit L1C1 with a

variable capacitor C1. The radio waves from various broadcasting stations are intercepted

by the receiving aerial and are coupled to this stage. This stage selects the desired radio

wave and raises the strength of the wave to the desired level.

2. Mixer stage- The amplified output of RF amplifier is fed to the mixer stage where it is

combined with the output of a local oscillator. The two frequencies beat together and

produce an intermediate frequency (IF).

IF= Oscillator frequency –radio frequency

The IF is always 455 KHz regardless of the frequency to which the receiver is tuned. The

reason why the mixer will always produce 455KHz frequency above the radio frequency is

that oscillator always produces a frequency 455KHz above the selected frequency. In practice,

capacitance of C3 is designed to tune the oscillator to a frequency higher than radio frequency

by 455KHz.

3. IF amplifier stage- The output of mixer is always 455KHz and is fed to fixed tuned IF

amplifiers. These amplifiers are tuned to one frequency (ie 455KHz).

Detector

AF

amplifier

IF

Amplifier


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4. Detector stage- The output from the last IF amplifier stage is coupled to the input of the

detector stage. Here the audio signal is extracted from the IF output. Usually diode

detector circuit is used because of its low distortion and excellent audio fidelity.

5. AF amplifier stage- The audio signal output of detector stage is fed to a multistage audio

amplifier. Here the signal is amplified until it is sufficiently strong to drive the speaker.

The speaker converts the audio signal into sound waves corresponding to the original

sound at the broadcasting station.

Advantages of Superhetrodyne Circuit –

1. High RF amplification

2. Improved selectivity-losses in the tuned circuits are lower at intermediate frequency.

Therefore the quality factor Q of the tuned circuits is increased. This makes amplifier

circuits to operate with maximum selectivity.

3. Lower cost.

CATHODE RAY OSCILLOSCOPE

The cathode ray oscilloscope [CRO] is an electronic device, which is capable of giving a visual

indication of a signal waveform. It is widely used for trouble shooting radio and television

receivers as well as laboratory work involving research and design. In addition the oscilloscope

can also be used for measuring voltage, frequency and phase shift.

Cathode Ray Tube

A cathode ray tube is the heart of the oscilloscope. It is a vacuum tube of special geometrical

shape and converts an electrical signal into visual one. A cathode ray tube makes available plenty

of electrons. These electrons are accelerated to high velocity and are brought to focus on a

fluorescent screen. The electron beam produces a spot of light wherever it strikes. The electron

beam is deflected on its journey in response to the electrical signal under study. The result is that


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electrical signal waveform is displayed

visually.

Fig7.7: Cathode Ray Tube

Electron Gun Assembly- The arrangement of electrodes which produce a focused beam of

electrons is called the electron gun. It essentially consists of an indirectly heated cathode,

control grid, a focusing anode, and an accelerating anode. The control grid is held at negative

potential with respect to cathode whereas the two anodes are maintained at high potential with

respect to cathode.

The cathode consists of a nickel cylinder coated with oxide coating and provides plenty of

electrons. The focusing anode focuses the electron beam into a sharp pin –point by controlling

the positive potential on it. The positive potential ( about 10,000 V) on the accelerating anode

is much higher than on the focusing anode. Therefore this anode accelerates the narrow beam

to a high velocity.

Deflection plate assembly-

1. Vertical deflection plates

2. Horizontal deflection plates

The vertical deflection plates are mounted horizontally in the tube. By applying proper potential

to these plates, the electron beam can be made to move up and down vertically on the fluorescent

screen. An appropriate potential on horizontal plates can cause the electron beam to move right

and left horizontally on the screen.

Screen-The screen is the inside face of the tube and is coated with some fluorescent material

such as Zinc Orthosilicate, Zinc oxide etc. When high velocity electron beam strikes the

screen, a spot of light is produced at the point of impact.


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Action of CRT

O1

+ + + + + +

_ _ _ _ _ _ O

O2

When the cathode is heated, it emits plenty of electrons. The control grid influences the

amount of current flow. As the electron beam leaves the control grid, it comes under the

influence of focusing and accelerating anode. As the two anodes are maintained at high

potential, therefore they produce a field which acts as an electrostatic lens to converge the

electron beam at a point on the screen.

As the electron beam leaves the accelerating anode, it comes under the influence of

vertical and horizontal deflection plates. If no voltage is applied to the deflection plates,

the electron will produce spot of light at the center (point O ) of the screen. If the voltage

is applied to vertical plates only, the electron beam and hence the spot of light will be

deflected upwards (point O1 ). The spot of light will be deflected downwards (O2) of the

portential on the plate is reversed. Similarly the spot of light can be moved horizontally by

applying voltage across the horizontal plates.

Signal Pattern on Screen

CRO Screen

2

1 3 5

t

4

_ +

Sawtooth wave applied across horizontal plate

2

1 3 5

4


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If the signal voltage is applied to the vertical plates and saw tooth wave to the horizontal

plates, we get the exact pattern of the signal as shown in figure.

When the signal is at instant 1, its amplitude is zero. But at this instant, maximum voltage

is applied to the horizontal plates. The result is that the beam is at the extreme left on the

screen as shown. When the signal is at instant 2, its amplitude is maximum. However the –

ve voltage on he horizontal plate is decreased. Therefore the beam is deflected upwards by

the signal and towards the right by the saw tooth wave. The result is that the beam now

strikes the screen at point 2. On similar reasoning, the beam strikes the screen at points

3,4 and 5. Therefore exact signal pattern appears on the screen.

Various controls on CRO

In order to facilitate the proper functioning of CRO, various controls are provided on the front

panel of the CRO.

1. Intensity Control-The knob of intensity control regulates the bias on the control grid and

affects the electron beam intensity.If the negative bias on the grid is increased, the

intensity of electron beam is decreased, thus reducing the brightness of the spot.

2. Focus Contrl- It regulates the positive potential on the focusing anode. If the positive

potential on this anode is increased, the electron beam becomes quite narrow and the spot

on the screen is a pin-point.

3. Vertical position control- The knob of vertical position control regulates the amplitude of

d.c. potential which is applied to the vertical deflection plates in addition to the signal. By

adjusting this control, the image can be moved up or down as required.

Measurement using CRO

The various characteristics of an input signal and the property of the signal such as voltage,

current, frequency, period, phase, amplitude,peak to peak values, duty cycle etc.can be

measured using CRO.

Voltage Measurement

The CROM includes the amplitude measurement facilities such as constant gain amplifiers

and the calibrated shift controls.The waveform can be adjusted on the screen using shift

controls so that the measurement of divisions corresponding to the amplitude become easy.

The follwing steps are used for measurement of amplitude :

1) Apply the wave form to one of the inputs and adjust the controls on the oscilloscope until

a still waveform is obtained on the screen

2) Note down the Volts/Division readings from the front panel.

3) Note down the peak to peak divisions.

4) Use the following relation to obtain the peak to peak value.

Vpp= Number of divisions * (Volts/Division)

Now Vpeak=Vpp/2

And Vrms =Vpeak/1.414

Period and frequency measurement

Display the waveform on the screen such that one complete cycle is visible on the screen.

Note the time/division selected on the front panel.


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Now, time period T =(no. of divisions o0n time base)*time/division

Frequency measurement

From the time period T , the frequency can be obtained as :

Frequency f = 1/T.

Phase measurement

The phase measurement is possible by time measurement by actually measuring the phaseshift

between the two signals

The steps followed are :

1) Display the two signals using dual channels of the oscilloscope

2) Using the ground position of the control switch AC GND DC align the time bases of both

the channels with the horizontal lines

3) Using AC position of the switches display both the signals

4) Now measure the phase difference between the signals interms of no. of divisions say ΘT

5) Measure the time period T of both the signals .

6) Now calculate ΘT as

ΘT =Θ *360/T

=

Applications of CRO

1. Examination of waveforms

2. Voltage measurements

3. Frequency measurementseries

NUMBER SYSTEM

The human need to count things goes back to the dawn of civilization. To answer the questions

like ―how much‖, or ―how many‖, people invented number system. A number system is any

scheme used to count things. The decimal number system succeeded because very large numbers

can be expressed using relatively short series of easily memorized numerals. Decimal or base 10

number system‘s origin: can be traced to, counting on the fingers with digits. ―Digit‖ taken from

the Latin word digitus meaning ―finger‖

In any number system, the important terms to be known are :

Base or radix, numerals, positional value, absolute value, radix point and the prevalent number

systems of interest for study.

