Development of reliable, efficient, medium voltage (2.5kV-15kV) SiC … PSMA... · 2016. 1. 15. ·...
Transcript of Development of reliable, efficient, medium voltage (2.5kV-15kV) SiC … PSMA... · 2016. 1. 15. ·...
Development of reliable, efficient, medium voltage(2.5kV-15kV) SiC power MOSFETs for new applications
Cree Power – Sept 2014 PSMA WebinarCree Power – Sept 2014 PSMA Webinar
Jeff Casady, +001.919.308.2280 or [email protected]
Copyright © 2014, Cree Inc.1
• SiC MOSFETs at Cree – a brief introduction
– Existing portfolio
– Reliability
– Existing portfolio applications
• Future SiC MOSFET products – scaling to medium
Outline
2
voltage
– SiC MOSFET ratings compared to Si IGBT ratings
– Engineering sample status medium voltage SiC MOSFETs
– Example application using medium voltage SiC MOSFETs
Cree SiC Diode Portfolio Beginning in 2002
Package Styles:• TO-220• TO-247• Full-PAK• DPAK (TO-252)• D2PAK (TO-263)• QFN (surface mount)
>70 products and growing
• 50 Amp Chip Set Released 2013
– CPW5-0650-Z0 50B: 650V, 50A Schottky Diode
– CPW5-1200-Z050B: 1200V, 50A Schottky Diode
– CPW5-1700-Z050B: 1700V, 50A Schottky Diode
• QFN (surface mount)• Isolated TO-220
Bare Die for Modules:2A – 50 A; 650-1700V
pg. 3Copyright © 2014 Cree, Inc.
1200V MOSFETs (Bare Die)
− CPM2-1200-0025 (25mΩ; 60A)
− CPM2-1200-0040 (40mΩ; 40A)
− CPM2-1200-0080 (80mΩ; 20A)
− CPM2-1200-0160 (160mΩ; 10A)
1200V MOSFETs (TO-247)
Cree SiC MOSFET Portfolio Beginning in 2011 4>13 products and growing
1200V MOSFETs (TO-247)
− C2M0025120D (25mΩ; 60A)
− C2M0040120D (40mΩ; 40A)
− C2M0080120D (80mΩ; 20A)
− C2M0160120D (160mΩ;10A)
− C2M0280120D (280mΩ; 7A)
1700V MOSFETs
− C2M1000170D (1Ω, 3.0A) TO-247
− CPM2-1700-0040 (40mΩ; 50A) Bare Die – now sampling
pg. 4
50 mm Platform Half-Bridge Configuration− CAS100H12AM1 (1200V, 100A)
− XAS125H12AM2 (1200V, 125A)
− XAS125H17AM2 (1700V, 125A)
45 mm Platform 6-Pack Configuration
Cree All-SiC Power Module Portfolio Beginning in 2012 5> 7 products and growing
45 mm Platform 6-Pack Configuration− CCS050M12CM2 (1200V, 50A 6-pk)
− CCS020M12CM2 (1200V, 20A 6-pk)
62 mm Platform Half-Bridge Configuration− CAS300M12BM2 (1200V, 300A)
− CAS300M17BM2 (1700V, 250A)
pg. 5
Cree 1700V, 8mΩ, ½ bridge power module released6
Full commercial release –September 2014
Gate drivers, app notesavailable
First all-SiC power modulereleased commercially @1700V1700V
Available globally – Digikey, Mouser,Richardson/Arrow (right), …
2 channel; 1.2/1.7 kV 62 mm modulegate driver direct mount
pg. 6
SiC MOSFET Reliability Data
Section
SiC MOSFET Reliability Data
7Copyright © 2012, Cree Inc.
Proven Reliability with Industry-Leading Standardspg. 8
Cree Field Failure Rate Data since Jan. 2004through Mar. 2014
• 0.12 FIT rate is 10 times lower than the typical silicon
• SiC diodes first released in 2001
• SiC MOSFETs first released in 2011Copyright © 2014, Cree, Inc.
Reliability Meets All Commercial and Military Requirements
Tim
e(H
ou
rs)
Tim
e(H
ou
rs)
Accelerated HTRB Testing at 150°C Accelerated TDDB Testing at 150°C
Tested to failureat very high
Drain voltages
Tested tofailure at
very high G-S voltages
• MOSFETs have extrapolated MTTF of 30 million hours
• Gate oxides have extrapolated MTTF of 8 million hours at +20V continuous
9Copyright © 2014, Cree, Inc.
