Development of Low-Cost 2G HTS Coated Conductors at...

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EPRI 11 th Conference on Superconductivity Tuesday, October 29, 2013 Development of Low-Cost 2G HTS Coated Conductors at STI Jeong-Uk Huh, Jian Cao, Joseph Chase, Xiaofeng Qiu, Ken Pfeiffer

Transcript of Development of Low-Cost 2G HTS Coated Conductors at...

Page 1: Development of Low-Cost 2G HTS Coated Conductors at STImydocs.epri.com/docs/PublicMeetingMaterials/MRNYPKPLTGV/01-PFEIFFER... · EPRI 11th Conference on Superconductivity Tuesday,

EPRI 11th Conference on Superconductivity

Tuesday, October 29, 2013

Development of Low-Cost 2G HTS Coated Conductors at STI

Jeong-Uk Huh, Jian Cao, Joseph Chase, Xiaofeng Qiu, Ken Pfeiffer

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Low-Cost HTS Coated Conductor Requirements

INPUTS

Low cost of raw materials

o Elemental source materials

o Inexpensive substrate material

PROCESS

Low number of template buffer layers

o Simple and repeatable

Low number of process steps per layer

o High yield in each process

High throughput and large HTS growth area

EQUIPMENT

Low production equipment cap-ex

Simplified structure inherently reduces cost and also increases yield

2 © 2013 Superconductor Technologies Inc. Proprietary and All Rights Reserved

3

2

1

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STI’s Three Step Approach

SDP – Solution deposition planarization o Atmospheric wet coating which provides an amorphous ceramic overlayer

o Low-cost solution-based process

o Metal Oxide acts as planarization layer & diffusion barrier

o No need to polish metal substrate tape

o Compatible with many alloys

IBAD + Epi MgO – Ion beam assisted deposition

o The thinnest, fastest template formation

o Requires only 50 nm MgO layers for crystallinity

o High throughput process

o In-situ 2 chamber deposition system (IBAD + EPI)

RCE-CDR – Reactive coevaporation / cyclic deposition and reaction

o STI has developed the RCE-CDR technique for >15 years in wireless filters and

shown it to be low-cost & high-yield technique for HTS deposition

o Enables growth directly on MgO layer –or- with optional buffer(s)

o In-situ process in a single deposition system (YBCO + Top Contact Cap Layer)

o Elemental raw materials = low costs

o Large-area deposition with a fast-batch architecture

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Solution Deposition Planarization

SDP Production System Operational

o High speed roll-to-roll process

o Up to 1000m length 10cm width capacity

o Manufacturing capacity >1000km/yr

Solution Deposition Chemistry Optimization

o Yttria (Y2O3) SDP process transferred from R&D stage to production scale

o Improvements made in film quality by chemistry improvements (solvents, surfactants, etc..)

o Eliminate cracking at higher temperatures

o Minimize edge bead formation

10X 1cm with slitting

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Ion Beam Assisted Deposition

IBAD + EPI MgO Production System - Meeting specifications

o Capable of handling up to 1000m lengths – Capacity 1000km/yr

o Consistently getting Jc > 2.5 MA/cm2 - Out of plane orientation: 2.1˚

o Performed DOE with hundreds of conditions to optimize IBAD & EPI

o Jc 3.8 MA/cm2 reached as a result of DOE

Omega (degree)

Inte

nsi

ty (a

.u.)

(200)

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RHEED Pattern

XRD Pattern

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Reactive Coevaporation 100M System

RCE 100M System installed Q2 2013 and operational meeting customer specification

o Batch system capable of depositing ReBCO, optional buffer layer, and silver cap layer

o Cyclic deposition and reaction on rotating drum

o Uses evaporation sources for Rare earth, Barium, Copper, and silver

o Ability to optimize process for different superconducting applications: High Ic, High in-field

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RCE 100M Results

Successfully transferred RCE process from wafer machine to 100 meter RCE system

o Significant progress made in last 5 months & lessons learned;

o Thermal stability of heaters

o Reliability & stability of evaporation sources

o Differential pumping between the heater and source chamber improved

o Increased the deposition rate (4X) without degrading HTS performance – higher throughput

o Direct current measurements; Ic > 450A/cm on multi-meter length tapes

o Compositional uniformity is within 0.5% from along entire 100m length.

o Uniform Large Area deposition window enables fast-batch & uniform Ic

o Currently improving scale-up reliability, run-to-run composition control, and differential

pressure control

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RCE 100M System Results

8 © 2013 Superconductor Technologies Inc. Proprietary and All Rights Reserved

I c (

A/c

m)

Successfully transferred RCE process from wafer

machine to 100m system

o No significant dropouts for 30m long tape

o Avg Ic 350A

o Moving quickly to meet 500A/cm performance

and lengths of 100m lengths / 4mm

on TapestarTM

3.0 m sample: Avg Ic 450 Amps

30m Sample : Avg Ic 350A

400

300

500 400

I c (

A/c

m)

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STI 2014 Plans

SDP and IBAD are production ready for 1km lengths

o Focused on ramping volume as production RCE 1000M comes on line

RCE 1000M System is being built

o Capital to build new system was secured in August 2013 – $2.5M in CAPEX

o System Operational Q2-2014

o RCE1000 System scale up from existing pilot 100M system with same process: Low risk

o Conductus production specifications: 1000m lengths (no splicing) of 500A-cm tape

o Projected annual capacity of 750 km of 2G HTS wire

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RCE 1000M System

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RCE 1000M Systems in Austin, TX Facility

Our 1st 1km capable system

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Summary

o STI’s Coated Conductor is inexpensive, high-yield, and scalable

o Our approach and HTS manufacturing experience can meet the demand for coated conductors and beat the industry cost targets

o Achieved results on a simplified template process requiring SDP and IBAD layers

o Successfully shipping Conductus wire to customers utilizing 100m RCE system

o Now = 250A to 400A/cm

o Piece lengths continue to increase from 10’s of meters (today) to 100’s meters

o Tape shows compositional & Ic uniformity

o Conductus wire production in 2014 – Project funded to capacity of 750,000m/yr

o SDP and IBAD production systems – Complete

o 1000M RCE System is being built Q2 - 2014

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Thank You

Ken Pfeiffer Vice President – Engineering Superconductor Technologies Inc. [E]: [email protected]

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In-field performance

Minimum Jc is independent of thickness for thicker films

0.7 to 4.4 µm films

B=0.9 Tesla, 77 K

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In-field performance

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Field Minimum Ic (A/cm-width)

65 K 75 K

1 T -- 178

3 T 257 66

5 T 153 24

75 K 65 K