Base: Base is the number of different digits or symbols or numerals used to represent the number

system including zero in the number system. It is also called the radix of the number system.

Numeral : Numeral is the symbols used to represent the number system

Each digit in the number system has two values:

a) Absolute value

b) Positional value

The absolute value is the value of the digit itself, representing the no. system. The positional

value is the value it possesses by virtue of its position in the no. system


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The different number systems of interest for study, from the point of view of application to

computers are:

Examples of commonly used number systems :

decimal

binary

octal

hexadecimal.

Important properties of these systems need to be studied.

Polynomial Notation (Series Representation) :Any number system can be represented by the

following polynomial.

N = an-1 x rn-1 + an-2 x rn-2 + .. + a0 x r0 + a-1 x r-1 ... + a-m x r–m Where

r = radix or base

n = number of integer digits to the left of the radix point

m = number of fractional digits to the right of the radix point

an-1 = most significant digit (MSD)

a-m = least significant digit (LSD)

Example:

N = (251.41)10 = 2 x 102 + 5 x 101 + 1 x 100 + 4 x 10-1 + 1 x 10-2

Decimal number system :

The decimal system is composed of 10 numerals or symbols. These 10 symbols are 0, 1, 2, 3, 4, 5,

6, 7, 8, 9. Using these symbols as digits of a number, we can express any quantity. The decimal

system is also called the base-10 system because it has 10 digits.

In decimal system, the no. 1000.111 is represented as:

Integer part Fractional part

103 10

2 10

1 10

0 10

-1 10

-2 10

-3

=1000 =100 =10 =1 . =0.1 =0.01 =0.001

Most Significant Digit Decimal point

Least

Significant

Digit

Example : Multiply the value of the symbol by the value of the position, then add

In decimal, 1954.89means

1 times 1,000

plus 9 times 100

plus 5 times 10

plus 4 times 1

plus 8 times 1/10

plus 9 times 1/100 = The number is 1954.89 in decimal. and is represented by (1954.89)10. The

digits are separated by a point “.” called the radix point. In decimal system it is called ―decimal

point‖.

Decimal Examples of decimal numbers


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1410

5210

102410

6400010

Binary number system :

In the binary system, there are only two symbols or possible digit values, 0 and 1. This base-2

system can be used to represent any quantity that can be represented in decimal or other base

system.

Integer part Fractional part

23 2

2 2

1 2

0 2

-1 2

-2 2

-3

=8 =4 =2 =1 . =0.5 =0.25 =0.125

Most Significant Digit Binary point

Least

Significant

Digit

Binary Counting

The Binary counting sequence to represent decimal numbers is shown in the table below :

23 2

2 2

1 2

0 Decimal

0 0 0 0 0

0 0 0 1 1

0 0 1 0 2

0 0 1 1 3

0 1 0 0 4

0 1 0 1 5

0 1 1 0 6

0 1 1 1 7

1 0 0 0 8

1 0 0 1 9

1 0 1 0 10

1 0 1 1 11

1 1 0 0 12

1 1 0 1 13

1 1 1 0 14

1 1 1 1 15

Representing Binary Quantities

In digital systems the information that is being processed is usually presented in binary form. Any

device that has only two operating states or possible conditions can represent binary quantities.

E.g.. a switch which can be either be only open or closed. We arbitrarily (as we define them) let


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an open switch represent binary 1 and a closed switch represent binary 0. Thus we can represent

any binary number by using series of switches.

Typical Voltage Assignment

Binary 1: Any voltage between 2V to 5V

Binary 0: Any voltage between 0V to 0.8V

Not used: Voltage between 0.8V to 2V in 5 Volt CMOS and TTL Logic is not used as it may

cause error in a digital circuit.

We can see another significant difference between digital and analog systems. In digital systems,

the exact voltage value is not important; eg, a voltage of 3.6V means the same as a voltage of

4.3V. In analog systems, the exact voltage value is important

Binary addition and subtraction: Examples of addition and subtraction in this number system is

shown below:

The addition of binary numbers is done as follows:

a) 1 + 1 = 0 with a carry of 1, and can be represented as (10)2 , with 0 taking LSD position

and 1 taking MSD.

b) 1 + 0 = 1

c) 0 + 1 = 1

d) 0 + 0 = 0

Example: Add the binary numbers 101011 and 11001

Sol: The binary addition process is indicated below,

Addition

111011 Carries the carries generated during addition is indicated here.

101011 Augend

+ 11001 Addend

1000100

The answer is : (101011) 2 + (11001) 2 = ( 1000100) 2

The subtraction of binary numbers is done as follows:

e) 1 - 1 = 0

f) 1 - 0 = 1

g) 0 - 1 = 0 with a barrow of 1 from previous stage


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h) 0 - 0 = 0

Example: Subtract the binary numbers 11011 from100101.

Sol: The binary subtraction process is indicated below,

Subtraction

0 1 10 0 10 Borrows the barrows taken during subtraction is indicated here.

1 0 0 1 0 1 Minuend

1 1 0 1 1 Subtrahend

0 1 0 1 0

The answer is : (100101) 2 - (11011) 2 = ( 01010) 2

Octal Number System

The octal number system has a base of eight, meaning that it has eight possible digits:

0,1,2,3,4,5,6,7.

83 8

2 8

1 8

0 8

-1 8

-2 8

-3

=512 =64 =8 =1 . =1/8 =1/64 =1/512

The octal numbering system includes eight base digits (0-7).After 7, the next placeholder to

the right begins with a “1”

0, 1, 2, 3, 4, 5, 6, 7, 10, 11, 12, 13 ...

Octal to Decimal Conversion

2378 = 2 x (82) + 3 x (8

1) + 7 x (8

0) = 15910

24.68 = 2 x (81) + 4 x (8

0) + 6 x (8

-1) = 20.7510

11.18 = 1 x (81) + 1 x (8

0) + 1 x (8

-1) = 9.12510

12.38 = 1 x (81) + 2 x (8

0) + 3 x (8

-1) = 10.37510

Octal addition and subtraction:

Examples of addition and subtraction in this number system is shown below:

Example: Add the octal numbers 5471 and 3754

Sol : The addition process with procedure is shown below :

Addition

1 1 1 Carries the carries generated during addition is indicated here.

5 4 7 1 Augend

+ 3 7 5 4 Addend

1 1 4 4 5 Sum


SJBIT/ECE Dept

Procedure :

Addition of first column 1+4= 5

Addition of second column 7+5= 12 and 12-8 = 4, with a carry of 1 to left

Addition of third column 1+4+7= 12 and 12-8 = 4, with a carry of 1 to left

Addition of fourth column 1+5+3= 9 and 9-8 = 1, with a carry of 1 to left

The final carry forms the MSD.

The answer is : (5471) 8 + (3754) 8 = ( 11445) 8

Subtraction

Example: Subtract the octal numbers 7451 and 5643

Sol : The subtraction process with procedure is shown below :

6 10 4 10 Borrows the barrows taken during subtraction is indicated here.

7 4 5 1 Minuend

- 5 6 4 3 Subtrahend

1 6 0 6 Difference

Procedure :

Subtraction of first column 1-3= 6,by borrowing carry from previous stage

1+8= 9, hence 9-3=6

Subtraction of second column 4-4= 0,now after the barrow 5 becomes 4 in II column.

Subtraction of third column 4-6= 6, by borrowing from previous stage, 8+4=12,

Hence 12-6 = 6

Subtraction of fourth column 6-5= 1, 7 will become 6 after a barrow to the right.

The answer is : (7451) 8 - (5643) 8 = ( 1606) 8

Hexadecimal number system

The hexadecimal system uses base 16. Thus, it has 16 possible digit symbols. It uses the digits 0

through 9 plus the letters A, B, C, D, E, and F ,to represent 10 through 16, as the 16 digit symbols

Digits = 0, 1, 2, 3, 4, 5, 6, 7, 8, 9, A, B, C, D, E, F

(B65F)16 = 11 x 163 + 6 x 162 + 5 x 161 + 15 x 160 = (46,687)10

Sometimes, it is necessary to use a numbering system that has more than ten base

digits

One such numbering system is hexadecimal number system, useful in computer

application.