C2M VTH Stability at High Temperature, +/- DC Biaspg. 10
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VT
H(V
)
In-Situ Monitored Data
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VT
H(V
)
In-Situ Monitored Data
VGS = -15VT = 150°C
Positive Bias Accelerated at 175°C Negative Bias Accelerated at -15V
VGS = +20VT = 175°C
• Extremely stable for 1,000 hours under positive and negative bias
– Accelerated beyond data sheet to see any measurable change
– Average shift under positive bias: DVTH = 0.06 V, DRDS-ON = 0.1 mΩ
– Average shift under negative bias: DVTH = 0.01 V, DRDS-ON = 3.2 mΩ
Copyright © 2014, Cree, Inc.
0.0
0.5
0 200 400 600 800 1000Time (hr)
0.0
0.5
0 200 400 600 800 1000Time (hr)
T = 175°C
60%
80%
100%
%o
fIn
tro
du
cti
on
Co
st
Cost reduction from volume and device refinement
Gen 2Schottky
Gen 1MOSFET
Gen 1Schottky
600V Schottky1200V Schottky MOSFET
0%
20%
40%
2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2015 2016
%o
fIn
tro
du
cti
on
Co
st
150 mm100mm
75mm
Gen 5Schottky
Gen 3Schottky
Gen 4Schottky
Wafer Diameter Increases
Solid Lines = ActualDotted Lines = Projections
Gen 2MOSFET
Copyright © 2014, Cree, Inc.
Existing MOSFET Portfolio
Section – Partial Listing of
Existing MOSFET PortfolioApplications
Copyright © 2012, Cree Inc.pg. 12
Benefits of SiC in power electronics arecompelling in 10 to 50 kW boost stage
BOM cost decreases
Size, weight & losses all decrease
C2M0080120D compared to H3 IGBT*
1200V SiC MOSFET impact to 10-50 kW boost
Size Weight BOM Losses Temperature
10 kW 50% ↓ 40% ↓ 10-20% ↓ 20% ↓ 30% ↓
50 kW 50% ↓ 60% ↓ 10-18% ↓ 40% ↓ 40% ↓
* Reference: J. Liu (PCIM 2013)
C2M0080120D compared to H3 IGBT*
pg. 13
1200V SiC MOSFET design wins in PV inverters
1200V, 80mΩ SiC MOSFETs have been selected by Japan’s Sanix Inc.
PV Inverters- lower losses, costs
“Through this partnership with Cree and their SiC technology, Sanix is able to capture more marketshare in the competitive Japan solar market,” says Sanix’s general manager Hiroshi Soga. “Cree’s... SiC switches reduced losses in our inverter electronics by more than 30% versus the siliconsuper-junction MOSFETs we were considering…”
9.9kW three-phase solar inverters
Higher power density, lower losses
- better performance
Sept 2014 press releaseApril 2013 press release
pg. 14
1200V MOSFET design wins-induction heating
“The drop-in feature of Cree’s new all-SiC power module allows us to achieve 99percent efficiency while reducing the power module count by a factor of 2.5 in ourexisting HF induction heating systems,” said John K. Langelid, R&D manager, EFDInduction. “These benefits are greatly valued as a reduced cost of ownership by our endcustomers.”
Induction Heating power supplies- 2.5X lower part count
- better implied reliability- Reduction in power losses- Reduced COO
May 2014 press release
pg. 15
1200 V SiC MOSFETs used in on-board DC/DC converter
For HEV/EV bus (Shinry)
Silicon SiC
pg. 16Copyright © 2014, Cree, Inc.
• DC-DC topology with 1200 V SiC MOSFET (C2M0080120D)
• Active clamp forward topology with 750 V DC in / 27 V DC out
• SiC MOSFET enabled:
• ↑ efficiency from 88% to 96%
• ↓ size and weight by 25% - 60%
• ↓ both cost and audible noise
• Eliminated cooling fans
Compact demo 8 kW EV using 1200 V SiC MOSFET
InputResonant TankLm Cr
SiC MOSwith heatsink
SiC SBD
• 8 kW
• 98.1% eff
• 260kHz
Ref: J. Liu, PCIM 2014
Board Size of 8 kW Full Bridge LLCResonant Converter using SiC(Size: 8”x12.5”x3.5” ) – > 35 W / in3
Output
Lr
Controller Gate Driver
• 260kHz
pg. 17
1200 V SiC MOSFETs used in 8 kW EV charger demo
1200 V SiC MOSFET (C2M0160120D) enables:
• Simpler topology, ½ the components, 260 kHz, (> 35W/in3)
• Lower system cost, > 98.1% efficient
• Not possible to do this in silicon
Items 3-level FB w/ Si MOS@ 120kHZ resonant freq.