Hexadecimal number, is widely used in micro processors and micro controllers

in assembly programming, and in embedded system development.


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Hexadecimal addition and subtraction: Examples of addition and subtraction in this number

system is shown below:

Addition

1 0 1 1 Carries

5 B A 9 Augend

+ D 0 5 8 Addend

1 2 C 0 1 Sum

Subtraction

9 10 A 10 Borrows

A 5 B 9 Minuend

+ 5 8 0 D Subtrahend

1 D A C Difference

Conversion of number systems.

Converting from one no. system to another is called conversion of no. system or code conversion,

like converting from binary to decimal or converting from hexadecimal to decimal etc.The

possibilities of conversions of above number system is shown below.

Conversion Among Bases

The possibilities:

Hexadec

imal

Decimal Octal

Binary


SJBIT/ECE Dept

The binary number system is the most important one in digital systems, but several others are also

important. The decimal system is important because it is universally used to represent quantities

outside a digital system. This means that there will be situations where decimal values have to be

converted to binary values before they are entered into the digital system.

The above diagram shows all the possibilities of conversions discussed below. However the

possibilities of conversions can be summarized in to the following three categories :

Case 1: Conversion from decimal to other number system.

Case 2: Conversion from other number system to decimal number system.

Case 3: Conversion from among number systems other than decimal number system.

Binary-To-Decimal Conversion

The binary number system is the most important one in digital systems, but several others are also

important. The decimal system is important because it is universally used to represent quantities

outside a digital system. This means that there will be situations where decimal values have to be

converted to binary values before they are entered into the digital system.

Any binary number can be converted to its decimal equivalent simply by summing together the

weights of the various positions in the binary number which contain a

together the weights of the various positions in the binary number which contain a 1.

Technique

Multiply each bit by 2n, where n is the “weight” of the bit

The weight is the position of the bit, starting from 0 on the right

Add the results

Example:

Binary Decimal

101101012

27+0

6+2

5+2

4+0

3+2

2+0

1+2

0 =128+0+32+16+0+4+0+1

Result 18110

You should have noticed that the method is to find the weights (i.e., powers of 2) for each bit

position that contains a 1, and then to add them up.

Binary to decimal Fractions:

Example :

10.1011 => 1 x 2-4 = 0.0625

1 x 2-3 = 0.125

0 x 2-2 = 0.0

1 x 2-1 = 0.5

0 x 20 = 0.0


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1 x 21 = 2.0

=2.6875

Procedure: Same principles with following exception ;.

Use negative powers of the base to the right of the radix point. (Only call it a decimal point in the

decimal number system.)

Decimal-To-Binary Conversion

There are 2 methods:

Reverse of Binary-To-Decimal Method

Repeat Division

Reverse of Binary-To-Decimal Method

Example :

Decimal Binary

4510 =32 + 0 + 8 + 4 +0 + 1

=25+0+2

3+2

2+0+2

0

Result =1011012

Repeat Division-Convert decimal to binary

This method uses repeated division by 2.

Example :

Conversion of 2710 to binary

Division Remainder Binary

25/2 = 12+ remainder of 1 1 (Least Significant Bit)

12/2 = 6 + remainder of 0 0



1/2 = 0 + remainder of 1 1 (Most Significant Bit)

Result 2510 = 110012

Procedure :

Divide by two, keep track of the remainder

Group the remainders in the following order

First remainder is bit LSB (least-significant bit)

Last remainder is bit MSB (Most-significant bit)


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Binary-To-Octal / Octal-To-Binary Conversion

Octal Digit 0 1 2 3 4 5 6 7

Binary

Equivalent 000 001 010 011 100 101 110 111

Each Octal digit is represented by three binary digits.

Example: 100 111 0102 = (100) (111) (010)2 = 4 7 28

Octal to decimal

Procedure



Add the results.

Example:

724.258 => 4 x 80 = 4

2 x 81 = 16

7 x 82 = 448

2 x 1/8 = 0.25

5 x 1/82 = 0.015625

Ans: 7248 =468.26562510

Decimal to octal

Repeat Division-Convert decimal to octal : This method uses repeated division by 8.

Example: Convert 17710 to octal and binary

Division Result Binary

177/8 = 22+ remainder of 1 1 (Least Significant Bit)

22/ 8 = 2 + remainder of 6 6

2 / 8 = 0 + remainder of 2 2 (Most Significant Bit)

Result 17710 = 2618

Binary = 0101100012

Hexadecimal to Decimal/Decimal to Hexadecimal Conversion

Example: 2AF16 = 2 x (162) + 10 x (16

1) + 15 x (16

0) = 68710


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Hexadecimal to Decimal Conversion

Technique



Add the results

Example:

ABC.6D16 => C x 160 = 12 x 1 = 12

B x 161 = 11 x 16 = 176

A x 162 = 10 x 256 = 2560

6 x 1/16 = 6 x .0625

D x 1/162 = 13 x .0039

= 2748.066410

Ans: ABC16 = 2748.066410

24.616 = 2 x (161) + 4 x (16

0) + 6 x (16

-1) = 36.37510

11.116 = 1 x (161) + 1 x (16

0) + 1 x (16

-1) = 17.062510

12.316 = 1 x (161) + 2 x (16

0) + 3 x (16

-1) = 18.187510

Decimal To Hexadecimal

Repeat Division- Convert decimal to hexadecimal - This method uses repeated division by 16.

Example: convert 37810 to hexadecimal and binary:

Division Result Hexadecimal

378/16 = 23+ remainder of 10 A (Least Significant Bit)23

23/16 = 1 + remainder of 7 7

1/16 = 0 + remainder of 1 1 (Most Significant Bit)

Result 37810 = 17A16

Binary = 0001 0111 10102

Binary-To-Hexadecimal /Hexadecimal-To-Binary Conversion

Hexadecimal Digit 0 1 2 3 4 5 6 7

Binary Equivalent 0000 0001 0010 0011 0100 0101 0110 0111

Hexadecimal Digit 8 9 A B C D E F

Binary Equivalent 1000 1001 1010 1011 1100 1101 1110 1111

Each Hexadecimal digit is represented by four bits of binary digit


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Example: 1011 0010 11112 = (1011) (0010) (1111)2 = B 2 F16

Octal-To-Hexadecimal, Hexadecimal-To-Octal Conversion

Convert Octal (Hexadecimal) to Binary first.

Regroup the binary number by three bits per group starting from LSB if Octal is required.

Regroup the binary number by four bits per group starting from LSB if Hexadecimal is

required

Example:

Convert 5A816 to Octal.

Hexadecimal Binary/Octal

5A816 = 0101 1010 1000 (Binary)

= 010 110 101 000 (Binary)

Result = 2 6 5 0 (Octal)

Complement method of subtraction

The complement method of subtraction is the method used for subtraction of numbers in different

number systems. This method is useful as it can easily implemented in arithmetic logic circuits

and inverting circuits in computers.

The complement method used in various no. systems discussed above is indicated below:

For decimal system – 9‘s complement method

– 10‘s complement method

For binary system – 1‘s complement method

-- 2‘s complement method

For octal system – 7‘s complement method


For hexadecimal system – 15‘s complement method


For subtraction of two numbers we have two cases :

1 Subtraction of smaller number from larger number

2 Subtraction of larger number from smaller number

9’s or 10’s complement subtraction :

Subtraction of smaller no. from larger no.

when 9‘s or 10‘s complement of smaller number is added to the larger no., carry is generated. It

is necessary to add this carry to the result. This is called an end around carry..


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Ex :

Regular subtraction subtraction in 9‘s subtraction in 10‘s

8 8 8

-2 7 9’s complement of 2 8 10’s complement of 2

--------- ---------- --------

6 1 5 16 –discard the carry

-----1end around carry

------ --------

6 6 Ans

----------------------------------------------------------------------

Ex : 2


9 9 9


--------- ---------- --------

4 1 3 1 4 –discard the carry

--------1 end around carry

------ --------

4 4 Ans

-----------------------------------------------------------------------------------

Subtraction larger no. from smaller no.

When larger no. is subtracted from smaller no.there is no carry, and hence the result is negative

and is in 9‘s complement form, if it is 9‘s complement method of subtraction and is in 10‘s

complement form, if it is 10‘s complement method.

After taking the corresponding complement attach a negative sign to the result to get the answer.

Ex : 1


2 2 2


--------- ---------- --------

-6 3 no carry, hence 4 – no carry, hence take

take 9’s complement of the 10’s complement of the

answer and attach –ve sign answer and attach –ve

i.e 9-3=6, the answer is -6 sign i.e 10-4=6,the ans

wer is –6.

----------------------------------------------------------------------

Ex : 2


4 4 4


--------- ---------- --------

- 5 4 no carry, hence 5 no carry, hence take


SJBIT/ECE Dept



i.e 9-4=, the answer is -5 sign i.e 10-5=5,the ans

wer is –5.

-----------------------------------------------------------------------------------------------------------

Binary no. system

The 1‘s complement of a given binary no. is the new no. obtained by changing all the 0‘ to 1, and

all 0‘s to 1

Ex : 11010‘s 1‘s complement is 00101

The 2‘s complement of a given binary no. is the new no. obtained by changing all the 0‘ to 1, and

all 0‘s to 1 and then adding 1 to the least significant it

Ex : 11010‘s 2‘s complement is 1‘s complement 00101+1=00110

Subtraction of smaller number from larger number

Methd:

1. Determine the 1‘s complement of the smaller no.

2. Add the first complement to the larger no.

3. Remove the carry and add it to the result.

This is called end-around carry.

Ex : Subtract 1010112 from 1110012 using the 1‘s complement method

Solution :

111001

-101011 - Take 1‘s complement of101011 = 010100

-------------

111001

+ 010100

-----------------

Carry 1) 001101

------- --+1 - end around carry

-------------------

1110 Final answer

Subtraction of larger number from smaller number

Method :

1. Determine the first complement of the larger no.

2. Add the first complement to the smaller no.

3. Answer is in the 1‘s complement form.To get the answer in true form take the 1‘s

complement and assign –ve sign to the answer.

Advantages of 1’s complement method

1. The first complement subtraction can be accomplished with a binary adder. There fore,

this method is useful in arithmetic logic circuits.

2. The first complement of a no. is easily obtained by inverting each bit in the no.


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2’s complement method of subtraction

Subtraction of smaller number from larger number

Method:

1. Determine the 2‘s complement of a smaller no.

2 Add the 2‘s complement to the larger no.

3 Discard the carry.

Subtract 1010112 from 1110012 using the 1‘s complement method

Solution :

111001

-101011 - Take 2‘s complement of101011 = 1‘s complement+1=010100+1

------------- =010101

111001

+ 010101

-----------------

Carry 1) 001110-------discard the carry

-------------------

1110 Final answer


Method:

1. Determine the 2‘s complement of a larger no.

2 Add the 2‘s complement to the smaller no.

3 When there is no carry, answer is in the 2‘s complement form.To get the answer in the true

form take the 2‘s complement and assign –ve sign to the answer.

Ex :

Subtract 1110012 from1010112 using the 1‘s complement method

Solution :

101011

-111001 - Take 2‘s complement of111001 = 1‘s complement+1=000110+1

------------- =000111

101011

+ 000111

-----------------

110010-------no carry generated,hence take 2‘s complement of the result

------------------- and attach –ve sign to it.i.e 001101+1=001110

001110

Therefore the answer is -0011

Complement method of subtraction for octal number


The 7‘s complement of an octal no. is found by subtracting each digit from 7

Ex : Find 7‘s complement of 6128


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Solution : 7 7 7

-6 1 2

-----------

1 6 58


The procedure for subtraction using this method is given below.

Method :

Step1 :Find 7‘s complement of subtrahend

Step2: Add two octal numbers (first no. and 7‘s complement of the second no.)

Step3 : I f the carry is produced in addition, add the carry to the least significant bit of the sum,

otherwise find 7‘s complement of the sum and attach –ve sign to it.

This can be carried out with the following example :

Ex: Use 7‘s complement method of subtraction to compute 1768 - 1578

Step1: 7 7 7

-1 5 7

-------------------

6 2 0 7‘s complement of 1578

Step2 :

1 1 ------- carry

1 7 6

+6 2 0

---------------------

Step3 1 0 1 6

------1-- ---- end around carry

---------------------

0 1 7

The answer is 1768 - 1578= 0178


The procedure for subtraction, using this method is given below.

Method :

Step1 :Find 7‘s complement of subtrahend

Step2: Add two octal numbers (first no. and 7‘s complement of the second no.)

Step3 : I f the carry is not produced in addition then, find 7‘s complement of the sum as a result

and attach –ve sign to the result.

This can be carried out with the following example :


Solution :

Step1: 7 7 7

-1 7 6

-------------------

6 0 1


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Step2 :

1 5 7

+6 0 1

---------------------

Step3 7 6 0 No carry,hence take 7‘s complement of 760 and attach –ve sign to it.

7 7 7

7 6 0

---------------------

0 1 7

The answer is 1578 - 1768= -0178


The 8‘s complement of an octal number is found by adding a 1 to the least significant bit of the

7‘s complement of an octal no.

Ex : Find 8‘s complement of 346

7 7 7

3 4 6

-------------------

4 3 1 -------- 431+1=438,hence, 4318 is the 8’s complement of 3468


The steps for octal subtraction using 8‘s complement method are as given below

Step 1. Find 8‘s complement of subtrahend

Step 2 : Add two octal numbers (first no. and 8‘s complement of second no.)

Step 3 : If carry is produced in the addition, it is discarded., otherwise find 8‘s complement of the

sum as the result with –ve sign.

Ex : Use 7‘s complement method of subtraction to compute 5168 - 4138

Solution :

Step1: 7 7 7

-4 1 3

-------------------

3 6 4 add 1 to it, i.e 364+1=365 is the 8‘s complement of 413

Step2 :

1 1 ------- carry

5 1 6

+3 6 5

---------------------

Step3 1 1 0 3 ignore the carry


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The answer is 5168 - 4138=1038


Ex : Use 7‘s complement method of subtraction to compute 4138 - 5168

Solution :

Step1: 7 7 7

-5 1 6

-------------------

2 6 1 add 1 to it, i.e 261+1=262 is the 8‘s complement of 516

Step2 :

413

+262

---------------------

Step3 675 no carry, hence take 8‘s complement of the result 675,i.e 777-675=

102,102+1=103

The answer is 5168 - 4138= -1038

Complement method of subtraction for Hexadecimal number


The 15‘s complement of a hexadecimal no. is found by subtracting each digit from 15.

Ex: Find 15‘s complement of A9Bh (’h’ is used to denote hexadecimal numbers).

Solution : 15 15 15

A 9 B

----------------

5 6 4 h

Steps for Hexadecimal subtraction using 15‘s complement are as given below :


Step 1 : Find 15‘s complement of subtrahend

Step 2 : Add two hexadecimal numbers (first no. and 15‘s complement of second no.)

Step 3 : If carry is produced in the addition, add carry to the least significant bit of the sum,

otherwise find 15‘s complement of the sum as a result with a –ve sign.

Ex: Use 15‘s complement method of subtraction to compute B0216 - 98F16

Solution :

Step1: 15 15 15

- 9 8 F

-------------------

6 7 0 -15‘s complement of 98F


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Step2 :

B02

+670

---------------------

Step3 1 172

-------1-- ---- end around carry,add it to LSB

------------------------

173

The answer is B0216 - 98F16=17316

Subtraction of larger no. from smaller no.

Method :



Step 3 : If carry is produced in the addition, add carry to the least significant bit of the sum,

otherwise find 15‘s complement of the sum and attach –ve sign to it.

Ex : Use 15‘s complement method of subtraction to compute 69B16 - C1416

Solution :

Step1: 15 15 15

- C 1 4

------------------------

3 E B

Step2 1 1 ---carry :

6 9 B

+3 E B

---------------------

Step3 A 8 6 no carry, hence take 15‘s complement of the result A86,i.e 15 15 15- 3EB

= A8616

The answer is 69B16 - C1416= -A8616


The 16‘s complement of a hexadecimal no. is found by adding a 1 to the least significant bit of the

15‘s complement of a hexadecimal no.

Ex: find 16‘s complement of A8Ch

Solution : 15 15 15

- A 8 C

---------------

5 7 3 15‘s complement

1 add 1

-----------------

5 7 4 -------------16‘complement of A86





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Step 3 : If carry is produced in the addition, it is discarded, otherwise find 16‘s complement of the

sum as a result, with a –ve sign.