2-level FB w/ SiC MOS@ 260kHZ resonant freq.
CREE SiC MOSFET in Full Bridge LLC ZVSResonant Converter – J. Liu, PCIM 2014
@ 120kHZ resonant freq. @ 260kHZ resonant freq.
MOSFETs→ 650 V Si SPW47N60CFD in 3 level→ 1200 V SiC C2M0160120D in 2 level
16 pcs 8 pcs
Flying diode 4 pcs None
Resonant Inductor(PQ3535)
2 pcs 1 pc Lr=15uH
Magnetize transformer 2 pcs PQ5050 1 pcs PQ6560 Lm=100 uH
Resonant Capacitors 35nF 25 nFMOS Drivers 8 pcs 4 pcs
Peak efficiency 97.8% 98.1%
pg. 18
Future SiC MOSFET products –
Section –
Future SiC MOSFET products –scaling to medium voltage
19Copyright © 2012, Cree Inc.
SiC amp ratings are much less than Si
300 Amp SiC More Capable than 600 Amp Si IGBTs!
150
200
250
300
350
Loss
es(W
atts
)
Diode
Switching
Si Amps are not SiC Amps
• System cost reduction of 20% using 1200V SiC
– Increased frequency reduces size and weight of magnetics
– Lower losses reduce system cooling requirements
– Amperage rating for SiC less than half required for Si IGBTs
0
50
100
SiC MOSFET 300 Amp,10 kHz
Si IGBT 600 Amp,3 kHz
Conduction
Copyright © 2014, Cree, Inc.20
SiC voltage ratings are much less than Si?
Semiconductor PowerDevices: Physics,Characteristics,ReliabilityBy Josef Lutz, HeinrichSchlangenotto, Uwe
Si Volts are not SiC Volts6.5 kV Si IGBT usedfor 3.6 kV drives (100cosmic ray FIT rate)
4.5 kV SiC MOSFETused for 3.6 kV line?
10 kV SiC MOSFET
• Medium Voltage SiC MOSFET roadmap must respond to application
– 10X higher switching frequency, lower thermal dissipation possible
– Cosmic ray, other reliability metrics may be 100X better
– All requirements, eg. short circuit, surge must be understood
Copyright © 2014, Cree, Inc.21
Schlangenotto, UweScheuermann, Rik DeDoncker
10 kV SiC MOSFETused for 7.2 kV?
Next Generation SiC MOSFETs
P-Well
N+ N+
Source
Source Contact Metal
Degenerately doped Poly Si Gate
Inter-metal Dielectric
Gate Oxide
P-Well
N+ N+
Source
Source Contact Metal
Degenerately doped Poly Si Gate
Inter-metal Dielectric
Gate Oxide
Optimized doping
Smaller pitch
Gen 2 DMOS R&D DMOS
Same high reliability DMOS Structure, butoptimized to dramatically reduce die size
N+ 4H SiC Substrate
Drain Contact Metal
N+ 4H SiC Substrate
Drain Contact Metal
Commercially released in 2013
Reference: J. Palmour, et al (ISPSD 2014)Copyright © 2014, Cree, Inc.
pg. 22
8
10
12
cm
2)6
8
10
12
ON
,SP
(mWc
m2)
GenGen--11IntroductionIntroduction
100%61%
42%
GenGen--22RevolutionRevolution
R&DR&D
0
2
4
6
8
Gen-1Planar DMOS
(Product, 2011)
Gen-2Planar DMOS
(Product, 2013)
Gen-3Planar DMOS(R&D, 2014)
8.0
4.8
2.7
11.0
8.9
4.9
RO
N,S
P(m
Wc
m
0
2
4
0 25 50 75 100 125 150
RO
N,S
P
TJ (°C)
1200 V, 80 mW, SiC DMOSFETs
at VG = 20 V, ID = 20 AReference: J. Palmour, et al (ISPSD 2014)
Copyright © 2014, Cree, Inc.pg. 23
100Wc
m2)atV
G=
20
V 10 kV
15 kV
6.5 kV
R&D MOSFETs Set New Standard for Lowon-Resistance in SiC
1
10
100 1,000 10,000
RO
N,S
P(m
W
Breakdown Voltage (V)
3.3 kV
900 V
Gen 2, C2MFamily 1.2 kV
Gen 1, 1.2 kV
1.2 kV
Copyright © 2014, Cree, Inc.