Ex: Use 16‘s complement method of subtraction to compute B0216 - 98F16

Solution :

Step1: 15 15 15

- 9 8 F

-------------------

6 7 0 -15‘s complement of 98F,add 1 to LSB to get 16‘s complement

Step2 : i.e 670+1=671

B02

+671

---------------------

Step3 1 173 discard the carry

The answer is B0216 - 98F16= 17316

Subtraction of larger no. from smaller no.




Step 3 : If carry is produced in the addition, it is discarded, otherwise find 16‘s complement of the

sum as a result, with a –ve sign.


Solution :

Step1: 15 15 15

8 5 4 -Take15‘s complement of 854,add 1 to LSB to get 16‘s Step2 :

--------------- complement i.e 7AB+1=7AC

Step2

3 8 7

+7 A C

---------------------

Step3 1 B 6 3 no carry, hence take 16‘s complement of B63 and add –ve sign to

it.i.e15 15 15-B63=49C +1=49D

The answer is 16 38716 - 85416=-49D16

Binary Coded Decimal Numbers - BCD

BCD is an abbreviation for binary coded decimal. Bcd is a numeric code in which each digit of a

decimal number is represented by a separate group of bits. The most common BCD code is 8-4-2-

1 BCD, in which each decimal digit is represented by a 4 bit binary number. It is called 8-4-2-1

BCD because the weights associated from right to left are 1-2-4-8.

The table below shows decimal digit and its corresponding code.


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Decimal Number BCD

Number(8421)

0000

1 0001

2 0010

3 0011

4 0100

5 0101

6 0110

7 0111

8 1000

9 1001

In multidigit coding, each decimal digit is individually coded with 8-4-2-1 BCD code

Ex : 58 = 0101 1000

5 8

The advantage of BCD is that it is easy to convert between it and decimal. The disadvantage is the

arithmetic operations are more complex when compared to binary.

BCD ADDITION

The addition of two BCD nos. can be best understood by considering the following three

conditions :

Case1: The sum equals 9 or less with no carry

Case2: The sum equals greater than 9 with no carry

Case3: The sum equals 9 or less with a carry

--------------------------------------

Case1: The sum equals 9 or less with no carry

Take two numbers 6 and 3 in BCD and add

6 ----- 0110

3 ----- 0011

---------------------

9 ----- 1001

The addition is carried out as in normal binary addition and the sum is 1001 which is a BCD code

for 9.

Case2: The sum equals greater than 9 with no carry

Let us consider addition of the numbers 6 and 8 in BCD

6 ----- 0110

8 ----- 1000


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---------------------

14----- 1110 invalid BCD number. This has occurred because the sum of the

two digits exceeds 9. In this case to correct the situation add 6 in BCD i.e 0110 to

the invalid BCD no. as shown below.

6 ----- 0110

8 ----- 1000

---------------------

14----- 1110

0110

-----------------

0001 0100

Observe that after addition of 6 a carry is produced into the second decimal position.

Case3: The sum equals 9 or less with a carry

Let us consider addition of the numbers 8 and 9 in BCD

8 ----- 1000

9 ------1001

---------------------

17 0001 0001 In correct BCD No.

0110 Add 6 for correction

---------------------------

0001 0111 BCD for 17

Going through the above cases we can write the following BCD addition procedure :

BCD Subtraction

A negative BCD no. can be expressed by taking 9‘s complement or 10‘s complement.

The9‘s complement of a decimal number is found by subtracting each digit in the number by

9.The 10‘s complement is 9‘s complement +1

Decimal Number 9’s complement 10’s

complement

0 9 0

1 8 9

2 7 8

3 6 7

4 5 6

5 4 5

6 3 4

7 2 3

8 1 2


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9 0 1

In 9‘s or 10‘s complement subtraction :


when 9‘s or 10‘s complement of smaller number is added to the larger no., carry is generated. It

is necessary to add this carry to the result. This is called an end around carry..

Ex : 1


8 8 8


--------- ---------- --------

6 1 5 16 –discard the carry

-----1end around carry

------ --------

6 6 Ans

----------------------------------------------------------------------

Ex : 2


9 9 9


--------- ---------- --------

4 1 3 1) 4 –discard the carry

--------1 end around carry

------ --------

4 4 Ans

-----------------------------------------------------------------------------------

Subtraction larger no. from smaller no.

When larger no. is subtracted from smaller no.there is no carry, and hence the result is

negative and is in 9‘s complement form, if it is 9‘s complement method of subtraction and is in

10‘s complement form, if it is 10‘s complement method.

After taking the corresponding complement attach a negative sign to the result to get the answer.

Ex : 1


2 2 2


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-8 9’s complement of 8 2 10’s complement of 2

--------- ---------- --------

-6 3 no carry, hence 4 – no carry, hence take



i.e 9-3=6, the answer is -6 sign i.e 10-4=6,the ans

wer is –6.

----------------------------------------------------------------------

Ex : 2


4 4 4


--------- ---------- --------

- 5 4 no carry, hence 5 no carry, hence take



i.e 9-4=, the answer is -5 sign i.e 10-5=5,the ans

wer is –5.

From the above examples we can summarize steps for 9‘s and 10‘s complement of BCD

subtraction as follows :

Find the 9‘s or 10‘s complement of a negative no.

Add the two numbers using BCD addition

If carry is generated add carry to the result treating it as ‗end around carry‘, if it is 9‘s complement

subtraction, discard the carry if it is 10‘s complement. If there is no carry generated take

corresponding 9‘s or 10‘s complement of the result and attach –ve sign to the result.

Ex: Perform each of the following decimal subtraction in BCD using 9‘s complement and 10‘s

complement.

a) 79 b) 29

26 38

Part –I Using 9’s complement form

Solution : Using 9‘s complement form

a) 79 --- 79 0111 1001

-26 -- 73 0111 0011---9‘s complement of in BCD

53

The 9‘s complement of 26 is73 (0111 0011) ,converting toBCD format

0111 0011

0110 The no.is>9, hence add 0110

---------------------


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1101 0011 adding this to 0111 1001 we get

0111 1001

1101 0011

------------------------

1 0100 1100

---------------- 1 end around carry

----------------------------------

0100 +1101 The no.is>9, hence add 0110

0110

------------------------------------------

101 0011 --which is BCDequivalent of

the answer 53

b) 29 29

-38 -38 take 9‘s complement 38 =61

-09

29-------- 0010 1001

+61-------- 0110 0001

---------------------------------------------------------------------------------

1000 1010

0110 since 1010 is > 9, therefore 6 is added.

----------------------------------------------------------------------------------

1001 0000 ------after addition there is no carry generated, hence

take 9‘s complement of the result

-----------------------------------

0000 1001 ------- 9‘s complement of the result 1001 0000

The answer is –0000 1001 in BCD or –09 in decimal.

Part –II Using 10’s complement form

Solution : Using 10‘s complement form

a) 79 --- 0111 1001

-26 -- 0111 0100------- 10‘s complement of 26 is 74 (i.e 99-26=73+1=74)

53 1110 1101

0110 0110 the result exceeds 9, hence add 6 to the result

1 0101 0011 discard the carry

Hence the answer is 0101 0011 in BCD or 53 in decimal

b) 29 29

-38 -38 take 10‘s complement 38 ( 99-38=61+1=62)

-09


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29-------- 0010 1001

+62-------- 0110 0010

---------------------------------------------------------------------------------

1000 1011

0110 since 1010 is > 9, therefore 6 is added.

----------------------------------------------------------------------------------

1001 0001 ------after addition there is no carry generated, hence

take 10‘s complement of the result

-----------------------------------

0000 1001 ------- 10‘s complement of the result

The answer is –0000 1001 in BCD or –09 in decimal.

---------------------------------------- 0 --------------------------------------------------------------


SJBIT/ECE Dept

UNIT 8

BOOLEAN ALGEBRA

Symbolic Logic

Boolean algebra derives its name from the mathematician George Boole. Symbolic Logic uses

values, variables and operations

True is represented by the value 1.

False is represented by the value 0.:

Variables are represented by letters and can have one of two values, either 0 or 1. Operations are

functions of one or more variables

AND is represented by X.Y

OR is represented by X + Y

NOT is represented by X' . Throughout this tutorial the X' form will be used and

sometime !X will be used.

These basic operations can be combined to give expressions

Example : X

X.Y

W.X.Y + Z

Precedence

As with any other branch of mathematics, these operators have an order of precedence. NOT

operations have the highest precedence, followed by AND operations, followed by OR operations.

Brackets can be used as with other forms of algebra. e.g.

X.Y + Z and X.(Y + Z) are not the same function

Function Definitions

The logic operations given previously are defined as follows :

Define f(X,Y) to be some function of the variables X and Y.

f(X,Y) = X.Y

f(X,Y) = X.Y

1 if X = 1 and Y = 1

0 Otherwise


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f(X,Y) = X + Y

1 if X = 1 or Y = 1

0 Otherwise

f(X) = X'

1 if X = 0

0 Otherwise

Truth Tables

Truth tables are a means of representing the results of a logic function using a table. They are

constructed by defining all possible combinations of the inputs to a function, and then calculating

the output for each combination in turn. For the three functions we have just defined, the truth

tables are as follows

AND

X Y F(X,Y)

0 0 0

0 1 0

1 0 0

1 1 1

OR

X Y F(X,Y)

0 0 0

0 1 1

1 0 1

1 1 1

NOT

X F(X)

0 1

1 0

Truth tables may contain as many input variables as desired


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F(X,Y,Z) = X.Y + Z

X Y Z F(X,Y,Z)

0 0 0 0

0 0 1 1

0 1 0 0

0 1 1 1

1 0 0 0

1 0 1 1

1 1 0 1

1 1 1 1

Boolean Switching Algebras

A Boolean Switching Algebra is one which deals only with two-valued variables. Boole's general

theory covers algebras which deal with variables which can hold n values.

Identity :- X + 0 = X, X . 1 = X

Commutative Laws : X + Y = Y + X, X . Y = Y . X

Distributive Laws : X.(Y + Z ) = X.Y + X.Z, X + Y.Z = (X + Y) . (X + Z)

Complement : X + X' = 1, X . X' = 0, The complement X' is unique.

Theorems: A number of theorems may be proved for switching algebras

Idempotent Law : X + X = X, X . X = X

DeMorgan's Law:

(X + Y)' = X' . Y', These can be proved by the use of truth tables.

Proof of (X + Y)' = X' . Y'

X Y X+Y (X+Y)'

0 0 0 1

0 1 1 0

1 0 1 0

1 1 1 0

X Y X' Y' X'.Y'

0 0 1 1 1


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0 1 1 0 0

1 0 0 1 0

1 1 0 0 0

The two truth tables are identical, and so the two expressions are identical

(X.Y) = X' + Y', These can be proved by the use of truth tables

Proof of (X.Y) = X' + Y'

X Y X.Y (X.Y)'

0 0 0 1

0 1 0 1

1 0 0 1

X Y X' Y' X'+Y'

0 0 1 1 1

0 1 1 0 1

1 0 0 1 1

1 1 0 0 0

Note : DeMorgans Laws are applicable for any number of variables

Boundedness Law: X + 1 = 1: X . 0 = 0

Absorption Law : X + (X . Y) = X: X . (X + Y ) = X

Elimination Law : X + (X' . Y) = X + Y, X.(X' + Y) = X.Y

Involution theorem : X'' = X

Associative Properties : X + (Y + Z) = (X + Y) + Z, X . ( Y . Z ) = ( X . Y ) . Z

Duality Principle : In Boolean algebras the duality Principle can be obtained by interchanging

AND and OR operators and replacing 0's by 1's and 1's by 0's. Compare the identities on the left

side with the identities on the right.

Example : X.Y+Z' = (X'+Y').Z

It states that for every Boolean expression there exists another expression such that the anding is

replaced by oring,and oring is replaced by anding, and all 0‘s are replaced by 1‘s and all 1‘s are

replaced by 0‘s in the original expression.

Consensus theorem : X.Y + X'.Z + Y.Z = X.Y + X'.Z


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or dual form as below, (X + Y).(X' + Z).(Y + Z) = (X + Y).(X' + Z)

Proof of X.Y + X'.Z + Y.Z = X.Y + X'.Z:

X.Y + X'.Z + Y.Z = X.Y + X'.Z

X.Y + X'.Z + (X+X').Y.Z = X.Y + X'.Z

X.Y.(1+Z) + X'.Z.(1+Y) = X.Y + X'.Z

X.Y + X'.Z = X.Y + X'.Z

X.Y'+Z).(X+Y).Z = X.Z+Y.Z instead of X.Z+Y'.Z

X.Y'Z+X.Z+Y.Z

(X.Y'+X+Y).Z

(X+Y).Z

X.Z+Y.Z

The term which is left out is called the consensus term

Given a pair of terms for which a variable appears in one term, and its complement in the other,

then the consensus term is formed by ANDing the original terms together, leaving out the selected

variable and its complement.

The consensus of X.Y and X'.Z is Y.Z

The consensus of X.Y.Z and Y'.Z'.W' is (X.Z).(Z.W')

Summary of Laws And Theorms

Identity Dual

Operations with 0 and 1

X + 0 = X (identity) X.1 = X

X + 1 = 1 (null element) X.0 = 0

Idempotency theorem

X + X = X X.X = X

Complementarity

X + X' = 1 X.X' = 0

Involution theorem

(X')' = X

Cummutative law


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X + Y = Y + X X.Y = Y X

Associative law

(X + Y) + Z = X + (Y + Z) = X + Y + Z (XY)Z = X(YZ) = XYZ

Distributive law

X(Y + Z) = XY + XZ X + (YZ) = (X + Y)(X + Z)

DeMorgan's theorem

(X + Y + Z + ...)' = X'Y'Z'... or f (

X1,X2,...,Xn,0,1,+,. ) = f (

X1',X2',...,Xn',1,0,.,+ )

(XYZ...)' = X' + Y' + Z' + ...

Simplification theorems

XY + XY' = X (uniting) (X + Y)(X + Y') = X

X + XY = X (absorption) X(X + Y) = X

(X + Y')Y = XY (adsorption) XY' + Y = X + Y

Consensus theorem

XY + X'Z + YZ = XY + X'Z (X + Y)(X' + Z)(Y + Z) = (X + Y)(X' + Z)

Duality

(X + Y + Z + ...)D = XYZ... or

f(X1,X2,...,Xn,0,1,+,.)D =

f(X1,X2,...,Xn,1,0,.,+)

(XYZ ...)D = X + Y + Z + ...

Logic Gates

A logic gate is an electronic circuit/device which makes the logical decisions. To arrive at this

decisions, the most common logic gates used are OR, AND, NOT, NAND, and NOR gates. The

NAND and NOR gates are called universal gates. The exclusive-OR gate is another logic gate

which can be constructed using AND, OR and NOT gate.

Logic gates have one or more inputs and only one output. The output is active only for certain

input combinations. Logic gates are the building blocks of any digital circuit. Logic gates are also

called switches. With the advent of integrated circuits, switches have been replaced by TTL

(Transistor Transistor Logic) circuits and CMOS circuits. Here I give example circuits on how to

construct simples gates.

Symbolic Logic

Boolean algebra derives its name from the mathematician George Boole. Symbolic Logic uses

values, variables and operations.


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Inversion

A small circle on an input or an output indicates inversion. See the NOT, NAND and NOR gates

given below for examples.

Multiple Input Gates

Given commutative and associative laws, many logic gates can be implemented with more than

two inputs, and for reasons of space in circuits, usually multiple input, complex gates are made.

You will encounter such gates in real world (maybe you could analyze an ASIC lib to find this)

Gates Types

AND

OR

NOT

BUF

NAND

NOR

XOR

XNOR

AND Gate

The AND gate performs logical multiplication, commonly known as AND function. The AND

gate has two or more inputs and single output. The output of AND gate is HIGH only when all its

inputs are HIGH (i.e. even if one input is LOW, Output will be LOW).

If X and Y are two inputs, then output F can be represented mathematically as F = X.Y, Here dot

(.) denotes the AND operation. Truth table and symbol of the AND gate is shown in the figure

below.

Symbol

Truth Table


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X Y F=(X.Y)

0 0 0

0 1 0

1 0 0

1 1 1

Two input AND gate using "diode-resistor" logic is shown in figure below, where X, Y are inputs

and F is the output.