Reference: V. Pala, et al (ECCE 2014)
pg. 24
3.3 kV, 40 mΩ, “40 A” MOSFET Engineering Samplespg. 25
Copyright © 2014, Cree, Inc.pg. 25
3.3 kV SiC MOSFET DC Characteristics
15
20
25
30
I D(A
)
ID(0V)
ID(4V)
RON,SP = 10.6 mWcm2 at VG = 20 V
6
8
10
A)
at
VG
=0
V
9.16 mm
5.1
mm
4161 V @ 10.2 Aat VG = 0 V
0
5
10
0 1 2 3
VD (V)
ID(4V)
ID(8V)
ID(12V)
ID(16V)
ID(20V)
Blocks 4.16 kV with Rds(on) of 10.6 mWcm2 !
0
2
4
0 1000 2000 3000 4000
I D(
A)
at
VBVDS (V)
5.1
mm
Reference: J. Palmour, et al (ISPSD 2014)Copyright © 2014, Cree, Inc.
pg. 26
3.3 kV/40 A SiC DMOSFET Switching
0
50
100
150
200
Dra
in-S
ou
rce
Cu
rre
nt(A
)
TJ = 25 C
TJ = 100 C
TJ = 150 C
VDS = 20 V
Switching at 1800V, 25A
0
0 5 10 15 20
Gate-Source Voltage, VGS (V)
0
0.5
1
1.5
2
2.5
3
25 50 75 100 125 150
On
Re
sist
ance
,RD
SO
N(p
.u.)
Junction Temperature, TJ (C)
IDS = 28 A
VGS = 20 Vtp < 50 μs
Reference: J. Palmour, et al (ISPSD 2014)Copyright © 2014, Cree, Inc.
pg. 27
40
50
60
70
80
D(
A)
~ 6.8 kV @ 67 A
at VG = 0 V
6.5kV, 25A SiC MOSFET
RON,SP=50 mWcm2 at VG=20 V, RT
40
50
60
70
80
I D(A
)
ID(0V)
ID(5V)
ID(10V)
ID(15V)
ID(20V)
7.20 mm
Adie=0.54 cm2, Aact=0.3 cm2
0
10
20
30
0 1 2 3 4 5 6 7
I DBVDS (kV)
Blocks ~ 6.8 kV with Rds(on) of 50 mWcm2 !
0
10
20
30
0 2 4 6 8 10 12 14
I
VD (V)
7.2
0m
mReference: J. Palmour, et al (ISPSD 2014)
Copyright © 2014, Cree, Inc.pg. 28
10 kV, 300 mΩ, “20 A” MOSFET Engineering Samplespg. 29
Copyright © 2014, Cree, Inc.pg. 29
15
20
25
30
I D(A
)
ID(0V)
ID(4V)
ID(8V)
ID(12V)
ID(16V)
ID(20V)
RON,SP=86 mWcm2 at VG=20 V, RT
30
40
50
60
70
80
I D(
A)
11.06 kV @ 75 A
at VG = 0 V
Adie=0.54 cm2, Aact=0.28 cm2
10kV, 20A improved SiC MOSFET
0
5
10
0 2 4 6 8 10
VD (V)
0
10
20
30
0 2 4 6 8 10 12
BVDS (kV)
Blocks ~ 11 kV with Rds(on) of 86 mWcm2 !Reference: J. Palmour, et al (ISPSD 2014)
Copyright © 2014, Cree, Inc.pg. 30
10 kV Improved SiC MOSFET Switching Performance
Turn-Off
Turn-On
Deliver > 50% amps with 40% smaller Adie
than Gen-1, 10kV DMOS at 250 W/cm2
> 40x lower Esw than the 6.5kV Si-IGBTReference: J. Palmour, et al (ISPSD 2014)
Copyright © 2014, Cree, Inc.pg. 31
15 kV/10 A SiC DMOSFET Development
20
0
2
4
6
8
10
12
14
0 2 4 6 8
Dra
inC
urr
en
t(A
)
Drain Voltage (V)
10 V
5 V
0 V
15, 20 V
RON,SP=208 mWcm2
VG=20V, RT
Design optimization allows BV of 15kV
with the same Adie than Gen-1, 10kV
DMOSFETs
Reference: J. Palmour, et al (ISPSD 2014)
0
2
4
6
8
10
12
14
16
18
20
4 5 6 7 8 9 10 11 12 13 14 15
Sw
itch
ing
Lo
ss(m
J)
Bus Voltage (kV)
EON, 10A
EON, 5A
EOFF, 5AEOFF,10A
15 kV SiC DMOSFETDrain Voltage (V)
0.0E+00
2.0E-08
4.0E-08
6.0E-08
8.0E-08
1.0E-07
1.2E-07
1.4E-07
1.6E-07
1.8E-07
2.0E-07
0 2000 4000 6000 8000 10000 12000 14000 16000
Dra
inC
urr
en
t(A
)
Drain Voltage (V)
Adie: 0.63 cm2, AAct: 0.32 cm2
15.5 kV @ < 0.2 A
Copyright © 2014, Cree, Inc.pg. 32
Eliminate Switching Losses with SiC MOSFETs
• 25x smaller switching losses compared to 6.5 kV IGBTs
Device Max TJ
BusVoltage
RatedCurrent
VDSON @Max TJ
ESW,ON ESW,OFF ESW,TOT
6.5 kV125 C 3.6 kV 25 A 5.4 V 200 mJ 130 mJ 330 mJ
33Copyright © 2014, Cree, Inc.