If X = 0 and Y = 0, then both diodes D1 and D2 are forward biased and thus both diodes conduct

and pull F low.

If X = 0 and Y = 1, D2 is reverse biased, thus does not conduct. But D1 is forward biased, thus

conducts and thus pulls F low


conducts and thus pulls F low.

If X = 1 and Y = 1, then both diodes D1 and D2 are reverse biased and thus both the diodes are in

cut-off and thus there is no drop in voltage at F. Thus F is HIGH.

Switch Representation of AND Gate

In the figure below, X and Y are two switches which have been connected in series (or just

cascaded) with the load LED and source battery. When both switches are closed, current flows to

LED.


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OR Gate

The OR gate performs logical addition, commonly known as OR function. The OR gate has two

or more inputs and single output. The output of OR gate is HIGH only when any one of its inputs

are HIGH (i.e. even if one input is HIGH, Output will be HIGH)

If X and Y are two inputs, then output F can be represented mathematically as F = X+Y. Here

plus sign (+) denotes the OR operation. Truth table and symbol of the OR gate is shown in the

figure below.

Symbol

Truth Table

X Y F=(X+Y)

0 0 0

0 1 1

1 0 1

1 1 1

Truth Table

Two input OR gate using "diode-resistor" logic is shown in figure below, where X, Y are inputs

and F is the output

Circuit


cut-off and thus F is low


SJBIT/ECE Dept


conducts and thus pulling F to HIGH.



If X = 1 and Y = 1, then both diodes D1 and D2 are forward biased and thus both the diodes

conduct and thus F is HIGH.

Switch Representation of OR Gate

In the figure, X and Y are two switches which have been connected in parallel, and this is

connected in series with the load LED and source battery. When both switches are open, current

does not flow to LED, but when any switch is closed then current flows.

NOT Gate

The NOT gate performs the basic logical function called inversion or complementation. NOT gate

is also called inverter. The purpose of this gate is to convert one logic level into the opposite logic

level. It has one input and one output. When a HIGH level is applied to an inverter, a LOW level

appears on its output and vice versa.

If X is the input, then output F can be represented mathematically as F = X', Here apostrophe (')

denotes the NOT (inversion) operation. There are a couple of other ways to represent inversion,

F= !X, here ! represents inversion. Truth table and NOT gate symbol is shown in the figure below

Symbol


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Truth Table

X Y=X'

0 1

1 0

NOT gate using "transistor-resistor" logic is shown in the figure below, where X is the input and

F is the output

Circuit

When X = 1, The transistor input pin 1 is HIGH, this produces the forward bias across the emitter

base junction and so the transistor conducts. As the collector current flows, the voltage drop

across RL increases and hence F is LOW.

When X = 0, the transistor input pin 2 is LOW: this produces no bias voltage across the transistor

base emitter junction. Thus Voltage at F is HIGH.

BUF Gate

Buffer or BUF is also a gate with the exception that it does not perform any logical operation on

its input. Buffers just pass input to output. Buffers are used to increase the drive strength or

sometime just to introduce delay. We will look at this in detail later

If X is the input, then output F can be represented mathematically as F = X. Truth table and

symbol of the Buffer gate is shown in the figure below


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Symbol

Truth Table

X Y=X

0 0

1 1

NAND Gate

NAND gate is a cascade of AND gate and NOT gate, as shown in the figure below. It has two or

more inputs and only one output. The output of NAND gate is HIGH when any one of its input is

LOW (i.e. even if one input is LOW, Output will be HIGH).

NAND From AND and NOT

If X and Y are two inputs, then output F can be represented mathematically as F = (X.Y)', Here

dot (.) denotes the AND operation and (') denotes inversion. Truth table and symbol of the N

AND gate is shown in the figure below. Symbol


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Truth Table

X Y F=(X.Y)'

0 0 1

0 1 1

1 0 1

1 1 0

NOR Gate

NOR gate is a cascade of OR gate and NOT gate, as shown in the figure below. It has two or more

inputs and only one output. The output of NOR gate is HIGH when any all its inputs are LOW

(i.e. even if one input is HIGH, output will be LOW)

Symbol

If X and Y are two inputs, then output F can be represented mathematically as F = (X+Y)'; here

plus (+) denotes the OR operation and (') denotes inversion. Truth table and symbol of the NOR

gate is shown in the figure below.

Truth Table

X Y F=(X+Y)'

0 0 1

0 1 0

1 0 0

1 1 0

XOR Gate

An Exclusive-OR (XOR) gate is gate with two or three or more inputs and one output. The output

of a two-input XOR gate assumes a HIGH state if one and only one input assumes a HIGH state.

This is equivalent to saying that the output is HIGH if either input X or input Y is HIGH

exclusively, and LOW when both are 1 or 0 simultaneously

If X and Y are two inputs, then output F can be represented mathematically as F = X Y, Here

denotes the XOR operation. X Y and is equivalent to X.Y' + X'.Y. Truth table and symbol of the

XOR gate is shown in the figure below


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XOR From Simple gates

Symbol

Truth Table

X Y F=(X Y)

0 0 0

0 1 1

1 0 1

1 1 0

XNOR Gate

An Exclusive-NOR (XNOR) gate is gate with two or three or more inputs and one output. The

output of a two-input XNOR gate assumes a HIGH state if all the inputs assumes same state. This

is equivalent to saying that the output is HIGH if both input X and input Y is HIGH exclusively or

same as input X and input Y is LOW exclusively, and LOW when both are not same.

f X and Y are two inputs, then output F can be represented mathematically as F = X Y, Here

denotes the XNOR operation. X Y and is equivalent to X.Y + X'.Y'. Truth table and symbol of

the XNOR gate is shown in the figure below.

Symbol


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Truth Table

X Y F=(X Y)'

0 0 1

0 1 0

1 0 0

1 1 1

Universal Gates

Universal gates are the ones which can be used for implementing any gate like AND, OR and

NOT, or any combination of these basic gates; NAND and NOR gates are universal gates. But

there are some rules that need to be followed when implementing NAND or NOR based gate

To facilitate the conversion to NAND and NOR logic, we have two new graphic symbols for

these gates

NAND Gate

NOR Gate

Realization of logic function using NAND gates

Any logic function can be implemented using NAND gates. To achieve this, first the logic

function has to be written in Sum of Product (SOP) form. Once logic function is converted to

SOP, then is very easy to implement using NAND gate. In other words any logic circuit with

AND gates in first level and OR gates in second level can be converted into a NAND-NAND gate

circuit.

Consider the following SOP expression


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F = W.X.Y + X.Y.Z + Y.Z.

The above expression can be implemented with three AND gates in first stage and one OR gate in

second stage as shown in figure

If bubbles are introduced at AND gates output and OR gates inputs (the same for NOR gates), the

above circuit becomes as shown in figure

Now replace OR gate with input bubble with the NAND gate. Now we have circuit which is fully

implemented with just NAND gates.

Realization of logic gates using NAND gates

Implementing an inverter using NAND gate

Input Output Rule

(X.X)' = X' Idempotent


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Implementing AND using NAND gates

Input Output Rule

((XY)'(XY)')' = ((XY)')' Idempotent

= (XY) Involution

Implementing OR using NAND gates

Input Output Rule

((XX)'(YY)')' = (X'Y')' Idempotent

= X''+Y'' DeMorgan

= X+Y Involution

Implementing NOR using NAND gates

Input Output Rule

((XX)'(YY)')' =(X'Y')' Idempotent

=X''+Y'' DeMorgan

=X+Y Involution

=(X+Y)' Idempotent

Realization of logic function using NOR gates

Any logic function can be implemented using NOR gates. To achieve this, first the logic function

has to be written in Product of Sum (POS) form. Once it is converted to POS, then it's very easy

to implement using NOR gate. In other words any logic circuit with OR gates in first level and

AND gates in second level can be converted into a NOR-NOR gate circuit.

Consider the following POS expression


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F = (X+Y) . (Y+Z)

The above expression can be implemented with three OR gates in first stage and one AND gate in

second stage as shown in figure.

If bubble are introduced at the output of the OR gates and the inputs of AND gate, the above

circuit becomes as shown in figure.

Now replace AND gate with input bubble with the NOR gate. Now we have circuit which is fully

implemented with just NOR gates.