6.5 kV
Si IGBT125 C 3.6 kV 25 A 5.4 V 200 mJ 130 mJ 330 mJ
10 kV
SiC MOSFET150 C 7 kV 20 A 10.2 V 8.4 mJ 1.3 mJ 9.7 mJ
15 kV SiC MOSFET 150 C 10 kV 10 A 16.3 V 10.2 mJ 3 mJ 13.2 mJ
Reference: V. Pala, et al (ECCE 2014)
SiC MOSFETs : >2x Voltage, 10x Frequency Compared to Silicon
80
100
120
140
Ma
xim
um
Sy
stem
Po
wer
(kW
)
Power Capability vs Frequency for Hard Switched Topologies
• Power is bus voltagetimes current
• Maximum currentlimited by thermal chiplimit
• 6.5kV and 4.5kV SiCMOSFETs will providefurther advantage over
34Copyright © 2014, Cree, Inc.
0
20
40
60
1 10 100
Ma
xim
um
Sy
stem
Po
wer
(kW
)
Switching Frequency (kHz)
10x
Reference: V. Pala, et al (ECCE 2014)Copyright © 2014, Cree, Inc.
further advantage overSi IGBT
• Analysis assumedhard switched ½bridge invertertopology
Future Target Applications
Section –
Future Target Applications
35Copyright © 2014, Cree, Inc.
• AC Medium Voltage Drives Applications
• Railway Applications (3.3 kV SiC already being adopted in rail)
• Grid-tied Solar Applications
• HVDC Applications (Off-shore wind, hydro, …)
• Grid-tied Power Distribution (Energy-intensive structures such as factories, data centers)
Application Market Pull for MV SiC from:
Transport Electrification Energy Distribution Rail & Grid-tied Energy
pg. 36Copyright © 2014, Cree, Inc.
10 kV SiC MOSFETs in Boost Converter (Fraunhofer ISE)
Copyright © 2014, Cree Inc.
A Highly Efficient DC-DC-Converter for Medium-Voltage ApplicationsJürgen Thoma, David Chilachava, Dirk Kranzer
ENERGYCON 2014 • May 13-16, 2014 • Dubrovnik, Croatia
Advantages of medium voltage DC distribution:• Flexible subunit power rating from a few kW to > 2 MW• Smaller, lighter, cheaper power cables with higher voltage• Eliminate large, heavy, costly transformer• Reduce number of system components
pg. 37
10 kV SiC MOSFETs in Boost Converter (Fraunhofer ISE)
• Fraunhofer DC-DC converter used 10kVSiC MOSFETs from Cree
• 30 kW DC voltage converter with 3.5 kVinput voltage, 8.5 kV output voltage,
Efficient, “transformer-less” power distribution tomedium voltage grid
Copyright © 2014, Cree Inc.
input voltage, 8.5 kV output voltage,98.5% efficient
• 8kHz switching frequency 15X higherthan possible with conventional silicondevices in the same voltage range.
Box is 36 cm x 30 cmA Highly Efficient DC-DC-Converter for Medium-Voltage Applications
Jürgen Thoma, David Chilachava, Dirk KranzerENERGYCON 2014 • May 13-16, 2014 • Dubrovnik, Croatia
pg. 38
Copyright © 2014, Cree, Inc.