Realization of logic gates using NOR gates

Implementing an inverter using NOR gate

Input Output Rule

(X+X)' = X' Idempotent

Implementing AND using NOR gates

Input Output Rule

((X+X)'+(Y+Y)')' =(X'+Y')' Idempotent


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= X''.Y'' DeMorgan

= (X.Y) Involution

Implementing OR using NOR gates

Input Output Rule

((X+Y)'+(X+Y)')' = ((X+Y)')' Idempotent

= X+Y Involution

Implementing NAND using NOR gates

Input Output Rule

((X+Y)'+(X+Y)')' = ((X+Y)')' Idempotent

= X+Y Involution

= (X+Y)' Idempotent

Introduction

Arithmetic circuits are the ones which perform arithmetic operations like addition, subtraction,

multiplication, division, parity calculation. Most of the time, designing these circuits is the same

as designing muxers, encoders and decoders.

In the next few pages we will see few of these circuits in detail.

Adders

Adders are the basic building blocks of all arithmetic circuits; adders add two binary numbers and

give out sum and carry as output. Basically we have two types of adders


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Half Adder.

Full Adder.

Half Adder

Adding two single-bit binary values X, Y produces a sum S bit and a carry out C-out bit. This

operation is called half addition and the circuit to realize it is called a half adder

Truth Table

X Y SUM CARRY

0 0 0 0

0 1 1 0

1 0 1 0

1 1 0 1

Symbol

S (X,Y) = (1,2)

S = X'Y + XY'

S = X Y

CARRY(X,Y) = (3)

CARRY = XY

Circuit


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Full Adder

Full adder takes a three-bits input. Adding two single-bit binary values X, Y with a carry input bit

C-in produces a sum bit S and a carry out C-out bit.

Truth Table

X Y Z SUM CARRY

0 0 0 0 0

0 0 1 1 0

0 1 0 1 0

0 1 1 0 1

1 0 0 1 0

1 0 1 0 1

1 1 0 0 1

1 1 1 1 1

SUM (X,Y,Z) = (1,2,4,7)

CARRY (X,Y,Z) = (3,5,6,7)

Full Adder using AND-OR

The below implementation shows implementing the full adder with AND-OR gates, instead of

using XOR gates. The basis of the circuit below is from the above Kmap.

Circuit-SUM

Circuit-CARRY


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Full Adder using AND-OR

Circuit-SUM

Circuit-CARRY

Digital Logic Families.

Logic families can be classified broadly according to the technologies they are built with. In

earlier days we had vast number of these technologies, as you can see in the list below.

DL : Diode Logic.

RTL : Resistor Transistor Logic.

DTL : Diode Transistor Logic.

HTL : High threshold Logic.

TTL : Transistor Transistor Logic.

ECL : Emitter coupled logic.

MOS : Metal Oxide Semiconductor Logic (PMOS and NMOS).

CMOS : Complementary Metal Oxide Semiconductor Logic.


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Among these, only CMOS is most widely used by the ASIC (Chip) designers; we will still try to

understand a few of the extinct / less used technologies. More in-depth explanation of CMOS will

be covered in the VLSI section

Basic Concepts

Before we start looking at the how gates are built using various technologies, we need to

understand a few basic concepts. These concepts will go long way i.e. if you become a ASIC

designer or Board designer, you may need to know these concepts very well.

Fan-in.

Fan-out.

Noise Margin.

Power Dissipation.

Gate Delay.

Wire Delay.

Skew.

Voltage Threshold

Fan-in

Fan-in is the number of inputs a gate has, like a two input AND gate has fan-in of two, a three

input NAND gate as a fan-in of three. So a NOT gate always has a fan-in of one. The figure

below shows the effect of fan-in on the delay offered by a gate for a CMOS based gate. Normally

delay increases following a quadratic function of fan-in.

Fan-out

The number of gates that each gate can drive, while providing voltage levels in the guaranteed

range, is called the standard load or fan-out. The fan-out really depends on the amount of electric

current a gate can source or sink while driving other gates. The effects of loading a logic gate

output with more than its rated fan-out has the following effects

In the LOW state the output voltage VOL may increase above VOLmax.

In the HIGH state the output voltage VOH may decrease below VOHmin.

The operating temperature of the device may increase thereby reducing the reliability of

the device and eventually causing the device failure.

Output rise and fall times may increase beyond specifications

The propagation delay may rise above the specified value.


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Normally as in the case of fan-in, the delay offered by a gate increases with the increase in fan-

out.

Two input OR gate using "diode-resistor" logic is shown in figure below, where X, Y are inputs

and F is the output

Circuit


cut-off and thus F is low





If X = 1 and Y = 1, then both diodes D1 and D2 are forward biased and thus both the diodes

conduct and thus F is HIGH

Points to Ponder

Diode Logic suffers from voltage degradation from one stage to the next.

Diode Logic only permits OR and AND functions.

Diode Logic is used extensively but not in integrated circuits.

Resistor Transistor Logic


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In RTL (resistor transistor logic), all the logic are implemented using resistors and transistors.

One basic thing about the transistor (NPN), is that HIGH at input causes output to be LOW (i.e.

like a inverter). Below is the example of a few RTL logic circuits.

A basic circuit of an RTL NOR gate consists of two transistors Q1 and Q2, connected as shown in

the figure above. When either input X or Y is driven HIGH, the corresponding transistor goes to

saturation and output Z is pulled to LOW.

Diode Transistor Logic

In DTL (Diode transistor logic), all the logic is implemented using diodes and transistors. A basic

circuit in the DTL logic family is as shown in the figure below. Each input is associated with one

diode. The diodes and the 4.7K resistor form an AND gate. If input X, Y or Z is low, the

corresponding diode conducts current, through the 4.7K resistor flows through the the

corresponding diode to ground. Thus there is no current through the diodes connected in series to

transistor base . Hence the transistor does not conduct, thus remains in cut-off, and output is

High.

If all the inputs X, Y, Z are driven high, the diodes in series conduct, driving the transistor into

saturation. Thus output out is Low.

Transistor Transistor Logic


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In Transistor Transistor logic or just TTL, logic gates are built only around transistors. TTL was

developed in 1965. Through the years basic TTL has been improved to meet performance

requirements. There are many versions or families of TTL.

Standard TTL.

High Speed TTL

Low Power TTL.

Schhottky TTL.

Here we will discuss only basic TTL as of now; maybe in the future I will add more details about

other TTL versions. As such all TTL families have three configurations for outputs

Totem - Pole output.

Open Collector Output.

Tristate Output.

Before we discuss the output stage let's look at the input stage, which is used with almost all

versions of TTL. This consists of an input transistor and a phase splitter transistor. Input stage

consists of a multi emitter transistor as shown in the figure below. When any input is driven low,

the emitter base junction is forward biased and input transistor conducts. This in turn drives the

phase splitter transistor into cut-off.

Totem - Pole Output

Below is the circuit of a totem-pole NAND gate, which has got three stages

Input Stage

Phase Splitter Stage

Output Stage

Input stage and Phase splitter stage have already been discussed. Output stage is called Totem-

Pole because transistor Q3 sits upon Q4.


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Q2 provides complementary voltages for the output transistors Q3 and Q4, which stack one above

the other in such a way that while one of these conducts, the other is in cut-off

Q4 is called pull-down transistor, as it pulls the output voltage down, when it saturates and the

other is in cut-off (i.e. Q3 is in cut-off). Q3 is called pull-up transistor, as it pulls the output

voltage up, when it saturates and the other is in cut-off (i.e. Q4 is in cut-off).

Diodes in input are protection diodes which conduct when there is large negative voltage at input,

shorting it to the ground

Tristate Output.

Normally when we have to implement shared bus systems inside an ASIC or externally to the

chip, we have two options: either to use a MUX/DEMUX based system or to use a tri-state base

bus system.In the latter, when logic is not driving its output, it does not drive LOW neither HIGH,

which means that logic output is floating.The problem is that open collectors are not so good for

implementing wire-ANDs.The circuit below is a tri-state NAND gate; when Enable En is HIGH,

it works like any other NAND gate. But when Enable En is driven LOW, Q1 Conducts, and the

diode connecting Q1 emitter and Q2 collector, conducts driving Q3 into cut-off. Since Q2 is not

conducting, Q4 is also at cut-off. When both pull-up and pull-down transistors are not conducting,

output Z is in high-impedance state.


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Ece i Basic Electronics [10eln 15] Notes

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